CN109659805A - A kind of tunable laser - Google Patents
A kind of tunable laser Download PDFInfo
- Publication number
- CN109659805A CN109659805A CN201811511012.5A CN201811511012A CN109659805A CN 109659805 A CN109659805 A CN 109659805A CN 201811511012 A CN201811511012 A CN 201811511012A CN 109659805 A CN109659805 A CN 109659805A
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- Prior art keywords
- tunable laser
- photonic crystal
- optical
- gain
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1301—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of tunable laser, are related to optic communication device field.The tunable laser includes: silicon substrate, and length, width and short transverse are respectively defined as I direction, Section II direction and Section III direction；And it is formed in light input port, the first optical waveguide, photonic crystal chamber, the second optical waveguide, beam splitter, light emitting port, optical output port and gain of light component on silicon substrate；Light input port connect to form loop by optical fiber link with optical output port, and gain of light component is set on loop；The tunable laser is respectively equipped with electrode in photonic crystal chamber along the two sides in Section II direction or is equipped with electrode along the top in Section III direction in photonic crystal chamber.The adjusting of tunable laser provided by the invention is high-efficient, tuning range is big, stable output wavelength, while its structure size is small, is conducive to large-scale integrated.
Description
Technical field
The present invention relates to optic communication device fields, and in particular to a kind of tunable laser.
Background technique
On piece integrated tunable laser is due to the advantage for having the optical maser wavelength of outgoing continuously adjustable, and therefore, it has become very
Key components in more applying, especially in passive optical network (Passive Optical Network, PON).In wavelength-division
In multiplex system (Wavelength Division Multiplex, WDM), the output wavelength range of laser is bigger, and expression can
To there is more channels to be used to transmit signal, to improve the transmission rate of information.For example, single relaying bearing optical fiber reach and
The optical signal of multiple channel wavelengths from optical branch point, and branch point is by guiding the difference to and from each user
The signal of wavelength provides a kind of simple routing function.At each user location, ONT Optical Network Terminal is assigned one or more
Send and/or receive the channel wavelength of optical signal.Obviously, the biggish tunable laser of tuning range corresponds to large number of
Possible channel wavelength, therefore, corresponding to the relatively large information capacity that can be transmitted by simple optical fiber.
In the prior art, the adjustable range of tunable laser is limited, and the adjusting efficiency of device is lower.Therefore, mesh
It is preceding the problem is that being badly in need of researching and developing a kind of tunable laser Wavelength stabilized, adjustable range is big.
Summary of the invention
In view of the deficiencies in the prior art, the purpose of the present invention is to provide a kind of tunable laser, the laser
Device has many advantages, such as that Output of laser wavelength is stable, adjustable range is big, it is small to adjust high-efficient and structure size.
To achieve the above objectives, the present invention provides a kind of tunable laser comprising:
Silicon substrate, length, width and short transverse are respectively defined as I direction, Section II direction and Section III direction；With
And be formed on the silicon substrate and sequentially connected light input port, the first optical waveguide, photonic crystal chamber, the second optical waveguide with
And beam splitter；
Wherein, the beam splitter is set there are two branch, and one of branch connect with light emitting port, another branch
It is connect with optical output port；
The light input port connect to form loop by optical fiber link with the optical output port, and sets on the loop
There is gain of light component；
The tunable laser is respectively equipped with electrode along the two sides in the Section II direction in the photonic crystal chamber, or
Person is equipped with electrode along the top in the Section III direction in the photonic crystal chamber, and the method for being adjusted by heat and/or electricity is adjusted changes
Become the operation wavelength of the photonic crystal chamber.
Based on the above technical solution, the tunable laser further include be respectively arranged on the light input port and
The chip for the side that the optical output port is connect with the optical fiber link, and the light input port, first optical waveguide,
The photonic crystal chamber, second optical waveguide, the beam splitter, the light emitting port and the optical output port are equal
On the chip.
Based on the above technical solution, the photonic crystal in the photonic crystal chamber is in same mode work shape
State.
Based on the above technical solution, the light input port is selected from end coupling device and/or grating coupler, and
Its bandwidth can cover entire service band.
Based on the above technical solution, the tunable laser is in the photonic crystal chamber along the Section II direction
Two sides on be respectively provided with by the photonic crystal chamber and the electrode hang on the first air insulated slot in air and
Second air insulated slot.
