CN109734331A - One kind can monolithic using antireflective low emissivity glass and preparation method thereof - Google Patents
One kind can monolithic using antireflective low emissivity glass and preparation method thereof Download PDFInfo
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- CN109734331A CN109734331A CN201910191156.5A CN201910191156A CN109734331A CN 109734331 A CN109734331 A CN 109734331A CN 201910191156 A CN201910191156 A CN 201910191156A CN 109734331 A CN109734331 A CN 109734331A
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- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 76
- 239000005344 low-emissivity glass Substances 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 171
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000011521 glass Substances 0.000 claims abstract description 45
- 239000011241 protective layer Substances 0.000 claims abstract description 29
- 238000009413 insulation Methods 0.000 claims abstract description 25
- 239000005357 flat glass Substances 0.000 claims abstract description 18
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 15
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004062 sedimentation Methods 0.000 claims description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 14
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 14
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 13
- OBOYOXRQUWVUFU-UHFFFAOYSA-N [O-2].[Ti+4].[Nb+5] Chemical compound [O-2].[Ti+4].[Nb+5] OBOYOXRQUWVUFU-UHFFFAOYSA-N 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 12
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 11
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical group [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 6
- 239000012300 argon atmosphere Substances 0.000 claims description 5
- 238000005816 glass manufacturing process Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 230000000191 radiation effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 16
- 238000007254 oxidation reaction Methods 0.000 abstract description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 5
- 229910003087 TiOx Inorganic materials 0.000 description 13
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 6
- 238000005496 tempering Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000013003 hot bending Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001275 Niobium-titanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- Surface Treatment Of Glass (AREA)
Abstract
The present invention disclose one kind can monolithic using antireflective low emissivity glass and preparation method thereof, wherein can monolithic the use of antireflective low emissivity glass successively includes: original sheet glass, multiple dielectric layers, infrared thermal insulation layer, multiple protective layers；Wherein, adjacent two dielectric layer is high-index material and low-index material interconnection, plays the role of antireflective, and the infrared thermal insulation layer is tin indium oxide, plays the role of Low emissivity.Simultaneously as indium tin oxide material will not oxidation by air, even if so glass exposure in air, direct monolithic uses, and film layer will not be oxidized.
Description
Technical field
The present invention relates to energy-saving glass field, in particular to one kind can monolithic use antireflective low emissivity glass and its preparation
Method.
Background technique
Conventional offline low emissivity glass is since its film layer contains Ag layers, and Ag layers are oxidized easily, and film layer cannot directly expose
In air, cause conventional offline low emissivity glass can not monolithic use, it is necessary to and other one piece of glass plate cooperation, film surface is inwardly
Forming hollow glass can use, and this mode hampers the application of conventional offline low emissivity glass significantly.In addition, traditional
Anti reflection glass can not obstruct infrared light, not have the effect for reducing radiation.
Summary of the invention
The main object of the present invention be propose one kind can monolithic using antireflective low emissivity glass, it is desirable to provide it is a kind of new
Special glass, while with antireflective, low radiance, additionally it is possible to which monolithic uses.
To achieve the above object, the present invention propose can monolithic use antireflective low emissivity glass, it is described can monolithic use subtract
Reflecting low emissivity glass successively includes: original sheet glass, multiple dielectric layers, infrared thermal insulation layer, multiple protective layers；Wherein, adjacent
Two dielectric layers are high-index material and low-index material interconnection, play the role of antireflective, and the infrared thermal insulation layer is oxygen
Change indium tin, plays the role of Low emissivity.
Optionally, it is described can monolithic using antireflective low emissivity glass successively include: original sheet glass, the first dielectric layer,
Second dielectric layer, third dielectric layer, the 4th dielectric layer, the 5th dielectric layer, the 6th dielectric layer, the 7th dielectric
Layer, infrared thermal insulation layer, the first protective layer, the second protective layer.
Optionally, first dielectric layer be high-index material, second dielectric layer be low-index material,
The third dielectric layer is high-index material, the 4th dielectric layer is low-index material, the 5th dielectric
Layer is high-index material, the 6th dielectric layer is low-index material, the 7th dielectric layer is high refractive index material
Material.
