CN109426100B - A kind of photoresist of etch resistant and its preparation method and application and photolithography method - Google Patents
A kind of photoresist of etch resistant and its preparation method and application and photolithography method Download PDFInfo
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- CN109426100B CN109426100B CN201811265909.4A CN201811265909A CN109426100B CN 109426100 B CN109426100 B CN 109426100B CN 201811265909 A CN201811265909 A CN 201811265909A CN 109426100 B CN109426100 B CN 109426100B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Abstract
The present invention relates to semiconductor and integrated circuit fields, a kind of photoresist and its preparation method and application and photolithography method are disclosed.The photoresist contains resin and photo-acid generator, the resin contains the unit cell III of the unit cell I of 5-20wt%, the unit cell of 10-30wt% II and 50-70wt%, the unit cell I is the macromonomer for containing the acrylate repeating segment of fullerene with side chain shown in formula (1), the unit cell II is the macromonomer for containing the acrylate repeating segment of hematoporphyrin monomethyl ether with side chain shown in formula (2), the unit cell III is the monomer that can be copolymerized with the unit cell I and unit cell II, R1、R2And R3For hydrogen atom or C1‑C5Alkyl, m 10-30, n 10-50.Photoresist provided by the invention can reach etch rate same as amorphous carbon, and same trench filling capacity may be implemented to substitute CVD machine, save the cost using the rotation sol evenning machine of photoetching process in the forming process of photoresist layer.
Description
Technical field
The invention belongs to semiconductor and integrated circuit fields, and in particular to a kind of photoresist of etch resistant and preparation method thereof
With application and photolithography method.
Background technique
In semiconductor integrated circuit, when lithographic line width is less than the key level of 90nm, it is necessary to use ArF photoetching
Glue.But the etch resistance of ArF photoresist can be bad, and about 200nm is per minute, needs the amorphism using about 500nm
Conjunction object (a-carbon), silicon oxynitride (SiON) protect ArF photoresist as hard mask (hard mask) layer, then the ArF that arranges in pairs or groups
Anti-reflecting layer improve resolution.Specific photoetching process is as shown in Figure 1a, firstly, sequentially forming amorphous carbon layer on substrate
(a-carbon), silicon oxynitride layer (SiON), anti-reflecting layer (BARC) and patterned ArF photoresist layer (ArF PR)；With institute
Patterned ArF photoresist layer is stated as exposure mask, the anti-reflecting layer is performed etching, patterned anti-reflecting layer is formed, goes
Except the patterned ArF photoresist layer；Using the patterned anti-reflecting layer as exposure mask, the silicon oxynitride layer is carried out
Etching forms patterned silicon oxynitride layer, removes the patterned anti-reflecting layer；With the patterned silicon oxynitride layer
As exposure mask, the amorphous carbon layer is etched, forms patterned photoresist layer, removes the patterned silicon oxynitride
Layer；Using the patterned amorphous carbon layer as exposure mask, the substrate is etched, forms patterned substrate, removes institute
State patterned amorphous carbon layer.However, this process flow is required to adopt during forming amorphous carbon layer and silicon oxynitride layer
With CVD technique, need using somewhat expensive board and raw material, the at high cost and process time is long.
Summary of the invention
The present invention is intended to provide a kind of new photoresist and its preparation method and application and photolithography method.
The present invention provides a kind of photoresists, wherein the photoresist contains resin and photo-acid generator, and the resin contains
There are the unit cell III of the unit cell I of 5-20wt%, the unit cell of 10-30wt% II and 50-70wt%, the unit
Monomer I is the macromonomer for containing the acrylate repeating segment of fullerene with side chain shown in formula (1), the unit list
Body II is the macromonomer for containing the acrylate repeating segment of hematoporphyrin monomethyl ether with side chain shown in formula (2), described
Unit cell III is the monomer that can be copolymerized with the unit cell I and unit cell II；
Wherein, R1、R2And R3For hydrogen atom or C1-C5Alkyl, m 10-30, n 10-50.
Unit cell I containing 5-20wt%, the unit cell of 10-30wt% II and 50- simultaneously provided by the invention
The resin of the unit cell III of 70wt% with good light permeability, highly resistance corrosion and has excellent adhesion with substrate.
Preferably, the fullerene is C60Or C70。
Preferably, the unit cell III is the acrylic ester compound with structure shown in formula (3), R1For H or C1-
C5Alkyl, R2For selected from formula (3-1), into formula (3-5), any one can leaving group.Correspondingly, the unit cell III is excellent
Choosing drops ice selected from tert-butyl methacrylate, methacrylic acid hexamethylene alkyl ester, adamantylmethacrylate, methacrylic acid
Piece base ester, [4,4] nine alkane -2- methyl ester of methacrylic acid 1,4- dioxy spiral shell, in methacrylic acid gamma-butyrolacton base ester at least
It is a kind of.
Preferably, on the basis of the total weight of the photoresist, the content of the resin is 5-40wt%, the photic production
The content of sour agent is 60-95wt%.
Preferably, the photo-acid generator (PAG) is ionic photo-acid generator and/or non-ionic photo-acid generator.
Wherein, the ionic photo-acid generator is preferably salt compounded of iodine and/or sulfosalt, the non-ionic photo-acid generator it is specific
Example includes but is not limited to: at least one of organohalogen compound, diazonium sulfone and imines sulphonic acid ester.Most preferably, described
Photo-acid generator is free of aromatic rings, to improve translucidus.
Preferably, additive and/or solvent are also contained in the photoresist.
Preferably, on the basis of the total weight of the photoresist, the content of the resin is 5-20wt%, the photic production
The content of sour agent is 60-85wt%, and the total content of the additive and solvent is 5-20wt%.
Preferably, the additive in levelling agent, plasticizer, solution rate reinforcing agent and photosensitizer at least one
Kind, the solvent is selected from cyclohexanone, diacetone alcohol, ethyl acetate, glycol monoethyl ether, ethylene glycol monomethyl ether acetate and dipropyl
At least one of glycol monomethyl ether.
The preparation method of photoresist provided by the invention includes by the resin, photo-acid generator and optional additive
It is uniformly mixed with solvent, the second filter that the first filter and aperture for being successively then 20-50nm with aperture are 2-20nm
Filtering, the aperture of the first filter are greater than the aperture of second filter.Wherein, the present invention is to described uniformly mixed
There is no particular limitation for mode, for example, can be that the resin, photo-acid generator are added into clean plastic containers and appoints
The plastic containers, are fixed on mechnical oscillator by the additive and solvent of choosing later, shake 10-48 hours at room temperature, with
So that each component sufficiently dissolves.
The present invention also provides application of the photoresist in photoetching.
As shown in Figure 1 b, photolithography method provided by the invention includes:
(1) photoresist layer, silicon oxynitride layer (SiON), anti-reflecting layer are sequentially formed on substrate (substrate)
(BARC) it is formed with patterned photosensitive type photoresist layer (PR), the photoresist layer by above-mentioned photoresist；
(2) using the patterned photosensitive type photoresist layer as exposure mask, the anti-reflecting layer is performed etching, forms figure
The anti-reflecting layer of case removes the patterned photosensitive type photoresist layer；
(3) using the patterned anti-reflecting layer as exposure mask, the silicon oxynitride layer is etched, forms patterning
Silicon oxynitride layer, remove the patterned anti-reflecting layer；
(4) using the patterned silicon oxynitride layer as exposure mask, the photoresist layer is etched, forms patterning
Photoresist layer, remove the patterned silicon oxynitride layer；
(5) using the patterned photoresist layer as exposure mask, the substrate is etched, forms patterned lining
Bottom removes the patterned photoresist layer.
