CN109585517A - A kind of equipment and its production technology being used to prepare transparent display screen grid - Google Patents
A kind of equipment and its production technology being used to prepare transparent display screen grid Download PDFInfo
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- CN109585517A CN109585517A CN201811525486.5A CN201811525486A CN109585517A CN 109585517 A CN109585517 A CN 109585517A CN 201811525486 A CN201811525486 A CN 201811525486A CN 109585517 A CN109585517 A CN 109585517A
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- film
- chamber
- substrate
- display screen
- transparent display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
Abstract
The present invention relates to a kind of equipment and its production technology for being used to prepare transparent display screen grid, which includes pre-treatment mechanism, several film-coating mechanisms, transport mechanism and other function mechanism, and the pre-treatment mechanism includes surface pretreatment chamber；The film-coating mechanism includes that Si film preparation chamber, Au film preparation chamber and Si base grid prepare chamber, and the Si film preparation chamber is provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask positioning system；The Au film preparation chamber is provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask positioning system；The Si base grid prepares chamber and is provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system, exposure mask positioning system and heating system.The present invention is by being arranged multiple mutually independent cavitys, in substrate surface deposition film, each operation can operation repetitive, reduce the production time of one-piece substrate film, improve the utilization rate of equipment and the production efficiency of transparent display screen grid.
Description
Technical field
The invention belongs to display screen grid preparation technical field, and in particular to a kind of transparent display screen grid that is used to prepare
Equipment and its production technology.
Background technique
Transparent display screen is the important trend of the following display application, and the light transmittance of transparent display screen is high, brightness is high, can not only
It enough allows the light after screen to penetrate, while bright-coloured beautiful image effect can be showed on the screen, user is allowed to experience layer
The secondary abundant, stereopsis in conjunction with outdoor scene, with splendid visual experience and the following sense.Transparent display screen (will have with OLED
Machine light emitting diode) material production rgb pixel, it needs to make grid first before usually making these equally distributed pixels, use
The Multi-level display material layer for forming pixel is isolated in grid.The method of conventional production grid matrix is multiple by litho machine
Gluing, exposure, cleaning operation can just produce step-like grid, need expensive litho machine and complicated production process, significantly
Increase cost of manufacture and time.Therefore, a kind of preparation flow that can simplify display screen grid is developed, production cost is reduced,
Improve the transparent display screen grid of equipment efficiency of usage and production efficiency be used to prepare equipment with important economy, society and
Realistic meaning.
Summary of the invention
The object of the invention is that solve the above-mentioned problems and to provide a kind of structure simple, design is reasonably for making
The equipment and its production technology of standby transparent display screen grid.
The present invention through the following technical solutions to achieve the above objectives:
A kind of equipment being used to prepare transparent display screen grid, including pre-treatment mechanism, several film-coating mechanisms, transport mechanism
With other function mechanism, the pre-treatment mechanism includes surface pretreatment chamber, be internally provided with vacuum system, air supply system,
Thermal evaporation system, magnetic control sputtering system, exposure mask positioning system；
The film-coating mechanism includes that Si film preparation chamber, Au film preparation chamber and Si base grid prepare chamber, the Si film preparation chamber
Inside it is provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask positioning system；
The Au film preparation is intracavitary to be provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask
Positioning system；
The Si base grid prepare it is intracavitary be provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system,
Exposure mask positioning system and heating system.
By using above-mentioned technical proposal, Si and Au film gradually can be deposited to substrate surface, and finally grow column
Grid, and it is divided into multiple cavities, to facilitate different preparation steps to be unfolded in parallel, shorten the monolithic production time, improves equipment utilization
Efficiency and production efficiency.
As a further optimization solution of the present invention, the other function mechanism includes several functional chambers, in each functional chamber
It is provided with one of vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask positioning system or a variety of.
By using above-mentioned technical proposal, RGB light emitting functional layer can be grown in substrate surface.
As a further optimization solution of the present invention, between each mechanism by share chamber be interconnected, each mechanism with
The junction for sharing chamber is provided with several corresponding flanges and valve.
By using above-mentioned technical proposal, each cavity both can also pass through conveyer independently using not interfereing with each other
Structure and control system carry out collaboration use.
As a further optimization solution of the present invention, the substrate includes the transparent materials such as glass and is prepared for function in advance
The transparent material of film layer.
