CN109666922A - A kind of graphite base - Google Patents
A kind of graphite base Download PDFInfo
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- CN109666922A CN109666922A CN201811405465.XA CN201811405465A CN109666922A CN 109666922 A CN109666922 A CN 109666922A CN 201811405465 A CN201811405465 A CN 201811405465A CN 109666922 A CN109666922 A CN 109666922A
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- arc groove
- groove
- circle
- symmetry
- circular
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of graphite bases, belong to epitaxial growth equipment field.The substrate being placed in circular groove is mainly the sidewall sections close contact with the plane of symmetry position of second part, therefore n arc groove is opened up on the side wall of second part, and n, when being even number, the angle between the line of symmetry of at least one arc groove and the plane of symmetry of second part in n arc groove is less than 90 °；When n is odd number, the arcwall face of one of arc groove intersects with the plane of symmetry of second part, and this set can guarantee that the position that arc groove opens up is provided with the part of the side wall close contact of substrate and second part.Further, the corresponding central angle of camber line is less than 150 °, substrate will not be in contact with the arcwall face of arc groove, reduce substrate, the epitaxial layer on substrate and the contact area between the side wall of second part, so that temperature whole on substrate and epitaxial layer is more uniform, and then improve the Luminescence Uniformity of finally obtained epitaxial wafer.
Description
Technical field
The present invention relates to epitaxial growth equipment field, in particular to a kind of graphite base.
Background technique
Graphite base is Metal Organic Chemical Vapor Deposition (English: Metal-organic Chemical
Vapor Deposition, referred to as: MOCVD) equipment a part, graphite base is cylindrical body, the end of one end of graphite base
Multiple groups circular groove unit, radial distribution of the multiple groups circular groove unit along the end face of one end of graphite base are provided on face.
Every group of circular groove unit includes multiple circular grooves, and circumferential direction of multiple circular grooves along the end face of one end of graphite base is equal
Cloth, the other end of graphite base are connected with the driving structure of MOCVD device.
It when preparing epitaxial wafer, needs for substrate to be placed in circular groove, driving structure controls graphite base with its axis
Line is rotation axis rotation.MOCVD device controls air-flow and forms epitaxial layer in substrate surface, finally obtains epitaxial wafer.But with this
When epitaxial wafer is formed on the substrate in mode, the epitaxial layer on substrate and substrate is subject to centrifugal forces, substrate and epitaxial layer
The side in the center of circle far from graphite base all can be with the side wall close contact of circular groove.And since MOCVD device is to pass through lining
Contact between bottom and circular groove transfers heat on substrate, therefore the side wall close contact of epitaxial layer and circular groove
Partial temperature can be higher, and then temperature is relatively low for the other parts of epitaxial layer, the difference of different parts temperature in epitaxial layer
The Luminescence Uniformity that will lead to the epitaxial wafer that final production obtains is poor.
Summary of the invention
The embodiment of the invention provides a kind of graphite bases, can be improved the Luminescence Uniformity of finally obtained epitaxial wafer.
The technical solution is as follows:
The embodiment of the invention provides a kind of graphite base, the graphite base be cylindrical body, the one of the graphite base
Be provided with multiple groups circular groove unit on the end face at end, the multiple groups circular groove unit along the end face radial distribution, often
The group circular groove includes multiple circular grooves, and circumferential direction of the multiple circular groove along the end face is uniformly distributed, described more
The center of circle of a circular groove on same cylindrical surface,
The circular groove is divided into first part and second by the cylindrical surface where the center of circle of each circular groove
Part, the first part are the part in the center of circle on the close cylindrical surface in the circular groove, and the second part is institute
The part in the center of circle in circular groove far from the cylindrical surface is stated,
It is provided with n arc groove on the side wall of each second part, wherein n >=1 and n are integer, each described
Arc groove includes an arcwall face, the arcwall face on the end surface be projected as camber line, the circular groove is described
Be projected as circle on end face, central angle corresponding to the camber line less than 150 °,
When n is even number, the n arc groove is separately positioned on the two sides of the plane of symmetry of the second part, the n arc
Angle between the line of symmetry of at least one arc groove in shape slot and the plane of symmetry of second part is less than 90 °；When n is odd number,
The arcwall face of one of them arc groove intersects with the plane of symmetry of the second part.
Optionally, when n is even number, the n arc groove is symmetricly set on the two sides of the plane of symmetry of the second part, n
When for odd number, the arcwall face of one of them arc groove intersects with the plane of symmetry of the second part, and in addition (n-1) is a described
Arc groove is symmetricly set on the two sides of the plane of symmetry of the second part.
Optionally, the center of circle of the camber line is overlapped with the circular center of circle.
