CN109671797A - Drifting detector and preparation method thereof - Google Patents
Drifting detector and preparation method thereof Download PDFInfo
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- CN109671797A CN109671797A CN201811579268.XA CN201811579268A CN109671797A CN 109671797 A CN109671797 A CN 109671797A CN 201811579268 A CN201811579268 A CN 201811579268A CN 109671797 A CN109671797 A CN 109671797A
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- 238000002360 preparation method Methods 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 218
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 230000005641 tunneling Effects 0.000 claims description 58
- 238000002955 isolation Methods 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- 230000001788 irregular Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 description 15
- 230000005684 electric field Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229940083668 ketek Drugs 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- LJVAJPDWBABPEJ-PNUFFHFMSA-N telithromycin Chemical compound O([C@@H]1[C@@H](C)C(=O)[C@@H](C)C(=O)O[C@@H]([C@]2(OC(=O)N(CCCCN3C=C(N=C3)C=3C=NC=CC=3)[C@@H]2[C@@H](C)C(=O)[C@H](C)C[C@@]1(C)OC)C)CC)[C@@H]1O[C@H](C)C[C@H](N(C)C)[C@H]1O LJVAJPDWBABPEJ-PNUFFHFMSA-N 0.000 description 1
Classifications
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- H01L31/115—
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- H01L31/022408—
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- H01L31/022416—
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Abstract
The invention discloses a kind of drifting detector and preparation method thereof, which includes: the first conductive semiconductor substrate, tunnel oxide, the second conductive semiconductor layer, third conductive semiconductor layer, metal electrode layer and separation layer；Wherein, second conductive semiconductor layer is opposite with the conduction type of the first conductive semiconductor substrate; third conductive semiconductor layer is identical as the conduction type of the first conductive semiconductor substrate; second conductive semiconductor layer, the tunnel oxide being disposed below and the first conductive semiconductor substrate collectively form PN junction, which forms: Drift electrodes, the first protection ring, incident window and the second protection ring；Third conductive semiconductor layer, the tunnel oxide being disposed below and the first conductive semiconductor substrate collectively form height and tie, which forms: anode, the first grounding electrode and the second grounding electrode.The drifting detector realizes that large area, low noise, energy resolution are high, and has simple manufacture craft, can carry out high-volume manufacture.
Description
Technical Field
The disclosure belongs to the field of semiconductor detectors, and relates to a drift detector and a manufacturing method thereof, in particular to a drift detector with a tunneling oxide layer passivation contact structure and a manufacturing method thereof.
Background
With the rapid development of high-energy physics, nuclear physics technology, celestial physics, deep space exploration and aerospace industry, the detection and analysis of high-energy rays becomes more and more important. How to rapidly and accurately analyze the energy, the position and the quantity of high-energy rays or particles is the most critical problem faced by all related industries. At present, the relatively mature high-energy ray detectors mainly comprise a gas ionization chamber detector, a scintillator detector, a semiconductor detector and the like. Among them, semiconductor detectors are receiving increasing attention for their superior performance and well-established manufacturing processes.
The silicon-based PIN detector is the earliest and most mature application in semiconductor detectors, but the detector has the biggest defect that the capacitance of the detector is in direct proportion to the area of the device, so that the large-area high-performance detector is difficult to prepare.
The drift detector is firstly proposed by E.Gatti, P.Rehak in 1984, the device is a lateral fully-depleted device, and the maximum advantage is that the capacitance of the device is only related to the area of an anode and is not related to the total area of the device, so that the drift detector can manufacture the area of the detector to be large, and simultaneously can ensure extremely small capacitance, thereby greatly reducing the noise of the device and greatly improving the energy resolution.
At present, the drift detector preparation technology is quite mature abroad, and the drift detector is far ahead of the domestic level in both academic research and product commercialization. Foreign companies such as Ketek, Pnsensor and the like have already provided drift detector products with large areas and excellent performance, but the price is high, some technical barriers exist, the order quantity is limited, and the drift detector products are difficult to apply to deep space exploration and celestial body physical research in China in a large scale; in China, although several research institutions and companies try to achieve the effect, the research institutions and the companies cannot achieve good effects.
