CN109739067A - A kind of metallic mold for nano-imprint and preparation method thereof and nano-imprinting method - Google Patents
A kind of metallic mold for nano-imprint and preparation method thereof and nano-imprinting method Download PDFInfo
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- CN109739067A CN109739067A CN201910225594.9A CN201910225594A CN109739067A CN 109739067 A CN109739067 A CN 109739067A CN 201910225594 A CN201910225594 A CN 201910225594A CN 109739067 A CN109739067 A CN 109739067A
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Abstract
The invention discloses a kind of metallic mold for nano-imprint and preparation method thereof and nano-imprinting method, it is used for so that promoting the dry etching uniformity of subsequent technique without residue glue retention after metallic mold for nano-imprint demoulding.Metallic mold for nano-imprint therein, comprising: support substrate；Embossed layer has a bulge-structure corresponding with preset pattern away from the one side of the supporting substrate on the embossed layer, and the corresponding region of the bulge-structure is absorbance region, forms transmission region between adjacent bulge-structure.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of metallic mold for nano-imprint and preparation method thereof and nanometer pressure
Impression method.
Background technique
Nanometer embossing (NIL) is directly squeezed using Mechanical Contact as a kind of, makes to be stamped material in template and base
The method redistributed between bottom, with high-resolution (< 10nm), simple process, at low cost, yield is high, can give birth on a large scale
The advantages that production, becomes the next-generation light section technology of most prospect, has a wide range of applications in fields such as display, semiconductors.
Mostly use ultraviolet nanometer imprint process at present, i.e., the coating coining glue on underlay substrate, by metallic mold for nano-imprint and
After the completion of underlay substrate alignment, metallic mold for nano-imprint is pressed into coining glue-line and irradiating ultraviolet light keeps coining glue generation polymerization anti-
Forming should be hardened.In ultraviolet nanometer imprint process, because of situations such as may result in coining glue unbalance stress when coining, often
It will lead to coining glue surface irregularity, that is, there are the non-uniform phenomenons of residue glue after demoulding.
For this purpose, generally use hard exposure mask hardmask arrange in pairs or groups secondary dry etching mode come improve residue glue it is uneven caused by
Dry etching is bad, increases the preparation process of hard mask layer and the technique of secondary dry etching, to increase the complexity of technique.
Summary of the invention
The embodiment of the present application provides a kind of metallic mold for nano-imprint and preparation method thereof and nano-imprinting method, for so that receiving
It is retained after rice imprint mold demoulding without residue glue, promotes the dry etching uniformity of subsequent technique.
In a first aspect, the embodiment of the present application provides a kind of metallic mold for nano-imprint, which includes:
Support substrate；
Embossed layer has protrusion knot corresponding with preset pattern away from the one side of the supporting substrate on the embossed layer
Structure, the corresponding region of the bulge-structure are absorbance region, form transmission region between adjacent bulge-structure.
There is protrusion knot corresponding with preset pattern on the embossed layer of metallic mold for nano-imprint provided by the embodiments of the present application
Structure, the corresponding region of the bulge-structure are absorbance region, form transmission region between adjacent bulge-structure.When using the nanometer
When imprint mold imprints substrate, light makes the coining adhesive curing on substrate through transmission region；And bulge-structure absorbs light,
To which the light through absorbance region is less, then coining glue corresponding with absorbance region would not be cured, it is to be imprinted in this way
After imprinting glue, uncured coining glue on substrate directly can be dissolved by solvent, to exist after avoiding substrate demoulding as far as possible
The non-uniform phenomenon of residue glue.
In a kind of possible embodiment, the support substrate is an integral molding structure with the embossed layer, and described one
Forming structure is made up of light absorbent；
Wherein, the light transmittance of the support substrate is greater than or equal to 50%.
In the embodiment of the present application, support substrate and embossed layer can be integrated formed structure, to simplify production coining as far as possible
The technique of layer.
