CN104103750A - Preparation method of magnesium-silicon based silicon nanowire composite thermoelectric material - Google Patents
Preparation method of magnesium-silicon based silicon nanowire composite thermoelectric material Download PDFInfo
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- CN104103750A CN104103750A CN201410352839.1A CN201410352839A CN104103750A CN 104103750 A CN104103750 A CN 104103750A CN 201410352839 A CN201410352839 A CN 201410352839A CN 104103750 A CN104103750 A CN 104103750A
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Abstract
The invention discloses a preparation method of a magnesium-silicon based silicon nanowire composite thermoelectric material, belongs to the field of preparation of semiconductor thermoelectric materials, and specifically discloses a technical scheme including the steps of preparing a silicon nanowire by utilizing a chemical etching way, stripping the silicon nanowire through ultrasonic oscillation and mixing the silicon nanowire with magnesium-silicon based powder synchronously and uniformly, and preparing the magnesium-silicon based silicon nanowire composite thermoelectric material through electric field assisted sintering. The preparation method of the magnesium-silicon based silicon nanowire composite thermoelectric material is characterized in that the problems of twining, agglomerating and the like of the silicon nanowire in the preparation of the composite blocky material are avoided through synchronous realization of stripping and mixing of the silicon nanowire, and the composite material which achieves uniformly distributed silicon nanowire and is well combined with the base body can be prepared in the later electric field assisted sintering process. The characteristics of the preparation method are that the source of the raw material is abundant, the cost is low, the technology is simple, the easy agglomeration problem of the nanowire is solved, the nanowire of the prepared silicon nanometer composite Mg2Si material is uniform in distribution, and the heat conductivity is low. According to the invention, a method for compositely reducing the heat conductivity of the Mg2Si based thermoelectric material and improving the thermoelectric performance by using the nanowire is provided.
Description
Technical field
The preparation method of magnesium silicon on silicon nano wire composite thermoelectric material, belong to semi-conductor thermoelectric material preparation field, specifically utilize chemical etching method to prepare silicon nanowires, realize that silicon nanowires is peeled off and synchronize evenly mixing with the silica-based powder of magnesium through sonic oscillation, prepare the technical scheme of magnesium silicon on silicon nano wire composite thermoelectric material through electric field assisted sintering.
Background technology
Thermoelectric material is to utilize thermoelectric effect (thermoelectric effect) to realize a class functional material of mutually changing between electric energy and heat energy.Thermoelectricity conversion using be the charge carrier of solid interior, the application device that therefore utilizes thermoelectric material to make have be easy to control, reliability is high; Movement-less part, the advantages such as noiseless, at solar power generation, the application in the fields such as used heat recycling and military aviation has obvious advantage.The performance of thermoelectric material characterizes ZT=S with dimensionless thermoelectric figure of merit ZT
2σ T/ κ, wherein S is that Seebeck coefficient, σ are that conductivity, κ are thermal conductivity.ZT value is higher, and conversion efficiency of thermoelectric is higher.A kind of good thermoelectric material should have high conductivity and low thermal conductivity.
Low-dimensional nano structure utilizes quantum limitation effect to improve near density of electronic states Fermi level by the coordinated regulation of electricity, sound transport property being optimized to thermoelectricity capability, thereby in not reducing conductivity, improves Seebeck coefficient; In not increasing electron scattering, significantly strengthen the scattering process to phonon based on boundary scattering effect, thereby reduce lattice thermal conductivity simultaneously.Novel nano structure thermoelectric material has the material such as one-dimensional nano line and two-dimensional nano film, and wherein silicon nanowires has excellent thermoelectricity capability.Bibliographical information diameter be 50-100nm silicon nanowires at room temperature ZT value be about 1, continue to reduce its diameter, ZT value further increases.
Mg
2si base thermoelectricity material belongs to middle temperature (500K-800K) thermoelectric material, has cheapness, the feature that nontoxic, corrosion-resistant, high temperatures is good, is a kind of new green power material.With Mg
2si is the solid solution of base, and effective mass is large, mobility is large, and lattice thermal conductivity is little, is with a wide range of applications.But simple Mg
2the lattice thermal conductivity of Si is higher, has limited the raising of its thermoelectricity capability.
Summary of the invention
The preparation method's of magnesium silicon on silicon nano wire composite thermoelectric material of the present invention object is: for solving the problem of above-mentioned prior art, open one is utilized silicon nanowires and Mg
2the compound effective reduction matrix thermal conductivity of Si thermoelectric material, improves and optimizes Mg by doping Sb, Bi, La or Ag
2si sill thermoelectricity capability, synchronously realize that silicon nanowires is peeled off and mixing avoids silicon nanowires in composite block material preparation, be wound around and reunite, in later stage electric field assisted sintering process, prepare silicon nanowire distribution evenly and be combined the method for good magnesium silicon on silicon nano wire composite thermoelectric material with matrix, the method technique is simple, rate of finished products is high, the thermoelectricity capability that can effectively improve the silica-based thermoelectric material of magnesium, has important scientific meaning and using value for the exploitation of high performance thermoelectric material.
The preparation method of magnesium silicon on silicon nano wire composite thermoelectric material of the present invention, it is characterized in that one utilizes silicon nanowires and Mg
2the compound effective reduction matrix thermal conductivity of Si thermoelectric material, improves and optimizes Mg by doping Sb, Bi, La or Ag
2si sill thermoelectricity capability, synchronously realize that silicon nanowires is peeled off and mixing avoids silicon nanowires in composite block material preparation, be wound around and reunite, in later stage electric field assisted sintering process, prepare silicon nanowire distribution evenly and be combined the method for good magnesium silicon on silicon nano wire composite thermoelectric material with matrix, the method is to utilize AgNO
3the mixed liquor of solution and HF acid is etching liquid, and on monocrystalline silicon piece, normal temperature etching 3h-4h prepares silicon nanowires, and the silicon chip after etching goes silver to process and cleans rear and purity >99%, granularity≤850 μ mMg
2si powder and X are the ultrasonic mixing of ethanol solution that the element of Sb, Bi, La and Ag is placed in water content < 0.03wt.% simultaneously, mixed solution is drying and processing under the environment of vacuum degree > 0.09MPa, powder after drying is carried out to ball milling, for fear of the pollution in mechanical milling process, adopt ball grinder and the ZrO of polytetrafluoroethylene
2abrading-ball, the powder after ball milling is placed in graphite jig and adopts FAPAS method to sinter block nanometer compound thermal material into, and as shown in Figure 1, concrete steps are as follows for whole process:
1) measure respectively AgNO with graduated cylinder and dropper
3solution and HF acid mix the two and are made into etching liquid 1 in beaker, and twin polishing monocrystalline silicon piece 2 is placed in to etching liquid, etching 3-4h under normal temperature;
2) after the silicon chip after etching goes silver to process in red fuming nitric acid (RFNA), clean 5-10min with distilled water, the beaker that the silicon chip cleaning up 3 is placed in to ethanol solution 4 is for subsequent use, the water content < 0.03wt.% of ethanol solution 4;
3) in vacuum glove box, take the Mg that mole mixture ratio example is 0.96≤x≤0.99
2si powder and Bi powder, form mixed powder 5 and be placed in solution 4;
4) beaker sonic oscillation 20-25min in supersonic wave cleaning machine 6 of solution 4 will be filled, then take out silicon chip, surplus solution 7 is placed in vacuum environment and on temperature control magnetic stirring apparatus 8, carries out magnetic agitation and vacuum drying simultaneously, vacuum degree > 0.09MPa, bake out temperature is 35 DEG C, and the time is 120min.
5) powder after drying is placed in to polytetrafluoroethylene ball grinder ball milling 4h on planetary ball mill, ratio of grinding media to material is 8:1, forms powder 9;
6) powder 9 is placed in to graphite jig 10, in the vacuum FAPAS stove of vacuum degree > 10Pa, rises to 750 DEG C through 15min temperature, insulation 20min, in insulating process, pressure is 60MPa, after insulation finishes, and close current heating, release, sample is cooling with stove.
The beneficial effect that the preparation method of magnesium silicon on silicon nano wire composite thermoelectric material of the present invention has is: the silicon nanowires of peeling off that the silicon chip after etching obtains through sonic oscillation, diameter has reached nanoscale (as shown in Figure 2).Synchronously realize peeling off of silicon line and mixing of powder, efficiently solved the easy agglomeration traits of silicon nanowires, made silicon nanowires can be uniformly distributed (as shown in Figure 3) in matrix.Magnesium silicon on silicon nano wire composite thermoelectric material prepared by the present invention, silicon nanowires can be stored in basis material crystal grain, runs through two to three crystal grain (as shown in Figure 4), has successfully realized the preparation of magnesium silicon on silicon nano wire composite thermoelectric material.The thermal conductivity of magnesium silica-based nanowire composite thermoelectric material is starkly lower than the thermal conductivity (as shown in Figure 5) of magnesium silica-base material.
Brief description of the drawings
Fig. 1 prepares the procedure chart of magnesium silicon on silicon nano wire composite thermoelectric material, in figure
1-etching liquid 2-monocrystalline silicon piece 3-removes the silicon chip 4-ethanol solution 5-Mg after silver cleans
2powder 10-graphite jig after the mixed liquor 8-temperature control magnetic stirring apparatus 9-ball milling of Si powder and Bi powder 6-ultrasonic washing instrument 7-silicon nanowires, powder and absolute ethyl alcohol.
The free silicon nanowires SEM pattern that Fig. 2 utilizes chemical etching method to peel off from silicon chip surface, white box part is single silicon nanowire local magnification region.
Fig. 3 utilizes the silicon nanowires powder shown in Fig. 2 and Bi powder and Mg
2the section SEM figure of magnesium silicon on silicon nano wire composite thermoelectric material prepared by Si powder, brilliant white part is silicon nanowires.
The transmission photo of Fig. 4 magnesium silicon on silicon nano wire composite thermoelectric material, the diffraction spot in figure is corresponding with the silicon nanowires in the region of white box shown in arrow.
The thermal conductivity of magnesium silicon on silicon nano wire composite thermoelectric material prepared by Fig. 5 different technical parameters varies with temperature curve chart.
Embodiment
execution mode 1
Measure respectively the AgNO that 20mL concentration is 0.035mol/L with graduated cylinder and dropper
3the HF acid of solution and 20mL 20 wt.% mixes the two and is made into etching liquid 1 in beaker.The twin polishing p-type monocrystalline silicon piece 2 of 10mm × 10mm is placed in to etching liquid, etching 3h under normal temperature; Silicon chip after etching cleans 5min with distilled water after 40mL concentration is to go silver to process in 60wt.% red fuming nitric acid (RFNA), and the silicon chip cleaning up 3 is placed in and fills 20mL ethanol solution 4(water content < 0.03wt.%) beaker for subsequent use; In vacuum glove box, take 2g mixed powder, wherein Mg
2si powder (purity >99%, granularity≤850 μ m) and Bi powder (purity 99.99%, μ mole mixture ratio example m) in granularity≤75 is 0.99, mixed powder 5 is placed in solution 4; By the beaker that fills solution 4 at supersonic wave cleaning machine 6(model: PS-20) in sonic oscillation 20min, then take out silicon chip, surplus solution 7 is placed in vacuum environment at temperature control magnetic stirring apparatus 8(model: 85-2) on carry out magnetic agitation and vacuum drying simultaneously, vacuum degree > 0.09MPa, bake out temperature is 35 DEG C, and the time is 120min; Powder after drying is placed in to polytetrafluoroethylene ball grinder ball milling 4h on planetary ball mill, and ratio of grinding media to material is 8:1, forms powder 9; Powder 9 is placed in to the graphite jig 10 that diameter is 20mm, in vacuum FAPAS stove, (vacuum degree > 10Pa) rises to 750 DEG C through 15min temperature, insulation 20min, in insulating process, pressure is 60MPa, after insulation finishes, close current heating, release, sample is cooling with stove, obtains buik silicon nano wire composite material.
execution mode 2
Measure respectively the AgNO that 20mL concentration is 0.035mol/L with graduated cylinder and dropper
3the HF acid of solution and 20mL 20 wt.% mixes the two and is made into etching liquid 1 in beaker.The twin polishing p-type monocrystalline silicon piece 2 of 15mm × 20mm is placed in to etching liquid, etching 4h under normal temperature; Silicon chip after etching cleans 10min with distilled water after 40mL concentration is to go silver to process in 60wt.% red fuming nitric acid (RFNA), and the silicon chip cleaning up 3 is placed in and fills 20mL ethanol solution 4(water content < 0.03wt.%) beaker for subsequent use; In vacuum glove box, take 2g mixed powder, wherein Mg
2si powder (purity >99%, granularity≤850 μ m) and Bi powder (purity 99.99%, μ mole mixture ratio example m) in granularity≤75 is 0.99, mixed powder 5 is placed in solution 4; By the beaker that fills solution 4 at supersonic wave cleaning machine 6(model: PS-20) in sonic oscillation 25min, then take out silicon chip, surplus solution 7 is placed in vacuum environment at temperature control magnetic stirring apparatus 8(model: 85-2) on carry out magnetic agitation and vacuum drying simultaneously, vacuum degree > 0.09MPa, bake out temperature is 35 DEG C, and the time is 120min; Powder after drying is placed in to polytetrafluoroethylene ball grinder ball milling 4h on planetary ball mill, and ratio of grinding media to material is 8:1, forms powder 9; Powder 9 is placed in to the graphite jig 10 that diameter is 20mm, in vacuum FAPAS stove, (vacuum degree > 10Pa) rises to 750 DEG C through 15min temperature, insulation 20min, in insulating process, pressure is 60MPa, after insulation finishes, close current heating, release, sample is cooling with stove, obtains buik silicon nano wire composite material.
execution mode 3
Measure respectively the AgNO that 20mL concentration is 0.035mol/L with graduated cylinder and dropper
3the HF acid of solution and 20mL 20 wt.% mixes the two and is made into etching liquid 1 in beaker.The twin polishing N-shaped monocrystalline silicon piece 2 of 10mm × 10mm is placed in to etching liquid, etching 3h under normal temperature; Silicon chip after etching cleans 5min with distilled water after 40mL concentration is to go silver to process in 60wt.% red fuming nitric acid (RFNA), and the silicon chip cleaning up 3 is placed in and fills 20mL ethanol solution 4(water content < 0.03wt.%) beaker for subsequent use; In vacuum glove box, take 2g mixed powder, wherein Mg
2si powder (purity >99%, granularity≤850 μ m) and Bi powder (purity 99.99%, μ mole mixture ratio example m) in granularity≤75 is 0.99, mixed powder 5 is placed in solution 4; By the beaker that fills solution 4 at supersonic wave cleaning machine 6(model: PS-20) in sonic oscillation 20min, then take out silicon chip, surplus solution 7 is placed in vacuum environment at temperature control magnetic stirring apparatus 8(model: 85-2) on carry out magnetic agitation and vacuum drying simultaneously, vacuum degree > 0.09MPa, bake out temperature is 35 DEG C, and the time is 120min; Powder after drying is placed in to polytetrafluoroethylene ball grinder ball milling 4h on planetary ball mill, and ratio of grinding media to material is 8:1, forms powder 9; Powder 9 is placed in to the graphite jig 10 that diameter is 20mm, in vacuum FAPAS stove, (vacuum degree > 10Pa) rises to 750 DEG C through 15min temperature, insulation 20min, in insulating process, pressure is 60MPa, after insulation finishes, close current heating, release, sample is cooling with stove, obtains buik silicon nano wire composite material.
contrast scheme
In magnesium silica-base material, do not add silicon nanowires, other operating process is identical with execution mode 1.
In vacuum glove box, take 2g mixed powder, wherein Mg
2si powder (purity >99%, granularity≤850 μ m) and Bi powder (purity 99.99%, granularity≤75 μ mole mixture ratio example 0.99 m), form mixed powder 5, mixed powder 5 is placed in to polytetrafluoroethylene ball grinder ball milling 4h on planetary ball mill, ratio of grinding media to material is 8:1, forms powder 9; Powder 9 is placed in to the graphite jig 10 that diameter is 20mm, in vacuum FAPAS stove, (vacuum degree > 10Pa) rises to 750 DEG C through 15min temperature, insulation 20min, in insulating process, pressure is 60MPa, after insulation finishes, close current heating, release, sample is cooling with stove, obtains block composite material.
Claims (1)
1. the preparation method of magnesium silicon on silicon nano wire composite thermoelectric material, it is characterized in that one utilizes silicon nanowires and Mg
2the compound effective reduction matrix thermal conductivity of Si thermoelectric material, improves and optimizes Mg by doping Sb, Bi, La or Ag
2si sill thermoelectricity capability, synchronously realize that silicon nanowires is peeled off and mixing avoids silicon nanowires in composite block material preparation, be wound around and reunite, in later stage electric field assisted sintering process, prepare silicon nanowire distribution evenly and be combined the method for good magnesium silicon on silicon nano wire composite thermoelectric material with matrix, the method is to utilize AgNO
3the mixed liquor of solution and HF acid is etching liquid, and on monocrystalline silicon piece, normal temperature etching 3h-4h prepares silicon nanowires, and the silicon chip after etching goes silver to process and cleans rear and purity >99%, granularity≤850 μ mMg
2si powder and X are the ultrasonic mixing of ethanol solution that the element of Sb, Bi, La and Ag is placed in water content < 0.03wt.% simultaneously, mixed solution is drying and processing under the environment of vacuum degree > 0.09MPa, powder after drying is carried out to ball milling, for fear of the pollution in mechanical milling process, adopt ball grinder and the ZrO of polytetrafluoroethylene
2abrading-ball, the powder after ball milling is placed in graphite jig and adopts FAPAS method to sinter block nanometer compound thermal material into, and concrete steps are as follows:
1) measure respectively AgNO with graduated cylinder and dropper
3solution and HF acid mix the two and are made into etching liquid (1) in beaker, twin polishing monocrystalline silicon piece (2) are placed in to etching liquid, etching 3-4h under normal temperature;
2) after the silicon chip after etching goes silver to process in red fuming nitric acid (RFNA), clean 5-10min with distilled water, the beaker that the silicon chip cleaning up (3) is placed in to ethanol solution (4) is for subsequent use, the water content < 0.03wt.% of ethanol solution (4);
3) in vacuum glove box, take the Mg that mole mixture ratio example is 0.96≤x≤0.99
2si powder and Bi powder, form mixed powder (5) and be placed in solution (4);
4) will fill beaker sonic oscillation 20-25min in supersonic wave cleaning machine (6) of solution (4), then take out silicon chip, surplus solution (7) is placed in vacuum environment and on temperature control magnetic stirring apparatus (8), carries out magnetic agitation and vacuum drying simultaneously, vacuum degree > 0.09MPa, bake out temperature is 35 DEG C, and the time is 120min;
5) powder after drying is placed in to polytetrafluoroethylene ball grinder ball milling 4h on planetary ball mill, ratio of grinding media to material is 8:1, forms powder (9);
6) powder (9) is placed in to graphite jig (10), in the vacuum FAPAS stove of vacuum degree > 10Pa, rises to 750 DEG C through 15min temperature, insulation 20min, in insulating process, pressure is 60MPa, after insulation finishes, and close current heating, release, sample is cooling with stove.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104891497A (en) * | 2015-05-06 | 2015-09-09 | 苏州旦能光伏科技有限公司 | Macroscopic quantity preparation method for solar-grade ultra-pure nano silicon powder |
| CN106694891A (en) * | 2016-11-15 | 2017-05-24 | 上海电机学院 | Ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips |
| CN110622328A (en) * | 2017-05-19 | 2019-12-27 | 日东电工株式会社 | Semiconductor sintered body, electric and electronic component, and method for producing semiconductor sintered body |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080087314A1 (en) * | 2006-10-13 | 2008-04-17 | Tulane University | Homogeneous thermoelectric nanocomposite using core-shell nanoparticles |
| CN101546805A (en) * | 2009-03-04 | 2009-09-30 | 中国科学院广州能源研究所 | Preparation method of high-quality-factor low-dimensional-oxide nanometer thermoelectric new material |
| KR20140045799A (en) * | 2012-10-09 | 2014-04-17 | 한양대학교 에리카산학협력단 | Manufacturing method for thermoelectric material and thermelectric material manufactured thereby |
-
2014
- 2014-07-23 CN CN201410352839.1A patent/CN104103750B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080087314A1 (en) * | 2006-10-13 | 2008-04-17 | Tulane University | Homogeneous thermoelectric nanocomposite using core-shell nanoparticles |
| CN101546805A (en) * | 2009-03-04 | 2009-09-30 | 中国科学院广州能源研究所 | Preparation method of high-quality-factor low-dimensional-oxide nanometer thermoelectric new material |
| KR20140045799A (en) * | 2012-10-09 | 2014-04-17 | 한양대학교 에리카산학협력단 | Manufacturing method for thermoelectric material and thermelectric material manufactured thereby |
Non-Patent Citations (1)
| Title |
|---|
| YONGMIN KANG: "A simple phase transformation strategy for converting silicon nanowires into metal silicide nanowires:Magnesium silicide", 《MATERIALS LETTERS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104891497A (en) * | 2015-05-06 | 2015-09-09 | 苏州旦能光伏科技有限公司 | Macroscopic quantity preparation method for solar-grade ultra-pure nano silicon powder |
| CN104891497B (en) * | 2015-05-06 | 2017-12-19 | 苏州旦能光伏科技有限公司 | A kind of magnanimity preparation method of the ultra-pure nano silica fume of solar-grade |
| CN106694891A (en) * | 2016-11-15 | 2017-05-24 | 上海电机学院 | Ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips |
| CN110622328A (en) * | 2017-05-19 | 2019-12-27 | 日东电工株式会社 | Semiconductor sintered body, electric and electronic component, and method for producing semiconductor sintered body |
| CN110622328B (en) * | 2017-05-19 | 2023-12-08 | 日东电工株式会社 | Semiconductor sintered body, electric and electronic component, and method for producing semiconductor sintered body |
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