Based on the above technical solution, when the electrode is respectively arranged on the photonic crystal chamber along the Section II direction
Two sides on when, the first air insulated slot and the second air insulated slot are respectively arranged on the outside of the electrode.
Based on the above technical solution, the operation wavelength adjustable range of the photonic crystal chamber can cover entire C
Wave band.
Based on the above technical solution, the beam splitter is in directional coupler, Y-branch and multimode interference
It is one or more；
The light emitting port is selected from end coupling device and/or grating coupler, and its bandwidth can cover entire work
Wave band；
The optical output port is selected from end coupling device and/or grating coupler, and its bandwidth can cover entire work
Wave band.
Based on the above technical solution, the gain of light component is selected from erbium-doped fiber amplifier and/or semiconductor light
Amplifier or the gain of light component are optical gain material；
When the gain of light component is selected from erbium-doped fiber amplifier and/or semiconductor optical amplifier, the gain of light group
Part is set on the optical fiber link；
When the gain of light component is optical gain material, the gain of light component is set on the chip.
Based on the above technical solution, the tunable laser further include light on the optical fiber link every
From device.
Compared with prior art, the beneficial effects of the present invention are:
(1) photonic crystal chamber is used in tunable laser provided by the invention, does not have the limit of Free Spectral Range
System, therefore, the wavelength tuning range of the tunable laser is very big, can cover entire C-band.
(2) adjust be emitted wavelength during, photonic crystal in tunable laser provided by the invention work always
Make in same mode, therefore, which is not in mode hopping, and Output of laser wavelength is more stable.
(3) air insulated slot is arranged in tunable laser provided by the invention around photonic crystal chamber, by photon
Crystal oscillator cavity and thermoelectricity grade are hung in air, to improve the thermal conditioning efficiency of photonic crystal resonance wavelength, are reduced and are adjusted
The power consumption of resonance wavelength；And the introducing of air insulated slot will not influence the structural stability of photonic crystal chamber.
(4) structure size of photonic crystal chamber is smaller in tunable laser provided by the invention, is more advantageous to extensive
It is integrated.
Detailed description of the invention
Fig. 1 is the top view of the tunable laser of some embodiments of the present invention；
Sectional view of the tunable laser along the section AA that Fig. 2 is Fig. 1；
Fig. 3 is the top view of the tunable laser of other embodiments of the invention；
Sectional view of the tunable laser along the section AA that Fig. 4 is Fig. 3.
In figure, identical component is used the same reference numerals to represent, and the meaning of appended drawing reference is as follows:
The first optical waveguide of 101-；The second optical waveguide of 102-；201- photonic crystal chamber；301- electrode；The first air of 401- every
From slot；402- the second air insulated slot；501- gain of light component；601- beam splitter: 701- light input port；702- light emitting
Port；703- optical output port；801- optoisolator；21- silicon substrate；22- low-refraction covering；100- optical fiber link.
Specific embodiment
To keep the present invention easier to understand, below in conjunction with drawings and the specific embodiments, the present invention will be described in detail.It should
Understand, these embodiments only serve illustrative, are not intended to limit the present invention.
As depicted in figs. 1 and 2, some embodiments of the present invention provide a kind of tunable laser comprising:
Silicon substrate 21, length, width and short transverse are respectively defined as I direction, Section II direction and Section III direction；
And it is formed on silicon substrate 21:
Light input port 701 is used for the input of light wave；
First optical waveguide 101, is used for the coupling input of the light wave from light input port 701；
Photonic crystal chamber 201 is used to select and adjust the resonance wave of the light wave through 101 coupling input of the first optical waveguide
It is long；
Second optical waveguide 102 is used for the coupling output of the light wave from photonic crystal chamber 201；
Beam splitter 601 swashs for the laser through the coupling output of the second optical waveguide 102 to be divided into the first beam according to splitting ratio
Light and the second beam laser；
Light emitting port 702 is used for the outgoing of the beam of laser from beam splitter 601；
Optical output port 703 is used for the outgoing of the second beam laser from beam splitter 601；And
Gain of light component 501 is used to the laser being emitted from optical output port 703 carrying out optical amplifier；
Light input port 701, the first optical waveguide 101, photonic crystal chamber 201, the second optical waveguide 102 and beam splitter
601 are sequentially connected with；
Beam splitter 601 is set there are two branch, and one of branch connect with light emitting port 702, another branch and
Optical output port 703 connects；
Light input port 701 connect to form loop with optical output port 703 by optical fiber link 100, and gain of light component
501 are set on loop；
Tunable laser is equipped with electrode 301 (as shown in Figure 2) along the top in Section III direction in photonic crystal chamber 201, uses
Change the operation wavelength of photonic crystal chamber 201 in the method adjusted by heat and/or electricity is adjusted.
