CN109599406B - 具有太阳能电池的集成电路及其生产方法 - Google Patents
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Abstract
本发明涉及具有太阳能电池的集成电路及其生产方法,所提供的是集成电路及其生产方法。在一例示性具体实施例中,集成电路包括衬底,其具有握把层、上覆于该握把层的埋置型绝缘体层、及上覆于该埋置型绝缘体层的主动层。该握把层与该主动层包括单晶硅。晶体管上覆于该埋置型绝缘体层,并且太阳能电池位在该握把层内,使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间。该太阳能电池包括与太阳能电池外层接触部电连通的太阳能电池外层、及与太阳能电池内层接触部电连通的太阳能电池内层。该等太阳能电池内层与外层为单晶硅。
Description
技术领域
本发明的技术领域大体上是关于具有太阳能电池的集成电路及其生产方法,并且更尤指具有单晶硅太阳能电池的集成电路及其生产方法。
背景技术
电力提供操作集成电路的动力。然而,有一些集成电路是用在没有可靠供电或供电不理想的地方。举例而言,物联网涉及嵌埋于许多消费性产品中的运算装置经由互联网的互连,诸如可穿戴式装置、无线传感器等。此互连可通过具有长期、可携式电源供应器的较低功率装置来促成。电力能通过电池或硬件布线(hard-wired)供电器来提供,但电池最终会耗尽电量,而且硬件布线供电器并非所有位置都有且移动性有限。
能够产生自有电力的集成电路可用在没有硬件布线供电器或硬件布线供电器不理想的位置、以及视需要监控与变更电池亦不理想的位置中。远程供电器可用的一种技术为太阳能电池的使用。太阳能电池从光产生电,但所产生的电量取决于太阳能电池的面积与效率。集成电路的尺寸大小随着时间缩减,以致在集成电路上太阳能电池可用的空间更小。
因此,希望提供具备太阳能电池的集成电路,其(1)有效率地利用可用空间以及(2)有效率地从光产生电。另外,希望提供具有太阳能电池的集成电路,其中太阳能电池生产不昂贵并且利用的是已在在集成电路中使用的组件与材料。此外,本具体实施例的其它期望特征及特性经由随后的【具体实施方式】及随附权利要求书,搭配附图以及【背景技术】,将变得显而易知。
发明内容
所提供的是集成电路及其生产方法。在一例示性具体实施例中,集成电路包括衬底,其具有握把层、上覆于该握把层的埋置型绝缘体层、及上覆于该埋置型绝缘体层的主动层。该握把层与该主动层包括单晶硅。晶体管上覆于该埋置型绝缘体层。太阳能电池位在该握把层内,并且安置成使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间。该太阳能电池包括与太阳能电池外层接触部电连通的太阳能电池外层、及与太阳能电池内层接触部电连通的太阳能电池内层。该等太阳能电池内层与外层为单晶硅。
另一具体实施例中提供一种集成电路。该集成电路包括衬底,其具有握把层、上覆于该握把层的埋置型绝缘体层、及上覆于该埋置型绝缘体层的主动层。晶体管上覆于该埋置型绝缘体层,其中该晶体管包括源极、漏极、栅极、及下伏于该栅极的沟道。太阳能电池位在该握把层内,使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间。该太阳能电池包括与太阳能电池外层接触部电连通的太阳能电池外层、及与太阳能电池内层接触部电连通的太阳能电池内层。该沟道比该栅极更靠近该太阳能电池。
又另一具体实施例中提供一种生产集成电路的方法。本方法包括形成上覆于埋置型绝缘体层的晶体管,以及形成下伏于该埋置型绝缘体层的太阳能电池,使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间。该太阳能电池包括与太阳能电池外层接触部电连通的太阳能电池外层、及与太阳能电池内层接触部电连通的太阳能电池内层。该等太阳能电池内层与外层主要包括不同类型的导电性决定杂质,并且该等太阳能电池内层与外层为单晶硅。
