CN109585665A - A kind of light-emitting component and display device - Google Patents
A kind of light-emitting component and display device Download PDFInfo
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- CN109585665A CN109585665A CN201811456522.7A CN201811456522A CN109585665A CN 109585665 A CN109585665 A CN 109585665A CN 201811456522 A CN201811456522 A CN 201811456522A CN 109585665 A CN109585665 A CN 109585665A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
Abstract
The embodiment of the invention provides a kind of light-emitting component and display device, solve the problems, such as that the display device service life is low under prior art high temperature.A kind of light-emitting component provided in an embodiment of the present invention includes first electrode, second electrode and the multiple light emitting structures being arranged between first electrode and second electrode, one layer charge generating layer is wherein set between two neighboring light emitting structure, it include p-type charge generation layer and N-type charge generation layer in charge generation layer, the material of p-type charge generation layer is identical as the material of the hole injection layer in a light emitting structure in the two neighboring light emitting structure；And/or, the material of the N-type charge generation layer is identical as the material of the electron transfer layer in another light emitting structure in the two neighboring light emitting structure, reduce the transmitting potential barrier of electrons and holes, to reduce the driving voltage of light-emitting component, the power consumption for reducing light-emitting component extends the service life of display device.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of light-emitting component and display device.
Background technique
Influence of the service life of organic light emitting apparatus vulnerable to local environment temperature in the prior art, environment temperature raising cause
The decline of its service life.
Summary of the invention
In view of this, being solved in the prior art the embodiment of the invention provides a kind of light-emitting component and display device
Display device is due to temperature increases the problem of service life reduction.
For the purpose of the present invention, technological means and advantage is more clearly understood, below in conjunction with attached drawing to the present invention make into
One step is described in detail.Obviously, the described embodiments are only a part but not all of the embodiments of the present application.Base
Embodiment in the application, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall in the protection scope of this application.
According to an aspect of the present invention, a kind of light-emitting component that one embodiment of the invention provides, comprising:
First electrode；The second electrode of the first electrode side is set；And it is arranged in the first electrode and institute
The multiple light emitting structures stated between second electrode and be superposed, wherein the light emitting structure includes hole injection layer, and superposition is set
Set the hole injection layer side luminescent layer, be arranged in the luminescent layer far from the hole injection layer side electronics pass
Defeated layer；Wherein, charge generation layer is set between the two neighboring light emitting structure, and the charge generation layer includes that p-type charge produces
Generating layer and N-type charge generation layer, wherein one in the material of the p-type charge generation layer and the two neighboring light emitting structure
The material of the hole injection layer in a light emitting structure is identical；And/or the material of the N-type charge generation layer and adjacent two
The material of the electron transfer layer in another light emitting structure in a light emitting structure is identical.
In one embodiment, multiple light emitting structures include the first light emitting structure, described in first light emitting structure
Luminescent layer issues the light of blue；The first electrode is anode, and second electrode is cathode；Wherein, first light emitting structure is set
It sets on the surface of the first electrode.
In one embodiment, the material for issuing the luminescent layer in first light emitting structure of the light of blue is contaminated using fluorescence
Material is used as dopant.
In one embodiment, the light-emitting component includes two light emitting structures, respectively described first light emitting structure
And second light emitting structure of first light emitting structure far from the anode side is set, wherein second light-emitting junction
The luminescent layer of structure issues the light of yellow.
In one embodiment, the material of the luminescent layer in second light emitting structure is using fluorescent dye as doping
Agent
In one embodiment, the light emitting structure further includes being arranged between the hole injection layer and the luminescent layer
Hole transmission layer and the electron injecting layer that side of the electron transfer layer far from the luminescent layer is set, wherein described
The material of electron injecting layer is identical as the material of the N-type charge generation layer.
In one embodiment, the material of the N-type charge generation layer includes active metal and N-type organic material；And/or
The material of the p-type charge generation layer includes hole mobile material and P-type dopant.
In one embodiment, electronic barrier layer is additionally provided between the luminescent layer and the hole transmission layer, wherein institute
The lumo energy for stating electronic barrier layer is greater than the lumo energy of the material of main part in the luminescent layer.