Therefore, it is urgently needed to develop an independently innovative drift detector, which realizes large area, low noise, high energy resolution, and has a simple manufacturing process, and can be manufactured in large quantities, so that the drift detector developed in China can break through the monopoly abroad.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a drift detector and a method of fabricating the same, which has excellent performance and high productivity to at least partially solve the technical problems set forth above.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a drift detector comprising: a first conductive semiconductor substrate; a tunneling oxide layer located on the surface of the first conductive semiconductor substrate; the second conductive semiconductor layer and the third conductive semiconductor layer are respectively positioned on the surface of the tunneling oxide layer; a metal electrode layer on the second conductive semiconductor layer and the third conductive semiconductor layer; and an isolation layer on a surface of the first conductive semiconductor substrate for isolating the second conductive semiconductor layer from the third conductive semiconductor layer; the second conductive semiconductor layer, the tunneling oxide layer positioned below the second conductive semiconductor layer and the first conductive semiconductor substrate jointly form a first tunneling junction, the first tunneling junction is a PN junction, and the PN junction is formed by: the drift electrode, the first protective ring, the incidence window and the second protective ring; the third conductive semiconductor layer, the tunneling oxide layer positioned below the third conductive semiconductor layer and the first conductive semiconductor substrate jointly form a second tunneling junction, the second tunneling junction is a high-low junction, and the high-low junction forms: an anode, a first ground electrode, and a second ground electrode.
In some embodiments of the present disclosure, the anode, the drift electrode, the first protection ring and the first ground electrode are located on one side of the first conductive semiconductor substrate and are distributed from the center to the periphery in sequence; and the incidence window corresponds to the regions where the anode and the drift electrode are positioned, the second protection ring corresponds to the first protection ring, and the second grounding electrode corresponds to the first grounding electrode.
In some embodiments of the present disclosure, the drift electrodes are in a ring structure separated from each other, the shape of the ring is circular, square, polygonal or irregular, the drift rings are separated from each other, and the anode is located at the center of the drift ring of the innermost ring.
In some embodiments of the present disclosure, each of the separated drift rings is connected to each other through a voltage divider.
In some embodiments of the present disclosure, the voltage divider is formed on the isolation layer between the drift rings, is made of a second conductive semiconductor film, and is integrated with the second conductive semiconductor layer forming the drift rings.
In some embodiments of the present disclosure, a part of the annular region where the drift ring is located is covered by the isolation layer, the uncovered region forms a first contact hole, and the metal electrode layer makes contact with the second conductive semiconductor layer in the drift ring through the first contact hole; besides completely covering the first contact holes, the metal electrode layer on each drift ring extends to the upper side of the isolation layer between the adjacent drift rings, and gaps or isolation layers exist between the metal electrode layer on the adjacent drift rings and the voltage divider between the adjacent drift rings; and/or the first protective ring and the second protective ring are separated concentric protective rings, a part of an annular area where the concentric protective rings are located is covered by the isolation layer, a second contact hole is formed in an uncovered area, and the metal electrode layer is contacted with the second conductive semiconductor layer in the concentric protective rings through the second contact hole; in addition to completely covering the second contact hole, the metal electrode layer on each concentric guard ring also extends above the isolation layer between adjacent guard rings with a gap between the metal electrode layer above the adjacent guard rings.
In some embodiments of the present disclosure, the drift electrode is a unitary spiral structure that extends spirally from the inside to the outside.
In some embodiments of the present disclosure, the metal electrode layers are located on the outermost and innermost rings of the spiral structure to form metal contacts for making connections to external circuitry.
In some embodiments of the present disclosure, the metal electrode layer entirely covers the incident window; or, the metal electrode layer only covers the annular area at the edge of the incidence window to form metal contact; preferably, the thickness of the tunneling oxide layer is between 0.5nm and 2 nm.
According to another aspect of the present disclosure, there is provided a method of manufacturing a drift detector, including: depositing isolating layer materials on the upper surface and the lower surface of the first conductive semiconductor substrate, and selectively removing the isolating layer materials in the areas where the anode, the drift electrode, the first protection ring, the first grounding electrode, the incidence window, the second protection ring and the second grounding electrode are to be formed, so that the surface of the first conductive semiconductor substrate is exposed; depositing a tunneling oxide layer and a second conductive semiconductor layer on the surface of the first conductive semiconductor substrate in the areas of the drift electrode, the first protection ring, the second protection ring and the incident window, so that the second conductive semiconductor layer, the tunneling oxide layer positioned below the second conductive semiconductor layer and the first conductive semiconductor substrate jointly form a PN junction; depositing a tunneling oxide layer and a third conductive semiconductor layer on the surface of the first conductive semiconductor substrate in the areas of the anode, the first grounding electrode and the second grounding electrode, so that the third conductive semiconductor layer, the tunneling oxide layer positioned below the third conductive semiconductor layer and the first conductive semiconductor substrate jointly form a high-low junction; depositing a metal electrode layer on the second conductive semiconductor layer and the third conductive semiconductor layer;
preferably, the following steps are performed before depositing the metal electrode layer on the second conductive semiconductor layer and the third conductive semiconductor layer: depositing an isolation layer, and manufacturing a contact hole above the region for forming the drift ring and the protection ring, so that a metal electrode layer deposited subsequently is contacted with the second conductive semiconductor layer in the drift ring through the contact hole and is contacted with the second conductive semiconductor layer in the protection ring through the contact hole;
preferably, when the drift electrodes are separate drift rings, a second conductive semiconductor film is deposited on the material of the isolation layer between the separate drift rings, and the second conductive semiconductor film is used as a voltage divider and is integrated with the second conductive semiconductor layer forming the drift rings.
