CN109616328A - A kind of preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe - Google Patents
A kind of preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe Download PDFInfo
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- CN109616328A CN109616328A CN201811477612.4A CN201811477612A CN109616328A CN 109616328 A CN109616328 A CN 109616328A CN 201811477612 A CN201811477612 A CN 201811477612A CN 109616328 A CN109616328 A CN 109616328A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a kind of preparation methods of quantum dot sensitized solar battery of surface passivation CdSeTe, CdSeTe quantum dot is prepared using oily phase method, use OM surface passivation CdSeTe quantum dot, CdS passivating film is deposited in quantum dot sensitized photoanode surface by successive ionic layer adsorption and reaction method, CuS is assembled into sandwich structure to electrode and quantum dot sensitized light anode, and electrolyte is injected in centre, is prepared into quantum dot sensitized solar battery.Absorption region is selected to be able to enter the ternary quantum dots of near-infrared region as photoelectric sensitization agent, and dressing agent OM is selected to be passivated processing to quantum dot surface, improve quantum dot surface defect, reduction interface charge is compound, to improve the incident photon-to-electron conversion efficiency of quantum dot solar cell.
Description
Technical field
The invention belongs to area of solar cell, specifically a kind of quantum dot sensitized solar battery of surface passivation CdSeTe
Preparation method.
Background technique
Energy and environment are the two large problems that world today's development faces and human society survival and develop institute face
The significant challenge faced.Therefore find and tap a new source of energy is key subjects that current various countries must carry out.Solar energy is due to it
The characteristics of inexhaustible, green non-pollution, becomes the emphasis of numerous scholars' researchs.In dye-sensitized solar cells
Develop the quantum dot sensitized solar battery (Quantum come on the basis of (Dye sensitized solar cells, DSSCs)
Dots sensitized solar cells, QDSCCs) as novel third generation solar cell by the extensive of scholars
Concern.Quantum dot is not only many kinds of, and stability is good, and the service life is long, and manufacturing cost is low, as photosensitizer, while having many
Special property: (1) absorption spectrum of quantum dot is wider and continuously distributed, emission spectrum peak is narrow and symmetrical, therefore with a wave
Long light can excite the fluorescence quantum of different wave length simultaneously；(2) quantum dot has the characteristics that component and size adjustable, can be with
So that the quantum dot of excitation light source excitation a variety classes and size；(3) quantum dot has multiple exciton effect, a photon
One or more electronics can be made to receive energy to free one's minds, become exciton.This advantage makes quantum dot sensitized solar energy
Battery has the advantages that other types solar battery is incomparable.
The band gap of quantum dot determines light abstraction width, is based on quantum size effect, and the band gap of quantum dot can pass through tune
Section component changes the particle size of quantum dot to regulate and control.It is some in order to make full use of the solar energy of near-infrared region
Scholar attempts to select absorption region bigger quantum dot, such as Cai et al. (Cai C, Zhai L, Ma Y, et
al.Synthesis of AgInS2 quantum dots with tunable photoluminescence for
Sensitized solar cells [J] .Journal of Power Sources, 2017,341:11-18) by adjusting amount
Sub- point AgInS2Element ratio, absorption region is increased to 720nm from 520nm, incident photon-to-electron conversion efficiency is increased to from 1.18%
2.91%.In addition, the charge recombination that quantum dot surface defect generates has seriously affected the light of quantum dot sensitized solar battery
Electrotransformation efficiency, people attempt to be surface modified using sulfydryl coupling quantum dot, and principle is the gold using quantum dot surface
Belong to existing strong effect power between ion and sulfydryl and form complex compound, improves the defect of quantum dot surface.But pass through at present
Mercapto-modified method mostly uses greatly only one sulfydryl officials such as thioacetic acid (TGA), mercaptopropionic acid (MPA), L-cysteine
Can the ligand of group be coupled, simultaneously because dressing agent itself easily decomposes, the product stability of generation it is poor (Zhang Mengya, Gao Bing,
The synthesis in water and characterization [J] Rare Metals Materials of Liu Cui, et al.L- cysteine modified CdTe and CdTe/CdS quantum dot
With engineering, 2016 (s1): 554-559).
In order to improve utilization of the quantum dot to solar energy, inhibits charge recombination, reduce surface defect, it is necessary to find
A kind of absorption region is able to enter the quantum dot of near-infrared region as photoelectric sensitization agent, and passivator is selected to carry out quantum dot
Surface modification improves the photoelectric conversion performance of quantum dot sensitized solar battery to improve quantum dot surface performance.
Summary of the invention
In view of the deficiencies of the prior art, the technical issues of present invention intends to solve is to provide a kind of surface passivation CdSeTe amount
The preparation method of son point sensitization solar battery.
