CN109687058A - The airtight grade microwave switch module structure of Ka full frequency band - Google Patents
The airtight grade microwave switch module structure of Ka full frequency band Download PDFInfo
- Publication number
- CN109687058A CN109687058A CN201811591437.1A CN201811591437A CN109687058A CN 109687058 A CN109687058 A CN 109687058A CN 201811591437 A CN201811591437 A CN 201811591437A CN 109687058 A CN109687058 A CN 109687058A
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- Prior art keywords
- switch module
- frequency band
- microwave switch
- module structure
- full frequency
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- 239000012212 insulator Substances 0.000 claims abstract description 33
- 238000005192 partition Methods 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
Abstract
The invention discloses a kind of airtight grade microwave switch module structures of Ka full frequency band, including being equipped with the radio circuit of bare chip and being equipped with the feed driving circuit of non-bare chip, feed insulator, shell, partition, inner cover plate and laser capping plate；Wherein, the inside of shell is divided into epicoele and cavity of resorption by partition；Radio circuit be set to it is intracavitary, feed driving circuit be set to down it is intracavitary；One end of feed insulator is connected to radio circuit, and the other end passes through partition and is connected to feed driving circuit, and is provided with sealing solder on the position that feed insulator passes through partition；Inner cover plate and laser capping plate are successively stacked in the top of epicoele, epicoele is fully sealed.The airtight grade microwave switch module structure of the Ka full frequency band has ensured the hermetic properties of module, increases the reliability of module, while having the characteristics that working band is wide, small in size.
Description
Technical field
The present invention relates to microwave and millimeter wave technical fields, and in particular, to a kind of airtight grade microwave switch of Ka full frequency band
Modular structure.
Background technique
In recent years, frequency microwave industry development is rapid, be mainly reflected in radar system, mobile phone terminal, intelligence control system,
The fields such as Communications Market, so that demand of the people to the radio-frequency front-end of high integration, high-performance and low cost is more urgent, microwave
Switch is the key element of radio-frequency front-end, and performance directly affects the performance of radio frequency system.
By the structure and specific implementation means of switch module, the air-tightness of bare chip is sufficiently ensured, to ensure
The high reliability of module.
Summary of the invention
The object of the present invention is to provide a kind of airtight grade microwave switch module structure of Ka full frequency band, the Ka full frequency band is airtight
Grade microwave switch module structure has ensured the hermetic properties of module, increases the reliability of module.
To achieve the goals above, the present invention provides a kind of airtight grade microwave switch module knots of Ka all band frequency range
Structure, the airtight grade microwave switch module structure of the Ka full frequency band include being equipped with the radio circuit of bare chip and being equipped with non-naked core
The feed driving circuit of piece, the airtight grade microwave switch module structure of the Ka full frequency band further include: feed insulator, shell, every
Plate, inner cover plate and laser cover plate；Wherein, the inside of the shell is divided into epicoele and cavity of resorption by the partition；It is described to penetrate
Frequency circuit be set to it is described intracavitary, the feed driving circuit be set to it is described under it is intracavitary；One end of the feed insulator
It is connected to the radio circuit, the other end passes through the partition and is connected to the feed driving circuit, and wears in feed insulator
It crosses on the position of the partition and is provided with sealing solder；The inner cover plate and laser capping plate are successively stacked in the upper of the epicoele
Side, the epicoele is fully sealed.
Preferably, it is respectively arranged with 3 through-holes in the two side walls of the epicoele, RF isolation is corresponded and is welded
In the through-hole, the through-hole is fully sealed.
Preferably, RF isolation is RF isolation with airtight grade.
Preferably, the airtight grade microwave switch module structure of the Ka full frequency band further include: lower cover plate, the lower cover plate lid close
In the top of the cavity of resorption, to be closed the opening of the cavity of resorption
Preferably, 10 sunk screw mounting holes are provided in the inner cover plate；4 screws are provided on the lower cover plate
Mounting hole；The inner cover plate and lower cover plate are installed on the shell by sunk screw.
Preferably, be inwardly provided with step in the marginal position of the epicoele, and the inner cover plate and laser capping plate according to
It is secondary to be stacked in the step, realize fixing seal.
Preferably, the airtight grade microwave switch module structure of the Ka full frequency band further include: feedthrough capacitor, earthing rod and TTL
Insulator；Wherein, the feedthrough capacitor and TTL insulator are both electrically connected in the feed driving circuit, and earthing rod is directly fixed
On shell.
