CN109697958B - Organic light-emitting display panel and organic light-emitting display device - Google Patents
Organic light-emitting display panel and organic light-emitting display device Download PDFInfo
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- CN109697958B CN109697958B CN201910024291.0A CN201910024291A CN109697958B CN 109697958 B CN109697958 B CN 109697958B CN 201910024291 A CN201910024291 A CN 201910024291A CN 109697958 B CN109697958 B CN 109697958B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
Abstract
The invention discloses an organic light-emitting display panel and an organic light-emitting display device, wherein an overlapping area exists between a lower electrode and a grid electrode of at least one thin film transistor in a plurality of thin film transistors along a direction vertical to a substrate in the organic light-emitting display panel; the shielding structure positioned between the driving circuit layer and the lower electrode is connected with a fixed potential and is arranged in at least a partial overlapping area to shield the parasitic capacitance between the grid electrode of the thin film transistor and the lower electrode; the lower electrode is electrically connected with the source electrode or the drain electrode of the at least one thin film transistor through a connecting structure, and the projection of the connecting structure and the shielding structure on the substrate does not overlap the organic light-emitting unit of the organic light-emitting unit. Through the technical scheme of the invention, the potential change of the lower electrode of the organic light-emitting unit does not cause the potential change of the grid electrode of the thin film transistor in the overlapped area with the lower electrode, and the problem of poor contact between the lower electrode of the organic light-emitting unit and the source electrode or the drain electrode of the corresponding thin film transistor is solved.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to an organic light-emitting display panel and an organic light-emitting display device.
Background
OLEDs, i.e., Organic Light-Emitting diodes (Organic Light-Emitting diodes), also called Organic electroluminescent devices, have gradually occupied a place in the field of small-sized displays due to their advantages of being Light, thin, bendable, high in contrast, wide in color gamut, and the like. The basic structure thereof includes an organic light emitting unit corresponding to each pixel region, which includes upper and lower electrodes and a light emitting layer between the upper and lower electrodes, when a voltage is applied to the upper and lower electrodes, holes and electrons move to the light emitting layer, where they are recombined, and excitons in the light emitting layer migrate from an excited state to a ground state to emit light.
With the increase of the application time, the potential on the lower electrode of the organic light emitting unit rises, and the change of the potential on the lower electrode of the organic light emitting unit can cause the change of the potential on the metal structure in the pixel driving circuit which has an overlapped area with the lower electrode of the organic light emitting unit, thereby influencing the display effect of the organic light emitting display panel.
Disclosure of Invention
The invention provides an organic light-emitting display panel and an organic light-emitting display device, which can prevent the potential change on a thin film transistor gate electrode in an overlapped area with a lower electrode caused by the potential change on the lower electrode of an organic light-emitting unit and solve the problem of poor contact between the lower electrode of the organic light-emitting unit and a source electrode or a drain electrode of a corresponding thin film transistor.
In a first aspect, an embodiment of the present invention provides an organic light emitting display panel, including:
a substrate;
the organic light-emitting device comprises a driving circuit layer and an organic light-emitting device layer, wherein the driving circuit layer is positioned on the substrate, the organic light-emitting device layer is positioned on one side, far away from the substrate, of the driving circuit layer, the driving circuit layer is provided with a plurality of pixel driving circuits, each pixel driving circuit comprises a plurality of thin film transistors, and the organic light-emitting device layer is provided with a plurality of organic light-emitting units;
the organic light-emitting units are arranged in one-to-one correspondence with the pixel driving circuits, each organic light-emitting unit comprises a lower electrode, a light-emitting layer and an upper electrode which are sequentially arranged along the direction far away from the substrate, and an overlapping area exists between the lower electrode and the grid electrode of at least one thin film transistor in the plurality of thin film transistors along the direction vertical to the substrate;
the shielding structure is arranged in at least part of the overlapping area so as to shield parasitic capacitance between the grid electrode of the thin film transistor and the lower electrode;
the lower electrode is electrically connected with the source electrode or the drain electrode of at least one thin film transistor in the plurality of thin film transistors through a connecting structure, and the projection of the connecting structure and the projection of the shielding structure on the substrate do not overlap.
Further, the plurality of thin film transistors include a light emission control transistor, and the lower electrode is electrically connected to a source or a drain of the light emission control transistor through the connection structure;
a first planarization layer is formed between the driving circuit layer and the shielding structure, and a first through hole exposing the source electrode or the drain electrode of the light-emitting control transistor is formed on the first planarization layer; the connection structure comprises a connection section which is formed in the first through hole and electrically connected with the source electrode or the drain electrode of the light-emitting control transistor, and a support section which is positioned on the first planarization layer and electrically connected with the connection section; the supporting section and the shielding structure are arranged on the same layer.
Further, a second planarization layer is formed between the shielding structure and the organic light emitting device layer, a second via hole exposing the connection structure is formed on the second planarization layer, and the lower electrode extends into the second via hole to be electrically connected with the support section.
Further, the contact area of the lower electrode and the support section is smaller than the area of one side of the support section facing the lower electrode.
Further, the first via hole and the second via hole are arranged in a staggered mode along a direction perpendicular to the substrate.