It is quantum dot sensitized too that the technical solution that the present invention solves the technical problem is to provide a kind of surface passivation CdSeTe
The preparation method of positive energy battery, it is characterised in that method includes the following steps:
(1) CdSeTe quantum dot powder the preparation of CdSeTe quantum dot: is prepared using oily phase method；
(2) preparation of surface passivation CdSeTe quantum dot: OM is dissolved in tetrahydrofuran, after ultrasonic dissolution 10-30min,
It is added in the solution that the CdSeTe quantum dot powder that step 1) obtains is configured to, 3-5h is stirred at room temperature, finally by being centrifuged, doing
It is dry, obtain OM-CdSeTe quantum dot powder；The molar ratio of CdSeTe and OM is 1:10-50；
(3) prepare quantum dot sensitized light anode: the OM-CdSeTe quantum dot powder that step 2) is obtained configures OM-
CdSeTe quantum dot solution, it is 8-12 that TGA, which is added, and adjusts pH value of solution, by TiO2Light anode is molten in OM-CdSeTe quantum dot
12-36h is impregnated in liquid, obtains quantum dot sensitized light anode；The volume ratio of TGA and OM-CdSeTe quantum dot solution is 1-4:
600-1200；
(4) quantum dot sensitized light anode is successively immersed into Cd (CH3COO)2·2H2In O methanol solution and Na2S·9H2O first
In alcoholic solution, and cleaning is used as one cycle in methanol solution；This circulation is repeated, obtains to surface and is deposited with CdS passivating film
Quantum dot sensitized light anode；
(5) preparation to electrode: FTO electro-conductive glass is put into electronic cleaning agent and is cleaned by ultrasonic 0.5-2h, then spend from
Sub- water rinses, then is sequentially placed into ethyl alcohol and acetone and distinguishes ultrasound 0.5-2h, immersed after drying process mantoquita that pH is 2~5 with
Na2S2O3·5H2In the mixed solution of O, in 50-80 DEG C of isothermal holding 3-6h, CuS layers are generated in FTO conductive glass surface；Copper
Salt and Na2S2O3·5H2The molar ratio of O is 1:1-4；
(6) preparation of electrolyte: by KCl, Na2S·9H2O and S dissolution in deionized water, surpasses under the conditions of 40-60 DEG C
0.5-2h is swung in acoustic shock, obtains molar ratio KCl:Na2S·9H2The electrolyte of O:S=1-10:10-40:10-40；
(7) battery assembly: the surface that step 4) is obtained is deposited with the quantum dot sensitized light anode and step of CdS passivating film
5) obtain to electrode assembling at sandwich structure, and surface be deposited with the quantum dot sensitized light anode of CdS passivating film with it is right
Injection step 6 between electrode) obtained electrolyte, quantum dot sensitized solar battery is made.
Compared with prior art, the beneficial effects of the invention are that:
(1) ternary CdSeTe quantum dot is combined to using oil, there is broader absorption spectrum, ABSORPTION EDGE is able to enter close red
The area Wai Guang, ABSORPTION EDGE can almost reach 800nm.Ternary quantum dots need to only change quantum due to there is " Optical bend " effect
Point element ratio can enter near-infrared region without changing quantum dot particle size.Not only preparation process is simple, but also reacts
Mild condition, controllable, repeatability is strong, can significantly improve utilization of the quantum dot to sunlight.
(2) quantum dot surface, the modification are passivated to CdSeTe quantum dot optoelectronic sensitizer doping vario-property using dressing agent OM
Agent has 8 sulfydryls, and Passivation Treatment can improve quantum dot surface defect, improves TiO2/ QDs (quantum dot)/electrolyte
(electrolyte) interface state, reduction interface charge is compound, improves surface stability, improves quantum dot to the benefit of solar energy
With raising light induced electron injects the efficiency of quantum dot sensitized photoanode surface, to improve the photoelectricity of quantum dot solar cell
Transformation efficiency.The quantum dot sensitized solar battery being prepared by the quantum dot that surface passivating treatment is crossed, compared to tradition side
Method, conversion ratio improve 41%.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the OM of an embodiment of the present invention；
Fig. 2 is the process schematic of the OM surface passivation CdSeTe quantum dot of an embodiment of the present invention；
Fig. 3 is the ultraviolet-visible absorption spectroscopy figure of CdSeTe quantum dot in the embodiment of the present invention 1；
Fig. 4 is the fluorescence emission spectrogram of compound of CdSeTe and OM-CdSeTe quantum dot in the embodiment of the present invention 1；
Fig. 5 is the infrared spectrogram of OM, CdSeTe and OM-CdSeTe quantum dot in the embodiment of the present invention 1；
Fig. 6 is the thermogravimetric curve figure of CdSeTe and OM-CdSeTe quantum dot in the embodiment of the present invention 1；
Fig. 7 is the solar battery J-V curve graph of CdSeTe and OM-CdSeTe quantum dot preparation in the embodiment of the present invention 1；
Fig. 8 is that the electrochemistry of the solar battery of CdSeTe and OM-CdSeTe quantum dot preparation in the embodiment of the present invention 1 is handed over
Flow impedance spectrogram；
Specific embodiment
Specific embodiments of the present invention are given below.Specific embodiment is only used for that present invention be described in more detail, unlimited
The protection scope of the claim of this application processed.
