CN109664172A - The thining method of sic wafer - Google Patents
The thining method of sic wafer Download PDFInfo
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- CN109664172A CN109664172A CN201811617560.6A CN201811617560A CN109664172A CN 109664172 A CN109664172 A CN 109664172A CN 201811617560 A CN201811617560 A CN 201811617560A CN 109664172 A CN109664172 A CN 109664172A
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- Prior art keywords
- laser
- sic wafer
- groove
- depth
- wafer
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A kind of thining method of sic wafer, it include: that the sic wafer back side is divided into safe ring region and laser pre-processing area, the laser pre-processing area is the border circular areas that area is less than backside of wafer area, and the safe ring region surrounds the edge rings region of the laser pre-processing area；Laser scanning is carried out in the laser pre-processing area, forms laser groove；The sic wafer back side with the laser groove is roughly ground, until being milled to first object thickness；The sic wafer back side of the first object thickness is refined, until being milled to the second target thickness.The thining method of the sic wafer improves the fragmentation problem during sic wafer thinning back side, surface and sub-surface damage after improving sic wafer thinning back side, and reduces the waste that grinding uses grinding wheel, reduces processing cost.
Description
Technical field
The present invention relates to field of semiconductor technology more particularly to a kind of thining methods of sic wafer.
Background technique
Silicon carbide power device relies on itself excellent properties, is suitable for the extreme operating environments such as high temperature, high pressure and high radiation.
But silicon carbide device still can generate biggish heat when high-power, extreme environment works, passing through reduces device substrate portion
The thermal resistance divided can effectively reduce device power loss and improve its thermal diffusivity, play to device overall performance and service life most important
Effect.
Currently, it is using thinning back side of silicon wafer machine to silicon carbide whisker that industry, which prepares the mainstream technology of large-size ultra-thin silicon carbide,
Circle carries out back side grinding and is thinned, and can effectively reduce the thermal resistance of substrate, enhances device performance.But due to silicon carbide belong to it is hard crisp
Property difficult-to-machine material, causes the wear resistance ratio of grinding wheel high.
In addition, with the increase of wafer size, when wafer is thinned to certain thickness or less, the stress of sic wafer and
Damage is serious, and wafer is easily chipping, causes wafer that yield rate is thinned extremely low.
More contents being thinned in relation to existing wafer, can refer to Publication No. CN107749391A and CN107649785A
Chinese patent application.
Summary of the invention
Problems solved by the invention is to provide a kind of thining method of sic wafer, comprising: by the sic wafer back side
It is divided into safe ring region and laser pre-processing area, the laser pre-processing area is the circle that area is less than backside of wafer area
Shape region, the safe ring region surround the edge rings region of the laser pre-processing area；In laser pre-add work area
Domain carries out laser scanning, forms laser groove；The sic wafer back side with the laser groove is roughly ground, directly
To being milled to first object thickness；The sic wafer back side of the first object thickness is refined, until being milled to
Two target thicknesses.
Optionally, by the way of point three steps, the laser scanning is carried out in the laser pre-processing area；The first step is swept
The depth for retouching etching is the 40%~60% of the laser depth of groove；The depth of second step scanning etching is the laser groove
The 20%~40% of depth；The depth of third step scanning etching is the 10%~20% of the laser depth of groove；Described first
Step scanning, second step scanning and the accumulative working depth of third step scanning are equal to the sic wafer and overall thickness are thinned
90%~95%.
Optionally, the laser scanning uses wavelength for the ultraviolet laser of 355nm.
Optionally, the plane pattern of the laser groove is two groups of interlaced parallel lines；Adjacent two described flat
Spacing between shape straight line is S, and the groove depth of the laser groove is H, 0.2≤S/H≤5.
Optionally, the forward speed of the laser scanning is 5mm/sec~100mm/sec；In used laser, swash
Light repetition rate is 10KHz~80KHz, and laser power is 0.2watt~1watt, and assist gas pressure is 0.3Mpa~0.8Mpa.
Optionally, the thickness proportion that the thinned thickness of the corase grinding and the fine grinding are thinned is about 8.5:1~9.5:1.
Optionally, the thinned part of the corase grinding includes laser heat affected layer.
Optionally, second target thickness is between 50 μm~120 μm；Described second is milled in the sic wafer
After target thickness, quality testing is carried out to the sic wafer.
Optionally, the diameter dimension of the sic wafer is at 6 inches or more.
