CN109585621A - 一种紫光led外延结构的制备方法及其结构 - Google Patents
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Abstract
本发明涉及一种紫光LED外延结构的制备方法及其结构,包括如下步骤:(1)蓝宝石衬底置于MOCVD中生长;(2)将温度调节至550°,所述蓝宝石衬底的上表面生长出AlN buffer层;(3)将温度调节至1050~1100°,所述AlN buffer层的上表面由下至上依次生长出高温GaN缓冲层、N‑型AlGaN阻挡层和N‑GaN层;(4)生长超晶格InGaN层,其中,所述超晶格InGaN层的周期数为3~10层;(5)生长Alx1Iny1Ga1‑x1‑y1N/Alx2Iny2Ga1‑x2‑y2N层量子阱结构。本发明提供的一种紫光LED外延结构的制备方法及其结构,其中,量子阱、垒均为AlInGaN材料生长,减少由材料不同带来的应力影响,从而提高了发光效率。
Description
技术领域
本发明涉及LED外延设计技术领域,具体涉及一种紫光LED外延结构的制备方法及其结构。
背景技术
LED(Light Emitting Diode,发光二极管)具有体积小、坚固耐用、发光波段可控性强、光效高、低热损耗、光衰小、节能、环保等优点,受到了广泛应用。近年来,LED在显示屏、仪表背光源、交通信号显示、汽车尾灯及车内仪表显示和装饰、以及照明等领域得到广泛应用。但LED照明的普及,其发光效率有待进一步提高。目前传统紫光LED外延结构,由于阱垒材料不同会产生很大应力,形成的内建电场影响发光效率。
发明内容
针对上述技术问题,本发明提供了一种紫光LED外延结构的制备方法及其结构,其中,量子阱、垒均为AlInGaN材料生长,减少由材料不同带来的应力影响,从而提高了发光效率。
为实现上述目的,本发明提供了一种紫光LED外延结构的制备方法,包括如下步骤:(1)蓝宝石衬底置于MOCVD中生长;(2)将温度调节至550°,所述蓝宝石衬底的上表面生长出AlN buffer层;(3)将温度调节至1050~1100°,所述AlN buffer层的上表面由下至上依次生长出高温GaN缓冲层、N-型AlGaN阻挡层和N-GaN层;(4)生长超晶格InGaN层,其中,所述超晶格InGaN层的周期数为3~10层;(5)生长Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层量子阱结构。
作为优选方案,所述Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层的周期数为5~20层。
作为优选方案,所述量子阱结构尺寸如下:厚度为20~40nm,阱宽为3~5nm,垒17~35nm。
作为优选方案,所述量子阱结构中Al组分中的X1在0~0.1之间渐变,所述垒中si为delta掺杂。
作为优选方案,在步骤(5)后还包括步骤(6)生长GaN/Alx3Ga1-x3N周期数为3~10的LB层。
作为优选方案,所述LB层中X3的取值范围为0.1~0.2。
作为优选方案,在步骤(6)后还包括步骤(7)生长P型AlGaN/InGaN周期数为6~15的超晶格电子阻挡层。
作为优选方案,在步骤(7)后还包括步骤(8)生长高浓度掺杂的P-GaN层。
为实现上述相同目的,本发明还提供了一种紫光LED外延结构,由下至上依次包括:蓝宝石衬底、AlN buffer层、高温GaN缓冲层、N-型AlGaN阻挡层,N-GaN层和超晶格InGaN层。
作为优选方案,所述超晶格InGaN层的上表面由下至上依次包括Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层量子阱结构、LB层、超晶格电子阻挡层和高浓度掺杂的P-GaN层,其中,所述量子阱结构尺寸如下:厚度为20~40nm,阱宽为3~5nm,垒17~35nm,所述量子阱结构中Al组分中的X1在0~0.1之间渐变,所述垒中si为delta掺杂。
上述技术方案所提供的一种紫光LED外延结构的制备方法及其结构,将蓝宝石衬底置于MOCVD中生长,首先生长550°左右的AlN buffer,升温至1050~1100°生长高温GaN缓冲层、N-型AlGaN阻挡层,N-GaN层,3~10周期的超晶格InGaN层,有利于电流扩散,同时减弱漏电通道的穿透效果,降低正向电压,改善ESD,此外,量子阱、垒均为AlInGaN材料生长,减少由材料不同带来的应力影响,从而提高了发光效率。
附图说明
图1为本发明的结构示意图。
其中:1、蓝宝石衬底;2、AlN buffer层;3、高温GaN缓冲层;4、N-型AlGaN阻挡层;5、N-GaN层;6、超晶格InGaN层;7、Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层;8、LB层;9、超晶格电子阻挡层;10、P-GaN层。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
请参见图1,本实施例提供了一种紫光LED外延结构的制备方法,包括如下步骤:(1)蓝宝石衬底1置于MOCVD中生长;(2)将温度调节至550°,所述蓝宝石衬底1的上表面生长出AlN buffer层2;(3)将温度调节至1050~1100°,所述AlN buffer层2的上表面由下至上依次生长出高温GaN缓冲层3、N-型AlGaN阻挡层4和N-GaN层5;(4)生长超晶格InGaN层6,其中,所述超晶格InGaN层6的周期数为3~10层;(5)生长Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层7量子阱结构。具体地,通过将蓝宝石衬底1置于MOCVD中生长,首先生长550°左右的AlN buffer,升温至1050~1100°生长高温GaN缓冲层3、N-型AlGaN阻挡层4,N-GaN层5,3~10周期的超晶格InGaN层6,有利于电流扩散,同时减弱漏电通道的穿透效果,降低正向电压,改善ESD,此外,量子阱、垒均为AlInGaN材料生长,减少由材料不同带来的应力影响,从而提高了发光效率。
本实施例中,所述Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层7的周期数为5~20层;所述量子阱结构尺寸如下:厚度为20~40nm,阱宽为3~5nm,垒17~35nm,所述量子阱结构中Al组分中的X1在0~0.1之间渐变,从而增强应力,进而增强发光效率。此外,所述垒中si为delta掺杂,从而改善量子阱界面的陡峭度,抑制极化电场对紫外LED量子阱发光特性的影响,解决含Al量子阱材料质量劣化和效率下降等问题。
进一步地,在步骤(5)后还包括步骤(6)生长GaN/Alx3Ga1-x3N周期数为3~10的LB层8,其中,所述LB层8中X3的取值范围为0.1~0.2,通过设置LB层8,LB为超晶格结构,从而加强了阻挡电子能力。
更进一步地,在步骤(6)后还包括步骤(7)生长P型AlGaN/InGaN周期数为6~15的超晶格电子阻挡层9。在步骤(7)后还包括步骤(8)生长高浓度掺杂的P-GaN层10。
此外,本实施例还提供了一种紫光LED外延结构,由下至上依次包括:蓝宝石衬底1、AlN buffer层2、高温GaN缓冲层3、N-型AlGaN阻挡层4,N-GaN层5和超晶格InGaN层6。具体地,将蓝宝石衬底1置于MOCVD中生长,首先生长550°左右的AlN buffer,升温至1050~1100°生长高温GaN缓冲层3、N-型AlGaN阻挡层4,N-GaN层5,3~10周期的超晶格InGaN层6,有利于电流扩散,同时减弱漏电通道的穿透效果,降低正向电压,改善ESD,此外,量子阱、垒均为AlInGaN材料生长,减少由材料不同带来的应力影响,从而提高了发光效率。
进一步地,所述超晶格InGaN层6的上表面由下至上依次包括Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层7量子阱结构、LB层8、超晶格电子阻挡层9和高浓度掺杂的P-GaN层10,其中,所述量子阱结构尺寸如下:厚度为20~40nm,阱宽为3~5nm,垒17~35nm,所述量子阱结构中Al组分中的X1在0~0.1之间渐变,从而增强应力,进而增强发光效率。此外,所述垒中si为delta掺杂从而改善量子阱界面的陡峭度,抑制极化电场对紫外LED量子阱发光特性的影响,解决含Al量子阱材料质量劣化和效率下降等问题,此外,LB为超晶格结构,从而加强了阻挡电子能力。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和替换,这些改进和替换也应视为本发明的保护范围。
Claims (10)
1.一种紫光LED外延结构的制备方法,其特征在于,包括如下步骤:(1)蓝宝石衬底置于MOCVD中生长;(2)将温度调节至550°,所述蓝宝石衬底的上表面生长出AlN buffer层;(3)将温度调节至1050~1100°,所述AlN buffer层的上表面由下至上依次生长出高温GaN缓冲层、N-型AlGaN阻挡层和N-GaN层;(4)生长超晶格InGaN层,其中,所述超晶格InGaN层的周期数为3~10层;(5)生长Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层量子阱结构。
2.根据权利要求1所述的紫光LED外延结构的制备方法,其特征在于,所述Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层的周期数为5~20层。
3.根据权利要求1所述的紫光LED外延结构的制备方法,其特征在于,所述量子阱结构尺寸如下:厚度为20~40nm,阱宽为3~5nm,垒17~35nm。
4.根据权利要求1所述的紫光LED外延结构的制备方法,其特征在于,所述量子阱结构中Al组分中的X1在0~0.1之间渐变,所述垒中si为delta掺杂。
5.根据权利要求1所述的紫光LED外延结构的制备方法,其特征在于,在步骤(5)后还包括步骤(6)生长GaN/Alx3Ga1-x3N周期数为3~10的LB层。
6.根据权利要求5所述的紫光LED外延结构的制备方法,其特征在于,所述LB层中X3的取值范围为0.1~0.2。
7.根据权利要求5所述的紫光LED外延结构的制备方法,其特征在于,在步骤(6)后还包括步骤(7)生长P型AlGaN/InGaN周期数为6~15的超晶格电子阻挡层。
8.根据权利要求7所述的紫光LED外延结构的制备方法,其特征在于,在步骤(7)后还包括步骤(8)生长高浓度掺杂的P-GaN层。
9.一种紫光LED外延结构,其特征在于,由下至上依次包括:蓝宝石衬底、AlN buffer层、高温GaN缓冲层、N-型AlGaN阻挡层,N-GaN层和超晶格InGaN层。
10.根据权利要求9所述的紫光LED外延结构,其特征在于,所述超晶格InGaN层的上表面由下至上依次包括Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N层量子阱结构、LB层、超晶格电子阻挡层和高浓度掺杂的P-GaN层,其中,所述量子阱结构尺寸如下:厚度为20~40nm,阱宽为3~5nm,垒17~35nm,所述量子阱结构中Al组分中的X1在0~0.1之间渐变,所述垒中si为delta掺杂。
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