CN109696716B - Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film - Google Patents

Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film Download PDF

Info

Publication number
CN109696716B
CN109696716B CN201910037555.6A CN201910037555A CN109696716B CN 109696716 B CN109696716 B CN 109696716B CN 201910037555 A CN201910037555 A CN 201910037555A CN 109696716 B CN109696716 B CN 109696716B
Authority
CN
China
Prior art keywords
film
zns
ybf
layer
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910037555.6A
Other languages
Chinese (zh)
Other versions
CN109696716A (en
Inventor
张建付
陶忠
昌明
杨崇民
刘永强
李明伟
米高园
王松林
师建涛
刘青龙
王颖辉
陈朝平
郭鸿香
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian institute of Applied Optics
Original Assignee
Xian institute of Applied Optics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian institute of Applied Optics filed Critical Xian institute of Applied Optics
Priority to CN201910037555.6A priority Critical patent/CN109696716B/en
Publication of CN109696716A publication Critical patent/CN109696716A/en
Application granted granted Critical
Publication of CN109696716B publication Critical patent/CN109696716B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The invention provides a film system structure of a super-wide angle laser and long-wave infrared dual-waveband high-strength antireflection film, which consists of a zinc sulfide substrate and an antireflection film system; the antireflection film is formed by overlapping film layers prepared by four film materials; the number of the film layers is 19 in total, from the zinc sulfide substrate, the 1 st layer is hafnium oxide, the odd layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer; the multispectral zinc sulfide optical window can realize high transmission of 1.064 mu m laser and 7.5 mu m-10.0 mu m long-wave infrared light within an ultra-wide angle range of 0-76 degrees, is firm in film layer, has high strength, can meet the application requirements of the multispectral zinc sulfide optical window of a radar stealth high-speed weapon platform through severe environmental tests such as wind tunnel, sand dust, rain, salt fog, damp and hot, temperature impact and the like in the GJB 150-2009 standard of China military, and can be applied to the stealth optical window of a multiband common optical path optical system of a high-speed weapon platform such as stealth airborne, stealth ship-borne and the like.

