CN109599478A - A kind of method of interface cladding optimization telluro composite material thermoelectricity capability - Google Patents
A kind of method of interface cladding optimization telluro composite material thermoelectricity capability Download PDFInfo
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- CN109599478A CN109599478A CN201811441366.7A CN201811441366A CN109599478A CN 109599478 A CN109599478 A CN 109599478A CN 201811441366 A CN201811441366 A CN 201811441366A CN 109599478 A CN109599478 A CN 109599478A
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- 239000002131 composite material Substances 0.000 title claims abstract description 25
- 230000005619 thermoelectricity Effects 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005253 cladding Methods 0.000 title claims abstract description 16
- 238000005457 optimization Methods 0.000 title claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 36
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 33
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000010791 quenching Methods 0.000 claims abstract description 8
- 230000000171 quenching effect Effects 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000011282 treatment Methods 0.000 claims abstract description 4
- 238000000227 grinding Methods 0.000 claims abstract description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 3
- 238000005036 potential barrier Methods 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 15
- 239000001509 sodium citrate Substances 0.000 claims description 15
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 15
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 10
- 229940053662 nickel sulfate Drugs 0.000 claims description 10
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 10
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 10
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 10
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 10
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 10
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 claims description 5
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 239000002023 wood Substances 0.000 claims description 2
- 238000007670 refining Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- NFIYTPYOYDDLGO-UHFFFAOYSA-N phosphoric acid;sodium Chemical compound [Na].OP(O)(O)=O NFIYTPYOYDDLGO-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Powder Metallurgy (AREA)
Abstract
A kind of method of interface cladding optimization telluro composite material thermoelectricity capability, belong to the field of thermoelectric material preparation, it is characterized in that using tellurium block, metallic compound and reducing agent as raw material, Ni-Te heterojunction structure energy barrier is formed in tellurium grain boundaries using the method for interface cladding, it filters low energy carrier and improves power factor, scattering phonon reduces thermal conductivity, and then improves the thermoelectricity capability of telluro composite material.This method is that tellurium block is first carried out melting in vitreosil pipe, then in turn through obtaining tellurium simple substance powder after quenching treatment, annealing and grinding；Tellurium simple substance powder is reacted in ultrasonic generator with the reducing solution of configuration again, obtained telluro composite material after obtained reaction product drying and sintering.Its advantage and purposes are: the concentration by changing reducing solution, the height of adjustable Ni-Te interfacial energy potential barrier, and then regulate and control the thermoelectricity capability of telluro composite material.
Description
Technical field
A kind of method of interface cladding optimization telluro composite material thermoelectricity capability of the present invention, belongs to the neck of thermoelectric material preparation
Optimization telluro composite wood is realized using interface cladding process specifically using tellurium block, metallic compound, reducing agent as raw material in domain
Expect the technical solution of thermoelectricity capability.
Background technique
Tellurium is a kind of simple substance thermoelectric material, by interaction between solid interior carrier and structure realize thermal energy and
The mutual conversion of electric energy, using thermo-electric device made of the material have it is simple it is light and handy, noiseless, durable, be quick on the draw,
The advantages that environmental protection is reliable.The conversion efficiency of thermoelectric of simple substance tellurium is lower at present, prepares telluro composite material by interface cladding process,
The energy filtering effect that interface generates can effectively stop low energy carrier and scattering phonon, reach and promote telluro composite material
The purpose of thermoelectricity capability.
Summary of the invention
A kind of purpose of the method for interface cladding optimization telluro composite material thermoelectricity capability of the present invention is to wrap using interface
The filtering effect and scattering effect of coating, it is synchronous to reduce thermal conductivity and improve power factor, to optimize telluro composite material
Thermoelectricity capability.
A kind of method of interface cladding optimization telluro composite material thermoelectricity capability of the present invention, it is characterised in that with tellurium block, gold
Belong to compound and reducing agent be raw material, Ni-Te heterojunction structure energy barrier is formed in tellurium grain boundaries using the method for interface cladding,
It filters low energy carrier and improves power factor, scattering phonon reduces thermal conductivity, and then improves the thermoelectricity capability of telluro composite material.
This method is that tellurium block is first carried out melting in vitreosil pipe, after quenching treatment, annealing and grinding
Obtain tellurium simple substance powder；Tellurium simple substance powder is reacted in ultrasonic generator with the reducing solution of configuration again, obtained reaction
Telluro composite material is made after product drying and sintering, the specific steps are as follows:
1) purity >=99.999wt.% tellurium block is sealed in vacuum degree < 10-3In the vitreosil pipe of Pa, at 460-500 DEG C
Block 1 is obtained after melting 10-12h；Block 1 obtains block 2 after room temperature water quenching；Block 2 is obtained in 400-420 DEG C of annealing 72h
Block 3；Block 3 is ground into powder 1, granularity≤45 micron；Powder 1 is carried out in the hydrofluoric acid solution that concentration is 20wt.%
Then sensitized treatment 0.5-1h dries 2-3h at 75-80 DEG C with washes of absolute alcohol 3-5 times, obtain powder 2；
2) purity >=98.5wt.% is successively weighed according to mass ratio 6:9:1.6:4.8:8, the nickel sulfate hexahydrate crystal of partial size≤800 μm,
The sodium citrate of purity >=99wt.%, the sodium hypophosphite crystal of partial size≤500 μm, purity >=99wt.%, partial size≤500 μm is brilliant
Body, purity >=99wt.%, the sodium pyrophosphate crystal and purity >=85wt.% triethylamine alcohol of partial size≤45 μm, by above-mentioned four kinds of crystalline substances
Body, which is dissolved separately in 8-10mL deionized water, forms nickel sulfate solution 1, sodium hypophosphite solution 2, sodium citrate solution 3, burnt phosphorus
Acid sodium solution 4；Sodium citrate successively is added in nickel sulfate solution 1, sodium hypophosphite solution 2, sodium pyrophosphate solution 4, triethanolamine
In solution 3, deionized water is added and is settled to 50mL, obtains the solution 5 that concentration is 0.3-0.9g/ml；
3) it after mixing powder 2 and solution 5 according to 5g:50mL ratio, is placed in ultrasonic generator and reacts 10-20min；It will reaction
Product is washed with deionized 3-5 times, in 100-110 DEG C of drying 2-3h time, obtains powder 3；
4) powder 3 is fitted into graphite jig and is sintered, 410-420 DEG C of sintering temperature, pressure 40-45MPa, soaking time
10-15min is then shut off power supply, and furnace cooling obtains block sample 1, and tests its thermoelectricity capability.
A kind of method of interface cladding optimization telluro composite material thermoelectricity capability of the present invention, advantage and purposes are: logical
The concentration for changing solution 5, the height of adjustable Ni-Te interfacial energy potential barrier are crossed, and then regulates and controls the thermoelectricity of telluro composite material
Performance.
A kind of method of interface of present invention cladding optimization telluro composite material thermoelectricity capability can at tellurium granular boundary shape
At the Ni-Te energy barrier that hetero-junctions constructs, realizes by filtering low energy carrier and scattering phonon and increase the sample power factor
With the purpose for reducing thermal conductivity.
Detailed description of the invention
The interface Fig. 1 coats the power factor of telluro composite material,
The thermal conductivity of the interface Fig. 2 cladding telluro composite material.
Specific embodiment
Embodiment 1
5g purity >=99.999wt.% tellurium block is sealed in vacuum degree < 10-3In the vitreosil pipe of Pa, at 460-500 DEG C
Block 1 is obtained after melting 10-12h；Block 1 obtains block 2 after room temperature water quenching；Block 2 is obtained in 400-420 DEG C of annealing 72h
Block 3；Block 3 is ground into powder 1, granularity≤45 micron；Powder 1 is sensitized in the hydrofluoric acid that concentration is 20wt.%
It handles 0.5-1h and then dries 2-3h at 75-80 DEG C with washes of absolute alcohol 3-5 times, obtain powder 2；Successively weigh purity
>=98.5wt.%, the nickel sulfate hexahydrate crystal 3.0g of partial size≤800 μm, purity >=99wt.%, the sodium hypophosphite crystal of partial size≤500 μm
4.5g, purity >=99wt.%, the sodium citrate crystal 0.8g of partial size≤500 μm, purity >=99wt.%, the burnt phosphorus of partial size≤45 μm
Above-mentioned four kinds of crystal are dissolved separately in 8-10mL deionized water by sour sodium crystal 2.4g, purity >=85wt.% triethanolamine 4mL
Middle formation nickel sulfate solution 1, sodium hypophosphite solution 2, sodium citrate solution 3, sodium pyrophosphate solution 4；Successively by nickel sulfate solution
1, sodium hypophosphite solution 2, sodium pyrophosphate solution 4, triethanolamine are added in sodium citrate solution 3, and deionized water constant volume is added to arrive
50mL obtains solution 5；After powder 2 and solution 5 are mixed, it is placed in ultrasonic generator and reacts 10-20min；Reaction product is used
Deionized water is washed 3-5 times, in 100-110 DEG C of drying 2-3h time, obtains powder 3；Powder 3 is fitted into graphite jig and is carried out
Sintering, 410-420 DEG C of sintering temperature, pressure 40-45MPa, soaking time 10-15min, is then shut off power supply, furnace cooling obtains
Block sample 1 is obtained, relative to simple substance tellurium, performance is obviously improved within the scope of 20-230 DEG C, and power factor is reached at 175 DEG C
To 215 μ WK of maximum value-2m-1, it is 19 times of simple substance tellurium；Thermal conductivity is remarkably decreased, and is reduced to 0.93Wm at 175 DEG C-1/K-1, than
Simple substance tellurium reduces 28%.
Embodiment 2
5g purity >=99.999wt.% tellurium block is sealed in vacuum degree < 10-3In the vitreosil pipe of Pa, at 460-500 DEG C
Block 1 is obtained after melting 10-12h；Block 1 obtains block 2 after room temperature water quenching；Block 2 is obtained in 400-420 DEG C of annealing 72h
Block 3；Block 3 is ground into powder 1, granularity≤45 micron；Powder 1 is sensitized in the hydrofluoric acid that concentration is 20wt.%
It handles 0.5-1h and then dries 2-3h at 75-80 DEG C with washes of absolute alcohol 3-5 times, obtain powder 2；Successively weigh purity
The sodium hypophosphite of >=98.5wt.%, the nickel sulfate hexahydrate crystal 3.75g of partial size≤800 μm, purity >=99wt.%, partial size≤500 μm are brilliant
Body 5.625g, purity >=99wt.%, the sodium citrate crystal 1g of partial size≤500 μm, purity >=99wt.%, the coke of partial size≤45 μm
Above-mentioned four kinds of crystal are dissolved separately in 8-10mL deionized water by phosphoric acid sodium crystal 3g, purity >=85wt.% triethanolamine 5mL
Middle formation nickel sulfate solution 1, sodium hypophosphite solution 2, sodium citrate solution 3, sodium pyrophosphate solution 4；Successively by nickel sulfate solution
1, sodium hypophosphite solution 2, sodium pyrophosphate solution 4, triethanolamine are added in sodium citrate solution 3, and deionized water constant volume is added to arrive
50mL obtains solution 5；After powder 2 and solution 5 are mixed, it is placed in ultrasonic generator and reacts 10-20min；Reaction product is used
Deionized water is washed 3-5 times, in 100-110 DEG C of drying 2-3h time, obtains powder 3；Powder 3 is fitted into graphite jig and is carried out
Sintering, 410-420 DEG C of sintering temperature, pressure 40-45MPa, soaking time 10-15min, is then shut off power supply, furnace cooling obtains
Block sample 1 is obtained, relative to simple substance tellurium, performance is obviously improved within the scope of 20-230 DEG C, and power factor is reached at 200 DEG C
To 211 μ WK of maximum value-2m-1, it is 9 times of simple substance tellurium；Thermal conductivity is remarkably decreased, and is reduced to 0.89Wm at 200 DEG C-1/K-1, than
Simple substance tellurium reduces 27%.
Embodiment 3
5g purity >=99.999wt.% tellurium block is sealed in vacuum degree < 10-3In the vitreosil pipe of Pa, at 460-500 DEG C
Block 1 is obtained after melting 10-12h；Block 1 obtains block 2 after room temperature water quenching；Block 2 is obtained in 400-420 DEG C of annealing 72h
Block 3；Block 3 is ground into powder 1, granularity≤45 micron；Powder 1 is sensitized in the hydrofluoric acid that concentration is 20wt.%
It handles 0.5-1h and then dries 2-3h at 75-80 DEG C with washes of absolute alcohol 3-5 times, obtain powder 2；Successively weigh purity
>=98.5wt.%, the nickel sulfate hexahydrate crystal 4.5g of partial size≤800 μm, purity >=99wt.%, the sodium hypophosphite crystal of partial size≤500 μm
6.7g, purity >=99wt.%, the sodium citrate crystal 1.2g of partial size≤500 μm, purity >=99wt.%, the burnt phosphorus of partial size≤45 μm
Above-mentioned four kinds of crystal are dissolved separately in 8-10mL deionized water by sour sodium crystal 3.6g, purity >=85wt.% triethanolamine 6mL
Middle formation nickel sulfate solution 1, sodium hypophosphite solution 2, sodium citrate solution 3, sodium pyrophosphate solution 4；Successively by nickel sulfate solution
1, sodium hypophosphite solution 2, sodium pyrophosphate solution 4, triethanolamine are added in sodium citrate solution 3, and deionized water constant volume is added to arrive
50mL obtains solution 5；After powder 2 and solution 5 are mixed, it is placed in ultrasonic generator and reacts 10-20min；Reaction product is used
Deionized water is washed 3-5 times, in 100-110 DEG C of drying 2-3h time, obtains powder 3；Powder 3 is fitted into graphite jig and is carried out
Sintering, 410-420 DEG C of sintering temperature, pressure 40-45MPa, soaking time 10-15min, is then shut off power supply, furnace cooling obtains
Block sample 1 is obtained, relative to simple substance tellurium, performance is obviously improved within the scope of 20-230 DEG C, and power factor is reached at 175 DEG C
To 221 μ WK of maximum value-2m-1, it is 20 times of simple substance tellurium；Thermal conductivity is remarkably decreased, and is reduced to 0.87Wm at 175 DEG C-1/K-1,
33% is reduced than simple substance tellurium.
Claims (2)
1. a kind of method of interface cladding optimization telluro composite material thermoelectricity capability, it is characterised in that with tellurium block, metallic compound
It is raw material with reducing agent, Ni-Te heterojunction structure energy barrier is formed in tellurium grain boundaries using the method for interface cladding, filters low energy
Carrier improves power factor, and scattering phonon reduces thermal conductivity, and then improves the thermoelectricity capability of telluro composite material；This method is
Tellurium block is first subjected to melting in vitreosil pipe, then in turn through obtaining tellurium list after quenching treatment, annealing and grinding
Matter powder；Tellurium simple substance powder is reacted in ultrasonic generator with the reducing solution of configuration again, obtained reaction product is through drying
Telluro composite material is made after dry and sintering, specific reaction step is as follows:
1) purity >=99.999wt.% tellurium block is sealed in vacuum degree < 10-3It is molten at 450-500 DEG C in the vitreosil pipe of Pa
Block 1 is obtained after refining 10-12h；Block 1 obtains block 2 after room temperature water quenching；Block 2 obtains block in 400-450 DEG C of annealing 72h
Body 3；Block 3 is ground into powder 1, granularity≤45 micron；By powder 1 concentration be 20wt.% hydrofluoric acid solution in be sensitized
It handles 0.5-1h and then dries 2-3h at 75-80 DEG C with washes of absolute alcohol 3-5 times, obtain powder 2；
2) purity >=98.5wt.% is successively weighed according to mass ratio 6:9:1.6:4.8:8, the nickel sulfate hexahydrate crystal of partial size≤800 μm,
The sodium citrate of purity >=99wt.%, the sodium hypophosphite crystal of partial size≤500 μm, purity >=99wt.%, partial size≤500 μm is brilliant
Body, purity >=99wt.%, the sodium pyrophosphate crystal and purity >=85wt.% triethylamine alcohol of partial size≤45 μm, by above-mentioned four kinds of crystalline substances
Body, which is dissolved separately in 8-10mL deionized water, forms nickel sulfate solution 1, sodium hypophosphite solution 2, sodium citrate solution 3, burnt phosphorus
Acid sodium solution 4；Sodium citrate successively is added in nickel sulfate solution 1, sodium hypophosphite solution 2, sodium pyrophosphate solution 4, triethanolamine
In solution 3, deionized water is added and is settled to 50mL, obtains the mixed liquor 5 that concentration is 0.3-0.9g/ml；
3) it after mixing powder 2 and mixed liquor 5 according to 5g:50mL ratio, is placed in ultrasonic generator and reacts 10-20min；It will be anti-
It answers product to be washed with deionized 3-5 times, in 100-110 DEG C of drying 2-3h time, obtains powder 3；
4) powder 3 is fitted into graphite jig and is sintered, 410-450 DEG C of sintering temperature, pressure 40-45MPa, soaking time
10-15min is then shut off power supply, and furnace cooling obtains block sample 1, and tests its thermoelectricity capability.
2. a kind of method of cladding optimization telluro composite material thermoelectricity capability in interface described in accordance with the claim 1, advantage and
Purposes is: the concentration by changing mixed liquor 5 adjusts the height of Ni-Te interfacial energy potential barrier, and then regulates and controls telluro composite wood
The thermoelectricity capability of material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190177A (en) * | 2019-05-14 | 2019-08-30 | 清华大学 | A kind of selenizing bismuthino organic intercalation thermoelectric material and preparation method thereof |
| CN110698203A (en) * | 2019-09-27 | 2020-01-17 | 太原理工大学 | Preparation method of elemental tellurium-based composite thermoelectric material |
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| JPH10321919A (en) * | 1997-03-18 | 1998-12-04 | Yamaha Corp | Thermoelectric material having ni-alloy coating film |
| JP2002043639A (en) * | 2000-07-22 | 2002-02-08 | Shinko Kogyo Kk | Chemical nickel plating method for thermoelectric semiconductor |
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2018
- 2018-11-29 CN CN201811441366.7A patent/CN109599478B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB902495A (en) * | 1959-08-05 | 1962-08-01 | Siemens Ag | Improvements in or relating to processes for the production of solderable coatings on bodies of semi-conducting material |
| FR2202958A1 (en) * | 1972-10-12 | 1974-05-10 | Ni | Depositing nickel on semiconductors - by thermal decompsn. of nickel carbonyl |
| JPH10321919A (en) * | 1997-03-18 | 1998-12-04 | Yamaha Corp | Thermoelectric material having ni-alloy coating film |
| JP2002043639A (en) * | 2000-07-22 | 2002-02-08 | Shinko Kogyo Kk | Chemical nickel plating method for thermoelectric semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190177A (en) * | 2019-05-14 | 2019-08-30 | 清华大学 | A kind of selenizing bismuthino organic intercalation thermoelectric material and preparation method thereof |
| CN110698203A (en) * | 2019-09-27 | 2020-01-17 | 太原理工大学 | Preparation method of elemental tellurium-based composite thermoelectric material |
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