CN109742738A - A kind of silicon carbide device short-circuit protection circuit and method - Google Patents
A kind of silicon carbide device short-circuit protection circuit and method Download PDFInfo
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- CN109742738A CN109742738A CN201910055346.4A CN201910055346A CN109742738A CN 109742738 A CN109742738 A CN 109742738A CN 201910055346 A CN201910055346 A CN 201910055346A CN 109742738 A CN109742738 A CN 109742738A
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Abstract
The invention discloses a kind of silicon carbide device short-circuit protection circuit and methods.The described method includes: the first real time gate voltage when detection silicon carbide device running；If the first real time gate voltage is greater than the first voltage threshold value, Fisrt fault signal is exported；Detect the second real time gate voltage when silicon carbide device running；If the second real time gate voltage is greater than the second voltage threshold value, the second fault-signal is exported；If being consecutively detected the Fisrt fault signal and second fault-signal, determine that short circuit occurs for the silicon carbide device.The circuit includes driving signal control unit, the first controller, comparator, Logical processing unit, second signal isolated location and voltage threshold control unit.Fast response time, it is versatile, reduce cost.
Description
Technical field
The present invention relates to technical field of semiconductor device, in particular to a kind of silicon carbide device short-circuit protection circuit and side
Method.
Background technique
As semiconductor process technique is continuously improved, Si (silicon) device performance has tended to the theoretical pole of its material itself
Limit, so that saturation trend occurs in the growth of power density, development speed has been unable to satisfy the high performance requirements in market.With
It is prepared with the semiconductor material with wide forbidden band that SiC (silicon carbide) is representative, the rapid development of manufacturing process and device physics, SiC electricity
Power electronic device is increasingly becoming the important development object of power semiconductor.
Since the conveyance capacity of SiC is poor, following technological difficulties be exactly SiC device short-circuit protection method, both
To guarantee SiC device reliable turn-off within the promising time, prevent from being interfered again and report failure by mistake, existing market mainly use with
Lower two schemes:
It is detected by string resistance or string diode；String resistance detection mode is mainly used for the short-circuit protection of Si device,
Also there is certain application in the field SiC, but since the short-circuit protection time that SiC is required is shorter, the RC of demand is taken in detection circuit
Be worth it is lower, complete machine operation when be easy to be interfered cause report by mistake failure, influence the reliability service of system；
It is detected by image current；Part SiC device in the market draws image current test side in the module, for pair
Device carries out over-current detection protection, prevents overcurrent damage device, but since test side is additionally added, and device technology is required to increase
Add, and be different from traditional encapsulation, need to match different detection circuits in driving design again, complexity increases, and leads to
It is poor with property.
Summary of the invention
The purpose of the invention is to make up above-mentioned at least one deficiency in the prior art, a kind of silicon carbide device is proposed
Short-circuit protection circuit and method.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of silicon carbide device short-circuit protection method, comprising:
S1, input drive signal to silicon carbide device grid to control being switched on or off for the silicon carbide device；
S2, the silicon carbide device grid voltage since opening threshold value to opening the first rank for Miller platform occur
Section detects the first real time gate voltage when silicon carbide device running；
The of S3, the grid voltage for being normally switched on or off the first real time gate voltage and the silicon carbide device
One voltage threshold is compared, if the first real time gate voltage is greater than the first voltage threshold value, exports Fisrt fault
Signal；
S4, the silicon carbide device grid voltage Miller platform second stage from start to end, detect institute
State the second real time gate voltage when silicon carbide device running；
S5, the second real time gate voltage is compared with second voltage threshold value, if second real time gate is electric
Pressure is greater than the second voltage threshold value, then exports the second fault-signal；The second voltage threshold value is greater than the first voltage threshold
Value；
If S6, being consecutively detected the Fisrt fault signal and second fault-signal, the silicon carbide device is determined
Short circuit occurs for part, stops to the grid input drive signal of the silicon carbide device.
In some preferred embodiments, to the response time of short circuit within 500ns.