The present invention provides a kind of preparation method (the abbreviation sides of quantum dot sensitized solar battery of surface passivation CdSeTe
Method), it is characterised in that method includes the following steps:
(1) CdSeTe quantum dot powder the preparation of CdSeTe quantum dot: is prepared using oily phase method；By the source Cd solution, the source Se
Solution and the source Te solution carry out magnetic agitation and are uniformly mixed, while passing through OH using the strong base solution of 0.5-2mol/L-Ion tune
PH to 8-11 is saved, in inert gas (the present embodiment N2) be warming up to 200-350 DEG C under protection after, keep the temperature 5-20min；Then it opens
Begin to cool down, excessive oleic acid is injected when reaching 100-300 DEG C, continues to cool down after keeping the temperature 1-10min, obtains oiliness CdSeTe quantum
Point solution；It is in order to remove the impurity and unreacted reactant in CdSeTe quantum dot solution, CdSeTe quantum dot solution is molten in methanol
It is cleaned in liquid, outwells supernatant liquor, residue is placed in methylene chloride and carries out centrifugation purification, finally in drying box
30-60 DEG C of heat preservation 3-8h, obtains CdSeTe quantum dot powder；
The preparation of the source Cd solution: by CdCl2·2.5H2O powder is added in atoleine and carries out magnetic agitation, whipping process
In oleic acid is added dropwise, in inert gas (the present embodiment N2) temperature is heated to 100-250 DEG C under protection after stop heating,
5-20min natural cooling is kept the temperature, the colorless and transparent source the Cd solution that concentration is 0.5-2mol/L is obtained；Atoleine and oleic acid
Volume ratio is 1-3:1.
The preparation of the source Se solution: Se powder is added in atoleine and carries out magnetic agitation, is added dropwise three in whipping process
N-octyl phosphine (TOP), in inert gas (the present embodiment N2) temperature is heated to 50-100 DEG C under protection after stop heating, protect
Warm 5-20min, natural cooling obtain the colorless and transparent source the Se solution that concentration is 0.5-2mol/L；The body of atoleine and TOP
Product is than being 1-3:1.
The preparation of the source Te solution: Te powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in inert gas (the present embodiment N2) temperature is increased to 200-300 DEG C under protection after stop heating, keep the temperature 5-
20min, natural cooling obtain the source the Te solution for the yellow transparent that concentration is 0.5-2mol/L；The volume ratio of atoleine and TOP
For 1-3:1.
(2) preparation of surface passivation CdSeTe quantum dot: CdSeTe quantum dot is modified using OM；By OM (octa-
Mercaptopropyl polyhedral oligomeric silsesquioxane, eight mercapto propyl polyhedral oligomeric sesquialter silicon
Oxygen alkane) it is dissolved in tetrahydrofuran (THF), after ultrasonic dissolution 10-30min, it is added dropwise to the CdSeTe quantum that step 1) obtains
Point powder is dissolved in the solution that water is configured to, and 3-5h is stirred at room temperature, and finally by centrifugation, drying, obtains OM-CdSeTe quantum dot
Powder；The molar ratio of CdSeTe and OM is 1:10-50；
(3) it prepares quantum dot sensitized light anode: the OM-CdSeTe quantum dot powder that step 2) obtains being dissolved in water and is configured to
Concentration is the OM-CdSeTe quantum dot solution of 0.2mmol/L, and TGA (thioacetic acid) is added and passes through OH-Ion adjusts solution
PH is 8-12, by TiO2Light anode impregnates 12-36h in OM-CdSeTe quantum dot solution, obtains quantum dot sensitized light anode；
The volume ratio of TGA and OM-CdSeTe quantum dot solution is 1-4:600-1200；
TiO used in step 32Light anode is prepared by sol-gel method, and specific method is by TiO2Slurry is using rotation
Coating is uniformly spun on FTO conductive glass surface, is subsequently placed in Muffle furnace and is sintered 0.5-2h at 400-500 DEG C, then by it
It is cleaned with deionized water, obtains TiO2Light anode.
(4) successive ionic layer adsorption and reaction method (SILAR) is used, quantum dot sensitized light anode is successively immersed into Cd
(CH3COO)2·2H2In O methanol solution and Na2S·9H2In O methanol solution, and the cleaning removal surface impurity in methanol solution
With unreacted ion as one cycle；It repeats this circulation 1-5 times, it is quick to obtain the quantum dot for being deposited with CdS passivating film to surface
Change light anode；
Cd (CH used in step 43COO)2·2H2O methanol solution and Na2S·9H2O concentration of methanol solution is identical,
For 0.05-0.2mol/L, soaking time is 0.5~2min；Scavenging period is 5~30s in methanol solution.
(5) preparation is to electrode: by the FTO (SnO of doping fluorine2) electro-conductive glass is put into electronic cleaning agent and is cleaned by ultrasonic 0.5-
2h removes the impurity such as surface grease and dust, is then rinsed with deionized water, then is sequentially placed into ethyl alcohol and acetone ultrasound respectively
0.5-2h immerses mantoquita and Na that pH is 2~5 after drying process2S2O3·5H2In the mixed solution of O, the 50-80 in incubator
DEG C isothermal holding 3-6h generates CuS layers in FTO conductive glass surface；Mantoquita and Na2S2O3·5H2The molar ratio of O is 1:1-4；
The pH value of mixed solution is adjusted by acetic acid；The electronic cleaning agent selects dish washing liquid；Mantoquita is Cu (CH3COO)2·H2O、
CuCl2·2H2O or CuSO4·5H2O；
(6) preparation of electrolyte: by KCl, Na2S·9H2O and S dissolution in deionized water, surpasses under the conditions of 40-60 DEG C
0.5-2h is swung in acoustic shock, obtains molar ratio KCl:Na2S·9H2The electrolyte of O:S=1-10:10-40:10-40；
(7) battery assembly: the surface that step 4) is obtained is deposited with the quantum dot sensitized light anode and step of CdS passivating film
5) obtain to electrode assembling at sandwich structure, and surface be deposited with the quantum dot sensitized light anode of CdS passivating film with it is right
Injection step 6 between electrode) obtained electrolyte, quantum dot sensitized solar battery is made.
