CN109608194B

CN109608194B - Lead zirconate titanate thick film ceramic and preparation method and application thereof

Info

Publication number: CN109608194B
Application number: CN201811526263.0A
Authority: CN
Inventors: 王世斌; 鲁圣国
Original assignee: Guangdong University of Technology
Current assignee: Guangdong University of Technology
Priority date: 2018-12-13
Filing date: 2018-12-13
Publication date: 2022-06-03
Anticipated expiration: 2038-12-13
Also published as: CN109608194A

Abstract

The invention belongs to the technical field of functional ceramics, and discloses lead zirconate titanate thick film ceramic and a preparation method and application thereof. The chemical general formula of the lead zirconate titanate thick film ceramic is Pb (Zr)_1‑xTi_x)O₃Wherein x is more than or equal to 0.45 and less than or equal to 0.5. The thick film ceramic has a room temperature dielectric constant of 700-1200, a dielectric loss of less than 2%, a thickness of 40-60 μm, and can bear an electric field strength of 0-200 kv/cm; the ceramic block has good temperature stability, good density, large dielectric constant and polarization strength, and can bear a large electric field relative to the ceramic block. The method comprises the steps of adding a specific binder, a plasticizer and a dispersant to prepare casting slurry, and preparing a thick film green body by a casting method to prepare the lead zirconate titanate thick film ceramic with controllable thickness. The thick film ceramic can be applied to the field of multilayer ferroelectric ceramic capacitors.

Description

Lead zirconate titanate thick film ceramic and preparation method and application thereof

Technical Field

The invention belongs to the technical field of functional ceramics, and particularly relates to lead zirconate titanate thick film ceramic and a preparation method and application thereof.

Background

Ferroelectrics are an extremely important dielectric functional material. With the development of scientific technology, the related research on ferroelectrics is increasingly deep. Wherein, to have ABO₃The perovskite structure is a typical ferroelectric oxide, which exhibits excellent electrical properties of ferroelectric, piezoelectric, dielectric, electrocaloric effects, and the like. Lead zirconate titanate (PbZrTiO)₃) Has excellent dielectric, piezoelectric and ferroelectric properties, and is widely used in multilayer ceramic capacitors, ferroelectric memories, sensors, electro-optical devices, etc.

In recent years, with the size reduction of electronic devices, thin film materials have become a focus of attention. However, from the research results, the electrical properties of the thin film material are much lower than those of the bulk material, and the application of the device is greatly inconvenient due to the thin film material having a thickness as low as the nanometer scale. Therefore, thick film materials are provided, which not only solve the problem of miniaturization of devices, but also solve the requirements of device performance and application. The tape casting method is a traditional method for preparing a large-area ceramic thick film, is successfully applied to the preparation of the ceramic thick film and is beneficial to the large-scale production of thick film products. It has common points with screen printing methods and many different places. The using process is that the prepared superfine ceramic powder is uniformly dispersed in the adjusted solvent to prepare the required slurry with uniform dispersion and proper fluidity. The solvent is generally composed of a binder, a plasticizer, a suspending agent, and the like. And then uniformly casting the prepared slurry on a conveying belt by using a scraper, adjusting the thickness of the thick film by adjusting the scraper, and finally preparing the required wet thick film with certain flexibility by processes of natural drying, curing and the like. Unlike the screen printing method, the slurry used in the casting method is required to have "standing properties", that is, the slurry stops flowing immediately after contacting the substrate material and rapidly adheres to the surface of the substrate. Therefore, the surface of the film is smooth and flat, and the film is fast solidified and formed in the air. Therefore, terpineol cannot be used as a solvent in preparing a slurry for a casting method, but a mixed solution of ethanol and butanone which can be rapidly volatilized is selected. Meanwhile, because the two methods have different requirements on the viscosity and the fluidity of the slurry, the granularity of the selected ceramic powder is also different. The common point is that the two methods can be used for preparing ceramic thick films with larger areas, and meanwhile, ceramic slurry with different components can be superposed in the thickness direction according to the design requirement to prepare special functional gradient materials. Besides, the casting method has the specific advantages that: in the preparation process of the layered material, the air holes in the wet thick film can be effectively reduced or even eliminated through the later hot-pressing lamination process. Tape casting also has certain disadvantages, the most important of which is that this thick film preparation method is not compatible with MEMS processes; secondly, the thick film process is complicated. One important application of single-layer thick film dielectric materials is as a component of MLCCs, which are commonly used electronic components, having a smaller volume than bulk ceramic but containing tens or hundreds of layers of dielectric, and the performance of which is significantly improved. Although the preparation and performance of MLCCs have been discussed in many papers, few researchers have conducted independent studies on single layer thick film dielectric materials. Thick film materials are typically several microns to several hundred microns thick and are prepared by methods including aerosol, ribbon, screen, and tape casting.