Preferably, the feedthrough capacitor is fixed on the first of the side wall of the shell, third screw hole, and the earthing rod is solid
Due on the second screw hole of the shell, the TTL insulator is fixed on the 4th screw hole of the shell.
Preferably, the material of the laser capping plate is aluminium.
Preferably, four corners of the inner cover plate and the lower cover plate are rounding corner structure.
According to the above technical scheme, the present invention is based on microelectronics group encapsulation technology Method of Spreading Design, the wide, body with working band
The small feature of product, while soldering and sealing is carried out using package sealing with laser mode, it has ensured the hermetic properties of module, has increased the reliable of module
Property.Laser capping plate and shell epicoele are sealed welding using laser welding apparatus by the present invention, to realize shell epicoele
It is completely isolated with ambient atmosphere, it is final to realize the closed of radio circuit space, it ensure that the air-tightness requirement of bare chip.
Other features and advantages of the present invention will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 a is the contour structures front signal for illustrating the airtight grade microwave switch module of a kind of Ka full frequency band of the invention
Figure；
Fig. 1 b is the contour structures side signal for illustrating the airtight grade microwave switch module of a kind of Ka full frequency band of the invention
Figure；
Fig. 1 c is the contour structures back side signal for illustrating the airtight grade microwave switch module of a kind of Ka full frequency band of the invention
Figure；
Fig. 2 a is the shell Facad structure signal for illustrating the airtight grade microwave switch module of a kind of Ka full frequency band of the invention
Figure；
Fig. 2 b is the housing side structural representation for illustrating the airtight grade microwave switch module of a kind of Ka full frequency band of the invention
Figure；
Fig. 2 c is the back side of shell structural representation for illustrating the airtight grade microwave switch module of a kind of Ka full frequency band of the invention
Figure；
Fig. 3 a is the front dress for illustrating a kind of radio circuit of the airtight grade microwave switch module of Ka full frequency band of the invention
With schematic diagram；
Fig. 3 b be illustrate the airtight grade microwave switch module of a kind of Ka full frequency band of the invention feed driving circuit (without
Sub-miniature A connector) back side assembling schematic diagram；
Fig. 4 a is to illustrate that a kind of inner cover plate of the airtight grade microwave switch module radio circuit of Ka full frequency band of the invention is shown
It is intended to；
Fig. 4 b is the laser capping for illustrating the airtight grade microwave switch module radio circuit of a kind of Ka full frequency band of the invention
Plate assembling schematic diagram；And
Fig. 4 c is the lower cover for illustrating a kind of airtight grade microwave switch module feed driving circuit of Ka full frequency band of the invention
Plate assembling schematic diagram.
Description of symbols
1, shell；2, inner cover plate；3, laser covers plate；4, lower cover plate；5, SMA connector；6, feedthrough capacitor；7, it is grounded
Column；8, TTL insulator；9, RF isolation；10, insulator is fed；11, radio circuit；12, driving circuit is fed；A, epicoele；
B, cavity of resorption；C, fixed arm；D, insulator mounting hole is fed；E, the sub- mounting hole of RF isolation；F, TTL insulator mounting hole；G, spiral shell
Nail hole；H, screw hole；I, feedthrough capacitor mounting hole；J, earthing rod mounting hole k.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
In the present invention, in the absence of explanation to the contrary, the noun of locality be included in the term " up and down " etc. is only
Represent orientation of the term under normal service condition, or be those skilled in the art understand that be commonly called as, and be not construed as to this
The limitation of term.
The present invention provides a kind of airtight grade microwave switch module structure of Ka full frequency band, the airtight grade microwave of the Ka full frequency band
Switch module structure includes the radio circuit 11 for being equipped with bare chip and the feed driving circuit 12 for being equipped with non-bare chip, the Ka
The airtight grade microwave switch module structure of full frequency band further include: feed insulator 10, shell 1, partition, inner cover plate 2 and laser envelope
Cover board 3；Wherein, the inside of the shell 1 is divided into epicoele and cavity of resorption by the partition；The radio circuit 11 is set to institute
State it is intracavitary, the feed driving circuit 12 be set to it is described under it is intracavitary；One end of the feed insulator 10 is connected to described
Radio circuit 11, the other end passes through the partition and is connected to the feed driving circuit 12, and passes through institute in feed insulator 10
It states and is provided with sealing solder on the position of partition；The inner cover plate 2 and laser capping plate 3 are successively stacked in the upper of the epicoele
Side, the epicoele is fully sealed.