Embodiment 1
(1) preparation of CdSeTe quantum dot: the source Cd solution, the source Se solution and the source Te solution are subjected to magnetic agitation and mixed
It is even, while passing through OH using the NaOH solution of 1mol/L-Ion-select electrode pH to 10.5, in N2After being warming up to 320 DEG C under protection, protect
Warm 5min；Then start to cool down, excessive oleic acid is injected when reaching 260 DEG C, continues to cool down after keeping the temperature 5min, obtains oiliness
CdSeTe quantum dot solution；It is in order to remove the impurity and unreacted reactant in CdSeTe quantum dot solution, CdSeTe quantum dot is molten
Liquid is cleaned in methanol solution, outwells supernatant liquor, and resultant product is placed in methylene chloride and carries out centrifugation purification, finally
50 DEG C of heat preservation 6h, obtain CdSeTe quantum dot powder in drying box；
The preparation of the source Cd solution: by CdCl2·2.5H2O powder is added in atoleine and carries out magnetic agitation, whipping process
In oleic acid is added dropwise, in N2Stop heating after temperature is heated to 150 DEG C under protection, keep the temperature 10min natural cooling, obtains dense
Degree is the colorless and transparent source the Cd solution of 1mol/L；The volume ratio of atoleine and oleic acid is 3:1.
The preparation of the source Se solution: Se powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in N2Stop heating after temperature is heated to 100 DEG C under protection, keep the temperature 10min, natural cooling, acquisition concentration is 1mol/L
The colorless and transparent source Se solution；The volume ratio of atoleine and TOP are 3:1.
The preparation of the source Te solution: Te powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in N2Stop heating after temperature is increased to 270 DEG C under protection, keep the temperature 10min, natural cooling, acquisition concentration is 1mol/L
Yellow transparent the source Te solution；The volume ratio of atoleine and TOP are 3:1.
(2) preparation of surface passivation CdSeTe quantum dot: OM is dissolved in THF, after ultrasonic dissolution 30min, is added dropwise
In the solution that the CdSeTe quantum dot powder obtained to step 1) is configured to, 4h is stirred at room temperature, finally by centrifugation, drying, obtains
To OM-CdSeTe quantum dot powder；The molar ratio of CdSeTe and OM is 1:10；
(3) prepare quantum dot sensitized light anode: the OM-CdSeTe quantum dot powder that step 2) obtains, which is configured to concentration, is
The OM-CdSeTe quantum dot solution of 0.2mmol/L is added TGA and passes through OH-It is 10 that ion, which adjusts pH value of solution, by TiO2Light sun
Pole is impregnated for 24 hours in OM-CdSeTe quantum dot solution, obtains quantum dot sensitized light anode；TGA and OM-CdSeTe quantum dot are molten
The volume ratio of liquid is 1:600；
TiO used in step 32Light anode is prepared by sol-gel method, and concrete operation step is by TiO2Slurry is adopted
It is uniformly spun on FTO conductive glass surface with spin-coating method, is subsequently placed in Muffle furnace and is sintered 0.5h at 450 DEG C, then used
Deionized water cleaning, obtains TiO2Light anode.
(4) SILAR is used, quantum dot sensitized light anode is successively immersed into Cd (CH3COO)2·2H2O methanol solution neutralizes
Na2S·9H2In O methanol solution, and cleaning removes surface impurity and unreacted ion as one cycle in methanol solution；
It repeats this circulation 4 times, obtains to surface and be deposited with the quantum dot sensitized light anode of CdS passivating film；
Cd (CH used in step 43COO)2·2H2O methanol solution and Na2S·9H2O concentration of methanol solution is identical,
For 0.1mol/L, soaking time is 0.5min；The scavenging period 30s in methanol solution.
(5) preparation is to electrode: FTO electro-conductive glass being put into electronic cleaning agent and is cleaned by ultrasonic 0.5h, removes surface grease
It with the impurity such as dust, is then rinsed with deionized water, then is sequentially placed into ethyl alcohol and acetone and distinguishes ultrasound 0.5h, after drying process
Immerse the CuSO that pH is 24·5H2O and Na2S2O3·5H2In the mixed solution of O, 50 DEG C of isothermal holding 3h in incubator,
FTO conductive glass surface generates CuS layers；CuSO4·5H2O and Na2S2O3·5H2The molar ratio of O is 1:4；
(6) preparation of electrolyte: by KCl, Na2S·9H2In deionized water, ultrasound is shaken under the conditions of 40 DEG C for O and S dissolution
1h is swung, molar ratio KCl:Na is obtained2S·9H2The electrolyte of O:S=1:10:10；
(7) battery assembly: the surface that step 4) is obtained is deposited with the quantum dot sensitized light anode and step of CdS passivating film
5) obtain to electrode assembling at sandwich structure, and surface be deposited with the quantum dot sensitized light anode of CdS passivating film with it is right
Injection step 6 between electrode) obtained electrolyte, quantum dot sensitized solar battery is made.
