CN109686725B - Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof - Google Patents
Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN109686725B CN109686725B CN201910056882.6A CN201910056882A CN109686725B CN 109686725 B CN109686725 B CN 109686725B CN 201910056882 A CN201910056882 A CN 201910056882A CN 109686725 B CN109686725 B CN 109686725B
- Authority
- CN
- China
- Prior art keywords
- polysilicon
- area
- temperature coefficient
- resistance value
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention provides a positive temperature coefficient polysilicon resistor structure and a manufacturing method thereof, the resistor structure comprises a plurality of polysilicon unit resistors, each polysilicon unit resistor comprises a non-metalized polysilicon area with the resistance value changing in a negative temperature coefficient and a metalized polysilicon area with the resistance value changing in a positive temperature coefficient, wherein the resistance value of the non-metalized polysilicon area is in the middle area, the resistance value of the metalized polysilicon area is in the end area, and the adjacent polysilicon unit resistors are connected with a metal wire with the resistance value changing in the positive temperature coefficient through a contact hole formed in the end area. The manufacturing method adjusts the proportion of the non-metallized polysilicon area to the metallized polysilicon area, so that the positive variation of the resistance value of the metallized polysilicon area along with the temperature is larger than or equal to the negative variation of the resistance value of the non-metallized polysilicon area along with the temperature. The invention can avoid the limitation of the performance of a semiconductor device, and obtain the positive temperature coefficient polysilicon resistor structure with higher resistance value under the conditions of not increasing the process burden, ensuring the process stability of the device and not sacrificing the area.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a positive temperature coefficient polysilicon resistor structure and a manufacturing method thereof.
Background
Semiconductor resistor devices are one of the most widely used devices in semiconductor chip products, and the temperature characteristics of resistors are very important in product applications. The following resistances are commonly used. Resistors formed by using polysilicon material over a semiconductor substrate through oxide isolation are called polysilicon (Poly) resistors. Referring to fig. 14, the relationship between the diffusion resistance and the polysilicon resistance is as follows. Taking a P-type silicon substrate as an example, the P-type silicon substrate sequentially includes, from bottom to top, a P-type silicon substrate 301, an N-type diffusion region resistor 302, an oxide layer 303, and a polysilicon resistor 304, and certainly further includes a shallow trench isolation structure 305 formed at the periphery of the diffusion region resistor 302 on the silicon substrate 301, a first conductive pillar 306 connected to the diffusion region resistor 302, and a second conductive pillar 307 connected to the polysilicon resistor 304. Referring to fig. 15, the well resistor and the polysilicon resistor are located as follows. Taking a P-type silicon substrate as an example, the P-type silicon substrate sequentially includes, from bottom to top, a P-type silicon substrate 401, an N-type well resistor 402, a first shallow trench isolation structure 403, an oxide layer 404, and a polysilicon resistor 405, and certainly further includes a second shallow trench isolation structure 406 formed on the periphery of the well resistor 402 on the silicon substrate 401, an N-type heavily doped region 407 distributed at an end portion of the well resistor 402, a first conductive pillar 408 connected to the N-type heavily doped region 407, and a second conductive pillar 409 connected to the polysilicon resistor 405. In the diffusion region resistor and the well region resistor, the polysilicon resistor is not on the silicon substrate, but is separated from the silicon substrate by an oxide layer, so that the characteristics of the polysilicon resistor are better than those of a diffusion region (ACT) resistor and a well region (NWell) resistor, for example, the matching performance and the noise performance of the polysilicon resistor are better than those of the diffusion region resistor and the well region resistor. In addition, the general polysilicon resistor is divided into a non-metal (unsalicide) poly resistor and a metal (salicide) poly resistor, the former has a large resistance (hundreds or thousands, depending on different doping concentrations, but the whole is basically lightly doped), and the latter, the resistance is generally less than 10 ohm/square (ohm/sqr), so it is not practical even if it has a positive temperature coefficient. In the polysilicon resistor structure, the plan view structure of the polysilicon resistor is generally a rectangular shape, and an S shape, a spiral shape, and the like are formed on the basis of the rectangular shape. Fig. 1 is a schematic top view of a conventional rectangular non-metallized polysilicon resistor structure, and referring to fig. 1, a