Optionally, first dielectric layer is the one of which of titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium,
With a thickness of 13nm~19nm；
Second dielectric layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 25nm~35nm；
The third dielectric layer is the one of which of titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium, with a thickness of
120nm~135nm；
4th dielectric layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 10nm~20nm；
5th dielectric layer is the one of which of titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium, with a thickness of
50nm~60nm；
6th dielectric layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 0nm~6nm；
7th dielectric layer is the one of which of titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium, with a thickness of
50nm~70nm；
The infrared thermal insulation layer with a thickness of 15nm~60nm；
First protective layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 60nm~80nm；
Second protective layer is aluminium silicon nitride, with a thickness of 3nm~10nm.
Optionally, first dielectric layer with a thickness of 15nm~17nm；
Second dielectric layer with a thickness of 29nm~32nm；
The third dielectric layer with a thickness of 125nm~130nm；
4th dielectric layer with a thickness of 13nm~17nm；
5th dielectric layer with a thickness of 53nm~57nm；
6th dielectric layer with a thickness of 2nm~4nm；
7th dielectric layer with a thickness of 55nm~65nm；
The infrared thermal insulation layer with a thickness of 25nm~45nm；
First protective layer with a thickness of 65nm~75nm；
Second protective layer with a thickness of 4nm~6nm.
Optionally, it is described can monolithic using antireflective low emissivity glass glass surface and film surface the equal < of visible reflectance
5%, it is described can monolithic using antireflective low emissivity glass visible light transmittance relative to the anti-reflection > 1% of original sheet glass.
Optionally, it is described can monolithic the use of the glass surface of antireflective low emissivity glass and the color of film surface is muted color, glass
The color value of face and film surface is -2.3≤a*≤1, -4≤b*≤1.5.
Optionally, it is described can monolithic use antireflective low emissivity glass U value≤3.6W/m2·K。
Optionally, it is described can monolithic using ultraviolet ray transmissivity of the antireflective low emissivity glass at wavelength 300nm≤
5%.
The present invention also proposes a kind of glass-making processes, for manufacture it is above-mentioned can monolithic use antireflective Low emissivity glass
Glass, the glass-making processes the following steps are included:
S1, cleaning original sheet glass, drying are placed on magnetron sputtering area；
S2, in argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds the multiple dielectric layers of rotating cathode sputtering sedimentation；
S3, in argon atmosphere, Bipolar pulse power adds the infrared thermal insulation layer of jack to jack adapter electrode systems sputtering sedimentation；
S4, in argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds the multiple protective layers of rotating cathode sputtering sedimentation.
It is of the invention can monolithic using antireflective low emissivity glass be it is a kind of in glass surface deposition multilayer high refractive index and
Low-refraction is alternately superimposed the indium tin oxide material of material and one layer of barrier infrared light, and the visible light in sunlight is enable to increase
Through, antireflective, and as infrared reflection mirror, the electron radiation in sunlight, ultraviolet and infrared ray are foreclosed,
The special glass that object secondary radiation heat reflection is gone back simultaneously.By using can monolithic use antireflective low emissivity glass, can
It is occupied with being reduced solar infrared thermal energy total transmittance gIR, energy saving, adjusting glass heat-proof performance, improvement and protection human body
The firmly effect of environment and reduction surrounding light pollution.Simultaneously as indium tin oxide material will not oxidation by air, even if so glass
In air, direct monolithic uses for glass exposure, and film layer will not be oxidized.
Detailed description of the invention
Fig. 1 be the present invention can monolithic use one embodiment of antireflective low emissivity glass structure chart.
Drawing reference numeral explanation:
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, it is not intended to limit the present invention.
Every other embodiment obtained by those of ordinary skill in the art without making creative efforts, belongs to this hair
The range of bright protection.
Technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution
Conjunction is not present, also not the present invention claims protection scope within.
In addition, technical solution of the present invention uses color model (Lab) as colour code, color model (Lab) is based on people couple
The model for feeling to set up of color, the numerical value in Lab the people of twenty-twenty vision is described it can be seen that all colours.Lab color
By brightness (L) and color value a*, b*, totally three elements form color model.Wherein, L indicates brightness (Luminosity), a* table
Show the range from carmetta to green, b* indicates the range from yellow to blue.
