CN109616063A - A kind of compensation device and compensation method of pixel circuit - Google Patents

A kind of compensation device and compensation method of pixel circuit Download PDF

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Publication number
CN109616063A
CN109616063A CN201811635105.9A CN201811635105A CN109616063A CN 109616063 A CN109616063 A CN 109616063A CN 201811635105 A CN201811635105 A CN 201811635105A CN 109616063 A CN109616063 A CN 109616063A
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oxide
semiconductor
metal
tft
thin film
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不公告发明人
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Fujian Huajiacai Co Ltd
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Fujian Huajiacai Co Ltd
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Priority to CN201811635105.9A priority Critical patent/CN109616063A/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals

Abstract

The present invention provides a kind of compensation device of pixel circuit and compensation method, each thin film transistor (TFT) includes signal input part, signal output end and driving end;The connecting pin of the signal output end of each thin film transistor (TFT) pixel circuit corresponding with the thin film transistor (TFT) connects, the connecting pin is the common end of liquid crystal capacitance C1 and storage capacitors C2 far from metal-oxide-semiconductor in pixel circuit, the signal input part is connect with external preset first voltage signal output end, and the driving end is connect with external preset first driving line.The present invention is solved causes the electric current generated to still suffer from difference since the threshold voltage of the thin film transistor (TFT) in each sub-pix is all different, and causes the non-uniform problem of Display panel.

Description

A kind of compensation device and compensation method of pixel circuit
Technical field
The present invention relates to liquid panel technique field more particularly to the compensation devices and compensation method of a kind of pixel circuit.
Background technique
AMOLED panel, due to the influence of processing procedure, the threshold voltage of the thin film transistor (TFT) in each pixel is all different, Even if providing the voltage Vdata of identical numerical value, generated electric current still suffers from difference, this also will cause panel uneven. In addition, if being compensated using pixel compensation circuit to above-mentioned voltage, most of compensation circuit can be limited to sweep time again It is too short and influence compensation effect.
In view of this, a kind of pixel compensation circuit for AMOLED panel how is designed, to effectively improve or eliminate Many defects such as above-mentioned panel is uneven, are the projects that related technical personnel are urgently to be resolved in the industry.
Summary of the invention
The technical problems to be solved by the present invention are: the present invention provides a kind of compensation device of pixel circuit and compensation sides Method can effectively compensate pixel circuit, improve the display effect of liquid crystal display panel.
In order to solve the above-mentioned technical problems, the present invention provides a kind of compensation devices of pixel circuit, including liquid crystal display panel In the corresponding pixel circuit of sub-pix and the thin film transistor (TFT) that is arranged in outside the area liquid crystal display panel AA;
Each thin film transistor (TFT) includes signal input part, signal output end and driving end;Each thin film transistor (TFT) The connecting pin of signal output end pixel circuit corresponding with the thin film transistor (TFT) connects, and the connecting pin is liquid crystal in pixel circuit The common end of capacitor C1 and storage capacitors C2 far from metal-oxide-semiconductor, the signal input part and external preset first voltage signal are defeated Outlet connection, the driving end are connect with external preset first driving line.
Effective effect of above-mentioned compensation device are as follows:
The present invention can be by default after control thin film transistor (TFT) conducting by a kind of compensation device of pixel circuit First voltage signal output end change thin film transistor (TFT) signal input part voltage value size, to change thin film transistor (TFT) The voltage value of signal output end, and then change the voltage at the both ends C1 and C2, it enables to the voltage of each pixel identical, solves Since the threshold voltage of the thin film transistor (TFT) in each sub-pix is all different, the electric current generated is caused to still suffer from difference It is different, cause the non-uniform problem of Display panel;And above-mentioned thin film transistor (TFT) is arranged outside the area AA, will not influence liquid crystal surface The display effect of plate.
The present invention also provides a kind of compensation methodes of compensation device, comprising the following steps:
S1: make the first metal-oxide-semiconductor and thin film transistor (TFT) in the conductive state in preset first time period, and make third Metal-oxide-semiconductor is in off state;
S2: in preset second time period after first time period, it is in the first metal-oxide-semiconductor and third metal-oxide-semiconductor On state makes thin film transistor (TFT) be in off state, and makes the threshold value electricity of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends Pressure;
S3: in preset third period after second time period, making the first metal-oxide-semiconductor work in saturation region, and Third metal-oxide-semiconductor and thin film transistor (TFT) is set to be in off state;
S4: after the third period, the first metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, and make the 3rd MOS Manage it is in the conductive state, with complete pixel circuit voltage data compensation.
Above-mentioned compensation method has the beneficial effect that
A kind of compensation method for the compensation device provided by the invention, makes first in preset first time period Metal-oxide-semiconductor and thin film transistor (TFT) are in the conductive state, and third metal-oxide-semiconductor is made to be in off state, after first time period In preset second time period, keep the first metal-oxide-semiconductor and third metal-oxide-semiconductor in the conductive state, while is in thin film transistor (TFT) and cutting Only state, and make the threshold voltage of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends, so that pixel is in normal work Voltage is fixed;And in preset third period after second time period, the first metal-oxide-semiconductor is made to work in saturation region, And third metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, so that pixel circuit eliminates threshold voltage shift and OLED The influence of aging makes the first metal-oxide-semiconductor and thin film transistor (TFT) be in off state, and make third metal-oxide-semiconductor after carrying out above-mentioned steps In the conductive state, i.e. the voltage data compensation of completion pixel circuit can be improved LCD panel display effect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram according to a kind of compensation device of pixel circuit of the embodiment of the present invention;
Fig. 2 is the key step schematic diagram according to a kind of compensation method of the embodiment of the present invention;
Fig. 3 is the structural schematic diagram according to the compensation device of one of the embodiment of the present invention two pixel circuit;
Label declaration:
1, thin film transistor (TFT);2, the first metal-oxide-semiconductor;3, the second metal-oxide-semiconductor;4, third metal-oxide-semiconductor;
5, diode;6, liquid crystal capacitance;7, storage capacitors;8, voltage output end is pulled up;9, actuation voltage output end;10, First voltage signal output end;11, second voltage signal output end;12, the first driving line;13, the second driving line;14, third Drive line.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached Figure is explained in detail.
The design of most critical of the present invention are as follows: the signal output end of each thin film transistor (TFT) is corresponding with the thin film transistor (TFT) The connecting pin of pixel circuit connects, and connecting pin is liquid crystal capacitance C1 and storage capacitors C2 in pixel circuit far from the public of metal-oxide-semiconductor End, signal input part are connect with external preset first voltage signal output end, driving end and external preset first driving line Connection.
Fig. 1 is please referred to, the present invention provides a kind of compensation devices of pixel circuit, including the sub-pix pair in liquid crystal display panel The pixel circuit answered and the thin film transistor (TFT) being arranged in outside the area liquid crystal display panel AA;
Each thin film transistor (TFT) includes signal input part, signal output end and driving end;Each thin film transistor (TFT) The connecting pin of signal output end pixel circuit corresponding with the thin film transistor (TFT) connects, and the connecting pin is liquid crystal in pixel circuit The common end of capacitor C1 and storage capacitors C2 far from metal-oxide-semiconductor, the signal input part and external preset first voltage signal are defeated Outlet connection, the driving end are connect with external preset first driving line.
As can be seen from the above description, a kind of compensation device of the present invention by pixel circuit, control thin film transistor (TFT) conducting Afterwards, the size that the voltage value of thin film transistor (TFT) signal input part can be changed by preset first voltage signal output end, from And change the voltage value of thin film transistor (TFT) signal output end, and then change the voltage at the both ends C1 and C2, enable to each picture The voltage of element is identical, solves since the threshold voltage of the thin film transistor (TFT) in each sub-pix is all different, causes to generate Electric current still suffer from difference, cause the non-uniform problem of Display panel;And above-mentioned thin film transistor (TFT) is arranged outside the area AA, It will not influence the display effect of liquid crystal display panel.
Further, the thin film transistor (TFT) is N-channel MOS pipe, and the input terminal is the source electrode of metal-oxide-semiconductor, the output End is the drain electrode of metal-oxide-semiconductor, and the driving end is the grid of metal-oxide-semiconductor.
As can be seen from the above description, being shown by the driving that the metal-oxide-semiconductor of N-channel is capable of valid pixel circuit.
Further, the pixel circuit includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor and diode;
The grid of first metal-oxide-semiconductor with it is preset second driving line connect, the source electrode of first metal-oxide-semiconductor with it is preset The drain electrode of the connection of second voltage signal output end, first metal-oxide-semiconductor connects with one end of the grid of the second metal-oxide-semiconductor and C1 respectively It connects;
The grid of the third metal-oxide-semiconductor and preset third driving line are connect, the source electrode of the third metal-oxide-semiconductor with it is preset Voltage output end OVDD connection is pulled up, the drain electrode of the third metal-oxide-semiconductor is connect with the source electrode of the second metal-oxide-semiconductor;
One end of the C2 is connect with OVDD, the leakage with the other end of C1, the second metal-oxide-semiconductor respectively of the other end of the C2 The anode connection of pole, signal output end and diode;The cathode of the diode and preset actuation voltage output end OVSS connect It connects.
As can be seen from the above description, the quantity of metal-oxide-semiconductor in pixel circuit can be reduced by above structure, it can be in AA pixel Area designs more pixels, improves panel PPI, makes Display panel better effect.
Further, first metal-oxide-semiconductor, the second metal-oxide-semiconductor and third metal-oxide-semiconductor are N-channel MOS pipe.
As can be seen from the above description, can effectively realize the switch drive control of the area AA pixel circuit by above structure.
Further, on liquid crystal display panel the corresponding pixel circuit of all sub-pixes of every a line with a film crystal Manage corresponding, the company of the signal output end of thin film transistor (TFT) all pixels circuit corresponding with the thin film transistor (TFT) respectively Connect end connection.
As can be seen from the above description, being arranged by above structure, so that the corresponding pixel circuit of all sub-pixes of every a line It only needs to be controlled by a thin film transistor (TFT), the compensation of the corresponding pixel circuit of all sub-pixes of the row can be realized, Thin film transistor (TFT) required for compensation is reduced, production cost is reduced, saves the use space on liquid crystal display panel.
Referring to figure 2., the present invention also provides a kind of compensation methodes for above-mentioned compensation device, comprising the following steps:
S1: make the first metal-oxide-semiconductor and thin film transistor (TFT) in the conductive state in preset first time period, and make third Metal-oxide-semiconductor is in off state;
S2: in preset second time period after first time period, it is in the first metal-oxide-semiconductor and third metal-oxide-semiconductor On state makes thin film transistor (TFT) be in off state, and makes the threshold value electricity of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends Pressure;
S3: in preset third period after second time period, making the first metal-oxide-semiconductor work in saturation region, and Third metal-oxide-semiconductor and thin film transistor (TFT) is set to be in off state;
S4: after the third period, the first metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, and make the 3rd MOS Manage it is in the conductive state, with complete pixel circuit voltage data compensation.
A kind of compensation method for the compensation device provided by the invention, makes first in preset first time period Metal-oxide-semiconductor and thin film transistor (TFT) are in the conductive state, and third metal-oxide-semiconductor is made to be in off state, after first time period In preset second time period, keep the first metal-oxide-semiconductor and third metal-oxide-semiconductor in the conductive state, while is in thin film transistor (TFT) and cutting Only state, and make the threshold voltage of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends, so that pixel is in normal work Voltage is fixed;And in preset third period after second time period, the first metal-oxide-semiconductor is made to work in saturation region, And third metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, so that pixel circuit eliminates threshold voltage shift and OLED The influence of aging makes the first metal-oxide-semiconductor and thin film transistor (TFT) be in off state, and make third metal-oxide-semiconductor after carrying out above-mentioned steps In the conductive state, i.e. the voltage data compensation of completion pixel circuit can be improved the quality that liquid crystal display panel is shown.
Further, the end time point of the first time period is identical as the start time point of second time period, described The end time point of second time period is identical as the start time point of third period.
Further, after the S4 further include:
S5: controlling the voltage value of OVDD, and the corresponding sub-pix of pixel circuit is made to shine.
From upper description it is found that by after voltage compensation, the normal luminous of the corresponding sub-pix of pixel circuit can be realized.
Further, the S4 and S5 are performed simultaneously.
As can be seen from the above description, being performed simultaneously by S4 and S5, may be implemented to make to correspond to immediately after pixel circuit compensates Sub-pix normal luminous.
Further, the S1 specifically:
Line, first voltage signal output end and second are driven by changing the first driving line, the second driving line, third respectively The voltage value of voltage signal output end makes the first metal-oxide-semiconductor and thin film transistor (TFT) be on shape in preset first time period State, and third metal-oxide-semiconductor is made to be in off state.
As can be seen from the above description, the first metal-oxide-semiconductor and thin film transistor (TFT) can be made in the conductive state by the above method, And third metal-oxide-semiconductor is made to be in off state.
Please refer to Fig. 1, the embodiment of the present invention one are as follows:
The present invention provides a kind of compensation devices of pixel circuit, including the corresponding pixel electricity of sub-pix in liquid crystal display panel Road and the thin film transistor (TFT) 1 being arranged in outside the area liquid crystal display panel AA;
Each thin film transistor (TFT) 1 includes signal input part, signal output end and driving end;Each thin film transistor (TFT) 1 Signal output end pixel circuit corresponding with the thin film transistor (TFT) 1 connecting pin connection, the connecting pin be pixel circuit in The common end of liquid crystal capacitance 6 (C1) and storage capacitors 7 (C2) far from metal-oxide-semiconductor, the signal input part and outside preset first Voltage signal output end 10 connects, and the driving end is connect with external preset first driving line 12;The thin film transistor (TFT) 1 is N-channel MOS pipe, the input terminal are the source electrode of metal-oxide-semiconductor, and the output end is the drain electrode of metal-oxide-semiconductor, and the driving end is metal-oxide-semiconductor Grid;
The pixel circuit includes the first metal-oxide-semiconductor 2, the second metal-oxide-semiconductor 3, third metal-oxide-semiconductor 4 and diode 5;The diode 5 For Organic Light Emitting Diode;
The grid of first metal-oxide-semiconductor 2 with it is preset second driving line 13 connect, the source electrode of first metal-oxide-semiconductor 2 in advance If second voltage signal output end 11 connect, the drain electrode of first metal-oxide-semiconductor 2 respectively with 3 grid of the second metal-oxide-semiconductor and C1 one End connection;
The grid of the third metal-oxide-semiconductor 4 and preset third driving line 14 connects, the source electrode of the third metal-oxide-semiconductor 4 in advance If the 8OVDD connection of pull-up voltage output end, the drain electrode of the third metal-oxide-semiconductor 4 connect with 3 source electrode of the second metal-oxide-semiconductor;
One end of the C2 is connect with OVDD, the leakage with the other end of C1, the second metal-oxide-semiconductor 3 respectively of the other end of the C2 The anode connection of pole, signal output end and diode 5;The cathode of the diode 5 and preset actuation voltage output end 9OVSS Connection;First metal-oxide-semiconductor 2, the second metal-oxide-semiconductor 3 and third metal-oxide-semiconductor 4 are N-channel MOS pipe;Every a line on liquid crystal display panel The corresponding pixel circuit of all sub-pixes is corresponding with a thin film transistor (TFT) 1, the signal output of a thin film transistor (TFT) 1 Hold the connecting pin connection of all pixels circuit corresponding with the thin film transistor (TFT) 1 respectively.
Referring to figure 2., the embodiment of the present invention two are as follows:
The present invention provides a kind of compensation methodes for compensation device described in embodiment one, comprising the following steps:
S1: make the first metal-oxide-semiconductor and thin film transistor (TFT) in the conductive state in preset first time period, and make third Metal-oxide-semiconductor is in off state;
Wherein, the S1 specifically:
Line, first voltage signal output end and second are driven by changing the first driving line, the second driving line, third respectively The voltage value of voltage signal output end makes the first metal-oxide-semiconductor and thin film transistor (TFT) be on shape in preset first time period State, and third metal-oxide-semiconductor is made to be in off state.VC1=VGS=Vref-Vreset at this time, wherein VC1 indicates the both ends C1 electricity Pressure, VGS indicate the voltage between GS two o'clock, and G, S point are as shown in figure 3, Vref indicates the electricity of second voltage signal output end at this time Pressure value, the specific size of the voltage value of second voltage signal output end only needs that the first metal-oxide-semiconductor is connected at this time, Vreset Indicate the voltage value of first voltage signal output end at this time, the voltage value of first voltage signal output end only needs to make film at this time Transistor turns, and VG=Vref, VS=Vreset can be released;Wherein, VG indicates the voltage between G point and ground wire, VS Indicate the voltage between S point and ground wire.
S2: in preset second time period after first time period, it is in the first metal-oxide-semiconductor and third metal-oxide-semiconductor On state makes thin film transistor (TFT) be in off state, and makes the threshold value electricity of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends Pressure;
Wherein, need to acquire the threshold voltage vt h of the second metal-oxide-semiconductor before execution S2;
Wherein, the S2 specifically:
Line and first voltage signal output end are driven by adjusting the first driving line, the second driving line, third, at first Between in preset second time period after section, keep the first metal-oxide-semiconductor and third metal-oxide-semiconductor in the conductive state, make film crystal Pipe is in off state, and makes the threshold voltage of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends;VG=Vref at this time, VS =Vref-Vth;
S3: in preset third period after second time period, making the first metal-oxide-semiconductor work in saturation region, and Third metal-oxide-semiconductor and thin film transistor (TFT) is set to be in off state;
Wherein, the S3 specifically:
Line, first voltage signal output end and second voltage are driven by adjusting the first driving line, the second driving line, third The voltage value of signal output end works in the first metal-oxide-semiconductor full in preset third period after second time period And area, and third metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state;
At this point, the voltage value of second voltage signal output end is VData, i.e., the input voltage of G point is under current state For the voltage variety of VData, G point by capacitor C1, the influence of C2 is converted into S point voltage variety.VG=VData at this time, VS=Vref-Vth+ △ V, △ V=C1/ (C1+C2) (VData-Vref), the C1 in formula indicate the capacitance of liquid crystal capacitance, The capacitance of C2 expression storage capacitors;
S4: after the third period, the first metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, and make the 3rd MOS Manage it is in the conductive state, with complete pixel circuit voltage data compensation;
Wherein, the end time point of the first time period is identical as the start time point of second time period, and described second The end time point of period is identical as the start time point of third period.
Wherein, the first time period, second time period and third period are 2us~200us.
S5: controlling the voltage value of OVDD, and the corresponding sub-pix of pixel circuit is made to shine;
Wherein, the S4 and S5 are performed simultaneously.
Wherein, OVDD is written, and so that pixel circuit is fed stabling current makes OLED shine.VG=VData+VOVSS+ at this time VOLED-(Vref-Vth+ △ V), VS=VOLED+OVSS, VOVSS indicate the voltage at the end OVSS;The VOLED is two pole The voltage at pipe both ends, as Organic Light Emitting Diode (OLDE) both end voltage.
So electric current of OLED is as follows:
IOLED=1/2K (VGS-VTH)2;By VGS=VG-VS substitute into formula must under:
IOLED=1/2K [(1-a) (VDATA-Vref)]2;A=C1/ (C1+C2);K=μnCOXW/L;
(note μ n is field-effect mobility, COXFor the capacitive dielectric layer of unit area;W/L is TFT channel width/height);
It will be seen that OLED current is only related with VDATAT and Vref from OLED glow current formula, other parameters are relatively solid It is fixed;And compensation circuit has eliminated the problem of Vth drift and OLED aging, has reached the mesh of pixel circuit compensation of the invention 's.
In conclusion a kind of compensation device of the present invention by pixel circuit can after control thin film transistor (TFT) conducting The size for changing the voltage value of thin film transistor (TFT) signal input part by preset first voltage signal output end, to change thin The voltage value of film transistor signal output end, and then change the voltage at the both ends C1 and C2, enable to the voltage of each pixel It is identical, solve the electric current for causing to generate since the threshold voltage of the thin film transistor (TFT) in each sub-pix is all different still So can be variant, cause the non-uniform problem of Display panel;And above-mentioned thin film transistor (TFT) is arranged outside the area AA, can't shadow Ring the display effect of liquid crystal display panel.A kind of compensation method for the compensation device provided by the invention, preset first Make the first metal-oxide-semiconductor and thin film transistor (TFT) in the conductive state in period, and third metal-oxide-semiconductor is made to be in off state, first In preset second time period after period, keep the first metal-oxide-semiconductor and third metal-oxide-semiconductor in the conductive state, while making thin Film transistor is in off state, and makes the threshold voltage of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends, so that pixel Voltage in normal work is fixed;And in preset third period after second time period, make the first metal-oxide-semiconductor Saturation region is worked in, and third metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, so that pixel circuit eliminates threshold value electricity The influence of pressure drift and OLED aging makes the first metal-oxide-semiconductor and thin film transistor (TFT) be in off state after carrying out above-mentioned steps, And keeping third metal-oxide-semiconductor in the conductive state, i.e. the voltage data compensation of completion pixel circuit can be improved what liquid crystal display panel was shown Quality.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in other relevant technical fields, similarly It is included within the scope of the present invention.

Claims (10)

1. a kind of compensation device of pixel circuit, which is characterized in that including the corresponding pixel circuit of sub-pix in liquid crystal display panel With the thin film transistor (TFT) being arranged in outside the area liquid crystal display panel AA;
Each thin film transistor (TFT) includes signal input part, signal output end and driving end;The signal of each thin film transistor (TFT) The connecting pin of output end pixel circuit corresponding with the thin film transistor (TFT) connects, and the connecting pin is liquid crystal capacitance in pixel circuit The common end of C1 and storage capacitors C2 far from metal-oxide-semiconductor, the signal input part and external preset first voltage signal output end Connection, the driving end are connect with external preset first driving line.
2. a kind of compensation device of pixel circuit according to claim 1, which is characterized in that the thin film transistor (TFT) is N Channel MOS tube, the input terminal are the source electrode of metal-oxide-semiconductor, and the output end is the drain electrode of metal-oxide-semiconductor, and the driving end is metal-oxide-semiconductor Grid.
3. a kind of compensation device of pixel circuit according to claim 2, which is characterized in that the pixel circuit includes the One metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor and diode;
The grid of first metal-oxide-semiconductor is connect with preset second driving line, the source electrode of first metal-oxide-semiconductor and preset second Voltage signal output end connection, the drain electrode of first metal-oxide-semiconductor are connect with one end of the grid of the second metal-oxide-semiconductor and C1 respectively;
The grid of the third metal-oxide-semiconductor is connect with preset third driving line, the source electrode of the third metal-oxide-semiconductor and preset pull-up The drain electrode of voltage output end OVDD connection, the third metal-oxide-semiconductor is connect with the source electrode of the second metal-oxide-semiconductor;
One end of the C2 is connect with OVDD, the other end of the C2 respectively with the other end of C1, the second metal-oxide-semiconductor drain electrode, letter The anode connection of number output end and diode;The cathode of the diode is connect with preset actuation voltage output end OVSS.
4. a kind of compensation device of pixel circuit according to claim 3, which is characterized in that first metal-oxide-semiconductor, second Metal-oxide-semiconductor and third metal-oxide-semiconductor are N-channel MOS pipe.
5. a kind of compensation device of pixel circuit according to claim 1, which is characterized in that be located at each on liquid crystal display panel All corresponding pixel circuits of sub-pix of row are corresponding with a thin film transistor (TFT), the signal output of a thin film transistor (TFT) Hold the connecting pin connection of all pixels circuit corresponding with the thin film transistor (TFT) respectively.
6. a kind of compensation method for compensation device as described in claim 3 or 4, which comprises the following steps:
S1: making the first metal-oxide-semiconductor and thin film transistor (TFT) in the conductive state in preset first time period, and makes third metal-oxide-semiconductor In off state;
S2: in preset second time period after first time period, it is on the first metal-oxide-semiconductor and third metal-oxide-semiconductor State makes thin film transistor (TFT) be in off state, and makes the threshold voltage of second metal-oxide-semiconductor of voltage at liquid crystal capacitance both ends;
S3: in preset third period after second time period, making the first metal-oxide-semiconductor work in saturation region, and makes Three metal-oxide-semiconductors and thin film transistor (TFT) are in off state;
S4: after the third period, the first metal-oxide-semiconductor and thin film transistor (TFT) is made to be in off state, and make at third metal-oxide-semiconductor In on state, to complete the voltage data compensation of pixel circuit.
7. compensation method according to claim 6, which is characterized in that the end time point of the first time period and second The start time point of period is identical, the end time point and the start time point phase of third period of the second time period Together.
8. compensation method according to claim 7, which is characterized in that after the S4 further include:
S5: controlling the voltage value of OVDD, and the corresponding sub-pix of pixel circuit is made to shine.
9. compensation method according to claim 8, which is characterized in that the S4 and S5 are performed simultaneously.
10. compensation method according to claim 6, which is characterized in that the S1 specifically:
Line, first voltage signal output end and second voltage are driven by changing the first driving line, the second driving line, third respectively The voltage value of signal output end makes the first metal-oxide-semiconductor and thin film transistor (TFT) in the conductive state in preset first time period, and Third metal-oxide-semiconductor is set to be in off state.
CN201811635105.9A 2018-12-29 2018-12-29 A kind of compensation device and compensation method of pixel circuit Pending CN109616063A (en)

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CN114999399A (en) * 2022-06-30 2022-09-02 惠科股份有限公司 Pixel driving circuit, display panel and display device

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CN104036729A (en) * 2014-06-09 2014-09-10 京东方科技集团股份有限公司 Pixel driving circuit and driving method thereof as well as display device
CN106205494A (en) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 AMOLED pixel-driving circuit and image element driving method
US20180047336A1 (en) * 2016-08-12 2018-02-15 Hon Hai Precision Industry Co., Ltd. Display apparatus
CN108717842A (en) * 2018-05-31 2018-10-30 昆山国显光电有限公司 Pixel circuit and its driving method, organic electroluminescence device, display device

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Publication number Priority date Publication date Assignee Title
CN102222468A (en) * 2011-06-23 2011-10-19 华南理工大学 Alternating-current pixel driving circuit and method for active organic light-emitting diode (OLED) display
CN104036729A (en) * 2014-06-09 2014-09-10 京东方科技集团股份有限公司 Pixel driving circuit and driving method thereof as well as display device
US20180047336A1 (en) * 2016-08-12 2018-02-15 Hon Hai Precision Industry Co., Ltd. Display apparatus
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114999399A (en) * 2022-06-30 2022-09-02 惠科股份有限公司 Pixel driving circuit, display panel and display device
CN114999399B (en) * 2022-06-30 2023-05-26 惠科股份有限公司 Pixel driving circuit, display panel and display device
US11854488B1 (en) 2022-06-30 2023-12-26 HKC Corporation Limited Pixel driving circuit having a coupling capacitance and display panel thereof

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