polysilicon resistor 10 has a rectangular shape with a length L and a width W, and includes a middle region 11 and end regions 12 at two ends, which are delimited by a virtual boundary line 20. The middle region 11 is the main part of the resistance, while the end regions 12 are only the connection parts created for the device connection. The polysilicon resistor 10 has a resistance value in the middle region 11 that is much larger than that in the end regions 12. In a certain polysilicon resistor 10, the resistance value of the end region 12 is constant, and the ratio of the end region 12 is determined by the overall length of the polysilicon resistor 10. Fig. 2 is a graph of resistance versus temperature for a polysilicon resistor structure. Fig. 2 shows a graph of resistance values of polysilicon resistor structures with three same number of blocks (No. of squre) and different widths W as a function of temperature, wherein the widths W of the resistors with the three same number of blocks are 2um, 5um and 10um respectively. Wherein the abscissa is a temperature value in units of deg.C, and the ordinate is a total resistance value of the polysilicon resistor structure in units of omega. Referring to fig. 2, due to the characteristics of the lightly doped polysilicon, the resistance has a negative temperature coefficient change, i.e., the resistance value changes in a downward trend as the temperature value increases. To obtain a ptc resistor structure with a higher resistance value, the ptc resistor structure is generally obtained by the above-mentioned diffusion region resistor or well region resistor process, which has the disadvantage of sacrificing precision or area, but when the critical dimension of the semiconductor device is limited or the requirement for the precision of the resistor is very strict, the polysilicon resistor structure with a ptc resistor cannot be obtained, so that the design is limited. Therefore, how to obtain a high-resistance ptc polysilicon resistor structure without increasing the process burden, ensuring the process stability of the device, and sacrificing the area is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to overcome the defects and provides a positive temperature coefficient polysilicon resistor structure and a manufacturing method thereof, so as to avoid the limitation of the performance of a semiconductor device and obtain the positive temperature coefficient polysilicon resistor structure with higher resistance value under the conditions of not increasing the process burden, ensuring the process stability of the device and not sacrificing the area.
In order to solve the above technical problem, the present invention provides a positive temperature coefficient polysilicon resistor structure, which includes a plurality of rectangular polysilicon unit resistors, each of the polysilicon unit resistors includes a non-metalized polysilicon region with a resistance value varying with a negative temperature coefficient in a middle region and a metalized polysilicon region with a resistance value varying with a positive temperature coefficient in end regions at two ends, wherein a positive variation of the resistance value of the metalized polysilicon region with temperature is greater than or equal to a negative variation of the resistance value of the non-metalized polysilicon region with temperature, and adjacent polysilicon unit resistors are connected to a metal line with a resistance value varying with a positive temperature coefficient through contact holes formed in the end regions.
Furthermore, according to the positive temperature coefficient polysilicon resistor structure provided by the invention, two ends of the positive temperature coefficient polysilicon resistor structure are electrically connected with the metal wire through the contact hole in the end part area and are led out to form the pin.
In order to solve the above technical problem, the present invention further provides a method for manufacturing a positive temperature coefficient polysilicon resistor structure, comprising the following steps:
forming a plurality of rectangular polysilicon unit resistors by using a polysilicon material, and dividing each polysilicon unit resistor into a middle area and end areas positioned at two ends of the middle area;
forming a non-metalized polysilicon area with the resistance value changing with a negative temperature coefficient in the middle area of each polysilicon unit resistor, forming a metalized polysilicon area with the resistance value changing with a positive temperature coefficient in the end area of each polysilicon unit resistor, and adjusting the proportion of the non-metalized polysilicon area to the metalized polysilicon area to ensure that the positive variation of the resistance value of the metalized polysilicon area along with the temperature is greater than or equal to the negative variation of the resistance value of the non-metalized polysilicon area along with the temperature;
and connecting the adjacent polysilicon unit resistors with the metal wire with the resistance value changing in positive temperature coefficient through the contact holes formed in the end part area to form the positive temperature coefficient polysilicon resistor structure with an integral structure.