Description

Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film
Technical Field
The invention belongs to the technical field of optical thin films, and particularly relates to a film system structure of a super-wide angle laser and long-wave infrared dual-waveband high-strength antireflection film.
Background
With the rapid development of modern advanced military optical systems, the working distance is longer and longer, the working precision is higher and higher, and meanwhile, in order to ensure the operational capability of weapon systems in severe environments, the requirements of optical windows on environmental adaptability are more and more strict. Particularly, when an airplane flies at a high speed, the window can be impacted by raindrops, sand and dust, winged insects, hailstones and the like at a high speed. If the surface of the optical window is damaged or destroyed, the action distance and the action precision of the whole photoelectric system can be affected, and even the whole photoelectric system is completely paralyzed. The multispectral zinc sulfide optical window of the radar stealth high-speed weapon platform with the functions of infrared search tracking, laser ranging and the like has high transmittance in a super-wide angle range for laser and long-wave infrared, and simultaneously faces high-speed impact such as raindrops, sand and dust and the like, so that the working environment is extremely severe. Although zinc sulfide has excellent spectral performance, zinc sulfide belongs to a brittle material and cannot meet the requirement of bearing corrosion of severe environment, so that an antireflection film on the surface of a window not only has high transmittance of an operating waveband, but also has high enough strength to protect a zinc sulfide window from being damaged by the environment.
When light enters the window at a large angle, a serious polarization effect is generated, so that the transmittance of the window is greatly reduced. Due to the fact that the working wavelength span is very large, the selectable thin film materials are very limited, great difficulty is brought to the design of the film system, and meanwhile, due to the fact that the structure of the film system is complex, the number of layers is large, the total thickness is large, stress accumulation can bring negative effects to the bonding force of the film layer and the substrate.
For a film system structure of a ZnS substrate with 1.064 mu m laser and 7.5-10.0 mu m long-wave infrared high-strength two-waveband antireflection film in an ultra-wide angle range of 0-76 degrees, no relevant literature report is found at present. According to the new research, the similar documents have the invention patent of 'a ZnS substrate antireflection film with a 1064nm optical band and a large incident angle between 8 mu m and 10 mu m and a ZnS optical window' filed in 2011 by a grid set and the like. The author in the patent utilizes 6-layer film composed of ZnS and YbF3 materials to realize that the transmission rate of laser light of 1.064 mu m is 78% -97% in the incident angle range of 30-70 degrees, the transmission rate of laser light of 8-10 mu m in the long-wave infrared band is 74.5% -97%, and the transmission rate of laser light of 1.064 mu m and the transmission rate of long-wave infrared band are lower in large incident angle. ZnS and YbF3 belong to common materials in infrared thin film materials, have low absorption at a working waveband, but both the materials belong to soft materials and cannot bear environmental tests such as sand dust, salt mist, damp heat, temperature impact and the like in GJB 150-2009 in the national military standard at all; the range of incidence angles in the patent is much smaller and the index requirements are relatively low.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a film system structure of a super-wide angle laser and long-wave infrared dual-band high-strength antireflection film based on a multispectral zinc sulfide substrate, which can realize high transmission of 1.064 mu m laser and 7.5-10.0 mu m long-wave red light within a super-wide angle range of 0-76 degrees, is firm in film layer, has high strength, can meet the application requirements of a multispectral zinc sulfide optical window of a radar stealth high-speed weapon platform through severe environmental tests such as wind tunnels, sand dust, rain, salt fog, damp heat, temperature impact and the like in the GJB 150-2009 standard, and can be applied to a stealth optical window of a multiband common optical path optical system of a high-speed weapon platform such as a stealth aircraft carrier, a stealth carrier and the like.
The technical scheme of the invention is as follows:
the film system structure of ultra wide angle laser, long wave infrared dual waveband antireflection coating that excels in, its characterized in that: the anti-reflection coating consists of a zinc sulfide substrate and an anti-reflection coating system; the antireflection film is formed by overlapping film layers prepared by four film materials; the number of the film layers is 19 in total, from the zinc sulfide substrate, the 1 st layer is hafnium oxide, the odd layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer; the thickness of each film layer is as follows:
Figure GDA0002715008840000021
Figure GDA0002715008840000031
further preferred scheme, a membrane system structure of ultra wide angle laser, long wave infrared dual band antireflection coating that excels in, its characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm)
1 HfO2 200
2 ZnS 194.8
3 YbF3 65.2
4 ZnS 49.1
5 YbF3 119.3
6 ZnS 335.6
7 YbF3 89.4
8 ZnS 300.1
9 YbF3 157.5
10 ZnS 112.7
11 YbF3 78.2
12 ZnS 45
13 YbF3 254.9
14 ZnS 1227.6
15 YbF3 774.3
16 ZnS 10.4
17 YbF3 369.7
18 ZnS 54
19 Si3N4 204
。
Further preferred scheme, a membrane system structure of ultra wide angle laser, long wave infrared dual band antireflection coating that excels in, its characterized in that: the thickness of each film layer is as follows:
Figure GDA0002715008840000032
Figure GDA0002715008840000041
further preferred scheme, a membrane system structure of ultra wide angle laser, long wave infrared dual band antireflection coating that excels in, its characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm)
1 HfO2 200.1
2 ZnS 194.6
3 YbF3 65.1
4 ZnS 49.3
5 YbF3 119.4
6 ZnS 335.4
7 YbF3 89.5
8 ZnS 300.0
9 YbF3 157.4
10 ZnS 112.6
11 YbF3 78.2
12 ZnS 44.9
13 YbF3 254.7
14 ZnS 1227.7
15 YbF3 774.2
16 ZnS 10.5
17 YbF3 369.8
18 ZnS 54.1
19 Si3N4 203.9
。
Further preferred scheme, a membrane system structure of ultra wide angle laser, long wave infrared dual band antireflection coating that excels in, its characterized in that: the thickness of each film layer is as follows:
Figure GDA0002715008840000042
Figure GDA0002715008840000051
further preferred scheme, a membrane system structure of ultra wide angle laser, long wave infrared dual band antireflection coating that excels in, its characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm)
1 HfO2 199.2
2 ZnS 193.9
3 YbF3 65.8
4 ZnS 49.4
5 YbF3 120.1
6 ZnS 336.2
7 YbF3 89.7
8 ZnS 301.0
9 YbF3 156.7
10 ZnS 112.1
11 YbF3 78.7
12 ZnS 45.3
13 YbF3 255.4
14 ZnS 1226.9
15 YbF3 774.8
16 ZnS 10.3
17 YbF3 369.1
18 ZnS 53.7
19 Si3N4 204.8
。
Further preferred scheme, a membrane system structure of ultra wide angle laser, long wave infrared dual band antireflection coating that excels in, its characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm)
1 HfO2 199.3
2 ZnS 194.1
3 YbF3 66.1
4 ZnS 49.4
5 YbF3 119.7
6 ZnS 334.9
7 YbF3 89.1
8 ZnS 300.7
9 YbF3 156.9
10 ZnS 112.1
11 YbF3 78.5
12 ZnS 45.1
13 YbF3 255.6
14 ZnS 1227.5
15 YbF3 774.3
16 ZnS 10.1
17 YbF3 370.3
18 ZnS 54.2
19 Si3N4 203.7
。
Advantageous effects
The invention adopts two film materials of zinc sulfide and ytterbium fluoride which have relatively high hardness and strength, good stress matching and relatively low absorption in laser and long-wave infrared bands to form a multilayer film system.
Because the surface of the zinc sulfide optical window is provided with the radar stealth metal mesh, a complex surface with the zinc sulfide medium surface and the metal surface alternating and the metal surface higher than the zinc sulfide medium surface is formed, the protruding metal mesh can damage the optical film micro crystal lattice attached to the complex surface to form the film crystal lattice defect, and the adhesive force and the environment adaptability of the film are generally reduced. Therefore, a transition layer technology is needed, and the selected transition layer material has strong bonding force with the surface of a zinc sulfide medium, the surface of metal and a multilayer film formed by two film materials of zinc sulfide and ytterbium fluoride. Through process verification and screening, the applicant finds that the hafnium oxide film can form good stress matching between the zinc sulfide substrate and the multilayer film and between the metal mesh grid and the multilayer film, and the firmness of the hafnium oxide film is enough to make up for the negative influence of the protruding metal mesh grid on the firmness of the optical film and the environmental adaptability, so that the hafnium oxide is finally adopted as the transition layer, the adhesive force between the film layer and the substrate and between the film layer and the metal mesh grid are obviously improved, and the risk of film layer falling or cracking caused by film layer stress accumulation is solved.