The present invention provide one kind can monolithic using antireflective low emissivity glass.
It is described can monolithic the use of antireflective low emissivity glass successively includes: original sheet glass, it is multiple dielectric layers, infrared heat-insulated
Layer, multiple protective layers.Wherein, adjacent two dielectric layer is high-index material and low-index material interconnection, plays antireflective
Effect, the infrared thermal insulation layer are tin indium oxide, play the role of Low emissivity.Multiple protective layers play the role of protecting film surface.
It is of the invention can monolithic using antireflective low emissivity glass be it is a kind of in glass surface deposition multilayer high refractive index and
Low-refraction is alternately superimposed the indium tin oxide material of material and one layer of barrier infrared light, and the visible light in sunlight is enable to increase
Through, antireflective, and as infrared reflection mirror, the electron radiation in sunlight, ultraviolet and infrared ray are foreclosed,
The special glass that object secondary radiation heat reflection is gone back simultaneously.By using can monolithic use antireflective low emissivity glass, can
It is occupied with being reduced solar infrared thermal energy total transmittance gIR, energy saving, adjusting glass heat-proof performance, improvement and protection human body
The firmly effect of environment and reduction surrounding light pollution.Simultaneously as indium tin oxide material will not oxidation by air, even if so glass
In air, direct monolithic uses for glass exposure, and film layer will not be oxidized.
Optionally, in one embodiment, as shown in Figure 1, it is described can monolithic successively wrapped using antireflective low emissivity glass 100
It includes: original sheet glass 10, the first dielectric layer 21, the second dielectric layer 22, third dielectric layer 23, the 4th dielectric layer 24,
Five dielectric layers 25, the 6th dielectric layer 26, the 7th dielectric layer 27, infrared thermal insulation layer 30, the protection of the first protective layer 28, second
Layer 29.Adjacent two dielectric layer in first to the 7th dielectric layer is high-index material and low-index material interconnection, is risen
It is acted on to antireflective.First to the 7th dielectric is set simultaneously, and anti-reflective effect is preferable, and excessive dielectric layer will increase production
Cost, it is bad that very few dielectric layer will lead to anti-reflective effect.
Specifically, in one embodiment, first dielectric layer 21 is high-index material, second dielectric layer
22 be low-index material, the third dielectric layer 23 is high-index material, the 4th dielectric layer 24 is low refraction
Rate material, the 5th dielectric layer 25 are high-index material, the 6th dielectric layer 26 is low-index material, described
7th dielectric layer 27 is high-index material.Such high-index material and low-index material interconnection play antireflective work
With.
It should be noted that the ranges of indices of refraction of the high-index material is 2.0~2.5；The low-index material
Refractive index range be 1.5~1.9.
Optionally, in one embodiment, as shown in Figure 1, first dielectric layer 21 is titanium oxide, niobium oxide, oxidation
The one of which of zirconium or niobium oxide titanium, with a thickness of 13nm~19nm；Second dielectric layer 22 is oxidation borosilicate, silica
The one of which of aluminium, with a thickness of 25nm~35nm；The third dielectric layer 23 is titanium oxide, niobium oxide, zirconium oxide or oxygen
Change the one of which of niobium titanium, with a thickness of 120nm~135nm；4th dielectric layer 24 is oxidation borosilicate, oxidation sial
One of which, with a thickness of 10nm~20nm；5th dielectric layer 25 is titanium oxide, niobium oxide, zirconium oxide or niobium oxide
The one of which of titanium, with a thickness of 50nm~60nm；6th dielectric layer 26 be aoxidize borosilicate, oxidation sial wherein one
Kind, with a thickness of 0nm~6nm；7th dielectric layer 27 be titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium wherein
One kind, with a thickness of 50nm~70nm；The infrared thermal insulation layer 30 with a thickness of 15nm~60nm；First protective layer 28 is
The one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 60nm~80nm；Second protective layer 9 is aluminium silicon nitride, thick
Degree is 3nm~10nm.
Titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium are high-index materials, and oxidation borosilicate, oxidation sial are low folding
Rate material, high-index material and low-index material interconnection are penetrated, antireflective can be played the role of.Simultaneous oxidation borosilicate, oxidation
The hardness of sial is preferable, and the hardness of aluminium silicon nitride is more preferable, and oxidation borosilicate, oxidation sial, aluminium silicon nitride, can be to prevent as protective layer
Only film layer structure is damaged.Furthermore each layer is arranged according to thickness as above, can obtain preferable antireflective, low radiance.
Preferably, first dielectric layer 21 with a thickness of 15nm~17nm；The thickness of second dielectric layer 22
For 29nm~32nm；The third dielectric layer 23 with a thickness of 125nm~130nm；The thickness of 4th dielectric layer 24
For 13nm~17nm；5th dielectric layer 25 with a thickness of 53nm~57nm；6th dielectric layer 26 with a thickness of
2nm~4nm；7th dielectric layer 27 with a thickness of 55nm~65nm；The infrared thermal insulation layer 30 with a thickness of 25nm~
45nm；First protective layer 28 with a thickness of 65nm~75nm；Second protective layer 29 with a thickness of 4nm~6nm.Each layer
It is arranged according to thickness as above, more preferably antireflective, low radiance can be obtained.
It is described can monolithic using antireflective low emissivity glass 100 glass surface and film surface the equal < 5% of visible reflectance, institute
State can monolithic using antireflective low emissivity glass 100 visible light transmittance relative to the anti-reflection > 1% of original sheet glass.It is described can be single
Piece is muted color using the glass surface of antireflective low emissivity glass 100 and the color of film surface, and the color value of glass surface and film surface is-
2.3≤a*≤1、-4≤b*≤1.5。
It is described can monolithic using antireflective low emissivity glass 100 glass surface wavelength be 800nm at reflectivity must not be low
15% must not be lower than in 10%, in wavelength for the reflectivity at 900nm, film surface must not be low for the reflectivity at 800nm in wavelength
20% must not be lower than in 12%, in wavelength for the reflectivity at 900nm.It is described can monolithic use antireflective low emissivity glass U
Value≤3.6W/m2·K.Wherein, the definition of U value is, when the temperature difference of glass assembly is 1 DEG C, from unit in the unit time
Transmission heat of the area glass component side air to other side air.It is described can monolithic use antireflective low emissivity glass 100
Ultraviolet ray transmissivity≤5% at wavelength 300nm.It is described can monolithic can be obstructed using antireflective low emissivity glass 100 to people
The harmful electron radiation of body and ultraviolet light, can monolithic use, the intensive treatments such as tempering, hot bending can be carried out.
The present invention also proposes a kind of glass-making processes, it is for manufacturing the present invention can monolithic use antireflective Low emissivity glass
Glass, the glass-making processes the following steps are included:
S1, cleaning original sheet glass, drying are placed on magnetron sputtering area；
S2, in argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds the multiple dielectric layers of rotating cathode sputtering sedimentation；
S3, in argon atmosphere, Bipolar pulse power adds the infrared thermal insulation layer of jack to jack adapter electrode systems sputtering sedimentation；
S4, in argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds the multiple protective layers of rotating cathode sputtering sedimentation.
Specifically, in one embodiment, first original sheet glass is cleaned, drying is placed on magnetron sputtering area.In argon nitrogen or argon
In oxygen atmosphere, intermediate frequency power supply adds rotating cathode in first to the 7th dielectric layer of surface sputtering sedimentation of glass.In argon atmospher
In enclosing, Bipolar pulse power adds jack to jack adapter electrode systems infrared thermal insulation layer of sputtering sedimentation on the surface of the 7th dielectric layer.Finally,
In argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds rotating cathode in surface sputtering sedimentation first and second guarantors of infrared thermal insulation layer
Sheath.
Below with reference to specific embodiment to it is of the invention can monolithic use antireflective low emissivity glass and its manufacturing method
It is further described.It should be noted that in the examples below, titanium oxide, niobium oxide, zirconium oxide, niobium oxide titanium, oxidation
Borosilicate, oxidation sial, tin indium oxide, aluminium silicon nitride use TiOx, ZrOx, TiNbOx, SiBOx, SiAlOx, ITO, SiAlNx respectively
It indicates.