Furthermore, the manufacturing method of the positive temperature coefficient polysilicon resistance structure provided by the invention adjusts the ratio of the non-metalized polysilicon area to the metalized polysilicon area by adjusting the length ratio of the middle area to the end area of the polysilicon unit resistor.
Furthermore, the manufacturing method of the positive temperature coefficient polysilicon resistor structure provided by the invention divides each polysilicon unit resistor into a middle region and end regions at two ends by the metal silicide barrier layer covered on each polysilicon unit resistor, wherein the boundary line between the end regions and the middle region is a contact interface.
Further, in the manufacturing method of the positive temperature coefficient polysilicon resistor structure provided by the invention, the metal silicide barrier layer is more than one of silicon nitride, silicon oxide and silicon oxynitride.
Furthermore, the manufacturing method of the positive temperature coefficient polysilicon resistor structure provided by the invention uses the metal silicide barrier layer covered on each polysilicon unit resistor as a mask, so that a non-metalized polysilicon region with the resistance value changing in a negative temperature coefficient is formed in the covered middle region, and a metalized polysilicon region with the resistance value changing in a positive temperature coefficient is formed in the exposed end region.
Furthermore, the manufacturing method of the positive temperature coefficient polysilicon resistance structure provided by the invention forms the metalized polysilicon area with the resistance value changing in positive temperature coefficient by depositing the metal silicide in the exposed end area.
Further, in the method for manufacturing the positive temperature coefficient polysilicon resistor structure provided by the invention, the metal silicide is more than one of nickel silicide, cobalt silicide, tungsten silicide, tantalum silicide, titanium silicide, platinum silicide, erbium silicide and palladium silicide.
Further, in the manufacturing method of the positive temperature coefficient polysilicon resistance structure provided by the invention, the polysilicon material is P-type doped or N-type doped polysilicon.
The positive temperature coefficient polysilicon resistance structure and the manufacturing method thereof divide the traditional one-block polysilicon resistance structure into a plurality of small polysilicon unit resistors in rectangular shapes, then, by arranging the non-metalized polysilicon area with negative temperature coefficient property change and the metalized polysilicon area with positive temperature coefficient change on each small polysilicon unit resistor, by adjusting the proportion of the non-metallized polysilicon region to the metallized polysilicon region, the positive variation of the resistance value of the metallized polysilicon region along with the temperature is larger than or equal to the negative variation of the resistance value of the non-metallized polysilicon region along with the temperature, and then, adjacent polycrystalline silicon unit resistors are connected through a metal wire with a positive temperature coefficient change, so that the plurality of polycrystalline silicon unit resistors form an integral polycrystalline silicon resistor structure with a resistance value changing with the positive temperature coefficient. Compared with the prior art, the invention utilizes the end part area of the resistor device which is ignored under the normal condition and connects the adjacent polysilicon unit resistors through the metal wire, so that the proportion of the end part area in the whole resistor structure is increased, and the temperature characteristic of the whole resistor is changed from the negative temperature coefficient to the positive temperature coefficient after the end part area reaches a certain proportion. This provides the designer with a solution for process stability superior to the positive temperature coefficient resistance obtained with the prior art diffusion or well region resistance. Therefore, the limitation of the performance of the semiconductor device can be avoided, and the positive temperature coefficient polysilicon resistor structure with higher resistance can be obtained under the conditions of not increasing the process burden, ensuring the process stability of the device and not sacrificing the area.
Drawings
Fig. 1 is a schematic top view of a conventional rectangular polysilicon resistor structure;
FIG. 2 is a graph of resistance versus temperature for a conventional polysilicon resistor structure;
FIG. 3 is a schematic diagram of a conventional polysilicon resistor structure covered with a metal silicide barrier layer in the middle region;
FIG. 4 is a graph of resistance versus temperature for the middle region of a conventional polysilicon resistor structure;
FIG. 5 is a graph of resistance versus temperature for a conventional polysilicon resistor structure after metallization of a metal silicide in an end region;
FIG. 6 is a schematic structural diagram of a plurality of negative temperature coefficient polysilicon cell resistors spaced apart according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a structure of a polysilicon cell resistor having a metal silicide blocking layer covering the middle region thereof according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a structure for forming a metal silicide layer in the end region of the polysilicon cell resistor according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a PTC polysilicon resistor formed by connecting polysilicon cell resistors of an embodiment of the present invention via metal lines to form an integrated structure;
FIG. 10 is a schematic perspective view of the structure of FIG. 9;
FIG. 11 is a simplified structural schematic of FIG. 9;
FIG. 12 is a schematic diagram of a structure for changing the length ratio of the middle region and the end region of the polysilicon cell resistor in an embodiment of the present invention;
FIG. 13 is a schematic diagram of a structure for simultaneously changing the length ratio and the width ratio of the middle region and the end region of the polysilicon cell resistor in accordance with an embodiment of the present invention;
FIG. 14 is a graph of the position relationship of the diffusion resistance and the polysilicon resistance;
FIG. 15 is a graph showing the relationship between the well resistance and the polysilicon resistance.
Detailed Description
The invention is described in detail below with reference to the attached drawing figures:
FIG. 3 is a schematic diagram of a conventional non-metallized polysilicon resistor having a metal silicide barrier layer overlying the middle region of the resistor. Referring to fig. 3, in the manufacturing process of the polysilicon resistor structure, a metal silicide barrier layer 20 is disposed in the middle region 11 to prevent the metallization of the middle region 11, and the exposed end regions 12 are typically connected by metal lines after being metallized by metal silicide via contact holes 13. FIG. 4 is a graph of resistance versus temperature for the middle region of a polysilicon resistor structure; fig. 5 is a graph of resistance versus temperature for an end region of a polysilicon resistor structure after metallization with a metal silicide. Wherein the abscissa is a temperature value in units of deg.C, and the ordinate is a total resistance value of the polysilicon resistor structure in units of omega. Except that the temperature values in fig. 5 are expressed by scientific calculation, which is illustrated by taking 1.28E +02 as an example, and E is a symbol of scientific counting, which means 1.28 × 102Omega. Referring to fig. 4 and fig. 5, the inventors have found that the temperature characteristics of the middle region 11 and the end region 12 of the polysilicon resistor 10 are in opposite trends, the polysilicon resistor structure 10 forms an unmetallized non-metal silicide region in the middle region 11 due to the metal silicide barrier layer 20, which is kept unchanged in a negative temperature coefficient change, and the end region 12 forms an end region composed of a metal silicide region, a metal silicide region interface with the non-metal silicide region, a contact hole, and a connection metal after being metalized with a metal silicide, because the four parts are all positive temperature coefficients, the end region 12 also has a positive temperature coefficient change as a whole, that is, the resistance value of the end region 12 increases with the increase of temperature. Thus, the inventors propose whether a positive temperature coefficient polysilicon resistor structure can be obtained by utilizing the characteristic that the resistance value of the end region 12 of the polysilicon resistor 10 changes with a positive temperature coefficient. To overcome resistance and well in the diffusion regionThe area resistor has the technical prejudice that a new process structure is adopted to realize the polysilicon resistor structure which has higher resistance and positive temperature coefficient under the condition of not increasing the process burden, ensuring the process stability of the device and not sacrificing the area.
Referring to fig. 6 to 11, an embodiment of the invention provides a positive temperature coefficient polysilicon resistor structure 100, including a plurality of rectangular polysilicon unit resistors 110, each of the polysilicon unit resistors 110 includes a non-metalized polysilicon region 111 with a resistance value varying with a negative temperature coefficient in a middle region and a metalized polysilicon region 112 with a resistance value varying with a positive temperature coefficient in end regions at two ends, wherein a positive variation of the resistance value of the metalized polysilicon region 112 with temperature is greater than or equal to a negative variation of the resistance value of the non-metalized polysilicon region 111 with temperature, and adjacent polysilicon unit resistors 110 are connected to a metal line 140 with a positive temperature coefficient variation of the resistance value through a contact hole 113 formed in the end regions.
Referring to fig. 6 to 11, in the ptc polysilicon resistor structure 100 according to the embodiment of the present invention, two ends of the whole structure of the ptc polysilicon resistor structure 100 are electrically connected to the metal line 140 through the contact hole 113 in the end region and are led out to form a lead. The leads are used for electrical connection in circuits such as semiconductor devices. The metal lines 140 connected to the leads further enhance the positive temperature coefficient polysilicon resistor structure 100 of the integrated structure to have a positive temperature coefficient of resistance variation.
The embodiment of the invention also provides a manufacturing method of the positive temperature coefficient polysilicon resistor structure 100, which comprises the following steps:
in step 201, referring to fig. 6, a plurality of rectangular polysilicon unit resistors 110 are formed by using a polysilicon material, and each of the polysilicon unit resistors 110 is divided into a middle region and end regions located at two ends of the middle region. For example, referring to fig. 6 to 7, each of the polysilicon unit resistors 110 is divided into a middle region and end regions at two ends by a metal silicide blocking layer 120 covering each of the polysilicon unit resistors 110, wherein an interface between the end regions and the middle region is a contact interface. Wherein the metal silicide blocking layer 120 is one or more of silicon nitride, silicon oxide and silicon oxynitride. The polysilicon material can be P-type doped polysilicon or N-type doped polysilicon. Wherein the ions of the P-type impurities can be one or more of phosphorus, arsenic and antimony. The ions of the N-type impurities can be one or more of boron, gallium and indium.
In step 202, referring to fig. 6, a non-metallization polysilicon region 111 with a resistance value varying with a negative temperature coefficient is formed in a middle region of each polysilicon unit resistor 110, a metallization polysilicon region 112 with a resistance value varying with a positive temperature coefficient is formed in an end region of each polysilicon unit resistor 110, and by adjusting a ratio of the non-metallization polysilicon region 111 to the metallization polysilicon region 112, a positive variation of the resistance value of the metallization polysilicon region 112 with temperature is greater than or equal to a negative variation of the resistance value of the non-metallization polysilicon region 111 with temperature. The non-metallized polysilicon region 111 is a polysilicon material, and its resistance value is determined to be changed by negative temperature coefficient, and the resistance value of the metallized polysilicon region 112 is changed by positive temperature coefficient. Referring to fig. 12, the ratio of the non-metal polysilicon region 111 to the metal polysilicon region 112 is adjusted by adjusting the length ratio of the length L of the middle region of the polysilicon unit resistor 110 to the length L1 of the end region, for example, making L as small as possible under the condition of satisfying the process rule. The length ratio of the length L of the middle region to the length L1 of the end region of the polysilicon cell resistor 110 and the width ratio of the whole may be adjusted at the same time, for example, the original width is W, and the adjusted width is W1, which essentially adjusts the length ratio.
In step 203, referring to fig. 9 to 11, the adjacent polysilicon unit resistors 110 are connected to the metal line 140 with the ptc variable resistance through the contact holes 113 formed in the end regions to form the integral structure of the ptc polysilicon resistor structure 100.
Referring to fig. 7, in the method for manufacturing the ptc polysilicon resistor structure 100 according to the embodiment of the present invention, the metal silicide blocking layer 120 covering each of the polysilicon unit resistors 110 is used as a mask, so that the non-metalized polysilicon region 111 with a negative temperature coefficient change in resistance is formed in the covered middle region, and the metalized polysilicon region 112 with a positive temperature coefficient change in resistance is formed in the exposed end region.
Referring to fig. 8, in the method for manufacturing the ptc polysilicon resistor structure 100 according to the embodiment of the present invention, a metal silicide 130 is deposited on the exposed end region to form a metalized polysilicon region 112 with a ptc variable resistance. The metal silicide 130 is one or more of nickel silicide, cobalt silicide, tungsten silicide, tantalum silicide, titanium silicide, platinum silicide, erbium silicide, and palladium silicide.
In the positive temperature coefficient polysilicon resistor structure 100 provided in the embodiment of the present invention, the metal line 140 may be a single metal material or an alloy material. Single metals such as copper, aluminum, gold, etc. Alloy materials such as copper aluminum alloy, etc.
The positive temperature coefficient polysilicon resistor structure 100 provided by the embodiment of the invention cascades a plurality of polysilicon unit resistors 100 through the metal wire 140, so that the positive temperature coefficient polysilicon resistor structure 100 with higher resistance and high resistance can be formed.
Referring to fig. 6 to fig. 7, in the method for manufacturing the ptc polysilicon resistor structure 100 according to the embodiment of the present invention, the metal silicide 130 and the metal silicide blocking layer 120 are equal to or slightly larger than the middle region of the polysilicon unit resistor 110. The metal silicide blocking layer 120 is slightly larger than the middle region of the polysilicon unit resistor 110, which means that the width direction of the metal silicide blocking layer 120 needs to be larger than the width W of the polysilicon unit resistor 110, so as to make the middle region have a better coverage rate, so as to prevent the middle region of the polysilicon unit resistor 110 from being exposed and metallized. Wherein the length L of the middle region may be calculated according to the length of the metal silicide blocking layer 120.
In order to better understand the above technical solution of the present invention, the embodiment of the present invention provides experimental data of the resistance value of the metalized polysilicon region 112, the resistance value of the non-metalized polysilicon region 111, and the variation of the total resistance value with temperature in a group of polysilicon resistor units 110. This is a high resistance polysilicon resistor with a unit resistance of 1000 ohms/square, which exhibits a negative temperature coefficient in conventional resistor structures. Now, the structure of the invention is made into a device again, and the relationship between the resistance and the temperature after separation is calculated through model simulation and is shown in the following table 1. The width (W) was 2 microns and the resistance cell middle region length (L) was 0.3 microns.
TABLE 1
The experimental data of the resistance values of the metalized polysilicon regions, the resistance values of the non-metalized polysilicon regions, and the total resistance values as a function of temperature when the temperature values were varied from-40 deg.c, 25 deg.c and 85 deg.c are shown in table 1 above. As can be seen from the second column in table 1, the resistance value of the metalized polysilicon region 112 increases with the increase of temperature, the resistance value change rate with the increase of temperature is (74.72411-48.16769) ÷ (85+40) — 0.2125 ℃ (four significant digits are rounded), i.e., it shows the positive temperature coefficient change, as can be seen from the third column in table 1, the resistance value change rate with the increase of temperature of the nonmetal polysilicon region 111 decreases, and the resistance value change rate with the increase of temperature is (142.8749-159.7988) ÷ (85+40) — 0.1354 ℃ (four significant digits are rounded), i.e., it shows the negative temperature coefficient change. From this, the positive resistance value change rate of the metalized polysilicon area 112 with temperature change of 0.2125 ℃ is larger than the negative resistance value change rate of the non-metalized polysilicon area 111 with temperature change of-0.1354 ℃. As can be seen from table 1, at each temperature, the total resistance value is equal to the sum of the resistance value of the metalized polysilicon area and the resistance value of the unmetallized polysilicon area, the total resistance value increases with the increase of the temperature, and the total resistance value change rate is (217.5991-207.9665)/(85 +40) ═ 0.0771 ℃. (four significant digits are rounded), namely, the change of the positive temperature coefficient is shown.
The positive temperature coefficient polysilicon resistor structure 100 and the manufacturing method thereof according to the embodiment of the invention divide a traditional whole polysilicon resistor into a plurality of rectangular small polysilicon unit resistors 110, then by disposing the non-metalized polysilicon area 111 exhibiting a negative temperature coefficient property change and the metalized polysilicon area 112 exhibiting a positive temperature coefficient change in each of the small polysilicon unit resistors 110, by adjusting the ratio of the non-metallized polysilicon region 111 to the metallized polysilicon region 112, the positive variation of the resistance value of the metallized polysilicon region 112 with temperature is greater than or equal to the negative variation of the resistance value of the non-metallized polysilicon region 111 with temperature, the adjacent polysilicon cell resistors 110 are then connected by a metal line 140 that exhibits a positive temperature coefficient of variation, therefore, the polysilicon unit resistors 110 are integrated into the polysilicon resistor structure 100 with the resistance value varying with positive temperature coefficient. The invention utilizes the end part area of the resistor which is ignored under normal condition to increase the proportion of the resistor in the whole resistor structure, and the temperature characteristic of the whole resistor is changed from negative temperature coefficient to positive temperature coefficient after reaching a certain proportion. This provides the designer with a solution for process stability superior to the positive temperature coefficient resistance obtained with the prior art diffusion or well region resistance. Therefore, the limitation of the performance of the semiconductor device can be avoided, and the positive temperature coefficient polysilicon resistor structure with higher resistance can be obtained under the conditions of not increasing the process burden, ensuring the process stability of the device and not sacrificing the area.
The present invention is not limited to the above-described embodiments, and various changes and modifications within the scope of the present invention are within the scope of the present invention.
Claims (10)
1. The positive temperature coefficient polysilicon resistor structure is characterized by comprising a plurality of polysilicon unit resistors arranged at intervals in a rectangular shape, wherein each polysilicon unit resistor comprises a non-metalized polysilicon area with a resistance value in a middle area changing in a negative temperature coefficient mode and a metalized polysilicon area with a resistance value in end areas at two ends changing in a positive temperature coefficient mode, the positive variation of the resistance value of the metalized polysilicon area along with the temperature is equal to the negative variation of the resistance value of the non-metalized polysilicon area along with the temperature, and the adjacent polysilicon unit resistors are connected with a metal wire with a resistance value changing in a positive temperature coefficient mode through a contact hole formed in the end areas.
2. The PTC polysilicon resistor structure of claim 1, wherein two ends of the PTC polysilicon resistor structure are electrically connected to the metal lines through contact holes in the end regions and lead out to form leads.
3. A manufacturing method of a positive temperature coefficient polysilicon resistance structure is characterized by comprising the following steps:
forming a plurality of rectangular polysilicon unit resistors at intervals by using a polysilicon material, and dividing each polysilicon unit resistor into a middle area and end areas positioned at two ends of the middle area;
forming a non-metalized polysilicon area with the resistance value changing with a negative temperature coefficient in the middle area of each polysilicon unit resistor, forming a metalized polysilicon area with the resistance value changing with a positive temperature coefficient in the end area of each polysilicon unit resistor, and adjusting the proportion of the non-metalized polysilicon area to the metalized polysilicon area to ensure that the positive variation of the resistance value of the metalized polysilicon area along with the temperature is equal to the negative variation of the resistance value of the non-metalized polysilicon area along with the temperature;
and connecting the adjacent polysilicon unit resistors with the metal wire with the resistance value changing in positive temperature coefficient through the contact holes formed in the end part area to form the positive temperature coefficient polysilicon resistor structure with an integral structure.
4. The method of manufacturing a positive temperature coefficient polysilicon resistor structure of claim 1, wherein the ratio of the non-metalized polysilicon area to the metalized polysilicon area is adjusted by adjusting the length ratio of the middle area to the end area of the polysilicon unit resistor.
5. The method of manufacturing a ptc polysilicon resistor structure according to claim 3, wherein each of the polysilicon unit resistors is divided into a middle region and end regions at both ends by a metal silicide blocking layer covering each of the polysilicon unit resistors, wherein the boundary line between the end regions and the middle region is a contact interface.
6. The method of claim 5, wherein the metal silicide barrier layer is one or more of silicon nitride, silicon oxide and silicon oxynitride.
7. The method of manufacturing a PTC polysilicon resistor structure as claimed in claim 3, wherein the non-metalized polysilicon region with a negative temperature coefficient of resistance change is formed in the covered middle region and the metalized polysilicon region with a positive temperature coefficient of resistance change is formed in the exposed end region by using the metal silicide blocking layer covered on each of the polysilicon unit resistors as a mask.