Because the zinc sulfide stealth optical window is mainly applied to a high-speed weapon platform, high transmission is required to be realized within the range of 0-76 degrees for laser and long-wave infrared, and meanwhile, the zinc sulfide stealth optical window can be frequently subjected to high-speed impact of raindrops, sand dust, mosquitoes and the like, and the conventional high-strength film can not meet the requirement, a material with higher strength is required to be used as a protective layer of a film system. The Knoop hardness of the silicon nitride film can reach 2200, the microhardness is 32630MPa, and the silicon nitride film belongs to a superhard substance, and has high thermal stability, high chemical stability and strong oxidation resistance. Tests prove that the film can form good stress matching and refractive index matching with a multilayer film formed by zinc sulfide and ytterbium fluoride, the film is firmly combined with the multilayer film, and the whole film system formed by the film has excellent spectral performance. The silicon nitride is selected as the protective layer of the film system, so that the strength of the film layer can be obviously improved, and the adaptability of the film layer to severe environments such as wind tunnel, sand dust, damp heat, salt fog, rain, high-temperature storage, low-temperature storage, temperature impact and the like is greatly improved.
The refractive index optimal matching between the substrate and the film system and between the film system and the atmosphere within the range of 0-76 degrees is realized by adopting an ultrathin layer technology, the negative influence of the polarization effect on the transmittance under the condition of large-angle incidence is effectively reduced, the window transmittance is greatly improved, the total thickness of the film layer is reduced, the difficulty of the film layer plating process is reduced, and the control precision of the film layer thickness is relatively improved. In the range of 0-76 degrees, the laser transmittance of 1.064 mu m is 98.9-81.1 percent (see figure 2), and the long-wave infrared average transmittance of 7.5-10.0 mu m is 98.0-81.5 percent (see figure 3). And can withstand 3.4.1.1 adhesion tests, 3.4.1.3 moderate friction tests and 3.4.2.1 high and low temperature storage tests in GJB 2485-95, and air tunnel, sand dust, damp and hot, salt fog, rain, high temperature storage, low temperature storage and temperature impact environment tests in GJB 150-.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a film system structure schematic diagram of a 1.064 μm laser and 7.5 μm-10.0 μm long-wave infrared dual-band high-strength antireflection film with a ZnS substrate incident at an ultra-wide angle of 0-76 deg.
FIG. 2 and FIG. 3 are transmittance curves of a ZnS substrate in example 1 of the present invention for a 1.064 μm laser with an ultra-wide angle of 0-76 ° incident and for a 7.5 μm-10.0 μm long-wavelength infrared two-band high-strength antireflection film;
a, B, C, D, E, F, G shows the test results of 0 °, 20 °, 40 °, 50 °, 60 °, 70 °, and 76 °, respectively.
FIG. 4 and FIG. 5 are transmittance curves of example 2 of the present invention;
in the figure, A1, B1, C1, D1, E1, F1 and G1 are respectively the test results of 0 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 70 degrees and 76 degrees.
FIG. 6 and FIG. 7 are transmittance curves of example 3 of the present invention;
in the figure, A2, B2, C2, D2, E2, F2 and G2 are respectively the test results of 0 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 70 degrees and 76 degrees.
FIG. 8 and FIG. 9 are transmittance curves of example 4 of the present invention;
in the figure, A3, B3, C3, D3, E3, F3 and G3 are respectively the test results of 0 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 70 degrees and 76 degrees.
FIG. 10 and FIG. 11 are transmittance curves of example 5 of the present invention;
in the figure, A4, B4, C4, D4, E4, F4 and G4 are respectively the test results of 0 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 70 degrees and 76 degrees.
FIG. 12 and FIG. 13 are transmittance curves of example 6 of the present invention;
in the figure, A5, B5, C5, D5, E5, F5 and G5 are respectively the test results of 0 degrees, 20 degrees, 40 degrees, 50 degrees, 60 degrees, 70 degrees and 76 degrees.
Detailed Description
The following detailed description of embodiments of the invention is intended to be illustrative, and not to be construed as limiting the invention.
Example 1:
in the embodiment, the film system structure of the 1.064 μm laser and 7.5 μm-10.0 μm long-wave infrared dual-band high-strength antireflection film with the ZnS substrate incident at the ultra-wide angle of 0-76 degrees consists of a zinc sulfide substrate and an antireflection film system. The antireflection film is formed by overlapping film layers prepared from four film materials. Wherein, the first film layer from inside to outside is hafnium oxide and is plated on the surface of the zinc sulfide substrate; the second film layer is zinc sulfide and is plated on the first film layer; the third film layer is made of ytterbium fluoride and is plated on the second film layer; a fourth film layer is zinc sulfide and is plated on the third film layer, … …, the zinc sulfide film layer and the ytterbium fluoride film layer are alternated to an eighteenth film layer; and the nineteenth film layer is silicon nitride and is plated on the eighteenth film layer. The antireflection film system comprises 19 film layers, wherein the number of the film layers is 19, the 1 st layer is a hafnium oxide film layer, the odd number layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even number layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer.