Optionally, the minimum truncation width of the safe ring region be the sic wafer radius length 2%~
5%.
In the one aspect of technical solution of the present invention, before corase grinding, by the auxiliary of laser scanning, process sharp
Light groove reduces the waste of grinding process medium plain emery wheel to accelerate subsequent corase grinding speed.Silicon carbide is assisted by laser processing
Backside of wafer grinding is thinned, and can prepare large size silicon-carbide wafer, be effectively improved during sic wafer thinning back side
Fragmentation problem, surface and sub-surface damage after improving sic wafer thinning back side, and reduce the loss that grinding uses grinding wheel
Amount reduces processing cost.
Detailed description of the invention
Fig. 1 is the schematic rear view of sic wafer in embodiment；
Fig. 2 is the schematic diagram that the sic wafer back side carries out after laser scanning in embodiment；
Fig. 3 is the cut-away section structural schematic diagram of structure shown in Fig. 2；
Fig. 4 is the enlarged diagram of part-structure in Fig. 3.
Specific embodiment
When being thinned for the grinding of large size silicon-carbide backside of wafer, the sic wafer fragmentation phenomenon of generation, silicon carbide whisker
The problems such as excessive is lost in surface quality difference and abrasive grinding wheel after circle thinning back side, proposes that system is thinned in a kind of laser assisted grinding
The method of standby large size silicon-carbide wafer.
For this purpose, the present invention provides a kind of thining method of new sic wafer, to solve above-mentioned deficiency.
More clearly to indicate, the present invention is described in detail with reference to the accompanying drawing.
The present invention provides a kind of thining method of silicon carbide (SiC) wafer, comprising:
Step 1: the sic wafer back side is divided into safe ring region and laser pre-processing area, the laser pre-add
Work area domain is the border circular areas that area is less than backside of wafer area, and the safe ring region surrounds the laser pre-processing area
Edge rings region；
Step 2: carrying out laser scanning in the laser pre-processing area, laser groove is formed；
Step 3: being roughly ground to the sic wafer back side with the laser groove, until being milled to the first mesh
Mark thickness；
Step 4: the sic wafer back side to the first object thickness is refined, until being milled to the second mesh
Scale.
The diameter dimension of the sic wafer can be at 6 inches or more.Due in whole process, passing through laser processing
Auxiliary, the thinned overall thickness of the material of 6 inches or more of thinning back side of silicon wafer is larger, relatively high with method sexual valence of the invention.
The back side of sic wafer is ground in the present invention and is thinned, is suitable for preparing the ultra-thin carbonization of large scale (6 inches or more)
Silicon Wafer (the ultra-thin thickness that is often referred to is at 120 μm or less).
In step 1, the safe ring region not by post laser preprocessing (laser preprocessing, that is, laser scanning), this
A little regions are referred to as edge-protected ring region.
Safe ring region is located at the crystal round fringes that wafer carbon face is not formed by laser preprocessing, it is possible to reduce because laser is swept
It retouches stress caused by processing sic wafer and causes warpage deformation of diamond wafer, reduce thinning back side fragment rate.
In step 1, the minimum truncation width of the safe ring region is the 2% of the sic wafer radius length
~5%.
That is, laser pre-processing area correspond to border circular areas diameter be sic wafer back side diameter 90%~
96%.This 2%~5% ratio, can adjust with wafer size, and wafer size is bigger, and corresponding ratio can be smaller.It is right
For 6 inches or more of wafer, it is enough to have ensure that safe ring region is capable of providing for 2%~5% aforementioned proportion
Support force, to avoid whole wafer warpage deformation of diamond wafer caused by stress because of caused by laser processing.
In step 2, the laser scanning can use wavelength for the ultraviolet laser of 355nm.For single-crystal silicon carbide,
Using ultraviolet band laser, can obtain to the maximum absorption efficiency of projectile energy, and the action of ultraviolet laser effect for being 355nm
More preferably.
In step 2, in order to make above-mentioned ultraviolet laser in processing silicon carbide whisker bowlder, it is recessed that excellent laser can be obtained
Slot adjusts laser processing technology parameter.The forward speed of the laser scanning is 5mm/sec~100mm/sec；It is used to swash
In light device, laser repetition rate be 10KHz~80KHz, laser power be 0.2watt~1watt, assist gas pressure be 0.3Mpa~
0.8Mpa。
In step 2, laser scanning manufacturing is carried out in pre-processing area according to preset pattern trace into V-type
Slot.
