CN109585608A - A kind of silicon wafer cut by diamond wire pre-processing device - Google Patents
A kind of silicon wafer cut by diamond wire pre-processing device Download PDFInfo
- Publication number
- CN109585608A CN109585608A CN201811608021.6A CN201811608021A CN109585608A CN 109585608 A CN109585608 A CN 109585608A CN 201811608021 A CN201811608021 A CN 201811608021A CN 109585608 A CN109585608 A CN 109585608A
- Authority
- CN
- China
- Prior art keywords
- cavity
- silicon wafer
- diamond wire
- processing device
- wafer cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 239000010432 diamond Substances 0.000 title claims abstract description 14
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 14
- 238000007781 pre-processing Methods 0.000 title claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims description 16
- 210000002381 plasma Anatomy 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 235000008216 herbs Nutrition 0.000 abstract description 11
- 210000002268 wool Anatomy 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 8
- 239000000654 additive Substances 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000004065 wastewater treatment Methods 0.000 abstract description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of silicon wafer cut by diamond wire pre-processing devices, including cavity, one or more groups of plasma generators, conveyer system and exhaust emission system；The plasma generator is mounted on the upper surface of upper cavity and is connected to cavity, and the exhaust emission system is connected with cavity lower end surface and is connected to cavity；The conveyer system passes through the opening at left and right sides of cavity and extends to two sides；Copper coil is excited by radio-frequency power supply, generate electromagnetic oscillation, etching gas is passed through quartz reaction chamber by tracheae, and being excited after mixing by radio-frequency power supply is plasma, performs etching when silicon wafer passes through from below to silicon chip surface, uniformly tiny defect is left in silicon chip surface, these defects, which carry on the back to continue to corrode in texturing slot, is enlarged into suede structure, so that later period making herbs into wool effect is good, it is possible to reduce or substitution flocking additive, making herbs into wool cost and cost for wastewater treatment are reduced, cell piece transfer efficiency is improved.
Description
Technical field
The invention belongs to solar battery manufacturing fields, and in particular to a kind of silicon wafer cut by diamond wire pre-processing device.
Background technique
Under the trend that solar battery continues cost declining, silicon wafer cutting mode is generally changed into Buddha's warrior attendant wire cutting, gold
Rigid wire cutting silicon wafer, can be substantially reduced cutting cost, improve piece rate, while improving production efficiency, still, diamond wire is cut
It is smoother to cut silicon chip surface, defect is few, is not easy flannelette out in subsequent making herbs into wool process, causes reflectivity high, transfer efficiency
It is low；At present there are two types of widespread practices, one is flocking additive is used during making herbs into wool, improve pile effects, this side
Method has certain effect, but still reaches to the effect less than mortar cutting sheet, and sewage treatment is made to increase difficulty；Another
It is dry method making herbs into wool, directly generates light trapping structure with plasma bombardment, but this process equipment is expensive, increased costs are big.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of pretreatment of silicon wafer cut by diamond wire is provided and is set
It is standby, not only make silicon wafer meet the effect of cutting sheet, also reduce cutting cost, improves piece rate, while also improving life
Produce efficiency.
A kind of silicon wafer cut by diamond wire pre-processing device of the present invention, including cavity, one or more groups of plasmas hair
Raw device, conveyer system and exhaust emission system；
Symmetrical opening is provided at left and right sides of the cavity；
The plasma generator includes radio-frequency power supply, copper coil and quartz cover, and the copper coil is wrapped in quartz cover
Outer wall on, and one is connected with the positive grade of radio-frequency power supply, and the negative grade that other end is connected with the positive grade of radio-frequency power supply is connected；
The conveyer system includes driving motor, the gear with speed changer, chain, main drive roller, auxiliary driving roller and biography
Mesh belt is sent, the motor is connected with gear, and the gear is connected by chain with main drive roller, main drive roller and auxiliary driving
Transmission net band is connected between roller；The transmission shaft driven gear of the motor rotates so that chain-driving main drive roller rotates,
Make that transmission net band is driven to drive the rotation of auxiliary driving roller simultaneously；
The exhaust emission system includes corrosion-resistant air hose and the air pump that is connected with corrosion-resistant air hose；
The plasma generator is mounted on the upper surface of upper cavity and is connected to cavity, the exhaust emission system with
Cavity lower end surface is connected and is connected to cavity；The conveyer system passes through the opening at left and right sides of cavity and extends to two sides.
It is further improved, the quartz cover is connected to cavity.
It is further improved, the conveyer system is supported by four support columns.
It is further improved, the corrosion-resistant air hose is connected with cavity lower end surface and is connected to cavity.
