CN109742254A - A kind of efficient OLED micro-display device and manufacturing method - Google Patents
A kind of efficient OLED micro-display device and manufacturing method Download PDFInfo
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- CN109742254A CN109742254A CN201910178309.2A CN201910178309A CN109742254A CN 109742254 A CN109742254 A CN 109742254A CN 201910178309 A CN201910178309 A CN 201910178309A CN 109742254 A CN109742254 A CN 109742254A
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Abstract
This patent is a kind of efficient OLED micro-display device and manufacturing method.The OLED device includes cathode, electron injecting layer EIL, electron transfer layer ELT, luminescent layer EML, hole transmission layer HTL, hole injection layer HIL, anode, thin-film encapsulation layer;Wherein the hole injection layer HIL is graphene oxide, anode material is handled using organic acid, so that the luminous efficiency and stability of OLED micro-display device are improved, the combination of OLED and CMOS technology simplify production process, reduce costs, improve performance.
Description
Technical field
This patent is related to OLED micro display field more particularly to a kind of efficient OLED micro-display device and manufacturer
Method.
Background technique
Organic elctroluminescent device (OLED) is a kind of emerging display device, due to low in energy consumption, volume is light
It the advantages that thin, fast response time, high light emission luminance, is widely used, and OLED micro-display device is even more OLED technology
It is intelligently wearing product and the camera/camcorder such as military-civil Helmet Mounted Display, VR/AR with the product of CMOS technology perfect combination
The critical component of view finder.
But the luminous efficiency and stability of traditional OLED device are poor, the compatibility between each layer is not sufficiently stable, than
If the energy level between anode and hole transmission layer differs greatly, so that the transmission from anode tap injected holes carrier is relatively tired
Difficulty, to directly affect the luminous efficiency of device, there are many more organic or electrode materials to the sensitivity pole of moisture and oxygen
Height, these are all the factors for influencing device light emitting efficiency.
This patent is based on the above problem and the new high efficiency OLED micro-display device and manufacturing method of one kind that proposes,
Suitable material is chosen, improves the luminous efficiency of OLED micro-display device, while thin-film package preferably protects OLED device, is increased
Add the service life of device.
Summary of the invention
Based on the above situation, this patent provides a kind of efficient OLED micro-display device, the OLED micro-display
Part include cathode, electron injecting layer EIL, electron transfer layer ELT, luminescent layer EML, hole transmission layer HTL, hole injection layer HIL,
Anode, thin-film encapsulation layer.
The anode is ITO material, and there is huge energy levels between traditional ITO electrode and hole transmission layer (HTL)
Difference causes the transmission in hole difficult, influences the luminous efficiency of device, so the present invention utilizes two kinds of organic acid (chlorobenzene acetic acids
And fluorophenylacetic acid) processing ITO electrode, the work function of treated ITO increases, and cavity transmission ability is improved, to improve
The luminescent properties of OLED.
The hole injection layer (HIL) is graphene oxide (GO), and existing research is proved using graphene oxide as hole
Transport layer can improve the luminous efficiency of OLED, equally be the transmission for promoting hole, so that carrier preferably reaches flat
Weighing apparatus, improves the luminous efficiency of OLED, research shows that the GO layer of 3.6nm thickness, so that the current efficiency highest of OLED device, OLED's
Luminous efficiency is best.
The thin-film encapsulation layer is compared to traditional glass using the laminated film of a kind of silicon nitride and silica
Or the encapsulation technologies such as metal, this composite membrane have better moisture protection, flexibility is also more preferable.
The high efficiency OLED micro-display device manufacturing process that this patent proposes is simple, low in cost and with higher
Luminous efficiency, stability greatly improve, while meeting thin-film package, so that the service life of OLED device also increases.
Detailed description of the invention
Fig. 1 is this patent structural schematic diagram;
The injection of 1. cathode, 2. electron injecting layer as shown in the figure, 3. electron transfer layer, 4. luminescent layer, 5. hole transmission layer, 6. hole
Layer 7. anode, 8. thin-film package.
Specific embodiment
Illustrate the contents of the present invention below in conjunction with specific embodiments.
Scheme the structural schematic diagram first is that a kind of efficient OLED micro-display device that this patent proposes.
As shown, OLED device includes cathode, electron injecting layer EIL, electron transfer layer ELT, luminescent layer EML, hole
Transport layer HTL, hole injection layer HIL, anode, thin-film encapsulation layer, firstly, the deposited metal cathode on cmos circuit, photoetching shape
At required pattern of pixels, electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer, hole injection is then successively deposited
Layer, anode.