A kind of silicon carbide device short-circuit protection circuit, including driving signal control unit, the first controller, comparator, patrol
Collect processing unit, second signal isolated location and voltage threshold control unit；
One end of the driving signal control unit is for inputting pwm signal, the grid company of the other end and silicon carbide device
It connects, to control being switched on or off for the silicon carbide device；
Second pin of first controller is connect with the driving signal control unit, to detect the silicon carbide device
The gate voltage signal of part, the third pin of first controller are connect with the first input pin of the comparator；
The voltage threshold control unit is connect with the second input pin of the comparator, by first voltage threshold value or
Second voltage threshold value is input to the comparator；
One end of the first passage of the Logical processing unit and one end of second channel are used to input pwm signal, institute
The other end of the other end and the second channel of stating first passage respectively with the first phase of the second signal isolated location
Input terminal and the connection of the input terminal of the second phase；
The output end of first phase is connect with the first pin of first controller, to control first controller
Open and turn off；The output end of second phase is connect with the voltage threshold control unit, to control the voltage threshold
Control unit being opened and turning off；
The output pin of the comparator is connect with the input terminal of the third phase of the second signal isolated location, and described
The output end of three-phase is connect with one end of the third channel of the Logical processing unit；The other end of the third channel with it is described
Driving signal control unit connection, to turn off the silicon carbide device；
The Logical processing unit is used for: the silicon carbide device grid voltage since opening threshold value to opening out
The first stage of existing Miller platform or the silicon carbide device grid voltage Miller platform from start to end the
Two-stage keeps first controller and the voltage threshold control unit open-minded；And the output letter of the storage comparator
Number.
In some preferred embodiments, the voltage threshold control unit includes second controller and first resistor,
First pin of the second controller is connect with the output end of second phase, the second pin of the second controller and institute
The one end for stating first resistor is commonly connected to the second input pin of the comparator, the third pin of the second controller and
The other end of the first resistor is connected to ground jointly.
In some preferred embodiments, the driving signal control unit includes sequentially connected logic chip,
One signal isolation unit, push-pull circuit and gate driving circuit；First input pin of the logic chip is for inputting PWM letter
Number, the second input pin of the logic chip is connect with the other end of the third channel；The second of first controller
Pin is connected between the push-pull circuit and the gate driving circuit.
On the other hand, the present invention provides a kind of computer readable storage medium, and being stored with makes in conjunction with calculating equipment
Computer program, the computer program can be executed by processor to realize the above method.
Compared with prior art, the beneficial effects of the present invention are as follows:
Carry out short trouble detection and protection by the way of detecting grid voltage, fast response time, the response time is main
It is controlled by the delay time of Logical processing unit and comparator and drive control unit, can will be responded using existing circuit
Time controls within 500ns.Meanwhile it being carried out by the continuous detection in two stages, and by fault-signal lock cell
Identifying processing reduces the risk of wrong report failure, improves the stability of system.When directly can occur short-circuit by silicon carbide device
Grid voltage come identify whether occur short trouble, while within the promising time turn off grid driving signal, such detection side
Formula is almost applicable to the short-circuit detecting of all sic device circuitry in the market, only need to according to different silicon carbide device circuits come
The threshold value for changing corresponding comparator, without being designed according to different encapsulation being customized of characteristic of different silicon carbide device circuits,
It is versatile, reduce cost.
Detailed description of the invention
Fig. 1 is the structure chart of the silicon carbide device short-circuit protection circuit of the embodiment of the present invention；
Fig. 2 is a kind of particular circuit configurations figure of the silicon carbide device short-circuit protection circuit of the embodiment of the present invention；
Fig. 3 is the flow chart of the silicon carbide device short-circuit protection method of the embodiment of the present invention；
Fig. 4 is the waveform diagram of silicon carbide device.
Specific embodiment
Referring to figs. 1 to Fig. 4, elaborate below to embodiments of the present invention.It is emphasized that following the description is only
It is merely exemplary, the range and its application being not intended to be limiting of the invention.
With reference to Fig. 1, the silicon carbide device short-circuit protection circuit of the embodiment of the present invention include driving signal control unit 100,
Short-circuit protection detection unit 200 and fault-signal lock cell 300.
With reference to Fig. 1 and Fig. 2, driving signal control unit 100 is mainly driving signal control circuit.Driving signal control is single
One end of member 100 and the equipment connection for generating PWM (Pulse Width Modulation, pulse width modulation) signal, are used for
Input pwm signal；The other end of driving signal control unit 100 is connect with the grid of silicon carbide device 400.Pwm signal passes through
After the processing of driving signal control unit 100, it is input to the grid of silicon carbide device 400, to control opening for silicon carbide device 400
Logical or shutdown.