(III) advantageous effects
According to the technical scheme, the drift detector and the manufacturing method thereof have the following beneficial effects:
(1) the drift electrode, the protection ring and the incidence window in the proposed new drift detector structure are obtained by a PN junction formed on a first conductive semiconductor substrate, the PN junction is formed by a second conductive semiconductor layer, a tunneling oxide layer positioned below the second conductive semiconductor layer and the first conductive semiconductor substrate, an anode and a grounding electrode are obtained by a high-low junction formed on the first conductive semiconductor substrate, the high-low junction is formed by a third conductive semiconductor layer, a tunneling oxide layer positioned below the third conductive semiconductor layer and the first conductive semiconductor substrate, wherein the PN junction is used as an emitter for causing photoelectric conversion, the effective collection of holes with mobility lower than that of electrons is ensured, when light is emitted to the PN junction, the generated electron-hole pairs are separated under the action of an internal electric field, so that carriers drift out of a depletion layer to form an external circuit current, and response current is obtained, and the high-low junction makes a metal electrode layer above the high-low junction realize good ohmic contact with the first conductive semiconductor substrate, the drift detector has the advantages of large area, low noise, high energy resolution, simple manufacturing process and capability of being manufactured in a large scale;
(2) when the drift electrodes are drift rings which are separated one by one, the drift rings are sequentially connected through the voltage divider, the voltage divider is essentially a divider resistor, and when the drift electrodes work normally, different voltages are applied to different drift electrodes only by loading the voltages at two ends of the voltage divider, so that the operation is simple;
(3) when the drift electrode is of an integrated spiral structure, the drift electrode of the structure not only plays a role of generating a drift electric field, but also plays a role of a voltage divider, and the structure of the voltage divider is not required to be additionally arranged, so that only voltages need to be loaded on the outermost ring and the innermost ring during normal work, and the operation is simple;
(4) the metal electrode layer covers the tunneling oxide layer passivation contact structure, further extends to the isolation layer between the outer ring and the outer ring for the drift ring, and extends to the isolation layer between the inner ring and the inner ring for the protection ring.
Drawings
Fig. 1 is a schematic cross-sectional view of a drift detector according to an embodiment of the disclosure.
Fig. 2 is a schematic diagram illustrating a partial enlarged cross-sectional structure of a drift detector including a voltage divider according to an embodiment of the disclosure.
Fig. 3 illustrates a plan view of an anode side of a drift detector according to an embodiment of the present disclosure.
Fig. 4 shows a plan view of the entrance window side of a drift detector according to an embodiment of the present disclosure.
Fig. 5 is a flow chart illustrating a method for fabricating a drift detector according to an embodiment of the present disclosure.
[ notation ] to show
11-a first conductive semiconductor substrate; 12-tunneling oxide layer;
13-a second conductive semiconductor layer; 14-a third conductive semiconductor layer;
15-an isolation layer; 16, 161, 162-metal electrode layer;
17-voltage divider.
Detailed Description
The drift detector is provided with a tunneling oxide layer passivation contact structure, the second conductive semiconductor layer and the tunneling oxide layer positioned below the second conductive semiconductor layer, the third conductive semiconductor layer and the tunneling oxide layer positioned below the third conductive semiconductor layer form the tunneling oxide layer passivation contact structure, the tunneling oxide layer passivation contact structure and the first conductive semiconductor substrate respectively form a PN junction and high and low junctions, the PN junction forms a structure of a drift electrode, a protection ring and an incidence window, and the high and low junctions form structures of an anode and a grounding electrode.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In the drawings, for clarity and conciseness in explaining the embodiments of the present invention, the explanation of elements irrelevant to the description is omitted, the same or extremely similar elements will be denoted by the same reference numerals throughout the specification, and the same components or structures will be denoted by the same filling in the drawings. In addition, in the drawings, element dimensions such as thickness, width, and the like are enlarged or reduced for more clear description, and thus the thickness, width, and the like of the embodiments of the present invention are not limited to those shown in the drawings. The number of the drift rings and the guard rings in the drawing can be set according to actual conditions.
Throughout the specification, when an element is described as "comprising" another element, the element should not be construed as excluding other elements as long as there is no specific conflicting description, and the element may include at least one other element. In addition, it will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. On the other hand, when an element such as a layer, film, region, or substrate is described as being "directly on" another element, it means that there is no intervening element between the two. "on the surface" means in direct contact. The terms "between" and "between" are inclusive of the endpoints. The "guard ring" in the claims or the specification is a generic term for "the first guard ring and the second guard ring". The "ground electrode" is a general term for "the first ground electrode and the second ground electrode".