In a kind of possible embodiment, the support substrate is light-transparent substrate, and the embossed layer uses light absorbent
It is made.
In the embodiment of the present application, support substrate can be light-transparent substrate, and embossed layer is made of light absorbent, be located in this way
The light absorbent of transmission region between the adjacent bulge-structure of embossed layer is less, even without light absorbent, to mention as far as possible
High light line penetrates the transmitance of transmission region, improves the curing efficiency of coining glue.
In a kind of possible embodiment, the embossed layer includes:
Positioned at the structure sheaf of the one side away from the support substrate, wherein the structure sheaf has and the bulge-structure
Corresponding shading piece, the shading piece overlap in the orthographic projection of the support substrate with the absorbance region；
In the structure sheaf between adjacent shading piece, and it is located at the structure sheaf far from the support substrate one
The planarization layer of side；
Positioned at the planarization layer far from the support substrate side, and the bulge-structure layer with the bulge-structure.
In a kind of possible embodiment, the shading piece is black matrix, alternatively, the shading piece is by light absorbent system
At.
The embodiment of the present application can use setting shading piece corresponding with bulge-structure position and realize bulge-structure
Interception, the shading piece can be black matrix or light absorbent, more flexibly, while improve light through transmission region
Transmitance, improve coining glue curing efficiency.
Second aspect, the embodiment of the present application provide a kind of production method of metallic mold for nano-imprint, this method comprises:
Support substrate is provided, and forms embossed layer in the one side of the supporting substrate；
Wherein, the embossed layer has bulge-structure corresponding with preset pattern, the corresponding region of the bulge-structure
For absorbance region, transmission region is formed between adjacent bulge-structure.
In a kind of possible embodiment, support substrate is provided, and form embossed layer in the one side of the support substrate,
Include:
One layer of light shield layer is deposited on template vector, wherein the light shield layer is made of light absorbent；
The part light shield layer for being located at the transmission region is performed etching, the integrally formed support substrate and institute are formed
State embossed layer.
In a kind of possible embodiment, support substrate is provided, and form embossed layer in the one side of the support substrate,
Include:
One layer of photic zone is deposited on template vector, forms the support substrate；
One layer of light shield layer is deposited in the one side of the support substrate, wherein the light shield layer is made of light absorbent；
The part light shield layer for being located at the transmission region is performed etching, the embossed layer is formed.
In a kind of possible embodiment, embossed layer is formed in the one side of the supporting substrate, comprising:
One layer of structure sheaf is deposited in the one side away from the support substrate, wherein the structure sheaf has multiple shading pieces；
Between shading piece adjacent in the structure sheaf and the structure sheaf is deposited far from the support substrate side
One layer of planarization layer；
In the planarization layer far from one lamination glue-line of support substrate side deposition；
The moulding layer is performed etching, being formed has bulge-structure corresponding with preset pattern, the bulge-structure
Corresponding region is absorbance region, and transmission region, and the absorbance region and the shading are formed between adjacent bulge-structure
Part overlaps in the orthographic projection of the support substrate, forms the embossed layer.
The third aspect, the embodiment of the present application provide a kind of nano-imprinting method, this method comprises:
Using such as the described in any item metallic mold for nano-imprint of first aspect and the substrate contraposition for being coated with nano impression glue-line；
The metallic mold for nano-imprint is pressed into the nano impression glue-line；
In metallic mold for nano-imprint side irradiating ultraviolet light, the institute positioned at the transparent area is solidified by the ultraviolet light
State nano impression glue-line；
Part nano impression glue-line uncured in the nano impression glue-line on the substrate is dissolved by solvent, is formed
The preset pattern.
