CN109634051A - Intermediate tone mask version wet ashing production method - Google Patents
Intermediate tone mask version wet ashing production method Download PDFInfo
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- CN109634051A CN109634051A CN201811534780.2A CN201811534780A CN109634051A CN 109634051 A CN109634051 A CN 109634051A CN 201811534780 A CN201811534780 A CN 201811534780A CN 109634051 A CN109634051 A CN 109634051A
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- Prior art keywords
- layer
- area
- ashing
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- light shield
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Abstract
The embodiment of the present invention provides a kind of intermediate tone mask version wet ashing production method, comprising: provides motherboard, motherboard includes substrate and semi-permeable layer, light transmission barrier layer, light shield layer and photoresist layer that one side surface of self-reference substrate sequentially forms；Complete photosensitive area, incomplete photosensitive area and non-photo-sensing area are formed in photoresist layer；It removes photosensitive photoresist and forms complete development zone and incomplete development zone；Successively the light shield layer on the inside of the complete development zone of ablation, light transmission barrier layer and semi-permeable layer form transparent figure area；It is reacted with photoresist layer until the remaining photoresist layer on the inside of incomplete development zone, which completely removes, to form ashing area using ashing liquid；Light shield layer on the inside of ablation ashing area forms semi-transparent graph area；Remove removing photoresistance layer.The embodiment of the present invention reacts to form ashing area with photoresist layer after development, etching form transparent figure area and incomplete development zone using ashing liquid, semi-transparent graph area is formed using the light shield layer on the inside of etching solution ablation ashing area again, without the use of ashing furnace, low manufacture cost.
Description
Technical field
The present embodiments relate to mask plate manufacturing technology fields, more particularly to a kind of intermediate tone mask version wet ashing
Production method.
Background technique
TFT-LCD can improve production efficiency, existing intermediate tone mask plate system in production using intermediate tone mask plate
It include: top loaded type method, low-laying type method, dry ashing method as method, wherein top loaded type method need to pass through photoetching, development, etch, goes
Glue, drying, plated film, gluing, baking, contraposition photoetching, development, the operation of ten three step process such as etches and removes photoresist and could complete cleaning；
Low-laying type method need to by photoetching, development, light shield layer etching, barrier layer etching, semi-permeable layer etch, remove photoresist, clean, dry, gluing,
Baking, contraposition photoetching, development, light shield layer etching and the 14 step process operation such as remove photoresist could be completed, both the above process
Complex process, step is more, and fabrication cycle is long, and can have graph position bias phenomenon when secondary contraposition photoetching.And dry method is grey
Change method need to etch by photoetching, development, light shield layer etching, barrier layer etching, semi-permeable layer, clean, is dry, ashing furnace ashing, hide
The photosphere equal ten step process operation that etches and remove photoresist is completed, though step is less, needs to use ashing furnace, equipment valuableness.
Summary of the invention
Technical problems to be solved of the embodiment of the present invention are, provide a kind of intermediate tone mask version wet ashing production side
Method, can efficient, low cost production intermediate tone mask version.
In order to solve the above technical problems, the embodiment of the present invention uses following technical scheme: a kind of intermediate tone mask version wet process
It is ashed production method, comprising the following steps:
There is provided motherboard, the motherboard include substrate and from one side surface of substrate be sequentially formed with from the inside to the outside semi-permeable layer,
Light transmission barrier layer, light shield layer and photoresist layer；
The motherboard is exposed, by adjusting the exposure energy of control different zones, has been respectively formed the photoresist layer
Full photosensitive area, incomplete photosensitive area and non-photo-sensing area；
Photoresist photosensitive in complete photosensitive area and incomplete photosensitive area is removed using developer solution and is respectively formed completely aobvious
Shadow zone and incomplete development zone；
Light transmission figure is formed using light shield layer, light transmission barrier layer and the semi-permeable layer on the inside of complete development zone described in etching solution successively ablation
Shape area；
It is reacted with the photoresist layer until the remaining photoresist layer on the inside of the incomplete development zone is by having reacted using ashing liquid
Full removal forms ashing area；
Semi-transparent graph area is formed using the light shield layer on the inside of ashing area described in etching solution ablation；
Remaining photoresist layer is removed, the intermediate tone mask version finished product for having transparent figure area and semi-transparent graph area is obtained.
Further, the ashing liquid is the mixed solution of the concentrated sulfuric acid and hydrogen peroxide, the concentrated sulfuric acid and hydrogen peroxide
Mass ratio be 7-8:3.