Preferably, electrode 301 is 1 μm -5 μm at a distance from photonic crystal chamber 201 is on Section III direction.Electrode 301 and light
The distance of sub- crystal intracavity 201 closely will increase very much optical loss, adjust efficiency apart from the too far heat that can reduce.
Preferably, tunable laser further includes being respectively arranged on light input port 701 and optical output port 703 and optical fiber chain
The chip (not shown) for the side that road 100 connects, and light input port 701, the first optical waveguide 101, photonic crystal chamber
201, the second optical waveguide 102, beam splitter 601, light emitting port 702 and optical output port 703 are respectively positioned on chip.
Preferably, the photonic crystal in photonic crystal chamber 201 is in same mode state, such as basement membrane working condition or
Higher order mode working condition.
Preferably, light input port 701 be selected from end coupling device and/or grating coupler, and its bandwidth can cover it is whole
A service band.
Preferably, tunable laser is respectively provided with along the two sides in Section II direction by light in photonic crystal chamber 201
Sub- crystal intracavity 201 and electrode 301 hang on the first air insulated slot 401 and the second air insulated slot 402 in air.
Preferably, the operation wavelength adjustable range of photonic crystal chamber 201 can cover entire C-band.
Preferably, beam splitter 601 is selected from one of directional coupler, Y-branch and multimode interference or a variety of.
Preferably, the splitting ratio of beam splitter 601 is 1:9, i.e., beam of laser and the ratio of the second beam laser are 1:9.
Preferably, light emitting port 702 be selected from end coupling device and/or grating coupler, and its bandwidth can cover it is whole
A service band.
Preferably, optical output port 703 be selected from end coupling device and/or grating coupler, and its bandwidth can cover it is whole
A service band.
Preferably, gain of light component 501 is selected from erbium-doped fiber amplifier and/or semiconductor optical amplifier or the gain of light
Component 501 is optical gain material；
When gain of light component 501 is selected from erbium-doped fiber amplifier and/or semiconductor optical amplifier, gain of light component 501
On optical fiber link 100；
When gain of light component 501 is optical gain material, gain of light component 501 is set on chip.
Preferably, tunable laser further includes the optoisolator 801 on optical fiber link 100, for realizing light
The one-way transmission of wave prevents the light wave of reflection from entering gain of light component 501.
As shown in Figure 3 and Figure 4, other embodiments of the invention provide a kind of tunable laser comprising:
Silicon substrate 21, length, width and short transverse are respectively defined as I direction, Section II direction and Section III direction；
And it is formed on silicon substrate 21:
Light input port 701 is used for the input of light wave；
First optical waveguide 101, is used for the coupling input of the light wave from light input port 701；
Photonic crystal chamber 201 is used to select and adjust the resonance wave of the light wave through 101 coupling input of the first optical waveguide
It is long；
Second optical waveguide 102 is used for the coupling output of the light wave from photonic crystal chamber 201；
Beam splitter 601 swashs for the laser through the coupling output of the second optical waveguide 102 to be divided into the first beam according to splitting ratio
Light and the second beam laser；
Light emitting port 702 is used for the outgoing of the beam of laser from beam splitter 601；
Optical output port 703 is used for the outgoing of the second beam laser from beam splitter 601；And
Gain of light component 501 is used to the laser being emitted from optical output port 703 carrying out optical amplifier；
Light input port 701, the first optical waveguide 101, photonic crystal chamber 201, the second optical waveguide 102 and beam splitter
601 are sequentially connected with；
Beam splitter 601 is set there are two branch, and one of branch connect with light emitting port 702, another branch and
Optical output port 703 connects；
Light input port 701 connect to form loop with optical output port 703 by optical fiber link 100, and gain of light component
501 are set on loop；
Tunable laser is respectively equipped with electrode 301 (such as Fig. 4 institute in photonic crystal chamber 201 along the two sides in Section II direction
Show), the method for being adjusted by heat and/or electricity is adjusted changes the operation wavelength of photonic crystal chamber 201.
