CN109671789A - 一种空间用砷化镓薄膜太阳电池阵及其制备方法 - Google Patents

一种空间用砷化镓薄膜太阳电池阵及其制备方法 Download PDF

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CN109671789A
CN109671789A CN201811357436.0A CN201811357436A CN109671789A CN 109671789 A CN109671789 A CN 109671789A CN 201811357436 A CN201811357436 A CN 201811357436A CN 109671789 A CN109671789 A CN 109671789A
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范襄
雷刚
金超
杨洪东
沈静曼
付坤
周品昕
姜德鹏
刘治钢
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Shanghai Institute of Space Power Sources
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Abstract

本发明公开一种空间用砷化镓薄膜太阳电池阵及其制备方法,制备方法包括以下步骤:1)在柔性基板表面涂覆液态硅橡胶;2)将薄膜太阳电池串铺设在对应未固化的硅橡胶表面,并进行大面积真空加压固化;3)在真空加压固化后的薄膜电池阵列区域表面涂覆液态透明硅橡胶;4)将柔性透明复合薄膜敷设在对应未固化的液态透明硅橡胶表面,并进行真空加压固化;5)最后,固化后进行溢胶擦洗及性能测试,完成柔性薄膜太阳电池阵的制备。本发明的方法不仅具有高效、轻质、柔性、可卷绕、适合异型曲面贴装等特点,而且具有优异的空间环境稳定性及较高的可靠性,在高、中、低轨道等空间环境飞行器领域具有广阔的应用。