Detailed description of the invention
Fig. 1 is the schematic diagram for the residue glue non-uniform phenomenon that the prior art provides；
Fig. 2 is a kind of structural schematic diagram of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 3 is a kind of structural schematic diagram of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 4 is a kind of structural schematic diagram of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 5 is a kind of structural schematic diagram of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 6 is the flow diagram of the production method of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 7 is corresponding a kind of structural schematic diagram in the manufacturing process of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 8 is corresponding a kind of structural schematic diagram in the manufacturing process of metallic mold for nano-imprint provided by the embodiments of the present application；
Fig. 9 is the flow diagram of nano-imprinting method provided by the embodiments of the present application；
Figure 10-Figure 11 is respectively corresponding structural schematic diagram in nanoimprinting process shown in the embodiment of the present application；
Figure 12 is corresponding structural schematic diagram in nanoimprinting process shown in the prior art；
Figure 13 is corresponding structural schematic diagram in nanoimprinting process shown in the embodiment of the present application.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction in the embodiment of the present application
Attached drawing, the technical scheme in the embodiment of the application is clearly and completely described.
At present in ultraviolet nanometer imprint process, because of situations such as may result in coining glue unbalance stress, warp when coining
It often will lead to coining glue surface irregularity, that is, there are the non-uniform phenomenons of residue glue after demoulding, this will increase the subsequent quarter to substrate
The difficulty of etching technique, the structure height after eventually leading to etching occur unevenly, influencing the performance of device.
In consideration of it, the embodiment of the invention provides a kind of new metallic mold for nano-imprint, the embossed layer of the metallic mold for nano-imprint
Upper to have bulge-structure corresponding with preset pattern, the corresponding region of the bulge-structure is absorbance region, adjacent protrusion knot
Transmission region is formed between structure.When using metallic mold for nano-imprint coining substrate, light makes on substrate through transmission region
Coining adhesive curing；And bulge-structure absorbs light, so that the light through absorbance region is less, then corresponding with absorbance region
Coining glue would not be cured, after coining glue to be imprinted in this way, can directly by solvent dissolve substrate on it is uncured
Imprint glue, with avoid as far as possible substrate demould after there are the non-uniform phenomenons of residue glue.
With reference to the accompanying drawing, to metallic mold for nano-imprint provided in an embodiment of the present invention and preparation method thereof and nano impression side
The specific embodiment of method is described in detail.The thickness of each film layer and shape do not reflect actual proportions in attached drawing, and purpose is only
It is schematically illustrate the content of present invention.
Fig. 2, a kind of metallic mold for nano-imprint provided in an embodiment of the present invention are referred to, which includes branch support group
Bottom 10 and embossed layer 20, wherein there is protrusion knot corresponding with preset pattern away from the one side of support substrate 10 on embossed layer
Structure 201, the corresponding region of bulge-structure 201 are absorbance region A, form transmission region B between adjacent bulge-structure 201.Fig. 1
In when using metallic mold for nano-imprint coining substrate, light makes the coining adhesive curing on substrate through transmission region B, still
Light is absorbed by bulge-structure 201, then coining glue corresponding with absorbance region A would not be cured, coining to be imprinted in this way
After glue, uncured coining glue on substrate directly can be dissolved by solvent, with there are residue glues after avoiding substrate to demould as far as possible
Non-uniform phenomenon.
Above-mentioned embossed layer 20 provided by the embodiments of the present application may include following several implementations in the specific implementation:
The first implementation:
Fig. 3 is referred to, integrated formed structure can be made using light absorbent in support substrate 10 and embossed layer 20, with as far as possible
The technique for simplifying production embossed layer.Light absorbent can be 2- (- 5 ˊ of 2 ˊ-hydroxyl-aminomethyl phenyl) benzotriazole, 2- (2 '-hydroxyls
Base -3 ', 5 '-two tertiary phenyl) -5- chlorination benzotriazole etc. or other possible materials.
