CN109671724A - Luminescent panel and display device - Google Patents
Luminescent panel and display device Download PDFInfo
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- CN109671724A CN109671724A CN201811574871.9A CN201811574871A CN109671724A CN 109671724 A CN109671724 A CN 109671724A CN 201811574871 A CN201811574871 A CN 201811574871A CN 109671724 A CN109671724 A CN 109671724A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Abstract
This application discloses a kind of luminescent panel and display device, luminescent panel includes: substrate, and the substrate includes the bent area of viewing area, non-display area and the connection viewing area and the non-display area；Transistor layer, the transistor layer setting are arranged on the substrate and relative to the viewing area and non-display area；Organic layer, the organic layer setting are arranged on the substrate and relative to the bent area；Routing layer, the routing layer are arranged on the organic layer；Wherein, the vertical height that the vertical height of the organic layer is greater than the transistor layer is in the presence of being broken to effectively reduce routing layer, and improves the yield of luminescent panel.
Description
Technical field
This application involves field of display technology, and in particular to a kind of luminescent panel and display device.
Background technique
In recent years, as Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) is with spontaneous
Light, low energy consumption, wide viewing angle, rich in color, quick response and the characteristics of can prepare many excellent characteristics such as flexible screen, cause section
Grind boundary and the great interest of industrial circle, it is considered to be the next-generation display technology of great potential.
In the prior art, in traditional flexible cryogenic polysilicon Organic Light Emitting Diode (Low Temperature Poly-
Silicon organic light emitting diode, LTPS-OLED) thin film transistor (TFT) (Thin Film
Transistor, TFT) in backboard manufacturing process, it, can be in bent area (Pad bending for the looper for enhancing luminescent panel
Area) one deeper hole (Deep Hole, DH) of etching, organic photoresist (Organic Deep is then filled in DH
Hole Material, ODH)；But the routing layer being located on ODH can be made Broken condition occur when being bent, it seriously affects
The yield of luminescent panel.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The embodiment of the present application provides a kind of luminescent panel and display device, it is possible to reduce and being broken occur in routing layer,
And improve the yield of luminescent panel.
The embodiment of the present application provides a kind of luminescent panel, comprising:
Substrate, the substrate include viewing area, the bending of non-display area and the connection viewing area and the non-display area
Area；
Transistor layer, the transistor layer setting are set on the substrate and relative to the viewing area and non-display area
It sets；
Organic layer, the organic layer setting are arranged on the substrate and relative to the bent area；
Routing layer, the routing layer are arranged on the organic layer；Wherein,
The vertical height of the organic layer is greater than the vertical height of the transistor layer.
In luminescent panel described herein, the organic layer includes the first extension and the second extension, described
The extending direction of first extension is horizontal extension, and the extending direction of second extension is vertical extends.
In luminescent panel described herein, the horizontal width of first extension is greater than second extension
Horizontal width, so that first extension and second extension form a supporting structure.
In luminescent panel described herein, the supporting structure offsets with the transistor layer.
In luminescent panel described herein, the vertical height of first extension is 0.3~0.7 micron.
In luminescent panel described herein, the luminescent panel further includes thin film transistor (TFT), the thin film transistor (TFT)
It is set in the transistor layer；
Wherein, the transistor layer further includes that the barrier layer, buffer layer, first grid that are cascading from bottom to up are exhausted
Edge layer, second grid insulating layer and interlayer dielectric layer；One end of the thin film transistor (TFT) is connect with the buffer layer, described thin
The other end of film transistor sequentially passes through the first grid insulating layer, second grid insulating layer and interlayer dielectric layer.
In luminescent panel described herein, first grid, the interlayer are provided on the second grid insulating layer
Second grid is provided on dielectric layer.
In luminescent panel described herein, flat organic layer and pixel definition are additionally provided on the transistor layer
Layer, the pixel defining layer cover the flat organic layer.