With reference to Fig. 1 and Fig. 2, short-circuit protection detection unit 200 is mainly short-circuit protection detection circuit.Logical processing unit 21
First passage CP1 one end and second channel CP2 one end with generate pwm signal equipment connect, for input PWM believe
Number.The other end of first passage CP1 is connect with the input terminal of the first phase A of second signal isolated location T2, the output of the first phase A
End is then connect with the first pin of the first controller SW1 namely pin 1, to control opening and turning off for the first controller SW1.The
The other end of two channel CP2 is connect with the input terminal of the second phase B of second signal isolated location T2, the output end of the second phase B with
Voltage threshold control unit 22 connects, and to control voltage threshold control unit 22, for example controls it and opens and turn off or control
The size of its output voltage threshold value.The second pin namely pin 2 and driving signal control unit 100 of first controller SW1 connects
It connects, to detect the gate voltage signal of silicon carbide device 400, the third pin namely pin 3 and comparator of the first controller SW1
The first input pin namely pin 1 of U2 connects.The second input pin of voltage threshold control unit 22 and comparator U2 namely
Pin 2 connects, and first voltage threshold value or second voltage threshold value are input to comparator U2.
With reference to Fig. 1 and Fig. 2, fault-signal lock cell 300 is mainly fault-signal output and fault logic analysis processing
Circuit.The output pin namely pin 3 of comparator U2 is connect with the input terminal of the third phase C of second signal isolated location T2, the
The output end of three-phase C is connect with one end of the third channel CP3 of Logical processing unit 21.The other end of third channel CP3 and drive
Dynamic signaling control unit 100 connects, to turn off silicon carbide device.
Driving signal control unit 100 is mainly driving signal control circuit, handles pwm signal, can generate and prolong
When.This just needs to control the first controller SW1 and the gate voltage signal of silicon carbide device 400 is input to ratio at the time of appropriate
It compared with device U2, while also to control voltage threshold control unit 22 and voltage threshold is input to comparator U2, to detect silicon carbide
Whether device 400 there is short circuit.Therefore, Logical processing unit 21 is used for: in the grid voltage of silicon carbide device 400 from opening threshold
Value start to open the first stage for Miller platform occur or silicon carbide device 400 grid voltage Miller platform from opening
Begin to the second stage of end, keeps the first controller SW1 and voltage threshold control unit 22 open-minded；And storage comparator U2 exists
The output signal of first stage and second stage.
Second signal isolated location T2 is used to that signal to be isolated, including Magnetic isolation and light-coupled isolation.
Driving signal control unit 100 is used for: pwm signal is transferred to secondary side, grid by primary side logical process, isolation
After driving signal recommends enhanced processing, the grid of silicon carbide device 400 is allow to be opened or be closed according to driving signal instruction
It is disconnected.
Short-circuit protection detection unit 200 is used for: being detected by the grid voltage in two stages, and isolation two ranks of transmission
The failure pulse signal of section is handled to Logical processing unit 21.
Fault-signal lock cell 300 is used for: when Logical processing unit 21 continuously receives the down pulse in two stages
After signal, after inside carries out identifying processing, and one constant fault-signal of output and primary side logic are handled, silicon carbide device
The gate turn-off of part 400, short-circuit protection come into force.
The embodiment of the present invention is described in detail in conjunction with the silicon carbide device short-circuit protection method of the embodiment of the present invention.
With reference to Fig. 3, the silicon carbide device short-circuit protection method of the embodiment of the present invention includes step S1 to step S6.
Step S1, input drive signal controls opening or closing for silicon carbide device 400 to the grid of silicon carbide device 400
It is disconnected.
In normal state, pwm signal is input to the one of driving signal control unit 100 by the equipment for generating pwm signal
End.Pwm signal is processed into driving signal by driving signal control unit 100, is input to the grid of silicon carbide device 400, thus
It is switched on or off silicon carbide device 400 normally, such as: it is open-minded in the high level time section of pwm signal, in low level time section
Shutdown.First passage CP1 and second channel CP2 the storage silicon carbide device 400 of Logical processing unit 21 are normal and open shutdown
When gate waveform the short-circuit detection time 1. voltage threshold with short-circuit detection time 2..
Step S2, occur the of Miller platform to opening since opening threshold value in the grid voltage of silicon carbide device 400
One stage, the first real time gate voltage when detection silicon carbide device 400 operates.
With reference to Fig. 4, the first stage be short-circuit detection time 1..During this period of time, the grid voltage of silicon carbide device 400
Waveform variation are as follows: to Miller platform when opening since opening threshold value VGS (th).The first passage of Logical processing unit 21
CP1 handles pwm signal, keeps delay consistent with the driving signal of silicon carbide device 400, is isolated by second signal single
The first phase A isolation of first T2 is transmitted to the pin 1 of the first controller SW1, makes the first controller SW1 is interior in the first stage to synchronize out
It is logical, by the pin 1 of the first real time gate voltage transmission of silicon carbide device 400 to comparator U2.
In Fig. 4, VDS is tube voltage drop, and Id is drain current.
Step S3, the first electricity of the grid voltage for being normally switched on or off the first real time gate voltage and silicon carbide device
Pressure threshold value is compared, if the first real time gate voltage is greater than first voltage threshold value, exports Fisrt fault signal.
In the first stage, silicon carbide device 400 is in case of short circuit, the grid when waveform of grid voltage is than operating normally
The absolute difference of the waveforms amplitude of voltage slowly increases.The second channel CP2 of Logical processing unit 21 to pwm signal at
Reason keeps delay consistent with the driving signal of silicon carbide device 400, is isolated by the second phase B of second signal isolated location T2
It is transmitted to voltage threshold control unit 22, makes voltage threshold control unit 22 that first voltage threshold value to be input to the pipe of comparator U2
Foot 2.Wherein, first voltage threshold value is pre-set according to the characteristic of silicon carbide device 400, can be a constant value,
It is also possible to continually changing value at any time.
First real time gate voltage and first voltage threshold value are compared by comparator U2, if the first real time gate voltage is big
In first voltage threshold value, that is, when the voltage of the pin 1 of comparator U2 is higher than the voltage of pin 2, comparator U2 overturning is compared
3 output level of pin of device U2 is overturn, and is exported Fisrt fault signal, is separated by by the third phase C of second signal isolated location T2
It is stored from the third channel CP3 for being transferred to Logical processing unit 21.
Step S4, the second stage in the Miller platform of the grid voltage of silicon carbide device 400 from start to end, detection
The second real time gate voltage when silicon carbide device 400 operates.
With reference to Fig. 4, second stage be short-circuit detection time 2..During this period of time, the grid voltage of silicon carbide device 400
Waveform variation are as follows: Miller platform start and ending when being opened from silicon carbide device.The first passage CP1 of Logical processing unit 21
Pwm signal is handled, keeps delay consistent with the driving signal of silicon carbide device 400, by second signal isolated location
The first phase A isolation of T2 is transmitted to the pin 1 of the first controller SW1, synchronizes out the first controller SW1 in second stage
It is logical, by the pin 1 of the second real time gate voltage transmission of silicon carbide device 400 to comparator U2.
Step S5, the second real time gate voltage is compared with second voltage threshold value, if the second real time gate voltage is big
In second voltage threshold value, then the second fault-signal is exported；Wherein, second voltage threshold value is greater than first voltage threshold value.
In second stage, silicon carbide device 400 is in case of short circuit, when the waveforms amplitude of grid voltage is than operating normally
Grid voltage waveforms amplitude absolute difference it is obviously higher compared with the first stage.The second channel CP2 of Logical processing unit 21
Pwm signal is handled, keeps delay consistent with the driving signal of silicon carbide device 400, by second signal isolated location
The second phase B isolation of T2 is transmitted to voltage threshold control unit 22, keeps voltage threshold control unit 22 that second voltage threshold value is defeated
Enter to the pin 2 of comparator U2.Wherein, second voltage threshold value is also pre-set according to the characteristic of silicon carbide device 400, can
To be a constant value, it is also possible to continually changing value at any time.
Second real time gate voltage and second voltage threshold value are compared by comparator U2, if the second real time gate voltage is big
In second voltage threshold value, that is, when the voltage of the pin 1 of comparator U2 is higher than the voltage of pin 2, comparator U2 overturning is compared
3 output level of pin of device U2 is overturn, and exports the second fault-signal, is isolated by the third phase C of second signal isolated location T2
The third channel CP3 for being transferred to Logical processing unit 21 is stored.
If step S6, being consecutively detected Fisrt fault signal and the second fault-signal, determine that silicon carbide device 400 occurs
Short circuit stops to the grid input drive signal of silicon carbide device 400.
Fisrt fault signal shows that silicon carbide device 400 short circuit occurs in the above-mentioned first stage, and the second fault-signal is then
Show that silicon carbide device 400 short circuit occurs in above-mentioned second stage.The fault-signal in above-mentioned two stage is by logical process list
The third channel CP3 of member 21 is stored, if Logical processing unit 21 is consecutively detected Fisrt fault signal and the second failure letter
Number, for example during silicon carbide device 400 opens primary, Logical processing unit 21 carries out identifying processing, is determined as silicon carbide
Short circuit occurs for device 400, and third channel CP3 exports a constant fault-signal to driving signal control unit 100, turns off carbon
The driving signal of 400 grid of SiClx device ensures the reliability service of silicon carbide device 400.
Since the conveyance capacity of silicon carbide device is relatively poor, when short circuit occurs for silicon carbide device, it is necessary within 3us
The driving signal of grid is turned off, to have the function that protect device.It is by capacitance-resistance charge and discharge that conventional short-circuit, which protects detection circuit,
To realize the control to the response time.For the short response time requirement of silicon carbide device, capacitance-resistance charge and discharge system is easy to produce
It reports failure by mistake, influences the stable operation of system.
The present invention carries out short trouble detection and protection by the way of detecting grid voltage, fast response time, when response
Between mainly controlled by the delay time of Logical processing unit 21 and comparator U2 and drive control unit 100, use is existing
Circuit can will control within 500ns the response time, that is, turn off carbonization from detecting that being shorted to occurs in silicon carbide device
Silicon device is completed within 500ns.Meanwhile by the continuous detection in two stages, and pass through fault-signal lock cell 300
Identifying processing is carried out, the risk of wrong report failure is reduced, improves the stability of system.
The present invention can directly by silicon carbide device occur short circuit when grid voltage come identify whether occur short trouble,
Turn off the driving signal of grid within the promising time simultaneously, such detection mode is almost applicable to all sic device in the market
The short-circuit detecting of part circuit need to only change the threshold value of corresponding comparator according to different silicon carbide device circuits, without according to not
It is versatile with different encapsulation being customized of the characteristic designs of silicon carbide device circuit, reduce cost.
Invention is described further below.
Driving signal control unit 100 includes sequentially connected logic chip U1, the first signal isolation unit T1, recommends electricity
Road and gate driving circuit U3；Wherein, push-pull circuit includes recommending metal-oxide-semiconductor Q1 and recommending metal-oxide-semiconductor Q2.The first of logic chip U1
Input pin namely pin 1 are connect for inputting pwm signal, namely with the equipment for generating pwm signal；The second of logic chip U1
Input pin namely pin 2 are connect with the other end of third channel CP3；The output pin namely pin 3 of logic chip U1 and drive
The input terminal of dynamic isolating chip T1 is connected；The output end connection of driving isolating chip T1 recommends metal-oxide-semiconductor Q1 and recommends metal-oxide-semiconductor Q2's
Grid, the drain electrode for recommending metal-oxide-semiconductor Q1 are connected with power supply VISO, and the drain electrode for recommending metal-oxide-semiconductor Q2 is connected with power ground GND, recommend MOS
The source electrode of pipe Q1 is connected with the source electrode for recommending metal-oxide-semiconductor Q2, and is connected to input terminal and the first control of gate driving circuit U3 together
The second pin namely pin 2 of device SW1 processed, i.e. the second pin of the first controller SW1 namely pin 2 be connected to push-pull circuit and
Between gate driving circuit U3.Wherein, gate driving circuit U3 includes grid resistance, grid capacitance, clamp circuit etc..
Voltage threshold control unit 22 includes second controller SW2 and first resistor R2, the first pipe of second controller SW2
Foot namely pin 1 are connect with the output end of the second phase B, the second pin namely pin 2 and first resistor R2 of second controller SW2
One end be commonly connected to the second input pin namely pin 2 of comparator U2, the third pin namely pipe of second controller SW2
The other end of foot 3 and first resistor R2 are connected to ground GND jointly.
First voltage threshold value generates in this way: the second channel CP2 of Logical processing unit 21 to pwm signal at
Reason keeps delay consistent with the driving signal of silicon carbide device 400, is isolated by the second phase B of second signal isolated location T2
It is transmitted to the pin 1 of second controller SW2, second controller SW2 is closed, and the first voltage threshold generated is determined by first resistor R2
The size of value.It recommends metal-oxide-semiconductor Q1 and is input to comparator U2's by the first controller SW1 with the source signal for recommending metal-oxide-semiconductor Q2
Pin 1.The voltage of pin 1 and pin 2 is compared by comparator U2.
Second voltage threshold value generates in this way: the second channel CP2 of Logical processing unit 21 to pwm signal at
Reason keeps delay consistent with the driving signal of silicon carbide device 400, is isolated by the second phase B of second signal isolated location T2
It is transmitted to the pin 1 of second controller SW2, second controller SW2 is open-minded, common by second controller SW2 and first resistor R2
Determine the size of the second voltage threshold value generated, namely the voltage threshold of the pin 2 by second controller SW2 adjusting comparator U2
Value.It recommends metal-oxide-semiconductor Q1 and recommends the source signal of metal-oxide-semiconductor Q2 and be input to the pin 1 of comparator U2 by the first controller SW1.
The voltage of pin 1 and pin 2 is compared by comparator U2.
A kind of computer readable storage medium is stored with the computer program being used in combination with calculating equipment, the meter
Calculation machine program can be executed by processor to realize the above method.
The present invention can be compatible with various silicon carbide devices, while can accomplish to be reliably prevented shorted devices again, ensure device
Reliability service, have the advantages that circuit is simple, it is easily controllable；Detection circuit accuracy is high；It is versatile, it is easy to use；
It when short circuit occurs for device, is enable to respond quickly, protects device reliability service.
The above content is combine it is specific/further detailed description of the invention for preferred embodiment, cannot recognize
Fixed specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs,
Without departing from the inventive concept of the premise, some replacements or modifications can also be made to the embodiment that these have been described,
And these substitutions or variant all shall be regarded as belonging to protection scope of the present invention.
Claims (6)
1. a kind of silicon carbide device short-circuit protection method, characterized by comprising:
S1, input drive signal to silicon carbide device grid to control being switched on or off for the silicon carbide device；
S2, the silicon carbide device grid voltage since opening threshold value to opening the first stage for Miller platform occur,
Detect the first real time gate voltage when silicon carbide device running；
The first electricity of S3, the grid voltage for being normally switched on or off the first real time gate voltage and the silicon carbide device
Pressure threshold value is compared, if the first real time gate voltage is greater than the first voltage threshold value, exports Fisrt fault signal；
S4, the silicon carbide device grid voltage Miller platform second stage from start to end, detect the carbon
The second real time gate voltage when SiClx device operates；
S5, the second real time gate voltage is compared with second voltage threshold value, if the second real time gate voltage is big
In the second voltage threshold value, then the second fault-signal is exported；The second voltage threshold value is greater than the first voltage threshold value；
If S6, being consecutively detected the Fisrt fault signal and second fault-signal, the silicon carbide device hair is determined
Raw short circuit, stops to the grid input drive signal of the silicon carbide device.
2. silicon carbide device short-circuit protection method according to claim 1, it is characterised in that: exist to the response time of short circuit
Within 500ns.
3. a kind of silicon carbide device short-circuit protection circuit, it is characterised in that: including driving signal control unit, the first controller,
Comparator, Logical processing unit, second signal isolated location and voltage threshold control unit；
For inputting pwm signal, the grid of the other end and silicon carbide device is connected for one end of the driving signal control unit, with
Control being switched on or off for the silicon carbide device；
Second pin of first controller is connect with the driving signal control unit, to detect the silicon carbide device
Gate voltage signal, the third pin of first controller are connect with the first input pin of the comparator；
The voltage threshold control unit is connect with the second input pin of the comparator, by first voltage threshold value or second
Voltage threshold is input to the comparator；
One end of the first passage of the Logical processing unit and one end of second channel are used to input pwm signal, and described the
The input with the first phase of the second signal isolated location respectively of the other end of the other end in one channel and the second channel
End is connected with the input terminal of the second phase；
The output end of first phase is connect with the first pin of first controller, to control opening for first controller
Logical and shutdown；The output end of second phase is connect with the voltage threshold control unit, to control the voltage threshold control
Unit being opened and turning off；
The output pin of the comparator is connect with the input terminal of the third phase of the second signal isolated location, the third phase
Output end connect with one end of the third channel of the Logical processing unit；The other end of the third channel and the driving
Signaling control unit connection, to turn off the silicon carbide device；
The Logical processing unit is used for: the silicon carbide device grid voltage since opening threshold value to opening appearance rice
Strangle the first stage of platform or the Miller platform second-order from start to end of the grid voltage in the silicon carbide device
Section, keeps first controller and the voltage threshold control unit open-minded；And the output signal of the storage comparator.
4. silicon carbide device short-circuit protection circuit according to claim 3, it is characterised in that: the voltage threshold control is single
Member includes second controller and first resistor, and the first pin of the second controller is connect with the output end of second phase,
Second pin of the second controller and one end of the first resistor are commonly connected to the second input pipe of the comparator
Foot, the third pin of the second controller and the other end of the first resistor are connected to ground jointly.
5. silicon carbide device short-circuit protection circuit according to claim 3 or 4, it is characterised in that: the driving signal control
Unit processed includes sequentially connected logic chip, the first signal isolation unit, push-pull circuit and gate driving circuit；The logic
First input pin of chip is for inputting pwm signal, the second input pin and the third channel of the logic chip
Other end connection；Second pin of first controller is connected between the push-pull circuit and the gate driving circuit.
6. a kind of computer readable storage medium is stored with the computer program being used in combination with calculating equipment, the calculating
Machine program can be executed by processor to realize method as claimed in claim 1 or 2.
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| CN112886541A (en) * | 2021-03-05 | 2021-06-01 | 阳光电源股份有限公司 | Converter and IGBT gate drive protection circuit and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105445608A (en) * | 2015-11-30 | 2016-03-30 | 深圳市英威腾电气股份有限公司 | SIC MOSFET over-current short-circuit detection circuit and detection protection system |
| CN106688183A (en) * | 2014-09-11 | 2017-05-17 | 三菱电机株式会社 | Short-circuit protection circuit for self-arc-extinguishing semiconductor element |
| CN107026638A (en) * | 2016-02-01 | 2017-08-08 | 中车株洲电力机车研究所有限公司 | A kind of IGBT drive devices and driving method |
| CN108872761A (en) * | 2017-05-11 | 2018-11-23 | 富士电机株式会社 | Short-circuit detecting device and the device for having short-circuit detecting device |
| CN109061431A (en) * | 2018-08-22 | 2018-12-21 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET grid fault diagnosis system and diagnostic method based on gate charge |
| CN109743054A (en) * | 2018-12-05 | 2019-05-10 | 徐州中矿大传动与自动化有限公司 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method |
-
2019
- 2019-01-21 CN CN201910055346.4A patent/CN109742738B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106688183A (en) * | 2014-09-11 | 2017-05-17 | 三菱电机株式会社 | Short-circuit protection circuit for self-arc-extinguishing semiconductor element |
| US20170288385A1 (en) * | 2014-09-11 | 2017-10-05 | Mitsubishi Electric Corporation | Short-circuit protection circuit for self-arc-extinguishing type semiconductor element |
| CN105445608A (en) * | 2015-11-30 | 2016-03-30 | 深圳市英威腾电气股份有限公司 | SIC MOSFET over-current short-circuit detection circuit and detection protection system |
| CN107026638A (en) * | 2016-02-01 | 2017-08-08 | 中车株洲电力机车研究所有限公司 | A kind of IGBT drive devices and driving method |
| CN108872761A (en) * | 2017-05-11 | 2018-11-23 | 富士电机株式会社 | Short-circuit detecting device and the device for having short-circuit detecting device |
| CN109061431A (en) * | 2018-08-22 | 2018-12-21 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET grid fault diagnosis system and diagnostic method based on gate charge |
| CN109743054A (en) * | 2018-12-05 | 2019-05-10 | 徐州中矿大传动与自动化有限公司 | A kind of bis- class short circuit current suppression circuit of SiC MOSFET and method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112886541A (en) * | 2021-03-05 | 2021-06-01 | 阳光电源股份有限公司 | Converter and IGBT gate drive protection circuit and method |
| CN112886541B (en) * | 2021-03-05 | 2024-04-12 | 阳光电源股份有限公司 | Protection circuit and method for converter and IGBT gate electrode drive |
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