The thicknesses of the first to nineteenth film layers are shown in table one.
TABLE thickness of each layer of example 1
Number of layers of film Film material Film thickness (nm)
1 HfO2 200
2 ZnS 194.8
3 YbF3 65.2
4 ZnS 49.1
5 YbF3 119.3
6 ZnS 335.6
7 YbF3 89.4
8 ZnS 300.1
9 YbF3 157.5
10 ZnS 112.7
11 YbF3 78.2
12 ZnS 45
13 YbF3 254.9
14 ZnS 1227.6
15 YbF3 774.3
16 ZnS 10.4
17 YbF3 369.7
18 ZnS 54
19 Si3N4 204
The film system structure is mainly applied to a multispectral zinc sulfide optical window of a radar stealth high-speed weapon platform with the functions of infrared search tracking, laser ranging guidance and the like, realizes high transmission of laser and long-wave infrared within an ultra-wide angle range of 0-76 degrees, and is a key device for directly determining the performance of the whole system. As shown in FIGS. 2 and 3, the laser transmittance of 1.064 μm is 98.9-81.1%, and the long-wave infrared average transmittance of 7.5-10.0 μm is 98.0-81.5% in the range of 0-76 deg. And can withstand 3.4.1.1 adhesion tests, 3.4.1.3 moderate friction tests and 3.4.2.1 high and low temperature storage tests in GJB 2485-95, and air tunnel, sand dust, damp and hot, salt fog, rain, high temperature storage, low temperature storage and temperature impact environment tests in GJB 150-.
Example 2:
the substrate adopts multispectral zinc sulfide, and the antireflection film is formed by overlapping film layers prepared from four film materials. Wherein, the first film layer from inside to outside is hafnium oxide and is plated on the surface of the zinc sulfide substrate; the second film layer is zinc sulfide and is plated on the first film layer; the third film layer is made of ytterbium fluoride and is plated on the second film layer; a fourth film layer is zinc sulfide and is plated on the third film layer, … …, the zinc sulfide film layer and the ytterbium fluoride film layer are alternated to an eighteenth film layer; and the nineteenth film layer is silicon nitride and is plated on the eighteenth film layer. The antireflection film system comprises 19 film layers, wherein the number of the film layers is 19, the 1 st layer is a hafnium oxide film layer, the odd number layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even number layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer. The thicknesses of the first through nineteenth film layers are shown in table two.
TABLE 2 example 2 thickness of each layer
Number of layers of film Film material Film thickness (nm)
1 HfO2 199.6
2 ZnS 194.9
3 YbF3 65.4
4 ZnS 49.0
5 YbF3 119.1
6 ZnS 335.8
7 YbF3 89.5
8 ZnS 300.1
9 YbF3 157.4
10 ZnS 112.5
11 YbF3 78.1
12 ZnS 45.2
13 YbF3 254.7
14 ZnS 1227.5
15 YbF3 774.4
16 ZnS 10.4
17 YbF3 369.9
18 ZnS 54.1
19 Si3N4 204.2
The film is obtained by testing, the laser transmittance of 1.064 mu m is 98.92-81.14%, and the long-wave infrared average transmittance of 7.5-10.0 mu m is 98.04-81.81% in the range of 0-76 deg. See fig. 4 and 5.
Example 3:
the substrate adopts multispectral zinc sulfide, and the antireflection film is formed by overlapping film layers prepared from four film materials. Wherein, the first film layer from inside to outside is hafnium oxide and is plated on the surface of the zinc sulfide substrate; the second film layer is zinc sulfide and is plated on the first film layer; the third film layer is made of ytterbium fluoride and is plated on the second film layer; a fourth film layer is zinc sulfide and is plated on the third film layer, … …, the zinc sulfide film layer and the ytterbium fluoride film layer are alternated to an eighteenth film layer; and the nineteenth film layer is silicon nitride and is plated on the eighteenth film layer. The antireflection film system comprises 19 film layers, wherein the number of the film layers is 19, the 1 st layer is a hafnium oxide film layer, the odd number layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even number layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer. The thicknesses of the first to nineteenth film layers are shown in table three.
TABLE III EXAMPLE 3 thickness of each layer
Number of layers of film Film material Film thickness (nm)
1 HfO2 200.1
2 ZnS 194.6
3 YbF3 65.1
4 ZnS 49.3
5 YbF3 119.4
6 ZnS 335.4
7 YbF3 89.5
8 ZnS 300.0
9 YbF3 157.4
10 ZnS 112.6
11 YbF3 78.2
12 ZnS 44.9
13 YbF3 254.7
14 ZnS 1227.7
15 YbF3 774.2
16 ZnS 10.5
17 YbF3 369.8