Preferably, electrode 301 is 1 μm -5 μm at a distance from photonic crystal chamber 201 is on Section II direction.Electrode 301 and light
The distance of sub- crystal intracavity 201 closely will increase very much optical loss, adjust efficiency apart from the too far heat that can reduce.
Preferably, tunable laser further includes being respectively arranged on light input port 701 and optical output port 703 and optical fiber chain
The chip (not shown) for the side that road 100 connects, and light input port 701, the first optical waveguide 101, photonic crystal chamber
201, the second optical waveguide 102, beam splitter 601, light emitting port 702 and optical output port 703 are respectively positioned on chip.
Preferably, the photonic crystal in photonic crystal chamber 201 is in same mode state, such as basement membrane working condition or
Higher order mode working condition.
Preferably, light input port 701 be selected from end coupling device and/or grating coupler, and its bandwidth can cover it is whole
A service band.
Preferably, tunable laser is respectively provided with along the two sides in Section II direction by light in photonic crystal chamber 201
Sub- crystal intracavity 201 and electrode 301 hang on the first air insulated slot 401 and the second air insulated slot 402 in air.
Preferably, the first air insulated slot 401 and the second air insulated slot 402 are respectively arranged on the outside of electrode 301.
Preferably, the operation wavelength adjustable range of photonic crystal chamber 201 can cover entire C-band.
Preferably, beam splitter 601 is selected from one of directional coupler, Y-branch and multimode interference or a variety of.
Preferably, the splitting ratio of beam splitter 601 is 1:9, i.e., beam of laser and the ratio of the second beam laser are 1:9.
Preferably, light emitting port 702 be selected from end coupling device and/or grating coupler, and its bandwidth can cover it is whole
A service band.
Preferably, optical output port 703 be selected from end coupling device and/or grating coupler, and its bandwidth can cover it is whole
A service band.
Preferably, gain of light component 501 is selected from erbium-doped fiber amplifier and/or semiconductor optical amplifier or the gain of light
Component 501 is optical gain material；
When gain of light component 501 is selected from erbium-doped fiber amplifier and/or semiconductor optical amplifier, gain of light component 501
On optical fiber link 100；
When gain of light component 501 is optical gain material, gain of light component 501 is set on chip.
Preferably, tunable laser further includes the optoisolator 801 on optical fiber link 100, for realizing light
The one-way transmission of wave prevents the light wave of reflection from entering gain of light component 501.
The present invention is not limited to the above-described embodiments, for those skilled in the art, is not departing from
Under the premise of the principle of the invention, several improvements and modifications can also be made, these improvements and modifications are also considered as in guarantor of the invention
Within the scope of shield.The content being not described in detail in this specification belongs to the prior art well known to professional and technical personnel in the field.
Claims (10)
1. a kind of tunable laser comprising:
Silicon substrate (21), length, width and short transverse are respectively defined as I direction, Section II direction and Section III direction；With
And it is formed on the silicon substrate (21) and sequentially connected light input port (701), the first optical waveguide (101), photonic crystal
Chamber (201), the second optical waveguide (102) and beam splitter (601)；
Wherein, the beam splitter (601) sets there are two branch, and one of branch connect with light emitting port (702), another
A branch connect with optical output port (703)；
The light input port (701) connect to form loop with the optical output port (703) by optical fiber link (100), and
The loop is equipped with gain of light component (501)；
The tunable laser is respectively equipped with electrode along the two sides in the Section II direction in the photonic crystal chamber (201)
(301), electrode (301) or in the photonic crystal chamber (201) are equipped with along the top in the Section III direction, for passing through heat
The method that tune and/or electricity are adjusted changes the operation wavelength of the photonic crystal chamber (201).
2. tunable laser according to claim 1, which is characterized in that the tunable laser further includes setting respectively
Chip in the side that the light input end (701) and the light output end (703) are connect with the optical fiber link (100), and
The light input port (701), first optical waveguide (101), the photonic crystal chamber (201), second optical waveguide
(102), the beam splitter (601), the light emitting port (702) and the optical output port (703) are respectively positioned on described
On chip.