A kind of production technology being used to prepare transparent display screen grid equipment, comprising the following steps:
S1: the surface preparation of substrate
Substrate material is placed in transport mechanism, each mechanism is started by controller, substrate is sent to surface pretreatment
Chamber cleans substrate surface by plasma cleaning mode；
S2: preparation Si film layer
Pretreated substrate is delivered to Si film preparation chamber, the Si particle deposition that Si base target material surface generates by transport mechanism
To the exposure mask hollow part of substrate, Si film is grown；
S3: preparation Au film layer
The substrate for being deposited with Si film is delivered to Au film preparation chamber by transport mechanism, the Au particle that Au base target material surface is generated
The exposure mask hollow part of substrate is deposited to, Si/Au film is formed；
S4: preparation Si base grid
The substrate that surface is deposited with Si/Au film is delivered to Si base grid and prepares chamber by transport mechanism, passes through heating system
Substrate is heated, the gas containing Si is passed through and is reacted, column grid is finally grown at Si/Au film.
As a further optimization solution of the present invention, in the step S2 Si film preparation mode be by magnetron sputtering,
Electron beam evaporation or laser pulse evaporation, the Si film grown with a thickness of 2~10nm, equivalent diameter be 10nm~
2000nm。
As a further optimization solution of the present invention, Au film preparation mode is magnetron sputtering, electronics in the step S3
Beam evaporation or laser pulse evaporation, the Au film grown with a thickness of 1~8nm, equivalent diameter is 10nm~2000nm.
As a further optimization solution of the present invention, temperature after heating is heated in the step S4 be maintained at 365~600
DEG C, the flow velocity of the gas containing Si is 1sccm~1000sccm, and the diameter of the Si base grid grown is 10~500nm,
Height is 200~5000nm.
The beneficial effects of the present invention are:
1) present invention is by being arranged multiple mutually independent cavitys, and in substrate surface deposition film, multiple operations can be parallel
Operation reduces the production time of one-piece substrate film, improves the utilization rate of equipment and the production efficiency of transparent display screen grid；
2) present invention by utilize gas-phase catalysis, substrate surface formation be uniformly distributed, the grid that size adjustable is whole, can
Improve the resolution ratio of transparent display screen；
3) the configuration of the present invention is simple, stability is high, and design rationally, is easy to implement.
Detailed description of the invention
Fig. 1 is overall structure diagram of the invention；
Fig. 2 is surface pretreatment flow chart of the invention；
Fig. 3 is Si film preparation flow chart of the invention；
Fig. 4 is Si/Au film preparation flow chart of the invention；
Fig. 5 is Si base grid preparation flow figure of the invention.
In figure: 1, surface pretreatment chamber；2, Si film preparation chamber；3, Au film preparation chamber；4, Si base grid prepares chamber；5, other
Cavity；6, flange；7, chamber is shared；8, transport mechanism；11, substrate；12, plasma cleaning liquid；21, Si film；22, Si gas grain
Son；31, Si/Au film；32, Au gas particle；41, Si base grid.
Specific embodiment
The application is described in further detail with reference to the accompanying drawing, it is necessary to it is indicated herein to be, implement in detail below
Mode is served only for that the application is further detailed, and should not be understood as the limitation to the application protection scope, the field
Technical staff can make some nonessential modifications and adaptations to the application according to above-mentioned application content.
Embodiment 1
As shown in Figs. 1-5, a kind of equipment being used to prepare transparent display screen grid, including pre-treatment mechanism, several plated films
Mechanism, transport mechanism 8 and other function mechanism, the pre-treatment mechanism includes surface pretreatment chamber 1, is internally provided with vacuum
System, air supply system, thermal evaporation system, magnetic control sputtering system, exposure mask positioning system are filled by the control being set in the equipment
Control starting pre-treatment each system within the organization is set, using plasma cleaning mode to being arranged in inside surface pretreatment chamber 1
11 material of substrate carries out surface cleaning operation, so that 11 material of substrate enters next operational sequence.
The film-coating mechanism includes that Si film preparation chamber 2, Au film preparation chamber 3 and Si base grid prepare chamber 4, the Si film preparation
Vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask positioning system are provided in chamber 2, by controller control
System starts each system, and 11 surface of substrate after surface treatment plates one layer of Si film.
Vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system are provided in the Au film preparation chamber 3 and are covered
Film positioning system starts each system by controller control, it is thin to plate layer of Au again on 11 surface of substrate that surface is coated with Si film
Film.
The Si base grid prepare be provided in chamber 4 vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system,
Exposure mask positioning system and heating system start each system by controller control, column grid are grown at Si/Au film 31.
The other function mechanism includes several functional chambers, and vacuum system, air supply system, heat are provided in each functional chamber and is steamed
One of hair system, magnetic control sputtering system and exposure mask positioning system are a variety of, and the other function mechanism is in substrate
11 surfaces grow RGB light emitting functional layer.
