CN109596639A - Defect detecting system and defect inspection method - Google Patents
Defect detecting system and defect inspection method Download PDFInfo
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- CN109596639A CN109596639A CN201811454359.0A CN201811454359A CN109596639A CN 109596639 A CN109596639 A CN 109596639A CN 201811454359 A CN201811454359 A CN 201811454359A CN 109596639 A CN109596639 A CN 109596639A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Abstract
A kind of defect detecting system and defect inspection method, system include: locating module, and the locating module is suitable for obtaining the coordinate information of wafer surface defects；Location analysis module, the location analysis module is suitable for analyzing the coordinate information, and determines the characteristics defect region in wafer；Sampling distribution module, the sampling distribution module are suitable for determining the Sampling characters defect in each characteristics defect region surface defect according to the instruction of the first sampling number；Image collection module, described image obtain the image information that module is suitable for obtaining each Sampling characters defect.The performance of the defect detecting system is improved.
Description
Technical field
The present invention relates to semiconductor test field more particularly to a kind of defect detecting systems and defect inspection method.
Background technique
Wafer needs to detect crystal column surface after manufacturing process, judges that manufacturing process is by detecting wafer
It is no to be normally carried out.Defects detection to crystal column surface is an important content.
In general, crystal column surface can have a certain number of defects, analyzed for the defect of crystal column surface, so as to
It notes abnormalities in time, and then technique is improved.
However, the performance of the existing system to wafer surface defects detection is poor.
Summary of the invention
Problems solved by the invention is to provide a kind of defect detecting system and defect inspection method, to improve defects detection system
The performance of system.
To solve the above problems, the present invention provides a kind of defect detecting system, locating module, the locating module is suitable for obtaining
Take the coordinate information of wafer surface defects；Location analysis module, the location analysis module are suitable for carrying out the coordinate information
Analysis, and determine the characteristics defect region in wafer；Sampling distribution module, the sampling distribution module are suitable for taking out according to first
The Sampling characters defect in each characteristics defect region surface defect is determined in the instruction of sample number；Image collection module, described image obtain
Modulus block is suitable for obtaining the image information of each Sampling characters defect.
Optionally, the locating module includes light field dark field scanning machine.
Optionally, the location analysis module, sampling distribution module and described image obtain module and integrate.
Optionally, the location analysis module includes: characteristic function library module, and the characteristic function library module is adapted to provide for
Several characteristic functions；Characteristics analysis module, the characteristics analysis module are suitable for receiving the coordinate information of locating module offer,
And match the coordinate information with each characteristic function, the location information in characteristics defect region is exported according to matching result.
Optionally, the sampling distribution module includes human-computer interaction interface, allocation rule library module and distributing center module；
The human-computer interaction interface is suitable for receiving the instruction of the first sampling number, and the instruction of the first sampling number is passed to distributing center module；
The allocation rule library module is adapted to provide for several allocation rules, and any one allocation rule is transmitted to distributing center mould
Block；The distributing center module be suitable for receive locating module offer the coordinate information and location analysis module offer
The information in characteristics defect region, the distributing center module be suitable for according to the first sampling number instruction and it is received it is described any one
Allocation rule determines the Sampling characters defect in each characteristics defect region surface defect.
Optionally, the location analysis module is further adapted for determining the intrinsic defect region in wafer, the intrinsic defect
Region is the region in wafer except characteristics defect region；The sampling distribution module is further adapted for being instructed according to the second sampling number true
Make the sampling intrinsic defect in intrinsic defect region surface defect；Described image obtains module, and to be further adapted for obtaining each sampling intrinsic
The graphical information of defect.
Optionally, it includes: image capture module that described image, which obtains module, and described image acquisition module is suitable for described in reception
The location information of Sampling characters defect, and acquire the image information of the Sampling characters defect.
Optionally, described image obtains module further include: stochastic sampling module, the stochastic sampling module are suitable for wafer
Surface defect carries out random sampling, determines the random sampling defect in wafer surface defects；Described image acquisition module is also suitable
In the location information of the reception random sampling defect, and acquire the image information of the random sampling defect.
The present invention also provides a kind of defect inspection methods, comprising: provides the defect detecting system of above-mentioned any one；It provides
Wafer；The coordinate information of wafer surface defects is obtained using locating module；Using location analysis module to the coordinate information into
Row analysis, and determine the characteristics defect region in wafer；It is determined using sampling distribution module according to the instruction of the first sampling number
Sampling characters defect in each characteristics defect region surface defect；The figure of each Sampling characters defect is obtained using image collection module
As information.