附图说明
本发明的具体实施例将在下文中搭配以下图式来说明,其中相同的组件符号表示相似的组件,并且其中:
图1至9根据例示性具体实施例,在截面图中绘示一种集成电路及其生产方法。
具体实施方式
以下的实施方式本质上仅属于例示性,而且用意不在于限制各项具体实施例或应用及其用途。再者,用意不在于受限于先前背景或以下详细说明中所介绍的任何理论。本发明的具体实施例大体上是针对集成电路及其制作方法。可将本文中所述的各项工作及过程并入更全面性的程序或过程,其具有未在本文中详述的附加步骤或功能。特别的是,集成电路制造的各个步骤属于众所周知,所以,为了简便起见,许多习知步骤在本文中将只有简述或将遭到全部省略,而不提供众所周知的过程细节。在本文中所述的例示性具体实施例中,硅绝缘体(SOI)衬底的握把层侧形成单晶硅太阳能电池。
请参阅图1的侧截面图中所示的例示性具体实施例。集成电路10包括绝缘体上覆硅衬底12(SOI衬底),其中SOI衬底12包括握把层14、上覆于握把层14的埋置型绝缘体层16、及上覆于埋置型绝缘体层16的主动层18。“上覆”一词于本文中使用时,意为“上方”,使得中介层可落于上覆组件(在这项实施例中为主动层18)与下伏组件(在这项实施例中为埋置型绝缘体层16)之间或“上”,使得该上覆组件实体接触该下伏组件。此外,“上覆”一词意为通过上覆组件的垂直线亦通过下伏组件,使得上覆组件至少有一部分直接位在下伏组件的至少一部分上方。据了解,可移动集成电路10而使得相对“上方”和“下方”的位置改变,因此,对“垂直”线的参照意为约与衬底表面20垂直的线。大体上,集成电路10可顺着任何方向来操作。在图式的方向方面,用了诸如“顶端”、“底端”、“上方”、“底下”等空间相对用语。将了解的是,空间相对用语的用意在于除了图中所示方向以外,另外还含括装置在使用或操作时的不同方向。因此,例示性用语“上方”与“底下”各可含括上面或下面任一者的方向,端视装置的方向而定。装置可按另一种方式来配向(例如转90度或转成其它方向),并且本文中使用的空间相对描述符号从而可照样予以诠释。
在一例示性具体实施例中,主动层18包括单晶硅材料,但替代具体实施例中可使用其它材料。“单晶硅”于本文中使用时,为一种主要包括硅(50或以上重量百分比的硅)的材料,其中硅中可存在其它材料,诸如导电性决定杂质(掺质)、或其它杂质。单晶硅具有延展型结晶结构,其中可将导电性决定杂质及/或其它杂质并入结晶结构。单晶硅可具有超过一种晶体结构,使得晶体中可容忍断口或间隙,但连续性结晶结构主导材料,与基质中的离散晶体截然不同。单晶硅可包括各种浓度的导电性决定杂质,其中导电性决定杂质的浓度可足以使在不同具体实施例中的单晶硅半导电或导电。
导电材料大体上具有约1×10-4或更小奥姆公尺的电阻率,绝缘材料大体上具有约1×104或更大奥姆公尺的电阻率,并且半导电性材料具有介于约1×10-4奥姆公尺至约1×104奥姆公尺之间的电阻率。埋置型绝缘体层16为电绝缘体,并且包括电绝缘材料,在一例示性具体实施例中可使用诸如二氧化硅,但在替换具体实施例中可使用诸如蓝宝石或其它电绝缘材料。握把层14对SOI衬底12提供机械强度及稳定性,并且在一例示性具体实施例包括单晶硅。在一例示性具体实施例中,握把层14亦为半导电性材料。“半导体材料”包括单晶硅材料,例如:半导体产业中典型使用的较纯或轻度掺有杂质的单晶硅材料,也包括多结晶硅材料,以及与其它诸如锗、碳及类似元素搀和的硅。半导体材料亦包括诸如较纯及掺有杂质的锗、砷化镓、氧化锌、玻璃及类似者等其它材料。