Description

一种空间用砷化镓薄膜太阳电池阵及其制备方法
技术领域
本发明属于空间电源技术领域,具体涉及一种空间用砷化镓薄膜太阳电池阵及其制备方法。
背景技术
空间太阳电池阵作为各种飞行器的重要能源组成,其重量比功率、柔韧性、可卷绕性等对飞行器的有效载荷比、功能、发射成本等至关重要。
随着空间技术发展,空间飞行器对太阳电池阵性能提出了更高的要求,要求电池阵重量比功率达到300W/kg以上、轻质柔性、可卷绕等,现有太阳电池阵无法满足其应用要求。而砷化镓薄膜太阳电池单体具有超高的重量比功率(≥2000W/kg),且柔性、可卷绕等,但受限于封装材料及制备技术限制,如导致其无法实现空间应用。
为实现砷化镓薄膜太阳电池应用,近年来,国内外各单位开展砷化镓薄膜太阳电池的柔性封装,专利201611226357.7一种适用于临近空间超长航时飞行器的柔性太阳电池阵针对临近空间飞行器应用,以热塑性聚烯烃胶膜为粘接层(如EVA、POE等聚酯薄膜)、ETEF及PTFE为透明封装薄膜、薄膜太阳电池串采用电池单体之间交叠热压焊接等,制作了砷化镓薄膜太阳电池阵,专利201720075532.0用于临近空间环境的薄硅太阳电池组件也采用了类似的封装技术,该技术虽具有技术成熟度高、工艺简单等优点,但其采用的热塑性聚烯烃胶膜耐热性差、辐照衰减严重等,同时,交叠式焊接尚未进行减应力设计,无法满足空间应用。在其它封装技术方面,专利200910198508.6空间用GaAs/Ge单结砷化镓太阳电池阵,针对传统刚性太阳电池(~150μm)封装应用,以空间环境稳定性较好的底片硅橡胶、盖片透明硅橡胶作为粘接层,抗辐照玻璃作为封装层制作空间太阳电池阵,该封装方式也采用局部涂胶及常温常压下重物施压的方式封装,底片硅橡胶固化后仅需铺满60%电池片面积即可,而对于砷化镓薄膜太阳电池而言,该技术无法实现封装要求。
基于此,本发明针对砷化镓薄膜太阳电池空间应用问题,从空间环境特性分析出发,采用空间级硅橡胶作为粘接层、透明封装薄膜作为透光层以及采用真空加压和辊压覆膜等制备技术,实现了轻质柔性、可卷绕砷化镓薄膜太阳电池阵的制作,为大功率、多功能空间飞行器研制及其它民用领域应用提供轻质柔性、可卷绕薄膜太阳电池阵产品支持。
发明内容
本发明的目的在于提供一种空间用砷化镓薄膜太阳电池阵及其制备方法,以解决受限传统封装技术及封装材料限制,砷化镓薄膜太阳电池难以实现空间应用的问题。
为了解决上述技术问题,本发明的一种空间用砷化镓薄膜太阳电池阵,从下到上包括:柔性基板、硅橡胶、薄膜太阳电池串、透明硅橡胶和柔性透明封装薄膜,所述柔性基板内集成用于功率及信号传输的薄膜电子电路。
进一步,所述柔性基板为纤维增强的柔性聚酰亚胺复合薄膜,所述柔性透明封装薄膜为耐辐照透明聚合物表面制备氧化物涂层的复合薄膜,厚度为12.5~100μm,透光率大于90%。
进一步,所述薄膜电子电路预留有用于电子元件串/并联焊接的焊盘。
进一步,所述薄膜太阳电池串采用平面减应力互连片进行串联焊接的薄膜太阳电池单体阵列。
进一步,所述薄膜太阳电池串铺设为采用机械手抓取薄膜太阳电池串垂直放置于硅橡胶表面。
本发明的另一技术方案在于,提供上述砷化镓薄膜太阳电池阵的制备方法,包括以下步骤:
1)在柔性基板表面均匀涂覆液态硅橡胶;
2)将薄膜太阳电池串铺设在涂覆的液体硅橡胶表面,进行大面积真空加压固化;
3)在真空加压固化后的薄膜电池阵列区域表面涂覆液态透明硅橡胶;
4)将柔性透明封装薄膜敷设在涂覆液态透明硅橡胶表面,进行大面积加压固化;
5)固化后进行透明硅橡胶的溢胶清理及性能测试,完成柔性薄膜太阳电池阵的制备。
进一步,所述薄膜太阳电池串铺设为采用机械手抓取薄膜太阳电池串垂直放置于硅橡胶表面。
进一步,所述真空加压固化的压力为5kPa~70kPa、真空度高于0.1Pa,固化温度为20℃~100℃、加压时间15min~180min;所述涂覆液态透明硅橡胶为整体涂胶,涂胶面积为敷设柔性透明封装薄膜面积的0.05~0.85倍,涂胶厚度为30~200μm。
进一步,所述透明封装薄膜敷设为透明封装薄膜卷绕在压辊上进行辊压敷设,以去除胶层气泡;所述加压固化的压力为5kPa~70kPa、固化温度为40℃~100℃、加压时间10min~120min。
本发明的优点在于实现了柔性器件的大面积液态硅橡胶真空封装,所述柔性薄膜太阳电池阵采用耐辐照柔性透明复合薄膜及空间级硅橡胶进行大面积加压封装,不仅具有高效、轻质、柔性、可卷绕、适合异型曲面贴装等特点,而且具有优异的空间环境稳定性及较高的可靠性,在高、中、低轨道等空间环境飞行器领域具有广阔的应用。