3. tunable laser according to claim 1, which is characterized in that the photon in the photonic crystal chamber (201)
Crystal is in same mode state.
4. tunable laser according to claim 1, which is characterized in that the light input port (701) is selected from end face
Coupler and/or grating coupler, and its bandwidth can cover entire service band.
5. tunable laser according to claim 1, which is characterized in that the tunable laser is brilliant in the photon
Body cavity (201) is respectively provided with the photonic crystal chamber (201) and the electrode along the two sides in the Section II direction
(301) the first air insulated slot (401) and the second air insulated slot (402) in air are hung on.
6. tunable laser according to claim 5, which is characterized in that described in being respectively arranged on when the electrode (301)
When photonic crystal chamber (201) is along the two sides in the Section II direction, the first air insulated slot (401) and second air
Isolation channel (402) is respectively arranged on the outside of the electrode (301).
7. tunable laser according to claim 1, which is characterized in that the operating wave of the photonic crystal chamber (201)
Long adjustable range can cover entire C-band.
8. tunable laser according to claim 1, which is characterized in that the beam splitter (601) is selected from orientation coupling
One of clutch, Y-branch and multimode interference are a variety of；
The light emitting port (702) is selected from end coupling device and/or grating coupler, and its bandwidth can cover entire work
Wave band；
The optical output port (703) is selected from end coupling device and/or grating coupler, and its bandwidth can cover entire work
Wave band.
9. tunable laser according to claim 1, which is characterized in that the gain of light component (501) is selected from er-doped
Fiber amplifier and/or semiconductor optical amplifier or the gain of light component (501) are optical gain material；
When the gain of light component (501) is selected from erbium-doped fiber amplifier and/or semiconductor optical amplifier, the gain of light group
Part (501) is set on the optical fiber link (100)；
When the gain of light component (501) is optical gain material, the gain of light component (501) is set on the chip.
10. tunable laser according to claim 1, which is characterized in that the tunable laser further includes being set to
Optoisolator (801) on the optical fiber link (100).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811511012.5A CN109659805B (en) | 2018-12-11 | 2018-12-11 | Tunable laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811511012.5A CN109659805B (en) | 2018-12-11 | 2018-12-11 | Tunable laser |
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| Publication Number | Publication Date |
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| CN109659805A true CN109659805A (en) | 2019-04-19 |
| CN109659805B CN109659805B (en) | 2020-02-11 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664679A (en) * | 2012-04-10 | 2012-09-12 | 长春理工大学 | Arrayed photoelectric detector in wireless laser communication device |
| CN203941311U (en) * | 2014-06-06 | 2014-11-12 | 华中科技大学 | A kind of adjustable optical resonance device |
| US9377399B2 (en) * | 2008-03-18 | 2016-06-28 | Lawrence Livermore National Security, Llc | Resonant optical transducers for in-situ gas detection |
| CN205609949U (en) * | 2016-03-14 | 2016-09-28 | 中国科学院西安光学精密机械研究所 | Adjustable frequency spaced optical frequency comb generation system based on encircle resonant cavity a little |
| CN206250570U (en) * | 2016-11-09 | 2017-06-13 | 西南大学 | A kind of optical chaos generation device based on silicon photon microcavity |
-
2018
- 2018-12-11 CN CN201811511012.5A patent/CN109659805B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9377399B2 (en) * | 2008-03-18 | 2016-06-28 | Lawrence Livermore National Security, Llc | Resonant optical transducers for in-situ gas detection |
| CN102664679A (en) * | 2012-04-10 | 2012-09-12 | 长春理工大学 | Arrayed photoelectric detector in wireless laser communication device |
| CN203941311U (en) * | 2014-06-06 | 2014-11-12 | 华中科技大学 | A kind of adjustable optical resonance device |
| CN205609949U (en) * | 2016-03-14 | 2016-09-28 | 中国科学院西安光学精密机械研究所 | Adjustable frequency spaced optical frequency comb generation system based on encircle resonant cavity a little |
| CN206250570U (en) * | 2016-11-09 | 2017-06-13 | 西南大学 | A kind of optical chaos generation device based on silicon photon microcavity |
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|---|---|
| CN109659805B (en) | 2020-02-11 |
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