Optionally, circle corresponding to the circular arc where the projection of n arcwall face of the n arc groove on the end surface
Heart angle is 90 °~120 °.
Optionally, the difference of the radius of the camber line and the circular radius is 0.5~2mm.
Optionally, central angle corresponding to the circular arc and the diameter on the cylindrical surface are negatively correlated.
Optionally, central angle corresponding to the camber line is 45 °~120 °.
Optionally, the difference of the radius of the camber line and the circular radius is 1mm.
Optionally, the diameter on the difference of the radius of the camber line and the circular radius and the cylindrical surface is negatively correlated.
Optionally, n >=2, and the n arc groove is arranged at intervals on the circular groove.
Technical solution provided in an embodiment of the present invention has the benefit that due to being placed on when preparing epitaxial wafer
Substrate in circular groove is mainly the sidewall sections close contact with the plane of symmetry position of second part, therefore second
Open up n arc groove on partial side wall, and when n is even number, the line of symmetry of at least one arc groove in n arc groove and the
Angle between the plane of symmetry of two parts is less than 90 °；When n is odd number, the arcwall face of one of arc groove and second part
Plane of symmetry intersection, this set can guarantee that the position that arc groove opens up is provided with the side wall close contact of substrate and second part
Part.Further, the corresponding central angle of camber line is less than 150 °, even if substrate can be along vertical in circular groove in this case
The axis direction of circular groove slightly moves, and position of the substrate in circular groove can still be limited by the side wall of second part, lining
Bottom will not be fully sunk in arc groove, and substrate will not be in contact with the arcwall face of arc groove, reduce substrate, the extension on substrate
Contact area between layer and the side wall of second part, so that temperature whole on substrate and epitaxial layer is more uniform,
And then improve the Luminescence Uniformity of finally obtained epitaxial wafer.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of graphite base provided in an embodiment of the present invention；
Fig. 2 is a kind of side view of graphite base provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of circular groove provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another circular groove provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of graphite base provided in an embodiment of the present invention, and Fig. 2 is that the embodiment of the present invention provides
A kind of graphite base side view, in conjunction with Fig. 1 and Fig. 2, which is cylindrical body.It is arranged on the end face 1 of graphite base
There are multiple groups circular groove unit 2, radial equipartition of the multiple groups circular groove unit 2 along the end face of graphite base 1, every group of circular groove
Unit 2 includes multiple circular grooves 3, and circumferential direction of multiple circular grooves 3 along the end face of graphite base 1 is uniformly distributed, and multiple circles are recessed
The center of circle O of slot 3 is on same cylindrical surface 4.
Each circular groove 3 is divided into first part 31 and second part 32 by cylindrical surface 4, and first part 31 is round recessed
For slot 3 close to a part of the center of circle O on cylindrical surface 4, second part 32 is one of center of circle O of the circular groove 3 far from cylindrical surface 4
Point.
In the present embodiment, cylindrical surface 4 is the curved surface of a certain cylindrical body.
Fig. 3 is a kind of structural schematic diagram of circular groove provided in an embodiment of the present invention, in conjunction with Fig. 1~3, each second
Divide on 32 side wall and is provided with n arc groove 5, wherein n >=1 and n are integer, and each arc groove 5 includes an arcwall face,
Arcwall face (not shown) is projected as camber line 51 on end face 1, and circular groove 3 is projected as circle 33, arc on end face 1
Central angle θ is less than 150 ° corresponding to line 51.
As shown in figure 3, n arc groove 5 is separately positioned on the two sides of the plane of symmetry 321 of second part 32, n arc groove 5
In the line of symmetry 5a of at least one arc groove 5 and the plane of symmetry 321 of second part 32 between angle γ less than 90 °；Fig. 4 is
A kind of structural schematic diagram of circular groove provided in an embodiment of the present invention, as shown in figure 4, the plane of symmetry 321 of second part 32 with
The arcwall face intersection of one arc groove 5.
Since the substrate when preparing epitaxial wafer, being placed in circular groove 3 is mainly the plane of symmetry with second part 32
The sidewall sections close contact of 321 positions, therefore n arc groove 5 is opened up on the side wall of second part 32, and n is even
When number, the angle between the line of symmetry of at least one arc groove 5 and the plane of symmetry 321 of second part 32 in n arc groove 5 is small
In 90 °；When n is odd number, the arcwall face of one of arc groove 5 intersects with the plane of symmetry 321 of second part 32, and this set can
The position that guarantee arc groove 5 opens up is provided with the part of the side wall close contact of substrate and second part 32.Further, camber line
51 corresponding central angle θ are less than 150 °, even if substrate can be along the axis of vertical circular groove 3 in circular groove 3 in this case
Line direction is slightly moved, and position of the substrate in circular groove 3 can still be limited by the side wall of second part 32, and substrate will not be complete
It falls into arc groove 5, substrate will not be in contact with the arcwall face of arc groove 5, reduce substrate, the epitaxial layer on substrate and second
Contact area between the side wall of part 32, so that temperature whole on substrate and epitaxial layer is more uniform, Jin Erti
The Luminescence Uniformity of high finally obtained epitaxial wafer.
