CN109616534B - Silicon heterojunction solar cell and preparation method thereof - Google Patents
Silicon heterojunction solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN109616534B CN109616534B CN201811309523.9A CN201811309523A CN109616534B CN 109616534 B CN109616534 B CN 109616534B CN 201811309523 A CN201811309523 A CN 201811309523A CN 109616534 B CN109616534 B CN 109616534B
- Authority
- CN
- China
- Prior art keywords
- nanowire
- solar cell
- heterojunction solar
- etching
- type substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title description 6
- 239000002070 nanowire Substances 0.000 claims abstract description 137
- 238000005530 etching Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 56
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000002082 metal nanoparticle Substances 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a silicon heterojunction solar cell which sequentially comprises a back electrode, an N-type substrate, an N-nanowire array, an I-intrinsic amorphous layer, a P-transparent NiO conducting layer and an upper electrode, wherein the N-nanowire array is obtained by carrying out secondary etching on nanowire clusters formed on the basis of etching of the N-type substrate through an alkaline reagent, and comprises a plurality of nanowires which are not in contact with each other and are thick at the upper tip and the lower tip; the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction. The invention eliminates the clusters of the nanowire array by secondary etching, and effectively avoids the loss phenomenon caused by the fact that the nanowire clusters reflect a large amount of incident sunlight on the premise of ensuring enough length; and the I-intrinsic amorphous layer is used for realizing passivation treatment on the nanowire array, so that the performance of the silicon heterojunction solar cell is ensured.
Description
Technical Field
The invention relates to the technical field of batteries, in particular to a silicon heterojunction solar battery and a preparation method thereof.
Background
Due to the excellent optical and electrical properties of silicon nanowire arrays, silicon nanowire array cells have led to extensive research and a variety of silicon nanowire array solar cells have emerged. The silicon nanowire radial heterojunction cell prepared by the CVD method integrates the nanotechnology, the heterojunction technology and the thin film technology, and is considered to have a wide development prospect in the aspect of implementing high-efficiency and low-cost cells.
The silicon nanowire array has a good light trap effect, can absorb more sunlight, but the overlong nanowires collapse to cause an obvious clustering phenomenon, so that incident light of the sun is reflected and lost; the capability of the short nanowire for absorbing sunlight is relatively limited, the surface recombination is increased due to the extremely large surface area of the nanowire array, and the performance of the cell is inevitably attenuated without a proper passivation means, so that the optimization design of the structure and the shape of the silicon nanowire array is very important for improving the performance of the cell.
Disclosure of Invention
In view of the above, there is a need for an improved silicon heterojunction solar cell, which contains a silicon nanowire array with effective cluster elimination, good sunlight absorption capability, and appropriate passivation means to ensure the cell performance. The invention also aims to provide a preparation method of the silicon heterojunction solar cell.
The technical scheme provided by the invention is as follows: a silicon heterojunction solar cell sequentially comprises a back electrode, an N-type substrate, an N-nanowire array, an I-intrinsic amorphous layer, a P-transparent NiO conducting layer and an upper electrode, wherein the N-nanowire array is obtained by etching a nanowire cluster formed on the basis of etching of the N-type substrate through an alkaline reagent for the second time, and comprises a plurality of nanowires which are not in contact with each other and have thick upper tips and thick lower tips; the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction.
Further, the length of the nanowire cluster is 1.6-2.0 μm, and the diameter of the bottom of each nanowire in the nanowire cluster is 170-210 nm.
Furthermore, the length of the nanowire is 1.8-2.2 μm, the upper end of the nanowire is a spherical crown or a circular platform, the diameter of the bottom surface or the platform of the sphere is 150-170nm, and the diameter of the lower end surface of the nanowire is 170-210 nm.
Furthermore, a plurality of nanowires are in an orthogonal array, and the center-to-center distance between adjacent nanowires is 80-120 nm.
Further, the alkaline reagent comprises one or more of potassium hydroxide, sodium hydroxide and ammonium hydroxide.
Furthermore, the pH value of the prepared alkaline reagent is 14-16, the concentration is 8-12 wt%, and the etching time is 5-15 s.
Further, each nanowire is regrown through PECVD after the secondary etching, and then the length of the nanowire is 1-1.4 mu m, and the thickness difference of the upper end and the lower end is 80-120 nm.
Further, the thickness of the back electrode is 100-400 nm; the thickness of the N-type substrate is 100-400 mu m; the thickness of the I-intrinsic amorphous layer is 60-100 nm; the thickness of the P-transparent NiO conducting layer is 120-160 nm; the thickness of the upper electrode is 100-300 nm.
Furthermore, the back electrode is made of aluminum or silver; the N-type substrate is a silicon plate, and metal nano particles comprising silver or aluminum are deposited on the surface layer of the N-type substrate; the I-intrinsic amorphous layer is a germanium film or a silicon film; the upper electrode is made of silver or gold.
The invention also provides a preparation method of the silicon heterojunction solar cell, which comprises the following steps:
ultrasonically cleaning an N-type substrate in acetone, absolute ethyl alcohol and distilled water for 10-30 minutes in sequence, then placing the substrate into hydrogen peroxide, slowly pouring concentrated sulfuric acid, standing for 30 minutes, and repeatedly cleaning the substrate with distilled water for several times; then, removing an oxide layer on the surface of the N-type substrate by adopting hydrofluoric acid, and depositing a layer of metal nano-particles on the surface layer;
placing the N-type substrate into prepared etching liquid for etching to prepare a nanowire cluster, and placing the nanowire cluster into a nitric acid solution for soaking to remove metal nanoparticles in the nanowire cluster;
secondarily etching the nanowire clusters by using an alkaline reagent to form an N-nanowire array;
depositing an I-intrinsic amorphous layer, sputtering a P-transparent NiO conducting layer and a back electrode in sequence, and then coating an upper electrode to obtain the heterojunction solar cell.
Wherein the content of the first and second substances,
the heterojunction solar cell sequentially comprises a back electrode, an N-type substrate, an N-nanowire array, an I-intrinsic amorphous layer, a P-transparent NiO conducting layer and an upper electrode, wherein the N-nanowire array is obtained by performing secondary etching on nanowire clusters formed on the basis of etching of the N-type substrate through an alkaline reagent, and comprises a plurality of nanowires which are not in contact with each other and have thick upper tips and thick lower tips; the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction.
Compared with the prior art, the silicon heterojunction solar cell provided by the invention sequentially comprises a back electrode, an N-type substrate, an N-nanowire array, an I-intrinsic amorphous layer, a P-transparent NiO conducting layer and an upper electrode, wherein the N-nanowire array is obtained by performing secondary etching on nanowire clusters formed on the basis of etching of the N-type substrate through an alkaline reagent, and comprises a plurality of nanowires which are not in contact with each other and have thick upper tips and thick lower tips; the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction. The invention eliminates the clusters of the nanowire array by secondary etching, and effectively avoids the loss phenomenon caused by the fact that the nanowire clusters reflect a large amount of incident sunlight on the premise of ensuring enough length; and the I-intrinsic amorphous layer is used for realizing passivation treatment on the nanowire array, so that the performance of the silicon heterojunction solar cell is ensured.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic structural diagram of a heterojunction solar cell according to an embodiment of the invention.
Fig. 2 is a flow chart of the fabrication of the heterojunction solar cell shown in fig. 1.
Description of reference numerals:
none.
The following detailed description further illustrates embodiments of the invention in conjunction with the above-described figures.
Detailed Description
So that the manner in which the above recited objects, features and advantages of embodiments of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. In addition, the features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth to provide a thorough understanding of embodiments of the invention, and the described embodiments are merely a subset of embodiments of the invention, rather than a complete embodiment. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative effort belong to the protection scope of the embodiments of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of the present invention belong. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the invention.
Referring to fig. 1, the structure of a silicon heterojunction solar cell provided by the present invention is shown in fig. 1, and includes:
a back electrode for current transmission with a thickness of 100-400 nm; the material is metal aluminum, silver and the like;
an N-type substrate for heterojunction preparation, the thickness of which is 100-400 μm; the material is silicon; the surface layer is deposited with nano metal silver or metal aluminum particles;
an N-nanowire array is obtained by secondary etching of alkaline reagents based on nanowire clusters formed by etching an N-type substrate, and comprises a plurality of nanowires which are not in contact with each other and have thick upper tips and thick lower tips,
wherein the content of the first and second substances,
the length of the nanowire cluster generated by etching for the first time is 1.6-2.0 μm, and the diameter of the bottom of each nanowire in the nanowire cluster is 170-210 nm. In order to ensure good light trap effect of the nanowire array, the nanowire should have a certain length and diameter and a proper gap, and can be fully grown by prolonging etching time and the like;
then eliminating cluster phenomenon through secondary etching of alkaline reagent to ensure full utilization of the absorption function of the nanowire array, so that the length of the nanowire is 1-1.4 mu m, the upper end of the nanowire is a spherical crown or circular platform, the diameter of the bottom surface or the platform of the sphere is 60-80nm, and the diameter of the lower end surface of the nanowire is 80-120 nm. In a specific embodiment, the plurality of nanowires may be in an orthogonal array, and the distance between centers of adjacent nanowires is 80-120 nm.
In order to effectively control and eliminate the cluster and keep the effective length of the nanowire, the adopted alkaline reagent can be one or more of potassium hydroxide, sodium hydroxide and ammonium hydroxide; the pH value of the prepared alkaline reagent is 14-16, the concentration is 8-12 wt%, and the etching time is 5-15 s. In a specific embodiment, each nanowire can be further regrown by PECVD after the secondary etching, and then the length of the nanowire is 1-1.4 μm, the thickness difference of the upper end and the lower end is 80-120nm, and the regrown nanowire has more matched length, morphology, structure and the like, so that the battery performance is more excellent.
An I-intrinsic amorphous layer for passivating the silicon nanowire, the thickness of which is 60-100 nm; the material is amorphous silicon or germanium; the layer effectively passivates the surface of the silicon nanowire and reduces carrier recombination.
The P-transparent NiO conducting layer is used for transmitting electrons and has the thickness of 120-160 nm;
an upper electrode for current transmission, the thickness of which is 100-300 nm; the material is metal gold, silver, etc.;
wherein the content of the first and second substances,
the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction.
Example 1
The back electrode is 200nm in thickness and made of metal aluminum;
the N-type substrate is 200 microns thick, made of monocrystalline silicon and deposited with nano-silver particles on the surface;
the length of each nanowire cluster is 1.8 mu m, and the diameter of the bottom of each nanowire in each nanowire cluster is 190 nm;
performing secondary etching on the substrate for 10s by using potassium hydroxide with the concentration of 10 wt% and the pH of 15 to obtain an N-nanowire array, wherein the length of each nanowire is 1 mu m, and the diameter of the lower end face is 190nm，The upper end is in a spherical crown shape, the diameter of the bottom surface of the sphere is 170nm, and the distance between adjacent nanowires is 100nm (between the lower end surfaces or roots);
the I-intrinsic amorphous layer is 70nm thick and made of a germanium film;
a P-transparent NiO conducting layer with the thickness of 140 nm;
the upper electrode is 120nm thick and made of metal silver.
Example 2
The back electrode is 300nm in thickness and made of metal silver;
the N-type substrate is 300 mu m thick, is made of monocrystalline silicon and is deposited with nano aluminum particles on the surface layer;
the length of each nanowire cluster is 2.0 mu m, and the diameter of the bottom of each nanowire in each nanowire cluster is 205 nm;
the adopted concentration is 10 wt%,Sodium hydroxide with pH of 15 is etched for 15s for the second time to obtain N-nanowire array, wherein the length of each nanowire is 1 μm, and the diameter of the lower end face is 200nm，The upper end is in a spherical crown shape, the diameter of the bottom surface of the sphere is 170nm, and the distance between adjacent nanowires is 110nm (between the lower end surfaces or roots);
the I-intrinsic amorphous layer is 90nm thick and made of a silicon thin film;
a P-transparent NiO conducting layer with the thickness of 150 nm;
the upper electrode is 200nm thick and made of metal silver.
Example 3
The back electrode is 200nm in thickness and made of metal aluminum;
the N-type substrate is 200 microns thick, made of monocrystalline silicon and deposited with nano silver particles on the surface layer;
the length of each nanowire cluster is 1.8 mu m, and the diameter of the bottom of each nanowire in each nanowire cluster is 190 nm;
performing secondary etching on the substrate by using 10 wt% potassium hydroxide with the pH of 15 for 15s, and continuously performing PECVD regrowth to obtain an N-nanowire array, wherein the length of each nanowire is 1.2 mu m, and the diameter of the lower end face is 190nm，The upper end is in a spherical crown shape, the diameter of the bottom surface of the sphere is 110nm, and the distance between adjacent nanowires is 100nm (between the lower end surfaces or roots);
the I-intrinsic amorphous layer is 80nm thick and made of a germanium film;
a P-transparent NiO conducting layer with the thickness of 130 nm;
the upper electrode is 110nm thick and made of metal gold.
Comparative example 1
The back electrode is 200nm in thickness and made of metal aluminum;
an N-type substrate having a thickness of 200 μm and made of single crystal silicon;
the length of each nanowire cluster is 1.8 mu m, and the diameter of the bottom of each nanowire in each nanowire cluster is 190 nm;
the I-intrinsic amorphous layer is 70nm thick and made of amorphous silicon;
a P-transparent NiO conducting layer with the thickness of 140 nm;
the upper electrode is 120nm thick and made of metal silver.
Unlike example 1, comparative example 1 did not perform the secondary etching process on the nanowire cluster.
Comparative example 2
The back electrode is 200nm in thickness and made of metal aluminum;
an N-type substrate having a thickness of 200 μm and made of single crystal silicon;
the I-intrinsic amorphous layer is 70nm thick and made of amorphous silicon;
a P-transparent NiO conducting layer with the thickness of 140 nm;
the upper electrode is 120nm thick and made of metal silver.
Unlike example 1, comparative example 2 did not perform an etching process on the N-type substrate, and a planar heterojunction cell was obtained.
Efficiency performance tests were performed on the solar cells obtained in the three examples and 2 comparative examples, respectively, in which the cell efficiency obtained in example 1 was 2.48%, the cell efficiency obtained in example 2 was 2.10%, the cell efficiency obtained in example 3 was 2.23%, the cell efficiency obtained in comparative example 1 was 1.86%, and the cell efficiency obtained in comparative example 2 was 1.58%. It can be seen that the silicon heterojunction solar cell of the present invention has better cell efficiency.
By comparing the batteries obtained in example 1 and comparative example 1, it was found that the short-circuit current density of the batteries was from 13.23mA/cm2Reduced to 10.61mA/cm2Therefore, the secondary etching treatment of the nanowire cluster can more effectively passivate the nanowire by the I-type layer, and the current density is improved.
By comparing the batteries obtained in example 1 and comparative example 2, it was found that the short-circuit current density of the batteries was from 13.23mA/cm2Reduced to 9.373mA/cm2It can be seen that the bulk heterojunction cell employing the nanowire structure has a larger depletion region, and thus can achieve a higher current density, relative to the planar heterojunction cell.
In other embodiments, the length of the nanowire cluster is not limited to 1.8 μm, and may be any value between 1.6 μm and 1.8 μm or between 1.8 μm and 2.0 μm, including 1.6 μm and 2.0 μm. In other embodiments, the diameter of the bottom of each nanowire can be controlled to any value in the range of 170-210nm according to the degree of growth of the nanowire cluster. In other embodiments, the length of the nanowire may be any value between 1.8 μm and 2.2 μm, and is not limited to the present embodiment. In other embodiments, the center-to-center spacing of adjacent nanowires is between 80 and 120 nm. In other embodiments, the alkaline agent may be ammonium hydroxide or a combination of potassium hydroxide, sodium hydroxide, ammonium hydroxide. In other embodiments, the alkaline agent is formulated at a pH of 14 to 16, a concentration of 8 to 12 wt%, and an etching time of 5 to 15 seconds, specifically adjusted according to predetermined performance requirements. In other embodiments, each of the nanowires may be regrown by PECVD after the second etching, and then have a length of 1-1.4 μm and a difference in thickness between the upper and lower ends of 80-120 nm. In other embodiments, the layers of the battery can be made with the following structure: the thickness of the back electrode is 100-400 nm; the thickness of the N-type substrate is 100-400 mu m; the thickness of the I-intrinsic amorphous layer is 60-100 nm; the thickness of the P-transparent NiO conducting layer is 120-160 nm; the thickness of the upper electrode is 100-300 nm.
Referring to fig. 2, the process of fabricating the heterojunction solar cell of the present invention is as follows:
step 1: ultrasonically cleaning an N-type substrate in acetone, absolute ethyl alcohol and distilled water for 10-30 minutes in sequence, then placing the substrate into hydrogen peroxide, slowly pouring concentrated sulfuric acid, standing for 30 minutes, and repeatedly cleaning the substrate with distilled water for several times; then, removing an oxide layer on the surface of the N-type substrate by adopting hydrofluoric acid, and depositing a layer of metal nano-particles on the surface layer;
step 2: placing the N-type substrate into prepared etching liquid for etching to prepare a nanowire cluster, and placing the nanowire cluster into a nitric acid solution for soaking to remove metal nanoparticles in the nanowire cluster;
and step 3: secondarily etching the nanowire clusters by using an alkaline reagent to form an N-nanowire array;
and 4, step 4: depositing an I-intrinsic amorphous layer, sputtering a P-transparent NiO conducting layer and a back electrode in sequence, and then coating an upper electrode to obtain the heterojunction solar cell.
In other embodiments, the time in step 1 may be longer or shorter, and only the cleaning or impurity removal reaction is needed.
In conclusion, the nanowire array in the heterojunction solar cell is in an upper-pointed lower-thick shape, no agglomeration phenomenon is caused by etching with an alkaline reagent, the nanowire gap is increased, an I-intrinsic amorphous layer is easy to deposit and cover on the whole nanowire, the surface of the nanowire is effectively passivated and compounded by the deposition layer, a lower optical reflection value is obtained, and the cell efficiency is effectively improved.
Although the embodiments of the present invention have been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the embodiments of the present invention.
Claims (10)
1. A silicon heterojunction solar cell, characterized in that: the cell sequentially comprises a back electrode, an N-type substrate, an N-nanowire array, an I-intrinsic amorphous layer, a P-transparent NiO conducting layer and an upper electrode, wherein the N-nanowire array is obtained by etching a nanowire cluster with the length of 1.6-2.0 mu m based on the etching of the N-type substrate through an alkaline reagent for the second time, the nanowire cluster comprises a plurality of nanowires which are not in contact with each other and thick at the upper tip and the lower tip, the length of the nanowire cluster is increased through the second etching, the length of the obtained nanowire cluster is 1.8-2.2 mu m, and the upper end of the nanowire cluster is a spherical crown or circular platform; the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction.
2. The silicon heterojunction solar cell of claim 1, wherein: the diameter of the bottom of each nanowire in the nanowire cluster is 170-210 nm.
3. The silicon heterojunction solar cell of claim 1, wherein: the diameter of the ball bottom surface or the platform at the upper end of the nanowire is 150-170nm, and the diameter of the lower end surface of the nanowire is 170-210 nm.
4. The silicon heterojunction solar cell of claim 1, wherein: the nanowires are in an orthogonal array, and the center-to-center distance between adjacent nanowires is 80-120 nm.
5. The silicon heterojunction solar cell of claim 1, wherein: the alkaline reagent comprises one or more of potassium hydroxide, sodium hydroxide and ammonium hydroxide.
6. The silicon heterojunction solar cell of claim 1, wherein: the pH value of the prepared alkaline reagent is 14-16, the concentration is 8-12 wt%, and the etching time is 5-15 s.
7. The silicon heterojunction solar cell of claim 1, wherein: and after secondary etching, each nanowire is regrown through PECVD, and then the length of the nanowire is shortened to 1-1.4 mu m, and the thickness difference of the upper end and the lower end is 80-120 nm.
8. The silicon heterojunction solar cell of claim 1, wherein: the thickness of the back electrode is 100-400 nm; the thickness of the N-type substrate is 100-400 mu m; the thickness of the I-intrinsic amorphous layer is 60-100 nm; the thickness of the P-transparent NiO conducting layer is 120-160 nm; the thickness of the upper electrode is 100-300 nm.
9. The silicon heterojunction solar cell of claim 1, wherein: the back electrode is made of aluminum or silver; the N-type substrate is a silicon plate, and metal nano particles comprising silver or aluminum are deposited on the surface layer of the N-type substrate; the I-intrinsic amorphous layer is a germanium film or a silicon film; the upper electrode is made of silver or gold.
10. The method for manufacturing a silicon heterojunction solar cell according to any one of claims 1 to 9, comprising the steps of:
ultrasonically cleaning an N-type substrate in acetone, absolute ethyl alcohol and distilled water for 10-30 minutes in sequence, then placing the substrate into hydrogen peroxide, slowly pouring concentrated sulfuric acid, standing for 30 minutes, and repeatedly cleaning the substrate with distilled water for several times; then, removing an oxide layer on the surface of the N-type substrate by adopting hydrofluoric acid, and depositing a layer of metal nano-particles on the surface layer;
placing the N-type substrate into prepared etching liquid for etching to prepare a nanowire cluster with the length of 1.6-2.0 microns, and soaking the nanowire cluster into nitric acid solution to remove metal nanoparticles in the nanowire cluster;
secondarily etching the nanowire cluster by using an alkaline reagent to form an N-nanowire array, wherein the length of the nanowire cluster is increased by secondary etching, the length of the obtained nanowire is 1.8-2.2 mu m, and the upper end of the nanowire cluster is a spherical crown or a circular platform;
depositing an I-intrinsic amorphous layer, sputtering a P-transparent NiO conducting layer and a back electrode in sequence, and then coating an upper electrode to obtain the heterojunction solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811309523.9A CN109616534B (en) | 2018-11-05 | 2018-11-05 | Silicon heterojunction solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811309523.9A CN109616534B (en) | 2018-11-05 | 2018-11-05 | Silicon heterojunction solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109616534A CN109616534A (en) | 2019-04-12 |
| CN109616534B true CN109616534B (en) | 2020-12-18 |
Family
ID=66002581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811309523.9A Expired - Fee Related CN109616534B (en) | 2018-11-05 | 2018-11-05 | Silicon heterojunction solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109616534B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9059344B2 (en) * | 2009-08-24 | 2015-06-16 | Shih-Ping Bob Wang | Nanowire-based photovoltaic energy conversion devices and related fabrication methods |
| CN103779448B (en) * | 2014-02-26 | 2016-02-17 | 中国科学院大学 | The preparation method of the radial heterojunction solar cell of a kind of silicon nanowires |
| CN104409322B (en) * | 2014-11-05 | 2017-10-27 | 昆明理工大学 | A kind of preparation method of sub-wavelength silicon nanowire array |
-
2018
- 2018-11-05 CN CN201811309523.9A patent/CN109616534B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN109616534A (en) | 2019-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8906733B2 (en) | Methods for forming nanostructures and photovoltaic cells implementing same | |
| CN105070792B (en) | A kind of preparation method of the polycrystalline solar cell based on solwution method | |
| CN102254963A (en) | Graphene/silicon pillar array Schottky junction photovoltaic cell and manufacturing method thereof | |
| US20120222731A1 (en) | Heterojunction Solar Cell Having Amorphous Silicon Layer | |
| CN102751371B (en) | Solar thin film battery and manufacturing method thereof | |
| CN103066160B (en) | A kind of method of solar cell silicon wafer Surface Creation porous silicon | |
| CN103413838A (en) | Crystalline silicon solar cell and preparation method thereof | |
| CN103489929A (en) | Light trapping structure on silicon substrate surface, preparation method and application thereof | |
| CN109473487B (en) | Crystalline silicon solar cell based on composite light trapping structure and preparation method thereof | |
| CN107104165A (en) | One kind is based on graphene silicon inverted pyramid array Schottky photovoltaic cell manufacture method | |
| JP6423373B2 (en) | Photoelectric conversion element and solar cell module including the same | |
| CN108987532A (en) | A kind of preparation method of the N-type tunnel oxide passivating solar battery based on light scattering structure | |
| KR101164326B1 (en) | Silicon thin film solar cells using periodic or random metal nanoparticle layer and fabrication method thereof | |
| CN104716209A (en) | Solar cell based on silicon substrate nanowire and preparing method thereof | |
| CN204311157U (en) | For the silicon chip of solar cell | |
| CN105576054A (en) | Nanowire intermediate band solar cell structure based on butterfly-shaped plasmon antenna enhancement | |
| CN109616534B (en) | Silicon heterojunction solar cell and preparation method thereof | |
| CN209104162U (en) | Crystal-silicon solar cell based on compound light trapping structure | |
| CN107863410A (en) | A kind of preparation method of solar battery | |
| CN101055899A (en) | Crystal silicon solar battery with multi-hole silicon layer structure | |
| CN103022247B (en) | The method of silicon nanometer line solar battery blemish layer is removed in a kind of oxide etch | |
| CN215771167U (en) | Solar cell and photovoltaic module | |
| CN102544184B (en) | Personal identification number (PIN) solar battery with transverse structure and preparation method thereof | |
| CN101814541A (en) | Silicon solar cell with metal nanowires being distributed on surface | |
| CN106611803B (en) | A kind of solar battery group of solar battery sheet, preparation method and its composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201218 |