The light absorbent of various dose will lead to the light transmittance of light also all differences.So in the embodiment of the present application, extinction
The dosage of material can be specifically arranged according to the light transmittance of light.In a kind of possible embodiment, support substrate 10 is along nanometer
The thickness of imprint mold is less than embossed layer 20 along the thickness of metallic mold for nano-imprint, that is, the light absorbent that support substrate 10 uses
Less than light absorbent used in embossed layer 20, with make as far as possible embossed layer 20 bulge-structure 201 light transmittance as far as possible
It is small, and the light transmittance of the transmission region of support substrate 10 is larger.For example, the light transmittance of the transmission region of support substrate 10 be greater than or
Equal to 50%, the light transmittance of the bulge-structure 201 of embossed layer 20 is less than or equal to 0.1%.
Second of implementation:
Fig. 4 is referred to, support substrate 10 can be light-transparent substrate, that is, guarantee 100% light transmittance, embossed layer as far as possible
20 can be made of light absorbent, in this way the suction of the transmission region between the adjacent bulge-structure 201 of embossed layer 20
Luminescent material is just less as far as possible, to improve the light transmittance of the transmission region of metallic mold for nano-imprint.
Alternatively, multiple bulge-structures 201 are made using light absorbent, form embossed layer 20 in the one side of support substrate 10,
Light absorbent is not present in transmission region in this way between the adjacent bulge-structure 201 of embossed layer 20, so that nanometer
The light transmittance of the transmission region of imprint mold can achieve 100%, improve the coining efficiency of metallic mold for nano-imprint.Wherein, Fig. 4
By the transmission region between the adjacent bulge-structure 201 for being located at embossed layer 20, there is no for light absorbent.
The third implementation:
Fig. 5 is referred to, support substrate 10 can be light-transparent substrate, and embossed layer 20 may include being located at away from support substrate 10
One side structure sheaf 30, wherein structure sheaf 30 has shading piece 301 corresponding with bulge-structure 201, and shading piece 301 exists
The orthographic projection of support substrate 10 overlaps with absorbance region；Embossed layer 20 further includes adjacent shading piece in structure sheaf 30
Between 301, and the planarization layer 40 positioned at structure sheaf 30 far from 10 side of support substrate, and including being located at planarization layer 40
Far from 10 side of support substrate, and the bulge-structure layer 50 with bulge-structure 201.
Wherein, shading piece 301 can be black matrix or be made of light absorbent.I.e. the embodiment of the present application, which can use, sets
The interception that shading piece 301 corresponding with 201 position of bulge-structure realizes bulge-structure 201 is set, more flexibly.And it props up
Support group bottom 10 is light-transparent substrate, and planarization layer 40 is also possible to translucent material and is made, and bulge-structure layer 50 can pass through extinction material
Material is made, alternatively, bulge-structure layer 50 can also be made up of translucent material, that is, bulge-structure 201 can be extinction,
It is also possible to light transmission, i.e., under this implementation, with no restriction to the making material of bulge-structure 201, is easy to make.When convex
Structure sheaf 50 is played to be made of translucent material, then the light transmittance of the transmission region of metallic mold for nano-imprint as close as
100%, such as can achieve 90%, it is seen then that this implementation can also improve the transmission that line penetrates transmission region simultaneously
Rate improves the curing efficiency of coining glue.
Based on the same inventive concept, the embodiment of the invention also provides a kind of production method of above-mentioned metallic mold for nano-imprint,
As shown in fig. 6, the production method the following steps are included:
S601, support substrate is provided；
S602, the one side formation embossed layer in supporting substrate；Wherein, embossed layer has protrusion corresponding with preset pattern
Structure, the corresponding region of bulge-structure are absorbance region, form transmission region between adjacent bulge-structure.
It should be noted that step S601 and step S602 not successive limitation, can be step 601 and step 602
It carries out simultaneously, is also possible to first carry out step S601, then carry out step S602.
Specifically, for making metallic mold for nano-imprint as shown in Figure 3, firstly, the embodiment of the present application can first prepare
Light absorbent deposits one layer of light shield layer on template vector, that is, one layer of light absorbent of deposition forms light shield layer.Again to being located at
Metallic mold for nano-imprint the part light shield layer of transmission region to be formed perform etching, form integrally formed 10 He of support substrate
Embossed layer 20.Under this production method, step S601 and step S602 are exactly to carry out simultaneously.
