CN109632094A - Based on periodic grid leak pole MOSFET terahertz detector - Google Patents
Based on periodic grid leak pole MOSFET terahertz detector Download PDFInfo
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- CN109632094A CN109632094A CN201811456367.9A CN201811456367A CN109632094A CN 109632094 A CN109632094 A CN 109632094A CN 201811456367 A CN201811456367 A CN 201811456367A CN 109632094 A CN109632094 A CN 109632094A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
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Abstract
The invention discloses one kind to be based on periodic grid leak pole MOSFET terahertz detector, including metal gate MOSFET, low-noise preamplifier and voltage feedback loop with periodic grid leak pole and its various different pattern forms；The grid of metal gate MOSFET and drain electrode are used to receive terahertz signal, the grid of metal gate MOSFET connects No.1 bias voltage source through No.1 biasing resistor, and No.1 capacitance is connected between the source electrode of metal gate MOSFET and the positive input of low-noise preamplifier；The positive input of the low-noise preamplifier connects No. two bias voltage sources through No. two biasing resistors；Voltage feedback loop includes feedback resistance, ground resistance, No. two capacitances and No. three capacitances.The present invention realizes the adjusting of THz response wave band range by adjusting the rasterisation structural parameters of grid leak pole, to improve the detectivity of detector, realizes narrow band terahertz band detection.
Description
Technical field
The present invention relates to terahertz detector technical fields, and more specifically, it relates to one kind to be based on periodic
Grid leak pole MOSFET terahertz detector.
Background technique
THz wave is the electromagnetic wave on electromagnetic spectrum between microwave and infrared light, and frequency is on the left side 0.1~10THz
The right side, wavelength correspond to 3mm~30 μm.Terahertz Technology is one of forward position and hot fields of current information science technology research, closely
In the past few years, the extensive concern by countries in the world research institution.Beauty, day, Ou Deng developed country successively evaluate Terahertz Technology
For " the ten big technologies for changing future world " and " the big key strategy target of national mainstay ten ", huge fund is put into ram all too
The international status in hertz field.Terahertz has broad application prospect, in astrophysics, material science, biomedicine, ring
There is extensive technical application in the fields such as border science, spectrum and imaging technique, information science technology.Terahertz Technology can be significant
Promoted China aerospace, space communication, biologic medical, even in terms of strength.And as Terahertz
The terahertz detector of application foundation is the critical component of Terahertz security protection, detection.
In Terahertz frequency range since any lead wire of conductor can all bring extremely serious ghost effect, so that most bases
Be difficult to control in the detector performance of III-V/II-VI race technique, or even idle situation occur, thus constrain it is this kind of too
The functionization of hertz detector.Develop the room temperature terahertz detector based on CMOS compatible technology be terahertz detection and array at
Basis as realizing low cost, large-scale promotion.And the generally existing sound of the current existing detector based on CMOS compatible technology
Answer speed is slow, sensitivity is low, it is expensive, usually require the shortcomings such as work at low temperature, this is largely limited
The integrated application and development of Terahertz Technology.Therefore development has high-responsivity, high sensitivity, cheap CMOS compatible
Room temperature terahertz detector become problem in the urgent need to address in the integrated application of Terahertz Technology and development process.
Summary of the invention
The present invention provides one kind based on periodic grid leak pole MOSFET terahertz detector, passes through and adjusts grid leak pole
Rasterisation structural parameters (width, length, region area, period and the pattern form of grating) Lai Shixian THz response wave band model
The adjusting enclosed, to improve the detectivity of detector；Drawn by photoetching, the regulation of nano impression and artificial micro-structure material
Enter period optical grating construction adjustable and with various different pattern forms and substitute the grid leak pole of original metal gate MOSFET, realize by
The grid leak aurora gated of cmos compatible low dimensional semiconductor material (such as nano wire) preparation, generates grid leak pole and THz wave altogether
Vibration enhances plasma resonance effect, to improve the response speed of detector.
The purpose of the present invention is what is be achieved through the following technical solutions.
The present invention is based on periodic grid leak pole MOSFET terahertz detectors, including with periodic grid
Metal gate MOSFET, low-noise preamplifier and the voltage feedback loop of drain electrode and its various different pattern forms；
The grid of the metal gate MOSFET and drain electrode are used to receive terahertz signal, the grid of the metal gate MOSFET
Pole connects No.1 bias voltage source through No.1 biasing resistor, the source electrode of the metal gate MOSFET and low-noise preamplifier
No.1 capacitance is connected between positive input；The positive input of the low-noise preamplifier is through No. two biased electricals
Resistance No. two bias voltage sources of connection；
The voltage feedback loop includes feedback resistance, ground resistance, No. two capacitances and No. three capacitances, described
Feedback resistance is connected between the output end of low-noise preamplifier and reverse input end, and ground resistance one end connection is low
The reverse input end of noise preamps, the other end are grounded through No. two capacitances, No. three capacitance one end connection
The output end of low-noise preamplifier, other end ground connection.
The No.1 bias voltage source and No.1 biasing resistor are used to provide direct current supply to metal gate MOSFET, pass through tune
Save the rasterisation structural parameters (width, length, region area, period and the pattern form of grating) of metal gate MOSFET grid leak pole
To realize the adjusting of THz response wave band range.
Compared with prior art, the beneficial effects brought by the technical solution of the present invention are as follows:
(1) the present invention is based on silicon base CMOS techniques, convenient for integrated with back-end circuit, it is easy to accomplish scale of mass production, in turn
Reduce detector cost.
(2) present invention can pass through rasterisation structural parameters (width of grating, length, region area, the week of adjusting grid leak pole
Phase and pattern form) Lai Shixian THz response wave band range adjusting.
(3) present invention can reduce Terahertz letter faint in space using the method for rasterisation metal gate MOSFET grid leak pole
The diffusion and loss problem of number plasma ejected with metal structure on grid and drain region metal structure in communication process.
(4) on-chip antenna loss is big, gain and radiation efficiency are low, pass through without can effectively avoid using antenna by the present invention
The problems such as DRC design rule verification difficulty is big；Chip area greatly reduces, and significantly reduces production cost.
(5) present invention can make grid leak pole and the Terahertz of rasterisation using grating to regulating and controlling effects such as the resonance principles of light
Wave generates resonance, to improve photoelectric conversion efficiency.
Detailed description of the invention
Fig. 1 is that two kinds of metal gate MOSFET with periodic grid drain electrode structure and different grating pattern forms show
It is intended to；
Fig. 2 is based on periodic grid leak pole MOSFET terahertz detector circuit diagram.
Appended drawing reference: Vb1 No.1 bias voltage source, No. bis- bias voltage sources of Vb2, Rb1 No.1 biasing resistor, Rb2 bis-
Biasing resistor, C1 No.1 capacitance, No. bis- capacitances of C2, No. tri- capacitances of C3, Q1 metal gate MOSFET, Q2 low noise
Preamplifier, Rf feedback resistance, Rg ground resistance, GND.
Specific embodiment
The invention will be further described with reference to the accompanying drawing.
The present invention is based on periodic grid leak pole MOSFET terahertz detectors, as depicted in figs. 1 and 2, including tool
There are metal gate MOSFET Q1, the low-noise preamplifier Q2 of periodic grid leak pole and its various different pattern forms
And voltage feedback loop.
The grid G rating-Gate and drain electrode Grating-D of the metal gate MOSFET Q1 is used to receive Terahertz
Signal.The grid G rating-Gate of the metal gate MOSFET Q1 is loaded with No.1 biasing through the Rb1 connection of No.1 biasing resistor
Voltage source Vb1 can be by adjusting metal gate MOSFET Q1 grid for providing direct current supply to metal gate MOSFET Q1
Rasterisation structural parameters (width of grating, length, region area, the period of Grating-Gate electrode and drain electrode Grating-D
And pattern form) Lai Shixian THz response wave band range adjusting, to improve the detectivity of detector.Wherein, No.1 is inclined
Voltage source Vb1 is set as fixed bias DC voltage source.
It is connected between the source S of the metal gate MOSFET Q1 and the positive input of low-noise preamplifier Q2
No.1 capacitance C1.The positive input of the low-noise preamplifier Q2 is also connected with No. two through No. two biasing resistor Rb2
Bias voltage source Vb2.Wherein, No. two biasing resistor Rb2 and No. two bias voltage source Vb2 are for giving low-noise preamplifier Q2
Power supply；No. two bias voltage source Vb2 are fixed bias DC voltage source.
The voltage feedback loop is mainly by feedback resistance Rf, ground resistance Rg, No. two capacitance C2 and No. three blockings
Capacitor C3 composition.The feedback resistance Rf is connected between the output end and reverse input end of low-noise preamplifier Q2, institute
The reverse input end of the one end ground resistance Rg connection low-noise preamplifier Q2 is stated, the other end is grounded through No. two capacitance C2
GND, the output end of No. three one end capacitance C3 connection low-noise preamplifier Q2, the other end are grounded GND.Wherein,
The adjusting of low-noise preamplifier Q2 gain may be implemented in resistance value by changing feedback resistance Rf and ground resistance Rg.
It is direct current the present invention is based on the output voltage signal of periodic grid leak pole MOSFET terahertz detector
Signal is pressed, the size of the d. c. voltage signal and the radiation intensity of terahertz signal are directly proportional, according to the present invention terahertz detection
The strength information of the available incident terahertz signal of the size of device output voltage signal, to realize terahertz detection.
Although function and the course of work of the invention are described above in conjunction with attached drawing, the invention is not limited to
Above-mentioned concrete function and the course of work, the above mentioned embodiment is only schematical, rather than restrictive, ability
The those of ordinary skill in domain under the inspiration of the present invention, is not departing from present inventive concept and scope of the claimed protection situation
Under, many forms can also be made, all of these belong to the protection of the present invention.
Claims (2)
1. one kind is based on periodic grid leak pole MOSFET terahertz detector, which is characterized in that including having periodically
Rasterize metal gate MOSFET (Q1), low-noise preamplifier (Q2) and the voltage of grid leak pole and its various different pattern forms
Feedback loop；
The grid of the metal gate MOSFET (Q1) and drain electrode are used to receive terahertz signal, the metal gate MOSFET (Q1)
Grid through No.1 biasing resistor (Rb1) connect No.1 bias voltage source (Vb1), the source electrode of the metal gate MOSFET (Q1) and
No.1 capacitance (C1) is connected between the positive input of low-noise preamplifier (Q2)；The preposition amplification of low noise
The positive input of device (Q2) connects No. two bias voltage sources (Vb2) through No. two biasing resistors (Rb2)；
The voltage feedback loop includes feedback resistance (Rf), ground resistance (Rg), No. two capacitances (C2) and No. three blockings
Capacitor (C3), the feedback resistance (Rf) are connected between the output end and reverse input end of low-noise preamplifier (Q2),
The reverse input end of ground resistance one end (Rg) connection low-noise preamplifier (Q2), the other end is through No. two capacitances
(C2) it is grounded (GND), No. three capacitances one end (C3) connects the output end of low-noise preamplifier (Q2), the other end
It is grounded (GND).
2. according to claim 1 be based on periodic grid leak pole MOSFET terahertz detector, which is characterized in that
The No.1 bias voltage source (Vb1) and No.1 biasing resistor (Rb1) are used to provide direct current supply to metal gate MOSFET (Q1),
By the rasterisation structural parameters (width of grating, length, region area, the period that adjust metal gate MOSFET (Q1) grid leak pole
And pattern form) Lai Shixian THz response wave band range adjusting.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811456367.9A CN109632094B (en) | 2018-11-30 | 2018-11-30 | MOSFET terahertz detector based on periodic grating grid drain electrode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811456367.9A CN109632094B (en) | 2018-11-30 | 2018-11-30 | MOSFET terahertz detector based on periodic grating grid drain electrode |
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| CN109632094A true CN109632094A (en) | 2019-04-16 |
| CN109632094B CN109632094B (en) | 2021-02-05 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962410A (en) * | 1989-08-04 | 1990-10-09 | Arizona Board Of Regents | QUADFET-A novel field effect transistor |
| US7420225B1 (en) * | 2005-11-30 | 2008-09-02 | Sandia Corporation | Direct detector for terahertz radiation |
| CN102279476A (en) * | 2011-07-15 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-speed electrically-modulating terahertz modulator |
| US20140091376A1 (en) * | 2011-05-31 | 2014-04-03 | Johann Wolfgang Goethe-Universitat Frankfurt A.M. | Monolithically Integrated Antenna and Receiver Circuit |
| CN105140248A (en) * | 2015-07-23 | 2015-12-09 | 南京大学 | Complementary metal oxide semiconductor (CMOS)-based high-response working method for terahertz sensor |
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| US20160172527A1 (en) * | 2012-12-03 | 2016-06-16 | Sandia Corporation | Photodetector with Interdigitated Nanoelectrode Grating Antenna |
| US20160305823A1 (en) * | 2015-04-15 | 2016-10-20 | University Of Rochester | THz RADIATION DETECTION IN STANDARD CMOS TECHNOLOGIES BASED ON THERMIONIC EMISSION |
-
2018
- 2018-11-30 CN CN201811456367.9A patent/CN109632094B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962410A (en) * | 1989-08-04 | 1990-10-09 | Arizona Board Of Regents | QUADFET-A novel field effect transistor |
| US7420225B1 (en) * | 2005-11-30 | 2008-09-02 | Sandia Corporation | Direct detector for terahertz radiation |
| US20140091376A1 (en) * | 2011-05-31 | 2014-04-03 | Johann Wolfgang Goethe-Universitat Frankfurt A.M. | Monolithically Integrated Antenna and Receiver Circuit |
| CN102279476A (en) * | 2011-07-15 | 2011-12-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-speed electrically-modulating terahertz modulator |
| US20160172527A1 (en) * | 2012-12-03 | 2016-06-16 | Sandia Corporation | Photodetector with Interdigitated Nanoelectrode Grating Antenna |
| US20160305823A1 (en) * | 2015-04-15 | 2016-10-20 | University Of Rochester | THz RADIATION DETECTION IN STANDARD CMOS TECHNOLOGIES BASED ON THERMIONIC EMISSION |
| CN105140248A (en) * | 2015-07-23 | 2015-12-09 | 南京大学 | Complementary metal oxide semiconductor (CMOS)-based high-response working method for terahertz sensor |
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
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