18 ZnS 54.1
19 Si3N4 203.9
The film is obtained by testing, the laser transmittance of 1.064 mu m is 98.95-81.14%, and the long-wave infrared average transmittance of 7.5-10.0 mu m is 98.03-81.78% in the range of 0-76 degrees, see fig. 6 and 7.
Example 4:
the substrate adopts multispectral zinc sulfide, and the antireflection film is formed by overlapping film layers prepared from four film materials. Wherein, the first film layer from inside to outside is hafnium oxide and is plated on the surface of the zinc sulfide substrate; the second film layer is zinc sulfide and is plated on the first film layer; the third film layer is made of ytterbium fluoride and is plated on the second film layer; a fourth film layer is zinc sulfide and is plated on the third film layer, … …, the zinc sulfide film layer and the ytterbium fluoride film layer are alternated to an eighteenth film layer; and the nineteenth film layer is silicon nitride and is plated on the eighteenth film layer. The antireflection film system comprises 19 film layers, wherein the number of the film layers is 19, the 1 st layer is a hafnium oxide film layer, the odd number layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even number layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer. The thicknesses of the first through nineteenth film layers are shown in table four.
TABLE IV EXAMPLE 4 thickness of each layer
Number of layers of film Film material Film thickness (nm)
1 HfO2 200.5
2 ZnS 194.4
3 YbF3 65.5
4 ZnS 48.7
5 YbF3 119.6
6 ZnS 335.2
7 YbF3 89.7
8 ZnS 300.2
9 YbF3 157.9
10 ZnS 112.2
11 YbF3 79.0
12 ZnS 45.4
13 YbF3 255.3
14 ZnS 1227.0
15 YbF3 774.1
16 ZnS 10.7
17 YbF3 368.8
18 ZnS 54.3
19 Si3N4 203.2
The film layer is obtained by testing, wherein the laser transmittance of 1.064 mu m is 98.94-81.15%, and the long-wave infrared average transmittance of 7.5-10.0 mu m is 98.01-81.58% within the range of 0-76 degrees, as shown in fig. 8 and 9.
Example 5:
the substrate adopts multispectral zinc sulfide, and the antireflection film is formed by overlapping film layers prepared from four film materials. Wherein, the first film layer from inside to outside is hafnium oxide and is plated on the surface of the zinc sulfide substrate; the second film layer is zinc sulfide and is plated on the first film layer; the third film layer is made of ytterbium fluoride and is plated on the second film layer; a fourth film layer is zinc sulfide and is plated on the third film layer, … …, the zinc sulfide film layer and the ytterbium fluoride film layer are alternated to an eighteenth film layer; and the nineteenth film layer is silicon nitride and is plated on the eighteenth film layer. The antireflection film system comprises 19 film layers, wherein the number of the film layers is 19, the 1 st layer is a hafnium oxide film layer, the odd number layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even number layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer. The thicknesses of the first through nineteenth film layers are shown in table five.
Table five thickness of each layer of example 5
Figure GDA0002715008840000121
Figure GDA0002715008840000131
The film layer is obtained by testing, wherein the laser transmittance of 1.064 mu m is 98.93-81.16%, and the long-wave infrared average transmittance of 7.5-10.0 mu m is 98.04-81.72% within the range of 0-76 degrees, as shown in fig. 10 and fig. 11.
Example 6:
the substrate adopts multispectral zinc sulfide, and the antireflection film is formed by overlapping film layers prepared from four film materials. Wherein, the first film layer from inside to outside is hafnium oxide and is plated on the surface of the zinc sulfide substrate; the second film layer is zinc sulfide and is plated on the first film layer; the third film layer is made of ytterbium fluoride and is plated on the second film layer; a fourth film layer is zinc sulfide and is plated on the third film layer, … …, the zinc sulfide film layer and the ytterbium fluoride film layer are alternated to an eighteenth film layer; and the nineteenth film layer is silicon nitride and is plated on the eighteenth film layer. The antireflection film system comprises 19 film layers, wherein the number of the film layers is 19, the 1 st layer is a hafnium oxide film layer, the odd number layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even number layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer. The thicknesses of the first through nineteenth film layers are shown in table six.
TABLE sixty examples 6 film thicknesses for each layer
Figure GDA0002715008840000132
Figure GDA0002715008840000141
The film layer is obtained by testing, wherein the laser transmittance of 1.064 mu m is 98.95-81.13%, and the long-wave infrared average transmittance of 7.5-10.0 mu m is 98.02-81.64% within the range of 0-76 degrees, as shown in fig. 12 and fig. 13.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention.