Further, the first via hole and the second via hole are coaxially arranged along a direction perpendicular to the substrate, and along the direction perpendicular to the substrate, a first cross section of the second via hole close to the first via hole covers a second cross section of the first via hole close to the second via hole, and the area of the first cross section is larger than that of the second cross section.
Further, the driving line layer further includes a first power supply signal line and a second power supply signal line, the first power supply signal line and the second power supply signal line are both electrically connected to the pixel driving circuit, the first power supply signal line and the second power supply signal line are used for supplying power supply signals with different electric potentials to the pixel driving circuit, and the shielding structure is electrically connected to the first power supply signal line or the second power supply signal line.
Further, the plurality of thin film transistors comprise driving transistors, and in a direction perpendicular to the substrate, the lower electrodes and the gates of the driving transistors have overlapping regions;
the driving circuit layer further comprises a metal structure, and the film layer where the metal structure is located between the grid electrode of the driving transistor and the lower electrode;
the driving line layer further includes a first power signal line electrically connected to the pixel driving circuit, the first power signal line being configured to supply a power signal of a high potential to the pixel driving circuit, and the metal structure being electrically connected to the first power signal line and forming a storage capacitor with a gate of the driving transistor.
Further, along a direction perpendicular to the substrate, the metal structure covers a first region of the gate of the driving transistor and exposes a second region of the gate of the driving transistor, and the shielding structure covers at least the second region of the gate of the driving transistor.
In a second aspect, embodiments of the present invention further provide an organic light emitting display device, including the organic light emitting display panel of the first aspect.
The embodiment of the invention provides an organic light-emitting display panel and an organic light-emitting display device, wherein the organic light-emitting display panel comprises a shielding structure positioned between a driving circuit layer and a lower electrode, the shielding structure is connected with a fixed potential, the shielding structure is arranged in at least a partial overlapping area to shield a parasitic capacitance between a grid electrode and the lower electrode of a thin film transistor, the influence of the change of the potential on the lower electrode of an organic light-emitting unit on the display effect of the organic light-emitting display panel is avoided, the lower electrode of the organic light-emitting unit is electrically connected with a source electrode or a drain electrode of at least one thin film transistor through a connecting structure, the projection of the connecting structure and the shielding structure on a substrate is not overlapped, and the problem of poor contact between the lower electrode of the organic light-emitting unit and the source electrode.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic cross-sectional view illustrating an organic light emitting display panel according to an embodiment of the invention;
fig. 2 is a schematic circuit structure diagram of a pixel driving circuit according to an embodiment of the present invention;
fig. 3 is a schematic projection diagram of a first via and a second via according to an embodiment of the present invention;
fig. 4 is a schematic projection view of another first via and a second via according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an organic light emitting display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures. Throughout this specification, the same or similar reference numbers refer to the same or similar structures, elements, or processes. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
The embodiment of the invention provides an organic light-emitting display panel, which comprises a substrate, a driving circuit layer and an organic light-emitting device layer, wherein the driving circuit layer is positioned on the substrate, the organic light-emitting device layer is positioned on one side, far away from the substrate, of the driving circuit layer, the driving circuit layer is provided with a plurality of pixel driving circuits, each pixel driving circuit comprises a plurality of thin film transistors, and the organic light-emitting device layer is provided with a plurality of organic light-emitting units. The organic light-emitting units are arranged in one-to-one correspondence with the pixel driving circuits, each organic light-emitting unit comprises a lower electrode, a light-emitting layer and an upper electrode which are sequentially arranged along the direction away from the substrate, and the lower electrode and the grid electrode of at least one thin film transistor in the plurality of thin film transistors have an overlapping area along the direction perpendicular to the substrate. The organic light-emitting display panel further comprises a shielding structure positioned between the driving circuit layer and the lower electrode, the shielding structure is connected with a fixed potential, and the shielding structure is arranged in at least a part of an overlapping area to shield a parasitic capacitance between a grid electrode of the thin film transistor and the lower electrode. The lower electrode is electrically connected with the source electrode or the drain electrode of at least one thin film transistor in the plurality of thin film transistors through a connecting structure, and the projection of the connecting structure and the projection of the shielding structure on the substrate do not overlap.
With the increase of the application time, the internal resistance of the organic light emitting unit in the organic light emitting display panel increases, and the potential on the upper electrode of the organic light emitting unit generally remains unchanged, so that the potential on the lower electrode of the organic light emitting unit increases, and the change of the potential of the lower electrode of the organic light emitting unit can cause the change of the potential on the metal structure in the pixel driving circuit which has an overlapping area with the lower electrode of the organic light emitting unit, thereby affecting the display effect of the organic light emitting display panel.