附图说明
下面结合附图对发明作进一步说明:
图1为本发明提供的集成薄膜电子电路的柔性基板示意图;
图2为本发明提供的薄膜太阳电池串示意图;
图3为本发明提供的柔性透明封装薄膜示意图;
图4为本发明提供的柔性薄膜太阳电池阵俯视图;
图5为本发明提供的柔性薄膜太阳电池阵截面示意图。
具体实施方式
以下结合附图和具体实施例对本发明提出的一种空间用砷化镓薄膜太阳电池阵及其制备方法作进一步详细说明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比率,仅用以方便、明晰地辅助说明本发明实施例的目的。
本发明的一种空间用砷化镓薄膜太阳电池阵的制备方法,包括以下步骤:
1)柔性基板准备:将集成有薄膜电子电路的柔性基板固定于负压平台上;
2)单体电池焊接:采用电阻焊、超声焊以及热压焊中的任意一种进行薄膜太阳电池串、并联焊接;
3)底片胶涂覆:在柔性基板表面均匀涂覆液态硅橡胶;
进一步,所述涂覆液态硅橡胶为局部涂胶,涂胶面积为每一片薄膜太阳电池面积的0.05~0.85倍,涂胶厚度为10~200μm;
4)电池串布贴:将薄膜太阳电池串铺设在涂覆的液体硅橡胶表面,并进行真空加压固化;
进一步,所述真空加压固化的压力为5kPa~70kPa、真空度高于0.1Pa,固化温度为20℃~100℃、加压时间15min~180min。
5)透明硅橡胶涂覆:在真空加压固化后的薄膜电池阵列区域表面涂覆液态透明硅橡胶;
进一步,所述涂覆液态透明硅橡胶为整体涂胶,涂胶面积为敷设柔性透明封装薄膜面积的0.05~0.85倍,涂胶厚度为30~200μm。
6)覆透明封装膜:将柔性透明封装薄膜敷设在涂覆的液态透明硅橡胶表面,并进行加压固化;
进一步,所述透明封装薄膜敷设为透明封装薄膜卷绕在压辊上进行辊压敷设,以去除胶层气泡。
进一步,所述加压固化的压力为5kPa~70kPa、固化温度为40℃~100℃、加压时间10min~120min。
7)清胶与测试:固化后进行透明硅橡胶的溢胶清理及性能测试,完成柔性薄膜太阳电池阵的制备。
实施实例
一种空间用砷化镓薄膜太阳电池阵,从下到上包括柔性基板1、硅橡胶5、薄膜太阳电池串10、透明硅橡胶3和柔性透明封装薄膜8,所述柔性基板1内集成用于功率及信号传输的薄膜电子电路2,所述柔性基板1为纤维增强的柔性聚酰亚胺7复合薄膜,所述柔性透明封装薄膜为耐辐照透明聚合物11表面制备氧化物涂层12的复合薄膜,厚度为12.5~100μm,透光率大于90%。砷化镓薄膜太阳电池阵的制备方法包括以下步骤:
1)柔性基板准备
将集成有薄膜电子电路2的柔性基板1固定于负压平台上,所述薄膜电子电路2预留有用于电子元件串/并联焊接的焊盘4,焊盘尺寸与互连片9以及元器件引脚尺寸兼容;
2)薄膜太阳电池单体焊接
薄膜太阳电池6之间采用平面减应力互连片9连接,二者采用电阻焊、超声焊以及热压焊中的任意一种进行焊接,焊接前后电流衰减低于2%,焊点抗拉强度达到2.0N/mm2,完成薄膜太阳电池串10的制作;
3)底片胶涂覆
在柔性基板1表面均匀涂覆液态硅橡胶5,所述涂覆液态硅橡胶为局部涂胶,涂胶面积为每一片薄膜太阳电池面积的0.05~0.85倍,涂胶厚度为10~200μm;
4)薄膜太阳电池串布贴
底片胶涂覆后,采用机械手整体抓取薄膜太阳电池串10,根据设计定位垂直放置于硅橡胶5表面,完成薄膜太阳电池串10布贴后,进行真空加压固化,加压的压力为5kPa~70kPa、真空度高于0.1Pa,固化温度为20℃~100℃、加压时间15min~180min;
5)透明硅橡胶涂覆
待底片胶完全固化后,在薄膜电池阵列区域表面整体均匀涂覆液态透明硅橡胶3,涂胶面积为敷设柔性透明封装薄膜8面积的0.05~0.85倍,涂胶厚度为30~200μm;
6)覆透明封装膜
待覆透明封装膜8的电池阵列区域涂覆完成液态透明硅橡胶3后,将卷绕在压辊上的柔性透明封装薄膜8辊压在电池阵列区域,以去除胶层气泡,完成辊压后,进行加压固化,其中加压的压力为5kPa~70kPa、固化温度为40℃~100℃、加压时间10min~120min;
7)表面清洁与测试:
待液态透明硅橡胶3完全固化后,采用酒精、丙酮等有机溶剂进行溢胶清理,进一步进行薄膜太阳电池阵的光电性能、环境适应性能等测试,最终完成柔性薄膜太阳电池阵的制备。