Claims (7)

1. The utility model provides a membrane system structure of ultra wide angle laser, infrared dual waveband of long wave antireflection coating that excels in which characterized in that: the anti-reflection coating consists of a zinc sulfide substrate and an anti-reflection coating system; the antireflection film is formed by overlapping film layers prepared by four film materials; the number of the film layers is 19 in total, from the zinc sulfide substrate, the 1 st layer is hafnium oxide, the odd layers from the 2 nd layer to the 18 th layer are ytterbium fluoride film layers, the even layers are zinc sulfide film layers, and the 19 th layer is a silicon nitride film layer; the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm) 1 HfO2 199.2～200.5 2 ZnS 193.9～194.9 3 YbF3 65.1～66.1 4 ZnS 48.7～49.4 5 YbF3 119.1～120.1 6 ZnS 334.9～336.2 7 YbF3 89.1～89.7 8 ZnS 300～301 9 YbF3 156.7～157.9 10 ZnS 112.1～112.7 11 YbF3 78.1～79 12 ZnS 44.9～45.4 13 YbF3 254.7～255.6 14 ZnS 1226.9～1227.7 15 YbF3 774.1～774.8 16 ZnS 10.1～10.7 17 YbF3 368.8～370.3 18 ZnS 53.7～54.3 19 Si3N4 203.2～204.8
The film system structure is used for manufacturing a multispectral zinc sulfide optical window with a radar stealth metal mesh grid in a radar stealth high-speed weapon platform, and realizes high transmission of 1.064 mu m laser and 7.5 mu m-10.0 mu m long-wave infrared light within an ultra-wide angle range of 0-76 degrees.
2. The film system structure of ultra-wide angle laser, long wave infrared dual-band high-strength antireflection film of claim 1, characterized in that: the thickness of each film layer is as follows:
Figure FDA0002626382130000011
Figure FDA0002626382130000021
3. the film system structure of ultra-wide angle laser, long wave infrared dual-band high-strength antireflection film of claim 1, characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm) 1 HfO2 199.6 2 ZnS 194.9 3 YbF3 65.4 4 ZnS 49.0 5 YbF3 119.1 6 ZnS 335.8 7 YbF3 89.5 8 ZnS 300.1 9 YbF3 157.4 10 ZnS 112.5 11 YbF3 78.1 12 ZnS 45.2 13 YbF3 254.7 14 ZnS 1227.5 15 YbF3 774.4 16 ZnS 10.4 17 YbF3 369.9 18 ZnS 54.1 19 Si3N4 204.2
。
4. The film system structure of ultra-wide angle laser, long wave infrared dual-band high-strength antireflection film of claim 1, characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm) 1 HfO2 200.1 2 ZnS 194.6 3 YbF3 65.1 4 ZnS 49.3 5 YbF3 119.4 6 ZnS 335.4 7 YbF3 89.5 8 ZnS 300.0 9 YbF3 157.4 10 ZnS 112.6 11 YbF3 78.2 12 ZnS 44.9 13 YbF3 254.7 14 ZnS 1227.7 15 YbF3 774.2 16 ZnS 10.5 17 YbF3 369.8 18 ZnS 54.1 19 Si3N4 203.9
。
5. The film system structure of ultra-wide angle laser, long wave infrared dual-band high-strength antireflection film of claim 1, characterized in that: the thickness of each film layer is as follows:
Figure FDA0002626382130000031
Figure FDA0002626382130000041
6. the film system structure of ultra-wide angle laser, long wave infrared dual-band high-strength antireflection film of claim 1, characterized in that: the thickness of each film layer is as follows:
number of layers of film Film material Film thickness (nm) 1 HfO2 199.2 2 ZnS 193.9 3 YbF3 65.8 4 ZnS 49.4 5 YbF3 120.1 6 ZnS 336.2 7 YbF3 89.7 8 ZnS 301.0 9 YbF3 156.7 10 ZnS 112.1 11 YbF3 78.7 12 ZnS 45.3 13 YbF3 255.4 14 ZnS 1226.9 15 YbF3 774.8 16 ZnS 10.3 17 YbF3 369.1 18 ZnS 53.7 19 Si3N4 204.8
。
7. The film system structure of ultra-wide angle laser, long wave infrared dual-band high-strength antireflection film of claim 1, characterized in that: the thickness of each film layer is as follows:
Figure FDA0002626382130000042
Figure FDA0002626382130000051
CN201910037555.6A 2019-01-15 2019-01-15 Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film Active CN109696716B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910037555.6A CN109696716B (en) 2019-01-15 2019-01-15 Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910037555.6A CN109696716B (en) 2019-01-15 2019-01-15 Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film