The organic light-emitting display panel provided by the embodiment of the invention comprises a substrate, a driving circuit layer and an organic light-emitting device layer, wherein the driving circuit layer is positioned on the substrate, the organic light-emitting device layer is positioned on one side, far away from the substrate, of the driving circuit layer, the driving circuit layer is provided with a plurality of pixel driving circuits, each pixel driving circuit comprises a plurality of thin film transistors, and the organic light-emitting device layer is provided with a plurality of organic light-emitting units. The organic light-emitting units are arranged in one-to-one correspondence with the pixel driving circuits, each organic light-emitting unit comprises a lower electrode, a light-emitting layer and an upper electrode which are sequentially arranged along the direction away from the substrate, and the lower electrode and the grid electrode of at least one thin film transistor in the plurality of thin film transistors have an overlapping area along the direction perpendicular to the substrate. The organic light emitting display panel further comprises a shielding structure positioned between the driving circuit layer and the lower electrode, the shielding structure is connected with a fixed potential, the shielding structure is arranged in at least a part of an overlapping area to shield a parasitic capacitance between a grid electrode of the thin film transistor and the lower electrode, so that the potential change on the lower electrode of the organic light-emitting unit does not cause the potential change on the grid electrode of the thin film transistor in the overlapped area with the lower electrode, thereby avoiding the influence of the potential change on the lower electrode of the organic light-emitting unit on the display effect of the organic light-emitting display panel, and the lower electrode of the organic light-emitting unit is electrically connected with the source electrode or the drain electrode of at least one thin film transistor through the connecting structure, and the projection of the connecting structure and the shielding structure on the substrate is not overlapped, so that the problem of poor contact between the lower electrode of the organic light-emitting unit and the source electrode or the drain electrode of the corresponding thin film transistor is solved.
The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.
Fig. 1 is a schematic cross-sectional view of an organic light emitting display panel according to an embodiment of the invention. As shown in fig. 1, the organic light emitting display panel includes a substrate 1, and a driving line layer 2 on the substrate 1 and an organic light emitting device layer 3 on a side of the driving line layer 2 away from the substrate 1, the driving line layer 2 is provided with a plurality of pixel driving circuits, each pixel driving circuit includes a plurality of thin film transistors 4, and the organic light emitting device layer 3 is provided with a plurality of organic light emitting units 5. The organic light emitting unit 5 is disposed in one-to-one correspondence with the pixel driving circuit, the organic light emitting unit 5 includes a lower electrode 51, a light emitting layer 52, and an upper electrode 53 sequentially disposed along a direction away from the substrate 1, and an overlapping region E exists between the lower electrode 51 and a gate G of at least one thin film transistor 4 of the plurality of thin film transistors 4 along a direction perpendicular to the substrate 1. The organic light emitting display panel further comprises a shielding structure 6 located between the driving line layer 2 and the lower electrode 51, the shielding structure 6 is connected to a fixed potential, and the shielding structure 6 is disposed in at least a portion of the overlapping region E to shield a parasitic capacitance between the gate G of the thin film transistor 4 and the lower electrode 51, where the overlapping region E exists with the lower electrode 51. The lower electrode 51 is electrically connected to the source S or the drain D of at least one thin film transistor 4 of the plurality of thin film transistors 4 through the connection structure 7, and the projection of the connection structure 7 and the shielding structure 6 on the substrate 1 does not overlap.
With the increase of the application time, the internal resistance of the organic light emitting unit 5 in the organic light emitting display panel increases, the potential on the upper electrode 53 of the organic light emitting unit 5 generally remains unchanged, which results in the increase of the potential on the lower electrode 51 of the organic light emitting unit 5, the lower electrode 51 and the gate G of at least one thin film transistor 4 in the plurality of thin film transistors 4 have an overlap area E, a parasitic capacitance is formed between the gate G of the thin film transistor 4 and the lower electrode 51, which is disposed corresponding to at least a part of the overlap area E, and the presence of the parasitic capacitance causes the potential on the gate G of the thin film transistor 4, which has the overlap area E with the lower electrode 51, to change due to the change of the potential of the lower electrode 51, thereby affecting the operating state of the pixel driving circuit in the driving circuit layer 2 and affecting the display effect of the. In the embodiment of the present invention, the organic light emitting display panel includes the shielding structure 6 located between the driving line layer 2 and the lower electrode 51, the shielding structure 6 is connected to a fixed potential, and the shielding structure 6 is disposed in at least a part of the overlapping region E to shield a parasitic capacitance between the gate G of the thin film transistor 4 having the overlapping region E with the lower electrode 51 and the lower electrode 51, so that a change in a potential on the lower electrode 51 of the organic light emitting unit 5 does not cause a change in a potential on the gate G of the thin film transistor 4 having the overlapping region E with the lower electrode 51, and an influence of the change in a potential on the lower electrode 51 of the organic light emitting unit 5 on a display effect of the organic light emitting display panel is avoided.
In addition, the lower electrode 51 is electrically connected with the source S or the drain D of at least one thin film transistor 4 in the plurality of thin film transistors 4 through the connecting structure 7, the connecting structure 7 and the shielding structure 6 are not overlapped in projection on the substrate 1, and compared with the organic light emitting unit 5 which is not connected with the connecting structure 7 but is electrically connected with the source S or the drain D of at least one thin film transistor 4 through a deeper via hole, the probability that residual organic glue exists due to incomplete exposure of the organic glue at the via hole is reduced, and the probability that the lower electrode 51 of the organic light emitting unit 5 is in poor contact with the source S or the drain D of at least one thin film transistor 4 is further reduced.