Embodiment 1
This can monolithic using the structure of antireflective low emissivity glass successively include:
Original sheet glass；
First dielectric layer is TiOx, with a thickness of 16nm；
Second dielectric layer is SiBOx, with a thickness of 30nm；
Third dielectric layer is TiOx, with a thickness of 125nm；
4th dielectric layer is SiBOx, with a thickness of 15nm；
5th dielectric layer is TiOx, with a thickness of 55nm；
6th dielectric layer is SiBOx, with a thickness of 3nm；
7th dielectric layer is TiOx, with a thickness of 60nm；
Infrared thermal insulation layer is ITO, with a thickness of 30nm.
First protective layer is SiBOx, with a thickness of 70nm；
Second protective layer is SiAlNx, with a thickness of 5nm.
The above-mentioned specific manufacturing process of each film layer are as follows:
TiOx layers of deposition add rotating cathode to carry out in argon oxygen atmosphere using intermediate frequency power supply, vacuum magnetic-control sputtering plant capacity
For 70~90kW, intermediate frequency power supply frequency is 40kHz.
SiBOx layers of deposition add rotating cathode to carry out in argon oxygen atmosphere using intermediate frequency power supply, vacuum magnetic-control sputtering equipment function
Rate is 50~60kW, and intermediate frequency power supply frequency is 40kHz.
ITO layer deposition adds jack to jack adapter electrode systems to carry out in argon atmosphere using Bipolar pulse power, vacuum magnetic-control sputtering
Plant capacity is 40kW.
SiAlNx layers of deposition add rotating cathode sputtering sedimentation, vacuum magnetic-control sputtering in argon nitrogen atmosphere to set using intermediate frequency power supply
Standby power is 50~65kW, and intermediate frequency power supply frequency is 40kHz.
This can monolithic using antireflective low emissivity glass optical property and thermal property it is as follows:
This can monolithic using antireflective low emissivity glass glass surface visible reflectance be 4.81%, the visible light of film surface is anti-
Penetrate rate be 4.32% described in can monolithic using antireflective low emissivity glass visible light transmittance it is anti-reflection relative to original sheet glass
1.60%；This can monolithic the use of the glass surface of antireflective low emissivity glass and the color of film surface is muted color, the color value of glass surface
For a*=-2.00, b*=-2.24, the color value of film surface is a*=0.40, b*=1.43.It is described can monolithic use antireflective
The U value of low emissivity glass is 3.31, and glass surface is that reflectivity at 800nm is 10%, is the reflection at 900nm in wavelength in wavelength
Rate is 15%, and film surface is that reflectivity at 800nm is 12%, be reflectivity at 900nm in wavelength is 20% in wavelength.It is described
Can monolithic using ultraviolet ray transmissivity of the antireflective low emissivity glass wavelength 300nm at be 5%.It is described can monolithic use anti-reflection
Penetrate low emissivity glass can monolithic use, the intensive treatments such as tempering, hot bending can be carried out.
Embodiment 2
This can monolithic using the structure of antireflective low emissivity glass successively include:
Original sheet glass；
First dielectric layer is TiOx, with a thickness of 17nm；
Second dielectric layer is SiBOx, with a thickness of 32nm；
Third dielectric layer is TiOx, with a thickness of 130nm；
4th dielectric layer is SiBOx, with a thickness of 20nm；
5th dielectric layer is TiOx, with a thickness of 57nm；
6th dielectric layer is SiBOx, with a thickness of 5nm；
7th dielectric layer is TiOx, with a thickness of 65nm；
Infrared thermal insulation layer is ITO, with a thickness of 35nm；
First protective layer is SiBOx, with a thickness of 75nm；
Second protective layer is SiAlNx, with a thickness of 4nm.
The above-mentioned specific manufacturing process of each film layer are as follows:
TiOx layers of deposition add rotating cathode to carry out in argon oxygen atmosphere using intermediate frequency power supply, vacuum magnetic-control sputtering plant capacity
For 70~90kW, intermediate frequency power supply frequency is 40kHz.