One innovative point of this patent is that as hole injection layer, the note in hole is improved with this for selection graphene oxide
Enter rate, to improve the luminous efficiency of OLED device, the GO alcohol dispersion liquid of certain concentration is rotated with faster speed and is applied
It is put on ITO, and anneals 20 minutes under 100 degrees Celsius to remove excessive solvent, the GO layer of different-thickness is using different dense
The GO alcohol dispersion liquid of degree learns the GO layer of 3.6nm thickness, so that the current efficiency of OLED device is most in existing research
The luminous efficiency of height, OLED is best.
Traditional ito anode causes device light emitting efficiency to drop due to there is biggish energy very poor different between hole transmission layer
Low, the present invention handles ITO with two kinds of organic acids (chlorobenzene acetic acid and fluorophenylacetic acid), firstly, by ito glass substrate in warm water
Ultrasonic cleaning 20 minutes, is subsequently placed on warm table and heats, to remove moisture extra on ito glass substrate, by clean ITO
Glass substrate immerses in organic acid soln, and organic acid is chlorobenzene acetic acid and para-fluorophenylacetic acid, and concentration 0.05mol/L impregnates 30
After minute, one layer of molecular layer can be formed on the surface ITO, ITO substrate be cleaned repeatedly with dehydrated alcohol, finally by it in vacuum environment
Lower heat drying is increased using the ITO work function after modified with organic acids, improves the cavity transmission ability of OLED device, is improved
OLED device luminous efficiency.
OLED device is high for the sensitivity of moisture and oxygen, directly affects the service life of OLED device, the present invention
The silicon nitride of use and the laminated film of silica have very high moisture protection and flexibility, pass through chemical vapour deposition technique
The laminated film of deposited silicon nitride and silica in OLED device.
Claims (2)
1. a kind of efficient OLED micro-display device, which is characterized in that device includes: cathode, electron injecting layer EIL, electronics
Transport layer ELT, luminescent layer EML, hole transmission layer HTL, hole injection layer HIL, anode, thin-film encapsulation layer, wherein the hole
Implanted layer HIL is graphene oxide, promotes the charge velocity in hole.
2. efficient OLED micro-display device according to claim 1, it is characterised in that: used in the anode
Material is ITO, and is modified using two kinds of organic acids (chlorobenzene acetic acid and fluorophenylacetic acid) to ITO, so that itself and hole transport
Layer HTL is more affine.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110794018A (en) * | 2019-11-08 | 2020-02-14 | 福州京东方光电科技有限公司 | Biological sensing element, device and biosensor |
CN111081904A (en) * | 2019-12-02 | 2020-04-28 | 武汉华星光电半导体显示技术有限公司 | Preparation method of graphene oxide film, OLED device and preparation method |
CN111883693A (en) * | 2020-07-27 | 2020-11-03 | 湖北工业大学 | Perovskite light-emitting diode based on oxide hole injection layer and preparation method thereof |
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CN104183774A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting device and manufacturing method thereof |
CN106129263A (en) * | 2016-07-22 | 2016-11-16 | 深圳市华星光电技术有限公司 | OLED display device and preparation method thereof |
CN106960865A (en) * | 2017-05-04 | 2017-07-18 | 成都晶砂科技有限公司 | A kind of micro display OLED and manufacture method |
WO2019006793A1 (en) * | 2017-07-06 | 2019-01-10 | 深圳市华星光电技术有限公司 | White light oled device |
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2019
- 2019-03-11 CN CN201910178309.2A patent/CN109742254A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104183774A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting device and manufacturing method thereof |
CN106129263A (en) * | 2016-07-22 | 2016-11-16 | 深圳市华星光电技术有限公司 | OLED display device and preparation method thereof |
CN106960865A (en) * | 2017-05-04 | 2017-07-18 | 成都晶砂科技有限公司 | A kind of micro display OLED and manufacture method |
WO2019006793A1 (en) * | 2017-07-06 | 2019-01-10 | 深圳市华星光电技术有限公司 | White light oled device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110794018A (en) * | 2019-11-08 | 2020-02-14 | 福州京东方光电科技有限公司 | Biological sensing element, device and biosensor |
CN111081904A (en) * | 2019-12-02 | 2020-04-28 | 武汉华星光电半导体显示技术有限公司 | Preparation method of graphene oxide film, OLED device and preparation method |
CN111883693A (en) * | 2020-07-27 | 2020-11-03 | 湖北工业大学 | Perovskite light-emitting diode based on oxide hole injection layer and preparation method thereof |
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