Disclosure of Invention

In order to solve the defects and shortcomings of the prior art, the invention provides lead zirconate titanate thick film ceramic. The thick film ceramic has a room temperature dielectric constant of 700-1200, a thickness of 40-60 μm, and can bear an electric field strength of 0-200 kv/cm; the ceramic block has good temperature stability, good density, large dielectric constant and polarization strength, and can bear a large electric field relative to the ceramic block.

The invention also aims to provide a preparation method of the lead zirconate titanate thick film ceramic. The method comprises the steps of adding a specific binder, a plasticizer and a dispersant to prepare casting slurry, and preparing a thick film green blank by a casting method to prepare the lead zirconate titanate thick film ceramic material with controllable thickness.

The invention also aims to provide application of the lead zirconate titanate thick film ceramic material.

The purpose of the invention is realized by the following technical scheme:

the lead zirconate titanate thick film ceramic has a chemical general formula of Pb (Zr)_1-xTi_x)O₃Wherein x is more than or equal to 0.45 and less than or equal to 0.5.

Preferably, the lead zirconate titanate thick film ceramic is Pb (Zr)_0.52Ti_0.48)O₃。

Preferably, the thickness of the lead zirconate titanate thick film ceramic is 40-60 μm.

The preparation method of the lead zirconate titanate thick film ceramic comprises the following specific steps:

s1, mixing PbO and ZrO₂、TiO₂Mixing, ball-milling, drying, sieving by a screen mesh, and calcining to obtain a sintered product A;

s2, ball-milling, drying and screening the sintered product obtained in the step S1 by using a screen to obtain powder B with uniform and fine particle size;

s3, dividing the dispersing agent, the binder and the solvent into two parts, mixing the powder B obtained in the step S2 with the dispersing agent A and the solvent A, and performing barreling I to obtain premixed slurry; adding a binder A, performing roll milling II, adding a dispersant B, a binder B, a solvent B and a plasticizer, and performing roll milling III to obtain uniform and stable casting slurry;

and S4, carrying out tape casting on the tape casting slurry to obtain a thick film green body, heating the thick film green body to 400 ℃ to remove the glue, then heating to 1100 ℃ and keeping the temperature II, heating to 1200 ℃ and keeping the temperature III for sintering, and then cooling along with the furnace to obtain the lead zirconate titanate thick film ceramic.

Preferably, the rotation speed of the ball milling in the step S1 is 250-350 r/min, the ball milling time is 20-24 h, the drying temperature is 60-80 ℃, and the drying time is 8-16 h; the aperture of the screen is 80-100 meshes, the calcining temperature is 800-1000 ℃, and the calcining time is 1-3 hours.

Preferably, the rotation speed of the ball milling in the step S2 is 250-350 r/min, and the ball milling time is 2-3 h; the drying temperature is 60-80 ℃, and the drying time is 6-10 h; the aperture of the screen is 80-100 meshes.

Preferably, in the step S3, the rotating speeds of the tumbling mill I, the tumbling mill II and the tumbling mill III are all 180-250 r/min, and the time of the tumbling mill I is 2-20 h; the tumbling mill II is carried out for 8-12 hours; the tumbling mill III lasts for 12-16 hours; the solvent A accounts for 80wt% of the powder B; the dispersant accounts for 2wt% of the mass of the powder B; the binder A accounts for 2-3 wt% of the powder B.

Preferably, the mass ratio of the powder B, the dispersant, the binder, the plasticizer and the solvent in step S3 is 1:0.02: (0.1-0.2): (0.03-0.05): (1-1.2); the solvent is a mixture of ethanol and/or butanone, and the mass ratio of the ethanol to the butanone is 1: (0.5 to 1); the binder is polyvinyl butyral or ethyl cellulose; the plasticizer is dioctyl phthalate; the dispersing agent is octyl phenol polyoxyethylene ether.