Specifically, for making metallic mold for nano-imprint as shown in Figure 4, firstly, the embodiment of the present application can be in template
One layer of photic zone is deposited using translucent material on carrier, forms support substrate 10.One layer is deposited in the one side of support substrate 10 again
Light absorbent, formed light shield layer, later to be located at metallic mold for nano-imprint institute transmission region to be formed part light shield layer progress
Etching forms embossed layer 20.It is exactly first to carry out step S601, then carry out step S602 under this production method.
Specifically, for making metallic mold for nano-imprint as shown in Figure 5, the support substrate of light transmission can be made first
10, then embossed layer 20 is formed in support substrate 10.
In a kind of possible embodiment, transparent material, such as poly terephthalic acid class can choose
(Polyethylene terephthalate, PET) makes support substrate 10.For example, being located at using PET production thickness
Support substrate 10 within the scope of 0.5um~0.5mm.Structure sheaf 30 is formed in the one side away from support substrate 10 later, for example, adopting
One layer of light shield layer is deposited in the one side away from support substrate 10 with the mode of coating, such as deposition a layer thickness can be located at 5um
Black matrix or light absorbent within the scope of~20um, then by semiconductor exposure, development, formed corresponding with pre-set image convex
The corresponding shading piece 301 of structure 201 is played, to form structure sheaf 30.Wherein, the corresponding shading of a bulge-structure 201
Part 301.Obtain structure as shown in Figure 7.
And then between shading piece 301 adjacent in structure sheaf 30 and structure sheaf 30 is far from 10 side of support substrate
Deposit one layer of planarization layer 40.For example, between the adjacent shading piece 301 in structure sheaf 30 and structure sheaf 30 far from branch
10 side of support group bottom applies the mixture that a layer thickness is located within the scope of 1um~0.5mm, to form planarization layer 40, obtain as
Structure shown in Fig. 8.In a kind of possible embodiment, dimethyl silicone polymer may include in the mixture
(polydimethylsiloxane, PDMS) matrix and curing agent.There is higher elasticity due to PDMS and preferably light penetrates
Property, so the planarization layer 40 can be used as Buffer layers.The mode of coating in the embodiment of the present application can be such as under type
In any one: spin coating/slit/slot die mode.
After making planarization layer 40, it is laminated glue-line far from 10 side of support substrate deposition one in planarization layer 40, then right
Moulding layer performs etching, and being formed has bulge-structure 201 corresponding with preset pattern, and the corresponding region of bulge-structure 201 is
Absorbance region forms transmission region between adjacent bulge-structure 201, and absorbance region and shading piece 301 are in support substrate 10
Orthographic projection overlap, formed bulge-structure layer 50.
Specifically, a layer thickness is applied far from the surface of support substrate 10 in planarization layer 40 to be located within the scope of 3um~4um
Coining glue.Coating method can be the accurate gluing mode of Spin Coating, Slit, IJP or Slot die.Imprinting glue can
With comprising monomer resin, prepolymer, photoinitiator and other additives, monomer resin can be acrylic resin, epoxy
Resin etc..Coining glue is imprinted using caster exactitude position later, exposed, is demoulded, being formed has bulge-structure 20
Bulge-structure layer 50, obtain structure as shown in Figure 5.
Based on the same inventive concept, the embodiment of the invention also provides a kind of nano impression sides using metallic mold for nano-imprint
Method, as shown in figure 9, in conjunction with Fig. 2-Fig. 8 and Figure 10-Figure 13, the method for stamping the following steps are included:
S901, it is aligned using above-mentioned metallic mold for nano-imprint with the substrate for being coated with nano impression glue-line；
S902, metallic mold for nano-imprint is pressed into nano impression glue-line；
S903, in metallic mold for nano-imprint side irradiating ultraviolet light, the nanometer pressure positioned at transmission region is solidified by ultraviolet light
Print glue-line；
S904, part nano impression glue-line uncured in the nano impression glue-line on substrate, shape are dissolved by solvent
At preset pattern.
The embodiment of the present invention is in the ultraviolet nanometer coining using metallic mold for nano-imprint, first using as shown in Figure 3 or Figure 4
Metallic mold for nano-imprint and coated with nano coining glue-line 100 substrate 60 align, then by metallic mold for nano-imprint be pressed into nanometer pressure
Glue-line 100 is printed, as shown in Figure 10, then in metallic mold for nano-imprint side irradiating ultraviolet light, curing nano imprints glue-line 100, such as schemes
Shown in 10.Wherein.Figure 10 further illustrates the mould carrier 200 of metallic mold for nano-imprint and the substrate carrier 300 of substrate 60, arrow
Illustrate ultraviolet light direction in head direction.After curing nano imprints glue-line 100, demoulding processing is carried out to substrate 60, is finally led to
Nano impression glue-line 100 uncured on solvent dissolution substrate 60 is crossed, structure as shown in figure 11 is obtained.Wherein, Tu11Zhong
Arrow direction signal solvent clean direction.When imprinting substrate 30 using the metallic mold for nano-imprint, ultraviolet light can only penetrate light transmission
Region B, and lightproof area A forbids the transmitance of UV light permeability or ultraviolet light lower, thus coining corresponding with lightproof area A
Glue would not be solidified by ultraviolet light, after solidification to be imprinted in this way, can directly be dissolved by solvent uncured on substrate 30
Imprint glue, with avoid as far as possible substrate 30 demould after there are the non-uniform phenomenons of residue glue.
Referring to Figure 12, the process schematic that the metallic mold for nano-imprint to be provided using the prior art is imprinted, from figure
As can be seen that being imprinted using the metallic mold for nano-imprint that the prior art provides in 12, after demoulding, there are residue glue unevenness for substrate 30
Even phenomenon, so caused by needing to improve in such a way that hard exposure mask hardmask arranges in pairs or groups secondary dry etching residue glue unevenly
Dry etching is bad.Therefore, Tu12Zhong, nano impression glue-line 100 needs to be arranged hardmask layer 70 far from the side of substrate 60, with right
Residue glue on nano impression glue-line 100 carries out dry etching, and the process is more complicated.Wherein, shape when Figure 12 arrow direction is followed successively by coining
State after state and hardmask dry etching after state, demoulding.
Nanoimprinting process is introduced for structure shown in fig. 5 by the metallic mold for nano-imprint used again below.
Referring to Figure 13, after the substrate 60 of metallic mold for nano-imprint and coated with nano coining glue-line 100 aligns, then it will receive
Rice imprint mold is pressed into nano impression glue-line 100, then in metallic mold for nano-imprint side irradiating ultraviolet light, curing nano imprints glue-line
100.Curing nano imprint glue-line 100 after, demoulding processing is carried out to substrate 60, finally by solvent dissolution substrate 60 on not by
Cured nano impression glue-line 100, obtains desired structure.Wherein.Arrow direction successively illustrates alignment, illumination in Figure 13
State after state and residue glue clean after state, demoulding.
To sum up, when metallic mold for nano-imprint coining substrate provided by the embodiments of the present application, light makes base through transmission region
Coining adhesive curing on plate, and bulge-structure absorbs light, so that the light through absorbance region is less, then with absorbance region
Corresponding coining glue would not be cured, and after coining glue to be imprinted in this way, can directly be dissolved by solvent and not consolidated on substrate
The coining glue of change, with avoid as far as possible substrate demould after there are the non-uniform phenomenons of residue glue.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of metallic mold for nano-imprint characterized by comprising
Support substrate；
Embossed layer has bulge-structure corresponding with preset pattern away from the one side of the supporting substrate on the embossed layer,
The corresponding region of the bulge-structure is absorbance region, forms transmission region between adjacent bulge-structure.
2. metallic mold for nano-imprint as described in claim 1, which is characterized in that the support substrate is integrated with the embossed layer
Molding structure, the integrated formed structure are made up of light absorbent；
Wherein, the light transmittance of the support substrate is greater than or equal to 50%.
3. metallic mold for nano-imprint as described in claim 1, which is characterized in that the support substrate is light-transparent substrate, the pressure
Print layer is made of light absorbent.
4. metallic mold for nano-imprint as described in claim 1, which is characterized in that the embossed layer includes:
Positioned at the structure sheaf of the one side away from the support substrate, wherein the structure sheaf has opposite with the bulge-structure
The shading piece answered, the shading piece overlap in the orthographic projection of the support substrate with the absorbance region；
In the structure sheaf between adjacent shading piece, and positioned at the structure sheaf far from the support substrate side
Planarization layer；
Positioned at the planarization layer far from the support substrate side, and the bulge-structure layer with the bulge-structure.
5. metallic mold for nano-imprint as claimed in claim 4, which is characterized in that the shading piece is black matrix, alternatively, the screening
Light part is made of light absorbent.
6. a kind of production method of metallic mold for nano-imprint characterized by comprising
Support substrate is provided, and forms embossed layer in the one side of the supporting substrate；
Wherein, the embossed layer has bulge-structure corresponding with preset pattern, and the corresponding region of the bulge-structure is to inhale
Light region forms transmission region between adjacent bulge-structure.
7. production method as claimed in claim 6, which is characterized in that provide support substrate, and the one of the support substrate
Face forms embossed layer, comprising:
One layer of light shield layer is deposited on template vector, wherein the light shield layer is made of light absorbent；
The part light shield layer for being located at the transmission region is performed etching, the integrally formed support substrate and the pressure are formed
Print layer.
8. production method as claimed in claim 6, which is characterized in that provide support substrate, and the one of the support substrate
Face forms embossed layer, comprising:
One layer of photic zone is deposited on template vector, forms the support substrate；
One layer of light shield layer is deposited in the one side of the support substrate, wherein the light shield layer is made of light absorbent；
The part light shield layer for being located at the transmission region is performed etching, the embossed layer is formed.
9. production method as claimed in claim 6, which is characterized in that form embossed layer, packet in the one side of the supporting substrate
It includes:
One layer of structure sheaf is deposited in the one side away from the support substrate, wherein the structure sheaf has multiple shading pieces；
Between shading piece adjacent in the structure sheaf and the structure sheaf is far from one layer of support substrate side deposition
Planarization layer；
In the planarization layer far from one lamination glue-line of support substrate side deposition；
The moulding layer is performed etching, being formed has bulge-structure corresponding with preset pattern, and the bulge-structure is corresponding
Region be absorbance region, transmission region is formed between adjacent bulge-structure, and the absorbance region and the shading piece exist
The orthographic projection of the support substrate overlaps, and forms the embossed layer.
10. a kind of nano-imprinting method characterized by comprising
It is aligned using metallic mold for nano-imprint as described in any one in claim 1-5 with the substrate for being coated with nano impression glue-line；
The metallic mold for nano-imprint is pressed into the nano impression glue-line；
In metallic mold for nano-imprint side irradiating ultraviolet light, it is located at described in the transmission region by ultraviolet light solidification
Nano impression glue-line；
Part nano impression glue-line uncured in the nano impression glue-line on the substrate is dissolved by solvent, described in formation
Preset pattern.
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| CN110333565A (en) * | 2019-06-24 | 2019-10-15 | 武汉华星光电技术有限公司 | Metal nano grating and its nano impression preparation method and display device |
| CN110429052A (en) * | 2019-08-12 | 2019-11-08 | 厦门乾照光电股份有限公司 | A kind of chip selectivity method for carrying |
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