In one embodiment, the difference of the lumo energy of the lumo energy of the electronic barrier layer and the luminescent layer is not less than
0.4ev。
As another side of the invention, the embodiment of the invention provides a kind of display devices, including substrate and setting to exist
A plurality of light-emitting elements on the substrate；Wherein, the structure of the light-emitting component uses the knot of the light-emitting component as described in aforementioned
Structure.
A kind of light-emitting component provided by the embodiment of the present invention, a light-emitting component are folded using multiple light emitting structures
Add, be attached between two neighboring light emitting structure with charge generation layer, wherein charge generation layer is with anode, the work of cathode
With.It wherein, include p-type charge generation layer and N-type charge generation layer, material and the phase of p-type charge generation layer in charge generation layer
The material of the hole injection layer in a light emitting structure in adjacent two light emitting structures is identical；And/or the N-type
The material of charge generation layer and the electron transfer layer in another light emitting structure in the two neighboring light emitting structure
Material is identical, so that electrons and holes reduce the transmitting potential barrier of electrons and holes in transmission process, to reduce
The driving voltage of light-emitting component reduces the power consumption of light-emitting component, extends the service life of light-emitting component, to extend display device
Service life.
Detailed description of the invention
Fig. 1 show a kind of structural schematic diagram of light-emitting component of one embodiment of the invention offer；
Fig. 2 show a kind of structural schematic diagram of light-emitting component of one embodiment of the invention offer；
Fig. 3 show a kind of structural schematic diagram of light-emitting component of one embodiment of the invention offer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
In the prior art since organic light emitting apparatus requires the brightness of display device high, in order to meet high brightness, issue
The material of the luminescent layer of blue light needs to select phosphorescent dopants, therefore the blue-light-emitting of B (blue) pixel in pixel unit
Material luminous efficiency is lower, when display screen at high temperature, relative to red illuminating material and green luminescent material, blue-light-emitting material
Material decaying is very fast, lower so as to cause the service life of blue subpixels, and then causes the service life of display screen lower, in order to
This technical problem is solved, multiple light emitting structures are connected and form one using charge generation layer in existing technical solution
A light-emitting component, the light-emitting component including multiple light emitting structures relative to identical light emission luminance by single light emitting structure
For light-emitting component, although the brightness of each light emitting structure in the light-emitting component of multiple light emitting structures is lower, each light-emitting junction
The material of luminescent layer in structure can not use phosphorescent dopants, and phosphorescent dopants are easy to produce violent decaying at high temperature, when
When the material of luminescent layer in each light emitting structure does not use phosphorescent dopants, the decaying speed of dopant at high temperature can be reduced
Degree, to increase the service life of display device.But the increase meeting of charge generation layer is so that be applied to the drive of light-emitting component
Dynamic voltage increases, therefore will increase power consumption, and then reduces the service life of display device.
In view of the above-mentioned problems, one embodiment of the invention provides a kind of light-emitting component, as shown in Figure 1, a kind of light-emitting component packet
First electrode 1, second electrode 2 and the multiple light emitting structures 3 being arranged between first electrode 1 and second electrode 2 are included, wherein phase
A layer charge generating layer 4 is set between adjacent two light emitting structures 3.Wherein, when first electrode is anode, second electrode is cathode；
When first electrode is cathode, second electrode is anode.Wherein, charge generation layer (abbreviation CGL) 4 includes the p-type electricity being superposed
Lotus generating layer (abbreviation P-CGL) 41 and N-type charge generation layer (abbreviation N-CGL) 42, as shown in Figure 2, wherein p-type charge generates
Layer 41 plays the role of anode for injecting holes into a light emitting structure in two neighboring light emitting structure 3.N-type electricity
Lotus generating layer 42 plays the work of cathode for injecting electrons into another light emitting structure in two neighboring light emitting structure 3
With so that each light emitting structure can normal luminous so that light-emitting component can issue the light of more high brightness.Its
Middle light emitting structure 3 include hole injection layer (abbreviation HIL) 31, be arranged in the side of hole injection layer 31 luminescent layer (EML) 33,
The electron transfer layer (ETL) 34 of that side of the luminescent layer 33 far from hole injection layer 31 is set；As shown in Figure 2.Wherein, p-type
The material phase of the material of charge generation layer 41 and the hole injection layer 31 in a light emitting structure in two neighboring light emitting structure
Together；And/or the electronics in another light emitting structure in the material of N-type charge generation layer 42 and two neighboring light emitting structure passes
The material of defeated layer 34 is identical.Hole injection layer 31 is identical as the material of p-type charge generation layer 41, i.e., identical film layer, relative to P
For when the material difference of type charge generation layer 41 and hole injection layer 31, the identical hole injection layer 31 of material and p-type charge
Generating layer 41, which is equivalent to, becomes a film layer for two film layers, therefore, injects hole from p-type charge generation layer 41 when hole and injects
When layer 31, the potential barrier of hole-transfer is reduced.Similarly, when N-type charge generation layer 42 is identical as the material of electron transfer layer 34,
When electronics is injected into electron transfer layer 34 from N-type charge generation layer 42, the potential barrier of electron transmission is reduced, to reduce hair
The voltage that optical element uses, extends the service life of light-emitting component, and then extends the service life of display device.