In luminescent panel described herein, the substrate is fabricated from a flexible material, and is provided with picture in the substrate
Plain area.
The embodiment of the present application also provides a kind of display device, comprising: shell and luminescent panel, the luminescent panel setting
On the housing, the luminescent panel is luminescent panel as described above.
Luminescent panel provided by the embodiments of the present application, including substrate, the substrate include viewing area, non-display area and connection
The bent area of the viewing area and the non-display area；Transistor layer, transistor layer setting is on the substrate and relatively
It is arranged in the viewing area and non-display area；Organic layer, the organic layer are arranged on the substrate and relative to the bending
Area's setting；Routing layer, the routing layer are arranged on the organic layer；Wherein, the vertical height of the organic layer is greater than described
The vertical height of transistor layer is in the presence of being broken to effectively reduce routing layer, and improves the yield of luminescent panel.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural schematic diagram of display device provided by the embodiments of the present application.
Fig. 2 is the structural schematic diagram of luminescent panel provided by the embodiments of the present application.
Fig. 3 is the partial enlarged view of luminescent panel provided by the embodiments of the present application.
Fig. 4 is the flow diagram of the preparation method of luminescent panel provided by the embodiments of the present application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall in the protection scope of this application.
In the prior art, in traditional flexible cryogenic polysilicon Organic Light Emitting Diode (Low Temperature Poly-
Silicon organic light emitting diode, LTPS-OLED) thin film transistor (TFT) (Thin Film
Transistor, TFT) in backboard manufacturing process, it, can be in bent area (Pad bending for the looper for enhancing luminescent panel
Area) one deeper hole (Deep Hole, DH) of etching, organic photoresist (Organic Deep is then filled in DH
Hole Material, ODH), ODH's controls with a thickness of 1.5 microns (μm)；But when being bent, due to stress neutral surface
Not on the routing layer in the area pad bending, stress release is uneven when causing to bend, and routing layer can be made Broken condition occur,
The yield of luminescent panel is seriously affected referring to Fig. 1, Fig. 1 is the structural representation of display device 1000 provided by the embodiments of the present application
Figure.The display device 100 may include luminescent panel 100, control circuit 200 and shell 300.It should be noted that Fig. 1
Shown in display device 1000 be not limited to the above content, can also include other devices, such as can also include camera,
Antenna structure, line unlocked state etc..
Wherein, luminescent panel 100 is set on shell 200.
In some embodiments, luminescent panel 100 can be fixed on shell 200,300 shape of luminescent panel 100 and shell
At confined space, to accommodate the devices such as control circuit 200.
In some embodiments, shell 300 can be to be fabricated from a flexible material, for example be plastic casing or silica gel shell
Deng.
Wherein, which is mounted in shell 300, which can be the master of display device 1000
Plate can integrate battery, antenna structure, microphone, loudspeaker, earphone interface, universal serial bus in control circuit 200 and connect
One, two or more in the functional units such as mouth, camera, range sensor, ambient light sensor, receiver and processor
It is a.
Wherein, which is mounted in shell 300, meanwhile, which is electrically connected to control circuit
On 200, to form the display surface of display device 1000.The luminescent panel 100 may include display area and non-display area.It should
Display area can be used to show the picture of display device 1000 or carry out touching manipulation etc. for user.The non-display area can
For various functional units to be arranged.
Referring to Fig. 2, Fig. 2 is the structural schematic diagram of luminescent panel provided by the embodiments of the present application, the luminescent panel 100 packet
It includes:
Substrate 10, the substrate 10 include viewing area 101, non-display area 102 and the connection viewing area 101 with it is described non-
The bent area 103 of viewing area 102；
Transistor layer 20, the transistor layer 20 are arranged in the substrate 10 and relative to the viewing areas 101 and non-
Viewing area 102 is arranged；
Organic layer 30, the organic layer 30 are arranged in the substrate 10 and are arranged relative to the bent area 103；
Routing layer 40, the routing layer 40 are arranged on the organic layer 30；Wherein,
The vertical height of the organic layer 30 is greater than the vertical height of the transistor layer 20.
