CN109628911A - A method of eliminating first effect of plasma chemical vapor deposition - Google Patents
A method of eliminating first effect of plasma chemical vapor deposition Download PDFInfo
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- CN109628911A CN109628911A CN201811597699.9A CN201811597699A CN109628911A CN 109628911 A CN109628911 A CN 109628911A CN 201811597699 A CN201811597699 A CN 201811597699A CN 109628911 A CN109628911 A CN 109628911A
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- Prior art keywords
- effect
- chemical vapor
- vapor deposition
- plasma chemical
- eliminating
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Abstract
The invention discloses a kind of methods for eliminating first effect of plasma chemical vapor deposition, belong to ic manufacturing technology field.Through CVD equipment cavity after over etching gas cleans cavity and base-plates surface, increases " heating " step, entire cavity environment is improved；" heating " step is to improve CVD equipment cavity environment temperature.The present invention is suitable for using plasma deposition medium thin-film technique, and first effect of plasma chemical vapor deposition system can be obviously eliminated by the optimization and improvement of technique.Invention has the advantages of high efficiency, saves cost, can effectively eliminate first effect of CVD equipment deposit film, be conducive to the thickness uniformity between the stability and piece of raising technique.
Description
Technical field
The invention belongs to ic manufacturing technology fields, and in particular to a kind of elimination plasma chemical vapor deposition is first
The method of piece effect.
Background technique
Plasma chemical vapor deposition equipment becomes one of integrated circuit thin-film deposit main device type in field,
Chip manufacturing uses on a large scale in field.In routine use, the life of progress film after technique conversion, maintenance terminate, are idle
Long, for the cavity of CVD equipment because of state change in cavity, the film of growth will receive the influence of first effect, i.e., former growths
Film thickness can and normal product make a big difference, especially high density plasma CVD equipment
(HDP-CVD) or inductive coupling chemical deposition equipment (ICP-CVD), cavity environment is after prolonged idle (idle),
The normal running environment of cleaning (clean) menu restorer is executed, the film then deposited will appear " first effect ", it may be assumed that
The thickness of first wafer growth thickens, and thickness slowly declines later, and stable thickness fluctuation can be just returned to after multi-disc.
Plasma apparatus uses neutral gear piece to avoid first effect in the process of running at present, i.e., in formally growth product
Before, several are grown with neutral gear piece first, these neutral gear pieces is allowed to bear first effect, then formal growth again.This method is time-consuming
It is inefficient, a large amount of process gas and neutral gear piece are consumed, it is at high cost.
Summary of the invention
Goal of the invention: aiming at the problems existing in the prior art, the purpose of the present invention is to provide a kind of elimination plasmas
The method of first effect of body chemical vapor deposition.Invention has the advantages of high efficiency, saves cost, can effectively eliminate CVD equipment deposit
First effect of film is conducive to the thickness uniformity between the stability and piece of raising technique.
Technical solution: to solve the above-mentioned problems, the technical solution adopted in the present invention is as follows:
A method of first effect of plasma chemical vapor deposition being eliminated, by CVD equipment cavity through over etching
After gas cleans cavity and base-plates surface, increases " heating " step, entire cavity environment is improved；" heating " step
For the temperature for improving CVD equipment cavity." heating " step concrete operations are as follows:
Vacuumize process is carried out to CVD equipment cavity first；Then all RF radio frequencies are opened, bias is closed；It is passed through etching
Property gas, the gas do not react with deposition substance；And it is continually fed into gas.
Preferably, vacuumize process is carried out to CVD equipment cavity using molecular pump or dry pump.
Preferably, the RF radio frequency is opened to the 60% of RF range.
Preferably, the gas is O2、N2O, Ar, He or H2One or more of gas mixed gas.
Preferably, the gas is passed through the time and continues 30~60s.
Preferably, " cleaning-plated film-heating " one or more circulations can be set in cleaning menu.
The utility model has the advantages that compared with prior art, the invention has the advantages that
(1) present invention is suitable for using plasma deposition medium thin-film technique in IC manufacturing field, passes through work
The optimization and improvement of skill can obviously eliminate first effect of plasma chemical vapor deposition system.
(2) invention has the advantages of high efficiency, saves cost, can effectively eliminate first effect of CVD equipment deposit film, favorably
The thickness uniformity between the stability and piece for improving technique.
Detailed description of the invention
Fig. 1 is the relational graph between the cavity environment temperature and thickness of deposited film of CVD equipment；
Fig. 2 is the first effect example of deposited film thickness conventionally handled CVD equipment cavity environment
Figure.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, right combined with specific embodiments below
A specific embodiment of the invention is described in detail.
Embodiment 1
Processing work before conventionally plasma chemical vapor deposition device is worked.
By the way that CVD equipment cavity, after over etching gas cleans cavity and base-plates surface, CVD equipment enters work journey
Sequence.This CVD equipment manufacturer and model Shandong river in Shangdong Province instrument LMEC-300.
Fig. 2 is the case where conventionally processing CVD equipment cavity environment, and obtained CVD equipment deposition is thin
First effect instance graph of film thickness.As shown in Figure 2, the thickness of first film produced is very big, with production process
Carry out film thickness be gradually reduced, first film compared with the 5th film, thickness differ very big, five produced
A film it is in uneven thickness, thus illustrate that first effect is obviously.
Embodiment 2
A method of eliminate first effect of plasma chemical vapor deposition, the manufacturer of the CVD equipment used and
Model Shandong river in Shangdong Province instrument LMEC-300.Cavity and base-plates surface are cleaned through over etching gas by CVD equipment cavity, is executed clear
After clean menu, increases " heating " step, entire cavity environment is improved；" heating " step is to improve CVD equipment cavity
Temperature.
The concrete operations of " heating " step are as follows:
Vacuumize process is carried out to CVD equipment cavity using molecular pump first, chamber pressure control is being greater than 50mT；Then
All RF radio frequencies are opened, are opened to the 60% of RF range, bias is closed；Be passed through oxygen, oxygen flux control in 50~500sccm,
And continue 30s." cleaning-plated film-heating " more than one cyclic process can be set in cleaning menu.
CVD equipment cavity environment temperature is handled by above step, primary surface heating, mould are expanded by plasma
The quasi- environment really grown, difference is the not long film of this process, can be carried out by the hygrosensor that pedestal or wall design
Monitoring and compensation；The relational graph between the cavity environment temperature of CVD equipment and thickness of deposited film is obtained, as shown in Figure 1.By
For Fig. 1 it is found that when CVD equipment cavity environment temperature is lower, the film thickness produced is bigger, thus illustrates to improve CVD equipment
Cavity environment temperature advantageously reduces the thickness of deposition film.
In conclusion the present invention obviously eliminates plasma chemical vapor deposition system by the optimization and improvement of technique
First effect, effectively improve uniformity and technology stability between the piece of the technique of depositing device.And the working time is short,
It is high-efficient, save cost.
Claims (7)
1. a kind of method for eliminating first effect of plasma chemical vapor deposition, which is characterized in that passed through by CVD equipment cavity
After over etching gas cleans cavity and base-plates surface, increases " heating " step, entire cavity environment is improved；It is described
" heating " step is to improve CVD equipment cavity environment temperature.
2. the method according to claim 1 for eliminating first effect of plasma chemical vapor deposition, which is characterized in that institute
State " heating " step concrete operations are as follows:
Vacuumize process is carried out to CVD equipment cavity first；Then all RF radio frequencies are opened, bias is closed；It is passed through etching property gas
Body, the gas do not react with deposition substance；And it is continually fed into gas.
3. the method according to claim 2 for eliminating first effect of plasma chemical vapor deposition, which is characterized in that adopt
Vacuumize process is carried out to CVD equipment cavity with molecular pump or dry pump.
4. the method according to claim 2 for eliminating first effect of plasma chemical vapor deposition, which is characterized in that institute
RF radio frequency is stated to open to the 60% of RF range.
5. the method according to claim 2 for eliminating first effect of plasma chemical vapor deposition, which is characterized in that institute
Stating gas is O2、N2O, Ar, He or H2One of or multiple gases mixed gas.
6. the method according to claim 2 for eliminating first effect of plasma chemical vapor deposition, which is characterized in that institute
It states etching property gas and is continually fed into the time as 30~60s.
7. the method according to claim 1 for eliminating first effect of plasma chemical vapor deposition, which is characterized in that
" cleaning-plated film-heating " one or more circulations can be set in cleaning menu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811597699.9A CN109628911A (en) | 2018-12-25 | 2018-12-25 | A method of eliminating first effect of plasma chemical vapor deposition |
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| CN201811597699.9A CN109628911A (en) | 2018-12-25 | 2018-12-25 | A method of eliminating first effect of plasma chemical vapor deposition |
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| CN109628911A true CN109628911A (en) | 2019-04-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113403606A (en) * | 2021-05-17 | 2021-09-17 | 长鑫存储技术有限公司 | Method for improving first wafer effect in film deposition process |
| CN114752918A (en) * | 2021-01-08 | 2022-07-15 | 江苏鲁汶仪器有限公司 | Cleaning method of cavity |
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| US5985735A (en) * | 1995-09-29 | 1999-11-16 | Intel Corporation | Trench isolation process using nitrogen preconditioning to reduce crystal defects |
| CN101092691A (en) * | 2006-06-05 | 2007-12-26 | 应用材料公司 | Elimination of first wafer effect for pecvd films |
| CN101562122A (en) * | 2008-04-16 | 2009-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry etching method and silicon wafer etching method |
| CN105161403A (en) * | 2015-08-06 | 2015-12-16 | 沈阳拓荆科技有限公司 | Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method |
| CN105185691A (en) * | 2014-06-18 | 2015-12-23 | 上海华力微电子有限公司 | Method for eliminating first sheet effect |
-
2018
- 2018-12-25 CN CN201811597699.9A patent/CN109628911A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985735A (en) * | 1995-09-29 | 1999-11-16 | Intel Corporation | Trench isolation process using nitrogen preconditioning to reduce crystal defects |
| CN101092691A (en) * | 2006-06-05 | 2007-12-26 | 应用材料公司 | Elimination of first wafer effect for pecvd films |
| CN101562122A (en) * | 2008-04-16 | 2009-10-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Dry etching method and silicon wafer etching method |
| CN105185691A (en) * | 2014-06-18 | 2015-12-23 | 上海华力微电子有限公司 | Method for eliminating first sheet effect |
| CN105161403A (en) * | 2015-08-06 | 2015-12-16 | 沈阳拓荆科技有限公司 | Method for eliminating first sheet effect problem caused by cavity idling by adopting gas purging method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114752918A (en) * | 2021-01-08 | 2022-07-15 | 江苏鲁汶仪器有限公司 | Cleaning method of cavity |
| CN113403606A (en) * | 2021-05-17 | 2021-09-17 | 长鑫存储技术有限公司 | Method for improving first wafer effect in film deposition process |
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Application publication date: 20190416 |
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