一或多个浅沟槽隔离结构22置于衬底12内。浅沟槽隔离结构22为电绝缘体,并且在一些具体实施例中包括二氧化硅,但在替代具体实施例中则使用其它材料。在所示具体实施例中,浅沟槽隔离结构22从衬底表面20附近穿过主动层18及埋置型绝缘体层16延伸入握把层14,但在替代具体实施例中,浅沟槽隔离结构22可在埋置型绝缘体层16或其它位置终止。
上覆于衬底12形成并图型化接触光阻层6。接触光阻层6(及下文所述的其它光阻层)可通过旋转涂布来沉积,并且通过以穿过具有透明区段及不透明区段的屏蔽的光或其它电磁辐射进行曝照来图型化。光在光阻中造成化学变化,使得曝露部分或未曝露部分能遭受选择性移除。所欲位置可用有机溶剂来移除,而接触光阻层6仍维持上覆于衬底12的其它区域。接触光阻层6(及下文所述的其它光阻层)可视需要地包括顶端及/或底端抗反射涂料及/或硬罩(图未示)。有许多抗反射涂料可用,包括无机与有机化合物,例如:氮化钛或有机硅氧烷。氮化钛可使用四甲基胺钛(tetramethylamidotitanium)及三氟化氮通过化学气相沉积来沉积,而有机硅氧烷可通过旋转涂布来沉积。抗反射涂料可改善光阻图型化期间的准确度及关键尺寸。氮化硅可当作硬罩使用,其中氮化硅能使用氨及二氯硅烷通过低压化学气相沉积来形成。
请参阅图2中所示的一例示性具体实施例,并继续参照图1,一或多个接触位置8通过从接触位置8移除主动层18及埋置型绝缘体层16所形成。接触位置8为衬底12的已移除主动层18及埋置型绝缘体层16而从顶端使握把层14曝露的部分。主动层18及埋置型绝缘体层16分别使用对主动层18及绝缘体层16的材料具有选择性的蚀刻剂,以反应性离子蚀刻来选择性移除。如下文所述,使接触位置8更完全地被显影并且并入集成电路10。在一些具体实施例中,接触位置8置于相邻的浅沟槽隔离结构22之间,其中接触位置8自一个浅沟槽隔离结构22延展至相邻的浅沟槽隔离结构。
如图3的一例示性具体实施例中所示,上覆于衬底12形成并图型化视需要的深太阳能井光阻层24。穿过深太阳能井光阻层24的开口,在衬底12的握把层14内形成视需要的深太阳能井26。握把层14包括导电性决定杂质,并且深太阳能井26包括不同类型的导电性决定杂质,使得深太阳能井26与下伏的握把层14之间形成P-N结。传导率判定杂质(共两种类型)的总浓度在深太阳能井26中比在下伏的握把层14中更大,对于不同井体内或衬底内形成的井体大体上尤其如此。在一例示性具体实施例中,握把层14主要包括P型导电性决定杂质,并且深太阳能井26主要包括N型导电性决定杂质,但在替代具体实施例中反过来是可以的。“主要”一词于本文中使用时,若参考P型及/或N型导电性决定杂质,意为比其它类型的导电性决定杂质存在更多参考的导电性决定杂质。若大致参考组件,以该组件的总重量计,“主要”一词意为该组件包括浓度为约50重量百分比或更大重量百分比的列举组件或材料。握把层14中P型导电性决定杂质的浓度小于深太阳能井26中N型导电性决定杂质的浓度,所以,N型导电性决定杂质主要(相比于其余P型导电性决定杂质)负责行为深太阳能井(behavior deep solar well)26。
在一例示性具体实施例中,深太阳能井26通过穿过衬底表面20布植“N”型导电性决定杂质(即掺质)作为离子所形成。“N”型导电性决定杂质一般包括磷、砷及/或锑,但也可使用其它材料。“P”型导电性决定杂质一般包括硼、铝、镓及铟,但也可使用其它材料。离子布植涉及在电场影响下对传导率判定杂质进行电离并将离子推入衬底12中。深太阳能井26可接着经退火以修复来自离子布植过程的晶体损坏、电活化导电性决定杂质、以及重分布半导体材料内的导电性决定杂质。如此,深太阳能井26在离子布植与退火过程之后包括单晶硅。退火过程能广泛使用不同温度,例如范围自约摄氏500度(℃)至约1200℃的温度。在替换具体实施例中,延迟退火过程,直到形成其它井体为止。握把层14以导电性决定杂质布植的部分形成太阳能电池外层92,下面有更完整的说明。如此,太阳能电池外层92包括浓度比深太阳能井26更小且比下文所述所有其它井体更小的导电性决定杂质。
