CN109742174B - Sub-terahertz wave detector with adjustable conductive characteristic - Google Patents
Sub-terahertz wave detector with adjustable conductive characteristic Download PDFInfo
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- CN109742174B CN109742174B CN201910021821.6A CN201910021821A CN109742174B CN 109742174 B CN109742174 B CN 109742174B CN 201910021821 A CN201910021821 A CN 201910021821A CN 109742174 B CN109742174 B CN 109742174B
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Abstract
The invention relates to a sub-terahertz wave detector with adjustable conductive property, which comprises a substrate layer, wherein lead electrodes and a logarithmic period antenna are arranged above the substrate layer at intervals, two arms of the logarithmic period antenna are respectively and electrically connected with the corresponding lead electrodes, an adjusting sheet is arranged between the two arms of the logarithmic period antenna, the two arms of the logarithmic period antenna form a conductive channel through a graphene conductive layer, and the graphene conductive layer is arranged above the adjusting sheet; a dielectric layer is arranged above the log periodic antenna, and a split grid and a lead electrode electrically connected with the split grid are arranged on the dielectric layer; this inferior terahertz wave detector of conductive characteristic adjustable sets up the adjustment sheet through the below at graphite alkene conducting layer, because the adjustment sheet has the characteristic that heat sensitive characteristic or charge distribution are uneven for the current carrier concentration of graphite alkene conducting layer changes, thereby has improved the sensitivity of surveying the light wave, has improved the sensitivity of inferior terahertz wave detector.
Description
Technical Field
The invention belongs to the technical field of sub-terahertz wave detection, and particularly relates to a sub-terahertz wave detector with adjustable conductive characteristics.
Background
The terahertz wave is an electromagnetic wave having a frequency in the range of 0.1 to 10THz (1THz is 1012Hz), has a wavelength in the range of 3mm to 30 μm, and is located between the millimeter wave (submillimeter wave) and the infrared wave. The corresponding energy range of the terahertz photons is 0.414-41.4 meV, and the terahertz photons are matched with the low-frequency vibration and rotation energy ranges of molecules and materials. The characteristics and the application of the terahertz waves which determine the special positions of the terahertz waves in the electromagnetic spectrum and are obviously different from those of millimeter waves and infrared rays in the aspects of transmission, scattering, reflection, absorption, penetration and the like also provide a large free space for the characterization and the control of people on substances.
Terahertz waves have many unique properties such as broadband, perspective, safety and the like, and have important application prospects in the basic fields of physics, chemistry, biomedicine and the like, and in the aspects of anti-terrorism, nondestructive imaging, spectral analysis and radar communication: (1) the application of terahertz waves in biomedicine is very attractive. The compound has strong functions and effects in the aspects of diagnosis and treatment of skin cancer, terahertz wave tomography, analysis and detection of medicines and the like. Because the vibration and the rotation frequency of biomacromolecules are in the terahertz wave band, and the terahertz wave radiation technology can extract important information of DNA, the terahertz wave can play an important role in the aspects of plant, particularly grain seed selection, excellent strain selection and the like. (2) Terahertz wave radiation can penetrate smoke and can detect toxic or harmful molecules, so that the terahertz wave radiation can play an important role in environmental monitoring and protection. Terahertz waves have strong penetrating power to a plurality of non-metal and non-polar dielectric materials, including materials such as clothes, packages, ceramic products and even walls, and can realize non-contact detection of hidden explosives carried in the materials. Compared with other technologies, the terahertz real-time detection means has different characteristic absorption and dispersion in different explosive types in terahertz wave bands and has fingerprint spectrum. The terahertz technology is utilized to detect and identify the terahertz technology, and then the internal structure information of the substance is analyzed. (3) The terahertz wave has lower energy, only several milli-electron volts, does not cause ionization injury to human bodies and does not harm human health, so that explosives hidden in the packaging materials can be conveniently detected, and the safety of detection personnel and equipment is greatly guaranteed. Meanwhile, the terahertz wave has great potential in radar and communication, detection of possible faults of space shuttles, astronomy and other aspects.
The patent application with the application number of 201610894003.3 provides a sub-terahertz wave detector with adjustable room temperature and a preparation method thereof, the sub-terahertz wave detector with adjustable room temperature mainly comprises a substrate, a log periodic antenna and a lead electrode are integrated on the substrate, and two arms of the log periodic antenna are respectively connected with the corresponding lead electrodes; a graphene conducting channel with high mobility and adjustable carrier concentration is arranged between the two arms of the log periodic antenna, and the graphene conducting channel is interconnected with the two arms of the log periodic antenna to form good ohmic contact; an aluminum oxide gate dielectric layer is arranged on the graphene conductive channel; and integrating a split grid and a corresponding lead electrode on an alumina grid dielectric layer of the graphene conductive channel. In practical application, the problem that the carrier activity of graphene of the sub-terahertz wave detector is limited due to the fact that the sensitivity defect of the sub-terahertz wave detector still exists and the heat absorption of a graphene conductive channel is limited is found.