According to the above technical scheme, the present invention is based on microelectronics group encapsulation technology Method of Spreading Design, the wide, body with working band
The small feature of product, while soldering and sealing is carried out using package sealing with laser mode, it has ensured the hermetic properties of module, has increased the reliable of module
Property.It is emphasized that the side of package sealing with laser may be implemented in the airtight grade microwave switch module structure of Ka full frequency band of the invention
Formula carries out soldering and sealing, avoids leaking into for atmosphere, also can guarantee the normal work of circuit additionally by multiple insulators of design, no
Influence the use of device.
In a kind of specific embodiment of the invention, in order to realize the use of circuit, in the two side walls of the epicoele
3 through-holes are respectively arranged with, RF isolation 9 is corresponded and is welded in the through-hole, the through-hole is fully sealed.It is logical
Crossing above-mentioned mode has made radio circuit 11 can also continue to work, in addition nor affects on the requirement of the air-tightness needed for it.
In a kind of specific embodiment of the invention, RF isolation 9 is the RF isolation with airtight grade
Son 9.The air-tightness of radio circuit 11 can be allowed more preferable using above-mentioned RF isolation 9, worked more normal.
In a kind of specific embodiment of the invention, the airtight grade microwave switch module structure of the Ka full frequency band can be with
It include: lower cover plate 4, the lower cover plate 4 is covered on the top of the cavity of resorption, to be closed the opening of the cavity of resorption.
By above-mentioned embodiment, the lid that lower cover plate 4 may be implemented is closed, and can make the structure of whole device more
It is firm.
In this embodiment, 10 sunk screw mounting holes are provided in the inner cover plate 2；On the lower cover plate 4
It is provided with 4 screw mounting holes；The inner cover plate 2 and lower cover plate 4 are installed on the shell 1 by sunk screw.
By above-mentioned mode, the installation that inner cover plate 2 may be implemented is fixed, it is therefore prevented that the shaking of inner cover plate 2.
In a kind of specific embodiment of the invention, step, and institute are inwardly provided in the marginal position of the epicoele
It states inner cover plate 2 and laser capping plate 3 is successively stacked in the step, realize fixing seal.
Leakproofness can be further improved by above-mentioned mode, it is ensured that the air-tightness of device.
In a kind of specific embodiment of the invention, the airtight grade microwave switch module structure of the Ka full frequency band is also wrapped
Include: fixed arm, the fixed arm are set to the two sides of the shell 1, for fixing.
In a kind of specific embodiment of the invention, the airtight grade microwave switch module structure of the Ka full frequency band is also wrapped
It includes: feedthrough capacitor 6, earthing rod 7 and TTL insulator 8；Wherein, the feedthrough capacitor 6 and TTL insulator 8 are both electrically connected in described
Driving circuit 12 is fed, earthing rod 7 is directly anchored on shell 1.
In a kind of specific embodiment of the invention, two feedthrough capacitors 6 are individually fixed in the side of the shell 1
On first screw hole of wall, third screw hole, the earthing rod 7 is fixed on the second screw hole of the shell 1, the TTL insulator 8
It is fixed on the 4th screw hole of the shell 1.
In a kind of specific embodiment of the invention, the material of the laser capping plate 3 is aluminium.
In a kind of specific embodiment of the invention, four corners of the inner cover plate 2 and the lower cover plate 4 are rounding
Angle processing.
In a kind of specific embodiment of the invention, as shown in attached drawing 1a- Fig. 1 c and attached drawing 4a- Fig. 4 c, the present invention
The airtight grade microwave switch module structure of a kind of Ka full frequency band includes: shell 1, inner cover plate 2, laser capping plate 3, lower cover
Plate 4, SMA connector 5, feedthrough capacitor 6, earthing rod 7, TTL insulator 8, RF isolation 9 feed insulator 10, radio circuit
11, feed driving circuit 12.
As shown in Fig. 4, shell 1 is equipped with epicoele a and cavity of resorption b, epicoele a and cavity of resorption b and separates and open by intermediate partition
The edge of mouth has been inwardly formed installation step；
3 feed insulators 10 are welded on the feed in 1 upper and lower cavity of shell in a and b using specific packaging technology and insulate
At 10 mounting hole d of son, to realize the airtight sexual isolation of upper and lower cavity；
2 RF isolation 9 are welded at the 9 mounting hole e of RF isolation of the lower wall of shell 1, another 1 RF isolation
At the 9 mounting hole e of RF isolation for the upper side wall that son 9 is welded on shell 1；
Radio circuit 11 is assemblied in the epicoele a of shell 1 by microwave assembly technology technology, is insulated with corresponding 3 feeds
One end welding of son 10, while being welded with one end of corresponding 3 RF isolation 9；
Feed driving circuit 12 is fixed by screws in the cavity of resorption b of shell 1, feeds insulator 10 with corresponding 3
Other end welding, while being welded with one end of 2 feedthrough capacitors 6, TTL insulator 8；；
It is corresponding that corresponding 3 SMA radio frequency connectors by spring washer, screw, gasket are separately fixed at 1 top and bottom sidewall of shell
At screw hole；
2 feedthrough capacitors 6 are by the screw threads for fastening of the screw hole i of 1 lower wall of shell on shell 1；1 earthing rod 7 passes through
Screw threads for fastening is at the screw hole j of the lower wall of shell 1；1 TTL insulator 8 is welded at the screw hole f of the lower wall of shell 1；
The lid of inner cover plate 2 is located on the epicoele a of shell 1, and is fixed at screw hole h by 10 sunk screws, and the laser capping lid of plate 3 is set
Above inner cover plate 2, the sealing with 1 edge step of shell is completed using Laser seal welding；Lower cover plate 4 is placed on 1 cavity of resorption b's of shell
Open-mouth, and be connected and fixed by 4 sunk screws with the screw hole at step；The left and right sides of shell 1 is equipped with symmetrical 2
Fixed arm c, each fixed arm are equipped with through-hole, installation, fixation for entire module；The material that shell 1 is selected is aluminium 6061,
It is handled using parcel plating, gold-plated processing is used in upper and lower cavity, true qualities oxidation processes are used other than upper and lower cavity；Inner cover plate 2 and under
Four corners of cover board 4 are all made of round corner treatment, and the material of selection is aluminium 6061, using true qualities oxidation processes；Laser capping
3 the selection of material of plate is aluminium 4047, using true qualities oxidation processes.
The circuit of bare chip involved in the present invention is radio circuit 11, and is related to the circuit of non-bare chip for feed driving electricity
Road 12, in order to realize that module minimizes feature, by the assembly of radio circuit 11 in the epicoele a of shell 1, by feed and driving circuit
It is assemblied in the cavity of resorption b of shell 1；
There are 3 through-holes between the epicoele a and cavity of resorption b of shell 1, and the feed insulator 10 with airtight grade is utilized weldering
Material is welded in 3 through-holes, to realize the upper and lower chamber cavity isolation of shell 1；
The upper and lower side wall of the epicoele of shell 1 is equipped with 3 through-holes, and RF isolation 9 with airtight grade is utilized solder
It is welded in 3 through-holes, to realize 1 epicoele of shell and the outer air insulated of upper and lower side wall；
Laser capping plate 3 and 1 epicoele of shell are sealed welding using laser welding apparatus, to realize on shell 1
Chamber and ambient atmosphere it is completely isolated, it is final to realize the closed of 11 space of radio circuit, ensure that the air-tightness requirement of bare chip.
The requirement of module air-tightness mainly for for bare chip, in order to guarantee chip can in closed space it is steady
Fixed work, it is free from the influence of the external environment, to reach the requirement of high reliability.