图4绘示上覆于衬底12形成并图型化视需要的深偏压井光阻层30的一具体实施例。接着通过布植导电性决定杂质在握把层14中形成视需要的深偏压井32,使得深偏压井32中与深太阳能井26中有不同的主要导电性决定杂质。这在深太阳能井26与深偏压井32之间产生P-N结。在所示具体实施例中,深太阳能井26下伏于全部深偏压井32,这两者皆下伏于埋置型绝缘体层16。介于深太阳能井26与深偏压井32之间的P-N结作用在于防止深太阳能井26的操作干扰上覆于深偏压井32的电气组件及直接上覆于深偏压井32的埋置型绝缘体层16的操作。
如图5所示,上覆于衬底12形成并图型化视需要的浅井光阻层34。接着,视需要地穿过衬底表面20将导电性决定杂质植入握把层14,以形成浅偏压井36及/或浅太阳能井38其中的一或多者。浅偏压井36及浅太阳能井38主要包括与太阳能电池外层92相反类型的导电性决定杂质。浅偏压井36通过相对于太阳能电池外层92的位置与浅太阳能井38有所区分。浅偏压井36置于深偏压井32内。因此,浅偏压井36未与太阳能电池外层92直接接触,所以,浅偏压井36与太阳能电池外层92分开。在所示具体实施例中,浅偏压井36通过深太阳能井26及深偏压井32与太阳能电池外层92分开。浅太阳能井38直接接触太阳能电池外层92,并且在介于浅太阳能井38与太阳能电池外层92之间的交会处形成P-N结。
深偏压井32及浅偏压井36两者在本文中都称为偏压井,并且深太阳能井26及浅太阳能井38两者在本文中都称为太阳能电池内层94。所示集成电路10包括第一侧40及第二侧42,其中第一侧40包括(多个)偏压井,并且第二侧42无偏压井。在集成电路10包括偏压井的具体实施例中,该等偏压井置于深太阳能井26与埋置型绝缘体层16之间,所以,有偏压井的具体实施例亦包括深太阳能井26。第一侧40的所示具体实施例包括深偏压井32及浅偏压井36,但在有偏压井的替换具体实施例中,深太阳能井26与埋置型绝缘体层16之间可以有一或多个偏压井。在一些具体实施例中,集成电路10可包括一或多个深太阳能井26但无浅太阳能井38,或集成电路10可包括深与浅两太阳能井26、38,或集成电路10可不包括深太阳能井26而仅包括一或多个浅太阳能井38。所示具体实施例包括深与浅两太阳能井26、38以说明可能的不同具体实施例。在所有具体实施例中,集成电路10包括太阳能电池外层92及某形式的太阳能电池内层94。
请参阅图6,栅极绝缘体层50上覆于衬底12并于接触位置8内形成,并且栅极层52上覆于栅极绝缘体层50形成。栅极绝缘体层50为电绝缘体,并且栅极层52为导电体。在一项具体实施例中,栅极绝缘体层50包括高K介电材料,其通过原子层沉积所形成,但在替换具体实施例中,可使用其它绝缘材料,诸如热二氧化硅。一种例示性高K介电材料为氧化铪,其能使用肆(二甲胺)铪与水通过原子层沉积来沉积,但其它高K介电材料亦属可能。栅极层52可包括多晶硅,其具有浓度至少足以使栅极层52导电的导电性决定杂质,其中多晶硅可在硅烷环境中通过低压化学气相沉积来形成。在一替代具体实施例中,栅极层52可以是以取代金属栅极取代的牺牲层,其它导电材料亦属可能。
接着,上覆于栅极层52形成并图型化栅极光阻层54。接着将栅极层52与栅极绝缘体层50的未遭由光阻层54包覆的部分移除以形成栅极56与栅极绝缘体58,如继续参照图6在图7中所示。在有多晶硅栅极层52的具体实施例中,可使用溴化氢以电浆蚀刻移除栅极层52,但在替代具体实施例中,可使用对多晶硅具有选择性的许多其它蚀刻剂。在有二氧化碳栅极绝缘体层50的具体实施例中,可使用四氟化碳以反应性离子蚀刻将栅极绝缘体层50移除,但亦可利用其它蚀刻剂或蚀刻技术。
