CN109613773A - The restorative procedure of bad conducting wire in a kind of substrate - Google Patents
The restorative procedure of bad conducting wire in a kind of substrate Download PDFInfo
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- CN109613773A CN109613773A CN201910015375.8A CN201910015375A CN109613773A CN 109613773 A CN109613773 A CN 109613773A CN 201910015375 A CN201910015375 A CN 201910015375A CN 109613773 A CN109613773 A CN 109613773A
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- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000008439 repair process Effects 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 61
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000012423 maintenance Methods 0.000 abstract description 10
- 239000002699 waste material Substances 0.000 abstract description 4
- 201000004569 Blindness Diseases 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The present invention provides a kind of restorative procedure of bad conducting wire in substrate, belongs to field of display technology, can solve the problems, such as that the existing blindness repair line after maintenance of building bridge cannot effectively promote product yield.The restorative procedure of bad conducting wire in substrate of the invention, if first prediction repair this it is bad after repair line resistance, if the difference for repairing line resistance and the resistance of specified line of prediction can ultimately form qualified products after may determine that the bad reparation less than or equal to preset range；If prediction repair line resistance and specified line resistance difference be greater than preset range, may determine that this it is bad even if repair can not ultimately form qualified products, abandon to this undesirable reparation, can be to avoid the waste of repair materials.I.e. in this case increase prediction repair after conducting wire resistance the step of, no longer blindly to it is all it is bad repair, avoid non-essential reparation, be equivalent to the human and material resources for saving inessential reparation.
Description
Technical field
The invention belongs to field of display technology, and in particular to the restorative procedure of bad conducting wire in a kind of substrate.
Background technique
In the preparation process of array substrate, it usually will appear the phenomenon that broken string or various types of materials remain (Remain), these
Phenomenon can cause to disconnect or be shorted, for these phenomenons, the method that chemical vapor deposition (CVD) is generallyd use in technique,
The position for disconnecting or being shorted (the needing first to cut away both ends, formation disconnection of short circuit), which deposits, builds bridge, and is repaired, forms one and repair
Multiple line, to promote product yield.
At least there are the following problems in the prior art for inventor's discovery: subsequent flowing into after repairing there are many product bridge formation
The panel process stage will appear that X concealed wire (X-line) is bad, reason is that the resistance of patch cord after building bridge is bigger than normal, so that signal
Weaken, shows as a concealed wire under normally black mode.The resistance of patch cord after this blindness bridge formation maintenance is uncontrollable, not only product
Yield is not promoted effectively, increases human and material resources cost instead.
Summary of the invention
Aiming at the problem that repair line of the present invention after existing blindness builds bridge maintenance effectively cannot promote product yield, provide
The restorative procedure of bad conducting wire in a kind of substrate.
Solving technical solution used by present invention problem is:
The restorative procedure of bad conducting wire in a kind of substrate, comprising the following steps:
Predict the resistance value of the repair line after the bad conducting wire is repaired；
When the resistance value of the repair line of prediction and specified line resistance difference not within the predefined range when, abandon repairing；
When the resistance value of the repair line of prediction and specified line resistance difference within a predetermined range when, which is repaired
It is multiple.
Optionally, the substrate includes array substrate, and the bad conducting wire includes grid line, data line, in public electrode
Any one, it is described it is bad include that grid line broken string, data line and grid line are shorted, data line and public electrode wire are shorted, material
Any one during data line caused by residual is bad.
Optionally, the restorative procedure is including the use of building bridge the normal wires of the two sides of bad position in bad conducting wire
Electrical connection, described prediction bad conducting wire repair after repair line resistance value the following steps are included:
Predict the size for the bridge formation that faulty restoration conducting wire needs；
According to the size of the bridge formation of prediction, the resistance value of the repair line after the bad conducting wire is repaired is calculated.
Optionally, the bad conducting wire consists of metal.
Optionally, the bridge formation is formed by way of laser deposition tungsten powder.
Optionally, the size for the bridge formation that the bad conducting wire of prediction needs includes predicting the length of the bridge formation, described
The length of bridge formation is the size built bridge on the bad conducting wire extending direction.