Preferably, the rotation speed of the casting in the step S4 is 0.21-0.23 r/min, and the temperature of the casting is 41-43 ℃; the viscosity of the casting slurry is 600-700 mpa · s; the heating rate of the heating I is 1-3 ℃/min, the glue discharging time is 4-6 h, the heating rate of the heating II and the heating rate of the heating III are both 8-12 ℃/min, the heat preservation time of the heating II is 4-6 h, and the heat preservation time of the heating III is 0.5-2 h.

The lead zirconate titanate thick film ceramic is applied to the field of multilayer ceramic capacitors.

Compared with the prior art, the invention has the following beneficial effects:

1. the surface of the green body of the tin-doped lead lanthanum zirconate titanate thick film prepared by the invention is flat and pore-free, the thickness of the green body after sintering is 40-60 mu m, and the green body can bear the electric field intensity of 0-200 kv/cm.

2. The room-temperature dielectric constant of the lead zirconate titanate thick film ceramic prepared by the invention is 700-1200, and the room-temperature dielectric loss is small.

3. The thickness-controllable lead zirconate titanate thick film ceramic prepared by the tape casting process has good compactness, obtains larger dielectric constant and polarization strength, and can bear larger electric field relative to a ceramic block body.

Drawings

FIG. 1 shows PbZr in examples 1 to 3_1-xTi_xO₃XRD pattern of ceramic powder.

FIG. 2 shows PbZr in examples 1 to 3_1-xTi_xO₃Local enlarged view of XRD pattern of ceramic powder in 42-47 degree diffraction peak.

FIG. 3 shows PbZr in examples 1 to 3_1-xTi_xO₃Scanning electron microscope photographs of the thick film ceramics.

FIG. 4 shows PbZr in examples 1 to 3_1-xTi_xO₃Dielectric constant and dielectric loss of thick films at room temperature.

FIG. 5 is a sample of a thick ceramic film cast in example 1.

FIG. 6 shows PbZr in example 1 under different electric fields_0.55Ti_0.45O₃Hysteresis loop of thick film.

FIG. 7 shows PbZr in example 2 under different electric fields_0.52Ti_0.48O₃Hysteresis loop of thick film.

FIG. 8 shows the results of example 3PbZr under different electric fields_0.50Ti_0.50O₃Hysteresis loop of thick film.

Detailed Description

The following examples are presented to further illustrate the present invention and should not be construed as limiting the invention. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art. Reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.

Reagents PbO, ZrO used in the examples₂、TiO₂Octyl phenol polyoxyethylene ether, polyvinyl butyral and dibutyl phthalate are all purchased from Shanghai Aladdin Biotechnology GmbH, and the purity is analytically pure; butanone was purchased from Guangzhou chemical reagent factory, and absolute ethanol was purchased from Tanzhou chemical reagent, Inc. of Tianjin.

Example 1

The lead zirconate titanate thick film ceramic of this example has the chemical formula: pb (Zr)_0.55Ti_0.45)O₃

1. 34.8327g of PbO and 10.2683g of ZrO were weighed by an electronic balance₂、5.4457g TiO₂Putting the weighed medicines into a ball milling tank, wherein the mass ratio of zirconium balls to raw materials to absolute ethyl alcohol in the tank is 6.5:1:0.6, the mass ratio of 5mm zirconium balls to 3mm zirconium balls in the ball milling tank is 1:1, the first ball milling time is 24 hours, then, preserving heat at 70 ℃ for 8 hours, drying, and then, sieving the raw materials with a 80-mesh sieve. And (3) preserving the heat of the uniformly mixed powder for 2 hours at 900 ℃ to obtain the pre-sintered powder.

2. And (2) ball-milling the presintered powder obtained in the step (1), wherein the ball-milling rotation speed is 250r/min, the ball-milling time is 24 hours, then, heat preservation is carried out at 70 ℃ for 8 hours, drying is carried out, and then, 80-mesh sieving is carried out, so as to obtain fine powder with uniform particle size.

3. And (3) adding 0.9g of dispersing agent (octyl phenol polyoxyethylene ether) and 40g of solvent (anhydrous ethanol and butanone in a mass ratio of 1: 1) into 50g of the fine powder prepared in the step (2). Then, ball milling is carried out for 24 hours at the rotating speed of 200r/min to obtain premixed slurry; and then adding 1.5g of binder (polyvinyl butyral) and carrying out ball milling for 10 hours at the rotating speed of 200r/min, then adding 18g of solvent, 4g of binder (polyvinyl butyral) and 2g of plasticizer (dibutyl phthalate) and carrying out ball milling for 12 hours at the rotating speed of 200r/min to obtain uniformly mixed casting slurry with the viscosity of 600-800 mpa & s.

4. And (3) finishing casting the casting slurry prepared in the step (3) on a casting machine, wherein the rotating speed of the casting machine is 0.21-0.23 r/min, and the temperature is controlled at 41-43 ℃. And sintering the pressed thick film green body in an air atmosphere, heating to 400 ℃ from room temperature at the heating rate of 1 ℃/min, preserving heat for 4 hours to finish binder removal, heating to 1100 ℃ at the heating rate of 10 ℃/min, preserving heat for 6 hours, continuing heating to 1200 ℃ at the heating rate of 10 ℃/min, preserving heat for half an hour, and cooling along with the furnace to obtain the compact-structure lead zirconate titanate thick film ceramic.

And (3) performance testing: the crystal structure of the sintered powder was measured using a japanese physical in-situ analysis type X-ray diffraction analyzer, as shown by a curve a in fig. 1. As can be seen from curve a in fig. 1, the sintered product prepared in this example is a lead zirconate titanate powder having a pure perovskite structure. FIG. 2 shows PbZr_1-xTi_xO₃FIG. 2 is a partial enlarged view of 42-47 diffraction peaks of the ceramic powder, showing that the component PbZr_0.55Ti_0.45O₃Belonging to the R phase, PbZr_0.52Ti_0.48O₃In the vicinity of MPB, belonging to the T phase, PbZr_0.50Ti_0.50O₃Belonging to the T phase.

The surface morphology of the lead zirconate titanate ceramic was observed using a scanning electron microscope of Hitachi S-3400 (II), as shown in FIG. 3 (a). As can be observed from fig. 3 (a): the obtained ceramic has uniform crystal grain size of about 1-2 μm, and the ceramic is compact in sintering. FIG. 4 shows the characteristic of the lead zirconate titanate thick film ceramic of relative dielectric constant and dielectric loss varying with frequency at room temperature measured by Hp 4284A impedance analyzer, and it can be seen from FIG. 4 that the thick film ceramic has a relative dielectric constant of 1000 to 1200 in the range of 1kHz to 1MHz and a dielectric loss of less than 2%. As the frequency increases, the dielectric constant of the ceramic decreases with increasing frequency, which is related to the dependence of the natural electric moment on the frequency of the electric field. The dielectric loss of the thick film ceramic is maintained at a very low level, indicating that the insulating properties are good. FIG. 5 shows the exampleThe ceramic thick film samples cast in the examples. It can be seen that the thick film sample prepared by tape casting has smooth and flat surface and good quality. The samples were tested for polarization characteristics under application of an electric field using the standard ferroelectric test system of us RADIANTRT-66A, as shown in figure 6. As can be seen from FIG. 6, PbZr_0.55Ti_0.45O₃The thick film shows the characteristic of typical electric hysteresis loop under different electric fields, the linear shape is relatively saturated, and the thick film can bear the electric field intensity of 200 kv/cm.

Example 2

The chemical formula of the lead zirconate titanate thick film ceramic is as follows: pb (Zr)_0.52Ti_0.48)O₃

1. 34.8327g of PbO and 9.7083g of ZrO were weighed by an electronic balance₂、5.8095g TiO₂Putting the weighed medicines into a ball milling tank, wherein the mass ratio of zirconium balls to raw materials to absolute ethyl alcohol in the tank is 6.5:1:0.6, the mass ratio of 5mm zirconium balls to 3mm zirconium balls in the ball milling tank is 1:1, the first ball milling time is 24 hours, then, keeping the temperature at 70 ℃ for 8 hours, drying, and then, sieving the raw materials with a 80-mesh sieve. And (3) preserving the heat of the uniformly mixed powder for 2 hours at 900 ℃ to obtain the pre-sintered powder.

2. Ball-milling the powder subjected to presintering in the step 1, wherein the ball-milling rotation speed is 250r/min, the ball-milling time is 24 hours, then, keeping the temperature at 70 ℃ for 8 hours, drying, and then, sieving by a 80-mesh sieve to obtain fine powder with uniform particle size.

4. And (3) finishing casting the casting slurry prepared in the step (3) on a casting machine, wherein the rotating speed of the casting machine is 0.21-0.23 r/min, and the temperature is controlled at 41-43 ℃. And sintering the pressed thick film green body in an air atmosphere, heating to 400 ℃ from room temperature at the heating rate of 1 ℃/min, preserving heat for 4 hours to finish binder removal, heating to 1100 ℃ at the heating rate of 10 ℃/min, preserving heat for 6 hours, continuing heating to 1200 ℃ at the heating rate of 10 ℃/min, preserving heat for half an hour, and cooling along with the furnace to obtain the lead zirconate titanate thick film ceramic with a compact structure.

And (3) performance testing: as can be seen from curve B in fig. 1, the sintered product prepared in this example is a lead zirconate titanate powder having a pure perovskite structure. As can be seen from FIG. 2, PbZr_0.52Ti_0.48O₃In the vicinity of MPB, it belongs to the T phase. The surface morphology of the lead zirconate titanate ceramic was observed using a scanning electron microscope of Hitachi S-3400 (II), and the results are shown in FIG. 3 (b). As can be observed in fig. 3 (b): the obtained ceramic has uniform crystal grain size of about 1-2 μm, and the ceramic is compact in sintering. The Hp 4284A impedance analyzer is used for testing the relative dielectric constant and the dielectric loss variation characteristic of the lead zirconate titanate thick film ceramic with frequency at room temperature, as shown in figure 4, the relative dielectric constant of the thick film ceramic is 800-1000 within the range of 1kHz-1MHz, and the dielectric loss is lower than 2%. As the frequency increases, the dielectric constant of the ceramic decreases with increasing frequency, which is related to the dependence of the natural electric moment on the frequency of the electric field. The dielectric loss of the thick film ceramic is maintained at a very low level, indicating that the insulating properties are good. The samples were tested for polarization characteristics under application of an electric field using the standard ferroelectric test system of us RADIANTRT-66A, as shown in figure 7. PbZr_0.52Ti_0.48O₃The thick film shows the characteristic of typical electric hysteresis loop under different electric fields, the line shape is relatively saturated, and the thick film can bear the electric field intensity of 240 kv/cm.

Example 3

The chemical formula of the lead zirconate titanate thick film ceramic is as follows: pb (Zr)_0.5Ti_0.5)O₃

1. 34.8327g of PbO and 9.3348g of ZrO were weighed by an electronic balance₂、6.0507g TiO₂Putting the weighed medicine into a ball milling tank, wherein the mass ratio of zirconium balls to raw materials to absolute ethyl alcohol in the tank is 6.5:1:0.6, the ball milling tank contains 5mm and 3mm zirconium balls in the mass ratio of 1:1, the first ball milling time is 24 hours, andthen preserving the heat for 8 hours at 70 ℃ and drying, and then sieving the raw materials by a sieve of 80 meshes. And (3) preserving the heat of the uniformly mixed powder for 2 hours at 900 ℃ to obtain the pre-sintered powder.

And (3) performance testing: as can be seen from curve c in fig. 1, the sintered product prepared in this example is a lead zirconate titanate powder having a pure perovskite structure. As can be seen from FIG. 2, PbZr_0.5Ti_0.5O₃Belonging to the T phase. The surface morphology of the lead zirconate titanate ceramic was observed by using a scanning electron microscope of Hitachi S-3400 (II), and the results are shown in FIG. 3 (c). As can be observed in fig. 3 (c): the obtained ceramic has uniform crystal grain size of about 1-2 μm, and the ceramic is compact in sintering. The relative dielectric constant and the dielectric loss variation characteristics with frequency of the lead zirconate titanate thick film ceramic at room temperature are tested by using an Hp 4284A impedance analyzer, and the relative dielectric constant of the thick film ceramic is in the range of 1kHz-1MHz as shown in figure 4600 to 800, and a dielectric loss of less than 2%. As the frequency increases, the dielectric constant of the ceramic decreases with increasing frequency, which is related to the dependence of the natural electric moment on the frequency of the electric field. The dielectric loss of the thick film ceramic is maintained at a very low level, indicating that the insulating properties are good. The samples were tested for polarization characteristics under application of an electric field using the standard ferroelectric test system of us RADIANTRT-66A, as shown in figure 8. PbZr_0.5Ti_0.5O₃The thick film shows the characteristic of typical electric hysteresis loop under different electric fields, the line shape is relatively saturated, and the thick film can bear the electric field intensity of 210 kv/cm.

The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations and simplifications are intended to be included in the scope of the present invention.

Claims

1. The lead zirconate titanate thick film ceramic is characterized by having a chemical general formula

Is Pb (Zr)_1-xTi_x）O₃Wherein x is more than or equal to 0.45 and less than or equal to 0.5, and the thickness of the lead zirconate titanate thick film ceramic is 40-60 mu m; the lead zirconate titanate thick film ceramic has a dielectric constant of 700-1200 at room temperature, dielectric loss of less than 2%, and crystal grains of 1-2 μm; the preparation method of the lead zirconate titanate thick film ceramic comprises the following specific steps:

s1, mixing PbO and ZrO₂、TiO₂Mixing, ball-milling, drying, sieving by a screen mesh, and calcining to obtain a sintered product;

s2, performing ball milling, drying and screening on the sintered product obtained in the step S1 by using a screen to obtain powder B with uniform and fine particle size;

s3, dividing the dispersing agent, the binder and the solvent into two parts, mixing the powder B obtained in the step S2 with the dispersing agent A and the solvent A, and performing barreling I to obtain premixed slurry; adding a binder A, performing roll milling II, adding a dispersant B, a binder B, a solvent B and a plasticizer, and performing roll milling III to obtain uniform and stable casting slurry; the solvent A accounts for 80wt% of the powder B; the dispersant accounts for 2wt% of the mass of the powder B; the binder A accounts for 2-3 wt% of the powder B; the mass ratio of the powder B to the dispersant to the binder to the plasticizer to the solvent is 1:0.02, (0.1-0.2), (0.03-0.05), (1-1.2); the solvent is ethanol and butanone, and the mass ratio of the ethanol to the butanone is 1 (0.5-1); the binder is polyvinyl butyral or ethyl cellulose; the plasticizer is dioctyl phthalate; the dispersing agent is octyl phenol polyethenoxy ether;

and S4, carrying out tape casting on the tape casting slurry to obtain a thick film green body, heating the thick film green body to 400 ℃ for binder removal, then heating to 1100 ℃ and keeping the temperature II, heating to 1200 ℃ and keeping the temperature III for sintering, and then cooling along with the furnace to obtain the lead zirconate titanate thick film ceramic.

2. The lead zirconate titanate thick film ceramic of claim 1, wherein the ball milling speed in step S1 is 250-350 r/min, the ball milling time is 20-24 h, the drying temperature is 60-80 ℃, and the drying time is 8-16 h; the aperture of the screen is 80-100 meshes, the calcining temperature is 800-1000 ℃, and the calcining time is 1-3 hours.

3. The lead zirconate titanate thick film ceramic of claim 1, wherein the rotation speed of the ball milling in the step S2 is 250-350 r/min, and the time of the ball milling is 2-3 h; the drying temperature is 60-80 ℃, and the drying time is 6-10 h; the aperture of the screen is 80-100 meshes.

4. The lead zirconate titanate thick film ceramic of claim 1, wherein the rotational speeds of the tumbling mill I, the tumbling mill II and the tumbling mill III in the step S3 are all 180-250 r/min, and the time of the tumbling mill I is 2-20 h; the tumbling mill II is carried out for 8-12 hours; the time of the tumbling mill III is 12-16 h.

5. The lead zirconate titanate thick film ceramic of claim 1, wherein the rotational speed of the casting in the step S4 is 0.21-0.23 r/min, and the temperature of the casting is 41-43 ℃; the viscosity of the casting slurry is 600-700 mpa · s; the heating rate of the heating I is 1-3 ℃/min, the glue discharging time is 4-6 h, the heating rate of the heating II and the heating rate of the heating III are both 8-12 ℃/min, the heat preservation time of the heating II is 4-6 h, and the heat preservation time of the heating III is 0.5-2 h.

6. Use of the lead zirconate titanate thick film ceramic of any one of claims 1 to 5 in the field of multilayer ceramic capacitors.