Publications (2)

Publication Number Publication Date
CN109696716A CN109696716A (en) 2019-04-30
CN109696716B true CN109696716B (en) 2020-12-04

Family

ID=66233981

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910037555.6A Active CN109696716B (en) 2019-01-15 2019-01-15 Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film

Country Status (1)

Country Link
CN (1) CN109696716B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111090134B (en) * 2019-11-21 2022-03-29 天津津航技术物理研究所 Chalcogenide glass substrate laser, medium-wave infrared and long-wave infrared composite antireflection film
CN111596387B (en) * 2020-06-02 2021-07-23 中国人民解放军火箭军工程大学 Multiband compatible intelligent optical camouflage material based on gas-liquid control
CN112346160B (en) * 2020-10-20 2023-02-21 中国人民解放军国防科技大学 Nonmetal visible light laser infrared multiband compatible stealth film and preparation method thereof
CN113341487A (en) * 2021-06-03 2021-09-03 河南平原光电有限公司 ZnSe substrate 10.3-10.9 mu m high-strength antireflection film and plating method
CN115494565B (en) * 2022-09-15 2023-05-05 安徽光智科技有限公司 Laser-protected infrared antireflection film, preparation method and application
CN115469452A (en) * 2022-10-26 2022-12-13 西安应用光学研究所 Design method of ultra-wide cut-off band 50nm wide-band-pass rectangular wave band-pass filter film

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102338892B (en) * 2011-09-29 2013-11-13 中国航空工业集团公司洛阳电光设备研究所 Anti-reflection film with ZnS as substrate and large incidence angle at optical bands of 1064nm and 8-10mum and ZnS optical window
CN105839058B (en) * 2016-04-05 2019-05-14 中国建筑材料科学研究总院 The method of zinc sulphide matrix surface plating diamond film and vulcanization zine plate with diamond-film-like
CN105842857B (en) * 2016-04-28 2018-04-03 西安应用光学研究所 A kind of anti-0.5~0.8 μm of visible ray of ZnS substrates and the film structure of 1.064 μm of laser and saturating 3.7~4.8 μm of medium-wave infrared dichroic coatings
CN106768352B (en) * 2016-11-25 2019-11-26 中国科学院上海技术物理研究所 A kind of infrared narrow-band radiated source and preparation method thereof
CN206990839U (en) * 2017-06-29 2018-02-09 中国建筑材料科学研究总院 Sulphur system optical element with capability of electromagnetic shielding

Also Published As

Publication number Publication date
CN109696716A (en) 2019-04-30

Similar Documents

Publication Publication Date Title
CN109696716B (en) Film system structure of ultra-wide angle laser, long wave infrared dual-waveband high-strength antireflection film
US5425983A (en) Infrared window protected by multilayer antireflective coating
CN110275228B (en) Stealth film and preparation method thereof
US20110096391A1 (en) Broadband reflecting mirror
CN108287377B (en) Infrared protection and anti-laser detection compatible photonic crystal composite film
CN103293581A (en) Laser and intermediate and far infrared compatible invisible membrane structure
CN101846756A (en) MgF2/oxide composite membrane used for anti-reflection of glass surface
CN112346160A (en) Nonmetal visible light laser infrared multiband compatible stealth film and preparation method thereof
KR102042404B1 (en) Infra-red control optical film
CN112363263B (en) Metal-dielectric type laser infrared multiband compatible stealth film and preparation method thereof
CN114002763A (en) Middle-far infrared and laser compatible stealth film and design scheme thereof
CN103317792B (en) Non-vacuum high-temperature solar selective absorption periodic coating and preparation method thereof
Welser et al. Broadband nanostructured antireflection coating on glass for photovoltaic applications
KR101117707B1 (en) Film and glass for adjusting transmittance of light, and glass for window
AU699028B2 (en) Durable visible/laser/medium wave infrared composite window
CN111007584B (en) Design method of oxide system infrared anti-reflection protective film
CN108515743B (en) Metal/medium ultra-wideband absorption film and preparation method thereof
CN108196332B (en) Medium wave infrared reflection filtering film capable of filtering carbon dioxide infrared absorption interference
JP2007264353A (en) Wavelength selective thin film
CN117021700A (en) Inorganic radiation refrigeration visual window with excellent spectrum selectivity
CN109828324B (en) Film system structure of wide-angle laser high-strength antireflection film with efficient radar wave shielding function
CN105824061A (en) Film system structure of magnesium fluoride mid-wave infrared optical window high-intensity protection film
CN115755258A (en) Medium-far infrared broadband high-transmittance infrared window and preparation method thereof
CN115201941A (en) High-efficiency infrared wide-spectrum antireflection film suitable for space environment
CN114030586B (en) Infrared stealth composite material structure of high-speed aircraft

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant