CN109679020A - Acrylic ester film-forming resin and ArF photoresist containing cubane and preparation method thereof and photolithography method - Google Patents
Acrylic ester film-forming resin and ArF photoresist containing cubane and preparation method thereof and photolithography method Download PDFInfo
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- CN109679020A CN109679020A CN201811620801.2A CN201811620801A CN109679020A CN 109679020 A CN109679020 A CN 109679020A CN 201811620801 A CN201811620801 A CN 201811620801A CN 109679020 A CN109679020 A CN 109679020A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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Abstract
The invention belongs to semiconductor and integrated circuit fields, a kind of acrylic ester film-forming resin containing cubane and ArF photoresist and preparation method thereof and photolithography method are specifically disclosed.The ArF photoresist contains film-forming resin and photo-acid generator, the film-forming resin as mass fraction be 20-60% unit cell I with structure shown in formula (1) and mass fraction be 40-80% the copolymerization of unit cell II with structure shown in formula (2) obtain, R1And R1It is each independently hydrogen atom or methyl, R2For acid-labile group.Photoresist provided by the invention has preferable etch resistance, in a photolithographic process without hard mask layer, hard mask technique is substituted using new photoetching process, can not only save hard mask layer, but also can be reached and original process quite even preferably etch resistance energy.In addition, photoetching process provided by the invention only needs the rotation sol evenning machine using subsequent photoetching, CVD machine is not needed, and achievees the purpose that reduce material cost and production time.
Description
Technical field
The invention belongs to semiconductor and integrated circuit fields, and in particular to a kind of acrylic ester film forming tree containing cubane
Rouge and ArF photoresist and preparation method thereof and photolithography method.
Background technique
In the photoetching process of semiconductor and IC manufacturing, when critical size (CD) is less than 90nm, it will use
To ArF photoresist.Usually between ArF photoresist and substrate (substrate), need using amorphous carbon compound (a-
Carbon) and silicon oxynitride (SiON) as hard mask (hard mask) layer improves etch resistance energy, then the ArF's that arranges in pairs or groups is anti-
Resolution is improved in reflecting layer.Specific photoetching process is as shown in figure 1 shown in a, firstly, sequentially forming on substrate (substrate)
Amorphous carbon layer (a-carbon), silicon oxynitride layer (SiON), anti-reflecting layer (BARC) and patterned ArF photoresist layer (ArF
PR)；Using the patterned ArF photoresist layer as exposure mask, the anti-reflecting layer is performed etching, patterned anti-reflective is formed
Layer is penetrated, the patterned ArF photoresist layer is removed；Using the patterned anti-reflecting layer as exposure mask, to the nitrogen oxidation
Silicon layer is etched, and forms patterned silicon oxynitride layer, removes the patterned anti-reflecting layer；With the patterned nitrogen
Silicon oxide layer is etched the amorphous carbon layer as exposure mask, forms patterned amorphous carbon layer, removes described patterned
Silicon oxynitride layer；Using the patterned amorphous carbon layer as exposure mask, the substrate is etched, forms patterned lining
Bottom removes the patterned amorphous carbon layer.Therefore, a kind of ArF photoresist with excellent etch resistance energy is developed, in photoetching
It does not need that technique distance will be shortened using hard mask layer in the process, achievees the purpose that reduce material cost and production time.
Summary of the invention
The present invention is intended to provide it is a kind of with excellent etch resistance can acrylic ester film-forming resin containing cubane and
ArF photoresist and preparation method thereof and photolithography method.
Specifically, the present invention provides a kind of acrylic ester film-forming resin containing cubane, wherein described to contain cubane
Acrylic ester film-forming resin be 20-60% by mass fraction unit cell I and mass fraction be 40-80% unit cell
II copolymerization obtains, and the unit cell I has structure shown in formula (1), and the unit cell II has to be tied shown in formula (2)
Structure:
Wherein, R1And R1It is each independently hydrogen atom or methyl, R2For acid-labile group and its structure is selected from following structural
Any one in serial (3):
Wherein, X be methyl or ethyl,Indicate the connecting key with oxygen in main structure.
Preferably, the unit cell II is selected from least one of following substance: the tert-butyl alcohol (methyl) acrylate, ring
Amylalcohol (methyl) acrylate, cyclohexanol (methyl) acrylate, isoborneol (methyl) acrylate, 2- methyl -2- adamantane
Alcohol (methyl) acrylate, 2- ethyl -2- adamantanol (methyl) acrylate, tertbutyloxycarbonyl (methyl) acrylate, four
Hydrogen furans -2- hydroxyl-(methyl) acrylate, 2- carbonyl-tetrahydrofuran -3- hydroxyl-(methyl) acrylate, oxinane -
2- hydroxyl-(methyl) acrylate, 2- carbonyl-oxinane -3- hydroxyl-(methyl) acrylate.
Preferably, the acrylic ester film-forming resin containing cubane is bipolymer, terpolymer or four
Membered copolymer.
Preferably, the weight average molecular weight of the acrylic ester film-forming resin containing cubane is 15000-50000, molecule
Amount is distributed as 1.5-3.0.
The present invention also provides a kind of ArF photoresist, the ArF photoresist contains the above-mentioned acrylic ester containing cubane
Film-forming resin and photo-acid generator.
Preferably, the photo-acid generator be ionic photo-acid generator and/or non-ionic photo-acid generator, it is described from
Subtype photo-acid generator is salt compounded of iodine and/or sulfosalt, and the non-ionic photo-acid generator is selected from organohalogen compound, again
At least one of nitrogen sulfone and imines sulphonic acid ester.
Preferably, additive and/or solvent are also contained in the ArF photoresist.
Preferably, on the basis of the total weight of the ArF photoresist, the acrylic ester film-forming resin containing cubane
Content be 10-35wt%, the content of the photo-acid generator is 0.5-5wt%, and the total content of the additive and solvent is
60-85wt%.
Preferably, the additive in levelling agent, plasticizer, solution rate reinforcing agent and photosensitizer at least one
Kind, the solvent is selected from cyclohexanone, diacetone alcohol, ethyl acetate, glycol monoethyl ether, ethylene glycol monomethyl ether acetate and dipropyl
At least one of glycol monomethyl ether.
The preparation method of ArF photoresist provided by the invention includes the acrylic ester film forming tree by described containing cubane
Rouge, photo-acid generator and optional additive and solvent are uniformly mixed, then successively with the first filtering that aperture is 20-50nm
The second filter that device and aperture are 2-20nm filters, and the aperture of the first filter is greater than the hole of second filter
Diameter.Wherein, there is no particular limitation to the uniformly mixed mode by the present invention, for example, can be past clean plastic containers
Acrylic ester film-forming resin, photo-acid generator and optional additive and solvent described in middle addition containing cubane, later
The plastic containers are fixed on mechnical oscillator, are shaken 10-48 hours at room temperature, so that each component sufficiently dissolves.
As shown in figure 1 shown in b, photolithography method provided by the invention includes:
Apply anti-reflecting layer: with sol evenning machine on wafer substrate (substrate) anti-reflection coating material to form anti-reflective
Penetrate layer (BARC)；
Spin coating: above-mentioned ArF photoresist is coated in anti-reflecting layer surface to form photoresist layer；
Baking: in the hot plate cavity of the sol evenning machine in 120-150 DEG C baking 80-150 seconds；
It is cooling: to be cooled to room temperature in the cold plate cavity of the sol evenning machine；
Exposure: with photo-etching machine exposal with will be on the graph copying on mask plate to the photoresist layer；
Baking: in the hot plate cavity of the sol evenning machine in 90-120 DEG C baking 90-130 seconds；
Development: the photoresist after exposure is developed and is rinsed completely with developing machine.
Preferably, the mode for coating the photoresist is spin coating.
Preferably, the photoresist layer with a thickness of 0.1 μm -1.0 μm.
Preferably, the wavelength of the exposure is 193nm.
Beneficial effects of the present invention are as follows: ArF photoresist provided by the invention has preferable etch resistance, and in light
It does not need to substitute hard mask technique using new photoetching process using hard mask layer (hard mask) during carving, it can not only
Enough achieve the purpose that save hard mask layer, but also can reach and original process quite even preferably etch resistance energy.In addition,
Photoetching process provided by the invention only needs the rotation sol evenning machine using subsequent photoetching, does not need CVD machine, and reaches reduction material
Expect the purpose of cost and production time.
Detailed description of the invention
Fig. 1 is the comparison diagram of traditional photolithography method and photolithography method of the invention, wherein a is traditional photolithography method,
B is photolithography method of the invention.
Specific embodiment
The embodiment of the present invention is described below in detail, the examples of the embodiments are intended to be used to explain the present invention, and cannot
It is interpreted as limitation of the present invention.In the examples where no specific technique or condition is specified, described according to the literature in the art
Technology or conditions or carried out according to product description.Reagents or instruments used without specified manufacturer is that can lead to
Cross the conventional products of commercially available acquisition.
In following embodiment and comparative example, the specific side of synthesis of 4- methylol-cubane -1- methoxy acrylate
Method is as follows, specifically: using cyclopentenone as raw material, replaced with NBS, generate the amyl- 2- ketenes (a) of 4- bromine ring, then with Br2Add
At 2,3,4- tribromo cyclopentanone (b) are generated, amyl- 2, the 4- dienone (c) of 2- bromine ring is generated through elimination reaction, then add through intermolecular ring
It at reaction, obtains dimer (d), e is generated by Intramolecular cycloaddition, Favorskii rearrangement reaction generates f, and reduction is anti-
Cubane-Isosorbide-5-Nitrae-dimethanol (g) should be generated, passes through esterification finally by with methacrylic acid, generates target product 4- hydroxyl
Methyl-cubane -1- methoxy acrylate (h).Wherein, the reaction of (a) to (f) belongs to popular response, existing
It is reported in patent document.
Embodiment 1
The embodiment is related to the preparation of the acrylic ester film-forming resin (binary) containing cubane, and route is as follows:
4- methylol-cubane -1- methoxy acrylate 51.0g, 2- is sequentially added in 500ml three-necked flask
Methyl -2- adamantanol methacrylate 35.0g, radical polymerization initiator AIBN 2.0g and solvent 1,4- dioxane
100g leads to nitrogen 10 minutes under agitation, is then heated to 70 DEG C under nitrogen protection and reacts 18 hours, obtains film forming tree
Rouge.The weight average molecular weight of the film-forming resin is 42000, molecular weight distribution 2.10.
Polymerization reaction formula is as follows:
Embodiment 2
The embodiment is related to the preparation of the acrylic ester film-forming resin (ternary) containing cubane, and route is as follows:
4- methylol-cubane -1- methoxy acrylate 30.6g, 2- is sequentially added in 500ml three-necked flask
Carbonyl-tetrahydrofuran -3- hydroxy-methacrylate 39.9g, 2- methyl -2- adamantanol methacrylate 31.5g, from
By base polymerization initiator AIBN 2.0g and solvent Isosorbide-5-Nitrae-dioxane 180g, leads under agitation nitrogen 10 minutes, then exist
It is heated to 80 DEG C under nitrogen protection to react 16 hours, obtains film-forming resin.The weight average molecular weight of the film-forming resin is 32000, point
Son amount is distributed as 2.69.
Polymerization reaction formula is as follows:
Embodiment 3
The embodiment is related to the preparation of the acrylic ester film-forming resin (quaternary) containing cubane, and route is as follows:
4- methylol-cubane -1- methoxy acrylate 20.2g, 2- is sequentially added in 500ml three-necked flask
Carbonyl-tetrahydrofuran -3- hydroxy-methacrylate 40.5g, 2- methyl -2- adamantanol methacrylate 21.9g, 2-
Ethyl -2- adamantanol methacrylate 16.8g, radical polymerization initiator AIBN 2.0g and solvent 1,4- dioxane
180g leads to nitrogen 10 minutes under agitation, is then heated to 75 DEG C under nitrogen protection and reacts 17 hours, obtains film forming tree
Rouge.The weight average molecular weight of the film-forming resin is 37000, molecular weight distribution 3.05.
Polymerization reaction formula is as follows:
Embodiment 4
The embodiment is for illustrating ArF photoresist provided by the invention and preparation method thereof.
Raw material: film-forming resin 28wt%, photo-acid generator (the 4,4 '-dimethyl diphenyl iodine hexafluoros of the synthesis of embodiment 1
Phosphate) 1.5wt%, additive (dimethyl silicone polymer) 2wt% and solvent (cyclohexanone) 68.5wt%.
Clean (250 milliliters poly- third of plastic containers are added in the above film-forming resin, photo-acid generator, additive and solvent
Alkene plastics bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that each component fills
Divide dissolution, the second filter filtering that the first filter and aperture for being successively then 50nm with aperture are 10nm obtains ArF light
Photoresist J1.
Embodiment 5
The embodiment is for illustrating ArF photoresist provided by the invention and preparation method thereof.
Raw material: film-forming resin 23wt%, photo-acid generator (the 4,4 '-dimethyl diphenyl iodine hexafluoros of the synthesis of embodiment 2
Phosphate) 2.5wt%, additive (dimethyl silicone polymer) 2wt% and solvent (diacetone alcohol) 72.5wt%.
Clean (250 milliliters poly- third of plastic containers are added in the above film-forming resin, photo-acid generator, additive and solvent
Alkene plastics bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that each component fills
Divide dissolution, the second filter filtering that the first filter and aperture for being successively then 40nm with aperture are 5nm obtains ArF light
Photoresist J2.
Embodiment 6
The embodiment is for illustrating ArF photoresist provided by the invention and preparation method thereof.
Raw material: film-forming resin 25wt%, photo-acid generator (the 4,4 '-dimethyl diphenyl iodine hexafluoros of the synthesis of embodiment 3
Phosphate) 3.0wt%, additive (dimethyl silicone polymer) 3wt% and solvent (ethyl acetate) 69wt%.
Clean (250 milliliters poly- third of plastic containers are added in the above film-forming resin, photo-acid generator, additive and solvent
Alkene plastics bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that each component fills
Divide dissolution, the second filter filtering that the first filter and aperture for being successively then 30nm with aperture are 8nm obtains ArF light
Photoresist J3.
Comparative example 1
The comparative example is for illustrating ArF photoresist of reference and preparation method thereof.
Acrylic ester film-forming resin is prepared according to the method for embodiment 1 and prepares ArF photoetching according to the method for embodiment 4
Glue, unlike, in the preparation process of acrylic ester film-forming resin, by I (the 4- methylol-cubane-of unit cell
1- methoxy acrylate) it is substituted using the 2- carbonyl-tetrahydrofuran -3- hydroxy-methacrylate of identical weight part,
Obtain reference ArF photoresist DJ1.
Comparative example 2
The comparative example is for illustrating ArF photoresist of reference and preparation method thereof.
Acrylic ester film-forming resin is prepared according to the method for embodiment 2 and prepares ArF photoetching according to the method for embodiment 5
Glue, unlike, in the preparation process of acrylic ester film-forming resin, by I (the 4- methylol-cubane-of unit cell
1- methoxy acrylate) it is substituted using the isoborneol methacrylate of identical weight part, obtain reference ArF photoresist
DJ2。
Comparative example 3
The comparative example is for illustrating ArF photoresist of reference and preparation method thereof.
Acrylic ester film-forming resin is prepared according to the method for embodiment 3 and prepares ArF photoetching according to the method for embodiment 6
Glue, unlike, in the preparation process of acrylic ester film-forming resin, by I (the 4- methylol-cubane-of unit cell
1- methoxy acrylate) it is substituted using the cyclohexanol methacrylate of identical weight part, obtain reference ArF photoresist
DJ3。
Test case 1
Sol evenning machine is rotated with ACT-8, is distinguished in the different testing pieces for done anti-reflecting layer real by embodiment 4- in spin coating
It applies ArF photoresist J1-J3 that example 6 obtains and the reference ArF photoresist DJ1-DJ3 obtained by comparative example 1-3, spin coating revolving speed is
1000 revs/min.Later, testing piece is toasted 150 seconds through 120 DEG C, is cooled to room temperature.Measure photoresist film layer thickness.
The a piece of above testing piece is taken to be put into LAM EXELAN HPT etching machine bench, process conditions 60Mt/1000W/ respectively
500W/45CF4/180Ar/100O2Etching 20 seconds.It measures remaining photoresist film layer thickness and calculates the etch rate of the film layer.
Concrete outcome is as shown in table 1.
Table 1
It is learnt from the data of table 1, the etch rate of ArF photoresist J1-J3 is smaller than reference ArF photoresist DJ1-DJ3,
Illustrate that the ArF etching-resistance ability of photoetching gum containing the acrylic ester film-forming resin containing cubane can be more preferable.
Test case 2
On the substrate testing piece A for having done anti-reflecting layer, using the ArF photoresist J1 obtained by embodiment 4, and using this
It invents described photolithography method exposure development and patterned photoresist layer (structure chart is as shown in figure 1 shown in b), wherein photoetching is made
Glue-line with a thickness of 370nm, substrate material is silica, anti-reflecting layer with a thickness of 20nm；And in this, as mask etching
Underlying film layer and substrate, and then patterned substrate is made, the line-spacing for measuring underlay pattern is 86nm, depth 124nm, wherein
Etching uses LAM EXELAN HPT etching machine bench, process conditions 60Mt/1000W/500W/45CF4/180Ar/100O2Etching 20
Second.
On the substrate testing piece B for having done hard mask layer and anti-reflecting layer, using commercially available ArF photoresist exposure development system
Patterned photoresist layer (structure chart is as shown in figure 1 shown in a), wherein photoresist with a thickness of 150nm, substrate material is dioxy
SiClx, anti-reflecting layer with a thickness of 20nm, hard mask layer is amorphous carbon layer (with a thickness of 200nm) and silicon oxynitride (with a thickness of
Composite layer 300nm)；And in this, as mask etching underlying film layer until patterned hard mask layer is made, then covered firmly with this
Patterned substrate is made as mask etching substrate in mold layer, and the line-spacing for measuring underlay pattern is 85nm, depth is
110nm, wherein etching uses LAM EXELAN HPT etching machine bench, process conditions 60Mt/1000W/500W/45CF4/180Ar/
100O2Etching 20 seconds.
These results suggest that photoresist provided by the present invention and its photoetching process can achieve required for hard mask technique
Performance, therefore the photoresist can be used and by adjusting photoresist film layer thickness, to substitute hard mask layer.
The preferred embodiment of the present invention has been described above in detail, still, during present invention is not limited to the embodiments described above
Detail within the scope of the technical concept of the present invention can be with various simple variants of the technical solution of the present invention are made, this
A little simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, it can be combined in any appropriate way.In order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (10)
1. a kind of acrylic ester film-forming resin containing cubane, which is characterized in that the acrylate containing cubane is tied to form
The unit cell I and mass fraction that film resin is 20-60% by mass fraction are that the copolymerization of 40-80% unit cell II obtains, institute
Unit cell I is stated with structure shown in formula (1), the unit cell II has structure shown in formula (2):
Wherein, R1And R1It is each independently hydrogen atom or methyl, R2For acid-labile group and its structure is selected from following structural series
(3) any one in:
Wherein, X be methyl or ethyl,Indicate the connecting key with oxygen in main structure.
2. the acrylic ester film-forming resin according to claim 1 containing cubane, which is characterized in that the unit cell
II selected from least one of following substance: the tert-butyl alcohol (methyl) acrylate, cyclopentanol (methyl) acrylate, cyclohexanol
(methyl) acrylate, isoborneol (methyl) acrylate, 2- methyl -2- adamantanol (methyl) acrylate, 2- ethyl -2-
Adamantanol (methyl) acrylate, tertbutyloxycarbonyl (methyl) acrylate, tetrahydrofuran -2- hydroxyl-(methyl) acrylic acid
Ester, 2- carbonyl-tetrahydrofuran -3- hydroxyl-(methyl) acrylate, oxinane -2- hydroxyl-(methyl) acrylate, 2- carbonyl
Base-oxinane -3- hydroxyl-(methyl) acrylate.
3. according to claim 1 or the acrylic ester film-forming resin as claimed in claim 2 containing cubane, which is characterized in that
The acrylic ester film-forming resin containing cubane is bipolymer, terpolymer or quadripolymer；It is described to contain
The weight average molecular weight of the acrylic ester film-forming resin of cubane is 15000-50000, molecular weight distribution 1.5-3.0.
4. a kind of ArF photoresist, which is characterized in that the ArF photoresist contains to be contained described in any one of claim 1-3
The acrylic ester film-forming resin and photo-acid generator of cubane.
5. ArF photoresist according to claim 4, which is characterized in that the photo-acid generator is the photic production acid of ionic
Agent and/or non-ionic photo-acid generator, the ionic photo-acid generator are salt compounded of iodine and/or sulfosalt, the nonionic
Type photo-acid generator is selected from least one of organohalogen compound, diazonium sulfone and imines sulphonic acid ester.
6. ArF photoresist according to claim 4 or 5, which is characterized in that also contain additive in the ArF photoresist
And/or solvent；Preferably, on the basis of the total weight of the ArF photoresist, the acrylic ester containing cubane, which forms a film, to be set
The content of rouge is 10-35wt%, and the content of the photo-acid generator is 0.5-5wt%, the total content of the additive and solvent
For 60-85wt%；Preferably, the additive in levelling agent, plasticizer, solution rate reinforcing agent and photosensitizer at least
One kind, the solvent are selected from cyclohexanone, diacetone alcohol, ethyl acetate, glycol monoethyl ether, ethylene glycol monomethyl ether acetate and two
At least one of propylene glycol monomethyl ether.
7. the preparation method of ArF photoresist described in any one of claim 4-6, which is characterized in that this method includes will
The acrylic ester film-forming resin containing cubane, photo-acid generator and optional additive and solvent are uniformly mixed, and are connect
Be successively 20-50nm with aperture first filter and aperture be 2-20nm the second filter filtering, it is described first filtering
The aperture of device is greater than the aperture of second filter.
8. a kind of photolithography method, which is characterized in that this method comprises:
Apply anti-reflecting layer: with sol evenning machine in wafer substrate anti-reflection coating material to form anti-reflecting layer；
Spin coating: ArF photoresist described in any one of claim 4-6 is coated in above-mentioned anti-reflecting layer surface to form light
Photoresist layer；
Baking: in the hot plate cavity of the sol evenning machine in 120-150 DEG C baking 80-150 seconds；
It is cooling: to be cooled to room temperature in the cold plate cavity of the sol evenning machine；
Exposure: with photo-etching machine exposal with will be on the graph copying on mask plate to the photoresist layer；
Baking: in the hot plate cavity of the sol evenning machine in 90-120 DEG C baking 90-130 seconds；
Development: the photoresist after exposure is developed and is rinsed completely with developing machine.
9. photolithography method according to claim 8, which is characterized in that the mode for coating the photoresist is spin coating.
10. photolithography method according to claim 8, which is characterized in that the photoresist layer with a thickness of 0.1 μm of -1.0 μ
m；The wavelength of the exposure is 193nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113717314A (en) * | 2021-08-26 | 2021-11-30 | 江苏集萃光敏电子材料研究所有限公司 | Photosensitive film-forming resin, photoresist composition and preparation method thereof |
| CN113736007A (en) * | 2021-08-26 | 2021-12-03 | 江苏集萃光敏电子材料研究所有限公司 | Photosensitive film-forming resin containing cubic alkyl, photoresist composition and preparation method thereof |
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| CN105237669A (en) * | 2015-09-11 | 2016-01-13 | 苏州瑞红电子化学品有限公司 | Preparation of 248 nm deep ultraviolet photoresist film forming resin based on RAFT polymerization method |
| CN108628101A (en) * | 2018-04-26 | 2018-10-09 | 儒芯微电子材料（上海）有限公司 | Electron beam lithography glue composition and preparation method |
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| CN113717314A (en) * | 2021-08-26 | 2021-11-30 | 江苏集萃光敏电子材料研究所有限公司 | Photosensitive film-forming resin, photoresist composition and preparation method thereof |
| CN113736007A (en) * | 2021-08-26 | 2021-12-03 | 江苏集萃光敏电子材料研究所有限公司 | Photosensitive film-forming resin containing cubic alkyl, photoresist composition and preparation method thereof |
| CN113736007B (en) * | 2021-08-26 | 2022-09-16 | 江苏集萃光敏电子材料研究所有限公司 | Photosensitive film-forming resin containing cubic alkyl, photoresist composition and preparation method thereof |
| CN113717314B (en) * | 2021-08-26 | 2023-09-22 | 江苏集萃光敏电子材料研究所有限公司 | Photosensitive film-forming resin, photoresist composition and preparation method thereof |
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