Alternatively, as shown in fig. 1, a plurality of thin film transistors 4 may be provided including the light emission controlling transistor 41, and the lower electrode 51 is electrically connected to the source S or the drain D of the light emission controlling transistor 41 through the connection structure 7. A first planarization layer 81 is formed between the driving line layer 2 and the shield structure 6, and a first via hole 91 exposing the source electrode S or the drain electrode D of the light emission control transistor 41 is formed on the first planarization layer 81. The connection structure 7 includes a connection segment 71 formed in the first via hole 91 and electrically connected to the source S or the drain D of the emission control transistor 41, and a support segment 72 located on the first planarization layer 81 and electrically connected to the connection segment 71, and the support segment 72 and the shielding structure 6 are disposed at the same layer. The supporting section 72 provided with the connecting structure 7 and the shielding structure 6 are arranged on the same layer, so that the manufacturing process of the organic light-emitting display panel can be simplified, and the design of the organic light-emitting display panel layout is facilitated.
Alternatively, as shown in fig. 1, a second planarization layer 82 is formed between the shielding structure 6 and the organic light emitting device layer 3, a second via 92 exposing the connection structure 7 is formed on the second planarization layer 82, and the lower electrode 51 extends into the second via 92 to be electrically connected with the support segment 72. Specifically, the materials of the first planarizing layer 81 and the second planarizing layer 82 are all organic glue with certain fluidity, and if the connection structure 7 is not provided, the lower electrode 51 of the organic light emitting unit 5 is directly electrically connected to the source S or the drain D of the light emitting control transistor 41 through the deeper via hole penetrating through the first planarizing layer 81 and the second planarizing layer 82, which may cause a large difference between the thickness of the organic glue at the deeper via hole and the thickness of the organic glue at the rest position, and when the first planarizing layer 81 and the second planarizing layer 82 are exposed and developed, the organic glue at the via hole may not be completely exposed, which may cause a problem of organic glue residue, such that the lower electrode 51 of the organic light emitting unit 5 may be in poor contact with the source S or the drain D of the light emitting control transistor 41, or even be disconnected.
The lower electrode 51 of the organic light emitting unit 5 is disposed to be electrically connected to the source S or the drain D of the emission control transistor 41 through the connection structure 7, the lower electrode 51 of the organic light emitting unit 5 extends into the second via 92 to be electrically connected to the support section 72, the connection structure 7 includes a connection section 71 formed in the first via 91 to be electrically connected to the source S or the drain D of the emission control transistor 41, and the support section 72 located on the first planarization layer 81 and electrically connected to the connection section 71, the lower electrode 51 of the organic light emitting unit 5 is electrically connected to the source S or the drain D of the light emitting control transistor 41 directly through the deeper via hole penetrating through the first planarization layer 81 and the second planarization layer 82, so as to reduce the probability that the organic glue at the via hole cannot be completely exposed to light and the residual organic glue exists, and the probability of poor contact between the lower electrode 51 of the organic light emitting unit 5 and the source S or drain D of the emission control transistor 41 is reduced.
Illustratively, the organic light emitting display panel may be formed as follows: forming the driving line layer 2 of the organic light emitting display panel, forming the first planarization layer 81, forming the first via hole 91 in the first planarization layer 81, the connection segment 71 and the support segment 72 of the connection structure 7 may be integrally molded, forming the connection structure 7 and the shielding structure 6, forming the second planarization layer 82, forming the second via hole 92 in the second planarization layer 82, forming the lower electrode 51, the light emitting layer 52, and the upper electrode 53 of the organic light emitting unit 5.
Alternatively, as shown in fig. 1, a contact area between the lower electrode 51 and the supporting segment 72 may be set smaller than an area of the supporting segment 72 on a side facing the lower electrode 51, a contact area between the lower electrode 51 and the supporting segment 72 is an area of a lower surface of the lower electrode 51 in fig. 1, an area of the supporting segment 72 on a side facing the lower electrode 51 is an area of an upper surface of the supporting segment 72 in fig. 1, a material forming the second planarization layer 82 is generally an organic glue, and a contact area between the lower electrode 51 and the supporting segment 72 is set smaller than an area of the supporting segment 72 on a side facing the lower electrode 51, so that the first via 91 can be effectively prevented from exceeding a region where the supporting segment 72 is located and contacting the second planarization layer 82, and the contact between the lower electrode 51 and the connection structure 7 is poor.