In a first exemplary embodiment of the present disclosure, a drift detector is provided.
Fig. 1 is a schematic cross-sectional view of a drift detector according to an embodiment of the disclosure.
Referring to fig. 1, a drift detector of the present disclosure includes: a first conductive semiconductor substrate 11; a tunneling oxide layer 12 on the surface of the first conductive semiconductor substrate 11; a second conductive semiconductor layer 13 and a third conductive semiconductor layer 14 respectively located on the surface of the tunneling oxide layer 12; a metal electrode layer 16 on the second conductive semiconductor layer 13 and the third conductive semiconductor layer 14; and an isolation layer 15 on the surface of the first conductive semiconductor substrate 11 for isolating the second conductive semiconductor layer 13 and the third conductive semiconductor layer 14; the second conductive semiconductor layer 13 has a conductivity type opposite to that of the first conductive semiconductor substrate 11, the third conductive semiconductor layer 14 has a conductivity type same as that of the first conductive semiconductor substrate 11, the second conductive semiconductor layer 13, the tunneling oxide layer 12 located below the second conductive semiconductor layer, and the first conductive semiconductor substrate 11 together form a first tunneling junction, the first tunneling junction is a PN junction, and the PN junction is formed by: the drift electrode, the first protective ring, the incidence window and the second protective ring; the third conductive semiconductor layer 14, the tunneling oxide layer 12 located below the third conductive semiconductor layer, and the first conductive semiconductor substrate 11 together form a second tunneling junction, where the second tunneling junction is a high-low junction, and the high-low junction forms: an anode, a first ground electrode, and a second ground electrode.
The following describes each part of the drift detector of the present embodiment in detail with reference to the accompanying drawings.
In this embodiment, referring to fig. 1, the drift detector includes: the semiconductor device includes a first conductive semiconductor substrate 11, a tunnel oxide layer 12 formed directly on the first conductive semiconductor substrate 11, a second conductive semiconductor layer 13 formed directly on the tunnel oxide layer 12, and a third conductive semiconductor layer 14 formed directly on the tunnel oxide layer 12. The entire structure formed by the second conductive semiconductor layer 13 and the tunnel oxide layer 12 therebelow and the entire structure formed by the third conductive semiconductor layer 14 and the tunnel oxide layer 12 therebelow are all referred to as tunnel oxide layer passivation contact structures. The tunneling oxide layer passivation contact structure forms a structure of a drift ring, a guard ring (including a first guard ring and a second guard ring), an anode, a ground ring (including a first ground ring and a second ground ring), and an incidence window in the drift detector, as shown in fig. 1. Besides, the drift detector further comprises an isolation layer 15 directly grown on the first conductive semiconductor substrate, the isolation layer 15 is used for isolating the second conductive semiconductor layer 13 from the third conductive semiconductor layer 14, and the isolation layer can be an insulating dielectric layer material, and plays an electrical isolation role between the rings of the drift ring, between the rings of the protection rings, between the drift ring and the anode, and between the protection rings and the ground electrode.
As shown in fig. 1, the anode, the drift electrode, the first protection ring and the first ground electrode are located on one surface of the first conductive semiconductor substrate and are distributed from the center to the periphery in sequence; and the incidence window corresponds to the regions where the anode and the drift electrode are positioned, the second protection ring corresponds to the first protection ring, and the second grounding electrode corresponds to the first grounding electrode.
In this embodiment, the first conductive semiconductor substrate 11 (substrate for short) is a lightly doped semiconductor single crystal substrate, the doping type may be P-type or N-type, and may be various single crystal semiconductor substrates such as silicon, germanium, gallium arsenide, silicon carbide, and cadmium telluride, the second conductive semiconductor layer 13 has a conductivity type opposite to that of the first conductive semiconductor substrate 11, the third conductive semiconductor layer 14 has a conductivity type the same as that of the first conductive semiconductor substrate 11, and the first conductive semiconductor substrate 11 requires a very low doping concentration, so that the substrate is relatively easy to be depleted. When the conductivity type of the substrate is P-type, the conductive dopant may be a group III element In the periodic table of elements such As boron (B), aluminum (a1), gallium (Ga), or indium (In), when the conductivity type of the substrate is N-type, the conductive dopant may be a group V element In the periodic table of elements such As phosphorus (P), arsenic (As), bismuth (Bi), or antimony (Sb), and of course, other conductive dopants may be used As long As the desired conductivity type of the semiconductor substrate can be exhibited within the scope of the present disclosure.