As shown in figure 3, the center of circle O of camber line 51 can be overlapped with the center of circle O of circle 33.This set, can also be compared with convenient for production
The contact area between substrate and the side wall of the second circular groove 3 is dramatically reduced.
As shown in figure 3, arc groove 5 further includes two sides 52, two sides 52 of arc groove 5 are located at arcwall face
Both ends, projection of two sides 52 on end face 1 are located at two of circular groove 3 diametrically.This structure is easier to set
It sets.
The intersection of the side wall of the side of arc groove 5 and second part 32 is straight line in Fig. 3, provided in an embodiment of the present invention
In other situations, the side of arc groove 5 and the side wall joint of second part 32 can be arc transition.To further decrease substrate
Impact between graphite base.
In conjunction with Fig. 3 and Fig. 4, when n is even number, n arc groove 5 can be symmetricly set on the plane of symmetry 321 of second part 32
Two sides, as shown in figure 4, the arcwall face of one of arc groove 5 intersects with the plane of symmetry 321 of second part 32, n when n is odd number
A arc groove 5 is symmetricly set on the two sides of the plane of symmetry 321 of second part 32.In both cases, in substrate and second
Divide the 32 place setting arc grooves 5 there are primary friction, can preferably reduce the friction between substrate and second part 32.
In the present embodiment, n can be 2 in Fig. 3, can also be 3 in Fig. 4, but in other embodiments of the invention, n
It can also be 1 or 4 or 5.
Further, n >=2, n arc grooves 5 are arranged at intervals on circular groove 3.It is adjacent in this set in conjunction with Fig. 3
Two arc grooves 5 between the marginal portion 34 of circular groove 3 can play a supporting role to substrate, disperse substrate and arc groove
Existing active force between 5 edge, guarantees the service life of graphite base.
As shown in figure 3, shortest distance D of the arcwall face of every two adjacent arc groove 5 between the projection on end face 1 is equal
It can be equal.This set is conducive to the active force further dispersed between substrate and graphite base, advantageously ensures that graphite base
Service life.
As shown in figure 3, central angle θ corresponding to camber line 51 can be 45 °~120 °.The corresponding central angle θ of camber line 51 is set
It sets in this range, can preferably reduce the friction between substrate and circular groove 3.
Illustratively, n arcwall face of n arc groove 5 center of circle corresponding to the circular arc 6 where the projection on end face 1
Angle α is 90 °~120 °.It is recessed with circle that this set can largely reduce substrate while guaranteeing the intensity of graphite base
Friction between slot 3.In Fig. 4, the central angle alpha of circular arc 6 is 120 °.
Optionally, n arcwall face of n arc groove 5 central angle alpha corresponding to the circular arc 6 where the projection on end face 1
It is negatively correlated with the diameter on cylindrical surface 4.The diameter on cylindrical surface 4 is bigger, substrate and circular groove 3 in the circular groove 3 on cylindrical surface 4
Contact surface it is smaller, therefore this set can satisfy to reduce and guarantee graphite-based while friction between substrate and circular groove 3
The use intensity of seat.
Illustratively, the absolute value of the difference of the central angle alpha of circular arc 6 corresponding on every two adjacent cylindrical surface 4
Equal, this structure is relatively easy to realize, the effect for reducing the friction between substrate and circular groove 3 is also preferable.
As shown in figure 3, the difference d of the radius of the radius and circle 33 of camber line 51 can be 0.5~2mm.This set can expire
Foot reduces the use intensity for guaranteeing graphite base while friction between substrate and circular groove 3.
Preferably, the difference d of the radius of camber line 51 and the radius of circle 33 can be 1mm.It can be further ensured that graphite-based at this time
The use intensity of seat, and do not interfere with the Luminescence Uniformity of finally obtained epitaxial wafer.
Optionally, the diameter of the difference d and cylindrical surface 4 of the radius of camber line 51 and the radius of circle 33 are negatively correlated.Cylindrical surface 4
Diameter is bigger, and the contact surface of substrate and circular groove 3 is smaller in the circular groove 3 on cylindrical surface 4, therefore this set can expire
Foot reduces the use intensity for guaranteeing graphite base while friction between substrate and circular groove 3.
Illustratively, the difference d of the radius of corresponding camber line 51 and the radius of circle 33 on every two adjacent cylindrical surface 4
Absolute value can be equal, and this structure is relatively easy to realize, reduce the effect of the friction between substrate and circular groove 3 also compared with
It is good.