Fig. 2 is a schematic circuit structure diagram of a pixel driving circuit according to an embodiment of the present invention. As shown in fig. 2, the pixel driving circuit may include first to seventh transistors T1 to T7 and a storage capacitor C11, a gate G of the first transistor T1 being electrically connected to the second scan signal input terminal Sn-1, a first pole b2 being electrically connected to the reference voltage signal input terminal Vinit, a second pole b3 being electrically connected to a first pole a of the storage capacitor C11; a gate G of the second transistor T2 is electrically connected to the second scan signal input terminal Sn-1, a first pole b2 is electrically connected to the reference voltage signal input terminal Vinit, and a second pole b3 is electrically connected to the lower electrode 51 of the organic light emitting unit 5; a gate G of the third transistor T3 is electrically connected to the first scan signal input terminal Sn, a first pole b2 is electrically connected to the data signal input terminal Vdata, and a second pole b3 is electrically connected to the first pole b2 of the seventh transistor T7; a gate G of the fourth transistor T4 is electrically connected to the first scan signal input terminal Sn, a first pole b2 is electrically connected to a second pole b3 of the seventh transistor T7, and a second pole b3 is electrically connected to a gate G of the seventh transistor T7; the gate G of the fifth transistor T5 is electrically connected to the enable signal input end En, the first pole b2 is connected to the first power signal input end VDD, and the second pole b3 is electrically connected to the first pole b2 of the driving transistor 4220; the gate G of the sixth transistor T6 is electrically connected to the enable signal input end En, the first electrode b2 is electrically connected to the second electrode b3 of the seventh transistor T7, the second electrode b3 is electrically connected to the lower electrode 51 of the organic light emitting unit 5, the first electrode a of the storage capacitor C11 is electrically connected to the gate G of the seventh transistor T7, the second electrode b is electrically connected to the first power signal input end VDD, and the upper electrode 53 of the organic light emitting element is electrically connected to the second power signal input end VSS. Here, the sixth transistor T6 is the light-emitting control transistor 41 in the pixel driving circuit, and the source S or the drain D of the light-emitting control transistor 41, and here, it is illustrated that the second electrode b3 of the light-emitting control transistor 41 is electrically connected to the lower electrode 51 of the organic light-emitting unit 5.
It should be noted that, in the embodiment of the present invention, the number of the thin film transistors and the number of the capacitor structures in the pixel driving circuit are not limited, and the number of the thin film transistors and the number of the capacitor structures in the pixel driving circuit may be limited according to specific requirements.
Alternatively, the first via 91 and the second via 92 may be arranged to be offset in a direction perpendicular to the substrate 1. Fig. 3 is a schematic projection diagram of a first via hole and a second via hole according to an embodiment of the present invention, and with reference to fig. 1 and fig. 3, because the thickness of a metal film layer where a support section 72 of a connection structure 7 is located is much smaller than the thickness of a first planarization layer 81, in an actual product of an organic light emitting display panel, the formed connection structure 7 is not a plane as an upper surface shown in fig. 1, but a recessed structure is also formed at a first via hole 91, the first via hole 91 and a second via hole 92 are arranged to be misaligned, a non-overlapping area a and an overlapping area B exist between the first via hole 91 and the second via hole 92, the via depth of the area a is smaller than that of the area B, the coaxial arrangement of the first via hole 91 and the second via hole 92 is favorable for reducing the probability that an organic glue remains in the non-overlapping area EA between the first via hole 91 and the second via hole 92, and a lower electrode 51 of an organic light emitting unit 5 can realize support with the connection structure 7 mainly by means of the non-overlapping area a between the Electrical connection of the segments 72.
Optionally, the first via 91 and the second via 92 may be coaxially disposed along a direction perpendicular to the substrate 1, and along the direction perpendicular to the substrate 1, a first cross section of the second via 92 adjacent to the first via 91 covers a second cross section of the first via 91 adjacent to the second via 92, where the first cross section is a cross section of a lower surface of the second via 92 in fig. 1, the second cross section is a cross section of an upper surface of the first via 91 in fig. 1, and an area of the first cross section is larger than an area of the second cross section. Fig. 4 is a schematic projection diagram of another first via and second via provided by an embodiment of the present invention, and referring to fig. 1 and fig. 4, where the cross-sectional areas refer to cross-sectional areas along a direction parallel to the substrate 1, and also because the thickness of the metal film layer where the support section 72 of the connection structure 7 is located is much smaller than the thickness of the first planarization layer 81, in an actual product of the organic light emitting display panel, the connection structure 7 is formed not planar on the upper surface as shown in fig. 1, but a concave structure is also formed at the first via 91, the first via 91 and the second via 92 are arranged coaxially along a direction perpendicular to the substrate 1, in the direction perpendicular to the substrate 1, a first cross-section of the second via 92 adjacent to the first via 91 covers a second cross-section of the first via 91 adjacent to the second via 92, and the area of the first cross-section is larger than the area of the second cross-section, the depth of the via hole of the region D is smaller than that of the via hole of the region E0, and the lower electrode 51 of the organic light emitting unit 5 can be electrically connected to the support segment 72 of the connection structure 7 by mainly depending on the region D. The shapes of the first via hole 91 and the second via hole 92 are not limited in the embodiment of the present invention.
With reference to fig. 1 and fig. 2, the connection structure 7 is electrically connected to the source S or the drain D of the emission control transistor 41 through the first via 91 penetrating through the first planarizing layer 81, the thickness of the first planarizing layer 81 is greater than or equal to 1.8 μm and less than or equal to 2.5 μm, that is, the relative positions of the first via 91 and the first via 91 may not be limited, and the depth of the first via 91 is adjusted by adjusting the thickness of the first planarizing layer 81 to reduce the probability of organic glue residue as much as possible, so as to further reduce the probability of poor contact between the lower electrode 51 of the organic light emitting unit 5 and the source S or the drain D of the emission control transistor 41.
