CN109638647A - A kind of fiber embedded disk lasers part - Google Patents
A kind of fiber embedded disk lasers part Download PDFInfo
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- CN109638647A CN109638647A CN201811580248.4A CN201811580248A CN109638647A CN 109638647 A CN109638647 A CN 109638647A CN 201811580248 A CN201811580248 A CN 201811580248A CN 109638647 A CN109638647 A CN 109638647A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- Semiconductor Lasers (AREA)
Abstract
It include substrate, the defect inhibition layer being formed on the substrate, the buffer layer being formed in the defect inhibition layer, the sacrificial layer being formed on the buffer layer and the active area being formed on the sacrificial layer the invention discloses a fiber embedded disk lasers part；The diameter of the fiber embedded disk lasers part is 0.5~10um.Fiber embedded disk lasers part of the invention includes substrate, defect inhibition layer formed on substrate, the buffer layer being formed in defect inhibition layer, the sacrificial layer being formed on buffer layer and the active area being formed on sacrificial layer；The diameter of fiber embedded disk lasers part is 0.5~10um；Not only size is small, can be advantageously applied to the silicon substrate optical chip of large area and High Density Integration, and the fiber embedded disk lasers part has excellent luminous intensity and threshold value.
Description
Technical field
The present invention relates to optical communication technology fields, in particular to a kind of fiber embedded disk lasers part.
Background technique
Silicon photon technology is a kind of optical communication technology based on silicon.However since silicon itself belongs to a kind of nothing of indirect band gap
The inorganic semiconductor material of machine semiconductor material, the relatively direct band gap of luminescent properties is far short of what is expected.Therefore, silicon substrate optical chip is usual
Need a kind of inorganic semiconductor laser device of coupled outside as light source needed for optical communication, such as waveguide type (FP) laser device,
Distributed Feedback (DFB) laser device and vertical cavity surface (VCSEL) emitting laser part.However, this mode will increase laser
The coupling cost of device and silicon chip, moreover, waveguide type (FP) laser device, distributed Feedback (DFB) laser device and vertical cavity
The size of face (VCSEL) emitting laser part is larger, is unfavorable for being suitable for the silicon substrate optical chip of large area and High Density Integration.
Summary of the invention
In view of this, a kind of fiber embedded disk lasers part provided by the invention, preferably overcome that the above-mentioned prior art is objective to deposit
The problem of and defect, the fiber embedded disk lasers part include substrate, defect inhibition layer formed on substrate, be formed in defect inhibition
Buffer layer, the sacrificial layer being formed on buffer layer on layer and the active area being formed on sacrificial layer；Fiber embedded disk lasers part it is straight
Diameter is 0.5~10um；Not only size is small, can be advantageously applied to the silicon substrate optical chip of large area and High Density Integration, and should
Fiber embedded disk lasers part has excellent luminescent properties and threshold value.
A kind of fiber embedded disk lasers part including substrate, the defect inhibition layer being formed on the substrate, is formed in the defect
Buffer layer, the sacrificial layer being formed on the buffer layer in inhibition layer and the active area being formed on the sacrificial layer；
The diameter of the fiber embedded disk lasers part is 0.5~10um.
In certain embodiment, the substrate uses silicon substrate；The substrate with a thickness of 0.7~1.2um.
In certain embodiment, the material of the defect inhibition layer is InGaAs/GaAs superlattices；The defect inhibits
Layer with a thickness of 3~4um.
In certain embodiment, the material of the buffer layer is GaAs；The buffer layer with a thickness of 2.2~3um.
In certain embodiment, the material of the sacrificial layer is AlxGa1-xAs, wherein x is 0.6~0.9；The sacrifice
Layer with a thickness of 1.3~2um.
In certain embodiment, the active area includes 3 layers or 4 layers of active layer；The active area with a thickness of 350~
380nm。
In certain embodiment, the active layer includes In0.15Ga0.85As Quantum Well and is limited in
InAs quantum dot in In0.15Ga0.85As Quantum Well.
In certain embodiment, the fiber embedded disk lasers part further includes the cap rock being formed on the active area.
In certain embodiment, the cap rock includes the first cover being formed on the active area and is formed in described
The second cap rock on first cover, the material of the first cover are Al0.4GaAs, and the material of second cap rock is GaAs.
In certain embodiment, the first cover with a thickness of 100~150nm；Second cap rock with a thickness of 8
~12nm.
Compared with prior art, a kind of beneficial effect of fiber embedded disk lasers part of the invention is:
Fiber embedded disk lasers part of the invention includes substrate, defect inhibition layer formed on substrate, is formed in defect inhibition
Buffer layer, the sacrificial layer being formed on buffer layer on layer and the active area being formed on sacrificial layer；Fiber embedded disk lasers part it is straight
Diameter is 0.5~10um；Not only size is small, can be advantageously applied to the silicon substrate optical chip of large area and High Density Integration, and should
Fiber embedded disk lasers part has excellent luminous intensity and threshold value.
In conclusion the present invention has the advantages that above-mentioned many and practical value, and there are no in similar product similar
Method publish or use and really belong to innovation, produce handy and practical effect, more existing technology, which has, promotes
Multinomial effect, thus more suitable for practical, and there is extensive industrial value.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, makees detailed
It is described as follows.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is a kind of cross section structure schematic diagram of fiber embedded disk lasers part of the invention.
Drawing reference numeral explanation:
1 fiber embedded disk lasers part
100 substrates
200 defect inhibition layers
300 buffer layers
400 sacrificial layers
500 active areas
600 first covers
700 second cap rocks
Specific embodiment
To facilitate the understanding of the present invention, fiber embedded disk lasers part is described more fully below with reference to relevant drawings.
The embodiment of fiber embedded disk lasers part is given in attached drawing.But fiber embedded disk lasers part can be realized in many different forms,
It is not limited to the examples described herein.On the contrary, purpose of providing these embodiments is makes public affairs to fiber embedded disk lasers part
It is more thorough and comprehensive to open content.
Hereinafter, various embodiments of the present invention will be described more fully.The present invention can have various embodiments, and
It can adjust and change wherein.It should be understood, however, that: there is no various embodiments of the present invention are limited to spy disclosed herein
Determine the intention of embodiment, but should invention is construed as cover in the spirit and scope for falling into various embodiments of the present invention
All adjustment, equivalent and/or optinal plan.
Hereinafter, disclosed in the term " includes " that can be used in various embodiments of the present invention or " may include " instruction
Function, operation or the presence of element, and do not limit the increase of one or more functions, operation or element.In addition, such as existing
Used in various embodiments of the present invention, term " includes ", " having " and its cognate are meant only to indicate special characteristic, number
Word, step, operation, the combination of element, component or aforementioned item, and be understood not to exclude first one or more other
Feature, number, step, operation, element, component or aforementioned item combined presence or increase one or more features, number,
Step, operation, element, component or aforementioned item combination a possibility that.
In various embodiments of the present invention, statement " A or/and B " includes any combination or the institute of the text listed file names with
There is combination, such as, it may include A, it may include B or may include A and B both.
The statement (" first ", " second " etc.) used in various embodiments of the present invention can be modified in various implementations
Various constituent element in example, but respective sets can not be limited into element.For example, the above statement is not intended to limit the suitable of the element
Sequence and/or importance.The above statement is only used for the purpose for differentiating an element and other elements.For example, the first user fills
It sets and indicates different user device with second user device, although the two is all user apparatus.For example, of the invention each not departing from
In the case where the range of kind embodiment, first element is referred to alternatively as second element, and similarly, second element is also referred to as first
Element.
It should also be noted that in the present invention, unless otherwise specific regulation and definition, the arts such as " installation ", " connection ", " fixation "
Language shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection or being integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be and be directly connected to, and can be indirectly connected through an intermediary；It can be two
Connection inside element.For the ordinary skill in the art, above-mentioned term can be understood at this as the case may be
Concrete meaning in invention.
In the present invention, those skilled in the art are it is to be appreciated that indicating position or positional relationship in text
Term be orientation based on the figure or positional relationship, be merely for convenience of description of the present invention and simplification of the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore
It is not considered as limiting the invention.
The term used in various embodiments of the present invention is used only for the purpose of describing specific embodiments and not anticipates
In limitation various embodiments of the present invention.Unless otherwise defined, otherwise all terms used herein (including technical term and
Scientific term) there is contain identical with the normally understood meaning of various embodiments of the present invention one skilled in the art
Justice.The term (term such as limited in the dictionary generally used) be to be interpreted as have in the related technical field
The identical meaning of situational meaning and Utopian meaning or meaning too formal will be interpreted as having, unless this
It is clearly defined in the various embodiments of invention.
Referring to Fig. 1, the present invention provides a kind of fiber embedded disk lasers part 1, including substrate 100, it is formed in the substrate 100
On defect inhibition layer 200, be formed in the defect inhibition layer 200 buffer layer 300, be formed on the buffer layer 300
Sacrificial layer 400 and the active area 500 that is formed on the sacrificial layer 400.
The diameter of the fiber embedded disk lasers part 1 be 0.5~10um such as 0.5um, 1um, 2um, 3um, 4um, 5um, 6um,
7um, 8um, 9um or 10um etc..
Preferably, in the embodiment of the present invention, the substrate 100 uses silicon substrate 100.
Preferably, the substrate 100 with a thickness of 0.7~1.2um such as 0.7um, 0.8um, 0.9um, 1.0um, 1.1um or
1.2um waiting.
Preferably, in the embodiment of the present invention, the defect inhibition layer 200 includes InGaAs/GaAs superlattices；The defect
Inhibition layer 200 with a thickness of 3~4um such as 3um, 3.2um, 3.5um, 3.8um or 4um etc..
It should be noted that defect inhibition layer 200 is for inhibiting the various dislocation defects due to caused by lattice mismatch, it is this
Various dislocation defects caused by lattice mismatch can extend upwardly to the depth of tens microns from Si substrate 100, can seriously reduce
The luminescent properties etc. of laser device；When defect inhibition layer 200 uses InGaAs/GaAs superlattices, defect reaches InGaAs/GaAs
The position of superlattices becomes and is laterally extended, inhibit defect to upwardly extend, the performance of improving laser device just by longitudinally extending.
Preferably, in the embodiment of the present invention, the material of the buffer layer 300 is GaAs.
Preferably, the buffer layer 300 with a thickness of 2.2~3um such as 2.2um, 2.3um, 2.4um, 2.5um, 2.6um,
2.7um, 2.8um, 2.9um or 3um etc..
It should be noted that by setting buffer layer 300 for further decreasing the various positions due to caused by lattice mismatch
Wrong defect, the performance of improving laser device.
Preferably, in the embodiment of the present invention, the material of the sacrificial layer 400 is AlxGa1-xAs (aluminum gallium arsenide), wherein x is
0.6~0.9 such as 0.6,0.7,0.8 or 0.9.I.e. the material of sacrificial layer 400 can be Al0.6Ga0.4As、Al0.7Ga0.3As、
Al0.8Ga0.2As or Al0.9Ga0.1As。
It should be noted that above-mentioned x and 1-x respectively indicate AlxGa1-xThe atom accounting of Al and gallium in As (aluminum gallium arsenide)
Atom accounting.
Preferably, the sacrificial layer 400 with a thickness of 1.3~2um such as 1.3um, 1.4um, 1.5um, 1.6um, 1.7um,
1.8um, 1.9um or 2um etc..
Preferably, in the embodiment of the present invention, the active area 500 includes 3 layers or 4 layers of active layer；The active area 500
With a thickness of 350~380nm such as 350nm, 355nm, 358nm, 362nm, 365nm, 368nm, 372nm, 376nm or 380nm etc..
Preferably, in the embodiment of the present invention, the active layer includes In0.15Ga0.85It As (indium gallium arsenic) Quantum Well and is limited in
In0.15Ga0.85InAs quantum dot in As (indium gallium arsenic) Quantum Well.
Above-mentioned In0.15Ga0.85The atomic percent that the atomic percent of In is 15%, Ga in As (indium gallium arsenic) is 85%.
It should be noted that the present invention is not intended to limit the number of plies of active layer in active area 500, active area 500 can be 1 layer
Active layer, 2 layers of active layer, 5 layers of active layer or 6 layers of active layer etc..When active area 500 includes 3 layers or 4 layers of active layer, obtain
Laser device luminous intensity and threshold value be above active area 500 can for 1 layer of active layer, 2 layers of active layer, 5 layers it is active
The luminous intensity and threshold value of the laser device obtained when layer or 6 layers of active layer.
Preferably, in the embodiment of the present invention, the fiber embedded disk lasers part 1 further includes being formed on the active area 500
Cap rock.
Preferably, in the embodiment of the present invention, the cap rock includes the first cover 600 being formed on the active area 500
With the second cap rock 700 being formed on the first cover 600, the material of the first cover 600 is Al0.4Ga0.6As, it is described
The material of second cap rock 700 is GaAs.
Preferably, the first cover 600 with a thickness of 100~150nm such as 100nm, 110nm, 120nm, 130nm,
140nm or 150nm etc..
Second cap rock 700 with a thickness of 8~12nm such as 8nm, 8.5nm, 9nm, 9.5nm, 10nm, 10.5nm, 11nm,
11.5nm or 12nm etc..
It should be noted that first layer cap rock 600 is to provide more preferable quantum dot restriction effect.And it is individual
Al0.4Ga0.6As is easy to oxidize as first layer cap rock 600, falls off, therefore by first layer cap rock 600 plus one layer the
Two cap rocks 700 can be effectively prevented first layer cap rock 600 and aoxidize.
The present invention also provides a kind of processing technologys of fiber embedded disk lasers part 1, comprising the following steps:
(1) using molecular beam epitaxy to grow a layer thickness in 100 crystal face of silicon substrate is 3~4um comprising InGaAs/
The defect inhibition layer 200 of GaAs superlattices；
(2) molecular beam epitaxy is used to grow a layer thickness in drawbacks described above inhibition layer 200 for the GaAs of 2.2~3um
Buffer layer 300；
(3) molecular beam epitaxy is used to grow a layer thickness on above-mentioned buffer layer 300 for the Al of 1.3~2umxGa1-xAs
Sacrificial layer 400, wherein x is 0.6~0.9；
(4) active area that at least one layer of active layer is formed is grown on above-mentioned sacrificial layer 400 using molecular beam epitaxy
500, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85In As (indium gallium arsenic) Quantum Well
InAs quantum dot, active area 500 with a thickness of 350~380nm；
(5) molecular beam epitaxy is used to grow a layer thickness on above-mentioned active area 500 for 100~150nm's
Al0.4Ga0.6As layers, then in Al0.4Ga0.6The GaAs layer that a layer thickness is 8~12nm is grown on As layer；
(6) electron-beam direct writing is used, reactive ion beam etching (RIBE) or wet etching prepare the dish-type that diameter is 0.5~10um and swash
Light device.
Above-mentioned molecular beam epitaxy (MBE) is a kind of physical deposition monocrystal thin films method, intracavitary in ultrahigh vacuum, and source material is logical
The methods of high temperature evaporation, glow discharge ionization, gas cracking or beamlet heating evaporation are crossed, molecular beam is generated.Incident molecule
After beam and 100 positive energy exchange of substrate, form a film through adsorption, migration, nucleation, growth.Growing system is matched there are many monitoring device,
Transient measurement analysis can be carried out to 100 temperature of substrate, the speed of growth and film thickness etc. in growth course, to concave-convex surface, fluctuating, original
The growth details such as sub- coverage, sticking coefficient, evaporation coefficient and diffusion into the surface distance are accurately monitored.Due to molecular beam epitaxy
Growing environment it is clean, temperature is low, has good accurate real-time monitoring system in situ, crystal perfection, component and thickness uniform
It accurately, is good optoelectronic film, Semiconductor Film Growth tool.
Fiber embedded disk lasers part 1 of the invention includes substrate 100, the defect inhibition layer 200 being formed on substrate 100, is formed
In in defect inhibition layer 200 buffer layer 300, the sacrificial layer 400 that is formed on buffer layer 300 and be formed on sacrificial layer 400
Active area 500；The diameter of fiber embedded disk lasers part 1 is 0.5~10um；Not only size is small, can be advantageously applied to large area
And the silicon substrate optical chip of High Density Integration, and the fiber embedded disk lasers part 1 has excellent luminous intensity and threshold value.
Embodiment 1
A kind of fiber embedded disk lasers part, including silicon substrate, be formed on silicon substrate comprising InGaAs/GaAs superlattices defect
Inhibition layer, the GaAs buffer layer being formed in the defect inhibition layer, the Al being formed on the GaAs buffer layer0.6Ga0.4As sacrifices
Layer is formed in the Al0.6Ga0.4One layer of active layer on As sacrificial layer, the Al being formed on three layers of active layer0.4Ga0.6As layers and
It is formed in Al0.4Ga0.6As layer by layer on GaAs layer.
Above-mentioned, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85As (indium gallium arsenic)
InAs quantum dot in Quantum Well.
Above-mentioned silicon substrate with a thickness of 0.7um, defect inhibition layer with a thickness of 3um, GaAs buffer layer with a thickness of
2.2um, AlxGa1-xAs sacrificial layer with a thickness of 1.3um, one layer of active layer with a thickness of 350nm, Al0.4Ga0.6As layers of thickness
For 100nm, GaAs layers with a thickness of 8nm.
Embodiment 1
A kind of fiber embedded disk lasers part, including silicon substrate, be formed on silicon substrate comprising InGaAs/GaAs superlattices defect
Inhibition layer, the GaAs buffer layer being formed in the defect inhibition layer, the Al being formed on the GaAs buffer layer0.6Ga0.4As sacrifices
Layer is formed in the Al0.6Ga0.4One layer of active layer on As sacrificial layer, the Al being formed on three layers of active layer0.4Ga0.6As layers and
It is formed in Al0.4Ga0.6As layer by layer on GaAs layer.
Above-mentioned, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85As (indium gallium arsenic)
InAs quantum dot in Quantum Well.
Above-mentioned silicon substrate with a thickness of 0.7um, defect inhibition layer with a thickness of 3um, GaAs buffer layer with a thickness of
2.2um, AlxGa1-xAs sacrificial layer with a thickness of 1.3um, one layer of active layer with a thickness of 350nm, Al0.4Ga0.6As layers of thickness
For 100nm, GaAs layers with a thickness of 8nm.
The diameter of the fiber embedded disk lasers part is 1um.
Embodiment 2
A kind of fiber embedded disk lasers part, including silicon substrate, be formed on silicon substrate comprising InGaAs/GaAs superlattices defect
Inhibition layer, the GaAs buffer layer being formed in the defect inhibition layer, the Al being formed on the GaAs buffer layer0.6Ga0.4As sacrifices
Layer is formed in the Al0.6Ga0.4Two layers of active layer on As sacrificial layer, the Al being formed on three layers of active layer0.4Ga0.6As layers and
It is formed in Al0.4Ga0.6As layer by layer on GaAs layer.
Above-mentioned, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85As (indium gallium arsenic)
InAs quantum dot in Quantum Well.
Above-mentioned silicon substrate with a thickness of 0.8um, defect inhibition layer with a thickness of 3.2um, GaAs buffer layer with a thickness of
2.4um, AlxGa1-xAs sacrificial layer with a thickness of 1.5um, two layers active layer with a thickness of 355nm, Al0.4Ga0.6As layers of thickness
For 110nm, GaAs layers with a thickness of 9nm.
The diameter of the fiber embedded disk lasers part is 3um.
Embodiment 3
A kind of fiber embedded disk lasers part, including silicon substrate, be formed on silicon substrate comprising InGaAs/GaAs superlattices defect
Inhibition layer, the GaAs buffer layer being formed in the defect inhibition layer, the Al being formed on the GaAs buffer layer0.6Ga0.4As sacrifices
Layer is formed in the Al0.6Ga0.4Three layers of active layer on As sacrificial layer, the Al being formed on three layers of active layer0.4Ga0.6As layers and
It is formed in Al0.4Ga0.6As layer by layer on GaAs layer.
Above-mentioned, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85As (indium gallium arsenic)
InAs quantum dot in Quantum Well.
Above-mentioned silicon substrate with a thickness of 0.9um, defect inhibition layer with a thickness of 3.5um, GaAs buffer layer with a thickness of
2.5um, AlxGa1-xAs sacrificial layer with a thickness of 1.6um, three layers of active layer with a thickness of 362nm, Al0.4Ga0.6As layers of thickness
For 120nm, GaAs layers with a thickness of 10nm.
The diameter of the fiber embedded disk lasers part is 5um.
Embodiment 4
A kind of fiber embedded disk lasers part, including silicon substrate, be formed on silicon substrate comprising InGaAs/GaAs superlattices defect
Inhibition layer, the GaAs buffer layer being formed in the defect inhibition layer, the Al being formed on the GaAs buffer layer0.6Ga0.4As sacrifices
Layer is formed in the Al0.6Ga0.4Four layers of active layer on As sacrificial layer, the Al being formed on three layers of active layer0.4Ga0.6As layers and
It is formed in Al0.4Ga0.6As layer by layer on GaAs layer.
Above-mentioned, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85As (indium gallium arsenic)
InAs quantum dot in Quantum Well.
Above-mentioned silicon substrate with a thickness of 1um, defect inhibition layer with a thickness of 3.8um, GaAs buffer layer with a thickness of
2.8um, AlxGa1-xAs sacrificial layer with a thickness of 1.8um, four layers of active layer with a thickness of 368nm, Al0.4Ga0.6As layers of thickness
For 130nm, GaAs layers with a thickness of 11nm.
The diameter of the fiber embedded disk lasers part is 8um.
Embodiment 5
A kind of fiber embedded disk lasers part, including silicon substrate, be formed on silicon substrate comprising InGaAs/GaAs superlattices defect
Inhibition layer, the GaAs buffer layer being formed in the defect inhibition layer, the Al being formed on the GaAs buffer layer0.6Ga0.4As sacrifices
Layer is formed in the Al0.6Ga0.4Five layers of active layer on As sacrificial layer, the Al being formed on three layers of active layer0.4Ga0.6As layers and
It is formed in Al0.4Ga0.6As layer by layer on GaAs layer.
Above-mentioned, active layer includes In0.15Ga0.85As (indium gallium arsenic) Quantum Well and it is limited in In0.15Ga0.85As (indium gallium arsenic)
InAs quantum dot in Quantum Well.
Above-mentioned silicon substrate with a thickness of 1.2um, defect inhibition layer with a thickness of 4um, GaAs buffer layer with a thickness of 3um,
AlxGa1-xAs sacrificial layer with a thickness of 2um, five layers of active layer with a thickness of 380nm, Al0.4Ga0.6As layers with a thickness of 150nm,
GaAs layers with a thickness of 12nm.
The diameter of the fiber embedded disk lasers part is 10um.
The luminous intensity and threshold value of the fiber embedded disk lasers part of above-described embodiment 1~5 are tested, find 3 He of embodiment
Hair of the luminous intensity and threshold value of the fiber embedded disk lasers part of embodiment 4 compared with the fiber embedded disk lasers part of Examples 1 to 2 and embodiment 5
Luminous intensity and threshold value are higher.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.
Claims (10)
1. a kind of fiber embedded disk lasers part, it is characterised in that: including substrate, the defect inhibition layer being formed on the substrate, formed
In in the defect inhibition layer buffer layer, the sacrificial layer that is formed on the buffer layer and be formed in having on the sacrificial layer
Source region；
The diameter of the fiber embedded disk lasers part is 0.5~10um.
2. fiber embedded disk lasers part according to claim 1, it is characterised in that: the substrate uses silicon substrate；The substrate
With a thickness of 0.7~1.2um.
3. fiber embedded disk lasers part according to claim 1, it is characterised in that: the material of the defect inhibition layer is
InGaAs/GaAs superlattices；The defect inhibition layer with a thickness of 3~4um.
4. fiber embedded disk lasers part according to claim 1, it is characterised in that: the material of the buffer layer is GaAs；It is described
Buffer layer with a thickness of 2.2~3um.
5. fiber embedded disk lasers part according to claim 1, it is characterised in that: the material of the sacrificial layer is AlxGa1-xAs,
Wherein x is 0.6~0.9；The sacrificial layer with a thickness of 1.3~2um.
6. fiber embedded disk lasers part according to claim 1, it is characterised in that: the active area includes 3 layers or 4 layers active
Layer；The active area with a thickness of 350~380nm.
7. fiber embedded disk lasers part according to claim 6, it is characterised in that: the active layer includes In0.15Ga0.85As
Quantum Well and the InAs quantum dot being limited in In0.15Ga0.85As Quantum Well.
8. fiber embedded disk lasers part according to claim 1, it is characterised in that: the fiber embedded disk lasers part further includes being formed in
Cap rock on the active area.
9. fiber embedded disk lasers part according to claim 8, it is characterised in that: the cap rock includes being formed in the active area
On first cover and the second cap rock for being formed on the first cover, the material of the first cover be Al0.4GaAs, institute
The material for stating the second cap rock is GaAs.
10. fiber embedded disk lasers part according to claim 9, it is characterised in that: the first cover with a thickness of 100~
150nm；Second cap rock with a thickness of 8~12nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811580248.4A CN109638647B (en) | 2018-12-24 | 2018-12-24 | Disc type laser device |
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| CN201811580248.4A CN109638647B (en) | 2018-12-24 | 2018-12-24 | Disc type laser device |
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| CN109638647A true CN109638647A (en) | 2019-04-16 |
| CN109638647B CN109638647B (en) | 2020-05-05 |
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| CN201811580248.4A Active CN109638647B (en) | 2018-12-24 | 2018-12-24 | Disc type laser device |
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| JPH09260786A (en) * | 1996-03-22 | 1997-10-03 | Hitachi Ltd | Semiconductor light emitting element and its manufacture |
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| JPH09260786A (en) * | 1996-03-22 | 1997-10-03 | Hitachi Ltd | Semiconductor light emitting element and its manufacture |
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| CN116111449A (en) * | 2023-04-11 | 2023-05-12 | 湖南汇思光电科技有限公司 | Optical pumping one-dimensional photonic crystal micro-nano laser and preparation method thereof |
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