SiBOx layers of deposition add rotating cathode to carry out in argon oxygen atmosphere using intermediate frequency power supply, vacuum magnetic-control sputtering equipment function
Rate is 50~60kW, and intermediate frequency power supply frequency is 40kHz.
ITO layer deposition adds jack to jack adapter electrode systems to carry out in argon atmosphere using Bipolar pulse power, vacuum magnetic-control sputtering
Plant capacity is 40kW.
SiAlNx layers of deposition add rotating cathode sputtering sedimentation, vacuum magnetic-control sputtering in argon nitrogen atmosphere to set using intermediate frequency power supply
Standby power is 50~65kW, and intermediate frequency power supply frequency is 40kHz.
This kind it is for building can monolithic using antireflective low emissivity glass optical property and hot property it is as follows:
This can monolithic using antireflective low emissivity glass glass surface visible reflectance be 4.78%, the visible light of film surface is anti-
Penetrating rate is 4.43%；It is described can monolithic using antireflective low emissivity glass visible light transmittance it is anti-reflection relative to original sheet glass
1.67%；This can monolithic the use of the glass surface of antireflective low emissivity glass and the color of film surface is muted color, the color value of glass surface
For a*=0.40, b*=1.01, the color value of film surface is a*=-2.23, b*=1.23.It is described can monolithic using antireflective it is low
The U value of radiant glass is 3.31, and glass surface is that reflectivity at 800nm is 10%, is the reflectivity at 900nm in wavelength in wavelength
It is 15%, film surface is that reflectivity at 800nm is 12%, be reflectivity at 900nm in wavelength is 20% in wavelength.It is described can
Monolithic is 5% using ultraviolet ray transmissivity of the antireflective low emissivity glass at wavelength 300nm.It is described can monolithic use antireflective
Low emissivity glass can monolithic use, the intensive treatments such as tempering, hot bending can be carried out.
Other embodiments are referred to Examples 1 and 2, and details are not described herein.The specific parameters of other embodiments and
Performance is shown in Tables 1 and 2.
The membranous layer ingredient and thickness of each embodiment of table 1
The performance parameter of each embodiment of table 2
Utilize the distinctive heat resistance such as TiOx, SiBOx, SiAlNx, ITO material and heat treatment front and back stable optical performance
Property, allow new material TiOx, be in that symmetrical high low-refraction is matched and be superimposed with SiBOx, in conjunction with SiAlNx material so as to more preferably
Adaptation heat treatment when high temperature and wear-resisting.
Multiple dielectric layers are antireflection film layer, while playing a part of connecting glass and infrared thermal insulation layer, with glass it
Between adhesive property it is good, and alleviate the internal stress of entire infrared thermal insulation layer, promote glass scratch resistance, wear-resisting and erosion-resisting property
Energy.Dielectric layer uses frequency to add rotating cathode to sputter to be formed for 40kHz, the intermediate frequency power supply with good arc extinction performance, refraction
Rate matched well makes the reflectivity of product and transmitance reach ideal value.
It is of the invention can monolithic using antireflective low emissivity glass there is unique film layer structure, there is low-E, height
The advantages of heat resistance, film layer, which is not afraid of, to be oxidized, can monolithic use；It can be carried out the intensive treatments such as tempering, hot bending and curved tempering；It can be full
The requirement that foot is processed in strange land, cuts, breaks the following process such as piece, edging, drilling, cleaning, convenient for being widely popularized.
Embodiments of the present invention above described embodiment only expresses, the description thereof is more specific and detailed, but can not
Therefore limitations on the scope of the patent of the present invention are interpreted as.It should be pointed out that for those of ordinary skill in the art,
Without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection model of the invention
It encloses.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. one kind can monolithic use antireflective low emissivity glass, which is characterized in that it is described can monolithic use antireflective Low emissivity glass
Glass successively includes: original sheet glass, multiple dielectric layers, infrared thermal insulation layer, multiple protective layers；Wherein, adjacent two dielectric layer is
High-index material and low-index material interconnection play the role of antireflective, and the infrared thermal insulation layer is tin indium oxide, play low
Radiation effects.
2. as described in claim 1 can monolithic use antireflective low emissivity glass, which is characterized in that it is described can monolithic use subtract
Reflection low emissivity glass successively includes: original sheet glass, the first dielectric layer, the second dielectric layer, third dielectric layer, the 4th electricity
Dielectric layer, the 5th dielectric layer, the 6th dielectric layer, the 7th dielectric layer, infrared thermal insulation layer, the first protective layer, the second protection
Layer.
3. as claimed in claim 2 can monolithic use antireflective low emissivity glass, which is characterized in that first dielectric layer
Be low-index material for high-index material, second dielectric layer, the third dielectric layer be high-index material,
4th dielectric layer is low-index material, the 5th dielectric layer is high-index material, the 6th dielectric
Layer is low-index material, the 7th dielectric layer is high-index material.
4. as claimed in claim 3 can monolithic use antireflective low emissivity glass, which is characterized in that
First dielectric layer be titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium one of which, with a thickness of 13nm~
19nm；
Second dielectric layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 25nm~35nm；
The third dielectric layer is the one of which of titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium, with a thickness of 120nm
~135nm；
4th dielectric layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 10nm~20nm；
5th dielectric layer be titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium one of which, with a thickness of 50nm~
60nm；
6th dielectric layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 0nm~6nm；
7th dielectric layer be titanium oxide, niobium oxide, zirconium oxide or niobium oxide titanium one of which, with a thickness of 50nm~
70nm；
The infrared thermal insulation layer with a thickness of 15nm~60nm；
First protective layer is the one of which for aoxidizing borosilicate, aoxidizing sial, with a thickness of 60nm~80nm；
Second protective layer is aluminium silicon nitride, with a thickness of 3nm~10nm.
5. as claimed in claim 4 can monolithic use antireflective low emissivity glass, which is characterized in that
First dielectric layer with a thickness of 15nm~17nm；
Second dielectric layer with a thickness of 29nm~32nm；
The third dielectric layer with a thickness of 125nm~130nm；
4th dielectric layer with a thickness of 13nm~17nm；
5th dielectric layer with a thickness of 53nm~57nm；
6th dielectric layer with a thickness of 2nm~4nm；
7th dielectric layer with a thickness of 55nm~65nm；
The infrared thermal insulation layer with a thickness of 25nm~45nm；
First protective layer with a thickness of 65nm~75nm；
Second protective layer with a thickness of 4nm~6nm.
6. as it is described in any one of claim 1 to 5 can monolithic use antireflective low emissivity glass, which is characterized in that it is described can
Monolithic using the glass surface and film surface of antireflective low emissivity glass visible reflectance equal < 5%, it is described can monolithic use anti-reflection
The visible light transmittance of low emissivity glass is penetrated relative to the anti-reflection > 1% of original sheet glass.
7. as it is described in any one of claim 1 to 5 can monolithic use antireflective low emissivity glass, which is characterized in that it is described can
Monolithic is muted color using the glass surface of antireflective low emissivity glass and the color of film surface, and the color value of glass surface and film surface is-
2.3≤a*≤1、-4≤b*≤1.5。
8. as it is described in any one of claim 1 to 5 can monolithic use antireflective low emissivity glass, which is characterized in that it is described can
Monolithic uses U value≤3.6W/m of antireflective low emissivity glass2·K。
9. as it is described in any one of claim 1 to 5 can monolithic use antireflective low emissivity glass, which is characterized in that it is described can
Monolithic uses ultraviolet ray transmissivity≤5% of the antireflective low emissivity glass at wavelength 300nm.
10. a kind of glass-making processes, for manufacture it is as described in any one of claim 1 to 9 can monolithic it is low using antireflective
Radiant glass, which comprises the following steps:
S1, cleaning original sheet glass, drying are placed on magnetron sputtering area；
S2, in argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds the multiple dielectric layers of rotating cathode sputtering sedimentation；
S3, in argon atmosphere, Bipolar pulse power adds the infrared thermal insulation layer of jack to jack adapter electrode systems sputtering sedimentation；
S4, in argon nitrogen or argon oxygen atmosphere, intermediate frequency power supply adds the multiple protective layers of rotating cathode sputtering sedimentation.
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