Alternatively, the driver wiring layer may be provided to further include a first power supply signal line and a second power supply signal line, both of which are electrically connected to the pixel driver circuit, and referring to fig. 2, the pixel driver circuit may be electrically connected to the first power supply signal line through a first power supply signal input terminal VDD and to the second power supply signal line through a second power supply signal input terminal VSS, the first power supply signal line and the second power supply signal line may be used to supply power supply signals of different potential levels to the pixel driver circuit, and the shielding structure may be provided to be electrically connected to the first power supply signal line or the second power supply signal line. Specifically, the potential of the power signal on the first power signal line or the second power signal line is constant, and the shielding structure is arranged to be electrically connected with the first power signal line or the second power signal line, that is, the shielding structure is connected to the constant potential signal, so that a parasitic capacitance formed by the gate of the thin film transistor having an overlapping region with the lower electrode and the lower electrode of the organic light emitting unit is effectively shielded, and thus, the change of the potential on the lower electrode 51 of the organic light emitting unit 5 does not cause the change of the potential on the gate G of the thin film transistor 4 having an overlapping region E with the lower electrode 51, and the problem of influencing the service life of the organic light emitting display panel is effectively avoided.
As shown in fig. 1, the shielding structure 6 may have a thickness of 400nm or more and 600nm or less in a direction perpendicular to the plane of the substrate 1. When the shielding structure 6 is electrically connected to the first power signal line, the shielding structure 6 may serve as a resistor connected in parallel to the first power signal line, the thickness of the shielding structure 6 is set to be greater than or equal to 400nm and less than or equal to 600nm, the thickness of the shielding structure 6 may be increased as much as possible while satisfying the manufacturing process of the shielding structure 6, so as to reduce the resistance of the shielding structure 6, reduce the load resistance of the first power signal line, reduce the voltage drop on the first power signal line, and increase the magnitude of the driving current Id flowing through the organic light emitting unit 5 in proportion to the level value of the power signal reaching the lower electrode 51 of the organic light emitting unit 5. Exemplarily, as shown in fig. 2, the pixel driving circuit is connected to the reference voltage signal through a reference voltage signal line, the reference voltage signal line is electrically connected to the reference voltage signal input terminal Vinit, and the shielding structure 6 may also be electrically connected to the reference voltage signal line.
As shown in fig. 1, a plurality of thin film transistors 4 including the driving transistor 42 may be provided, and the lower electrode 51 and the gate electrode G of the driving transistor 42 have an overlap region E in a direction perpendicular to the substrate 1. The driving circuit layer 2 further includes a metal structure 10, and the film layer of the metal structure 10 is located between the gate G of the driving transistor 42 and the lower electrode 51. The driving wiring layer 2 further includes a first power supply signal line electrically connected to the pixel driving circuit for supplying a power supply signal of a high potential to the pixel driving circuit, and the metal structure 10 is electrically connected to the first power supply signal line and forms a storage capacitor with the gate G of the driving transistor 42.
With reference to fig. 1 and fig. 2, the seventh transistor T7 in the pixel driving circuit is the driving transistor 42, the pixel driving circuit is electrically connected to the first power signal line through the first power signal input terminal VDD, the first pole a of the storage capacitor C11 is electrically connected to the gate G of the driving transistor 42, the gate G of the driving transistor 42 can serve as the lower plate, i.e., the first pole a, of the storage capacitor C11 in the pixel driving circuit 2, the metal structure 10 can serve as the upper plate, i.e., the second pole b, of the storage capacitor C11, the upper plate, i.e., the second pole b, of the storage capacitor C11 needs to be electrically connected to the first power signal line, so the metal structure 10 can be disposed to be electrically connected to the first power signal line.
Alternatively, as shown in fig. 1, the metal structure 10 covers the first region E1 of the gate G of the driving transistor 42 and exposes the second region E2 of the gate G of the driving transistor 42 in a direction perpendicular to the substrate 1, and the shielding structure 6 may be disposed to cover at least the second region E2 of the gate G of the driving transistor 42. The first region E1 is provided with the metal structure 10, so that no parasitic capacitance is formed between the gate G of the driving transistor 42 provided corresponding to the first region E1 and the lower electrode 51 of the organic light emitting unit 5, the gate G of the driving transistor 42 provided corresponding to the second region E2 is opposed to the lower electrode 51 of the organic light emitting unit 5, a parasitic capacitance is formed, the shielding structure 6 is provided to cover at least the second region E2 of the gate G of the driving transistor 42, the parasitic capacitance formed between the lower electrode 51 of the organic light emitting unit 5 provided corresponding to the second region E2 and the gate G of the driving transistor 42 is shielded by the shielding structure 6 to which a fixed potential signal is applied, a change in the potential on the lower electrode 51 of the organic light emitting unit 5 does not cause a change in the potential on the gate G of the driving transistor 42 provided corresponding to the second region E2, and a change in the potential on the gate G of the driving transistor 42 is not caused, the problems that the increase of the electric potential on the grid electrode G of the driving transistor 42 reduces the driving current generated by the driving transistor 42, the display brightness of the organic light-emitting display panel is reduced, and the service life of the organic light-emitting display panel is influenced are effectively solved.