In one embodiment, it is including being arranged in hole injection layer (abbreviation HIL) 31 in hair that light emitting structure 3, which further includes setting,
Hole transmission layer (HTL) 32 between photosphere (EML) 33 is arranged in hole transmission layer 32；And it is arranged in electron transfer layer 34
Electron injecting layer (EIL) 35 far from 33 that side of luminescent layer, as shown in figure 3, N-type charge generation layer 42 injects electrons into electricity
In sub- implanted layer 35, electron injecting layer 35 is injected electrons into electron transfer layer 34, wherein the material of electron injecting layer 35 with
The material of N-type charge generation layer is identical, when electronics is injected into electron injecting layer 35 from N-type charge generation layer 42, reduces electricity
The potential barrier of son transmitting extends the service life of light-emitting component, in turn to further reduced the voltage that light-emitting component uses
Extend the service life of display device.
In one embodiment, the material of N-type charge generation layer 42 includes active metal and N-type organic material；And/or p-type
The material of charge generation layer 41 includes hole mobile material and P-type dopant, and wherein organic hole transport material is selected from poly- pair
Phenylene ethylene (PPv) class, polysilanes, triphenylmethane, tri-arylamine group, hydrazone class, pyrazolines, chews azole, click at polythiophene class
One of azole, butadiene type or multiple combinations.
In one embodiment, electronic barrier layer is additionally provided between the luminescent layer 33 and hole transmission layer 32 in light emitting structure 3
(abbreviation EBL) 36, wherein the lumo energy of electronic barrier layer 36 is greater than the lumo energy of the material of main part in luminescent layer 33, such as
Shown in Fig. 2.At high temperature, electronic barrier layer 36 can be by the electronics in the electron type material in material used in luminescent layer 33
Enter in hole transmission layer 32 from luminescent layer 33, so that light emitting region will not drift to hole transmission layer 32, so that hair
Light region avoids that light-emitting component brightness at high temperature is low or even non-luminous phenomenon occurs in luminescent layer, therefore increases
The service life in service life of light-emitting component, and then increase the service life of display device.
In a further embodiment, the main body of the lumo energy of electronic barrier layer 36 and material used in luminescent layer 33
The difference of the lumo energy of material is not less than 0.4ev, i.e. the lumo energy of electronic barrier layer 36 subtracts material used in luminescent layer 33
The energy level difference obtained after the lumo energy of the material of main part of material is more than or equal to 0.4ev, further increases 33 institute of luminescent layer
The electronics in electron type material in the material used from entering difficulty in hole transmission layer 32 in luminescent layer 33, further such that
Light emitting region will not drift to hole transmission layer 32, so that light emitting region in luminescent layer, avoids light-emitting component at high temperature
Brightness is low or even non-luminous phenomenon occurs, therefore further increases the service life in service life of light-emitting component, and then increase aobvious
Show the service life of device.
In one embodiment, light-emitting component includes multiple light emitting structures, and plurality of light emitting structure includes issuing blue
First light emitting structure 3-1 of light and the second light emitting structure 3-2 that the first side light emitting structure 3-1 is set, and the first light-emitting junction
Structure 3-1 is arranged on the surface of anode, i.e., first electrode 1 is anode, and second electrode 2 is cathode, wherein the first light emitting structure 3-
1 and second is provided with charge generation layer 4 between light emitting structure 3-2, and wherein charge generation layer 4 includes p-type charge generation layer 41 and N
Type charge generation layer 42, the wherein surface (abbreviation HIL) of p-type charge generation layer 41 and the hole injection layer in the second light emitting structure
31 contacts inject hole for the second light emitting structure 3-1；The wherein electronics in N-type charge generation layer 42 and the first light emitting structure 3-2
The surface of implanted layer (abbreviation EIL) 35 contacts, and injects electronics for the first light emitting structure, as shown in Figure 2.
The second light emitting structure between charge generation layer 4 and cathode is injected due to being cathode for the second light emitting structure
Electronics, p-type charge generation layer 41 are therefore the second light emitting structure injection hole is injected into luminescent layer in the second light emitting structure 3-2
Electronics in 33 is more than hole.The first light emitting structure 3-1 between charge generation layer 4 and anode is the due to being anode
One light emitting structure 3-1 injects hole, and N-type charge generation layer 42 is that the first light emitting structure 3-1 injects electronics, therefore, is injected into the
Hole in two light emitting structure 3-1 is more than electronics, and issuing material used by the luminescent layer of blue light is mostly electron type matrix,
The ability for transmitting electronics is strong, original at cathode site if the light emitting structure for the light for issuing blue is arranged close to cathode
Light emitting structure in luminescent layer in electronics be just more than hole, if luminescent layer material transmitting electronic capability it is strong, then holding very much
Easily occur that electronics is rich and hole deficiency causes unbalanced phenomenon to occur, will lead to the service life reduction of blue light.But it will hair
The light emitting structure of blue light is arranged on anode out, due in the luminescent layer that is injected into the light emitting structure being arranged on anode
Hole is more than electronics, therefore the ability of the luminescent layer transmitting electronics in the light emitting structure of the light of sending blue is strong, then injustice occurs
The probability of the phenomenon that weighing apparatus is very low, and therefore, the probability for reducing blue lifetime is also low.
Therefore, the light emitting structure that the light of blue will be issued in the present embodiment is arranged on anode, will not reduce blue light
Service life will not be because of the hair for issuing blue light while increasing display device service life using the light emitting structure of superposition
The service life of display device is reduced caused by the setting of photo structure is improper.
Similarly, because the material of the luminescent layer in the light emitting structure of the light for the yellow that shines is mostly ambipolar material, i.e., to electricity
Son is very close with the transmittability in hole, and therefore, the light emitting structure that will either issue the light of yellow is arranged on anode also
It is to occur electronics in luminescent layer on cathode and the probability of the unbalanced phenomenon in hole is lower, therefore reduce the display device longevity
The probability of life is lower.
As long as should be appreciated that the embodiment of the present invention in light-emitting component include issue blue light light emitting structure, no matter its
His light emitting structure issues the light of what color, and the light emitting structure for issuing blue light is arranged on anode, when use superposition
Light emitting structure come while increasing display device service life, will not because of the light emitting structure for the light for issuing blue setting it is improper
Caused by reduce display device service life.
In a further embodiment, the material of the luminescent layer 33 of the first light emitting structure 3-1 of the light of lumiere blue is adopted
Use fluorescent dye as dopant, at high temperature, fluorescent dye is longer than the service life of phosphorescent coloring, therefore can increase light-emitting component
Service life, further increase the service life of display device.
In a further embodiment, light-emitting component includes first electrode 1, be arranged on the surface of first electrode
One light emitting structure 3-1 and second light emitting structure 3-2 of first light emitting structure far from the first light emitting structure side is set,
In, the luminescent layer in the first light emitting structure 3-1 issues the light (abbreviation EML-B) of blue, the luminescent layer in the second light emitting structure 3-2
The light (abbreviation EML-Y) of yellow is issued, first electrode 1 is anode, and second electrode 2 is cathode；Wherein, the first light emitting structure 3-1
It is provided with charge generation layer 4 between the second light emitting structure 3-2, wherein charge generation layer 4 includes p-type charge generation layer 41 and N
Type charge generation layer 42, the wherein surface (abbreviation HIL) of p-type charge generation layer 41 and the hole injection layer in the second light emitting structure
31 contacts inject hole for the second light emitting structure 3-1；The wherein electronics in N-type charge generation layer 42 and the first light emitting structure 3-2
The surface of implanted layer (abbreviation EIL) 35 contacts, and injects electronics for the first light emitting structure, as shown in Figure 2.
Under the action of anode, cathode and charge generation layer 4, the second light emitting structure 3-2 issues the light of yellow, and first shines
Structure 3-1 issues the light of blue, and entire light-emitting component then issues the light of white, which can be directly applied to show
For issuing the light of white in showing device, the sub-pixel of white light is as issued.It can also be according to concrete application scene in the hair
A multilayer filter is covered on optical element light direction, so that the light-emitting component issues the light of specific color, such as blue light,
Red light or green light.Light-emitting component in the embodiment of the present invention includes two light emitting structures, one of light emitting structure hair
Blue light out, for the light-emitting component by single light emitting structure with identical light emission luminance, in the light-emitting component
Blue-light-emitting structure brightness it is lower, therefore at high temperature, reduce the blue emitting material rate of decay, increase blue hair
The service life of photosphere, and then increase the service life of display device.In addition to this, because multiple light emitting structures carry out lamination
When setting, a charge generation layer will increase between two neighboring light emitting structure, and the increase of charge generation layer will increase application
Voltage on light-emitting component both sides, therefore for the light-emitting component for including single light emitting structure, multiple light emitting structures are folded
The power consumption of light-emitting component made of adding is relatively high, and therefore, two light emitting structures, which are superposed, is meeting making for extension display device
While with the service life, also make the power consumption of display device will not be too high.
The color of the light issued as, the number for the light emitting structure for including in light-emitting component and each light emitting structure can
To be selected according to practical application scene, for example, it may be situation as shown in Figure 2, i.e. light-emitting component include two hairs
Photo structure 3, one of light emitting structure 3 issue the light of blue, another light emitting structure 3 issues the light of yellow.But it is of the invention
Embodiment is not limited to this, such as can also be situation as follows: light-emitting component includes three light emitting structures 3, wherein three
A light emitting structure issues red light, blue light and green light respectively.Therefore, if light-emitting component can will issue it is identical or not
Light emitting structure with the light of color is superimposed, and can increase the brightness of light-emitting component, reduces the hair in single light emitting structure
Brightness so that under the high temperature conditions, extend the service life of each light emitting structure, and then extend light-emitting component with
And the service life of luminous display unit, the embodiment of the present invention is to the quantity of the light emitting structure for including in light-emitting component and each shines
The color for the light that structure is issued is not construed as limiting.
But if the light emitting structure being superimposed in light-emitting component is excessive, it will increase one between two neighboring light emitting structure
Charge generation layer, and the increase of charge generation layer will increase the voltage for being applied to light-emitting component both sides, therefore relative to including single
For the light-emitting component of a light emitting structure, the power consumption for the light-emitting component that multiple light emitting structures are formed by stacking is relatively high, will increase hair
The power consumption of optical element, therefore, in order to reduce power consumption, the quantity of the light emitting structure in light-emitting component is no more than three.
In a further embodiment, the material of the luminescent layer 33 in the second light emitting structure 3-2 of the light of yellow is issued
Using fluorescent dye as dopant, at high temperature, fluorescent dye is longer than the service life of phosphorescent coloring, therefore can increase the member that shines
The service life of part further increases the service life of display device.
The embodiment of the present invention also provides a kind of display device, including substrate and the multiple luminous members being disposed on the substrate
Part, wherein the structure of light-emitting component uses the structure of the light-emitting component as described in aforementioned, display dress provided in an embodiment of the present invention
It sets, by being superimposed multiple light emitting structures, a layer charge generating layer is set between two neighboring light emitting structure, wherein charge generates
Layer with anode, cathode function, for the light-emitting component by single light emitting structure with identical light emission luminance,
The brightness of each light emitting structure in the light-emitting component of multiple light emitting structures is lower, therefore the luminescent layer in each light emitting structure
Material can not use phosphorescent dopants, and phosphorescent dopants are easy to produce violent decaying at high temperature, therefore, when each light-emitting junction
When the material of luminescent layer in structure does not use phosphorescent dopants, the rate of decay of dopant at high temperature can be reduced, to increase
The service life of display device is added.Especially blue light luminescent layer can not use phosphorescent dopants.Especially blue light is sent out
Photosphere can not use the faster phosphorescent dopants of the rate of decay at high temperature, therefore at high temperature, blue emitting material decaying
Speed reduces, and increases the service life of blue light-emitting layer, and then increase the service life of display device.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, made any modification, equivalent replacement etc. be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of light-emitting component characterized by comprising
First electrode；
The second electrode of the first electrode side is set；
The multiple light emitting structures for being arranged between the first electrode and the second electrode and being superposed, wherein the hair
Photo structure includes hole injection layer, is superposed remote in the luminescent layer in the luminescent layer of the hole injection layer side, setting
Electron transfer layer from the hole injection layer side；And
Charge generation layer is arranged in setting between the two neighboring light emitting structure, and the charge generation layer includes: that p-type charge produces
Generating layer and N-type charge generation layer；
Wherein, the institute in a light emitting structure in the material of the p-type charge generation layer and the two neighboring light emitting structure
The material for stating hole injection layer is identical；And/or in the material of the N-type charge generation layer and the two neighboring light emitting structure
Another light emitting structure in the electron transfer layer material it is identical.
2. light-emitting component according to claim 1, which is characterized in that multiple light emitting structures include the first light emitting structure, institute
Stating the first light emitting structure includes the luminescent layer for issuing blue light；The first electrode is anode, and second electrode is cathode；Wherein,
First light emitting structure is arranged on the surface of the first electrode.
3. light-emitting component according to claim 2, which is characterized in that in first light emitting structure for issuing the light of blue
Luminescent layer material using fluorescent dye as dopant.
4. light-emitting component according to claim 2, which is characterized in that the light-emitting component includes two light-emitting junctions
Structure, respectively described first light emitting structure and be arranged in first light emitting structure far from the anode side second shine
Structure, wherein the luminescent layer of second light emitting structure issues the light of yellow.
5. light-emitting component according to claim 4, which is characterized in that the luminescent layer in second light emitting structure
Material is using fluorescent dye as dopant.
6. light-emitting component according to claim 1, which is characterized in that the light emitting structure further includes being arranged in the hole
Hole transmission layer and setting between implanted layer and the luminescent layer are in the electron transfer layer far from the luminescent layer side
Electron injecting layer, wherein the material of the electron injecting layer is identical as the material of the N-type charge generation layer.
7. light-emitting component according to claim 6, which is characterized in that the material of the N-type charge generation layer includes active
Metal and N-type organic material；And/or the material of the p-type charge generation layer includes hole mobile material and P-type dopant.
8. light-emitting component according to claim 6, which is characterized in that between the luminescent layer and the hole transmission layer also
It is provided with electronic barrier layer, wherein the lumo energy of the electronic barrier layer is greater than the material of main part in the luminescent layer
Lumo energy.
9. light-emitting component according to claim 8, which is characterized in that the lumo energy of the electronic barrier layer and the hair
The difference of the lumo energy of photosphere is not less than 0.4ev.
10. a kind of display device characterized by comprising
The a plurality of light-emitting elements of substrate and setting on the substrate；Wherein, the structure of the light-emitting component uses such as right
Go the structure of any light-emitting component of 1-9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687811A (en) * | 2019-10-17 | 2021-04-20 | 北京夏禾科技有限公司 | Organic electroluminescent device |
| WO2024000662A1 (en) * | 2022-07-01 | 2024-01-04 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
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