Further, the difference d of the radius of corresponding camber line 51 and the radius of circle 33 on every two adjacent cylindrical surface 4
Absolute value can be 0.5mm.The effect of friction between the obtained reduction substrate of this set and circular groove 3 is also preferable.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of graphite base, the graphite base is cylindrical body, is provided with multiple groups on the end face of one end of the graphite base
Circular groove unit, along the radial distribution of the end face, circular groove described in every group includes the multiple groups circular groove unit
Multiple circular grooves, circumferential direction of the multiple circular groove along the end face is uniformly distributed, and the center of circle of the multiple circular groove exists
On same cylindrical surface, which is characterized in that
The circular groove is divided into first part and second part by the cylindrical surface where the center of circle of each circular groove,
The first part is close to the part in the center of circle on the cylindrical surface in the circular groove, and the second part is the circle
The part in the center of circle in groove far from the cylindrical surface,
It is provided with n arc groove on the side wall of each second part, wherein n >=1 and n are integer, each arc
Slot includes an arcwall face, the arcwall face on the end surface be projected as camber line, the circular groove is in the end face
On be projected as circle, central angle corresponding to the camber line less than 150 °,
When n is even number, the n arc groove is separately positioned on the two sides of the plane of symmetry of the second part, the n arc groove
In the line of symmetry of at least one arc groove and the plane of symmetry of second part between angle less than 90 °；When n is odd number, wherein
The arcwall face of one arc groove intersects with the plane of symmetry of the second part.
2. graphite base according to claim 1, which is characterized in that when n is even number, the n arc groove is symmetrical arranged
In the two sides of the plane of symmetry of the second part, n be odd number when, the arcwall face of one of them arc groove with described second
The plane of symmetry intersection divided, in addition (n-1) a described arc groove is symmetricly set on the two sides of the plane of symmetry of the second part.
3. graphite base according to claim 2, which is characterized in that the center of circle of the camber line and the circular center of circle weight
It closes.
4. graphite base according to claim 3, which is characterized in that n arcwall face of the n arc groove is at the end
Central angle corresponding to the circular arc where projection on face is 90 °~120 °.
5. graphite base according to claim 4, which is characterized in that central angle corresponding to the circular arc and the cylinder
The diameter in face is negatively correlated.
6. according to the described in any item graphite bases of claim 3~5, which is characterized in that the radius of the camber line and the circle
The difference of the radius of shape is 0.5~2mm.
7. graphite base according to claim 6, which is characterized in that the radius of the camber line and the circular radius it
Difference is 1mm.
8. according to the described in any item graphite bases of claim 3~5, which is characterized in that the radius of the camber line and the circle
The diameter on the difference of the radius of shape and the cylindrical surface is negatively correlated.
9. according to the described in any item graphite bases of claim 3~5, which is characterized in that central angle corresponding to the camber line
It is 45 °~120 °.
10. graphite base according to claim 1, which is characterized in that n >=2, and n arc groove interval is arranged
On the circular groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811405465.XA CN109666922B (en) | 2018-11-23 | 2018-11-23 | Graphite base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811405465.XA CN109666922B (en) | 2018-11-23 | 2018-11-23 | Graphite base |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109666922A true CN109666922A (en) | 2019-04-23 |
| CN109666922B CN109666922B (en) | 2021-04-27 |
Family
ID=66142179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811405465.XA Active CN109666922B (en) | 2018-11-23 | 2018-11-23 | Graphite base |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541752A (en) * | 1978-09-18 | 1980-03-24 | Mitsubishi Electric Corp | Semiconductor substrate for gaseous-phase epitaxial growth |
| CN105803425A (en) * | 2016-05-16 | 2016-07-27 | 中国科学院半导体研究所 | Reaction base of MOCVD (Metal-Organic Chemical Vapor Deposition) reaction device |
| CN105810630A (en) * | 2008-08-29 | 2016-07-27 | 威科仪器有限公司 | Wafer carrier with varying thermal resistance |
-
2018
- 2018-11-23 CN CN201811405465.XA patent/CN109666922B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541752A (en) * | 1978-09-18 | 1980-03-24 | Mitsubishi Electric Corp | Semiconductor substrate for gaseous-phase epitaxial growth |
| CN105810630A (en) * | 2008-08-29 | 2016-07-27 | 威科仪器有限公司 | Wafer carrier with varying thermal resistance |
| CN105803425A (en) * | 2016-05-16 | 2016-07-27 | 中国科学院半导体研究所 | Reaction base of MOCVD (Metal-Organic Chemical Vapor Deposition) reaction device |
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| Publication number | Publication date |
|---|---|
| CN109666922B (en) | 2021-04-27 |
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