The present invention is to the formation photoresist layer, silicon oxynitride layer, anti-reflecting layer and patterned photosensitive type photoresist layer
Mode there is no particular limitation, it is, for example, possible to use photoetching sol evenning machines to form photoresist by way of spin coating on substrate
Layer, can be used CVD machine depositing silicon oxynitride silicon layer, photoetching sol evenning machine can be used on silicon oxynitride layer by the side of spin coating
Formula formed anti-reflecting layer, can be used photoetching sol evenning machine formed by way of spin coating on silicon oxynitride layer it is patterned photosensitive
Type photoresist layer.
Preferably, the photosensitive type photoresist layer is ArF photoresist layer or EUV lithography glue-line.
Preferably, the mode for forming the photoresist layer is spin coating.
For photolithography method, main improvement of the invention is to use the amorphous carbon layer in traditional handicraft to be mentioned by the present invention
The photoresist layer substitution that the photoresist of confession is formed, and other materials and process conditions are the same as those in the prior art, to this ability
Field technique personnel can know that therefore not to repeat here.
Beneficial effects of the present invention are as follows: photoresist provided by the invention can reach etch rate same as amorphous carbon
(etch resistance can quite), same trench filling capacity, during photoetching, the photoresist layer that will be formed by the photoresist
Traditional amorphous carbon layer is substituted, in the forming process of photoresist layer, the rotation sol evenning machine (light using photoetching process may be implemented
Carve glue spreader) CVD machine is substituted, to achieve the purpose that reduce material cost and shorten production time.
Detailed description of the invention
Fig. 1 is the comparison diagram of traditional photolithography method and photolithography method of the invention, wherein Fig. 1 a is traditional photoetching side
Method, Fig. 1 b are photolithography method of the invention；
Fig. 2 is photoresist J1 and the etch amount of amorphous carbon film layer and the linear comparison diagram of etch period；
Fig. 3 is the TEM figure of testing piece corresponding to photoresist J1 (a) and amorphous carbon (b).
Specific embodiment
The embodiment of the present invention is described below in detail, the examples of the embodiments are intended to be used to explain the present invention, and cannot
It is interpreted as limitation of the present invention.In the examples where no specific technique or condition is specified, described according to the literature in the art
Technology or conditions or carried out according to product description.Reagents or instruments used without specified manufacturer is that can lead to
Cross the conventional products of commercially available acquisition.
Embodiment 1
The embodiment is for illustrating photoresist provided by the invention and preparation method thereof.
Raw material: resin is (by the unit cell III of the unit cell I of 5wt%, the unit cell of 30wt% II and 65wt%
Composition, wherein the unit cell I is the big of the acrylate repeating segment for containing fullerene with side chain shown in formula (1)
Molecule monomer, the unit cell II are that the acrylate for containing hematoporphyrin monomethyl ether with side chain shown in formula (2) repeats chain
The macromonomer of section, the unit cell III are tert-butyl methacrylate, fullerene C60, R1、R2And R3It is hydrogen original
Son, m is 20 and n is 30) 20wt%, photo-acid generator (4,4 '-dimethyl diphenyl iodine hexafluorophosphate) 60wt%, addition
Agent (dimethyl silicone polymer) 2wt% and solvent (cyclohexanone) 18wt%.
The above resin, photo-acid generator, additive and solvent are added to clean plastic containers (250 milliliters of polypropylene plastics
Expect bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that each component is sufficiently molten
Solution, the second filter filtering that the first filter and aperture for being successively then 50nm with aperture are 10nm, obtains photoresist J1.
Embodiment 2
The embodiment is for illustrating photoresist provided by the invention and preparation method thereof.
Raw material: resin is (by the unit cell of the unit cell I of 20wt%, the unit cell of 10wt% II and 70wt%
III composition, wherein the unit cell I is the acrylate repeating segment for containing fullerene with side chain shown in formula (1)
Macromonomer, the unit cell II are that the acrylate for containing hematoporphyrin monomethyl ether with side chain shown in formula (2) repeats
The macromonomer of chain link, the unit cell III are adamantylmethacrylate, fullerene C60, R1、R2And R3It is
Methyl, m be 10 and n be 50) 5wt%, photo-acid generator (4,4 '-dimethyl diphenyl iodine hexafluorophosphate) 85wt%, add
Add agent (dimethyl silicone polymer) 2wt% and solvent (diacetone alcohol) 8wt%.