The plane pattern of the laser groove is two groups of interlaced parallel lines.That is, laser groove is flat
Face pattern be not limited only to be it is lateral, longitudinal, criss-cross at any angle, correspondingly, the pattern that straight line is formed can be
What above-mentioned any angle was formed in a crisscross manner, it is also possible to the array of figure of test pattern, i.e., orthogonal two groups of straight lines.
Spacing between adjacent two parallel lines (i.e. adjacent twice parallel laser groove) is S, the laser
The groove depth of groove is H.In view of the thinned efficiency of material in Grinding Process, 0.2≤S/H≤5 are controlled.
The present invention carries out in laser scanning, processes the slot once formed, depth can be between 5 μm~150 μm, width
It can also be between 5 μm~150 μm.And the laser groove in step 2, refer to finally formed slot, be not intended to limit be by
Processing is formed several times.
In step 2, by the way of point three steps, the laser scanning is carried out in the laser pre-processing area, thus
Form laser groove.Wherein, the depth of first step scanning etching is the 40%~60% of the laser depth of groove；Second step is swept
The depth for retouching etching is the 20%~40% of the laser depth of groove；The depth of third step scanning etching is the laser groove
The 10%~20% of depth.
Also, the first step scanning, second step scanning and the third step scan accumulative working depth and are equal to institute
State overall thickness is thinned in sic wafer 90%~95%.
The first step scanning, second step scanning and the third step scan accumulative working depth and are equal to the carbonization
The 90%~95% of overall thickness is thinned in Silicon Wafer, and therefore, the thickness before sic wafer is thinned is about 350 μm, and second
Target thickness can be calculated at 50 μm~120 μm, and the thinned overall thickness of grinding (including roughly grinding and refining) is about in 180 μ
Between m~250 μm.Correspondingly, laser scanning manufacturing total depth is about between 150 μm~240 μm.Added by present laser single
The depth limit of work, in present laser scanning machining, usual single process depth is (i.e. currently manufactured to come out at 120 μm or less
Ultraviolet laser can reach being formed in the single process of slot to sic wafer, and depth is at 120 μm or less).It is swept in conjunction with laser
Processing quality and processing efficiency are retouched, therefore, laser scanning manufacturing is divided into three steps and carried out by selection, wherein first step working depth
Accounting for about to be ground and is thinned the 40%~60% of overall thickness, second step working depth, which accounts for about to be ground, is thinned the 20%~40% of overall thickness,
Third step working depth, which accounts for about to be ground, is thinned the 10%~20% of overall thickness.
In step 3, the thinned thickness of the corase grinding and the thickness proportion being thinned of refining are about 8.5:1~9.5:
1.This parameter logistic can be adjusted with the variation of material thickness thinning.
It should be noted that laser scanning can generate one layer of laser heat affected layer below laser groove.
The thinned part of the corase grinding includes laser heat affected layer.
In step 4, fine grinding carries out accurate grinding, the mechanical damage that front corase grinding generates is thinned.
After step 3, the first object of sic wafer is with a thickness of between 64 μm~140 μm.After step 4,
Obtained second target thickness is between 50 μm~120 μm and the second target thickness is less than first object thickness.Namely
It says, the second final target thickness is at 120 μm or less.And when being just that typically in thinned 120 μm or less, if it is using existing
Thining method, stress and the damage for exactly normally resulting in sic wafer are serious, and wafer is easily chipping, leads to yield rate
It is extremely low.And method provided by the invention can solve such case.
It, i.e., can be to the carbonization after the sic wafer is milled to second target thickness after step 4
Silicon Wafer carries out quality testing.
In the present invention, overall thickness, reasonable distribution laser scanning depth, distribution corase grinding are thinned according to the grinding of sic wafer
With fine grinding ratio.
In the present invention, before corase grinding, by the auxiliary of laser scanning, laser groove is processed, to accelerate subsequent thick
Speed is ground, the waste of grinding process medium plain emery wheel is reduced.It is thinned, can be made by the sic wafer back side grinding of laser processing auxiliary
Standby large size silicon-carbide wafer out, the fragmentation problem being effectively improved during sic wafer thinning back side improve silicon carbide whisker
Surface and sub-surface damage after circle thinning back side, and the waste that grinding uses grinding wheel is reduced, reduce processing cost.In big ruler
The efficient Ultra-precision Turning field of very little sic wafer has a good application prospect.