It is appreciated that substrate 10 is made of viewing area 101, non-display area 102 and bent area 103, to luminescent panel 100
When bending, non-display area 102 is bent to the back side of viewing area 101 by bent area 103.And it is carried out to luminescent panel 100
When bending, stress can be generated, however, since stress is not when on the routing layer 40 on organic layer 30 bending can then generated
Stress release is uneven, to damage routing layer 40.
In the prior art, the vertical height of organic layer 40 is identical as the vertical height of transistor layer 20, shines in bending
When panel 100, the stress neutral surface that stress generates can keep the vertical height of organic layer 40 big in the top of routing layer 40, therefore
In the vertical height of transistor layer 20, stress neutral surface is made to be located at the either above or below of routing layer 40, preferably stress is neutral
Face is located on routing layer 40, so that stress can be discharged uniformly.
Luminescent panel 100 provided by the embodiments of the present application, including substrate 10, the substrate 10 include viewing area 101, non-aobvious
Show the bent area 103 in area 102 and the connection viewing area 101 and the non-display area 102；Transistor layer 20, the transistor
Layer 20 is arranged in the substrate 10 and is arranged relative to the viewing area 101 and non-display area 102；Organic layer 30, it is described to have
Machine layer 30 is arranged in the substrate 10 and is arranged relative to the bent area 103；Routing layer 40, the setting of routing layer 40 exist
On the organic layer 30；Wherein, the vertical height of the organic layer 30 is greater than the vertical height of the transistor layer 20, to subtract
Being broken occur in few routing layer 40, and improves the yield of luminescent panel 100.
In some embodiments, the luminescent panel 100 further includes thin film transistor (TFT) 50, and the thin film transistor (TFT) 50 is arranged
In in the transistor layer 20；
Wherein, the transistor layer 20 further includes the barrier layer 201 being cascading from bottom to up, buffer layer 202,
One gate insulating layer 203, second grid insulating layer 204 and interlayer dielectric layer 205；One end of the thin film transistor (TFT) 50 and institute
The connection of buffer layer 202 is stated, the other end of the thin film transistor (TFT) 50 sequentially passes through the first grid insulating layer 203, second gate
Pole insulating layer 204 and interlayer dielectric layer 205, the organic layer are made of organic photoresist.
Wherein, barrier layer 201 can be prepared by materials such as silica, and buffer layer can be by including element silicon, nitrogen
The material of element and oxygen element composition.
Wherein, polysilicon is provided on the first grid insulating layer 203, the polysilicon is used for and source electrode and drain electrode phase
Even, conducting channel is formed.
In some embodiments, first grid 501, the inter-level dielectric are provided on the second grid insulating layer 204
Second grid 502 is provided on layer 205.
In some embodiments, flat organic layer 60 and pixel defining layer 70, institute are additionally provided on the transistor layer 20
It states pixel defining layer 70 and covers the flat organic layer 60.
Wherein, OLED device 80 is additionally provided in the pixel defining layer 70, the OLED device 80 includes:
Anode 801 and hole transmission layer, luminescent layer, electron transfer layer and cathode (being not shown in figure) etc..Work as electric power
When supplied to appropriate voltage, positive hole will be combined with cathode charge in luminescent layer, generate it is bright, to generate red, green
With blue RGB three primary colors.Anode 801 is connected with the source electrode of thin film transistor (TFT) 50 or drain electrode.
Wherein, semiconductor layer 503 is additionally provided on the first grid insulating layer 203.
In some embodiments, the substrate 10 is fabricated from a flexible material, and is provided with pixel region in the substrate 10.
Wherein, substrate 10 can be made of high molecular materials such as polyimides (polyimide, PI), pixel region include but
It is not limited to R, G, B pixel.