It is described the prefered embodiments of the present invention in detail above in conjunction with attached drawing, still, the present invention is not limited to above-mentioned realities
The detail in mode is applied, within the scope of the technical concept of the present invention, a variety of letters can be carried out to technical solution of the present invention
Monotropic type, these simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (10)
1. a kind of airtight grade microwave switch module structure of Ka full frequency band, the airtight grade microwave switch module structure of the Ka full frequency band
Including being equipped with the radio circuit (11) of bare chip and being equipped with the feed driving circuit (12) of non-bare chip, which is characterized in that
The airtight grade microwave switch module structure of the Ka full frequency band further include: feed insulator (10), shell (1), partition, inner cover plate
(2) and laser covers plate (3)；Wherein, the inside of the shell (1) is divided into epicoele and cavity of resorption by the partition；It is described to penetrate
Frequency circuit (11) be set to it is described intracavitary, the feed driving circuit (12) be set to it is described under it is intracavitary；The feed insulation
The one end of sub (10) is connected to the radio circuit (11), and the other end passes through the partition and is connected to the feed driving circuit
(12), and on the position that feed insulator (10) passes through the partition it is provided with sealing solder；The inner cover plate (2) and laser
Capping plate (3) is successively stacked in the top of the epicoele, the epicoele is fully sealed.
2. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that the epicoele
Two side walls on be respectively arranged with 3 through-holes, RF isolation (9) is corresponded and is welded in the through-hole, with complete
Seal the through-hole.
3. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that the radio frequency
Insulator (9) is that the RF isolation with airtight grade is sub (9).
4. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that the Ka full range
The airtight grade microwave switch module structure of section further include: lower cover plate (4), the lower cover plate (4) are covered on the top of the cavity of resorption,
To be closed the opening of the cavity of resorption.
5. the airtight grade microwave switch module structure of Ka full frequency band according to claim 4, which is characterized in that the inner cover
10 sunk screw mounting holes are provided on plate (2)；4 screw mounting holes are provided on the lower cover plate (4)；The inner cover plate
(2) it is installed on the shell (1) with lower cover plate (4) by sunk screw.
6. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that on described
The marginal position of chamber is inwardly provided with step, and the inner cover plate (2) and laser capping plate (3) are successively stacked in the step
In, realize fixing seal.
7. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that the Ka full range
The airtight grade microwave switch module structure of section further include: feedthrough capacitor (6), earthing rod (7) and TTL insulator (8)；Wherein, institute
It states feedthrough capacitor (6) and TTL insulator (8) is both electrically connected in the feed driving circuit (12), earthing rod (7) is directly anchored to
On shell (1).
8. the airtight grade microwave switch module structure of Ka full frequency band according to claim 7, which is characterized in that described in two
Feedthrough capacitor (6) is fixed on correspondingly respectively on the first screw hole and third screw hole of the side wall of the shell (1), described to connect
Ground column (7) is fixed on the second screw hole of the shell (1), and the TTL insulator (8) is fixed on the 4th of the shell (1)
On screw hole.
9. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that the laser
The material for covering plate (3) is aluminium.
10. the airtight grade microwave switch module structure of Ka full frequency band according to claim 1, which is characterized in that in described
Four corners of cover board (2) and the lower cover plate (4) are rounding corner structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811591437.1A CN109687058A (en) | 2018-12-25 | 2018-12-25 | The airtight grade microwave switch module structure of Ka full frequency band |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811591437.1A CN109687058A (en) | 2018-12-25 | 2018-12-25 | The airtight grade microwave switch module structure of Ka full frequency band |
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| Publication Number | Publication Date |
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| CN109687058A true CN109687058A (en) | 2019-04-26 |
Family
ID=66189434
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| CN201811591437.1A Pending CN109687058A (en) | 2018-12-25 | 2018-12-25 | The airtight grade microwave switch module structure of Ka full frequency band |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987404A (en) * | 2020-08-13 | 2020-11-24 | 安徽蓝煜电子科技有限公司 | Substrate integrated waveguide antenna |
| CN113611990A (en) * | 2021-06-21 | 2021-11-05 | 北京无线电测量研究所 | PIN tube microwave switch module |
| CN117393985A (en) * | 2023-12-11 | 2024-01-12 | 成都华兴大地科技有限公司 | Airtight power synthesis device and implementation method |
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| CN113611990A (en) * | 2021-06-21 | 2021-11-05 | 北京无线电测量研究所 | PIN tube microwave switch module |
| CN113611990B (en) * | 2021-06-21 | 2022-09-23 | 北京无线电测量研究所 | PIN tube microwave switch module |
| CN117393985A (en) * | 2023-12-11 | 2024-01-12 | 成都华兴大地科技有限公司 | Airtight power synthesis device and implementation method |
| CN117393985B (en) * | 2023-12-11 | 2024-02-13 | 成都华兴大地科技有限公司 | Airtight power synthesis device and implementation method |
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