CN109742547A - The face low section ultra wide band H electromagnetic horn based on SIW and preparation method thereof - Google Patents
The face low section ultra wide band H electromagnetic horn based on SIW and preparation method thereof Download PDFInfo
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- CN109742547A CN109742547A CN201910025942.8A CN201910025942A CN109742547A CN 109742547 A CN109742547 A CN 109742547A CN 201910025942 A CN201910025942 A CN 201910025942A CN 109742547 A CN109742547 A CN 109742547A
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Abstract
The invention discloses a kind of face the low section ultra wide band H electromagnetic horn based on SIW, the face low section ultra wide band H electromagnetic horn include converter section, ridge waveguide, the face the H electromagnetic horn and dielectric-slab for loading ridge structure.The face low section ultra wide band H electromagnetic horn mentioned by the present invention based on SIW, can operate at 6.6-18GHz, has good impedance matching and radiation characteristic, can be loaded into conductor platform.
Description
Technical field
The present invention relates to microwave radio field of antenna, in particular to a kind of face low section ultra wide band H loudspeaker based on SIW
Antenna and preparation method thereof.
Background technique
The military affairs skill such as the fast development of wireless communication technique and radar, early warning, detection, missile guidance and electronic countermeasure
Art is constantly progressive, and antenna is also evolving as the core component of wireless system.Industry and military project system are to antenna
The technical indicators such as construction profile, performance parameter, assembly method, size propose new demand, the potential need of high performance antenna
Ask the progress and development for further having pushed antenna technology.The structure type of antenna is from traditional three-dimensional mechanical structure to planar junction
Structure and the conformal structural development of carrier platform.
In traditional Military Application field, covert communications and it is anti-interference be most basic requirement, wherein spread spectrum communication is
The most important technological means of communication countersystem.The spread spectrum mode generallyd use be frequency hopping spread spectrum and wide-band linearity frequency hopping, but with
The development of frequency hopping, the rate and range of frequency hopping also increase accordingly.Therefore, traditional narrow-band antenna is jumped far from satisfaction
The requirement of frequency task.It studies the high performance broad-band antenna for being applicable to multiple frequency ranges and is only effective solution.It is wide
Band antenna technology, be mainly used in military field in early days, radar monitoring, anti-stealth technololgy, in terms of have protrusion
Contribution.In recent years, super-broadband tech is also gradually introduced into civil field, in broadband connections, spread spectrum communication, Ground Penetrating Radar, field
The fields such as measurement, electromagnetic compatibility have a wide range of applications.With the increase and message capacity of radio communication service type
Improve, in order to meet the demands for development of various commercial and military wireless device, people are to light-weight, flexible structure, section is low and
The antenna requirements being easily integrated also become strong.Although some traditional antennas are able to achieve ultra wide band characteristic and firm gain,
But in order to adapt to the development of future wireless system, antenna will not only pursue wide band characteristic, while also take into account small-sized
Change, polarizes and with problems such as interior directional diagram stability.The miniaturization of antenna, which is mainly reflected in, reduces antenna structure size packet
Include the section for reducing antenna.Modern Satellite broadcast, the communication system of cell phone platform, unmanned plane detection system etc. are increasingly relied on for counsel
In low section, broad-band antenna.Therefore, the structure and mechanism of ultralow section broad-band antenna are explored and develop, research and solution are suitble to
Missile-borne, key technology of the airborne ultra-wideband antenna in design and test have important scientific meaning and engineer application valence
Value.
Summary of the invention
It is an object of that present invention to provide a kind of face the low section ultra wide band H electromagnetic horn and preparation method thereof based on SIW, energy
6.6-18GHz is enough worked in, there is good impedance matching and radiation characteristic, conductor platform can be loaded into.