Optionally, the size for the bridge formation that the bad conducting wire of prediction needs includes predicting the span of the bridge formation, described
The span of bridge formation be build bridge the bad conducting wire be parallel to face where substrate and perpendicular on the bad conducting wire extending direction
Size.
Optionally, the size for the bridge formation that the bad conducting wire of prediction needs includes predicting the thickness of the bridge formation, described
Build bridge with a thickness of build bridge perpendicular to the size on orientation substrate.
Optionally, the resistance value of the repair line and the difference of specified line resistance are up to R, the minimum value of the length of bridge formation
For L, the minimum value of the span of bridge formation is H, and the resistivity for constituting the material of bridge formation is ρ, and the maximum value of the thickness of bridge formation is d, frame
The line width maximum value of bridge is w；The resistance of unit length normal wires is RX；
IfThen the bad conducting wire is repaired.
Detailed description of the invention
Fig. 1 is the flow diagram of the restorative procedure of bad conducting wire in the substrate of the embodiment of the present invention 1；
Fig. 2, Fig. 3 are the reparation structural schematic diagram of bad conducting wire in the substrate of the embodiment of the present invention 2；
Fig. 4 is that the bridge formation in the substrate of the embodiment of the present invention 3 in the restorative procedure of bad conducting wire predicts schematic diagram；
Fig. 5 is the schematic diagram of the bad conducting wire of the embodiment of the present invention 3；
Fig. 6 be the embodiment of the present invention 3 reparation after bridge formation thickness schematic diagram；
Wherein, appended drawing reference are as follows: 1, bad conducting wire；11, bad position；12, normal wires；2, it builds bridge.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
Embodiment 1:
The present embodiment provides a kind of restorative procedures of bad conducting wire in substrate, as shown in Figure 1, comprising the following steps:
S01, the resistance value for predicting the repair line after the bad conducting wire is repaired；
S02, when the resistance value of the repair line of prediction and specified line resistance difference not within the predefined range when, abandon repairing
It is multiple；When the resistance value of the repair line of prediction and the difference of specified line resistance within a predetermined range when, which is carried out
It repairs.
The restorative procedure of bad conducting wire in the substrate of the present embodiment, if first prediction repair this it is bad after repair line electricity
Resistance, if prediction repair line resistance and the difference of specified line resistance is less than or equal to preset range, may determine that this bad is repaired
Qualified products can be ultimately formed after multiple；If the difference that line resistance and specified line hinder of repairing of prediction is greater than preset range,
May determine that this it is bad can not ultimately form qualified products repairing, abandon to this undesirable reparation, can be to avoid
The waste of repair materials.That is, the step of increasing the resistance of conducting wire after prediction is repaired in the present embodiment, no longer blindly to institute
Have it is bad repaired, avoid non-essential reparation, be equivalent to the human and material resources for saving inessential reparation.
Embodiment 2:
The present embodiment provides a kind of restorative procedures of bad conducting wire in substrate, wherein the substrate in the present embodiment can be
Show that the substrate in product or touch-control product, the present embodiment are illustrated by taking array substrate as an example, specifically, bad conducting wire can be with
Grid line, data line, any one in public electrode wire, the other leads being also possible in array substrate, it is described it is bad can
To be that grid line broken string, data line and grid line are shorted, data line and public electrode wire are shorted, it is remaining caused short to be also possible to material
It connects.
Wherein, it should be noted that data line is bad can to show as X-Line in MDL (display module) later period；Grid line
Bad show in the later period can be bad for the thin line of Y-；If it is common electrode line breaking, since public electrode is reticular structure, institute
It may not cause significantly to show with common electrode line breaking bad.
The specific material for constituting bad conducting wire is not defined in the present embodiment, it is common to can be conducting wire in array substrate
Material, such as its can be metal composition bad conducting wire.Optionally, the bad conducting wire is made of aluminium or copper.
Wherein, there are many ways to bad conducting wire being repaired, for example, can directly connect the both ends of broken string,
The both ends of broken string are electrically connected by the conductor material that can use other layers on substrate by way of via hole.As the present embodiment
A kind of optinal plan, the restorative procedure in the present embodiment, as shown in Fig. 2, using building bridge 2 for bad position in bad conducting wire 1
The normal wires 12 of 11 two sides are electrically connected.
The material of bridge formation 2 is not defined in the present embodiment, usually can according to need the material of the bad conducting wire 1 of reparation
Material, size, the resistivity of the bad conducting wire 1 for needing to repair, and form the corresponding conductive material of process choice of bridge formation 2.It can
Choosing, the bridge formation 2 are formed by way of laser deposition tungsten powder.
The restorative procedure of the present embodiment the following steps are included:
S01, the resistance value for predicting the repair line after the bad conducting wire 1 is repaired；As the optional reality of one of the present embodiment
Apply scheme, the prediction bad conducting wire 1 repair after repair line resistance value the following steps are included:
The size for the bridge formation 2 that S01a, prediction faulty restoration conducting wire 1 need；
In one embodiment, the size for the bridge formation 2 that the bad conducting wire 1 of prediction needs includes predicting the bridge formation 2
Length, the length of the bridge formation 2 are 2 size on bad 1 extending direction of conducting wire of building bridge.
Wherein, it in face of certain bad conducting wire 1, in repairing operation, in order to be electrically connected the both ends of bad position 11, needs
The length of bridge formation 2 is selected, it, can not be effectively electric by the both ends of bad position 11 if the length of bridge formation 2 is too small
Connection；And if the length built bridge is too big, not only be easy to cause the waste of bridging materials, also results in the resistance deviation of repair line too
Greatly.
In one embodiment, the size for the bridge formation that the bad conducting wire 1 of the prediction needs include predict the bridge formation across
Degree, the span of the bridge formation be build bridge be parallel to substrate in the bad conducting wire 1 where face and perpendicular to bad conducting wire 1 extension
Size on direction.
It is understood that the minimum span built bridge needed for bad conducting wire 1 is not in different substrate or different application scene
Together, if the span built bridge is too small, other components on other conducting wires or substrate may be damaged in repair process, after causing reparation
Product still can not normal use.If the span built bridge is too big, it is also be easy to cause the waste of bridging materials, also results in reparation
The resistance deviation of line is too big.
In one embodiment, the size for the bridge formation that the bad conducting wire 1 of prediction needs includes predicting the thickness of the bridge formation
Degree, the bridge formation with a thickness of build bridge perpendicular to the size on orientation substrate.
That is, after choosing the length of bridge formation, can span to bridge formation and thickness selected or adjusted.With
Make the resistance deviation of the conducting wire after repairing in a certain range.
S01b, according to the size for the bridge formation predicted in above-mentioned steps, calculate the electricity of the repair line after the bad conducting wire 1 is repaired
Resistance value.
The resistance value of conducting wire, simple and convenient after being repaired in the present embodiment according to bridge formation size prediction.
S02, when the resistance value of the repair line of prediction and specified line resistance difference not within the predefined range when, abandon repairing
It is multiple；When the resistance value of the repair line of prediction and the difference of specified line resistance within a predetermined range when, which is carried out
It repairs.
The resistance value of repair line and the difference of specified line resistance X-Line can not be occurred with reference product and permitted in the present embodiment
Perhaps the maximum value of line resistance, such as the difference resistance of 43 cun full HD (43FHD) display products is 200 Ω.
Specifically, as shown in figure 3, the resistance value of the repair line and the difference of specified line resistance are up to R, required bridge formation 2
Length minimum value be L, build bridge 2 span minimum value be H, constitute build bridge 2 material resistivity be ρ, build bridge 2 thickness
The maximum value of degree is d, and the line width of bridge formation is w；The resistance of unit length normal wires 12 is RX；
IfThen the bad conducting wire 1 is repaired, otherwise, it is not necessary to repair.It needs
Bright, the unit length in the present embodiment refers to certain length for a reference length, such as can be using 1 μm as singly
Bit length, then the resistance of unit length normal wires 12 just refers to the resistance value of 1 μm of normal wires 12.
In one embodiment, the resistance that unit length is built bridge is Rq, can be according to the resistance value of repair line and specified line
The difference R of resistance, the minimum value H of the span of bridge formation, the resistance of unit length normal wires 12 are RX；It calculates admissible bad
The maximum length L that position 11 allowsmax, wherein Rq(L+2H)-RX*Lmax< R.
That is, if the length L of bad position 11maxIt is more thanThen it can directly judge that this is bad
Conducting wire 1 is unable to get qualified products maintenance without maintenance.
Further, if the length of bad position 11 is not above Lmax, then in the L for allowing bridge formation maintenance lengthmaxIt is interior,
The maximum span H of bridge formationmaxNo more thanIf span is more than Hmax, qualified products are unable to get maintenance.
If the length of bad position 11 is close to Lmax, the least limit of maintenance bridge formation line width is wmin, then thickness d of building bridge needs small
In
Embodiment 3:
The present embodiment provides a kind of restorative procedure of bad conducting wire in substrate, which is 43 cun full HD (43FHD) aobvious
Show the array substrate of product, as shown in Figure 4, Figure 5, the position that dotted line encloses in Fig. 4 is bad position, arrows in Fig. 5
Position be to need the bad position built bridge.
In the known substrate normal data line line resistance Rx be generally 0.05 Ω/μm.The electricalresistivityρ of normal data line
For 2.07 Ω/μm, data line line width be 5 μm, data line is with a thickness of 400nm.
It is expected with deposition tungsten powder W (CO)6Mode, a wherein bad data line is repaired.It is expected that repair line
Resistance value and specified line resistance difference resistance be 200 Ω.The length measured between two punchings at 11 both ends of bad position is 46.87
μm。
It is calculated according to the prediction mode of above-described embodiment, decision criteria and above-mentioned given given data can obtain, should
The maximum length L of data line bad position 11maxBe 99 μm, 46.87 less than 99, therefore the bad data line can by build bridge into
Row is repaired.The two sides span of bridge formation is identical, and the span of every side is up to 25.09 μm, and two sides span value adds up to 50.18 μm；Two
Side span total value is less than 50.18 μm.It is 3 μm that the bridge formation that technique allows, which repairs limit line width, and deposition film thickness d need to be less than 338nm.And
As shown in figure 5, practical maintenance two sides overall width is 29.41+20.14=49.55, less than 50.18.Tungsten powder deposition width is 3.3 μ
M, as shown in fig. 6, deposition film thickness is 300nm, finally obtained difference resistance is 198.7 Ω, is less than scheduled 200 Ω, maintenance
Success.
Embodiment 4:
A kind of substrate is present embodiments provided, which can be used for display device or touch device, which includes above-mentioned
The bad conducting wire of any one method reparation.The display device can be with are as follows: liquid crystal display panel, Electronic Paper, oled panel, hand
Any product having a display function such as machine, tablet computer, television set, display, laptop, Digital Frame, navigator
Or component.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. the restorative procedure of bad conducting wire in a kind of substrate, which comprises the following steps:
Predict the resistance value of the repair line after the bad conducting wire is repaired；
When the resistance value of the repair line of prediction and specified line resistance difference not within the predefined range when, abandon repairing；When pre-
Survey the repair line resistance value and specified line resistance difference within a predetermined range when, which is repaired.
2. the restorative procedure of bad conducting wire in substrate according to claim 1, which is characterized in that the substrate includes array
Substrate, the bad conducting wire include grid line, data line, any one in public electrode wire, it is described it is bad include grid line broken string,
Data line and grid line be shorted, data line and any one during public electrode wire is shorted, data line caused by material residual is bad.
3. the restorative procedure of bad conducting wire in substrate according to claim 1, which is characterized in that the restorative procedure includes
The normal wires of the two sides of bad position in bad conducting wire are electrically connected using building bridge, after the prediction bad conducting wire is repaired
The resistance value of repair line the following steps are included:
Predict the size for the bridge formation that faulty restoration conducting wire needs；
According to the size of the bridge formation of prediction, the resistance value of the repair line after the bad conducting wire is repaired is calculated.
4. the restorative procedure of bad conducting wire in substrate according to claim 3, which is characterized in that the bad conducting wire is by gold
Belong to and constituting.
5. according to the restorative procedure of bad conducting wire in substrate as claimed in claim 3, which is characterized in that described build bridge is sunk by laser
The mode of product tungsten powder is formed.
6. the restorative procedure of bad conducting wire in substrate according to claim 3, which is characterized in that the bad conducting wire of prediction
The size of the bridge formation needed includes predicting the length of the bridge formation, and the length of the bridge formation is to build bridge in the bad conducting wire extension side
Upward size.
7. the restorative procedure of bad conducting wire in substrate according to claim 6, which is characterized in that the bad conducting wire of prediction
The size of the bridge formation needed includes predicting the span of the bridge formation, and the span of the bridge formation is to build bridge to be parallel in the bad conducting wire
Face where substrate and perpendicular to the size on the bad conducting wire extending direction.
8. the restorative procedure of bad conducting wire in substrate according to claim 7, which is characterized in that the bad conducting wire of prediction
The size of the bridge formation needed includes predicting the thickness of the bridge formation, the bridge formation with a thickness of build bridge on perpendicular to orientation substrate
Size.
9. the restorative procedure of bad conducting wire in substrate according to claim 8, which is characterized in that the resistance of the repair line
Value and the difference of specified line resistance are up to R, and the minimum value of the length of bridge formation is L, and the minimum value of the span of bridge formation is H, constitute frame
The resistivity of the material of bridge is ρ, and the maximum value of the thickness of bridge formation is d, and the line width maximum value of bridge formation is w；Unit length is normally led
The resistance of line is RX；
IfThen the bad conducting wire is repaired.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910015375.8A CN109613773B (en) | 2019-01-08 | 2019-01-08 | Method for repairing bad conducting wire in substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910015375.8A CN109613773B (en) | 2019-01-08 | 2019-01-08 | Method for repairing bad conducting wire in substrate |
Publications (2)
| Publication Number | Publication Date |
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| CN109613773A true CN109613773A (en) | 2019-04-12 |
| CN109613773B CN109613773B (en) | 2021-12-07 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101558508A (en) * | 2006-10-17 | 2009-10-14 | 夏普株式会社 | Substrate recovery system, substrate recovery method, program, and computer-readable recording medium |
| CN101598752A (en) * | 2009-05-14 | 2009-12-09 | 福建华映显示科技有限公司 | The real-time detection method of defect repairing of thin film transistor array circuit |
| US20100015763A1 (en) * | 2006-05-09 | 2010-01-21 | Chu-Yu Liu | Rescue structure and method for laser welding |
| JP2010081255A (en) * | 2008-09-25 | 2010-04-08 | Sharp Corp | Display apparatus and television system |
| CN105420694A (en) * | 2014-08-04 | 2016-03-23 | 上海和辉光电有限公司 | Monitoring device and method for laser chemical vapor deposition (LCVD) line growing and film forming repairing quality |
| JP2017135318A (en) * | 2016-01-29 | 2017-08-03 | 株式会社ブイ・テクノロジー | Wiring correction device of wiring board, method of manufacturing wiring board, wiring board, and display device |
-
2019
- 2019-01-08 CN CN201910015375.8A patent/CN109613773B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100015763A1 (en) * | 2006-05-09 | 2010-01-21 | Chu-Yu Liu | Rescue structure and method for laser welding |
| CN101558508A (en) * | 2006-10-17 | 2009-10-14 | 夏普株式会社 | Substrate recovery system, substrate recovery method, program, and computer-readable recording medium |
| JP2010081255A (en) * | 2008-09-25 | 2010-04-08 | Sharp Corp | Display apparatus and television system |
| CN101598752A (en) * | 2009-05-14 | 2009-12-09 | 福建华映显示科技有限公司 | The real-time detection method of defect repairing of thin film transistor array circuit |
| CN105420694A (en) * | 2014-08-04 | 2016-03-23 | 上海和辉光电有限公司 | Monitoring device and method for laser chemical vapor deposition (LCVD) line growing and film forming repairing quality |
| JP2017135318A (en) * | 2016-01-29 | 2017-08-03 | 株式会社ブイ・テクノロジー | Wiring correction device of wiring board, method of manufacturing wiring board, wiring board, and display device |
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| Publication number | Publication date |
|---|---|
| CN109613773B (en) | 2021-12-07 |
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