The above resin, photo-acid generator, additive and solvent are added to clean plastic containers (250 milliliters of polypropylene plastics
Expect bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that each component is sufficiently molten
Solution, the second filter filtering that the first filter and aperture for being successively then 40nm with aperture are 5nm, obtains photoresist J2.
Embodiment 3
The embodiment is for illustrating photoresist provided by the invention and preparation method thereof.
Raw material: resin is (by the unit cell of the unit cell I of 12wt%, the unit cell of 20wt% II and 68wt%
III composition, wherein the unit cell I is the acrylate repeating segment for containing fullerene with side chain shown in formula (1)
Macromonomer, the unit cell II are that the acrylate for containing hematoporphyrin monomethyl ether with side chain shown in formula (2) repeats
The macromonomer of chain link, the unit cell III are methacrylic acid gamma-butyrolacton base ester, fullerene C70, R1、R2And R3
It is hydrogen atom, m is 30 and n is 10) 15wt%, photo-acid generator (4,4 '-dimethyl diphenyl iodine hexafluorophosphate)
70wt%, additive (dimethyl silicone polymer) 3wt% and solvent (ethyl acetate) 12wt%.
The above resin, photo-acid generator, additive and solvent are added to clean plastic containers (250 milliliters of polypropylene plastics
Expect bottle) in, and the plastic containers are fixed on mechnical oscillator, it shakes 20 hours at room temperature, so that each component is sufficiently molten
Solution, the second filter filtering that the first filter and aperture for being successively then 30nm with aperture are 8nm, obtains photoresist J3.
Comparative example 1
The comparative example is for illustrating photoresist of reference and preparation method thereof.
Photoresist is prepared according to the method for embodiment 1, unlike, by the unit cell I using identical weight part
Unit cell II substitutes, and obtains reference photoresist DJ1.
Comparative example 2
The comparative example is for illustrating photoresist of reference and preparation method thereof.
Photoresist is prepared according to the method for embodiment 1, unlike, by the unit cell II using identical weight part
Unit cell I substitutes, and obtains reference photoresist DJ2.
Test case
Grouping one: it is obtained in spin coating by embodiment 1- embodiment 3 in different testing pieces respectively with ACT-8 rotation sol evenning machine
Photoresist J1-J3 and the reference photoresist DJ1-DJ3, the 1000 turns/min of revolving speed that are obtained by comparative example 1- comparative example 2, drip glue
Amount is 1.5 milliliters, and the thickness and record of gained photoresist layer are measured with film thickness measuring instrument.
Grouping two: 120nm amorphous carbon film layer is grown in testing piece with AMAT P5000 board, is measured with film thickness measuring instrument
The thickness and record of amorphous carbon.
The a piece of above testing piece is taken to be put into LAM EXELAN HPT etching machine bench, process conditions 100Mt/600W/ respectively
600W/42CF4/400Ar/15O2Etching 20 seconds measures the thickness of remaining film layer later.
The a piece of above testing piece is taken to be put into LAM EXELAN HPT etching machine bench, process conditions 100Mt/600W/ respectively
600W/42CF4/400Ar/15O2Etching 30 seconds measures the thickness of remaining film layer later.
Experimental result one: obtaining etch amount with the thickness that the thickness of former film layer subtracts remaining film layer, then divided by etching when
Between, the etch rate of film layer is obtained, concrete outcome is as shown in table 1, wherein when the etch amount and etching of photoresist J1 and amorphous carbon
Between linear relationship comparison diagram it is as shown in Figure 2.It is learnt from the data of table 1 and Fig. 2, photoresist J1-J3 provided by the invention can
Accomplish the etch rate same with amorphous carbon, and the etch-rate of photoresist J1-J3 is higher than reference photoresist DJ2.