Optionally, the locating module includes light field dark field scanning machine；The light field dark field scanning machine includes scanning
Chamber and the scanning head in scanning chamber；The method packet of the coordinate information of wafer surface defects is obtained using locating module
It includes: the wafer is placed in the scanning chamber, the scanning head is located at the top of the wafer；Drive the scanning
Probe is scanned the crystal column surface, to obtain the coordinate information of wafer surface defects.
Optionally, the location analysis module includes: characteristic function library module, and the characteristic function library module is adapted to provide for
Several characteristic functions；Characteristics analysis module；The coordinate information is analyzed using location analysis module, and determines wafer
In characteristics defect region method include: the characteristics analysis module receive locating module offer the coordinate information, and
The coordinate information is matched with each characteristic function, the location information in characteristics defect region is exported according to matching result.
Optionally, the sampling distribution module includes human-computer interaction interface, allocation rule library module and distributing center module；
Determine that the Sampling characters in each characteristics defect region surface defect lack according to the instruction of the first sampling number using sampling distribution module
Sunken method includes: that the first sampling number of input is instructed to human-computer interaction interface；The human-computer interaction interface refers to the first sampling number
Order passes to distributing center module；Any one allocation rule is transmitted to distributing center module by the allocation rule library module；
The distributing center module determines that each feature lacks according to the instruction of the first sampling number and any one received described allocation rule
Fall into the Sampling characters defect in region surface defect.
Compared with prior art, technical solution of the present invention has the advantage that
In the defect detecting system that technical solution of the present invention provides, defect detecting system includes location analysis module and sampling
Distribution module.The location analysis module is suitable for analyzing the coordinate information of the wafer surface defects, and determines crystalline substance
Characteristics defect region in circle.The sampling distribution module is suitable for determining each characteristics defect region according to the instruction of the first sampling number
Sampling characters defect in surface defect.Described image obtains the image information that module is suitable for obtaining each Sampling characters defect.This
Sample avoids passing through the defects of random sampling missing feature defect area point, and testing result accurate response is enabled to go out lacking for product
The situation of falling into, notes abnormalities, it is ensured that the stable purpose of product yield in time to reach.To sum up, defect detecting system is improved
Performance.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of defect detecting system in one embodiment of the invention；
Fig. 2 is the flow chart of defect inspection process in one embodiment of the invention；
Fig. 3 to Fig. 5 is the structural schematic diagram of defect inspection process in one embodiment of the invention.
Specific embodiment
As described in background, the performance of the existing system to wafer surface defects detection is poor.
A kind of defect inspection method, comprising: light field dark field scanning machine is provided；Image collection module, described image are provided
Obtaining module includes stochastic sampling module and image capture module；Wafer surface defects are obtained using light field dark field scanning machine
Coordinate information；It is sampled using coordinate information of the stochastic sampling module to defect point；Image capture module is lacked to what is extracted
Trapping spot carries out Image Acquisition.Defect point is analyzed according to the image information of defect point later.
When defect point is when the distribution of some regions of wafer is more special, it is necessary to the defect on the special area surface
Point is analyzed.However, it is therefore possible to can omit this since stochastic sampling module is sampled with randomness defect point
The defect point on special area surface, cause in this way to wafer surface defects analyze and it is not perfect, the reality of reactor product cannot be prepared
Border defect condition.It is subsequent also to need to repeat or detect manually, so that a large amount of manpowers and time can be wasted.
To solve the above-mentioned problems, the present invention provides a kind of defect detecting system, comprising: locating module, the positioning mould
Block is suitable for obtaining the coordinate information of wafer surface defects；Location analysis module, the location analysis module are suitable for the coordinate
Information is analyzed, and determines the characteristics defect region in wafer；Sampling distribution module, the sampling distribution module are suitable for root
The Sampling characters defect in each characteristics defect region surface defect is determined according to the instruction of the first sampling number；Image collection module, institute
State the image information that image collection module is suitable for obtaining each Sampling characters defect.The performance of the defect detecting system is mentioned
It is high.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
One embodiment of the invention provides a kind of defect detecting system, and the defect detecting system is suitable for lacking crystal column surface
It is trapped into capable detection, referring to FIG. 1, including:
Locating module 100, the locating module 100 are suitable for obtaining the coordinate information of wafer surface defects；
Location analysis module 120, the location analysis module 120 is suitable for analyzing the coordinate information, and determines
Characteristics defect region in wafer out；
Sampling distribution module 130, the sampling distribution module 130 are suitable for determining each feature according to the instruction of the first sampling number
Sampling characters defect in defect area surface defect；
Image collection module 140, described image obtain the image information that module 140 is suitable for obtaining each Sampling characters defect.