8. The method of manufacturing a PTC-resistor structure as claimed in claim 7, wherein the metallized polysilicon regions having PTC resistance are formed by depositing a metal silicide in the exposed end regions.
9. The method of claim 8 wherein the metal silicide is one or more of nickel silicide, cobalt silicide, tungsten silicide, tantalum silicide, titanium silicide, platinum silicide, erbium silicide, and palladium silicide.
10. The method of manufacturing a positive temperature coefficient polysilicon resistor structure of claim 3, wherein the polysilicon material is P-type doped or N-type doped polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910056882.6A CN109686725B (en) | 2019-01-22 | 2019-01-22 | Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910056882.6A CN109686725B (en) | 2019-01-22 | 2019-01-22 | Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109686725A CN109686725A (en) | 2019-04-26 |
| CN109686725B true CN109686725B (en) | 2021-10-01 |
Family
ID=66192650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910056882.6A Active CN109686725B (en) | 2019-01-22 | 2019-01-22 | Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109686725B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104134A (en) * | 2016-02-19 | 2017-08-29 | 三重富士通半导体股份有限公司 | The manufacture method of semiconductor device and semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273233A (en) * | 2002-01-10 | 2003-09-26 | Seiko Instruments Inc | Semiconductor device and method of manufacturing the same |
| KR101896412B1 (en) * | 2011-08-01 | 2018-09-07 | 페어차일드코리아반도체 주식회사 | Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing mehtod of poly silicon resistor |
| CN104037058B (en) * | 2013-03-08 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacture method thereof |
| CN105493234B (en) * | 2013-09-27 | 2019-08-27 | 英特尔公司 | The method for forming tuneable temperature coefficient for embedded resistor |
| US9331136B2 (en) * | 2014-05-30 | 2016-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and method of fabricating the same |
-
2019
- 2019-01-22 CN CN201910056882.6A patent/CN109686725B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104134A (en) * | 2016-02-19 | 2017-08-29 | 三重富士通半导体股份有限公司 | The manufacture method of semiconductor device and semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| 《金属线材电阻系数试验方法》国家标准讨论会在津召开;《冶金标准化与质量》;19940318(第03期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109686725A (en) | 2019-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7659176B2 (en) | Tunable temperature coefficient of resistance resistors and method of fabricating same | |
| US7696603B2 (en) | Back end thin film capacitor having both plates of thin film resistor material at single metallization layer | |
| US9461038B2 (en) | Semiconductor device with resistance circuit | |
| US5567977A (en) | Precision integrated resistor | |
| KR101050867B1 (en) | High resistance value split poly shock resistance with low standard deviation | |
| US6621404B1 (en) | Low temperature coefficient resistor | |
| JPH0434966A (en) | Manufacture of semiconductor device | |
| CN104037173B (en) | Polyresistor structure and forming method thereof | |
| US7034653B2 (en) | Semiconductor resistor | |
| CN109686725B (en) | Positive temperature coefficient polysilicon resistance structure and manufacturing method thereof | |
| CN101221950B (en) | Resistor structure and its forming method | |
| US20080090376A1 (en) | Method of fabricating semiconductor device | |
| US11514300B2 (en) | Resistor circuit, artificial intelligence chip and method for manufacturing the same | |
| CN106981455A (en) | Thin film resistor, semiconductor device and method for manufacturing the same | |
| CN209963056U (en) | Semiconductor resistor and CMOS device | |
| CN107026164B (en) | Switch improvement using layout optimization | |
| CN108336067B (en) | Semiconductor device and method for manufacturing semiconductor device | |
| US20060057813A1 (en) | Method of forming a polysilicon resistor | |
| CN109686724A (en) | Positive temperature coefficient polysilicon resistance structure and its manufacturing method | |
| JP3160954B2 (en) | Semiconductor device | |
| WO2010031203A1 (en) | High resistivity semiconductor resistance element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |