CN109616420A - A kind of power modules processing method and power modules - Google Patents
A kind of power modules processing method and power modules Download PDFInfo
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- CN109616420A CN109616420A CN201811388375.4A CN201811388375A CN109616420A CN 109616420 A CN109616420 A CN 109616420A CN 201811388375 A CN201811388375 A CN 201811388375A CN 109616420 A CN109616420 A CN 109616420A
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- 238000003672 processing method Methods 0.000 title claims abstract description 45
- 238000003466 welding Methods 0.000 claims abstract description 171
- 239000000758 substrate Substances 0.000 claims description 102
- 239000000919 ceramic Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 11
- 230000008018 melting Effects 0.000 abstract description 8
- 238000002844 melting Methods 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 101000881405 Chlamydomonas reinhardtii Dynein, 78 kDa intermediate chain, flagellar outer arm Proteins 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- RYGMFSIKBFXOCR-IGMARMGPSA-N copper-64 Chemical compound [64Cu] RYGMFSIKBFXOCR-IGMARMGPSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4839—Assembly of a flat lead with an insulating support, e.g. for TAB
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The present invention discloses a kind of power modules processing method, its welding pin technique is carried out using resistance welding technology: using welding pin by the way of resistance welding or laser welding engagement in this programme, without passing through scolding tin or other intermediate connecting materials, the melting bonding operation between identical material may be implemented, melting between identical material engages to be formed close to no thermal resistance and phase change section, product resistive properties are good, form most short transmission path and possess lower parasitic inductance and resistance.The resistance welding is that parallel welding indirectly is carried out by parallel indirect resistance welding equipment, or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；Meanwhile the power modules being process using the above method are also provided in the present invention.
Description
Technical field
Semiconductor field of the present invention more particularly to a kind of power modules processing method and use this method process the function to be formed
Rate mould group.
Background technique
IPM (IntelligentPowerModule), i.e. intelligent power module, not only device for power switching and driving electricity
Road integrates.But also it has been internally integrated overvoltage, the fault detection circuits such as overcurrent and overheat, and signal can be will test
It is sent to CPU.It is made of the gate drive circuit and fast protection circuit of the tube core of high-speed low-power-consumption and optimization.Even if occurring
Load accident situation or improper use, it is also ensured that IPM itself is not damaged.IPM generally uses IGBT and MOSFET as function
Rate switch element is internally integrated the integrated morphology of current sensor and driving circuit.IPM is with its high reliability, win easy to use
Increasing market is obtained, is particularly suitable for the frequency converter and various inverters of driving motor, is frequency control, metallurgical machine
Tool, electric propulsion, servo-drive, the ideal power electronic devices of one kind of frequency-conversion domestic electric appliances.
The production technology of intelligent power module plug-in unit product is complicated in the prior art, sequence of process steps solidification, so that producing
It is not ideal enough that product produce inflexible and product quality.
Summary of the invention
The purpose of the embodiment of the present invention is: providing a kind of power modules processing method, is able to solve in the prior art
Existing above-mentioned technical problem.
In order to achieve the above object, the invention adopts the following technical scheme:
A kind of power modules processing method is provided, comprising the following steps:
Step S1, substrate is provided；
Step S2: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S3: welding pin directly engages base plate line and pin by the way of resistance welding；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Wherein the step S3 can be carried out between the step S2 and the step S4, or, the step S3 is in described
It is carried out before step S2.
As a kind of optimal technical scheme of the power modules processing method, the substrate is insulating metal substrate.
As a kind of optimal technical scheme of the power modules processing method, the pin is lead frame, PCB
Or driving end lead frame, the engagement base plate line and pin engage for insulating metal substrate with lead frame, insulated metal base
Plate is engaged with PCB or insulating metal substrate is engaged with driving end lead frame.
As a kind of optimal technical scheme of the power modules processing method, the substrate is ceramic copper-clad plate.
As a kind of optimal technical scheme of the power modules processing method, the pin is lead frame, PCB
Or driving end lead frame, the engagement base plate line and pin engage for ceramic copper-clad plate with lead frame, ceramic copper-clad plate in
PCB engagement or ceramic copper-clad plate are in driving end lead frame engagement.
As a kind of optimal technical scheme of the power modules processing method, the resistance welding is by between parallel
Connecting resistance welding equipment carries out parallel welding indirectly；
The parallel indirect resistance welding equipment includes the first welding tip electrode and the second plumb joint electricity being parallel to each other
Pole, the first welding tip electrode is corresponding with the substrate, and the second electrode connector is corresponding with the pin；
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
The resistance welding equipment arranged side by side includes the first welding tip electrode and the second welding tip electrode, first welding
Tip electrode and the second electrode connector are corresponding with the pin.
As a kind of optimal technical scheme of the power modules processing method, the insulating metal substrate successively includes
Metal substrate layer, insulating layer and substrate circuit layer, the electronic component are arranged on the substrate circuit layer.
As a kind of optimal technical scheme of the power modules processing method, the ceramic copper-clad plate successively includes base
Back layers of copper, sheet ceramic layer and substrate circuit layer, the electronic component setting is on waiting substrate circuit layer.
On the other hand, a kind of power modules processing method is provided, comprising the following steps:
Step S1, substrate is provided；
Step S2: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S3: welding pin directly engages base plate line and pin by the way of laser welding；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Wherein the step S3 can be carried out between the step S2 and the step S4, or, the step S3 is in described
It is carried out before step S2.
On the other hand, a kind of power modules are provided, uses power modules processing method as described above to carry out pin and connects
It closes.
The invention has the benefit that in this programme by the way of resistance welding welding pin, without by scolding tin or
The melting bonding operation between identical material may be implemented in other intermediate connecting materials, and the melting between identical material engages shape
At close to no thermal resistance and phase change section, product resistive properties are good, form most short transmission path and possess lower parasitic inductance and electricity
Resistance.Resistance welding equipment is at low cost, can be in large-scale application.
Detailed description of the invention
The present invention will be further described in detail below based on the drawings and embodiments.
Fig. 1 is power modules processing method flow chart described in the embodiment of the present invention one.
Fig. 2 is power modules processing method flow chart described in the embodiment of the present invention two.
Fig. 3 is power modules structure sectional view described in the embodiment of the present invention three.
Fig. 4 is power modules structure sectional view described in the embodiment of the present invention four.
Fig. 5 is power modules structure sectional view described in the embodiment of the present invention five.
Fig. 6 is power modules structure sectional view described in the embodiment of the present invention six.
Fig. 7 is power modules structure sectional view described in the embodiment of the present invention seven.
Fig. 8 is power modules structure sectional view described in the embodiment of the present invention eight.
Fig. 9 is parallel welded condition schematic diagram indirectly described in the embodiment of the present invention.
Figure 10 is block form welded condition schematic diagram described in the embodiment of the present invention.
In Fig. 3:
31, pin；32, substrate circuit layer；33, insulating layer；34, metal substrate layer；35, electronic component；36, lead；
37, IC is driven；
In Fig. 4:
41, pin；42, substrate circuit layer；43, insulating layer；44, metal substrate layer；45, electronic component；46, lead；
47, connecting wire frame；48, IC is driven；49,PCB；410, PCB line pattern；
In Fig. 5:
51, pin；52, substrate circuit layer；53, insulating layer；54, metal substrate layer；55, electronic component；56, lead；
57, connecting wire frame；58, IC is driven；
In Fig. 6:
61, pin；62, substrate circuit layer；63, sheet ceramic layer；64, substrate back layers of copper；65, electronic component；66,
Lead；67, IC is driven；
In Fig. 7:
71, pin；72, substrate circuit layer；73, sheet ceramic layer；74, substrate back layers of copper；75, electronic component；76,
Lead；77, connecting wire frame；78, IC is driven；79,PCB；710, PCB line pattern；
In Fig. 8:
81, pin；82, substrate circuit layer；83, sheet ceramic layer；84, substrate back layers of copper；85, electronic component；86,
Lead；87, connecting wire frame；88, IC is driven；
In Fig. 9:
10, driving power；11, driving device；12, mould group is welded；131, the first welding tip electrode；132, the second plumb joint
Electrode；14, substrate；
In Figure 10:
20, driving power；21, driving device；22, mould group is welded；231, the first welding tip electrode；232, the second plumb joint
Electrode；24, substrate.
Specific embodiment
To keep the technical problems solved, the adopted technical scheme and the technical effect achieved by the invention clearer, below
It will the technical scheme of the embodiment of the invention will be described in further detail in conjunction with attached drawing, it is clear that described embodiment is only
It is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art exist
Every other embodiment obtained under the premise of creative work is not made, shall fall within the protection scope of the present invention.
In the description of the present invention unless specifically defined or limited otherwise, term " connected " should make broad sense ", " fixation "
It shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or is integral；It can be mechanical connection,
It is also possible to be electrically connected；It can be directly connected, can also can be inside two elements indirectly connected through an intermediary
The interaction relationship of connection or two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Embodiment one:
As shown in Figure 1, the present embodiment provides a kind of power modules processing methods, comprising the following steps:
Step S1, substrate is provided；
Step S2: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S3: welding pin directly engages base plate line and pin by the way of resistance welding；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Core, routing carry out before the step welding pin in step described in the present embodiment.
In this programme by the way of electric resistance welding engagement welding pin, without by scolding tin or other intermediate connecting materials,
The melting bonding operation between identical material may be implemented, the melting between identical material engages to be formed close to no thermal resistance and phase transformation
Change section, product resistive properties are good, form most short transmission path and possess lower parasitic inductance and resistance.Resistance welding equipment cost
It is low, it can be in large-scale application.
Welding pin is placed on and carries out that welding, the used equipment of bonding process can be reduced after upper core, routing processing step
Size, since the substrate draw-foot after welding pin is to external diffusion, occupied space is relative to unwelded pin shape
Substrate under state will increase very greatly, for example, the diffusion is embodied on expanding area when pin does not carry out bending forming, work as pin
After carrying out bending forming, which is embodied in area and height simultaneously, and it is unfavorable that above-mentioned diffusion can bring equipment volume
It influences, so that equipment volume increases.
It is carried out after upper core, routing using above-mentioned welding pin, welding pin step is not yet carried out when due to upper core, routing
Suddenly, thus spatial dimension shared by substrate be base main body size, thus can effectively control the ruler of core, routing device
It is very little.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
The engagement of row pin.
Embodiment two:
As shown in Fig. 2, the present embodiment provides a kind of power modules processing methods, comprising the following steps:
Step S1, substrate is provided；
Step S2: welding pin directly engages base plate line and pin by the way of resistance welding；
Step S3: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Since welding pin uses resistance welding, so that upper core described in power modules processing method of the present invention,
Routing can carry out after welding pin.
Its technique is followed successively by welding pin-and goes up core, routing-encapsulation, and above-mentioned steps directly carry out after the completion of upper core, routing
Packaging technology can reduce the time interval between core, routing technique and packaging technology, after the completion of upper core, routing as early as possible into
Row encapsulation can reduce surface cracking and oxidation, reduce the lamination problem of packaging plastic.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
The engagement of row pin.
Embodiment three:
Power modules processing method described in the present embodiment is identical as the processing step in embodiment one or embodiment two,
It is specifically specifically introduced the type of substrate, and substrate described in the present embodiment is insulating metal substrate.
As shown in Fig. 3,9,10, the pin 31 is lead frame, and the engagement base plate line and pin 31 are insulation gold
Belong to substrate to engage with lead frame.The insulating metal substrate successively includes metal substrate layer 34, insulating layer 33 and plate line
Road floor 32, the electronic component 35 are arranged on the substrate circuit layer 32.Hot device in the present embodiment in electronic component
Part and driving IC37 are co-located on insulating metal substrate, and the electronic component 35 is arranged in the substrate circuit layer 32
On, it is electrically connected between electronic component 35 by lead 36.
Specifically, resistance welding described in the present embodiment is to carry out parallel weldering indirectly by parallel indirect resistance welding equipment
It connects；
As shown in figure 9, the parallel indirect resistance welding equipment includes driving power 10, driving device 11, welding mould group
12 and be parallel to each other first welding tip electrode 131 and second welding tip electrode 132, it is described first welding tip electrode 131
Corresponding with the substrate 14, the second electrode connector 132 is corresponding with the pin.
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
As shown in Figure 10, the resistance welding equipment arranged side by side include driving power 20, driving device 21, welding mould group 22 with
And first welding tip electrode 231 and the second welding tip electrode 232, the first welding tip electrode 231 and second electrode
Connector 232 is corresponding with the pin.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
Row pin 31 engages.
Example IV:
As shown in Fig. 4,9,10, the difference of power modules processing method described in the present embodiment and embodiment three is described
Pin 41 includes individual pin and the pin being arranged on PCB49, and the engagement base plate line and pin 41 are insulated metal
Substrate is engaged by connecting wire frame 47 with PCB49 and individual pin is directly engaged with insulating metal substrate, hot in this programme
Device and driving IC48 are separately positioned.The insulating metal substrate successively includes metal substrate layer 44, insulating layer 43 and substrate
Line layer 42, the electronic component 45 are arranged on the substrate circuit layer 42, pass through lead 46 between electronic component 45
Electrical connection.PCB line pattern 410 is provided on the PCB49, resistance welding connection function position described in this programme is will
The substrate circuit layer 42 is welded to connect with PCB line pattern 410 by connecting wire frame 47.
Specifically, resistance welding described in the present embodiment is to carry out parallel weldering indirectly by parallel indirect resistance welding equipment
It connects；
As shown in figure 9, the parallel indirect resistance welding equipment includes driving power 10, driving device 11, welding mould group
12 and be parallel to each other first welding tip electrode 131 and second welding tip electrode 132, it is described first welding tip electrode 131
Corresponding with the substrate 14, the second electrode connector 132 is corresponding with the pin.
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
As shown in Figure 10, the resistance welding equipment arranged side by side include driving power 20, driving device 21, welding mould group 22 with
And first welding tip electrode 231 and the second welding tip electrode 232, the first welding tip electrode 231 and second electrode
Connector 232 is corresponding with the pin.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
Row pin 41 engages.
Embodiment five:
As shown in Fig. 5,9,10, the difference of power modules processing method described in the present embodiment and embodiment three is described
Pin 51 includes individual pin and the pin driven on the lead frame of end is arranged in, and the engagement base plate line and pin 51 are exhausted
Edge metal substrate is engaged with the driving end lead frame for being provided with pin and insulating metal substrate is engaged in the individual pin, this
It is in scheme that thermal device and driving IC58 is separately positioned.The insulating metal substrate successively includes metal substrate layer 54, insulating layer
53 and substrate circuit layer 52, the electronic component 55 is arranged on the substrate circuit layer 52, the substrate circuit layer 52
On electronic component 55 between be electrically connected by lead 56, the driving IC58 setting is on driving lead frame, the driving
Lead frame and the substrate circuit layer 52 are welded to connect by connecting wire frame 57, and welding manner between the two uses this programme
The resistance welding.
Specifically, resistance welding described in the present embodiment is to carry out parallel weldering indirectly by parallel indirect resistance welding equipment
It connects；
As shown in figure 9, the parallel indirect resistance welding equipment includes driving power 10, driving device 11, welding mould group
12 and be parallel to each other first welding tip electrode 131 and second welding tip electrode 132, it is described first welding tip electrode 131
Corresponding with the substrate 14, the second electrode connector 132 is corresponding with the pin.
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
As shown in Figure 10, the resistance welding equipment arranged side by side include driving power 20, driving device 21, welding mould group 22 with
And first welding tip electrode 231 and the second welding tip electrode 232, the first welding tip electrode 231 and second electrode
Connector 232 is corresponding with the pin.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
Row pin 51 engages.
Embodiment six:
Power modules processing method described in the present embodiment is identical as the processing step in embodiment one or embodiment two,
It is specifically specifically introduced the type of substrate, and substrate described in the present embodiment is ceramic copper-clad plate.
As shown in Fig. 6,9,10, the pin 61 is lead frame, and the engagement base plate line is covered with pin 61 for ceramics
Copper sheet is engaged with lead frame.The ceramic copper-clad plate successively includes substrate back layers of copper 64, sheet ceramic layer 63 and substrate
Line layer 62, the setting of electronic component 65 is on waiting substrate circuit layer 62.In the present embodiment in electronic component 65
Thermal device and driving IC67 are co-located on ceramic copper-clad plate, are electrically connected between electronic component 65 by lead 66.
Specifically, resistance welding described in the present embodiment is to carry out parallel weldering indirectly by parallel indirect resistance welding equipment
It connects；
As shown in figure 9, the parallel indirect resistance welding equipment includes driving power 10, driving device 11, welding mould group
12 and be parallel to each other first welding tip electrode 131 and second welding tip electrode 132, it is described first welding tip electrode 131
Corresponding with the substrate 14, the second electrode connector 132 is corresponding with the pin.
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
As shown in Figure 10, the resistance welding equipment arranged side by side include driving power 20, driving device 21, welding mould group 22 with
And first welding tip electrode 231 and the second welding tip electrode 232, the first welding tip electrode 231 and second electrode
Connector 232 is corresponding with the pin.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
Row pin 61 engages.
