CN109672080B - Low-threshold optically pumped random laser based on patterned substrate - Google Patents
Low-threshold optically pumped random laser based on patterned substrate Download PDFInfo
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- CN109672080B CN109672080B CN201910046828.3A CN201910046828A CN109672080B CN 109672080 B CN109672080 B CN 109672080B CN 201910046828 A CN201910046828 A CN 201910046828A CN 109672080 B CN109672080 B CN 109672080B
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- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000005086 pumping Methods 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 230000000737 periodic effect Effects 0.000 claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 claims description 2
- 229920000307 polymer substrate Polymers 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims 1
- 238000000149 argon plasma sintering Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012634 optical imaging Methods 0.000 abstract description 3
- 230000001427 coherent effect Effects 0.000 description 31
- 238000001228 spectrum Methods 0.000 description 8
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- 239000000499 gel Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Abstract
The invention discloses a low-threshold light-pumped random laser based on a patterned substrate. The graphical substrate adopted by the invention can effectively enhance the scattering effect of light at the graphical interface, so that the propagation path of the light in the laser gain material is changed, part of the light-scattering light can reenter a closed optical loop in the gain material after being reflected by the graphical substrate, the optical feedback (or gain) of the closed optical loop is improved, and the low-threshold optical pumping random laser output is finally realized. The random laser provided by the invention has a simple structure, is easy to prepare, can realize the regulation and control of laser wavelength by changing a laser gain material, and has important application value in the fields of optical imaging, projection, display, medical detection, military and the like.
Description
Technical Field
The invention belongs to the technical field of random lasers, relates to a random laser, and particularly relates to a low-threshold optically pumped random laser based on a patterned substrate.
Background
Compared with the conventional laser, the random laser (random laser) does not need to manufacture two specific reflectors to form a resonant cavity structure, but utilizes the scattering effect of light in the laser gain material to spontaneously form a closed optical loop, and the light continuously propagates in the closed loops to generate larger optical feedback or gain, so as to finally realize random lasing. The random laser has simple manufacturing process and low cost, and can realize the regulation and control of laser wavelength by changing a laser gain material, so that the random laser has important application value in the fields of optical imaging, projection, display, medical detection, military and the like.
The optical feedback is divided into two types, coherent feedback (coherent feedback) and incoherent feedback (incoherent feedback), depending on The type of optical feedback, Random lasers can be divided into coherent Random lasers and incoherent Random lasers (d.s. wires, The physics, 4: 359; h.cao, et al, The Photon Statistics of Random L with a coherent laser, physics, rev. L et al, 2001,86: 24), in general, coherent and incoherent Random lasers can discriminate by laser spectrum that a Random coherent laser with many sharp emission peaks is a laser spectrum with smooth lines, incoherent or incoherent Random laser depends on The relation between The mean free path of light in The laser gain material and The scattering length of light in The laser spectrum, if The average free path of light is larger than that of coherent laser emission, The average free path of light is larger than that of coherent laser, The average free path of light, The coherent laser emission is larger than that of coherent laser, The coherent laser emission, The average free path of light is larger than that of coherent laser, The coherent laser emission, The coherent Random laser, 10, The coherent and incoherent Random laser emission, if The average free path of light emission is larger than that of light emission, The coherent laser, The emission path of light, The coherent laser, The emission of light, The coherent Random laser, The emission of light emission, The emission of laser, The emission of The coherent Random laser, The emission of The coherent laser, The emission of The coherent Random laser, The emission of The coherent laser, The coherent, The emission of The coherent, The emission of The coherent, The emission of The coherent, The emission of The coherent, The emission of.
At present, random lasers based on powder, gel or thin-film laser gain materials mainly use flat-surface substrates, and the random lasing threshold of the random lasers is relatively high.
Disclosure of Invention
The invention aims to provide a low-threshold optical pumping random laser based on a patterned substrate, which has the advantages of simple manufacturing process, low cost, capability of realizing laser wavelength regulation and control by changing a laser gain material and the like. Meanwhile, the invention also provides the specific application of the random laser.
The specific technical scheme for realizing the purpose of the invention is as follows:
a low-threshold optically pumped random laser based on a patterned substrate is disclosed, wherein the random laser structure comprises the patterned substrate and a laser gain material with high scattering capability arranged on the surface of the substrate; wherein the patterned substrate has a periodic or non-periodic pattern structure; the laser gain material is a high-gain semiconductor material such as zinc oxide, gallium nitride or halogen perovskite, the material is in the form of powder, gel or film, the particle size of the material is 100-10 microns, and the thickness of the material is 2-500 microns.
The patterned substrate is a silicon substrate, a sapphire substrate, a polymer substrate, a silicon carbide substrate, a gallium nitride substrate or a quartz substrate.
The periodic or aperiodic pattern structure is prepared by adopting photoetching, wet etching, dry etching, nano-imprinting or self-assembly methods, wherein the dry etching comprises reactive ion etching, inductively coupled plasma etching and high-density plasma etching.
The periodic or aperiodic pattern structure comprises a photonic crystal structure, a grating structure, a micro-lens array and a self-assembly pattern structure.
The pattern size of the periodic or aperiodic pattern structure is in a micron or nanometer order, and the pattern shape comprises a cone shape, a pyramid shape, a hemisphere shape, a Mongolian yurt shape, a cylinder shape, a groove shape, a pit shape, a volcano mouth shape, a stripe shape and a round hole shape.
The low-threshold optical pumping random laser adopts a continuous or pulse laser light source as a pumping light source; the laser wavelength of the pumping light source is 300-2000 nm; the optical pumping mechanism generates random laser by down-conversion, i.e. single photon absorption or up-conversion, i.e. multiphoton absorption, and the wavelength of the random laser is controlled by selecting different laser gain materials.
The graphical substrate adopted by the invention can effectively enhance the scattering effect of light at the graphical interface, so that the propagation path of the light in the laser gain material is changed, part of the light-scattering light can reenter a closed optical loop in the gain material after being reflected by the graphical substrate, the optical feedback (or gain) of the closed optical loop is improved, and the low-threshold optical pumping random laser output is finally realized.
The random laser provided by the invention has the advantages of simple manufacturing process, low cost, realization of regulation and control of laser wavelength by changing laser gain materials and the like, has a very wide application prospect, and is particularly applied to the fields of optical imaging, projection, display, medical detection, military industry and the like.
Drawings
FIG. 1 is a schematic diagram of the structure of the patterned substrate-based low-threshold optically pumped random laser;
FIG. 2 is a schematic diagram of CH synthesis on a patterned sapphire substrate3NH3PbBr3Scanning electron microscopy images of the perovskite thin film;
FIG. 3 is a schematic diagram of an apparatus for obtaining random laser light under the optical pumping condition of the perovskite random laser; wherein "→" represents a laser propagation direction of the pump light source, and "- - - >" represents a propagation direction of the random laser light;
FIG. 4 is a schematic diagram of the reverse random scattering of light between the perovskite grains and the formation of a closed optical circuit;
FIG. 5 is a schematic illustration of light randomly scattered at a graphical interface of a patterned sapphire substrate; wherein "→" represents CH3NH3PbBr3The propagation direction of spontaneous emission light generated by the perovskite thin film;
FIG. 6 is an incoherent random lasing spectrum of the perovskite random laser described above;
FIG. 7 is a coherent random lasing spectrum of a random laser under different perovskite synthesis conditions.
Detailed Description
The present invention will be described in further detail with reference to the following specific examples and the accompanying drawings. The procedures, conditions, experimental methods and the like for carrying out the present invention are general knowledge and common general knowledge in the art except for the contents specifically mentioned below, and the present invention is not particularly limited.
Example 1
1) FIG. 1 is a schematic diagram of the structure of the patterned substrate-based low-threshold optically pumped random laser. Firstly, preparing a patterned sapphire substrate 11 by adopting photoetching and Inductively Coupled Plasma (ICP) etching technologies, and cleaning the surface of the patterned sapphire substrate; the graph of the graphical sapphire substrate is conical, the diameter of the cone is 2.9 micrometers, the height of the cone is 1.9 micrometers, and the distance between the cones is 0.26 micrometer; and then synthesizing CH on the patterned sapphire substrate3NH3PbBr3A perovskite thin film 12 having a thickness of about 5 microns and consisting of a plurality of perovskite grains, the perovskite grains having a size of from 500 nanometers to 5 microns. In the above structure, the perovskite crystal grains serve as both the laser gain material and the light scattering medium.
2) FIG. 2 shows the patterned sapphire substrate-based CH prepared as described above3NH3PbBr3Scanning electron micrograph (top view) of perovskite random laser. The cone array on the patterned sapphire substrate and the prepared CH can be clearly seen from the figure3NH3PbBr3Perovskite crystal grains.
3) Fig. 3 is a schematic diagram of a device for obtaining random laser by the perovskite random laser under the optical pumping condition. The device comprises: a 400 nm pulse laser source 31, a total reflection mirror 32, a half-transmitting and half-reflecting beam splitter 33, a focusing lens 34 with a diameter of 50 mm and a focal length of 80 mm, and a spectrometer 35 for detecting random laser signals.
4) Under the pumping of 400 nm pulsed laser, CH3NH3PbBr3The perovskite thin film generates a large amount of spontaneous emission light which is randomly scattered among the perovskite crystal grains 41, and the randomly scattered light forms a specific closed optical loop 42, as shown in FIG. 4, when the gain in the closed optical loop is sufficiently largeAnd (4) laser. During the propagation process of these spontaneous emission lights, the patterned sapphire substrate can effectively change the propagation direction at the graphical interface, as shown in fig. 5, so that part of the dissipated light has an opportunity to re-enter the closed optical loop after being reflected by the patterned substrate, thereby improving the optical feedback (or gain) of the closed optical loop, and finally realizing the low-threshold optically pumped random laser output.
5) FIG. 6 shows the above-described patterned sapphire substrate-based CH3NH3PbBr3Incoherent random lasing spectra of perovskite random lasers. The laser spectrum is relatively smooth, the scattering length of the gain material is longer than the mean free path of light propagation, the mean free path is longer than the laser emission wavelength, the obtained light feedback is incoherent, and the generated random laser is incoherent.
6) Changing CH3NH3PbBr3The perovskite thin films with different grain sizes can be obtained under the perovskite synthesis conditions, when the mean free path of light propagation is equivalent to the laser emission wavelength, the obtained light feedback is coherent, and then the generated random laser is also coherent, as shown in fig. 7, the coherent random lasing spectrum of the random laser under different perovskite synthesis conditions is shown.
The protection of the present invention is not limited to the above embodiments. Variations and advantages that may occur to those skilled in the art may be incorporated into the invention without departing from the spirit and scope of the inventive concept, and the scope of the appended claims is intended to be protected.
Claims (7)
1. A low-threshold optically pumped random laser based on a patterned substrate is characterized in that the random laser structure comprises the patterned substrate and a laser gain material with high scattering capability arranged on the surface of the substrate; wherein the patterned substrate has a periodic or non-periodic pattern structure; the laser gain material is a zinc oxide, gallium nitride or halogen perovskite semiconductor material, is in a powder, gel or film form, has a particle size of 100-10 microns, and has a thickness of 2-500 microns.
2. The low threshold optically pumped random laser of claim 1 wherein said patterned substrate is a silicon substrate, a sapphire substrate, a polymer substrate, a silicon carbide substrate, a gallium nitride substrate, or a quartz substrate.
3. The low-threshold optically pumped random laser of claim 1, wherein said periodic or aperiodic patterned structure is fabricated using photolithographic, nanoimprint, or self-assembly methods.
4. The low threshold optically pumped random laser of claim 3, wherein said lithography comprises wet etching or dry etching, wherein dry etching comprises reactive ion etching, inductively coupled plasma etching, and high density plasma etching.
5. The low-threshold optically pumped random laser of claim 1, wherein said periodic or aperiodic patterned structure comprises a photonic crystal structure, a grating structure, a microlens array, and a self-assembled patterned structure.
6. The low-threshold optically pumped random laser of claim 1, wherein the pattern size of the periodic or aperiodic pattern structure is in the order of micrometers or nanometers, and the pattern shape includes a cone shape, a pyramid shape, a hemisphere shape, a Mongolian shape, a cylinder shape, a trench shape, a pit shape, a crater shape, a stripe shape, and a round hole shape.
7. The low-threshold optically pumped random laser of claim 1, wherein the pump light source employed is a continuous or pulsed laser light source; the laser wavelength of the pumping light source is 300-2000 nm; the optical pumping mechanism generates random laser by down-conversion, i.e. single photon absorption or up-conversion, i.e. multiphoton absorption, and the wavelength of the random laser is controlled by selecting different laser gain materials.
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| CN110349840B (en) * | 2019-07-10 | 2021-05-04 | 中国科学院长春光学精密机械与物理研究所 | Two-dimensional material composite substrate preparation system for realizing nitride controllable nucleation |
| WO2021098184A1 (en) * | 2019-11-22 | 2021-05-27 | 重庆大学 | Laser light deep compression method and laser |
| CN111864509A (en) | 2019-11-22 | 2020-10-30 | 重庆大学 | On-chip ultra-narrow linewidth laser |
| CN111900627B (en) * | 2020-06-23 | 2021-10-08 | 北京大学 | Perovskite micro-nano structure and preparation method and application thereof |
| CN115663569B (en) * | 2022-11-15 | 2023-11-21 | 中国科学院长春光学精密机械与物理研究所 | Method for enhancing random laser emission characteristics of perovskite microcrystals by laser irradiation |
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| CN1520618A (en) * | 2001-05-23 | 2004-08-11 | Laser parrering of devices | |
| CN102020239A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院金属研究所 | Patterning growth method of single-walled carbon nanotubes by surface ruling method |
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| US20060234269A1 (en) * | 2005-04-18 | 2006-10-19 | Matthew Asplund | Laser Modification and Functionalization of Substrates |
| US8969831B2 (en) * | 2013-02-15 | 2015-03-03 | Massachusetts Institute Of Technology | Excitation enhancement and extraction enhancement with photonic crystals |
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| CN1520618A (en) * | 2001-05-23 | 2004-08-11 | Laser parrering of devices | |
| CN102020239A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院金属研究所 | Patterning growth method of single-walled carbon nanotubes by surface ruling method |
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