Fig. 2 is a schematic diagram illustrating a partial enlarged cross-sectional structure of a drift detector including a voltage divider according to an embodiment of the disclosure. When the drift electrode in the structure shown in fig. 1 is a drift ring, a voltage divider is further included, a partial enlarged view of which is shown in fig. 2, and fig. 2 is an enlarged view of the structure of fig. 1, which is cut along the line a-a on the left side.
In some embodiments of the present disclosure, the drift electrodes are separate concentric rings forming separate drift rings, and the anode is located at the center of the drift ring of the innermost ring. The separated drift rings are connected by a voltage divider 17, as shown in fig. 2, the voltage divider 17 is formed on the isolation layer 15 between the drift rings, is made of a second conductive semiconductor film, and is integrated with the second conductive semiconductor layer forming the drift rings. In order to simplify the structure of the device and reduce contact points, a voltage divider is arranged between the drift rings, the nature of the voltage divider is a divider resistor, when the device works normally, different voltages are applied to different drift electrodes only by loading the voltages at two ends of the voltage divider, and the operation is simple.
The drift electrodes of the present disclosure are ring-shaped structures separated one by one, the shape of the ring is circular, square, polygonal or irregular, and the present embodiment is exemplified by concentric rings.
In other embodiments of the present disclosure, the drift electrode is a unitary spiral structure that extends spirally from the inside to the outside. When the drift electrode is an integrated spiral structure, the drift electrode of the structure plays a role in generating a drift electric field and also plays a role in a voltage divider, the structure of the voltage divider does not need to be additionally arranged, the metal electrode layers are positioned on the outermost ring and the innermost ring of the spiral structure to form metal contacts for being connected with an external circuit, and in normal work, voltage is loaded only on the outermost ring and the innermost ring, so that the operation is simple.
In one example, the conductivity type of the first conductive semiconductor substrate 11 is N-type, and the conductivity type of the second conductive semiconductor layer 13 in the tunnel oxide passivation contact structure for forming the structures such as drift ring, guard ring, entrance window, voltage divider, etc. should be P-type, the P-type conductive semiconductor layer forms a first tunnel junction through the middle tunnel oxide layer 12 and the first conductive semiconductor substrate 11, the first tunnel junction is a PN junction, and the potential distribution inside the first conductive (N-type conductive) semiconductor substrate can be adjusted by applying a reverse bias voltage to the first tunnel junction, so that carriers generated by high-energy rays can be effectively transported and finally collected by the anode. The conductivity type of the third conductive semiconductor layer 14 in the tunnel oxide passivation contact structure for forming the anode electrode and the ground electrode should be N-type, the N-type conductive semiconductor layer forms a second tunnel junction through the middle tunnel oxide layer 12 and the first conductive semiconductor substrate 11, the second tunnel junction is substantially a high-low junction, and the structure is to form a good ohmic contact between the metal electrode and the semiconductor substrate.
The tunnel oxide layer 12 in the tunnel oxide layer passivation contact structure may be various insulating dielectric layers, such as silicon oxide, aluminum oxide, silicon nitride, hafnium oxide, etc., and may be prepared by various methods, such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), Atomic Layer Deposition (ALD), etc., and in order to allow easy tunneling of carriers, the thickness of the tunnel oxide layer should not be too thick, and should be between 0.5nm and 2 nm. The tunnel oxide layer 12 is formed directly on the surface of the first conductive semiconductor substrate 11.
The second conductive semiconductor layer 13 or the third conductive semiconductor layer 14 in the tunnel oxide layer passivation contact structure may be formed using various semiconductor materials, such as amorphous silicon, microcrystalline silicon, polycrystalline silicon, and monocrystalline silicon, and may be other types of polycrystalline or monocrystalline semiconductor materials. The conductive semiconductor layer may be prepared using various methods, such as Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), Molecular Beam Epitaxy (MBE), and the like. The second conductive semiconductor layer and the third conductive semiconductor layer may be doped in situ during deposition, or an intrinsic semiconductor film may be deposited first and then doped later by using ion implantation, annealing or diffusion. If the conductive type of the conductive semiconductor layer is N-type, the conductive dopant may be a group V element such As phosphorus (P), arsenic (As), bismuth (Bi), or antimony (Sb), and if the conductive type of the conductive semiconductor layer is P-type, the conductive dopant may be a group III element such As boron (B), aluminum (a1), gallium (Ga), or indium (In), although other conductive dopants may be used As long As the second conductive semiconductor layer and the third conductive semiconductor layer can exhibit desired conductive types.
Fig. 3 illustrates a plan view of an anode side of a drift detector according to an embodiment of the present disclosure.
In one example, as shown in fig. 3, the drift electrodes are concentric rings formed by passivating contact structures with tunneling oxide layers one by one to form separate drift rings, the anode is located at the center of the drift ring of the innermost ring, the first protection ring is arranged on the periphery of the drift ring, and the first ground electrode is arranged on the periphery of the first protection ring; by applying different voltages to different drift rings, a transverse drift electric field is generated in the substrate, and in order to simplify the structure of the device and reduce contact points, a voltage divider integrated in the device is adopted to divide the voltages of the different drift rings. In this example, the second conductive semiconductor layer in the contact structure is passivated with a tunnel oxide layer forming a drift ring to form a voltage divider structure, and the conductive semiconductor layer forming the voltage divider and the conductive semiconductor layer forming the drift ring are integrated in a one-step process. The portion of the conductive semiconductor layer forming the voltage divider is formed over the isolation layer between the respective drift rings. In this example each drift ring is covered with a metal electrode layer.
In another example, the drift electrode is a unitary spiral structure extending spirally from inside to outside, the outermost drift ring and the innermost drift ring are unitary, and in this configuration, no voltage divider is required, and a gradient potential can be generated across the different drift rings as long as a desired voltage is applied between the outermost ring and the innermost ring, where the unitary drift ring spiral structure functions both to generate the drift electric field and to function as a voltage divider. In this example, metal contacts are formed on the drift ring only on the outermost and innermost rings for connection to external circuitry.
In one embodiment, referring to fig. 1 and 3, the drift electrodes are concentric rings formed by passivating contact structures with tunneling oxide layers one by one, so as to form separate drift rings, a part of a ring-shaped region where the drift rings are located is covered by an isolation layer, an uncovered region forms a first contact hole, and the metal electrode layer 161 is in contact with the second conductive semiconductor layer 13 in the drift rings through the first contact hole; in addition to completely covering the first contact hole, the metal electrode layer 161 on each drift ring extends to the outside (where the outside corresponds to the direction away from the center of the anode in fig. 1 with respect to the inside of the device) above the spacer 15 between adjacent drift rings, with a gap between the metal electrode layer on the adjacent drift rings, and with a spacer between the voltage dividers between the adjacent drift rings.
Fig. 4 shows a plan view of the entrance window side of a drift detector according to an embodiment of the present disclosure.
In one embodiment, protection rings are adopted to protect the outside of an effective area (an area corresponding to an incident window, an area corresponding to an anode and a drift electrode) of the detector, a first protection ring is arranged on the periphery of the drift electrode, and a second protection ring is arranged on the periphery of the incident window, so that the device is prevented from being broken down under a high-voltage condition, and meanwhile, the electric leakage can be effectively reduced. Referring to fig. 3 and 4, the guard rings are concentric rings similar to the drift ring formed in the region outside the active area, but the width of the rings, the distance between the rings, and the drift ring are different. The protective rings (including the first protective ring and the second protective ring) are also prepared by passivating the contact structure by using a tunneling oxide layer, wherein the conductive semiconductor layer is a second conductive semiconductor layer, and the second conductive semiconductor layer and the semiconductor substrate penetrate through the tunneling oxide layer to form a tunneling junction.
In this embodiment, referring to fig. 1, a part of an annular region where the guard ring is located is covered by the isolation layer, a second contact hole is formed in an uncovered region, and the metal electrode layer 162 is in contact with the second conductive semiconductor layer 13 in the guard ring through the second contact hole; in addition to completely covering the second contact hole, the metal electrode layer 162 on each guard ring also extends over the spacer 15 between adjacent guard rings to the inner side (where the inner side corresponds to the direction within the plane of the paper near the center of the anode in fig. 1 with respect to the outside of the device), with a gap between the metal electrode layer over the adjacent guard ring.
In the above embodiment, the metal electrode layer is optimally disposed, and not only covers the tunnel oxide layer passivation contact structure, but also further extends to the isolation layer between the outer ring and the outer ring for the drift ring, and further extends to the isolation layer between the inner ring and the inner ring for the guard ring, so that the field plate structure can reduce interface leakage under the action of an electric field generated by the metal electrode layer covering the isolation layer.
In some embodiments, the metal electrode layer entirely covers the incident window; or, the metal electrode layer only covers the annular area at the edge of the incidence window to form the metal contact.
In one example, the incident window is fabricated by using a tunnel oxide layer passivation contact structure, in which the conductive semiconductor layer is a second conductive semiconductor layer, and the second conductive semiconductor layer and the first conductive semiconductor substrate penetrate through the tunnel oxide layer to form a first tunnel junction, which is also a PN junction, and the substrate is completely depleted by applying a reverse bias voltage to the PN junction. The metal electrode may be completely covered on the entrance window, i.e. on the second conductive semiconductor layer, or a local metal contact may be formed only in one annular region at the edge of the entrance window region. By local is meant that the metal contact is formed at a portion of the edge ring region.