To reach above-mentioned purpose, in conjunction with Fig. 1 to Fig. 4, the present invention proposes a kind of face low section ultra wide band H loudspeaker based on SIW
Antenna, the face low section ultra wide band H electromagnetic horn include converter section, ridge waveguide, load ridge structure the face H electromagnetic horn and
Dielectric-slab;
The dielectric-slab includes the patch layer, dielectric layer, metal layer overlapped from top to bottom along the vertical direction, the patch
Lamella, dielectric layer, metal layer are parallel to each other;
On the ground, the dielectric layer is attached by metal layer and ground and is connected the dielectric-slab parallel laid;
The face the H electromagnetic horn of the load ridge structure includes the first side wall portion being arranged on dielectric-slab, second side wall portion
And ridge structure;
The first side wall portion and second side wall portion include being arranged on dielectric-slab to be arranged in two at an angle directly
Several first metal throuth holes of line, the extending direction of each first metal throuth hole is perpendicular to the ground, and each first metal is logical
Kong Jun runs through dielectric-slab;
The first side wall portion and second side wall portion are symmetricly set on ridge structure two sides, and the extending direction along ridge structure is in loudspeaker
Subtended angle shape;
The first metal throuth hole equidistant arrangement that the first side wall portion includes, the first metal throuth hole that second side wall portion includes
Equidistant arrangement;
The ridge structure includes the first groove that dielectric-slab upper surface is arranged in step type, the extension side of shaft centre line
To ground is parallel to, ridge structure includes sequentially connected first stepped part, second step ladder, third stepped part;
The width of first stepped part, depth are respectively greater than the width of second step ladder, depth, the width of second step ladder
Degree, depth are respectively greater than the width of third stepped part, depth;
The ridge waveguide is connect with the first stepped part far from one end of second step ladder, the extension side of the rectangular cavity of ridge waveguide
To the extending direction of the shaft centre line perpendicular to ridge structure;
The second groove is provided on the dielectric-slab bottom;
The converter section includes inverted cone-shaped probe and curved surface short board;
The inverted cone-shaped probe includes conical lower portion interconnected and probe portion, wherein conical lower portion is arranged second
It in groove, is connect with ridge waveguide, probe portion extends to outside the second groove;
The curved surface short board includes several second metal throuth holes being arranged on dielectric-slab, and the second metal throuth hole prolongs
It is perpendicular to the ground to stretch direction, each second metal throuth hole runs through dielectric-slab;
Several described second metal throuth holes surround ridge waveguide equidistant arrangement, constitute an arc arms and respectively with circular arc
The first straight line arm and second straight line arm of arm both ends connection, wherein first straight line arm and second straight line arm with the axis of ridge structure
Centerline parallel, and one end that first straight line arm is not connect with arc arms is connected to one end that ridge waveguide is closed in the first side wall portion,
One end that second straight line arm is not connect with arc arms is connected to one end that second side wall portion closes on ridge waveguide.
In further embodiment, the dielectric layer upper surface is provided with patch layer, and patch layer includes interconnected short
Road chamber and arc-shaped bore portion;
The one end of third stepped part far from second step ladder is arranged in the arc-shaped bore portion, identical by two radiuses
Disk intersect composition.
In further embodiment, the dielectric layer has one to extend dielectric portion relative to patch layer;
The extension dielectric portion is located at the described arc-shaped one end of bore portion far from the face H electromagnetic horn.
In further embodiment, the extension dielectric portion is in arc-shaped.
In further embodiment, the bottom of first groove is arranged in dielectric layer.
In further embodiment, the ridge waveguide uses single ridge waveguide structure.
In further embodiment, there is an air between the conical lower portion side surface and dielectric-slab of the inverted cone-shaped probe
Chamber.
In further embodiment, the length of first stepped part is greater than the length of second step ladder and third stepped part
The sum of.
In further embodiment, the dielectric-slab use with a thickness of 3.175mm, dielectric constant for 2.2 Rogers
5880 are made.
Based on aforementioned structure, the present invention refers to a kind of production side of the face low section ultra wide band H electromagnetic horn based on SIW
Method, which comprises
SIW technology is used to make the aforementioned face the low section ultra wide band H electromagnetic horn based on SIW.
The above technical solution of the present invention, compared with existing, significant beneficial effect is,
1) present invention realizes broadband mistake of the electromagnetic field from SMA to ridge waveguide by back taper probe and arc-shaped short-circuit chamber
It crosses, working band 6-18GHz.
2) present invention, which selects, is used as medium substrate with a thickness of 3.175mm, the Rogers 5880 that dielectric constant is 2.2, uses
SIW technology realizes that the face low section H electromagnetic horn, more existing antenna have thinner thickness and broader bandwidth.
3) present invention widens single mode operation bandwidth by introducing ridge structure.And ridge waveguide is realized using stepped ridge structure
To the transition of bell mouth diameter, using the convex change of the smooth bell mouth diameter of arc-shaped bore and free space, realizing has stabilising direction
The broadband face the H electromagnetic horn of figure.
It should be appreciated that as long as aforementioned concepts and all combinations additionally conceived described in greater detail below are at this
It can be viewed as a part of the subject matter of the disclosure in the case that the design of sample is not conflicting.In addition, required guarantor
All combinations of the theme of shield are considered as a part of the subject matter of the disclosure.
Can be more fully appreciated from the following description in conjunction with attached drawing present invention teach that the foregoing and other aspects, reality
Apply example and feature.The features and/or benefits of other additional aspects such as illustrative embodiments of the invention will be below
Description in it is obvious, or learnt in practice by the specific embodiment instructed according to the present invention.
Detailed description of the invention
Attached drawing is not intended to drawn to scale.In the accompanying drawings, identical or nearly identical group each of is shown in each figure
It can be indicated by the same numeral at part.For clarity, in each figure, not each component part is labeled.
Now, example will be passed through and the embodiments of various aspects of the invention is described in reference to the drawings, in which:
Fig. 1 is the face the H electromagnetic horn structural schematic diagram of the loading stepped type ridge based on SIW technology.
Fig. 2 is the single ridge waveguide structure figure based on SIW.
Fig. 3 is the structural schematic diagram of the conversion of SMA to ridge waveguide.
Fig. 4 is the short-circuit cavity and bore structural schematic diagram of the face H electromagnetic horn.
Fig. 5 is the standing-wave ratio of the face low section ultra wide band H electromagnetic horn.
Fig. 6 is the gain of the face low section ultra wide band H electromagnetic horn.
Fig. 7 is the far field normalized radiation pattern of the face low section ultra wide band H electromagnetic horn.
Fig. 8 is the sidelobe level and front and back ratio of the face low section ultra wide band H electromagnetic horn directional diagram.
Specific embodiment
In order to better understand the technical content of the present invention, special to lift specific embodiment and institute's accompanying drawings is cooperated to be described as follows.
Specific embodiment one
In conjunction with Fig. 1 to Fig. 4, the present invention proposes a kind of face low section ultra wide band H electromagnetic horn based on SIW, described low to cut open
The face face ultra wide band H electromagnetic horn includes converter section, ridge waveguide 13, the face the H electromagnetic horn 11 and dielectric-slab for loading ridge structure.
The dielectric-slab includes the patch layer 14 overlapped from top to bottom along the vertical direction, dielectric layer 15, metal layer, institute
It is parallel to each other to state patch layer 14, dielectric layer 15, metal layer.
On ground 20, the dielectric layer 15 is attached by metal layer and ground and is connected the dielectric-slab parallel laid.
Preferably, the dielectric-slab, which uses, is made with a thickness of 3.175mm, dielectric constant for 2.2 Rogers 5880.
The first side wall portion 111 of upper surface of the face the H electromagnetic horn 11 including dielectric-slab is arranged in of the load ridge structure,
Second side wall portion 112 and ridge structure 113.