Specifically, referring to Fig. 3, Fig. 3 is the partial enlarged view of luminescent panel provided by the embodiments of the present application.
Wherein, the organic layer 30 includes the first extension 301 and the second extension 302, first extension 301
Extending direction be horizontal extension, the extending direction of second extension 302 is vertical extends.
It is appreciated that organic layer 30 includes two parts, first part is the first extension 301, and the first extension 301 can
With in X direction or X negative direction is extended, second part is the second extension 302, the second extension 302 can along Y-direction or
Y negative direction is extended.
Wherein, the vertical height (that is, height in Y-direction) of the second extension 302 is more than or equal to 1.5 μm.
In some embodiments, the horizontal width of first extension 301 is greater than the level of second extension 302
Width, so that first extension 301 and second extension 302 form a supporting structure.
In some embodiments, the supporting structure offsets with the transistor layer 20.
Since the level that the horizontal width (width i.e. in X-direction) of the first extension 301 is greater than the second extension 302 is wide
Degree, therefore, the first extension 301 and the second extension 302 can generate a turning when contacting, and turning is supporting structure.
In some embodiments, the vertical height of first extension is 0.3~0.7 micron (μm).
Luminescent panel 100 provided by the embodiments of the present application, including substrate 10, the substrate 10 include viewing area 101, non-aobvious
Show the bent area 103 in area 102 and the connection viewing area 101 and the non-display area 102；Transistor layer 20, the transistor
Layer 20 is arranged in the substrate 10 and is arranged relative to the viewing area 101 and non-display area 102；Organic layer 30, it is described to have
Machine layer 30 is arranged in the substrate 10 and is arranged relative to the bent area 103；Routing layer 40, the setting of routing layer 40 exist
On the organic layer 30；Wherein, the vertical height of the organic layer 30 is greater than the vertical height of the transistor layer 20, to subtract
Being broken occur in few routing layer 40, and improves the yield of luminescent panel 100.
As shown in figure 4, Fig. 4 is the flow diagram of the preparation method of luminescent panel provided by the embodiments of the present application, the hair
The preparation method of optic panel is used to prepare luminescent panel as described above.The preparation method of the luminescent panel includes:
110, form a transistor layer relative to viewing area and non-display area in substrate, the transistor layer be from down toward
On be sequentially depositing to form barrier layer, buffer layer, first grid insulating layer, second grid insulating layer and interlayer dielectric layer；
Wherein, the semiconductor layer after being provided with patterned process on the first grid insulating layer, in the second gate
First grid after being provided with patterned process on the insulating layer of pole, after being provided with patterned process on the interlayer dielectric layer
Second grid.
120, organic layer is filled relative to bent area in substrate, the vertical thickness of the organic layer is greater than the transistor
The vertical thickness of layer；
Wherein, it is also deposited with the first metal layer on the organic layer, patterned process is carried out to the first metal layer
Obtain routing layer.The first metal layer includes titanium/aluminium/titanium coating.
130, the flat organic layer after setting gradually patterned process on the transistor layer, in the flat organic layer
Upper deposit patterned treated second metal layer and pixel defining layer.；
Wherein, the second metal layer is titanium oxide/silver/oxidation titanium coating, the flat organic layer and the pixel
Definition layer generally uses polyimides (polyimide, PI) to be made.
140, luminous organic material is deposited in the pixel defining layer, to form the luminescent panel.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, reference can be made to the related descriptions of other embodiments.
Above to a kind of luminescent panel, the preparation method of luminescent panel provided by the embodiment of the present application and display device into
It has gone and has been discussed in detail, specific examples are used herein to illustrate the principle and implementation manner of the present application, the above implementation
The explanation of example is merely used to help understand the technical solution and its core concept of the application；Those skilled in the art should
Understand: it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of technical characteristic
It is equivalently replaced；And these are modified or replaceed, each embodiment of the application that it does not separate the essence of the corresponding technical solution
The range of technical solution.