Further, the mass percent concentration of the concentrated sulfuric acid solution is not less than 98%.
Further, the light shield layer using on the inside of complete development zone described in etching solution successively ablation, light transmission barrier layer
Forming transparent figure area with semi-permeable layer ablation includes:
Using the light shield layer on the inside of the first complete development zone of etching solution ablation only reacted with light shield layer；
Using the light transmission barrier layer on the inside of the second complete development zone of etching solution ablation only reacted with light transmission barrier layer；
Using the semi-permeable layer on the inside of the complete development zone of third etching solution ablation only reacted with semi-permeable layer.
Further, it is formed using the light shield layer on the inside of ashing area described in the first etching solution ablation only reacted with light shield layer
Semi-transparent graph area.
Further, when removing remaining photoresist layer, chemical reaction is passed through using the liquid parting that can be reacted with photoresist
Remove removing photoresistance layer.
By adopting the above technical scheme, the embodiment of the present invention at least has the advantages that the embodiment of the present invention is passing through
Development, etching conventional processes are reacted with photoresist layer using ashing liquid until endless after forming transparent figure area and incomplete development zone
Remaining photoresist layer on the inside of full development zone removes to form ashing area by fully reacting, can be ashed area using etching solution ablation again
The light shield layer of inside forms semi-transparent graph area, and production method is relatively easy easy to operate, and step is few, does not need using ashing furnace,
Cost of manufacture is effectively reduced.
Detailed description of the invention
Fig. 1 is the process step schematic diagram of intermediate tone mask version wet ashing production method one embodiment of the present invention.
Fig. 2 is the step S4 detailed process step of intermediate tone mask version wet ashing production method one embodiment of the present invention
Rapid schematic diagram.
Fig. 3 is the schematic cross-section of motherboard in intermediate tone mask version wet ashing production method one embodiment of the present invention.
Fig. 4 is the section in intermediate tone mask version wet ashing production method one embodiment of the present invention after the completion of step S2
Schematic diagram.
Fig. 5 is the section in intermediate tone mask version wet ashing production method one embodiment of the present invention after the completion of step S3
Schematic diagram.
Fig. 6 is the section in intermediate tone mask version wet ashing production method one embodiment of the present invention after the completion of step S4
Schematic diagram.
Fig. 7 is the section in intermediate tone mask version wet ashing production method one embodiment of the present invention after the completion of step S5
Schematic diagram.
Fig. 8 is the section in intermediate tone mask version wet ashing production method one embodiment of the present invention after the completion of step S6
Schematic diagram.
Fig. 9 is the section in intermediate tone mask version wet ashing production method one embodiment of the present invention after the completion of step S7
Schematic diagram.
Specific embodiment
Invention is further described in detail in the following with reference to the drawings and specific embodiments.It should be appreciated that signal below
Property embodiment and explanation be only used to explain the present invention, it is not as a limitation of the invention, moreover, in the absence of conflict,
The feature in embodiment and embodiment in the present invention can be combined with each other.
As shown in Figure 1, an alternative embodiment of the invention provides a kind of intermediate tone mask version wet ashing production method, wrap
Include following steps:
S1: providing motherboard 1, and the motherboard 1 includes substrate 10 and sequentially forms from the inside to the outside from 10 1 side surface of substrate
Semi-permeable layer 11, light transmission barrier layer 21, light shield layer 31 and photoresist layer 41, as shown in Figure 3；
S2: being exposed the motherboard 1, by adjusting the exposure energy of control different zones, distinguishes in the photoresist layer 41
Complete photosensitive area 51, incomplete photosensitive area 52 and non-photo-sensing area 53 are formed, as shown in Figure 4；
S3: photosensitive photoresist in complete photosensitive area 51 and incomplete photosensitive area 52 is removed using developer solution and is respectively formed
Complete development zone 61, incomplete development zone 62, as shown in Figure 5；
S4: using light shield layer 31, light transmission barrier layer 21 and the semi-permeable layer of 61 inside of complete development zone described in etching solution successively ablation
11 form transparent figure area 71, as shown in Figure 6；
S5: being reacted using ashing liquid with the photoresist layer 41 until the remaining photoresist layer 41 of 62 inside of the incomplete development zone is logical
It crosses fully reacting to remove to form ashing area 81, as shown in Figure 7；
S6: semi-transparent graph area 91 is formed using the light shield layer 31 of 81 inside of ashing area described in etching solution ablation, as shown in Figure 8；
S7: removing remaining photoresist layer 41, obtain with transparent figure area 71, semi-transparent graph area 91 intermediate tone mask version at
Product, as shown in Figure 9.
The embodiment of the present invention is after forming transparent figure area 71 and not exclusively development zone 62 by development, etching conventional processes
It is reacted with photoresist layer 41 until the remaining photoresist layer 41 of 62 inside of incomplete development zone is removed by fully reacting using ashing liquid
Ashing area 81 is formed, semi-transparent graph area 91, production method are formed using the light shield layer 31 of 81 inside of etching solution ablation ashing area
Relatively easy easy to operate, step is few, does not need that cost of manufacture is effectively reduced using ashing furnace.
In the specific implementation, the semi-permeable layer 11, light transmission barrier layer are formed using the method for physical sputtering or chemical deposition
21 and light shield layer 31.Photoresist is coated on the light shield layer 31 using Spin coating processes or Slit coating processes
Surface forms photoresist layer 41.The above method, which can be obtained efficiently, sequentially forms semi-permeable layer 11, light transmission in 10 1 side surface of substrate
It obstructs 21, light shield layer 31 and photoresist layer 41 and obtains motherboard 1, improve the efficiency of production method.The substrate 10 is sodium calcium glass
Glass, quartz glass or Pyrex are one such or other any transparent materials.The semi-permeable layer 11 includes as master
Cr, Si, Mo, Ta, Ti and Al of element are wanted, and is in the essential element as composed by Cr, Si, Mo, Ta, Ti and Al
The compound of at least two or more elements mixing, or also it is mixed at least one additives selected from Cox, Ox and Nx.It can
It is extensive with the substrate 10 and 11 selection range of semi-permeable layer that are applied to the method for the present invention, facilitate in actual production, synthesis is examined
Consider various aspects factor, chooses 11 material of most suitable substrate 10 and semi-permeable layer.
In another alternative embodiment of the invention, the ashing liquid is the mixed solution of the concentrated sulfuric acid and hydrogen peroxide, institute
The mass ratio for stating the concentrated sulfuric acid and hydrogen peroxide is 7-8:3.In the specific implementation, the mass ratio of the concentrated sulfuric acid and hydrogen peroxide can
To use 7:3.The embodiment of the present invention uses the mixed solution of the concentrated sulfuric acid and hydrogen peroxide with oxidisability as ashing liquid, can
It efficiently reacts with photoresist layer 41 and photoresist will be removed.
In another alternative embodiment of the invention, the mass percent concentration of the concentrated sulfuric acid solution is not less than 98%.
What is generallyd use is the concentrated sulfuric acid that mass concentration is 98%.The embodiment of the present invention is not less than 98% concentrated sulfuric acid solution using concentration,
With strong oxidizing property, it can efficiently react with photoresist layer 41 and remove photoresist.
In another alternative embodiment of the invention, the step S4 is specifically included:
S41: using the light shield layer 31 of complete 61 inside of development zone of the first etching solution ablation only reacted with light shield layer 31；
S42: using the light transmission barrier layer of complete 61 inside of development zone of the second etching solution ablation only reacted with light transmission barrier layer 21
21；
S43: using the semi-permeable layer 11 of complete 61 inside of development zone of the third etching solution ablation only reacted with semi-permeable layer 11.
The embodiment of the present invention comes successively ablation light shield layer 31, light transmission barrier layer 21 and semi-transparent by using different etching solutions
Layer 11 keeps etching process more controllable, improves production precision.
In another alternative embodiment of the invention, using ash described in the first etching solution ablation only reacted with light shield layer 31
The light shield layer 31 for changing 81 inside of area forms semi-transparent graph area 91.The embodiment of the present invention is using the only reacted with light shield layer 31
The light shield layer 31 of one etching solution ablation ashing area, 81 inside is avoided since light shield layer 31 is different from 21 material of light transmission barrier layer
Wrong etching is carried out to light transmission barrier layer 21, improves producing efficiency and precision.
In another of the invention alternative embodiment, when removing remaining photoresist layer 41, using can be reacted with photoresist
Liquid parting by chemical reaction remove removing photoresistance layer 41.The embodiment of the present invention is passed through using the liquid parting that can be reacted with photoresist
Removing photoresistance layer 41 is removed in chemical reaction, effectively removes remaining photoresist layer 41, obtains and has transparent figure area 71 and semi-transparent figure
The intermediate tone mask version finished product in area 91.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form, within these are all belonged to the scope of protection of the present invention.
Claims (6)
1. a kind of intermediate tone mask version wet ashing production method, which comprises the following steps:
Motherboard is provided, the motherboard include substrate and the semi-permeable layer sequentially formed from the inside to the outside from one side surface of substrate,
Light transmission barrier layer, light shield layer and photoresist layer；
The motherboard is exposed, by adjusting the exposure energy of control different zones, has been respectively formed in the photoresist layer
Full photosensitive area, incomplete photosensitive area and non-photo-sensing area；
Photoresist photosensitive in complete photosensitive area and incomplete photosensitive area is removed using developer solution and is respectively formed completely aobvious
Shadow zone and incomplete development zone；
Light transmission figure is formed using light shield layer, light transmission barrier layer and the semi-permeable layer on the inside of complete development zone described in etching solution successively ablation
Shape area；
It is reacted with the photoresist layer until the remaining photoresist layer on the inside of the incomplete development zone is by having reacted using ashing liquid
Full removal forms ashing area；
Semi-transparent graph area is formed using the light shield layer on the inside of ashing area described in etching solution ablation；
Remaining photoresist layer is removed, the intermediate tone mask version finished product for having transparent figure area and semi-transparent graph area is obtained.
2. intermediate tone mask version wet ashing production method as described in claim 1, which is characterized in that the ashing liquid is dense
The mass ratio of the mixed solution of sulfuric acid and hydrogen peroxide, the concentrated sulfuric acid and hydrogen peroxide is 7-8:3.
3. intermediate tone mask version wet ashing production method as claimed in claim 2, which is characterized in that the concentrated sulfuric acid solution
Mass percent concentration be not less than 98%.
4. intermediate tone mask version wet ashing production method as described in claim 1, which is characterized in that described to use etching solution
Successively the light shield layer on the inside of complete development zone described in ablation, light transmission barrier layer and semi-permeable layer ablation formation transparent figure area include:
Using the light shield layer on the inside of the first complete development zone of etching solution ablation only reacted with light shield layer；
Using the light transmission barrier layer on the inside of the second complete development zone of etching solution ablation only reacted with light transmission barrier layer；
Using the semi-permeable layer on the inside of the complete development zone of third etching solution ablation only reacted with semi-permeable layer.
5. intermediate tone mask version wet ashing production method as described in claim 1, which is characterized in that use and light shield layer
Light shield layer on the inside of ashing area described in first etching solution ablation of reaction forms semi-transparent graph area.
6. intermediate tone mask version wet ashing production method as described in claim 1, which is characterized in that remove remaining photoresist
When layer, removing photoresistance layer is gone by chemical reaction using the liquid parting that can be reacted with photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811534780.2A CN109634051A (en) | 2018-12-14 | 2018-12-14 | Intermediate tone mask version wet ashing production method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811534780.2A CN109634051A (en) | 2018-12-14 | 2018-12-14 | Intermediate tone mask version wet ashing production method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010128003A (en) * | 2008-11-25 | 2010-06-10 | Ulvac Seimaku Kk | Halftone mask, halftone mask blank, method for manufacturing halftone mask, and method for manufacturing halftone mask blank |
| TW201237546A (en) * | 2010-12-27 | 2012-09-16 | Ulvac Coating Corp | Halftone mask, halftone mask blanks and halftone mask manufacturing method |
| CN108196421A (en) * | 2017-12-14 | 2018-06-22 | 深圳市路维光电股份有限公司 | Gray level mask plate production method |
| CN109254493A (en) * | 2018-11-30 | 2019-01-22 | 深圳市路维光电股份有限公司 | Intermediate tone mask version production method |
-
2018
- 2018-12-14 CN CN201811534780.2A patent/CN109634051A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010128003A (en) * | 2008-11-25 | 2010-06-10 | Ulvac Seimaku Kk | Halftone mask, halftone mask blank, method for manufacturing halftone mask, and method for manufacturing halftone mask blank |
| TW201237546A (en) * | 2010-12-27 | 2012-09-16 | Ulvac Coating Corp | Halftone mask, halftone mask blanks and halftone mask manufacturing method |
| CN108196421A (en) * | 2017-12-14 | 2018-06-22 | 深圳市路维光电股份有限公司 | Gray level mask plate production method |
| CN109254493A (en) * | 2018-11-30 | 2019-01-22 | 深圳市路维光电股份有限公司 | Intermediate tone mask version production method |
Non-Patent Citations (1)
| Title |
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| 莫纯昌等: "《物理电子技术中的材料与工艺》", 30 June 1986 * |
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