Claims (10)

1.一种空间用砷化镓薄膜太阳电池阵,其特征在于,从下到上包括:柔性基板、硅橡胶、薄膜太阳电池串、透明硅橡胶和柔性透明封装薄膜;所述柔性基板内集成用于功率及信号传输的薄膜电子电路。
2.依据权利要求1所述的空间用砷化镓薄膜太阳电池阵,其特征在于,所述柔性基板为纤维增强的柔性聚酰亚胺复合薄膜。
3.依据权利要求1所述的空间用砷化镓薄膜太阳电池阵,其特征在于,所述柔性透明封装薄膜为耐辐照透明聚合物表面制备氧化物涂层的复合薄膜,厚度为12.5~100μm,透光率大于90%。
4.依据权利要求1所述的空间用砷化镓薄膜太阳电池阵,其特征在于,所述薄膜电子电路预留有用于电子元件串/并联焊接的焊盘。
5.依据权利要求1所述的空间用砷化镓薄膜太阳电池阵,其特征在于,所述薄膜太阳电池串采用平面减应力互连片进行串联焊接的薄膜太阳电池单体阵列。
6.依据权利要求1所述的空间用砷化镓薄膜太阳电池阵,其特征在于,所述涂覆液态硅橡胶为局部涂胶,涂胶面积为每一片薄膜太阳电池面积的0.05~0.85倍,涂胶厚度为10~200μm。
7.依据权利要求1所述的空间用砷化镓薄膜太阳电池阵的制备方法,其特征在于,包括以下步骤:
1)在柔性基板表面均匀涂覆液态硅橡胶;
2)将薄膜太阳电池串铺设在涂覆的液体硅橡胶表面,进行大面积真空加压固化;
3)在真空加压固化后的薄膜电池阵列区域表面涂覆液态透明硅橡胶;
4)将柔性透明封装薄膜敷设在涂覆液态透明硅橡胶表面,进行大面积加压固化;
5)固化后进行透明硅橡胶的溢胶清理及性能测试,完成柔性薄膜太阳电池阵的制备。
8.依据权利要求7所述的空间用砷化镓薄膜太阳电池阵的制备方法,其特征在于,所述薄膜太阳电池串铺设为采用机械手抓取薄膜太阳电池串垂直放置于硅橡胶表面。
9.依据权利要求7所述的空间用砷化镓薄膜太阳电池阵的制备方法,其特征在于,所述真空加压固化的压力为5kPa~70kPa、真空度高于0.1Pa,固化温度为20℃~100℃、加压时间15min~180min;所述涂覆液态透明硅橡胶为整体涂胶,涂胶面积为敷设柔性透明封装薄膜面积的0.05~0.85倍,涂胶厚度为30~200μm。
10.依据权利要求7所述的空间用砷化镓薄膜太阳电池阵的制备方法,其特征在于,所述透明封装薄膜敷设为透明封装薄膜卷绕在压辊上进行辊压敷设,以去除胶层气泡;所述加压固化的压力为5kPa~70kPa、固化温度为40℃~100℃、加压时间10min~120min。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277958A (zh) * 2019-07-11 2019-09-24 苏州馥昶空间技术有限公司 一种刚柔太阳电池阵及其制备方法
CN110600564A (zh) * 2019-09-17 2019-12-20 湖南纵横空天能源科技有限公司 柔性砷化镓组件及制作工艺
CN112599624A (zh) * 2020-12-15 2021-04-02 贵州梅岭电源有限公司 一种体装式一体化柔性太阳电池阵及其制备方法
CN115832089A (zh) * 2022-12-29 2023-03-21 苏州馥昶空间技术有限公司 一种空间柔性太阳电池阵及其封装方法和应用
CN116960229A (zh) * 2023-09-08 2023-10-27 哈尔滨工业大学 一种大面积空间全柔性太阳电池阵模块的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021099A (en) * 1988-08-09 1991-06-04 The Boeing Company Solar cell interconnection and packaging using tape carrier
CN104417008A (zh) * 2013-08-30 2015-03-18 信越化学工业株式会社 太阳能电池模组的制造
CN104733563A (zh) * 2013-12-24 2015-06-24 中国电子科技集团公司第十八研究所 长寿命柔性太阳能电池组件的制备方法
CN105552135A (zh) * 2015-12-07 2016-05-04 上海空间电源研究所 一种轻质柔性太阳电池模块及其制造方法
CN106449819A (zh) * 2016-09-14 2017-02-22 中国电子科技集团公司第四十八研究所 一种柔性太阳电池组件及其制备方法和应用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021099A (en) * 1988-08-09 1991-06-04 The Boeing Company Solar cell interconnection and packaging using tape carrier
CN104417008A (zh) * 2013-08-30 2015-03-18 信越化学工业株式会社 太阳能电池模组的制造
CN104733563A (zh) * 2013-12-24 2015-06-24 中国电子科技集团公司第十八研究所 长寿命柔性太阳能电池组件的制备方法
CN105552135A (zh) * 2015-12-07 2016-05-04 上海空间电源研究所 一种轻质柔性太阳电池模块及其制造方法
CN106449819A (zh) * 2016-09-14 2017-02-22 中国电子科技集团公司第四十八研究所 一种柔性太阳电池组件及其制备方法和应用

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277958A (zh) * 2019-07-11 2019-09-24 苏州馥昶空间技术有限公司 一种刚柔太阳电池阵及其制备方法
CN110600564A (zh) * 2019-09-17 2019-12-20 湖南纵横空天能源科技有限公司 柔性砷化镓组件及制作工艺
CN112599624A (zh) * 2020-12-15 2021-04-02 贵州梅岭电源有限公司 一种体装式一体化柔性太阳电池阵及其制备方法
CN115832089A (zh) * 2022-12-29 2023-03-21 苏州馥昶空间技术有限公司 一种空间柔性太阳电池阵及其封装方法和应用
CN115832089B (zh) * 2022-12-29 2024-02-02 苏州馥昶空间技术有限公司 一种空间柔性太阳电池阵及其封装方法和应用
CN116960229A (zh) * 2023-09-08 2023-10-27 哈尔滨工业大学 一种大面积空间全柔性太阳电池阵模块的制备方法

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