Experimental result two: the corresponding film layer difference in height of above testing piece is as shown in table 1, wherein photoresist J1 (a) and amorphous
The TEM of testing piece corresponding to carbon (b) schemes as shown in figure 3, the film layer difference in height is the corresponding photoresist film layer in groove position
Thickness photoresist film layer corresponding with no groove position thickness difference in height, film layer difference in height is smaller, shows filling effect
Better.It can be seen that from the data of table 1 using photoresist provided by the invention, corresponding film layer difference in height is smaller.From Fig. 3
Result can be seen that using there is no hole problem in the trench fill of photoresist J1 and amorphous carbon, and upper surface is
Smooth, but film layer difference in height (Ha1-Ha2) corresponding to photoresist J1 is about 20nm, and film layer height corresponding to amorphous carbon
Poor (Hb1-Hb2) is about 40nm.As can be seen from the above results, the filling effect of photoresist J1-J3 provided by the invention is than ginseng
It is more preferable than photoresist DJ1-DJ2 and amorphous carbon.
Table 1
The preferred embodiment of the present invention has been described above in detail, still, during present invention is not limited to the embodiments described above
Detail within the scope of the technical concept of the present invention can be with various simple variants of the technical solution of the present invention are made, this
A little simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, it can be combined in any appropriate way.In order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (13)
1. a kind of photoresist, which is characterized in that the photoresist contains resin and photo-acid generator, and the resin contains 5-
The unit cell III of the unit cell I of 20wt%, the unit cell of 10-30wt% II and 50-70wt%, the unit cell
I is the macromonomer for containing the acrylate repeating segment of fullerene with side chain shown in formula (1), the unit cell II
For contain with side chain shown in formula (2) hematoporphyrin monomethyl ether acrylate repeating segment macromonomer, the unit
Monomer III is the monomer that can be copolymerized with the unit cell I and unit cell II；
Wherein, R1、R2And R3For hydrogen atom or C1-C5Alkyl, m 10-30, n 10-50.
2. photoresist according to claim 1, which is characterized in that the fullerene is C60Or C70。
3. photoresist according to claim 1, which is characterized in that the unit cell III is with structure shown in formula (3)
Acrylic ester compound, R1For H or C1-C5Alkyl, R2For selected from formula (3-1) into formula (3-5) any one can leave away
Group；
4. photoresist according to claim 1, which is characterized in that on the basis of the total weight of the photoresist, the tree
The content of rouge is 5-40wt%, and the content of the photo-acid generator is 60-95wt%.
5. photoresist according to claim 1, which is characterized in that the photo-acid generator is ionic photo-acid generator
And/or non-ionic photo-acid generator, the ionic photo-acid generator be salt compounded of iodine and/or sulfosalt, it is described non-ionic
Photo-acid generator is selected from least one of organohalogen compound, diazonium sulfone and imines sulphonic acid ester.
6. photoresist described in any one of -5 according to claim 1, which is characterized in that also containing addition in the photoresist
Agent and/or solvent.
7. photoresist according to claim 6, which is characterized in that on the basis of the total weight of the photoresist, the tree
The content of rouge is 5-20wt%, and the content of the photo-acid generator is 60-85wt%, and the total content of the additive and solvent is
5-20wt%.
8. photoresist according to claim 6, which is characterized in that the additive is selected from levelling agent, plasticizer, dissolution speed
At least one of reinforcing agent and photosensitizer are spent, the solvent is selected from cyclohexanone, diacetone alcohol, ethyl acetate, ethylene glycol list first
At least one of ether, ethylene glycol monomethyl ether acetate and dipropylene glycol monomethyl ether.
9. the preparation method of photoresist described in any one of claim 1-8, which is characterized in that this method includes will be described
Resin, photo-acid generator and optional additive and solvent are uniformly mixed, then successively with the first mistake that aperture is 20-50nm
The second filter that filter and aperture are 2-20nm filters, and the aperture of the first filter is greater than the hole of second filter
Diameter.