Embodiment seven:
As shown in Fig. 7,9,10, the difference of power modules processing method described in the present embodiment and embodiment six is described
Pin 71 includes individual pin and the pin being arranged on PCB79, and the engagement base plate line and pin 71 are ceramic copper-clad
Plate is engaged with PCB by connecting wire frame 77 and pin 71 is engaged with the substrate circuit layer 72 on ceramic copper-clad plate, wherein electricity
Thermal device and driving IC78 in sub- component 75 is separately positioned, and driving IC78 is arranged on PCB79.The ceramic copper-clad plate according to
Secondary includes substrate back layers of copper 74, sheet ceramic layer 73 and substrate circuit layer 72, and the electronic component 75 is arranged described
On substrate circuit layer 72, it is electrically connected between the electronic component 75 by lead 76, PCB route is provided on the PCB79
Figure 710, resistance welding connection function position described in this programme are by the substrate circuit layer 72 and the PCB line pattern
710 are welded to connect by connecting wire frame 77.
Specifically, resistance welding described in the present embodiment is to carry out parallel weldering indirectly by parallel indirect resistance welding equipment
It connects；
As shown in figure 9, the parallel indirect resistance welding equipment includes driving power 10, driving device 11, welding mould group
12 and be parallel to each other first welding tip electrode 131 and second welding tip electrode 132, it is described first welding tip electrode 131
Corresponding with the substrate 14, the second electrode connector 132 is corresponding with the pin.
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
As shown in Figure 10, the resistance welding equipment arranged side by side include driving power 20, driving device 21, welding mould group 22 with
And first welding tip electrode 231 and the second welding tip electrode 232, the first welding tip electrode 231 and second electrode
Connector 232 is corresponding with the pin.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
Row pin 71 engages.
Embodiment eight:
As shown in Figure 8,9, 10, the difference of power modules processing method described in the present embodiment and embodiment six is described
Pin 81 includes individual pin and the pin driven on the lead frame of end is arranged in, and the engagement base plate line and pin 81 are pottery
Porcelain copper-clad plate be provided with the driving end lead frame of pin and engage by connecting wire frame 87 and ceramic copper-clad plate and described only
Vertical pin engages, and the thermal device and driving IC88 in this programme in electronic component 85 are separately positioned, and driving IC88 setting is being driven
On the lead frame of moved end, it is electrically connected between the electronic component 85 that is arranged on ceramic copper-clad plate by lead 86.The ceramics cover
Copper sheet successively includes substrate back layers of copper 84, sheet ceramic layer 83 and substrate circuit layer 82, and the electronic component 85 is arranged
On the substrate circuit layer 82.
Specifically, resistance welding described in the present embodiment is to carry out parallel weldering indirectly by parallel indirect resistance welding equipment
It connects；
As shown in figure 9, the parallel indirect resistance welding equipment includes driving power 10, driving device 11, welding mould group
12 and be parallel to each other first welding tip electrode 131 and second welding tip electrode 132, it is described first welding tip electrode 131
Corresponding with the substrate 14, the second electrode connector 132 is corresponding with the pin.
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
As shown in Figure 10, the resistance welding equipment arranged side by side include driving power 20, driving device 21, welding mould group 22 with
And first welding tip electrode 231 and the second welding tip electrode 232, the first welding tip electrode 231 and second electrode
Connector 232 is corresponding with the pin.
Meanwhile a kind of power modules are also provided in the present embodiment, use power modules processing method as described above into
Row pin 81 engages.
Embodiment nine:
A kind of power modules processing method, which comprises the following steps:
Step S1, substrate is provided；
Step S2: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S3: welding pin directly engages base plate line and pin by the way of laser welding；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Wherein the step S3 can be carried out between the step S2 and the step S4, or, the step S3 is in described
It is carried out before step S2.
In this programme by the way of laser welding engagement welding pin, without by scolding tin or other intermediate connect materials
Material, may be implemented the melting bonding operation between identical material, the melting between identical material engage to be formed close to no thermal resistance and
Phase change section, product resistive properties are good, form most short transmission path and possess lower parasitic inductance and resistance.Resistance welding equipment
It is at low cost, it can be in large-scale application.