Further, laser heat affected layer is reserved in corase grinding thickness thinning, i.e., the described laser groove total depth is slightly less than
Thickness thinning is roughly ground, corresponding surface is suitable for subsequent fine grinding after guaranteeing corase grinding progress, further reduces damage.
Further, it is laser machined using stepping mode, and calculates the depth processed in each substep of laser, and according to
Preset pattern trace carries out the laser Pocket Machining of laser scanning, further promotes process efficiency.
Embodiment
6 inch silicon carbide Silicon Wafers are carried out back thinning.
The original depth for confirming 6 inches of (diameter about 150mm) sic wafers is 350 μm, and the second target thickness is about 120
μm, the thickness that need to be thinned is about 230 μm.
As shown in Figure 1, safe ring region 120 and laser pre-processing area 110 is arranged at 100 back side of sic wafer.Its
In, the truncation width W of laser pre-processing area 110 is 4mm (account for about diameter 2.6%).
Wafer is placed on laser scanning workbench, setting laser scanning technological parameter is as follows:
Adjust focal length, first time laser power is 0.55watt, repetition rate 15KHz, scanning speed 30mm/s, auxiliary
Helping air pressure is 0.6Mpa；
Adjust focal length, second laser power is 0.33watt, repetition rate 25KHz, scanning speed 40mm/s, auxiliary
Helping air pressure is 0.5Mpa；
Focal length is adjusted, third time laser power is that 0.44watt (occupy first time laser power and second of laser power
Between), repetition rate 15KHz, scanning speed 40mm/s, assist gas pressure 0.5Mpa.
Desired guiding trajectory is first transversal scanning, and aftertable is rotated by 90 ° longitudinal scanning, and sweep span is 100 μm in length and breadth, is swept
It is as shown in Figure 2 to retouch pattern result.
After laser scanning, the partial region of wafer shown in Fig. 2, which is cutd open, shows structure as shown in figure 3, corresponding cutting angle is vertical
Directly the back side shown in Fig. 2 carries out cutting to front, obtains the schematic diagram of corresponding cross-section structure.
Laser groove 121, about 90 μm of the groove width D of laser groove 121 it can be seen that, after scanning three times, are formd by Fig. 3
Left and right.
Meanwhile the spacing between the parallel laser groove 121 of adjacent twice is S, the groove depth of laser groove 121 is H,
In, S/H is about 0.5 or so, as shown in Figure 3.
Referring to FIG. 4, showing subregional enlarged structure in the middle part of Fig. 3.
The present embodiment is calculated by corresponding, show that the ratio of substep laser scanning, each working depth are as follows:
First time scan depths are 110 μm, as shown in the h1 in Fig. 4；
Second of scan depths is 80 μm, as shown in (h2-h1) in Fig. 4；
Third time scan depths are 20 μm, as shown in (h3-h2) in Fig. 4.
It is found that the total depth of the present embodiment laser preprocessing is 210 μm, laser scanning adds up working depth, and (i.e. laser is pre-
Processing total depth) it is about the 95% of subsequent corase grinding thickness thinning.
It is also further displayed in Fig. 4, in 121 bottom of laser groove, reserves the laser heat affected layer of 10 μ m thicks, such as Fig. 4
In d1 shown in.
Later, it is roughly ground.Rough grinding wheel type selecting is the vitrified bonded grinding wheel of 2000#, speed of mainshaft 2000r/
Min, roughly grinding average feed speed is 35 μm/min, cooling using deionized water.
Roughly grinding thickness thinning is 220 μm, this thickness, that is, laser preprocessing total depth adds the thickness of laser heat affected layer.Slightly
It wears away in thin thickness such as Fig. 4, shown in (h3+d1).
Corase grinding is cut after processing is completed, is measured to wafer, thickness is thinned to 130 μm.At this point, wafer residual thickness is the
One target thickness.
Later, it is refined.Finishing wheel type selecting is 8000# vitrified bonded grinding wheel, speed of mainshaft 3000r/min, is subtracted
It is thin with a thickness of 10 μm, refining average feed speed is 6 μm/min, cooling using deionized water.
Refining thickness thinning is 10 μm, (it should be noted that being only signal in each figure, in order to show as shown in d2 in Fig. 4
Each thickness thinning is not shown by actual ratio completely).