10. application of the photoresist in photoetching described in any one of claim 1-8.
11. a kind of photolithography method, which is characterized in that this method comprises:
(1) photoresist layer, silicon oxynitride layer, anti-reflecting layer and patterned photosensitive type photoresist layer are sequentially formed on substrate,
Photoresist layer photoresist as described in any one of claim 1-8 is formed；
(2) using the patterned photosensitive type photoresist layer as exposure mask, the anti-reflecting layer is performed etching, forms patterning
Anti-reflecting layer, remove the patterned photosensitive type photoresist layer；
(3) using the patterned anti-reflecting layer as exposure mask, the silicon oxynitride layer is etched, forms patterned nitrogen
Silicon oxide layer removes the patterned anti-reflecting layer；
(4) using the patterned silicon oxynitride layer as exposure mask, the photoresist layer is etched, forms patterned light
Photoresist layer removes the patterned silicon oxynitride layer；
(5) using the patterned photoresist layer as exposure mask, the substrate is etched, patterned substrate is formed, goes
Except the patterned photoresist layer.
12. photolithography method according to claim 11, which is characterized in that the photosensitive type photoresist layer is ArF photoresist
Layer or EUV lithography glue-line.
13. photolithography method according to claim 11, which is characterized in that the mode for forming the photoresist layer is spin coating.
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| CN113004291B (en) * | 2019-12-20 | 2022-03-01 | 中国科学院化学研究所 | Metalloporphyrin-based molecular glass chemical amplification photoresist and preparation method and application thereof |
| CN111056945A (en) * | 2019-12-25 | 2020-04-24 | 上海博栋化学科技有限公司 | Photoresist resin monomer synthesized from spiro [5.5] undecane-3, 9-dione and synthesis method thereof |
| CN111983892B (en) * | 2020-09-02 | 2023-07-07 | 之江实验室 | Photo-induced antioxidant polymerization-inhibition femtosecond laser photoresist and preparation method thereof |
| CN114395068B (en) * | 2021-12-28 | 2023-11-03 | 宁波南大光电材料有限公司 | BARC resin for 193nm deep ultraviolet photoresist with narrow distribution and preparation method thereof |
| CN114517043B (en) * | 2022-01-27 | 2022-12-16 | 福建泓光半导体材料有限公司 | Bottom anti-reflective coating composition containing organic rigid cage compound, preparation method thereof and formation method of microelectronic structure |
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| JP4716027B2 (en) * | 2006-08-11 | 2011-07-06 | 信越化学工業株式会社 | Resist protective film material and pattern forming method |
| JP5068828B2 (en) * | 2010-01-19 | 2012-11-07 | 信越化学工業株式会社 | Resist underlayer film forming composition, resist underlayer film forming method, and pattern forming method |
| WO2013054702A1 (en) * | 2011-10-12 | 2013-04-18 | Jsr株式会社 | Composition for forming resist underlayer film, method for manufacturing same, pattern forming method, and resist underlayer film |
| JP5935651B2 (en) * | 2012-10-18 | 2016-06-15 | 三菱商事株式会社 | Resist composition for extreme ultraviolet light and electron beam exposure, and resist pattern forming method using the same |
| WO2014190070A1 (en) * | 2013-05-22 | 2014-11-27 | Robinson Alex Philip Graaham | Fullerenes |
| CN107407883A (en) * | 2015-03-11 | 2017-11-28 | 日产化学工业株式会社 | The forming method of resist lower membrane |
| KR101848343B1 (en) * | 2015-04-30 | 2018-04-12 | 삼성에스디아이 주식회사 | Polymer, organic layer composition, organic layer, and method of forming patterns |
| WO2017141612A1 (en) * | 2016-02-15 | 2017-08-24 | Jsr株式会社 | Composition for forming resist underlayer film, resist underlayer film and method for producing patterned substrate |
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