The locating module 100 includes light field dark field scanning machine.
The light field dark field scanning machine includes scanning chamber and the scanning head in scanning chamber.
Locating module 100 can not only obtain the coordinate information of the defect of crystal column surface, moreover it is possible to obtain the size letter of each defect
Breath.The size information for the defect that locating module 100 obtains is the rough size of defect.
The location analysis module 120, sampling distribution module 130 and described image obtain module 140 and integrate.
The location analysis module 120 includes: characteristic function library module, and the characteristic function library module is adapted to provide for several
Characteristic function；Characteristics analysis module, the characteristics analysis module are suitable for receiving the coordinate information of locating module offer, and will
The coordinate information is matched with each characteristic function, and the location information in characteristics defect region is exported according to matching result.
The location analysis module 120 is further adapted for determining the intrinsic defect region in wafer, the intrinsic defect region
For the region except characteristics defect region in wafer；The sampling distribution module, which is further adapted for being instructed according to the second sampling number, to be determined
Sampling intrinsic defect in intrinsic defect region surface defect；Described image obtains module and is further adapted for obtaining each sampling intrinsic defect
Graphical information.
The sampling distribution module 130 includes human-computer interaction interface, allocation rule library module and distributing center module；It is described
Human-computer interaction interface is suitable for receiving the instruction of the first sampling number, and the instruction of the first sampling number is passed to distributing center module；It is described
Allocation rule library module is adapted to provide for several allocation rules, and any one allocation rule is transmitted to distributing center module；Institute
State the feature that distributing center module is suitable for receiving the coordinate information of locating module offer and location analysis module provides
Defect area information, the distributing center module are suitable for being advised according to the instruction of the first sampling number and any one received described distribution
Then, the Sampling characters defect in each characteristics defect region surface defect is determined.
It includes: image capture module that described image, which obtains module 140, and described image acquisition module is suitable for receiving the sampling
The location information of characteristics defect, and acquire the image information of the Sampling characters defect.
Described image obtains module further include: stochastic sampling module, the stochastic sampling module are suitable for lacking crystal column surface
It is trapped into row random sampling, determines the random sampling defect in wafer surface defects；Described image acquisition module is further adapted for receiving
The location information of the random sampling defect, and acquire the image information of the random sampling defect.
Described image acquisition module includes SEM scanning machine.
Correspondingly, another embodiment of the present invention also provides a kind of defect inspection method, referring to FIG. 2, the following steps are included:
S01: provide above-mentioned defect detecting system (with reference to Fig. 1)；
S02: wafer 200 is provided；
S03: the coordinate information of 200 surface defect of wafer is obtained using locating module 100；
S04: the coordinate information is analyzed using location analysis module, and determines the characteristics defect area in wafer
Domain；
S05: it is determined in each characteristics defect region surface defect using sampling distribution module according to the instruction of the first sampling number
Sampling characters defect；
S06: the image information of each Sampling characters defect is obtained using image collection module.
With reference to Fig. 3, the locating module 100 includes light field dark field scanning machine, and the light field dark field scanning machine includes
Scan chamber 101 and the scanning head 102 in scanning chamber 101.
It include: by the wafer 200 using the method that locating module 100 obtains the coordinate information of 200 surface defect of wafer
It is placed in the scanning chamber 101, the scanning head 102 is located at the top of the wafer 200；Drive the scanning head
102 pairs of 200 surfaces of wafer are scanned, to obtain the coordinate information of 200 surface defect of wafer.
Specifically, the coordinate information of 200 surface defect of wafer is with the presentation of defect distribution plan view.
The coordinate information is analyzed using location analysis module, and determines characteristics defect region in wafer
Method include: the characteristics analysis module receive locating module 100 offer the coordinate information, and by the coordinate information with
Each characteristic function is matched, and the location information in characteristics defect region is exported according to matching result.
Such as: a kind of characteristic function is linear function y1=f (x1), limits letter apart from qualified function and defect point quantity
Several combinations.
Wherein, x1 is the abscissa of defect point, and y1 is the ordinate of defect point.
Apart from qualified function be suitable for limit Adjacent defect point distance, such as limit Adjacent defect point distance be less than or equal to away from
From threshold value.
Defect point quantity qualified function is suitable for limiting while meeting linear function y1=f (x1) and apart from qualified function
Defect point quantity be more than or equal to amount threshold.
Such as: another characteristic function is the combination apart from qualified function and defect point quantity qualified function, and distance limits letter
Number is suitable for limiting the distance of Adjacent defect point, and the distance for such as limiting Adjacent defect point is less than or equal to distance threshold, defect point quantity
Qualified function is suitable for limiting the quantity for meeting the defect point apart from qualified function more than or equal to amount threshold.
The coordinate information is matched with each characteristic function, obtains the coordinate letter for being able to satisfy any one characteristic function
Region where breath is characterized defect area.If being unsatisfactory for any one characteristic function, illustrate there is no characteristics defect region.
With reference to Fig. 4, the quantity in the characteristics defect region in wafer 200 is several, several in order to be illustrated in Fig. 4
A characteristics defect region is respectively fisrt feature defect area 201, second feature defect area 202 and third feature defect area
203。
Fisrt feature defect area 201 is for example with 800 defect points, and second feature defect area 202 is for example with 10
A defect point, third feature defect area 203 is for example with 10 defect points.
The location analysis module is further adapted for determining that the intrinsic defect region in wafer, the intrinsic defect region are crystalline substance
Region in circle except characteristics defect region.
With reference to Fig. 5, determine that each characteristics defect region surface lacks according to the instruction of the first sampling number using sampling distribution module
Sampling characters defect in falling into.
Pumping in each characteristics defect region surface defect is determined according to the instruction of the first sampling number using sampling distribution module
The method of sample characteristics defect includes: that the first sampling number of input is instructed to human-computer interaction interface；The human-computer interaction interface is by first
Sampling number instruction passes to distributing center module；Any one allocation rule is transmitted in distribution by the allocation rule library module
Core module；The distributing center module is determined according to the instruction of the first sampling number and any one received described allocation rule
Sampling characters defect in each characteristics defect region surface defect.
In the present embodiment, further includes: the sampling distribution module determines intrinsic defect area according to the instruction of the second sampling number
Sampling intrinsic defect in field surface defect.Specifically, the second sampling number of input is instructed to human-computer interaction interface；The man-machine friendship
The instruction of second sampling number is passed to distributing center module by mutual interface；The allocation rule library module is by any one allocation rule
It is transmitted to distributing center module；The distributing center module is according to the instruction of the second sampling number and any one received described distribution
Rule determines the sampling intrinsic defect in intrinsic defect region surface defect.
Such as: the instruction of the first sampling number are as follows: 20 defects of sampling from fisrt feature defect area 201, from second feature
5 defects of sampling in defect area 202,5 defects of sampling from third feature defect area 203.The distributing center module
According to the instruction of the first sampling number and any one received described allocation rule, 201 surface of fisrt feature defect area is determined
The first Sampling characters defect in defect, the second Sampling characters defect in 202 surface defect of second feature defect area and
Third Sampling characters defect in 203 surface defect of third feature defect area.
Such as: the second sampling number instruction are as follows: 10 defects of sampling from intrinsic defect region.The distributing center module root
According to the instruction of the second sampling number and any one received described allocation rule, the pumping in intrinsic defect region surface defect is determined
Sample intrinsic defect.
In one embodiment, a kind of allocation rule are as follows: selected according to arrogant to the small sequence of the size of defect.
The distributing center module is further adapted for receiving the size information for the defect that locating module 100 provides.
Then, described image obtains the image information that module 140 obtains each Sampling characters defect.
In the present embodiment, described image obtains module 140 and obtains the image information of the first Sampling characters defect, second respectively
The image information of Sampling characters defect and the image information of third Sampling characters defect.
Specifically, the location information of image capture module the first Sampling characters defect of reception, the second Sampling characters defect
The location information of location information and third Sampling characters defect, and acquire the image information of the first Sampling characters defect, second
The image information of Sampling characters defect and the image information of third Sampling characters defect.
Later, to the image information of each first Sampling characters defect, the image information of the second Sampling characters defect, Yi Ji
The image information of three Sampling characters defects is analyzed.
If location analysis module does not determine characteristics defect region, using the stochastic sampling module to crystal column surface
Defect carries out random sampling, determines the random sampling defect in wafer surface defects；Described in described image acquisition module receives
The location information of random sampling defect, and acquire the image information of the random sampling defect.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of defect detecting system characterized by comprising
Locating module, the locating module are suitable for obtaining the coordinate information of wafer surface defects；
Location analysis module, the location analysis module is suitable for analyzing the coordinate information, and determines in wafer
Characteristics defect region；
Sampling distribution module, the sampling distribution module are suitable for determining each characteristics defect region table according to the instruction of the first sampling number
Sampling characters defect in planar defect；
Image collection module, described image obtain the image information that module is suitable for obtaining each Sampling characters defect.
2. defect detecting system according to claim 1, which is characterized in that the locating module includes the scanning of light field dark field
Board.
3. defect detecting system according to claim 1, which is characterized in that the location analysis module, sampling distribution mould
Block and described image obtain module and integrate.
4. defect detecting system according to claim 1, which is characterized in that the location analysis module includes: feature letter
Number library module, the characteristic function library module are adapted to provide for several characteristic functions；Characteristics analysis module, the characteristics analysis module
Suitable for receiving the coordinate information of locating module offer, and the coordinate information is matched with each characteristic function, according to
The location information in matching result output characteristics defect region.
5. defect detecting system according to claim 1, which is characterized in that the sampling distribution module includes human-computer interaction
Interface, allocation rule library module and distributing center module；The human-computer interaction interface is suitable for receiving the instruction of the first sampling number, and will
The instruction of first sampling number passes to distributing center module；The allocation rule library module is adapted to provide for several allocation rules, and will
Any one allocation rule is transmitted to distributing center module；The distributing center module is suitable for receiving locating module offer
The information in the characteristics defect region that the coordinate information and location analysis module provide, the distributing center module are suitable for according to the
The instruction of one sampling number and any one received described allocation rule, determine the sampling in each characteristics defect region surface defect
Characteristics defect.
6. defect detecting system according to claim 1, which is characterized in that the location analysis module is further adapted for determining
Intrinsic defect region in wafer, the intrinsic defect region are the region in wafer except characteristics defect region；The sampling
Distribution module is further adapted for instructing the sampling intrinsic defect determined in intrinsic defect region surface defect according to the second sampling number；Institute
Image collection module is stated to be further adapted for obtaining the graphical information of each sampling intrinsic defect.
7. defect detecting system according to claim 1, which is characterized in that it includes: that image is adopted that described image, which obtains module,
Collect module, described image acquisition module is suitable for receiving the location information of the Sampling characters defect, and acquires the Sampling characters
The image information of defect.
8. defect detecting system according to claim 7, which is characterized in that described image obtains module further include: random
Decimation blocks, the stochastic sampling module are suitable for carrying out random sampling to wafer surface defects, determine in wafer surface defects
Random sampling defect；Described image acquisition module is further adapted for receiving the location information of the random sampling defect, and acquires institute
State the image information of random sampling defect.
9. a kind of defect inspection method characterized by comprising
The power of offer wants defect detecting system described in 1 to 8 any one；
Wafer is provided；
The coordinate information of wafer surface defects is obtained using locating module；
The coordinate information is analyzed using location analysis module, and determines the characteristics defect region in wafer；
Determine that the sampling in each characteristics defect region surface defect is special according to the instruction of the first sampling number using sampling distribution module
Levy defect；
The image information of each Sampling characters defect is obtained using image collection module.
10. defect inspection method according to claim 9, which is characterized in that the locating module includes that light field dark field is swept
Retouch board；The light field dark field scanning machine includes scanning chamber and the scanning head in scanning chamber；Using positioning mould
The method that block obtains the coordinate information of wafer surface defects includes: that the wafer is placed in the scanning chamber, described to sweep
Retouch the top that probe is located at the wafer；The scanning head is driven to be scanned the crystal column surface, to obtain wafer table
The coordinate information of planar defect.
11. defect inspection method according to claim 9, which is characterized in that the location analysis module includes: feature letter
Number library module, the characteristic function library module are adapted to provide for several characteristic functions；Characteristics analysis module；
The method that the coordinate information is analyzed, and determines the characteristics defect region in wafer using location analysis module
It include: the coordinate information that the characteristics analysis module receives locating module offer, and by the coordinate information and each feature
Function is matched, and the location information in characteristics defect region is exported according to matching result.
12. defect inspection method according to claim 9, which is characterized in that the sampling distribution module includes man-machine friendship
Mutual interface, allocation rule library module and distributing center module；
Determine that the sampling in each characteristics defect region surface defect is special according to the instruction of the first sampling number using sampling distribution module
The method of sign defect includes: that the first sampling number of input is instructed to human-computer interaction interface；The human-computer interaction interface is sampled first
Number instruction passes to distributing center module；Any one allocation rule is transmitted to distributing center mould by the allocation rule library module
Block；The distributing center module determines each spy according to the instruction of the first sampling number and any one received described allocation rule
Levy the Sampling characters defect in defect area surface defect.
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| WO2021232606A1 (en) * | 2020-05-21 | 2021-11-25 | 深圳新视智科技术有限公司 | Defect mapping method |
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