Disclosure of Invention
Aiming at the problems, the invention aims to solve the problem that the current sub-terahertz wave detector has sensitivity defects and influences the carrier efficiency of a graphene electric channel.
Therefore, the invention provides a sub-terahertz wave detector with adjustable conductive property, which comprises a substrate layer, wherein lead electrodes and a logarithmic period antenna are arranged above the substrate layer at intervals, two arms of the logarithmic period antenna are respectively and electrically connected with the corresponding lead electrodes, an adjusting sheet is arranged between the two arms of the logarithmic period antenna, the two arms of the logarithmic period antenna form a conductive channel through a graphene conductive layer, and the graphene conductive layer is arranged above the adjusting sheet; a dielectric layer is arranged above the log periodic antenna, and a split grid and a lead electrode electrically connected with the split grid are arranged on the dielectric layer.
The adjusting sheet is provided with a plurality of adjusting sheets which are arranged between two arms of the log periodic antenna at intervals.
The plurality of adjustment tabs are of different sizes.
The thickness of the two ends of the adjusting sheet is different.
The adjusting sheet is made of a metal material.
The regulating sheet is made of a thermoelectric material.
The invention has the beneficial effects that: the sub-terahertz wave detector with the adjustable conductive property solves the problems that the conventional sub-terahertz wave detector has sensitivity defects and affects the carrier efficiency of a graphene electric channel, and the adjusting sheet is arranged below a graphene conductive layer, so that the carrier concentration of the graphene conductive layer is changed due to the fact that the adjusting sheet has the thermosensitive property or the property of uneven charge distribution, the sensitivity of the graphene conductive layer is improved, the sensitivity of detecting light waves is improved, and the sensitivity of the sub-terahertz wave detector is improved.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
FIG. 1 is a first schematic structural diagram of a sub-terahertz wave detector with adjustable conducting property.
FIG. 2 is a second structural diagram of a sub-terahertz wave detector with adjustable conductive characteristics.
Fig. 3 is a schematic structural diagram three of a sub-terahertz wave detector with adjustable conductive characteristics.
In the figure: 1. a substrate layer; 2. a lead electrode; 3. a log periodic antenna; 4. a dielectric layer; 5. splitting the grid; 6. a graphene conductive layer; 7. and a regulating sheet.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The problem that the current sub-terahertz wave detector has sensitivity defects and influences the carrier efficiency of a graphene electric channel is solved. The embodiment provides a sub-terahertz wave detector with adjustable conductive characteristics as shown in fig. 1, which comprises a substrate layer 1, wherein lead electrodes 2 and a logarithmic period antenna 3 which are spaced from each other are arranged above the substrate layer 1, two arms of the logarithmic period antenna 3 are respectively and electrically connected with the corresponding lead electrodes 2, an adjusting sheet 7 is arranged between the two arms of the logarithmic period antenna 3, two arms of the logarithmic period antenna 3 form a conductive channel through a graphene conductive layer 6, and the graphene conductive layer 6 is arranged above the adjusting sheet 7; a dielectric layer 4 is arranged above the log periodic antenna 3, and a split grid 5 and a lead electrode 2 electrically connected with the split grid 5 are arranged on the dielectric layer 4; just so can adjust graphite alkene conducting layer 6 through adjustment sheet 7 for the carrier concentration of graphite alkene conducting layer 6 changes, thereby makes graphite alkene conducting layer 6's sensitivity improve, has improved the sensitivity of surveying the light wave, has improved the sensitivity of inferior terahertz wave detector.
When the adjusting tab 7 is made by metal material, for example when gold or silver or copper etc. support, give metal material heating, can lead to adjusting tab 7 to take place deformation bending for 7 both ends perk of adjusting tab, the heat is more, and 7 both ends perk range of adjusting tab is big more, can make graphite alkene conducting layer 6 take place deformation equally like this, from the conductive characteristic who changes graphite alkene conducting layer 6, strengthens the sensitivity of inferior terahertz wave detector.
Further, as shown in fig. 2, the adjusting sheet 7 is provided in plurality and arranged between two arms of the log periodic antenna 3 at intervals, so that the deformation amplitude of the adjusting sheet 7 can be shared, a part of the graphene conductive layer 6 between the two arms of the log periodic antenna 3 can be uniformly deformed, damage to devices is reduced, and a certain protection effect is achieved.
Further, the sizes of the adjusting sheets 7 are different, so that the deformation amplitude of the adjusting sheets 7 can be further shared, the part of the graphene conducting layer 6 between the two arms of the log periodic antenna 3 can be uniformly deformed, damage to devices is reduced, and a certain protection effect is achieved
Further, the thicknesses of two ends of the adjusting sheet 7 are different; can set to as the height that fig. 3 shows, the adjustment sheet 7 one end that is located the middle part department in the space between two arms of log periodic antenna 3 is higher, the adjustment sheet 7 other end in the edge in the space between two arms of log periodic antenna 3 is higher, can share the deformation range of adjustment sheet 7 equally, make the emergence deformation that the part graphite alkene conducting layer 6 that is located between two arms of log periodic antenna 3 can be even, reduce the damage to the device, thereby play certain guard action.
When the adjusting sheet 7 is made of a thermoelectric material, such as a silicon-germanium alloy or bismuth telluride, for supporting, charges are accumulated at two ends of the thermoelectric material at different temperatures, so that an electric field is formed, the electric field changes the carrier distribution inside the graphene conductive layer 6, and the sensitivity of the terahertz wave detector is enhanced by changing the conductive characteristic of the graphene conductive layer 6.
Furthermore, the adjusting sheets 7 are arranged in plurality and are arranged between two arms of the log periodic antenna 3 at intervals, so that the electric field of the adjusting sheets 7 can be adjusted, carriers in a part of the graphene conducting layer 6 between the two arms of the log periodic antenna 3 can be distributed and changed more evenly, the carrier distribution in graphene is adjusted, the conducting property of graphene is changed, and the sensitivity of system measurement is enhanced.
Furthermore, the arrangement direction of the adjusting sheets 7 can be changed, so that the direction of an electric field formed by the adjusting sheets 7 is changed, the directional concentration of the current carrier distribution in the partial graphene conducting layer 6 between the two arms of the log periodic antenna 3 is adjusted, the current carrier distribution in the graphene is regulated, the conducting property of the graphene is changed, and the sensitivity of system measurement is enhanced.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (4)
1. A sub-terahertz wave detector with adjustable conducting property comprises a substrate layer (1), and is characterized in that: lead electrodes (2) and logarithmic period antennas (3) which are spaced from each other are arranged above the substrate layer (1), two arms of each logarithmic period antenna (3) are electrically connected with the corresponding lead electrodes (2) respectively, an adjusting sheet (7) is arranged between the two arms of each logarithmic period antenna (3), the two arms of each logarithmic period antenna (3) form a conductive channel through a graphene conductive layer (6), and the graphene conductive layer (6) is arranged above the adjusting sheet (7); a dielectric layer (4) is arranged above the log periodic antenna (3), a split grid (5) and a lead electrode (2) electrically connected with the split grid (5) are arranged on the dielectric layer (4);
wherein, adjustment flap (7) are the lamellar body of metal material, adjustment flap (7) are heated deformation and are crooked to make graphite alkene conducting layer (6) take place deformation through adjustment flap (7), in order to change the conductive characteristic of graphite alkene conducting layer (6).
2. The sub-terahertz wave detector with adjustable conductive characteristics of claim 1, wherein: the adjusting sheets (7) are arranged in a plurality and are arranged between two arms of the log periodic antenna (3) at intervals.
3. The sub-terahertz wave detector with adjustable conducting characteristics of claim 2, wherein: the adjusting sheets (7) are different in size.
4. The sub-terahertz wave detector with adjustable conductive characteristics of claim 1, wherein: the thicknesses of the two ends of the adjusting sheet (7) are different.
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| JP2007248141A (en) * | 2006-03-14 | 2007-09-27 | Toshiba Corp | Light receiving element and optical wire lsi |
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| CN103776790A (en) * | 2014-02-25 | 2014-05-07 | 重庆大学 | Infrared spectrum enhancement and detection method and infrared spectrum enhancement and detection device based on graphene nano antenna |
| CN103855228A (en) * | 2014-02-21 | 2014-06-11 | 上海大学 | Terahertz detector based on optical antenna |
| CN106374006A (en) * | 2016-10-13 | 2017-02-01 | 中国科学院上海技术物理研究所 | Room-temperature adjustable sub-Terahertz wave detector and preparation method |
| CN106952981A (en) * | 2017-03-22 | 2017-07-14 | 电子科技大学 | A kind of broadband panel detector structure based on graphene and preparation method thereof |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007248141A (en) * | 2006-03-14 | 2007-09-27 | Toshiba Corp | Light receiving element and optical wire lsi |
| CN103487953A (en) * | 2013-08-20 | 2014-01-01 | 中国工程物理研究院流体物理研究所 | All-optically controlled terahertz intensity modulator and terahertz intensity modulator |
| CN103855228A (en) * | 2014-02-21 | 2014-06-11 | 上海大学 | Terahertz detector based on optical antenna |
| CN103776790A (en) * | 2014-02-25 | 2014-05-07 | 重庆大学 | Infrared spectrum enhancement and detection method and infrared spectrum enhancement and detection device based on graphene nano antenna |
| CN106374006A (en) * | 2016-10-13 | 2017-02-01 | 中国科学院上海技术物理研究所 | Room-temperature adjustable sub-Terahertz wave detector and preparation method |
| CN106952981A (en) * | 2017-03-22 | 2017-07-14 | 电子科技大学 | A kind of broadband panel detector structure based on graphene and preparation method thereof |
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Effective date of registration: 20201014 Address after: 317016 No. 149 Duxi Road, Duqiao Town, Linhai City, Taizhou City, Zhejiang Province Applicant after: Lv Zhichao Address before: 322200 Dongshan Road, Xianhua Street, Pujiang County, Jinhua City, Zhejiang Province, 488 Applicant before: JINHUA FUAN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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