CN109638113A - A kind of preparation method of the infrared focal plane array based on reading circuit - Google Patents
A kind of preparation method of the infrared focal plane array based on reading circuit Download PDFInfo
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- CN109638113A CN109638113A CN201910033134.6A CN201910033134A CN109638113A CN 109638113 A CN109638113 A CN 109638113A CN 201910033134 A CN201910033134 A CN 201910033134A CN 109638113 A CN109638113 A CN 109638113A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000001548 drop coating Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000013065 commercial product Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 7
- 238000003672 processing method Methods 0.000 description 3
- 238000001931 thermography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 description 2
- 229960005265 selenium sulfide Drugs 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation methods of infrared focal plane array based on reading circuit, comprising: cleaning reading circuit surface, pixel deposition electrode layer prepare photosensitive material layer, pixelation processing photosensitive material layer, deposition passivation protection layer, deposition common electrode layer.Photosensitive material and reading circuit direct-coupling are enormously simplified processing flow by the preparation method of infrared focal plane array of the invention, reduce manufacturing cost.
Description
Technical field
The present invention relates to photoelectric sensor technology field more particularly to a kind of infrared focal plane arrays based on reading circuit
Preparation method.
Background technique
Infrared thermal imaging technique, which has, to be extremely widely applied.It is partly led currently, infrared thermal imager depends on narrowband
Body material and bolometer two ways.Narrow-band semiconductor material (such as mercury cadmium tellurium alloy (HgCdTe), indium antimonide (InSb)
Deng) there is high sensitivity and reaction speed under liquid nitrogen temperature.Compared to narrow-band semiconductor, based on the infrared of bolometer
Imager relies primarily on the heated change resistance of temperature-sensitive element to detect, and response speed is slow (20 milliseconds to 200 milliseconds), Wu Faying
For high speed imaging scene, application is significantly limited.
However, narrow-band semiconductor and hot radiation measurement infrared thermal imager rely on complicated, expensive material preparation and processing
Method.By taking narrow-band semiconductor material as an example, synthesis is heavy dependent on complexity, Gao Chengben, the physical deposition methods of low output or chemistry
Area method, such as molecular beam epitaxial growth and gas phase synthesis method.Infrared focal plane array and reading electricity based on narrow-band semiconductor material
The integration on road (ROIC) needs to bind by indium column, resin filling, substrate is thinned and the processes such as heat buffering substrate binding.Complicated
Processing flow leads to that production efficiency is low, preparation cost is high.Currently, monolithic narrow-band semiconductor infrared thermal imaging element cost is 3000
U.S. dollar or so.Therefore, directly infrared material is coupled with reading circuit, cost can be substantially reduced.However, traditional
The processing method of narrow-band semiconductor limits the possibility directly coupled with reading circuit.New infrared material and new processing
Method becomes the key for realizing reading circuit coupling.Based on new photosensitive material, to be provided with the direct-coupling of reading circuit
Possible technology path.
Summary of the invention
Object of the present invention is to overcome the deficiencies of the prior art and provide a kind of infrared focal plane array based on reading circuit
Preparation method.
The present invention solves technical problem and adopts the following technical scheme that
A kind of preparation method of the infrared focal plane array based on reading circuit, comprising the following steps:
S1: cleaning reading circuit surface, the reading circuit are the commercial product of market purchase；
S2: pixel deposition electrode layer is made of electron beam deposition certain material, is deposited so that the pixel electrode layer does not connect
The continuous entire reading circuit surface of covering, it is characterized in that discontinuously, separate independent electrode, be divided into 1 micron to 5 microns；
S3: preparing photosensitive material layer, is prepared on substrate using spin coating or drop coating mode, continuously covers entire substrate table
Face, and it is with a thickness of between 100 nanometers to 800 nanometers；
S4: pixelation handles photosensitive material layer, pixelation processing is carried out by photoetching and chemical corrosion method, so that described
Photosensitive material layer becomes discontinuous, separates independent film, is divided into 1 micron to 5 microns；
S5: deposition passivation protection layer is deposited by photoetching and electron beam deposition or is spun on photosensitive material layer surface, discontinuously
Photosensitive material layer is covered, in photosensitive material layer surface there are 5 microns to 100 microns openings, material selection silica and its more
Kind polymer；
S6: deposition common electrode layer covers whole surface, institute using with a thickness of the metal between 1 nanometer to 300 nanometers
The metal stated includes gold, silver, copper, nickel.
As a preference, the pixel electrode layer is made of the metal of electron beam deposition, the metal include gold,
Silver, copper, nickel；Metal layer with a thickness of 30 nanometers to 300 nanometers.
As another preferred embodiment, the pixel electrode layer is made of the conductive oxide of electron beam deposition, the conduction
Compound includes indium tin oxide target；Conductive oxide layer with a thickness of 10 nanometers to 200 nanometers.
The invention has the following beneficial effects: the present invention by by liquid phase synthesis, volume is controllable, the adjustable sulphur of absorption bands
Mercury race Colloidal Quantum Dots or selenium sulfide and reading circuit carry out direct-coupling, propose a kind of focal plane arrays (FPA) based on reading circuit
Preparation method reduces production cost, realizes the thermal imaging of high sensitivity, high-resolution, low cost.Meanwhile using colloid
Quantum dot or selenium sulfide can be prepared as photosensitive layer by liquid-phase chemical reaction, with spy at low cost, yield is high
In addition point directly spin coating or drop coating can greatly reduce material processing cost, enormously simplify processing stream in various reading circuits
Journey reduces manufacturing cost.
Detailed description of the invention
Fig. 1 is that the present invention is based on the preparation method flow diagrams of the infrared focal plane array of reading circuit；
Fig. 2 is that the present invention is based on the infrared focal plane array structure charts of reading circuit；
Specific embodiment
Technical solution of the present invention is further elaborated below with reference to embodiment and attached drawing.
Specific embodiment 1: as described in Figure 1, present embodiment is a kind of infrared focal plane array based on reading circuit
Preparation method, comprising the following steps:
S1: cleaning reading circuit surface, the reading circuit are the commercial product of market purchase；
S2: pixel deposition electrode layer is made of electron beam deposition certain material, is deposited so that the pixel electrode layer does not connect
The continuous entire reading circuit surface of covering, it is characterized in that discontinuously, separate independent electrode, be divided into 1 micron to 5 microns；
S3: preparing photosensitive material layer, is prepared on substrate using spin coating or drop coating mode, continuously covers entire substrate table
Face, and it is with a thickness of between 100 nanometers to 800 nanometers；
S4: pixelation handles photosensitive material layer, pixelation processing is carried out by photoetching and chemical corrosion method, so that described
Photosensitive material layer becomes discontinuous, separates independent film, is divided into 1 micron to 5 microns；
S5: deposition passivation protection layer is deposited by photoetching and electron beam deposition or is spun on photosensitive material layer surface, discontinuously
Photosensitive material layer is covered, in photosensitive material layer surface there are 5 microns to 100 microns openings, material selection silica and its more
Kind polymer；
S6: deposition common electrode layer covers whole surface, institute using with a thickness of the metal between 1 nanometer to 300 nanometers
The metal stated includes gold, silver, copper, nickel.
Specific embodiment 2: present embodiment is a kind of restriction of specific embodiment one, the pixel electrode layer is adopted
It is constituted with metal, the metal includes gold, silver, copper, nickel；Metal layer with a thickness of 30 nanometers to 300 nanometers.
Specific embodiment 3: present embodiment is that the another of specific embodiment one limits, the pixel electricity
Pole layer is made of the conductive oxide of electron beam deposition, and the conductive compound includes indium tin oxide target；Conductive oxide layer
With a thickness of 10 nanometers to 200 nanometers.
The infrared focal plane array based on reading circuit prepared according to specific embodiment is as shown in Fig. 2, include
Following part: common electrode layer 1, photosensitive material layer 2, pixel electrode layer 3,4 refer to passivation protection layers in Fig. 2, and 5 refer to reading circuits, 6
For incident infrared direction.
Finally, it should be noted that embodiment of above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
Invention is explained in detail referring to aforementioned embodiments for pipe, those skilled in the art should understand that: its according to
It can so modify to technical solution documented by aforementioned embodiments, or part of technical characteristic is equally replaced
It changes；And these are modified or replaceed, the technical solution for each embodiment of the present invention that it does not separate the essence of the corresponding technical solution
Spirit and scope.
Claims (3)
1. a kind of preparation method of the infrared focal plane array based on reading circuit, which comprises the following steps:
S1: cleaning reading circuit surface, the reading circuit are the commercial product of market purchase；
S2: pixel deposition electrode layer is made of electron beam deposition certain material, is deposited so that the pixel electrode layer discontinuously covers
The entire reading circuit surface of lid, it is characterized in that discontinuously, separate independent electrode, be divided into 1 micron to 5 microns；
S3: preparing photosensitive material layer, is prepared on substrate using spin coating or drop coating mode, continuously covers entire substrate surface,
And it is with a thickness of between 100 nanometers to 800 nanometers；
S4: pixelation handles photosensitive material layer, pixelation processing is carried out by photoetching and chemical corrosion method, so that described photosensitive
Material layer becomes discontinuous, separates independent film, is divided into 1 micron to 5 microns；
S5: deposition passivation protection layer is deposited or is spun on photosensitive material layer surface by photoetching and electron beam deposition, discontinuous to cover
Photosensitive material layer, in photosensitive material layer surface there are 5 microns to 100 microns openings, material selects silica and its a variety of poly-
Close object；
S6: deposition common electrode layer covers whole surface using with a thickness of the metal between 1 nanometer to 300 nanometers, described
Metal includes gold, silver, copper, nickel.
2. a kind of preparation method of infrared focal plane array based on reading circuit according to claim 1, feature exist
In the pixel electrode layer is made of the metal of electron beam deposition, and the metal includes gold, silver, copper, nickel；The thickness of metal layer
Degree is 30 nanometers to 300 nanometers.
3. a kind of preparation method of infrared focal plane array in reading circuit according to claim 1, which is characterized in that
The pixel electrode layer is made of the conductive oxide of electron beam deposition, and the conductive compound includes indium tin oxide target；It is conductive
Oxide skin(coating) with a thickness of 10 nanometers to 200 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910033134.6A CN109638113A (en) | 2019-01-14 | 2019-01-14 | A kind of preparation method of the infrared focal plane array based on reading circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910033134.6A CN109638113A (en) | 2019-01-14 | 2019-01-14 | A kind of preparation method of the infrared focal plane array based on reading circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109638113A true CN109638113A (en) | 2019-04-16 |
Family
ID=66060840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910033134.6A Pending CN109638113A (en) | 2019-01-14 | 2019-01-14 | A kind of preparation method of the infrared focal plane array based on reading circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN109638113A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943138A (en) * | 2019-12-11 | 2020-03-31 | 军事科学院系统工程研究院后勤科学与技术研究所 | Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method |
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|---|---|---|---|---|
| US20030160172A1 (en) * | 2001-04-13 | 2003-08-28 | Epir Ltd. | Multispectral monolithic infrared focal plane array detectors |
| CN203932063U (en) * | 2010-12-23 | 2014-11-05 | 菲力尔系统公司 | Two waveband focal plane array |
| CN107275484A (en) * | 2016-04-07 | 2017-10-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of near infrared detector and preparation method thereof |
| CN107644814A (en) * | 2017-09-15 | 2018-01-30 | 山西国惠光电科技有限公司 | A kind of flattening method of reading circuit |
-
2019
- 2019-01-14 CN CN201910033134.6A patent/CN109638113A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030160172A1 (en) * | 2001-04-13 | 2003-08-28 | Epir Ltd. | Multispectral monolithic infrared focal plane array detectors |
| CN203932063U (en) * | 2010-12-23 | 2014-11-05 | 菲力尔系统公司 | Two waveband focal plane array |
| CN107275484A (en) * | 2016-04-07 | 2017-10-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of near infrared detector and preparation method thereof |
| CN107644814A (en) * | 2017-09-15 | 2018-01-30 | 山西国惠光电科技有限公司 | A kind of flattening method of reading circuit |
Non-Patent Citations (1)
| Title |
|---|
| XIN TANG ET AL.: "Thermal Imaging with Plasmon Resonance Enhanced HgTe Colloidal Quantum Dot Photovoltaic Devices", 《ACS NANO》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943138A (en) * | 2019-12-11 | 2020-03-31 | 军事科学院系统工程研究院后勤科学与技术研究所 | Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method |
| CN110943138B (en) * | 2019-12-11 | 2021-10-08 | 唐鑫 | Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method |
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Effective date of registration: 20200420 Address after: 100037 yard C 2-1405, No.9 Sanlihe Road, Haidian District, Beijing Applicant after: Tang Xin Address before: 100071 Beijing city Fengtai District Fengti Road No. 2 Applicant before: INSTITUTE OF LOGISTICS SCIENCE AND TECHNOLOGY, INSTITUTE OF SYSTEMS ENGINEERING, ACADEMY OF MILITARY SCIENCES |
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