Claims (10)
1. a kind of luminescent panel characterized by comprising
Substrate, the substrate include the bent area of viewing area, non-display area and the connection viewing area and the non-display area；
Transistor layer, the transistor layer setting are arranged on the substrate and relative to the viewing area and non-display area；
Organic layer, the organic layer setting are arranged on the substrate and relative to the bent area；
Routing layer, the routing layer are arranged on the organic layer；Wherein,
The vertical height of the organic layer is greater than the vertical height of the transistor layer.
2. luminescent panel according to claim 1, which is characterized in that the organic layer includes the first extension and second
Extension, the extending direction of first extension are horizontal extension, and the extending direction of second extension is vertical extends.
3. luminescent panel according to claim 2, which is characterized in that the horizontal width of first extension is greater than described
The horizontal width of second extension, so that first extension and second extension form a supporting structure.
4. luminescent panel according to claim 3, which is characterized in that the supporting structure offsets with the transistor layer
It holds.
5. luminescent panel according to claim 3, which is characterized in that the vertical height of first extension for 0.3~
0.7 micron.
6. luminescent panel according to claim 1, which is characterized in that the luminescent panel further includes thin film transistor (TFT), institute
Thin film transistor (TFT) is stated to be set in the transistor layer；
Wherein, the transistor layer further includes barrier layer, buffer layer, the first grid insulation being cascading from bottom to up
Layer, second grid insulating layer and interlayer dielectric layer；One end of the thin film transistor (TFT) is connect with the buffer layer, the film
The other end of transistor sequentially passes through the first grid insulating layer, second grid insulating layer and interlayer dielectric layer.
7. luminescent panel according to claim 6, which is characterized in that be provided with the first grid on the second grid insulating layer
Pole is provided with second grid on the interlayer dielectric layer.
8. luminescent panel according to claim 1, which is characterized in that be additionally provided with flat organic layer on the transistor layer
And pixel defining layer, the pixel defining layer cover the flat organic layer.
9. luminescent panel according to claim 1, which is characterized in that the substrate is fabricated from a flexible material, in the base
Pixel region is provided in bottom.
10. a kind of display device characterized by comprising shell and luminescent panel, the luminescent panel are arranged in the shell
On body, the luminescent panel is luminescent panel as described in any one of claim 1 to 9.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811574871.9A CN109671724B (en) | 2018-12-21 | 2018-12-21 | Light-emitting panel and display device |
| PCT/CN2019/079017 WO2020124835A1 (en) | 2018-12-21 | 2019-03-21 | Light-emitting panel and display apparatus |
| US16/343,292 US11552158B2 (en) | 2018-12-21 | 2019-03-21 | Light emitting panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811574871.9A CN109671724B (en) | 2018-12-21 | 2018-12-21 | Light-emitting panel and display device |
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| Publication Number | Publication Date |
|---|---|
| CN109671724A true CN109671724A (en) | 2019-04-23 |
| CN109671724B CN109671724B (en) | 2020-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811574871.9A Active CN109671724B (en) | 2018-12-21 | 2018-12-21 | Light-emitting panel and display device |
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| Country | Link |
|---|---|
| US (1) | US11552158B2 (en) |
| CN (1) | CN109671724B (en) |
| WO (1) | WO2020124835A1 (en) |
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| CN112420796A (en) * | 2020-11-18 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and display device |
| CN112447924A (en) * | 2019-08-30 | 2021-03-05 | 上海和辉光电有限公司 | Display panel, preparation method and display device comprising same |
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| Publication number | Publication date |
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| US20210328001A1 (en) | 2021-10-21 |
| WO2020124835A1 (en) | 2020-06-25 |
| CN109671724B (en) | 2020-11-24 |
| US11552158B2 (en) | 2023-01-10 |
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