It is further improved, is connected with etching gas inlet tube on the quartz cover.
It is further improved, quartzy the cover outer wall long 20cm, wide 20cm, high 20cm, wall thickness 5mm.
It is further improved, the diameter of the copper coil is 5mm.
The working principle of the invention: exciting copper coil by the radio-frequency power supply of 13.56MHz, 5000W, generate electromagnetic oscillation,
Then the etching gas in quartz cover is excited, the silicon wafer come to lower conveyor belt transmission is performed etching, left in silicon chip surface
Even tiny defect, then these defect silicon wafers are carried on the back to continue to corrode in texturing slot and are enlarged into suede structure；
The beneficial effects of the present invention are:
The present invention is to combine dry method making herbs into wool with wet-method etching, and effect is got well than a kind of any individually etching method, this sets
Standby structure is simple, and easy to operate, at low cost, work efficiency is fast, reduces the cost of enterprise's production, not only silicon wafer is made to meet cutting sheet
Effect, also reduce cutting cost, improve piece rate, while also improving production efficiency so that later period making herbs into wool effect is good,
Flocking additive can be reduced or be substituted, making herbs into wool cost and cost for wastewater treatment are reduced, improves cell piece transfer efficiency.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the structural schematic diagram of plasma generator.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings.
As shown in Figs. 1-2, a kind of silicon wafer cut by diamond wire pre-processing device of the present invention, including 2, one groups of cavity or
Multiple groups plasma generator 3, conveyer system and exhaust emission system；Symmetrical opening 1 is provided at left and right sides of the cavity；
The plasma generator is mounted on the upper surface of upper cavity and is connected to cavity, the exhaust emission system and cavity
Lower end surface is connected and is connected to cavity；The conveyer system passes through the opening at left and right sides of cavity and extends to two sides；
The plasma generator 3 includes radio-frequency power supply 31, the copper coil 32 and quartz cover 33 that diameter is 5mm, described
Copper coil is wrapped on the outer wall of quartz cover, and one is connected with the positive grade of radio-frequency power supply, the positive grade of other end and radio-frequency power supply
Connected negative grade is connected；It is connected with etching gas inlet tube 34 on the quartz cover, passes through the radio frequency of 13.56MHz, 5000W
Power supply excites copper coil, generates electromagnetic oscillation, then excites the etching gas in quartz cover, the silicon come to lower conveyor belt transmission
Piece performs etching, and the degree of etching is determined by plasma intensity and transmission speed；
The conveyer system include driving motor 5, the gear 6 with speed changer, chain 7, main drive roller 8, auxiliary driving roller 9 with
And transmission net band 10, the motor are connected with gear, the gear is connected by chain with main drive roller, main drive roller and
Transmission net band is connected between auxiliary driving roller；The transmission shaft driven gear of the motor rotates so that chain-driving main drive roller
Rotation, while making that transmission net band is driven to drive the rotation of auxiliary driving roller；The conveyer system is mainly used for the transmission work of silicon wafer, also
Transmission gear be installed control to control the drive speed of motor with this speed of transmission；Four ends of the conveyer system connect
Four support columns 11, so that it is more firm, more preferably supported；
The exhaust emission system includes corrosion-resistant air hose 12 and the air pump 13 that is connected with corrosion-resistant air hose, and exhaust gas is inhaled
Enter in waste gas treatment equipment and is handled；
Quartzy cover outer wall long 20cm, wide 20cm, high 20cm, the wall thickness 5mm, be mounted at the air inlet in upper cover body and with
Cavity connection, as a reaction chamber；
The corrosion-resistant air hose is connected with cavity lower end surface and is connected to cavity；
The present invention has found according to making herbs into wool principle, as long as increasing the nucleation point of silicon chip surface, can grow flannelette well, so,
We only need to go out some small defect/pits in silicon chip surface plasma etching；Meanwhile plasma generates
Flannelette it is more uniform；
Copper coil is excited by radio-frequency power supply, generates electromagnetic oscillation, etching gas is passed through quartz reaction chamber by tracheae, mixes
It is afterwards plasma by radio-frequency power supply excitation, silicon chip surface is performed etching when silicon wafer passes through from below, is stayed in silicon chip surface
Lower uniform tiny defect, these defects, which carry on the back to continue to corrode in texturing slot, is enlarged into suede structure, so that later period making herbs into wool effect
It is good, it is possible to reduce or substitution flocking additive, making herbs into wool cost and cost for wastewater treatment are reduced, cell piece transfer efficiency is improved.
The above is only preferred implementation method of the invention, it is noted that for the ordinary skill people of the art
It for member, without departing from the principle of the present invention, can also make several improvements, these improvement also should be regarded as of the invention
Protection scope.
Claims (6)
1. a kind of silicon wafer cut by diamond wire pre-processing device, it is characterised in that: occur including cavity, one or more groups of plasmas
Device, conveyer system and exhaust emission system；
Symmetrical opening is provided at left and right sides of the cavity；
The plasma generator includes radio-frequency power supply, copper coil and quartz cover, and the copper coil is wrapped in quartz cover
Outer wall on, and one is connected with the positive grade of radio-frequency power supply, and the negative grade that other end is connected with the positive grade of radio-frequency power supply is connected；
The conveyer system includes driving motor, the gear with speed changer, chain, main drive roller, auxiliary driving roller and biography
Mesh belt is sent, the motor is connected with gear, and the gear is connected by chain with main drive roller, main drive roller and auxiliary driving
Transmission net band is connected between roller；The transmission shaft driven gear of the motor rotates so that chain-driving main drive roller rotates,
Make that transmission net band is driven to drive the rotation of auxiliary driving roller simultaneously；
The exhaust emission system includes corrosion-resistant air hose and the air pump that is connected with corrosion-resistant air hose；
The plasma generator is mounted on the upper surface of upper cavity and is connected to cavity, the exhaust emission system with
Cavity lower end surface is connected and is connected to cavity；The conveyer system passes through the opening at left and right sides of cavity and extends to two sides.
2. silicon wafer cut by diamond wire pre-processing device according to claim 1, it is characterised in that: the quartz cover and chamber
Body connection.
3. silicon wafer cut by diamond wire pre-processing device according to claim 1, it is characterised in that: the corrosion-resistant air hose
It is connected with cavity lower end surface and is connected to cavity.
4. silicon wafer cut by diamond wire pre-processing device according to claim 1, it is characterised in that: connect on the quartz cover
It is connected to etching gas inlet tube.
5. silicon wafer cut by diamond wire pre-processing device according to claim 1, it is characterised in that: the quartzy cover outer wall
Long 20cm, wide 20cm, high 20cm, wall thickness 5mm.
6. silicon wafer cut by diamond wire pre-processing device according to claim 1, it is characterised in that: the copper coil it is straight
Diameter is 5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811608021.6A CN109585608A (en) | 2018-12-27 | 2018-12-27 | A kind of silicon wafer cut by diamond wire pre-processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811608021.6A CN109585608A (en) | 2018-12-27 | 2018-12-27 | A kind of silicon wafer cut by diamond wire pre-processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109585608A true CN109585608A (en) | 2019-04-05 |
Family
ID=65932974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811608021.6A Pending CN109585608A (en) | 2018-12-27 | 2018-12-27 | A kind of silicon wafer cut by diamond wire pre-processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109585608A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204216005U (en) * | 2014-11-27 | 2015-03-18 | 苏州阿特斯阳光电力科技有限公司 | A kind of plasma etch apparatus |
| CN204441314U (en) * | 2015-03-20 | 2015-07-01 | 江苏盎华光伏工程技术研究中心有限公司 | For the plasma fluff making device of silicon chip |
| CN104752565A (en) * | 2015-04-09 | 2015-07-01 | 江苏盎华光伏工程技术研究中心有限公司 | Multistage sweeping type silicon slice texturing and processing device and control method thereof |
| CN108133905A (en) * | 2017-12-20 | 2018-06-08 | 北京铂阳顶荣光伏科技有限公司 | A kind of system and method for CIGS thin film pretreatment |
| CN209298149U (en) * | 2018-12-27 | 2019-08-23 | 无锡赛晶太阳能有限公司 | A kind of silicon wafer cut by diamond wire pre-processing device |
-
2018
- 2018-12-27 CN CN201811608021.6A patent/CN109585608A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204216005U (en) * | 2014-11-27 | 2015-03-18 | 苏州阿特斯阳光电力科技有限公司 | A kind of plasma etch apparatus |
| CN204441314U (en) * | 2015-03-20 | 2015-07-01 | 江苏盎华光伏工程技术研究中心有限公司 | For the plasma fluff making device of silicon chip |
| CN104752565A (en) * | 2015-04-09 | 2015-07-01 | 江苏盎华光伏工程技术研究中心有限公司 | Multistage sweeping type silicon slice texturing and processing device and control method thereof |
| CN108133905A (en) * | 2017-12-20 | 2018-06-08 | 北京铂阳顶荣光伏科技有限公司 | A kind of system and method for CIGS thin film pretreatment |
| CN209298149U (en) * | 2018-12-27 | 2019-08-23 | 无锡赛晶太阳能有限公司 | A kind of silicon wafer cut by diamond wire pre-processing device |
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Application publication date: 20190405 |