For example, the organic light emitting display panel may be a top emission device or a bottom emission device, and when the organic light emitting display panel is a bottom emission device, the shielding structure may be set to be a transparent structure, so that the shielding structure is enabled to shield a parasitic capacitance between a gate of the thin film transistor and a lower electrode of the organic light emitting unit, where an overlapping region exists between the shielding structure and the lower electrode, and the shielding structure is prevented from affecting transmittance of light.
It should be noted that the drawings of the embodiments of the present invention only show the sizes of the film layers and the structures by way of example, and do not represent the actual sizes of the film layers and the structures in the organic light emitting display panel.
The organic light-emitting display panel provided by the embodiment of the invention comprises a substrate, a driving circuit layer and an organic light-emitting device layer, wherein the driving circuit layer is positioned on the substrate, the organic light-emitting device layer is positioned on one side, far away from the substrate, of the driving circuit layer, the driving circuit layer is provided with a plurality of pixel driving circuits, each pixel driving circuit comprises a plurality of thin film transistors, and the organic light-emitting device layer is provided with a plurality of organic light-emitting units. The organic light-emitting units are arranged in one-to-one correspondence with the pixel driving circuits, each organic light-emitting unit comprises a lower electrode, a light-emitting layer and an upper electrode which are sequentially arranged along the direction away from the substrate, and the lower electrode and the grid electrode of at least one thin film transistor in the plurality of thin film transistors have an overlapping area along the direction perpendicular to the substrate. The organic light emitting display panel further comprises a shielding structure positioned between the driving circuit layer and the lower electrode, the shielding structure is connected with a fixed potential, the shielding structure is arranged in at least a part of an overlapping area to shield a parasitic capacitance between a grid electrode of the thin film transistor and the lower electrode, so that the potential change on the lower electrode of the organic light-emitting unit does not cause the potential change on the grid electrode of the thin film transistor in the overlapped area with the lower electrode, thereby avoiding the influence of the potential change on the lower electrode of the organic light-emitting unit on the display effect of the organic light-emitting display panel, and the lower electrode of the organic light-emitting unit is electrically connected with the source electrode or the drain electrode of at least one thin film transistor through the connecting structure, and the projection of the connecting structure and the shielding structure on the substrate is not overlapped, so that the problem of poor contact between the lower electrode of the organic light-emitting unit and the source electrode or the drain electrode of the corresponding thin film transistor is solved.
Fig. 5 is a schematic structural diagram of an organic light emitting display device according to an embodiment of the present invention. As shown in fig. 5, the organic light emitting display device 101 includes the organic light emitting display panel 102 in the above embodiment, so that the organic light emitting display device 101 provided in the embodiment of the present invention also has the beneficial effects described in the above embodiment, and further description is omitted here. The organic light emitting display device may be an electronic device such as a mobile phone, a computer, or a wearable device, and the embodiment of the present invention does not limit the specific form of the organic light emitting display device.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (9)
1. An organic light emitting display panel, comprising:
a substrate;
the organic light-emitting device comprises a driving circuit layer and an organic light-emitting device layer, wherein the driving circuit layer is positioned on the substrate, the organic light-emitting device layer is positioned on one side, far away from the substrate, of the driving circuit layer, the driving circuit layer is provided with a plurality of pixel driving circuits, each pixel driving circuit comprises a plurality of thin film transistors, and the organic light-emitting device layer is provided with a plurality of organic light-emitting units;
the organic light-emitting units are arranged in one-to-one correspondence with the pixel driving circuits, each organic light-emitting unit comprises a lower electrode, a light-emitting layer and an upper electrode which are sequentially arranged along the direction far away from the substrate, and an overlapping area exists between the lower electrode and the grid electrode of at least one thin film transistor in the plurality of thin film transistors along the direction vertical to the substrate;
the shielding structure is arranged in at least part of the overlapping area so as to shield parasitic capacitance between the grid electrode of the thin film transistor and the lower electrode;
the lower electrode is electrically connected with a source electrode or a drain electrode of at least one thin film transistor in the plurality of thin film transistors through a connecting structure, and the projection of the connecting structure and the projection of the shielding structure on the substrate do not overlap;
the plurality of thin film transistors comprise light-emitting control transistors, and the lower electrodes are electrically connected with the source electrodes or the drain electrodes of the light-emitting control transistors through the connecting structures;
a first planarization layer is formed between the driving circuit layer and the shielding structure, and a first through hole exposing the source electrode or the drain electrode of the light-emitting control transistor is formed on the first planarization layer; the connection structure comprises a connection section which is formed in the first through hole and electrically connected with the source electrode or the drain electrode of the light-emitting control transistor, and a support section which is positioned on the first planarization layer and electrically connected with the connection section; the supporting section and the shielding structure are arranged on the same layer;
the plurality of thin film transistors comprise driving transistors, and the lower electrodes and the grid electrodes of the driving transistors have overlapped areas along the direction vertical to the substrate.
