CN109586158A - All solid state laser based on MOPA structure - Google Patents
All solid state laser based on MOPA structure Download PDFInfo
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- CN109586158A CN109586158A CN201910058542.7A CN201910058542A CN109586158A CN 109586158 A CN109586158 A CN 109586158A CN 201910058542 A CN201910058542 A CN 201910058542A CN 109586158 A CN109586158 A CN 109586158A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
Abstract
This application discloses a kind of all solid state lasers based on MOPA structure, comprising: laser oscillator and at least one level laser amplifier, laser oscillator generate amplified outgoing in seed laser incident laser amplifier；It include working media in laser amplifier and laser oscillator, working media is the crystal at least while adulterating er element and ytterbium element.The laser realizes the 1.55 micron waveband laser output of high power and high light beam quality using the double-doped crystal of erbium ytterbium as working media.
Description
Technical field
This application involves a kind of all solid state lasers based on MOPA structure, belong to laser device field.
Background technique
1.55 micron waveband laser are located at good propagation in atmosphere window to eye-safe, to the penetration capacity of cigarette, mist
By force.In addition, the wave band also exactly corresponds to the detection sensitive volume of the Ge and InGaAs detector of working and room temperature, it is not necessarily to cryogenic refrigeration
The detection and collection of laser signal can be realized.Because having the above advantages, 1.55 micron waveband laser are in laser radar, Laser Measuring
All there is important application value away from, three-dimensional imaging and target identification etc..
Using the double-doped solid laser material of 976 nano waveband semiconductor laser pumping erbium ytterbiums, it may be implemented 1.55 microns
The Solid State Laser of wave band exports.However, the double-doped solid laser material of erbium ytterbium can lead to thermal effect due to heat production in pumping process
It answers, excessively high fuel factor limits the output power or energy of 1.55 micron waveband laser, and reduces the quality of output beam.
Laser amplification technique: swash using the low energy (power) of laser oscillator output and high light beam quality laser as seed
Light (beam quality need to be met the requirements), is injected into one or more levels laser amplifier, can realize high-energy or high power
Beam quality higher output beam is obtained while laser operation.
The grade of main oscillations used by laser amplification technique-power amplification level structure is known as MOPA structure (Master
Oscillator Power Amplifier, master oscillator power amplifier).Existing 1.55 micron waveband laser of MOPA structure
Using Er-doped fiber as working media.Fiber lengths used in laser generally require several meters to tens meters, volume compared with
It is expensive to be huge.
Summary of the invention
According to the one aspect of the application, provide a kind of all solid state laser based on MOPA structure, the laser with
For the double-doped crystal of erbium ytterbium as working media, the 1.55 micron waveband laser that can be realized simultaneously high power and high light beam quality are defeated
Out.
The all solid state laser based on MOPA structure characterized by comprising laser oscillator and at least one level swash
Image intensifer, the laser oscillator generate amplified outgoing in the incident laser amplifier of seed laser；
It include working media in the laser amplifier and the laser oscillator, the working media is at least while
Adulterate the crystal of er element and ytterbium element.
Those skilled in the art can choose existing all kinds of laser oscillators and existing all kinds of laser amplifiers as needed, press
MOPA structure carries out optical path connection.Such as laser oscillator is 1.55 micron waveband laser oscillators；Laser amplifier is 1.55
Micron waveband laser amplifier.
By using the double-doped crystal of erbium ytterbium as working media, it can effectively improve and be generated under 976 nano waveband pump lights
The output power and beam quality of 1.55 micron waveband laser.
Laser amplifier series is set according to output laser power (or energy), laser amplifier series is more, and output swashs
Optical power is higher.
The all solid state laser shoot laser based on MOPA structure is 1.55 micron wavebands；The wavelength band is 1500
~1650 nanometers.
Preferably, the pumping source in the laser oscillator and the laser amplifier is all made of 976 nano wavebands and partly leads
Body laser.
Optionally, the laser oscillator is selected from CW optical laser action device or pulsed laser oscillator；Preferably, the arteries and veins
Impulse optical generator is selected from passively Q switched laser oscillator, acousto-optic Q modulation laser oscillator, electric-optically Q-switched laser oscillator or mode locking arteries and veins
Impulse optical generator；
Preferably, the laser amplifier be selected from single end face pump laser amplifier, double-end pumping laser amplifier or
Side-pumped laser amplifier.