如图7所示,可上覆于衬底12形成第一源极/漏极光阻层60。接着,可在通过第一源极/漏极光阻层60曝露的区域中,通过布植导电性决定杂质在主动层18中形成源极62与漏极64。亦将导电性决定杂质植入握把层14以形成太阳能电池内层接触部82及浅偏压井接触部84。沟道66是下伏于介于源极62与漏极64之间的栅极56而置。在所示具体实施例中,形成有第一源极/漏极光阻层60的源极62与漏极64、以及太阳能电池内层接触部82与浅偏压井接触部84全都主要包括“N”型导电性决定杂质。在一替代具体实施例中,形成并且微影图型化屏蔽,以及可自下伏的单晶硅起,通过磊晶生长来形成源极62、漏极64、太阳能电池内层接触部82与浅偏压井接触部84。源极62、漏极64、太阳能电池内层接触部82及浅偏压井接触部84为导电体,并且以上的其它形成技术亦属可能。
(多个)太阳能电池内层接触部82(在所示具体实施例中,一者用于深太阳能井26且另一者用于浅太阳能井38)包括在集成电路的第一侧40上与深太阳能井26电连通的太阳能电池内层接触部82、及在集成电路的第二侧42上与浅太阳能井38电连通的另一太阳能电池内层接触部82。浅偏压井接触部84与浅偏压井36电连通。以上已说明深与浅太阳能井26、38及深与浅偏压井32、36的形成。这些井体各直接触及接触部,包括用于深、浅太阳能井26与38的(多个)太阳能电池内层接触部82、及用于浅偏压井36的浅偏压井接触部84。互相触及的井体与接触部主要包括相同类型的导电性决定杂质,并且该等接触部是用于将各个井体整合到集成电路10内。
如图8所示,接着可上覆于衬底12形成并图型化第二源极/漏极光阻层70。源极62与漏极64接着可在主动层18中以与第一源极/漏极光阻层60所用相反类型的导电性决定杂质形成,诸如一例示性具体实施例中的“P”型导电性决定杂质。第二源极/漏极光阻层70亦经图型化以使握把层14透过接触位置8曝露,并且亦形成主要包括与源极62和漏极64同类型导电性决定杂质的接触部。在有“P”型导电性决定杂质的所示具体实施例中,形成太阳能电池外层接触部76及深偏压井接触部78。太阳能电池外层接触部76与太阳能电池外层92电连通,并且深偏压井接触部78与深偏压井32电连通。在一替代具体实施例中,如上述,可形成屏蔽,并且可磊晶形成源极62、漏极64、太阳能电池外层接触部76及深偏压井接触部78。
如上述,所形成的全部接触部主要包括与相关联井体同类型的导电性决定杂质。集成电路10亦包括上覆于埋置型绝缘体层16的主动层18中所形成的一或多个晶体管72,其中包括“N”与“P”型两种晶体管72。与源极62和漏极64同时形成接触部有助于使所需微影过程数减到最少,但其它生产技术亦属可能。亦可上覆于埋置型绝缘体层16形成其它类型的电子组件(图未示),诸如电容器、电阻器、二极管、电感器、熔丝、记忆胞等。在替换具体实施例中,可将其它类型的晶体管72或技术用于生产晶体管72。许多晶体管结构及生产技术可用在替代具体实施例中,诸如形成具有鳍片的晶体管72、形成具有取代金属栅极的晶体管等。
在一项例示性具体实施例中,太阳能电池外层92、太阳能电池外层接触部76、深偏压井32及深偏压井接触部78主要包括“P”型导电性决定杂质。深与浅太阳能井26、38、(多个)太阳能电池内层接触部82、浅偏压井36及浅偏压井接触部84主要包括“N”型导电性决定杂质。反过来亦属可能,而且有更多或更少井体的替代具体实施例亦属可能。大体上,相比于(多个)相邻井体,各接续井体具有相反类型的导电性决定杂质。
在本说明书中,深与浅太阳能井26、38称为“太阳能电池内层94”,并且其内所形成的井体外侧的握把层14称为“太阳能电池外层92”,如上述。太阳能电池外层92为集成电路10外部的光先接触的层。太阳能电池86是由太阳能电池内层94与太阳能电池外层92所形成,各与电连接组合。电连接为太阳能电池内层接触部82及太阳能电池外层接触部76。如本文中所述,太阳能电池内层与外层94、92主要包括不同类型的导电性决定杂质,并且可将相关联的太阳能电池内层与外层接触部82、76并入集成电路10的电源供应器。举例而言,太阳能电池内层与外层接触部82、76可与电容器(图未示)电连通以暂时储存电力。太阳能电池内层与外层为单晶硅,所以,太阳能电池86为单晶硅类型的太阳能电池。