Welding pin is placed on and carries out that welding, the used equipment of bonding process can be reduced after upper core, routing processing step
Size, since the substrate draw-foot after welding pin is to external diffusion, occupied space is relative to unwelded pin shape
Substrate under state will increase very greatly, for example, the diffusion is embodied on expanding area when pin does not carry out bending forming, work as pin
After carrying out bending forming, which is embodied in area and height simultaneously, and it is unfavorable that above-mentioned diffusion can bring equipment volume
It influences, so that equipment rail volume increases.
It is carried out after upper core, routing using above-mentioned welding pin, welding pin step is not yet carried out when due to upper core, routing
Suddenly, thus spatial dimension shared by substrate be base main body size, thus can effectively control the ruler of core, routing device
It is very little.
In the description of this article, it is to be understood that term " on ", "lower", " right side ", etc. orientation or positional relationships be based on
Orientation or positional relationship shown in the drawings is merely for convenience of description and simplification and operates, rather than the dress of indication or suggestion meaning
It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to limit of the invention
System.In addition, term " first ", " second ", are only used to distinguish between description, have no special meaning.
In the description of this specification, the description of reference term " embodiment ", " example " etc. means to combine the embodiment
Or example particular features, structures, materials, or characteristics described are included at least one embodiment or example of the invention.?
In this specification, schematic expression of the above terms be may not refer to the same embodiment or example.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the embodiments can also be appropriately combined, and forming those skilled in the art can
With the other embodiments of understanding.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (10)
1. a kind of power modules processing method, which comprises the following steps:
Step S1, substrate is provided；
Step S2: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S3: welding pin directly engages base plate line and pin by the way of resistance welding；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Wherein the step S3 can be carried out between the step S2 and the step S4, or, the step S3 is in the step
It is carried out before S2.
2. power modules processing method according to claim 1, which is characterized in that the substrate is insulating metal substrate.
3. power modules processing method according to claim 2, which is characterized in that the pin be lead frame, PCB or
Drive end lead frame, the engagement base plate line and pin engage for insulating metal substrate with lead frame, insulating metal substrate
It is engaged with PCB or insulating metal substrate is engaged with driving end lead frame.
4. power modules processing method according to claim 1, which is characterized in that the substrate is ceramic copper-clad plate.
5. power modules processing method according to claim 4, which is characterized in that the pin be lead frame, PCB or
End lead frame is driven, the engagement base plate line engages for ceramic copper-clad plate with lead frame with pin, ceramic copper-clad plate is in PCB
Engagement or ceramic copper-clad plate are in driving end lead frame engagement.
6. power modules processing method according to any one of claims 1-5, which is characterized in that the resistance welding is
Parallel welding indirectly is carried out by parallel indirect resistance welding equipment；
The parallel indirect resistance welding equipment includes the first welding tip electrode being parallel to each other and the second welding tip electrode, institute
It is corresponding with the substrate to state the first welding tip electrode, the second electrode connector is corresponding with the pin,
Or, the resistance welding is to carry out block form welding by resistance welding equipment arranged side by side；
The resistance welding equipment arranged side by side includes the first welding tip electrode and the second welding tip electrode, the first plumb joint electricity
Pole and the second electrode connector are corresponding with the pin.
7. power modules processing method according to claim 2, which is characterized in that the insulating metal substrate successively includes
Metal substrate layer, insulating layer and substrate circuit layer, the electronic component are arranged on the substrate circuit layer.
8. power modules processing method according to claim 4, which is characterized in that the ceramic copper-clad plate successively includes base
Back layers of copper, sheet ceramic layer and substrate circuit layer, the electronic component setting is on waiting substrate circuit layer.
9. a kind of power modules processing method, which comprises the following steps:
Step S1, substrate is provided；
Step S2: going up core, routing, electronic component is installed on Yu Suoshu substrate, routing connects relative electronic components；
Step S3: welding pin directly engages base plate line and pin by the way of laser welding；
Step S4, it encapsulates, insulation-encapsulated is carried out using packaging plastic；
Step S5, molding is cut out；
Wherein the step S3 can be carried out between the step S2 and the step S4, or, the step S3 is in the step
It is carried out before S2.
10. a kind of power modules, which is characterized in that use power modules processing method of any of claims 1-9
Carry out pin engagement.
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| CN201811388375.4A CN109616420A (en) | 2018-11-21 | 2018-11-21 | A kind of power modules processing method and power modules |
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| CN201811388375.4A CN109616420A (en) | 2018-11-21 | 2018-11-21 | A kind of power modules processing method and power modules |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241330A (en) * | 2020-08-12 | 2021-08-10 | Jmj 韩国株式会社 | Coupled semiconductor package |
| CN114630500A (en) * | 2021-10-12 | 2022-06-14 | 祥博传热科技股份有限公司 | Welding device for high-heat-conductivity copper-clad ceramic substrate |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5234150A (en) * | 1989-09-20 | 1993-08-10 | Sumitomo Special Metal Co. | Method of manufacturing spotwise partial clad material |
| US20030213979A1 (en) * | 2002-03-08 | 2003-11-20 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device |
| CN101488495A (en) * | 2007-11-29 | 2009-07-22 | 英飞凌科技股份有限公司 | Semiconductor module with switching components and driver electronics |
| CN102576706A (en) * | 2010-03-16 | 2012-07-11 | 富士电机株式会社 | Semiconductor device |
| KR20120105920A (en) * | 2011-03-17 | 2012-09-26 | 엘에스파워세미텍 주식회사 | Semiconductor package |
| CN102903693A (en) * | 2011-07-25 | 2013-01-30 | 三星电机株式会社 | Power device package module and manufacturing method thereof |
| CN103208473A (en) * | 2012-12-15 | 2013-07-17 | 南京银茂微电子制造有限公司 | Power module adopting laser welding terminals |
| US20130207253A1 (en) * | 2008-03-31 | 2013-08-15 | Fairchild Korea Semiconductor, Ltd. | Complex Semiconductor Packages and Methods of Fabricating the Same |
| CN103779295A (en) * | 2012-10-24 | 2014-05-07 | 三星电机株式会社 | Power module package |
| CN104867918A (en) * | 2014-02-26 | 2015-08-26 | 西安永电电气有限责任公司 | Plastic packaging type IPM module and fixing structure for DBC board thereof |
| CN208111434U (en) * | 2018-04-26 | 2018-11-16 | 珠海格力电器股份有限公司 | Power module |
-
2018
- 2018-11-21 CN CN201811388375.4A patent/CN109616420A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5234150A (en) * | 1989-09-20 | 1993-08-10 | Sumitomo Special Metal Co. | Method of manufacturing spotwise partial clad material |
| US20030213979A1 (en) * | 2002-03-08 | 2003-11-20 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device |
| CN101488495A (en) * | 2007-11-29 | 2009-07-22 | 英飞凌科技股份有限公司 | Semiconductor module with switching components and driver electronics |
| US20130207253A1 (en) * | 2008-03-31 | 2013-08-15 | Fairchild Korea Semiconductor, Ltd. | Complex Semiconductor Packages and Methods of Fabricating the Same |
| CN102576706A (en) * | 2010-03-16 | 2012-07-11 | 富士电机株式会社 | Semiconductor device |
| KR20120105920A (en) * | 2011-03-17 | 2012-09-26 | 엘에스파워세미텍 주식회사 | Semiconductor package |
| CN102903693A (en) * | 2011-07-25 | 2013-01-30 | 三星电机株式会社 | Power device package module and manufacturing method thereof |
| CN103779295A (en) * | 2012-10-24 | 2014-05-07 | 三星电机株式会社 | Power module package |
| CN103208473A (en) * | 2012-12-15 | 2013-07-17 | 南京银茂微电子制造有限公司 | Power module adopting laser welding terminals |
| CN104867918A (en) * | 2014-02-26 | 2015-08-26 | 西安永电电气有限责任公司 | Plastic packaging type IPM module and fixing structure for DBC board thereof |
| CN208111434U (en) * | 2018-04-26 | 2018-11-16 | 珠海格力电器股份有限公司 | Power module |
Non-Patent Citations (2)
| Title |
|---|
| 金德宣，张晓梅: "《微电子焊接与封装》", 30 November 1996, 电子科技大学出版社 * |
| 霍绍新，解启林: ""微电阻焊及其在雷达T/ R 组件互连中的应用"", 《电子机械工程》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241330A (en) * | 2020-08-12 | 2021-08-10 | Jmj 韩国株式会社 | Coupled semiconductor package |
| CN114630500A (en) * | 2021-10-12 | 2022-06-14 | 祥博传热科技股份有限公司 | Welding device for high-heat-conductivity copper-clad ceramic substrate |
| CN114630500B (en) * | 2021-10-12 | 2024-02-23 | 祥博传热科技股份有限公司 | Welding device for high-heat-conductivity copper-clad ceramic substrate |
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