Optionally, the laser oscillator includes: semiconductor laser, along pump light exit direction, successively optics is coaxially arranged
Focusing coupling microscope group, input hysteroscope, the first working media and the output cavity mirror of column, the semiconductor laser shoot laser is through institute
Focused in first working media after stating focusing coupling microscope group, focusings coupling microscope group and first working media according to
The connection of sequence optical path；The input hysteroscope is connect with the incidence surface optical path of first working media；The output cavity mirror with it is described
The light-emitting surface optical path of first working media connects；
First working media is connect with the laser amplifier optical path；
Preferably, the laser oscillator includes: Q-switching device, the light out of the Q-switching device and first working media
The connection of face optical path.Such as Q-switching device used is passive Q-adjusted crystal (such as Co2+:MgAl2O4).Those skilled in the art can be according to need
It wants, uses Q-switching device, in laser oscillator to realize the output of pulse seed laser.
Preferably, the incidence surface of the light-emitting surface of first working media and the Q-switching device is glued.First work is situated between
Matter and Q-switching device are glued, can improve device compact degree.
Optionally, the laser amplifier includes at least one level pumping system and the second working media.
The pumping system includes the focusing coupling microscope group and semiconductor laser, and the semiconductor laser outgoing swashs
Light is gathered in second working media after the focusing couples microscope group；
It preferably, include level-one pumping system and diode pumping system, level-one pumping system in the laser amplifier
System shoot laser enters from second working media end face and focuses in second working media；
The diode pumping system exit laser enters from another opposing end surface of the second working media and focuses on institute
It states in the second working media；
Preferably, incident second working media of the seed laser being emitted from first working media.
Multistage pumping system can be arranged according to shoot laser power in those skilled in the art in laser amplifier.
Optionally, the coupling microscope group that focuses includes: along the first convex of pump light exit direction successively optics arranged in co-axial alignment
Lens and the second convex lens, the semiconductor laser shoot laser sequentially pass through first convex lens and second convex lens
Mirror.
Optionally, all solid state laser based on MOPA structure includes third convex lens and optoisolator, described defeated
Hysteroscope is connect with the third convex lens optical path out, and the third convex lens is connected with the optoisolator optical path；
Or the output cavity mirror is connect with the optoisolator optical path, the optoisolator and the third convex lens optical path
Connection.
Third convex lens is for collimating seed laser；The signal that optoisolator is used to completely cut off in laser amplifier returns
It returns in laser oscillator.
Seed laser directly incidence can may also pass through incident second working media after optic path.Such as it is situated between in the first work
Setting plane mirror controls the transmission direction of seed laser in matter and the transmission optical path of the second working media, realizes accurate incident.
As needed deielectric-coating can be plated on the plane mirror used in reflection seed laser.It plates to 976 nanometer waves on plane mirror surface
The deielectric-coating of section high transmittance (transmitance is greater than 90%) and 1.55 micron waveband high reflectances (reflectivity is greater than 99.8%), one
Aspect is that most of pump light is enable to be incident in the second working media through plane mirror, is on the other hand to make 1.55 microns of kinds
Sub- laser can be largely reflected into the second working media.
Similarly, optical device can also be set on the emitting light path of 1.55 micron waveband laser of outgoing as needed,
To control laser emitting direction.
By will be plated in input hysteroscope and output cavity mirror on deielectric-coating, be plated on respectively the first working media incidence surface and
On light-emitting surface, the compactness of laser is improved.
Optionally, the crystal is selected from borate crystal, silicate crystal, phosphate crystal, tungstate crystal, molybdate
Crystal, YAG crystal (abbreviation of yttrium-aluminium-garnet, chemical formula Y3Al5O12) or YVO4At least one of (Yttrium Orthovanadate) crystal；
Preferably, the crystal is selected from RAl3(BO3)4Crystal, RCa4O(BO3)3Crystal, R2Sr3(BO3)4Crystal or
R2Si2O7At least one of crystal, wherein R is selected from Y (yttrium), Gd (gadolinium) or at least one element of Lu (lutetium).
Preferably, the crystal is selected from A3RM3Si2O14Crystal, wherein A is selected from least one of Ca, Sr or Ba element,
R is selected from least one of Nb or Ta element, and M is selected from least one of Al or Ga element.
Optionally, the working media is while adulterating the crystal of Ce elements, er element and ytterbium element；
Preferably, at the same adulterate Ce elements, er element and ytterbium element crystal be selected from silicate crystal, phosphate crystal,
Tungstate crystal, molybdate crystal, YAG crystal or YVO4At least one of crystal.
By adulterating Ce elements, the efficiency of crystalloid output laser can be further improved.
Optionally, the crystal is bonded crystals；
Preferably, the bonded crystals: using the RAl at least while adulterating er element and ytterbium element3(BO3)4Crystal with
RAl3(BO3)4Crystal is obtained by bonding method；
Or using the RAl at least while adulterating er element and ytterbium element3(BO3)4Crystal passes through the side of bonding with sapphire crystal
Method obtains, wherein R is selected from least one of Y, Gd or Lu element.
For example, bonded crystals are Er:Yb:YAl3(BO3)4/YAl3(BO3)4Bonded crystals.
Those skilled in the art can also be as needed by some components, such as the wave plate of λ/2, Faraday rotator, partially
Shake piece or grating etc., is individually or simultaneously placed in the appropriate location in Fig. 1, to realize the polarization fortune of 1.55 micron waveband Solid State Lasers
Turn or wavelength selection etc..
In the application, " optical path connection ", including light beam are transferred into third medium from first medium after second medium；
Also second medium is transferred into from first medium including light beam；It further include light beam after first medium outgoing, by multiple optics
Enter third medium after device transmission.Those skilled in the art can as needed carry out optical device by this field conventional arrangement
Arrangement, to realize beam propagation needs.Light beam includes but is not limited to pump light or fundamental wave of laser.
In the application, " end face " refers to the incidence of working media light beam or exit facet.
The beneficial effect that the application can generate includes:
1) all solid state laser provided herein based on MOPA structure, it is micro- as 1.55 using the double-doped crystal of erbium ytterbium
The working media of VHF band laser oscillator and amplifier can swash realizing high-energy or 1.55 micron waveband solid of high power
Light obtains high output beam quality while operating.
2) all solid state laser provided herein based on MOPA structure, compared with the prior art in use Er-doped fiber
As the MOPA structure laser of working media, 1.55 micron waveband all solid state laser of MOPA structure provided by the present application has
Device is more compact, advantage small in size and at low cost.Er-doped fiber used is expensive in the prior art, the application laser
It is middle to use crystal as working media, it can effectively reduce cost
Detailed description of the invention
Fig. 1 is all solid state laser structural schematic diagram based on MOPA structure in a kind of embodiment of the application；
Component and reference signs list:
| Component names | Appended drawing reference | Component names | Appended drawing reference |
| First semiconductor laser | 1 | Second semiconductor laser | 10 |
| First convex lens | 2 | 4th convex lens | 11 |
| Second convex lens | 3 | 5th convex lens | 12 |
| Input hysteroscope | 4 | First plane mirror | 13 |
| First working media | 5 | Second working media | 14 |
| Q-switching device | 6 | Second plane mirror | 15 |
| Output cavity mirror | 7 | 6th convex lens | 16 |
| Third convex lens | 8 | 7th convex lens | 17 |
| Optoisolator | 9 | Third semiconductor laser | 18 |
Specific embodiment
The application is described in detail below with reference to embodiment, but the application is not limited to these embodiments.
Embodiment 1
Referring to Fig. 1, all solid state laser provided by the present application based on MOPA structure, comprising: laser oscillator and laser
Amplifier.
Laser oscillator is 1.55 micron waveband laser oscillators, wherein the first working media 5 is the double-doped crystal of erbium ytterbium.Swash
Image intensifer is 1.55 micron waveband laser amplifiers, wherein the second working media 14 is the double-doped crystal of erbium ytterbium.
Laser oscillator include pumping system and along pump light exit direction successively the input hysteroscope 4 of optics arranged in co-axial alignment,
First working media 5, Q-switching device 6 and output cavity mirror 7.Pumping system includes semiconductor laser and focusing coupling microscope group.
Focus coupling microscope group include along pump light exit direction successively optics arranged in co-axial alignment the first convex lens 2 and second it is convex
Lens 3.After 976 the first semiconductor lasers of nano waveband 1 are emitted pump light, sequentially with the first convex lens 2 and the second convex lens 3
Optical path connection.The surface plating of hysteroscope 4 is inputted to 976 nano waveband high transmittances (transmitance is greater than 90%) and 1.55 micron wavebands
The deielectric-coating of high reflectance (reflectivity is greater than 99.8%).First working media 5 is the double-doped crystal of erbium ytterbium.7 surface of output cavity mirror
Plate the deielectric-coating to 1.55 micron waveband transmittances (such as transmitance is 3%).
The pump light of the first semiconductor laser 1 output of 976 nano waveband laser is emitted after over-focusing coupling mirror group
It focuses in the first working media 5.It inputs hysteroscope 4 to the element composition resonant cavity between output cavity mirror 7 and realizes 1.55 micron waves
The oscillation of Duan Jiguang.Q-switching device 6 can make 1.55 micron wavebands continuously run laser to become adjusting Q pulse laser.Intra resonant cavity point
Oscillating laser from output cavity mirror export.
In the present embodiment, laser amplifier includes the first pumping system, the second pumping system and the second working media 14.
Second working media 14 is the double-doped crystal of erbium ytterbium.First pumping system and the second pumping system generate laser and are respectively focused on second
In working media 14.
First pumping system includes the second semiconductor laser 10 of successively optics arranged in co-axial alignment, the 4th convex lens 11 and
Five convex lenses 12.4th convex lens 11 and the 5th convex lens 12 composition focus coupling microscope group.
Second pumping system includes the third semiconductor laser 18 of 976 nano wavebands of successively optics arranged in co-axial alignment,
Six convex lenses 16 and the 7th convex lens 17.
The shoot laser of first, second, third semiconductor laser 1,10,18 is 976 nano wavebands.
1.55 micron waveband Solid State Lasers of laser oscillator output, sequentially by third convex lens 8 (collimation) and light every
After device 9, after the reflection of the first plane mirror 13, as in seed laser injection laser amplifier.First plane mirror, 13 table
Deielectric-coating is plated in face, and the deielectric-coating is to 976 nano waveband high transmittances (transmitance is greater than 90%) and 1.55 micron waveband high reflections
Rate (reflectivity is greater than 99.8%).
Seed laser energy (power) after the second working media 14 is amplified, finally using the second plane mirror 15
It is exported after reflection.The plating of second plane mirror, 15 surface is to 976 nano waveband high transmittances (transmitance is greater than 90%) and 1.55 microns
The deielectric-coating of wave band high reflectance (reflectivity is greater than 99.8%).
First working media 5 and the second working media 14 are the double-doped crystal Er:Yb:YAl of erbium ytterbium3(BO3)4。
Q-switching device 6 is passive Q-adjusted crystal Co2+:MgAl2O4。
Embodiment 2
The difference from embodiment 1 is that: the first working media 5 is the double-doped crystal Er:Yb:Lu of erbium ytterbium2Si2O7；
Second working media 14 is the double-doped crystal Er:Yb:Lu of erbium ytterbium2Sr3(BO3)4。
Embodiment 3
The difference from embodiment 1 is that: Q-switching device 6 is omitted, and the deielectric-coating direct plating on 4 surface of hysteroscope will be inputted the
The input end face of one working media 5, by the deielectric-coating direct plating of output cavity mirror 7 the first working media 5 output end face.
Embodiment 4
The difference from embodiment 1 is that: the first working media 5 is the double-doped crystal Er:Yb:YAl of erbium ytterbium3(BO3)4/YAl3
(BO3)4Bonded crystals.
Embodiment 5
The difference from embodiment 1 is that: by the input end face glue of the output end face of the first working media 5 and Q-switching device 6
It closes.
Embodiment 6
The difference from embodiment 1 is that: the first pumping system emergent light focuses on the second working media in laser amplifier
On 14 end face；The emergent light of the second pumping system focuses on another opposing end surface of the second working media 14 in laser amplifier
On.
Embodiment 7
The difference from embodiment 1 is that: omit the second pumping system.The emergent light of first pumping system focuses on the second work
Semiconductor laser pumping system on the side for making medium 14, as side.
Embodiment 8
The difference from embodiment 1 is that: by the first pumping system, the second pumping system and the second working media 14 as the
First order laser amplifier.The second seed of 1.55 micron wavebands of amplification output swashs after seed laser incidence first order laser amplifier
Light is emitted in incident second level laser amplifier after second level amplification.
Second level laser amplifier configurations are identical as first order laser amplifier.
To laser-quality, energy produced by gained laser in embodiment 1, by existing method, using laser power or energy
Meter, laser beam analyzer measure.Gained laser: beam quality factor M2<1.5；Gained laser energy: 10mJ energy
Or 100W power.
The laser can guarantee beam quality and energy in pumping process, can avoid beam quality and energy by fuel factor
Limitation.
The above is only several embodiments of the application, not does any type of limitation to the application, although this Shen
Please disclosed as above with preferred embodiment, however not to limit the application, any person skilled in the art is not taking off
In the range of technical scheme, a little variation or modification are made using the technology contents of the disclosure above and is equal to
Case study on implementation is imitated, is belonged in technical proposal scope.
Claims (10)
1. a kind of all solid state laser based on MOPA structure characterized by comprising laser oscillator and at least one level laser
Amplifier, the laser oscillator generate amplified outgoing in the incident laser amplifier of seed laser；The laser is put
It include working media in big device and the laser oscillator, the working media is at least while to adulterate er element and ytterbium element
Crystal.
2. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that described to be tied based on MOPA
The all solid state laser shoot laser of structure is 1.55 micron wavebands；
Preferably, the pumping source in the laser oscillator and the laser amplifier is all made of 976 nano waveband semiconductors and swashs
Light device.
3. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that the laser oscillator
Selected from CW optical laser action device or pulsed laser oscillator；
Preferably, the pulsed laser oscillator is selected from passively Q switched laser oscillator, acousto-optic Q modulation laser oscillator, electric-optically Q-switched
Laser oscillator or Mode-locked laser oscillator；
Preferably, the laser amplifier is selected from single end face pump laser amplifier, double-end pumping laser amplifier or side
Pump laser amplifier.
4. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that the laser oscillator
It include: semiconductor laser, along focusing coupling microscope group, the input hysteroscope, the of pump light exit direction successively optics arranged in co-axial alignment
One working media and output cavity mirror, the semiconductor laser shoot laser focus on described the after the focusing couples microscope group
In one working media, sequentially optical path is connect the focusing coupling microscope group with first working media；The input hysteroscope and institute
State the incidence surface optical path connection of the first working media；The output cavity mirror and the light-emitting surface optical path of first working media connect
It connects；
First working media is connect with the laser amplifier optical path；
Preferably, the laser oscillator includes Q-switching device, the light-emitting surface light of the Q-switching device and first working media
Road connection；
Preferably, the incidence surface of the light-emitting surface of first working media and the Q-switching device is glued.
5. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that the laser amplifier
Including at least one level pumping system and the second working media；
The pumping system includes the semiconductor laser and focuses coupling microscope group, and the semiconductor laser shoot laser passes through
It is focused in second working media after the focusing coupling microscope group.
6. all solid state laser according to claim 5 based on MOPA structure, which is characterized in that the laser amplifier
In include level-one pumping system and diode pumping system, the level-one pumping system shoot laser is from second working media end
Face enters and focuses in second working media；
The diode pumping system exit laser enters from another opposing end surface of the second working media and focuses on described
In two working medias.
7. all solid state laser according to claim 4 based on MOPA structure, which is characterized in that described to be tied based on MOPA
The all solid state laser of structure includes third convex lens and optoisolator, and the output cavity mirror and the third convex lens optical path connect
It connects, the third convex lens is connected with the optoisolator optical path；
Or the output cavity mirror is connect with the optoisolator optical path, the optoisolator and the third convex lens optical path connect
It connects.
8. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that the crystal is selected from boron
Hydrochlorate crystal, silicate crystal, phosphate crystal, tungstate crystal, molybdate crystal, YAG crystal or YVO4In crystal extremely
Few one kind；
Preferably, the crystal is selected from RAl3(BO3)4Crystal, RCa4O(BO3)3Crystal, R2Sr3(BO3)4Crystal or R2Si2O7Crystal
At least one of, wherein R is selected from Y, Gd or Lu at least one element；
Preferably, the crystal is selected from A3RM3Si2O14Crystal, wherein A is selected from least one of Ca, Sr or Ba element, R choosing
From at least one of Nb or Ta element, M is selected from least one of Al or Ga element.
9. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that the working media is
The crystal of Ce elements, er element and ytterbium element is adulterated simultaneously；
Preferably, while the crystal of Ce elements, er element and ytterbium element is adulterated selected from silicate crystal, phosphate crystal, wolframic acid
Salt crystal, molybdate crystal, YAG crystal or YVO4At least one of crystal.
10. all solid state laser according to claim 1 based on MOPA structure, which is characterized in that the crystal is key
Synthetic body；
Preferably, the bonded crystals: using the RAl at least while adulterating er element and ytterbium element3(BO3)4Crystal and RAl3
(BO3)4Crystal is obtained by bonding method；
Or using the RAl at least while adulterating er element and ytterbium element3(BO3)4Crystal and sapphire crystal are obtained by bonding method
, wherein R is selected from least one of Y, Gd or Lu element.
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Application publication date: 20190405 |