各种其它技术可视需要地用于改善太阳能电池86的效能,如图9的一例示性具体实施例中所示。太阳能电池光表面88为握把层14与太阳能电池外层92的底端表面,并且太阳能电池86中可利用握把层14的整个底端表面(太阳能电池光表面88)。在所示具体实施例中,蚀刻太阳能电池光表面88以形成锯齿状表面,并且在太阳能电池光表面88形成与太阳能电池外层92直接接触的太阳能电池抗反射涂料90。在本说明书中,太阳能电池抗反射涂料90被视为太阳能电池86的部分,但太阳能电池抗反射涂料90属于任选。在一例示性具体实施例中,将太阳能电池光表面88施作成呈锯齿状,因为已发现这不仅使反射降低,还使太阳能电池86的总体效率提升。锯齿状表面可使用六氟化硅与氧而以反应性离子蚀刻形成,但也可用其它技术。太阳能电池抗反射涂料90可包括氮化硅,其可使用氨与二氯硅烷通过反应性离子蚀刻来沉积。在替换具体实施例中,太阳能电池抗反射涂料90可包括不同材料、或附加层。可在集成电路制造过程中的几乎任何阶段形成视需要的锯齿状表面及/或太阳能电池抗反射涂料90,因为这些技术被应用于握把层14的底端。
太阳能电池86与晶体管72位在埋置型绝缘体层16的相反侧,其中晶体管72包括沟道66与栅极56。沟道66比栅极56更靠近太阳能电池86,因为太阳能电池86下伏于晶体管72与埋置型绝缘体层16。将握把层14用于太阳能电池86具有优点。太阳能电池所产生的能量与该太阳能电池的表面面积有关。在上述具体实施例中,安置诸如晶体管72的电子组件并未牺牲表面面积,因为集成电路10可嵌装有朝外面向潜在光源的太阳能电池光表面88。如此,集成电路10包括单晶硅类型太阳能电池86,其为较有效率类型的太阳能电池86,与太阳能电池光表面88的大表面面积组合。太阳能电池光表面88的表面面积约与整个集成电路10的表面面积一样。大的太阳能电池光表面88与有效率类型的太阳能电池86的组合为集成电路10提供相对较大的远程电源供应。
尽管前述详细说明中已介绍至少一项例示性具体实施例,应领会的是,仍然存在大量变例。亦应领会的是,例示性具体实施例仅为实施例,并且用意不在于以任何方式限制本申请案的范畴、适用性或组态。反而,前述详细说明将会为所属领域技术人员提供用于实施一或多项具体实施例的便利路图,要理解的是,如随附权利要求书中所提,可就例示性具体实施例中所述组件的功能及配置施作各种变更而不会脱离此范畴。
Claims (20)
1.一种集成电路,包含:
衬底,其包含握把层、上覆于该握把层的埋置型绝缘体层、及上覆于该埋置型绝缘体层的主动层,其中,该握把层包含单晶硅且该主动层包含单晶硅;
晶体管,其上覆于该埋置型绝缘体层;
太阳能电池,其位在该握把层内,使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间,其中,该太阳能电池包含与太阳能电池外层接触部电连通的太阳能电池外层、与太阳能电池内层接触部电连通的太阳能电池内层,并且其中,该太阳能电池内层与该太阳能电池外层为单晶硅;
深偏压井,其下伏于该埋置型绝缘体层与该晶体管,其中,该深偏压井上覆于该太阳能电池内层,以及
深偏压井接触部,其与该深偏压井电连通。
2.如权利要求1所述的集成电路,其中:
该太阳能电池外层接触部与该太阳能电池外层主要包含相同类型的导电性决定杂质;以及
该太阳能电池内层接触部与该太阳能电池内层主要包含相同类型的导电性决定杂质。
3.如权利要求1所述的集成电路,进一步包含:
太阳能电池光表面,其位在该太阳能电池外层上;以及