In one embodiment, at the very edge of the top and bottom of the device, there is one ground electrode, as shown by the first ground electrode and the second ground electrode in FIG. 1. The grounding electrode is also prepared by adopting a tunneling oxide layer passivation contact structure, a conductive semiconductor layer in the structure is a third conductive semiconductor layer, the third conductive semiconductor layer penetrates through the tunneling oxide layer and the substrate to form a second tunneling junction, but the second tunneling junction is not a PN junction and is a high-low junction, and the structure only plays a role in enabling the metal electrode and the substrate to form good ohmic contact. When the device works normally, the electrode is grounded, and the effect of reducing the electric leakage of the device is achieved.
In a second exemplary embodiment of the present disclosure, a method of fabricating a drift detector is provided.
Fig. 5 is a flow chart illustrating a method for fabricating a drift detector according to an embodiment of the present disclosure.
Referring to fig. 5, a method for manufacturing a drift detector of the present disclosure includes:
step S21: depositing isolating layer materials on the upper surface and the lower surface of the first conductive semiconductor substrate, and selectively removing the isolating layer materials in the areas where the anode, the drift electrode, the first protection ring, the first grounding electrode, the incidence window, the second protection ring and the second grounding electrode are to be formed, so that the surface of the first conductive semiconductor substrate is exposed;
step S22: depositing a tunneling oxide layer and a second conductive semiconductor layer on the surface of the first conductive semiconductor substrate in the areas of the drift electrode, the first protection ring, the second protection ring and the incident window, so that the second conductive semiconductor layer, the tunneling oxide layer positioned below the second conductive semiconductor layer and the first conductive semiconductor substrate jointly form a PN junction;
step S23: depositing a tunneling oxide layer and a third conductive semiconductor layer on the surface of the first conductive semiconductor substrate in the areas of the anode, the first grounding electrode and the second grounding electrode, so that the third conductive semiconductor layer, the tunneling oxide layer positioned below the third conductive semiconductor layer and the first conductive semiconductor substrate jointly form a high-low junction;
step S24: depositing an isolation layer, and manufacturing a contact hole on the region where the drift ring, the first protection ring and the second protection ring are formed;
function of step S24: a subsequently deposited metal electrode layer is brought into contact through the contact hole and the second conductive semiconductor layer in the drift ring, and through the contact hole and the second conductive semiconductor layer in the guard ring (including the first guard ring and the second guard ring, collectively referred to as the guard ring).
Step S25: depositing a metal electrode layer on the second conductive semiconductor layer and the third conductive semiconductor layer;
in the step S25, the metal electrode layer is optimally disposed, and covers the tunnel oxide layer passivation contact structure, and further extends to the isolation layer between the outer ring and the drift ring, and further extends to the isolation layer between the inner ring and the inner ring for the guard ring, so that the field plate structure can reduce the interface leakage under the action of the electric field generated by the metal electrode layer covering the isolation layer.
It should be noted that the above steps are not necessarily performed in sequence, for example, the steps S23 and S24 may be performed in an exchangeable sequence, and in addition, the contents of the respective steps may be performed synchronously or in combination, for example, the operation of depositing the tunnel oxide layer in step S23 and the operation of depositing the tunnel oxide layer in step S24 may be performed synchronously, and then the rest of the operations are performed in combination. In addition, the manufacturing method of the drift detector in the present disclosure is not limited to the above embodiments, and the manufacturing method as long as the corresponding device structure can be formed is within the protection scope of the present disclosure.
In other embodiments, when the drift electrodes are separate drift rings, a second conductive semiconductor film is deposited on the isolation layer material between the separate drift rings, and the second conductive semiconductor film is used as a voltage divider and is of a unitary structure with the second conductive semiconductor layer forming the drift rings.
Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure. And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Furthermore, the word "comprising" or "comprises" does not exclude the presence of elements or steps other than those listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A drift detector, comprising:
a first conductive semiconductor substrate;
a tunneling oxide layer located on the surface of the first conductive semiconductor substrate;
the second conductive semiconductor layer and the third conductive semiconductor layer are respectively positioned on the surface of the tunneling oxide layer;
a metal electrode layer on the second and third conductive semiconductor layers; and
the isolation layer is positioned on the surface of the first conductive semiconductor substrate and used for isolating the second conductive semiconductor layer from the third conductive semiconductor layer;
the second conductive semiconductor layer is opposite to the first conductive semiconductor substrate in conductivity type, the third conductive semiconductor layer is the same as the first conductive semiconductor substrate in conductivity type, the second conductive semiconductor layer, the tunneling oxide layer below the second conductive semiconductor layer and the first conductive semiconductor substrate jointly form a first tunneling junction, the first tunneling junction is a PN junction, and the PN junction is formed by: the drift electrode, the first protective ring, the incidence window and the second protective ring; the third conductive semiconductor layer, the tunneling oxide layer positioned below the third conductive semiconductor layer and the first conductive semiconductor substrate jointly form a second tunneling junction, the second tunneling junction is a high-low junction, and the high-low junction forms: an anode, a first ground electrode, and a second ground electrode.