Battery testing: being measured at room temperature using Keithley 2400, and light source is to moor luxuriant and rich with fragrance Lay CHF-XM500 xenon lamp, light
It is 100mW/cm according to intensity2(AM1.5), cell active area 0.36cm2, 1 battery performance parameter test result such as table of embodiment
Shown in 1.
Table 1
| Light anode | Jsc(mA/cm2) | Voc(V) | FF | η (%) |
| CdSeTe | 6.593 | 0.647 | 0.469 | 2.00 |
| OM-CdSeTe | 8.410 | 0.690 | 0.486 | 2.82 |
Testing impedance:
Electrochemical impedance test is carried out using Shanghai Chen Hua CHI660e, 1 electrochemical impedance parameter testing result of embodiment is such as
Shown in table 2.
Table 2
As seen from Figure 3, the ABSORPTION EDGE of quantum dot almost reaches to 800nm, comes into near-infrared region, this is because
The influence of " Optical bend " effect, quantum dot are conducive to absorb more solar energy in infrared light district, illustrate prepared by the present invention
Quantum dot of the CdSeTe quantum dot compared to tradition in visible region has better application prospect.
As seen from Figure 4, by the modification of OM, the fluorescence intensity of quantum dot is significantly improved, this is because the surface of OM
Passivation reduces the surface defect of quantum dot, caused by the multiple exciton effect accumulation of enhancing.
As seen from Figure 5,1062cm is located in OM-CdSeTe-1And 1139cm-1Eigen vibration peak show that there are OM
Si-O-Si unit in cage, this and OM are in 1024cm-1And 1124cm-1The peak of position matches, unpassivated CdSeTe
There is no this characteristic peak in quantum dot.In addition OM is in 2546cm-1The corresponding sulfydryl (- SH) in position disappears in OM-CdSeTe, it was demonstrated that
OM is successfully passivated the surface CdSeTe.
As seen from Figure 6, all there are three the stages for two curves in figure.The temperature range of first stage be 30~
223.3℃.Moisture and the therein crystallization water of the weightlessness in the stage mainly including quantum dot surface absorption, weight-loss ratio 13%.
The weight loss rate of second stage is accelerated, and this is mainly due to the decomposition of the quantum dot compounds of synthesis.Stage CdSeTe quantum
The weightless temperature range of point is 228.3~297.6 DEG C, and the weightless temperature range of OM-CdSeTe quantum dot is 228.3~276.2
℃.The weight-loss ratio ratio CdSeTe of OM-CdSeTe is fast.There is only the decomposition of CdSeTe quantum dot, but also there are OM in QDs
Decomposition on the surface (quantum dot, quantum dots).The basic phase of rate of weight loss of phase III CdSeTe and OM-CdSeTe
Together, but the total weight loss of OM-CdSeTe is larger, this is because caused by the decomposition of OM.Therefore, it by thermogravimetric analysis, can demonstrate,prove
Successful passivation of the bright OM in CdSeTe quantum dot surface.
Fig. 7 is solar battery J-V curve prepared by CdSeTe quantum dot surface passivation front and back, and table 1 is relevant parameter.From
It can be seen that, after surface passivation, the short circuit current of solar battery is increased to 8.410mA/cm from 6.593 in table 12, open
Road voltage is increased to 0.690V from 0.647, and incident photon-to-electron conversion efficiency is increased to 2.82% from 2.00%, improves 41%, it was demonstrated that
Surface passivation can reduce quantum dot surface defect, reduce charge recombination, improve electron injection TiO2Efficiency.
Fig. 8 is solar battery electrochemical alternate impedance spectrum prepared by CdSeTe quantum dot surface passivation front and back, and table 2 is phase
Answer parameter.First small semicircle indicates to hinder the relevant interface of electronic transfer process of the electrode/electrolyte in high-frequency range to CuS
Anti- (R1), and the second large semicircle corresponds to interface impedance (R relevant to electric charge transfer2).In electrolyte/quantum dot/TiO2Interface
In low-frequency range.As shown, two quantum dot solar cells have similar R1Value, because of CdSeTe and OM-
CdSeTe quantum dot solar cell is based on identical electrolyte and CuS to electrode, so the first semicircle is in two solar-electricities
Without apparent difference between pond.Obviously, the second of the OM-CdSeTe quantum dot solar cell semicircle radius ratio CdSeTe
It is small, and the R of OM-CdSeTe quantum dot solar cell2It reduces.Lesser R2Show in electrolyte/quantum dot/TiO2Interface
Upper charge transmission resistance is larger, and charge recombination rate is lower, causes quantum dot solar cell photoelectric properties preferable.Reduced interface
Charge recombination rate is mainly the reduction and TiO due to quantum dot surface defect2Photoelectronic increase is injected on surface.
Embodiment 2
(1) preparation of CdSeTe quantum dot: the source Cd solution, the source Se solution and the source Te solution are subjected to magnetic agitation and mixed
It is even, while passing through OH using the NaOH solution of 0.5mol/L-Ion-select electrode pH to 9, in N2After being warming up to 200 DEG C under protection, heat preservation
5min；Then start to cool down, excessive oleic acid is injected when reaching 100 DEG C, continues to cool down after keeping the temperature 5min, obtains oiliness CdSeTe
Quantum dot solution；In order to remove the impurity and unreacted reactant in CdSeTe quantum dot solution, by CdSeTe quantum dot solution in first
It is cleaned in alcoholic solution, outwells supernatant liquor, resultant product is placed in methylene chloride and carries out centrifugation purification, finally in drying
40 DEG C of heat preservation 5h, obtain CdSeTe quantum dot powder in case；
The preparation of the source Cd solution: by CdCl2·2.5H2O powder is added in atoleine and carries out magnetic agitation, whipping process
In oleic acid is added dropwise, in N2Stop heating after temperature is heated to 100 DEG C under protection, keep the temperature 5min natural cooling, obtains dense
Degree is the colorless and transparent source the Cd solution of 1mol/L；The volume ratio of atoleine and oleic acid is 1:1.
The preparation of the source Se solution: Se powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in N2Stop heating after temperature is heated to 50 DEG C under protection, keeps the temperature 5min, natural cooling, obtaining concentration is 1mol/L's
The colorless and transparent source Se solution；The volume ratio of atoleine and TOP are 1:1.
The preparation of the source Te solution: Te powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in N2Stop heating after temperature is increased to 200 DEG C under protection, keep the temperature 5min, natural cooling, acquisition concentration is 1mol/L
Yellow transparent the source Te solution；The volume ratio of atoleine and TOP are 1:1.
(2) preparation of surface passivation CdSeTe quantum dot: OM is dissolved in THF, after ultrasonic dissolution 10min, is added dropwise
In the solution that the CdSeTe quantum dot powder obtained to step 1) is configured to, 3h is stirred at room temperature, finally by centrifugation, drying, obtains
To OM-CdSeTe quantum dot powder；The molar ratio of CdSeTe and OM is 1:30；
(3) prepare quantum dot sensitized light anode: the OM-CdSeTe quantum dot powder that step 2) obtains, which is configured to concentration, is
The OM-CdSeTe quantum dot solution of 0.2mmol/L is added TGA and passes through OH-It is 9 that ion, which adjusts pH value of solution, by TiO2Light sun
12h is impregnated in OM-CdSeTe quantum dot solution in pole, obtains quantum dot sensitized light anode；TGA and OM-CdSeTe quantum dot are molten
The volume ratio of liquid is 1:1000；
TiO used in step 32Light anode is prepared by sol-gel method, and concrete operation step is by TiO2Slurry is adopted
It is uniformly spun on FTO conductive glass surface with spin-coating method, is subsequently placed in Muffle furnace and is sintered 0.5h at 400 DEG C, then used
Deionized water cleaning, obtains TiO2Light anode.
(4) SILAR is used, quantum dot sensitized light anode is successively immersed into Cd (CH3COO)2·2H2O methanol solution neutralizes
Na2S·9H2In O methanol solution, and cleaning removes surface impurity and unreacted ion as one cycle in methanol solution；
It repeats this circulation 2 times, obtains to surface and be deposited with the quantum dot sensitized light anode of CdS passivating film；
Cd (CH used in step 43COO)2·2H2O methanol solution and Na2S·9H2O concentration of methanol solution is identical,
For 0.05mol/L, soaking time is 0.5min；The scavenging period 10s in methanol solution.
(5) preparation is to electrode: FTO electro-conductive glass being put into electronic cleaning agent and is cleaned by ultrasonic 0.5h, removes surface grease
It with the impurity such as dust, is then rinsed with deionized water, then is sequentially placed into ethyl alcohol and acetone and distinguishes ultrasound 0.5h, after drying process
Immerse the Cu (CH that pH is 33COO)2·H2O and Na2S2O3·5H2In the mixed solution of O, 50 DEG C of isothermal holdings in incubator
3h generates CuS layers in FTO conductive glass surface；Cu(CH3COO)2·H2O and Na2S2O3·5H2The molar ratio of O is 1:1；
(6) preparation of electrolyte: by KCl, Na2S·9H2In deionized water, ultrasound is shaken under the conditions of 40 DEG C for O and S dissolution
0.5h is swung, molar ratio KCl:Na is obtained2S·9H2The electrolyte of O:S=1:10:20；
(7) battery assembly: the surface that step 4) is obtained is deposited with the quantum dot sensitized light anode and step of CdS passivating film
5) obtain to electrode assembling at sandwich structure, and surface be deposited with the quantum dot sensitized light anode of CdS passivating film with it is right
Injection step 6 between electrode) obtained electrolyte, quantum dot sensitized solar battery is made.
Embodiment 3
(1) preparation of CdSeTe quantum dot: the source Cd solution, the source Se solution and the source Te solution are subjected to magnetic agitation and mixed
It is even, while passing through OH using the KOH solution of 2mol/L-Ion-select electrode pH to 11, in N2After being warming up to 350 DEG C under protection, heat preservation
20min；Then start to cool down, excessive oleic acid is injected when reaching 300 DEG C, continues to cool down after keeping the temperature 10min, obtains oiliness
CdSeTe quantum dot solution；It is in order to remove the impurity and unreacted reactant in CdSeTe quantum dot solution, CdSeTe quantum dot is molten
Liquid is cleaned in methanol solution, outwells supernatant liquor, and resultant product is placed in methylene chloride and carries out centrifugation purification, finally
60 DEG C of heat preservation 8h, obtain CdSeTe quantum dot powder in drying box；
The preparation of the source Cd solution: by CdCl2·2.5H2O powder is added in atoleine and carries out magnetic agitation, whipping process
In oleic acid is added dropwise, in N2Stop heating after temperature is heated to 250 DEG C under protection, keep the temperature 20min natural cooling, obtains dense
Degree is the colorless and transparent source the Cd solution of 2mol/L；The volume ratio of atoleine and oleic acid is 2:1.
The preparation of the source Se solution: Se powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in N2Stop heating after temperature is heated to 100 DEG C under protection, keep the temperature 20min, natural cooling, acquisition concentration is 2mol/L
The colorless and transparent source Se solution；The volume ratio of atoleine and TOP are 2:1.
The preparation of the source Te solution: Te powder is added in atoleine and carries out magnetic agitation, is added dropwise in whipping process
TOP, in N2Stop heating after temperature is increased to 300 DEG C under protection, keep the temperature 20min, natural cooling, acquisition concentration is 2mol/L
Yellow transparent the source Te solution；The volume ratio of atoleine and TOP are 2:1.
(2) preparation of surface passivation CdSeTe quantum dot: OM is dissolved in THF, after ultrasonic dissolution 30min, is added dropwise
In the solution that the CdSeTe quantum dot powder obtained to step 1) is configured to, 5h is stirred at room temperature, finally by centrifugation, drying, obtains
To OM-CdSeTe quantum dot powder；The molar ratio of CdSeTe and OM is 1:40；
(3) prepare quantum dot sensitized light anode: the OM-CdSeTe quantum dot powder that step 2) obtains, which is configured to concentration, is
The OM-CdSeTe quantum dot solution of 0.2mmol/L is added TGA and passes through OH-It is 11 that ion, which adjusts pH value of solution, by TiO2Light sun
36h is impregnated in OM-CdSeTe quantum dot solution in pole, obtains quantum dot sensitized light anode；TGA and OM-CdSeTe quantum dot are molten
The volume ratio of liquid is 1:1200；
TiO used in step 32Light anode is prepared by sol-gel method, and concrete operation step is by TiO2Slurry is adopted
It is uniformly spun on FTO conductive glass surface with spin-coating method, is subsequently placed in Muffle furnace and is sintered 2h at 500 DEG C, then spent
Ionized water cleaning, obtains TiO2Light anode.
(4) SILAR is used, quantum dot sensitized light anode is successively immersed into Cd (CH3COO)2·2H2O methanol solution neutralizes
Na2S·9H2In O methanol solution, and cleaning removes surface impurity and unreacted ion as one cycle in methanol solution；
It repeats this circulation 5 times, obtains to surface and be deposited with the quantum dot sensitized light anode of CdS passivating film；
Cd (CH used in step 43COO)2·2H2O methanol solution and Na2S·9H2O concentration of methanol solution is identical,
For 0.2mol/L, soaking time is 2min；The scavenging period 30s in methanol solution.
(5) preparation to electrode: FTO electro-conductive glass is put into electronic cleaning agent and is cleaned by ultrasonic 2h, removal surface grease and
The impurity such as dust, are then rinsed with deionized water, then are sequentially placed into ethyl alcohol and acetone and are distinguished ultrasound 2h, are immersed after drying process
The CuCl that pH is 42·2H2O and Na2S2O3·5H2In the mixed solution of O, 80 DEG C of isothermal holding 6h in incubator are led in FTO
Electric glass surface generates CuS layers；CuCl2·2H2O and Na2S2O3·5H2The molar ratio of O is 1:2；
(6) preparation of electrolyte: by KCl, Na2S·9H2In deionized water, ultrasound is shaken under the conditions of 60 DEG C for O and S dissolution
2h is swung, molar ratio KCl:Na is obtained2S·9H2The electrolyte of O:S=1:20:40；
(7) battery assembly: the surface that step 4) is obtained is deposited with the quantum dot sensitized light anode and step of CdS passivating film
5) obtain to electrode assembling at sandwich structure, and surface be deposited with the quantum dot sensitized light anode of CdS passivating film with it is right
Injection step 6 between electrode) obtained electrolyte, quantum dot sensitized solar battery is made.
The present invention does not address place and is suitable for the prior art.
Claims (8)
1. a kind of preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe, it is characterised in that this method include with
Lower step:
(1) CdSeTe quantum dot powder the preparation of CdSeTe quantum dot: is prepared using oily phase method；
(2) preparation of surface passivation CdSeTe quantum dot: OM is dissolved in tetrahydrofuran, after ultrasonic dissolution 10-30min, is added
In the solution that the CdSeTe quantum dot powder obtained to step 1) is configured to, 3-5h is stirred at room temperature, finally passes through centrifugation, drying,
Obtain OM-CdSeTe quantum dot powder；The molar ratio of CdSeTe and OM is 1:10-50；
(3) prepare quantum dot sensitized light anode: the OM-CdSeTe quantum dot powder that step 2) is obtained configures OM-CdSeTe amount
Son point solution, it is 8-12 that TGA, which is added, and adjusts pH value of solution, by TiO2Light anode is impregnated in OM-CdSeTe quantum dot solution
12-36h obtains quantum dot sensitized light anode；The volume ratio of TGA and OM-CdSeTe quantum dot solution is 1-4:600-1200；
(4) quantum dot sensitized light anode is successively immersed into Cd (CH3COO)2·2H2In O methanol solution and Na2S·9H2O methanol is molten
In liquid, and cleaning is used as one cycle in methanol solution；This circulation is repeated, obtains to surface and is deposited with the quantum of CdS passivating film
Point sensitization light anode；
(5) preparation is to electrode: FTO electro-conductive glass being put into electronic cleaning agent and is cleaned by ultrasonic 0.5-2h, then uses deionized water
Rinse, then be sequentially placed into ethyl alcohol and acetone distinguish ultrasound 0.5-2h, after drying process immerse pH be 2~5 mantoquita with
Na2S2O3·5H2In the mixed solution of O, in 50-80 DEG C of isothermal holding 3-6h, CuS layers are generated in FTO conductive glass surface；Copper
Salt and Na2S2O3·5H2The molar ratio of O is 1:1-4；
(6) preparation of electrolyte: by KCl, Na2S·9H2In deionized water, ultrasound is shaken under the conditions of 40-60 DEG C for O and S dissolution
0.5-2h is swung, molar ratio KCl:Na is obtained2S·9H2The electrolyte of O:S=1-10:10-40:10-40；
(7) battery assembly: the surface that step 4) is obtained is deposited with the quantum dot sensitized light anode of CdS passivating film and step 5) obtains
Arrive to electrode assembling at sandwich structure, and surface be deposited with the quantum dot sensitized light anode of CdS passivating film with to electrode
Between injection step 6) obtained electrolyte, quantum dot sensitized solar battery is made.
2. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 1, feature
Be that the method for oil phase described in step 1) prepares the specific method of CdSeTe quantum dot powder and is: by the source Cd solution, the source Se solution and
The source Te solution is uniformly mixed, and passes through OH-Ion-select electrode pH to 8-11 after being warming up to 200-350 DEG C under inert gas protection, is protected
Warm 5-20min；Then start to cool down, excessive oleic acid is injected when reaching 100-300 DEG C, continues to cool down after keeping the temperature 1-10min, obtain
To oiliness CdSeTe quantum dot solution；CdSeTe quantum dot solution is cleaned in methanol solution again, outwells supernatant liquor,
Residue is placed in methylene chloride and carries out centrifugation purification, 30-60 DEG C of dry 3-8h obtains CdSeTe quantum dot powder.
3. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 2, feature
It is the preparation of the source Cd solution: by CdCl2·2.5H2O powder is added in atoleine and stirs and be added oleic acid, in inert gas
Stop heating after temperature is heated to 100-250 DEG C under protection, keep the temperature 5-20min natural cooling, obtains the source Cd solution；Liquid stone
The volume ratio of wax and oleic acid is 1-3:1.
4. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 2, feature
It is the preparation of the source Se solution: Se powder is added in atoleine and stirs and be added TOP, under inert gas protection adds temperature
Heat keeps the temperature 5-20min, natural cooling obtains the source Se solution to stopping heating after 50-100 DEG C；The volume of atoleine and TOP
Than for 1-3:1.
5. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 2, feature
It is the preparation of the source Te solution: Te powder is added in atoleine and stirs and be added TOP, under inert gas protection by temperature liter
Height keeps the temperature 5-20min to stopping heating after 200-300 DEG C, and natural cooling obtains the source Te solution；The volume of atoleine and TOP
Than for 1-3:1.
6. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 1, feature
It is TiO used in step 32Light anode is prepared by sol-gel method, and specific method is by TiO2Slurry uses spin-coating method
It uniformly is spun on FTO conductive glass surface, is subsequently placed at 400-500 DEG C and is sintered 0.5-2h, then cleaned, obtained with deionized water
Obtain TiO2Light anode.
7. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 1, feature
It is Cd (CH used in step 43COO)2·2H2O methanol solution and Na2S·9H2O concentration of methanol solution is identical, is
0.05-0.2mol/L, soaking time are 0.5~2min；Scavenging period is 5~30s in methanol solution.
8. the preparation method of the quantum dot sensitized solar battery of surface passivation CdSeTe according to claim 1, feature
It is that the pH value of mixed solution in step 5) is adjusted by acetic acid；The electronic cleaning agent selects dish washing liquid；Mantoquita is Cu
(CH3COO)2·H2O、CuCl2·2H2O or CuSO4·5H2O。
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| CN111312525A (en) * | 2020-01-20 | 2020-06-19 | 南昌航空大学 | Preparation method of quantum dot sensitized solar cell with ultrathin PMMA passivation layer |
| US10916380B1 (en) | 2020-07-26 | 2021-02-09 | United Arab Emirates University | Quantum dot-sensitized solar cell and method of making the same |
| CN115512972A (en) * | 2022-08-18 | 2022-12-23 | 河北大学 | Preparation method of quasi-solid electrolyte for quantum dot sensitized solar cell |
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| CN115512972B (en) * | 2022-08-18 | 2023-11-03 | 河北大学 | Preparation method of quasi-solid electrolyte for quantum dot sensitized solar cell |
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