2. The organic light-emitting display panel according to claim 1, wherein a second planarization layer is formed between the shielding structure and the organic light-emitting device layer, a second via hole exposing the connection structure is formed on the second planarization layer, and the lower electrode extends into the second via hole to be electrically connected to the support segment.
3. The organic light-emitting display panel according to claim 2, wherein a contact area of the lower electrode with the support section is smaller than an area of a side of the support section facing the lower electrode.
4. The organic light-emitting display panel according to claim 3, wherein the first via hole and the second via hole are arranged in a staggered manner in a direction perpendicular to the substrate.
5. The organic light-emitting display panel according to claim 3, wherein the first via and the second via are coaxially arranged in a direction perpendicular to the substrate, wherein a first cross section of the second via adjacent to the first via covers a second cross section of the first via adjacent to the second via in the direction perpendicular to the substrate, and wherein an area of the first cross section is larger than an area of the second cross section.
6. The organic light-emitting display panel according to claim 1, wherein the driver circuit layer further comprises a first power supply signal line and a second power supply signal line, the first power supply signal line and the second power supply signal line are electrically connected to the pixel driver circuit, the first power supply signal line and the second power supply signal line are used for supplying power supply signals with different potential levels to the pixel driver circuit, and the shielding structure is electrically connected to the first power supply signal line or the second power supply signal line.
7. The organic light-emitting display panel according to claim 1, wherein the driving circuit layer further comprises a metal structure, and the film layer on which the metal structure is located between the gate electrode of the driving transistor and the lower electrode;
the driving line layer further includes a first power signal line electrically connected to the pixel driving circuit, the first power signal line being configured to supply a power signal of a high potential to the pixel driving circuit, and the metal structure being electrically connected to the first power signal line and forming a storage capacitor with a gate of the driving transistor.
8. The organic light-emitting display panel according to claim 7, wherein the metal structure covers a first region of the gate electrode of the driving transistor and exposes a second region of the gate electrode of the driving transistor in a direction perpendicular to the substrate, and the shielding structure covers at least the second region of the gate electrode of the driving transistor.
9. An organic light emitting display device comprising the organic light emitting display panel according to any one of claims 1 to 8.
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| US20220231113A1 (en) * | 2020-04-02 | 2022-07-21 | Kunshan Go-Visionox Opto-Electronics Co., Ltd | Display panel and display apparatus |
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| CN110188744B (en) * | 2019-05-28 | 2020-06-16 | 昆山国显光电有限公司 | Display panel and display device |
| CN110246885B (en) * | 2019-06-28 | 2021-10-01 | 上海天马有机发光显示技术有限公司 | Display panel |
| CN110600520A (en) * | 2019-09-19 | 2019-12-20 | 昆山工研院新型平板显示技术中心有限公司 | Display panel and display device |
| CN111833720B (en) * | 2020-01-13 | 2021-08-31 | 昆山国显光电有限公司 | Display panel and display device |
| CN111128080B (en) * | 2020-03-30 | 2020-08-04 | 京东方科技集团股份有限公司 | Display substrate and display device |
| WO2022061546A1 (en) * | 2020-09-22 | 2022-03-31 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel, and display device |
| CN112271205A (en) * | 2020-11-06 | 2021-01-26 | 武汉华星光电半导体显示技术有限公司 | Display device and electronic apparatus |
| CN112542447B (en) * | 2020-12-02 | 2023-08-22 | 合肥维信诺科技有限公司 | Display panel and display device |
| EP4123717A4 (en) * | 2021-02-20 | 2023-07-05 | BOE Technology Group Co., Ltd. | Display panel and display device |
| CN113629071B (en) * | 2021-07-22 | 2023-09-26 | 武汉华星光电技术有限公司 | Array substrate and display panel |
| CN117643191A (en) * | 2022-06-29 | 2024-03-01 | 京东方科技集团股份有限公司 | Display substrate and display device |
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| WO2013108326A1 (en) * | 2012-01-17 | 2013-07-25 | パナソニック株式会社 | Thin film transistor array apparatus and el display apparatus using same |
| KR20170035064A (en) * | 2015-09-22 | 2017-03-30 | 엘지디스플레이 주식회사 | Organic light emitting diode panel and organic light emitting diode display and manufacturing method thereof |
| KR102391421B1 (en) * | 2016-01-28 | 2022-04-28 | 삼성디스플레이 주식회사 | Display apparatus |
| KR20180018960A (en) * | 2016-08-12 | 2018-02-22 | 삼성디스플레이 주식회사 | Display device |
| CN108010944A (en) * | 2017-11-28 | 2018-05-08 | 武汉天马微电子有限公司 | A kind of array base palte and display device |
| CN108597374B (en) * | 2018-04-20 | 2021-02-02 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| CN108878494B (en) * | 2018-06-29 | 2020-12-04 | 上海天马有机发光显示技术有限公司 | Organic light emitting display panel and display device |
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| US20220231113A1 (en) * | 2020-04-02 | 2022-07-21 | Kunshan Go-Visionox Opto-Electronics Co., Ltd | Display panel and display apparatus |
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