After refining to wafer, wafer thickness is down to 120 μm, this is with a thickness of the second target thickness.
After wafer reaches the second target thickness, wafer surface roughness (Sa): 0.8nm is detected；The final thickness of wafer:
120μm；Wafer total thickness variations amount (TTV): 2.2 μm；Wafer bow (Bow): 2.5 μm；Silicon wafer warpage degree (Warp): 4.8 μ
m.Also, the case where backside of wafer is almost without surface damage or sub-surface damage.
To sum up, the present invention is thinned by the sic wafer back side grinding of laser processing auxiliary, can prepare large scale carbonization
Silicon Wafer, the fragmentation problem being effectively improved during sic wafer thinning back side, after improving sic wafer thinning back side
Surface and sub-surface damage, and be greatly decreased grinding use grinding wheel waste, reduce processing cost.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of thining method of sic wafer characterized by comprising
The sic wafer back side is divided into safe ring region and laser pre-processing area, the laser pre-processing area is area
Less than the border circular areas of backside of wafer area, the safe ring region surrounds the edge rings area of the laser pre-processing area
Domain；
Laser scanning is carried out in the laser pre-processing area, forms laser groove；
The sic wafer back side with the laser groove is roughly ground, until being milled to first object thickness；
The sic wafer back side of the first object thickness is refined, until being milled to the second target thickness.
2. the thining method of sic wafer as described in claim 1, which is characterized in that by the way of point three steps, in institute
It states laser pre-processing area and carries out the laser scanning；
The depth of first step scanning etching is the 40%~60% of the laser depth of groove；
The depth of second step scanning etching is the 20%~40% of the laser depth of groove；
The depth of third step scanning etching is the 10%~20% of the laser depth of groove；
The first step scanning, second step scanning and the third step scan accumulative working depth and are equal to the silicon carbide whisker
The 90%~95% of the thinned overall thickness of circle.
3. the thining method of sic wafer as claimed in claim 2, which is characterized in that the laser scanning use wavelength for
The ultraviolet laser of 355nm.
4. the thining method of sic wafer as claimed in claim 3, which is characterized in that the plane pattern of the laser groove
For two groups of interlaced parallel lines；Spacing between adjacent two flat shape straight lines is S, the groove depth of the laser groove
For H, 0.2≤S/H≤5.
5. the thining method of sic wafer as claimed in claim 4, which is characterized in that the forward speed of the laser scanning
For 5mm/sec~100mm/sec；In used laser, laser repetition rate is 10KHz~80KHz, and laser power is
0.2watt~1watt, assist gas pressure are 0.3Mpa~0.8Mpa.
6. the thining method of sic wafer as described in claim 1, which is characterized in that the corase grinding thinned thickness and institute
Stating the thinned thickness proportion of fine grinding is 8.5:1~9.5:1.
7. the thining method of sic wafer as described in claim 1, which is characterized in that the thinned part of the corase grinding includes
Laser heat affected layer.
8. the thining method of sic wafer as described in claim 1, which is characterized in that second target thickness is 50 μm
Between~120 μm；After the sic wafer is milled to second target thickness, quality inspection is carried out to the sic wafer
It surveys.
9. the thining method of sic wafer as described in claim 1, which is characterized in that the silicon carbide whisker diameter of a circle ruler
It is very little at 6 inches or more.
10. the thining method of sic wafer as described in claim 1, which is characterized in that the minimum of the safe ring region
2%~5% that width is the sic wafer radius length is truncated.
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| CN201811617560.6A CN109664172A (en) | 2018-12-27 | 2018-12-27 | The thining method of sic wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110434448A (en) * | 2019-08-09 | 2019-11-12 | 苏州大学 | The surface layer texturing of hard brittle material handles assistance processing method |
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| CN107564805A (en) * | 2017-06-30 | 2018-01-09 | 中国电子科技集团公司第五十五研究所 | A kind of preparation method of ultra-thin carbonization silicon |
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| CN101733557A (en) * | 2009-12-16 | 2010-06-16 | 无锡菱光科技有限公司 | Improved silicon slice laser cutting reduction process |
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| CN104078345A (en) * | 2014-06-13 | 2014-10-01 | 北京工业大学 | Thinning method for ultra-thin wafers |
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| CN110434448A (en) * | 2019-08-09 | 2019-11-12 | 苏州大学 | The surface layer texturing of hard brittle material handles assistance processing method |
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Application publication date: 20190423 |