The first side wall portion 111 and second side wall portion 112 include that being arranged on dielectric-slab at an angle is arranged in
Several first metal throuth holes of two straight lines, the extending direction of each first metal throuth hole is vertical with ground 20, Mei Ge
One metal throuth hole runs through dielectric-slab.
The first side wall portion 111 and second side wall portion 112 are symmetricly set on 113 two sides of ridge structure, along ridge structure 113
Extending direction is in horn flare angle shape.
The first metal throuth hole equidistant arrangement that the first side wall portion 111 includes, the first gold medal that second side wall portion 112 includes
Belong to through-hole equidistant arrangement.
The ridge structure 113 includes the first groove that dielectric-slab upper surface is arranged in step type, and shaft centre line prolongs
It stretches and is oriented parallel to ground 20, ridge structure 113 includes sequentially connected first stepped part 113a, second step ladder 113b, third
Stepped part 113c.
Preferably, the bottom of first groove is arranged in dielectric layer 15.
The width of the first stepped part 113a, depth are respectively greater than the width of second step ladder 113b, depth, second-order
The width of terraced portion 113b, depth are respectively greater than the width of third stepped part 113c, depth.
Preferably, the length of the first stepped part 113a is greater than the length of second step ladder 113b and third stepped part 113c
The sum of degree.
The present invention introduces ridge structure 113, widens single mode operation bandwidth by using the face the H electromagnetic horn of loading stepped type,
It realizes broadband, and realizes that ridge waveguide 13 arrives the transition in bell mouth diameter portion using stepped ridge structure 113.
The ridge waveguide 13 is connect with the first stepped part 113a far from one end of second step ladder 113b, the square of ridge waveguide 13
The extending direction of the shaft centre line for extending perpendicularly to ridge structure 113 of shape chamber.
Preferably, the ridge waveguide 13 uses 13 structure of single ridged waveguides, realizes broadband single mode by 13 structure of single ridged waveguides
Bandwidth of operation.
The second groove is provided on the dielectric-slab bottom.
The converter section includes inverted cone-shaped probe 12a and curved surface short board 12b.
The inverted cone-shaped probe 12a includes conical lower portion interconnected and probe portion, wherein conical lower portion setting is the
It in two grooves, is connect with ridge waveguide 13, probe portion extends to outside the second groove.
The curved surface short board 12b includes several second metal throuth holes being arranged on dielectric-slab, the second metal throuth hole
Extending direction it is vertical with ground 20, each second metal throuth hole runs through dielectric-slab.
Several described second metal throuth holes surround 13 equidistant arrangement of ridge waveguide, constitute an arc arms and respectively with circle
The first straight line arm and second straight line arm of arc arm both ends connection, wherein first straight line arm and second straight line arm with ridge structure 113
Shaft centre line it is parallel, and one end for not connecting with arc arms of first straight line arm is connected to the first side wall portion 111 and closes on ridge waveguide
13 one end, one end that second straight line arm is not connect with arc arms are connected to one end that second side wall portion 112 closes on ridge waveguide 13.
In some instances, there is an air between the conical lower portion side surface and dielectric-slab of the inverted cone-shaped probe 12a
Chamber 16.
The present invention realizes electromagnetic wave by coaxial line to ridge waveguide using back taper probe and curved surface short board 12b in broadband
13 conversion.
The patch layer 14 includes short-circuit chamber interconnected and arc-shaped bore portion.
The one end of third stepped part 113c far from second step ladder 113b is arranged in the arc-shaped bore portion, by two
The identical disk intersection composition of radius.Preferably, the center of circle of two disks is symmetrical arranged relative to ridge structure 113.
The present invention realizes the smooth transition of low section aperture antenna and free space by using arc-shaped bell mouth diameter, obtains
It obtains broadband and improves radiation characteristic, realizing has the broadband face the H electromagnetic horn of stabilising direction figure.
In further embodiment, the dielectric-slab has one to extend dielectric portion relative to patch layer 14;
The extension dielectric portion is located at the described arc-shaped one end of bore portion far from the face H electromagnetic horn.
Preferably, the extension dielectric portion is in arc-shaped.
In some instances, dielectric-slab is selected to make the face the low section ultra wide band H loudspeaker of the present invention based on SIW
Antenna, dielectric-slab include dielectric layer 15 and the first metal layer and second metal layer that 15 two sides of dielectric layer are arranged in, wherein
Dielectric layer 15 attaches connection by being located at the second metal layer below dielectric-slab and ground 20, then will be located at 15 top of dielectric layer
The first metal layer is fabricated to patch layer 14, and dielectric layer 15 is used as relative to the part that patch layer 14 extends extends dielectric portion.
The production method that the present invention further mentions a kind of face low section ultra wide band H electromagnetic horn based on SIW, the method packet
It includes:
SIW technology is used to make the aforementioned face the low section ultra wide band H electromagnetic horn based on SIW.
By using SIW technology, the production of the face low section H electromagnetic horn unit is realized, more existing antenna has thinner
Thickness and broader bandwidth are able to achieve the bending of structure, conformal in curved conductor surface.
Specific embodiment two
Fig. 1 is the engineering structure figure of the face the low section ultra wide band H electromagnetic horn based on SIW.It is found that antenna is by SMA to ridge
The converter of waveguide 13, stepped ridged horn and arc-shaped bore composition, wherein converter is put into from dielectric-slab bottom, arc-shaped
Bore is made of two identical circle intersections, design parameter W=56mm, L=71.3mm, A=30.5mm, Dd=40mm, Du
=50mm, Db=1mm, Ds=15mm, d1=2mm, l=26.3mm, a=12.7mm, rup=3.4mm, r=5.6mm, R=
24.5mm, yf=5.5mm, yr=6.5mm, w1=4.5mm, w2=3.8mm, w3=2mm, l1=16.4mm, l2=4.8mm,
L3=4.2mm, b1=2.3mm, b2=1.9mm, b3=1.4mm, s=1.7mm, d=1mm, h=3.175mm.
In conjunction with figure 5-8, it can be seen that the present invention is able to solve the conformal pass in curved conductor platform of the face H electromagnetic horn
Key problem, guarantee antenna have the characteristics such as ultra wide band, stable directional diagram in the case where structural bending.
Various aspects with reference to the accompanying drawings to describe the present invention in the disclosure, shown in the drawings of the embodiment of many explanations.
Embodiment of the disclosure need not be defined on including all aspects of the invention.It should be appreciated that a variety of designs and reality presented hereinbefore
Those of apply example, and describe in more detail below design and embodiment can in many ways in any one come it is real
It applies, this is because conception and embodiment disclosed in this invention are not limited to any embodiment.In addition, disclosed by the invention one
A little aspects can be used alone, or otherwise any appropriately combined use with disclosed by the invention.
Although the present invention has been disclosed as a preferred embodiment, however, it is not to limit the invention.Skill belonging to the present invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (10)
1. a kind of face low section ultra wide band H electromagnetic horn based on SIW, which is characterized in that the face low section ultra wide band H loudspeaker
Antenna includes converter section, ridge waveguide, the face the H electromagnetic horn and dielectric-slab for loading ridge structure;
The dielectric-slab includes the patch layer, dielectric layer, metal layer overlapped from top to bottom along the vertical direction, the patch
Layer, dielectric layer, metal layer are parallel to each other;
On the ground, the dielectric layer is attached by metal layer and ground and is connected the dielectric-slab parallel laid;
The face the H electromagnetic horn of the load ridge structure includes the first side wall portion being arranged on dielectric-slab, second side wall portion and ridge
Structure;
The first side wall portion and second side wall portion include being arranged on dielectric-slab to be arranged in two straight lines at an angle
The extending direction of several first metal throuth holes, each first metal throuth hole is perpendicular to the ground, and each first metal throuth hole is equal
Through dielectric-slab;
The first side wall portion and second side wall portion are symmetricly set on ridge structure two sides, and the extending direction along ridge structure is in loudspeaker
Horn shape;
The first metal throuth hole equidistant arrangement that the first side wall portion includes, the first metal throuth hole that second side wall portion includes are equidistant
Arrangement;
The ridge structure includes the first groove that dielectric-slab upper surface is arranged in step type, and the extending direction of shaft centre line is flat
For row in ground, ridge structure includes sequentially connected first stepped part, second step ladder, third stepped part;
The width of first stepped part, depth are respectively greater than the width of second step ladder, depth, the width of second step ladder,
Depth is respectively greater than the width of third stepped part, depth;
The ridge waveguide is connect with the first stepped part far from one end of second step ladder, and the extending direction of the rectangular cavity of ridge waveguide hangs down
Directly in the extending direction of the shaft centre line of ridge structure;
The second groove is provided on the dielectric-slab bottom;
The converter section includes inverted cone-shaped probe and curved surface short board;
The inverted cone-shaped probe includes conical lower portion interconnected and probe portion, wherein conical lower portion is arranged in the second groove
It is interior, it is connect with ridge waveguide, probe portion extends to outside the second groove;
The curved surface short board includes several second metal throuth holes being arranged on dielectric-slab, the extension side of the second metal throuth hole
To perpendicular to the ground, each second metal throuth hole runs through dielectric-slab;
Several described second metal throuth holes surround ridge waveguide equidistant arrangement, constitute an arc arms and respectively with arc arms two
Hold the first straight line arm and second straight line arm of connection, wherein first straight line arm and second straight line arm with the axis center of ridge structure
Line is parallel, and one end for not connecting with arc arms of first straight line arm is connected to one end that ridge waveguide is closed in the first side wall portion, and second
One end that linear arm is not connect with arc arms is connected to one end that second side wall portion closes on ridge waveguide.
2. the face the low section ultra wide band H electromagnetic horn according to claim 1 based on SIW, which is characterized in that the patch
Layer includes short-circuit chamber interconnected and arc-shaped bore portion;
The one end of third stepped part far from second step ladder is arranged in the arc-shaped bore portion, by the identical circle of two radiuses
Piece intersection composition.
3. the face the low section ultra wide band H electromagnetic horn according to claim 2 based on SIW, which is characterized in that the medium
Layer has one to extend dielectric portion relative to patch layer;
The extension dielectric portion is located at the described arc-shaped one end of bore portion far from the face H electromagnetic horn.
4. the face the low section ultra wide band H electromagnetic horn according to claim 3 based on SIW, which is characterized in that the extension
Dielectric portion is in arc-shaped.
5. the face the low section ultra wide band H electromagnetic horn according to claim 1 based on SIW, which is characterized in that described first
The bottom of groove is arranged in dielectric layer.
6. the face the low section ultra wide band H electromagnetic horn according to claim 1 based on SIW, which is characterized in that the ridge ripple
It leads using single ridge waveguide structure.
7. the face the low section ultra wide band H electromagnetic horn according to claim 1 based on SIW, which is characterized in that the back taper
There is an air chamber between the conical lower portion side surface of type probe and dielectric-slab.
8. the face the low section ultra wide band H electromagnetic horn according to claim 1 based on SIW, which is characterized in that described first
The length of stepped part is greater than the sum of second step ladder and the length of third stepped part.
9. the face the low section ultra wide band H electromagnetic horn according to claim 1 based on SIW, which is characterized in that the medium
Plate, which uses, to be made with a thickness of 3.175mm, dielectric constant for 2.2 Rogers 5880.
10. a kind of production method of the face the low section ultra wide band H electromagnetic horn based on SIW, which is characterized in that the method packet
It includes:
SIW technology is used to make the face the low section ultra wide band H loudspeaker described in claim 1-9 any one based on SIW
Antenna.
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