2. The drift detector of claim 1,
the anode, the drift electrode, the first protection ring and the first grounding electrode are positioned on one surface of the first conductive semiconductor substrate and are distributed from the center to the periphery in sequence;
the incidence window, the second protection ring and the second grounding electrode are positioned on the other surface of the first conductive semiconductor substrate, the incidence window corresponds to the regions where the anode and the drift electrode are positioned, the second protection ring corresponds to the first protection ring, and the second grounding electrode corresponds to the first grounding electrode.
3. The drift detector of claim 1, wherein the drift electrodes are in the form of separate rings having a circular, square, polygonal or irregular shape forming separate drift rings, and the anode is centered on the innermost ring of the drift rings.
4. A drift detector according to claim 3, wherein each of said separate drift rings is connected to each other by a voltage divider.
5. The drift detector of claim 4, wherein said voltage divider is formed on the isolation layer between the drift rings, is made of a second conductive semiconductor thin film, and is of a unitary structure with the second conductive semiconductor layer forming the drift rings.
6. The drift detector of claim 4,
a part of an annular region where the drift ring is located is covered by the isolation layer, a first contact hole is formed in the uncovered region, and the metal electrode layer is in contact with the second conductive semiconductor layer in the drift ring through the first contact hole; besides completely covering the first contact holes, the metal electrode layer on each drift ring extends to the upper side of the isolation layer between the adjacent drift rings, and gaps or isolation layers exist between the metal electrode layer on the adjacent drift rings and the voltage divider between the adjacent drift rings; and/or the presence of a gas in the gas,
the first protective ring and the second protective ring are separated concentric protective rings, one part of an annular area where the concentric protective rings are located is covered by the isolation layer, a second contact hole is formed in an uncovered area, and the metal electrode layer is in contact with the second conductive semiconductor layer in the concentric protective rings through the second contact hole; in addition to completely covering the second contact hole, the metal electrode layer on each concentric guard ring also extends above the isolation layer between adjacent guard rings with a gap between the metal electrode layer above the adjacent guard rings.
7. The drift detector of claim 1, wherein said drift electrode is a unitary spiral structure extending spirally from inside to outside.
8. The drift detector of claim 7, wherein said metal electrode layers are located on outermost and innermost rings of the spiral structure forming metal contacts.
9. The drift detector of claim 1,
the metal electrode layer is completely covered on the incident window; or,
the metal electrode layer is only covered in the annular area at the edge of the incident window to form metal contact;
preferably, the thickness of the tunneling oxide layer is between 0.5nm and 2 nm.
10. A method of fabricating a drift detector, comprising:
depositing isolating layer materials on the upper surface and the lower surface of the first conductive semiconductor substrate, and selectively removing the isolating layer materials in the areas where the anode, the drift electrode, the first protection ring, the first grounding electrode, the incidence window, the second protection ring and the second grounding electrode are to be formed, so that the surface of the first conductive semiconductor substrate is exposed;
depositing a tunneling oxide layer and a second conductive semiconductor layer on the surface of the first conductive semiconductor substrate in the areas of the drift electrode, the first protection ring, the second protection ring and the incident window, so that the second conductive semiconductor layer, the tunneling oxide layer positioned below the second conductive semiconductor layer and the first conductive semiconductor substrate jointly form a PN junction;
depositing a tunneling oxide layer and a third conductive semiconductor layer on the surface of the first conductive semiconductor substrate in the areas of the anode, the first grounding electrode and the second grounding electrode, so that the third conductive semiconductor layer, the tunneling oxide layer positioned below the third conductive semiconductor layer and the first conductive semiconductor substrate jointly form a high-low junction; and
depositing a metal electrode layer on the second conductive semiconductor layer and the third conductive semiconductor layer;
preferably, the following steps are performed before depositing the metal electrode layer on the second conductive semiconductor layer and the third conductive semiconductor layer: depositing an isolation layer, and manufacturing a contact hole above the region for forming the drift ring and the protection ring, so that a metal electrode layer deposited subsequently is contacted with the second conductive semiconductor layer in the drift ring through the contact hole and is contacted with the second conductive semiconductor layer in the protection ring through the contact hole;
preferably, when the drift electrodes are separate drift rings, a second conductive semiconductor film is deposited on the material of the isolation layer between the separate drift rings, and the second conductive semiconductor film is used as a voltage divider and is integrated with the second conductive semiconductor layer forming the drift rings.
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