抗反射层,其接触该太阳能电池光表面。
4.如权利要求3所述的集成电路,其中,该太阳能电池光表面呈锯齿状。
5.如权利要求1所述的集成电路,其中,该深偏压井与该太阳能电池内层主要包含不同类型的导电性决定杂质。
6.如权利要求1所述的集成电路,进一步包含:
浅偏压井,其下伏于该晶体管,其中,该浅偏压井上覆于该深偏压井;以及
浅偏压井接触部,其与该浅偏压井电连通。
7.如权利要求1所述的集成电路,其中,该太阳能电池外层主要包含P型导电性决定杂质,并且该太阳能电池内层主要包含N型导电性决定杂质。
8.如权利要求7所述的集成电路,进一步包含:
深偏压井,其下伏于该埋置型绝缘体层,其中,该深偏压井主要包含P型导电性决定杂质。
9.如权利要求1所述的集成电路,其中:
其中,该太阳能电池外层与该太阳能电池内层主要包括不同类型的导电性决定杂质。
10.如权利要求1所述的集成电路,其中:
该晶体管包含源极、漏极、栅极、及下伏于该栅极的沟道,其中,该沟道包含单晶硅。
11.如权利要求10所述的集成电路,其中,该沟道比该栅极更靠近该太阳能电池。
12.如权利要求1所述的集成电路,其中,该太阳能电池内层包含:
浅太阳能井,其接触该埋置型绝缘体层;以及
深太阳能井。
13.如权利要求12所述的集成电路,进一步包含:
深偏压井,其置于该深太阳能井与该埋置型绝缘体层之间。
14.一种集成电路,包含:
衬底,其包含握把层、上覆于该握把层的埋置型绝缘体层、及上覆于该埋置型绝缘体层的主动层;
晶体管,其上覆于该埋置型绝缘体层,其中,该晶体管包含源极、漏极与栅极、及下伏于该栅极的沟道;以及
太阳能电池,其位在该握把层内,使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间,其中,该太阳能电池包含与太阳能电池外层接触部电连通的太阳能电池外层、与太阳能电池内层接触部电连通的太阳能电池内层,其中,该沟道比该栅极相对于该太阳能电池而言更靠近该太阳能电池,该太阳能电池内层包含与该埋置型绝缘体层接触的浅太阳能井,并且其中,该太阳能电池内层进一步包含深太阳能井。
15.如权利要求14所述的集成电路,其中:
该太阳能电池外层为单晶硅;以及
该太阳能电池内层为单晶硅。
16.如权利要求14所述的集成电路,其中:
该太阳能电池外层包含太阳能电池光表面;以及其中,该太阳能电池进一步包含接触该太阳能电池光表面的抗反射层。
17.如权利要求14所述的集成电路,进一步包含:
深偏压井,其置于该太阳能电池内层与该埋置型绝缘体层之间。
18.如权利要求17所述的集成电路,进一步包含:
浅偏压井,其置于该深偏压井与该埋置型绝缘体层之间,其中,该浅偏压井主要包含与该太阳能电池内层相同类型的导电性决定杂质。
19.如权利要求17所述的集成电路,进一步包含:
深偏压井接触部,其与该深偏压井电连通。
20.一种生产集成电路的方法,包含:
形成上覆于埋置型绝缘体层的晶体管;
形成深偏压井,其下伏于该埋置型绝缘体层与该晶体管;
形成深偏压井接触部,其与该深偏压井电连通;以及
形成太阳能电池,其下伏于该埋置型绝缘体层,使得该埋置型绝缘体层介于该太阳能电池与该晶体管之间,其中,该太阳能电池包含与太阳能电池外层接触部电连通的太阳能电池外层、与太阳能电池内层接触部电连通的太阳能电池内层,其中,该太阳能电池外层与该太阳能电池内层主要包括不同类型的导电性决定杂质,其中,该太阳能电池内层与该太阳能电池外层为单晶硅,并且其中,该太阳能电池内层下伏于该深偏压井。
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CN109599406A (zh) | 2019-04-09 |
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