It should be noted that be interconnected between each mechanism by sharing chamber 7, the connection of each mechanism and shared chamber 7
Place is provided with several corresponding flanges 6 and valve, and for controlling connection and the closed state between each mechanism, each cavity both may be used
It is not interfere with each other with independent use, collaboration use can also be carried out by transport mechanism 8 and control system；The transport mechanism 8 is arranged
In the center of each mechanism, substrate 11 can be transmitted between each mechanism；The transparent materials such as including glass of substrate 11,
It can be the transparent material for being prepared for function film layer in advance.
A kind of production technology preparing transparent display screen grid, comprising the following steps:
S1: the surface preparation of substrate 11
11 material of substrate is placed in transport mechanism 8, each mechanism is started by controller, before substrate 11 is sent to surface
Processing chamber 1 cleans 11 surface of substrate by plasma cleaning mode；
S2: preparation Si film layer
Pretreated substrate 11 is delivered to Si film preparation chamber 2 by transport mechanism 8, by magnetron sputtering, electron beam evaporation,
The Si particle deposition that the modes such as laser pulse evaporation generate Si base target material surface is grown to the exposure mask hollow part of substrate 11
For Si film 21 with a thickness of 2~10nm, equivalent diameter is 10nm~2000nm；
S3: preparation Au film layer
The substrate 11 for being deposited with Si film 21 is delivered to Au film preparation chamber 3 by transport mechanism 8, passes through magnetron sputtering, electron beam
The Au particle deposition that evaporation or laser pulse evaporation mode generate Au base target material surface is formed to the exposure mask hollow part of substrate 11
Si/Au film 31 with a thickness of 1~8nm, equivalent diameter is 10nm~2000nm；
S4: preparation Si base grid 41
The substrate 11 that surface is deposited with Si/Au film 31 is delivered to Si base grid and prepares chamber 4 by transport mechanism 8, by adding
Hot systems heat substrate 11, and temperature is maintained at 365~600 DEG C, and being passed through flow velocity is 1sccm~1000sccm containing Si's
Gas is reacted, and finally growth diameter is highly the column lattice of 200~5000nm in 10~500nm at Si/Au film 31
Grid.
In addition, above-mentioned steps can also grow RGB light emitting functional layer on 11 surface of substrate by other function mechanism after implementing.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.
Claims (8)
1. a kind of equipment for being used to prepare transparent display screen grid, it is characterised in that: including pre-treatment mechanism, several coating machines
Structure, transport mechanism (8) and other function mechanism, the pre-treatment mechanism include surface pretreatment chamber (1), the pre-treatment chamber
(1) be internally provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system, exposure mask positioning system；
The film-coating mechanism includes that Si film preparation chamber (2), Au film preparation chamber (3) and Si base grid are prepared chamber (4), the Si film system
Vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask positioning system are provided in standby chamber (2)；
Vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system and exposure mask are provided in the Au film preparation chamber (3)
Positioning system；
Prepared by the Si base grid is provided with vacuum system, air supply system, thermal evaporation system, magnetic control sputtering system, covers in chamber (4)
Film positioning system and heating system.
2. a kind of equipment for being used to prepare transparent display screen grid according to claim 1, it is characterised in that: it is described other
Functional entity includes several functional chambers, and vacuum system, air supply system, thermal evaporation system, magnetron sputtering are provided in each functional chamber
One of system and exposure mask positioning system are a variety of.
3. a kind of equipment for being used to prepare transparent display screen grid according to claim 1, it is characterised in that: each machine
It is interconnected between structure by sharing chamber (7), each mechanism is provided with several corresponding flanges (6) with the junction of shared chamber (7)
And valve.
4. a kind of equipment for being used to prepare transparent display screen grid according to claim 1, it is characterised in that: the substrate
(11) include the transparent materials such as glass and be prepared for the transparent material of function film layer in advance.
5. a kind of production technology for being used to prepare transparent display screen grid equipment, which comprises the following steps:
S1: the surface preparation of substrate (11)
Substrate (11) material is placed on transport mechanism (8), each mechanism is started by controller, substrate (11) is sent to surface
Pre-treatment chamber (1) cleans substrate (11) surface by plasma cleaning mode；
S2: preparation Si film (21) layer
Pretreated substrate (11) is delivered to Si film preparation chamber (2), the Si grain that Si base target material surface generates by transport mechanism (8)
Son deposits to the exposure mask hollow part of substrate (11), grows Si film；
S3: preparation Au film layer
The substrate (11) for being deposited with Si film (21) is delivered to Au film preparation chamber (3) by transport mechanism (8), and Au base target material surface is produced
Raw Au particle deposition is formed Si/Au film (31) to the exposure mask hollow part of substrate (11)；
S4: preparation Si base grid (41)
The substrate (11) that surface is deposited with Si/Au film (31) is delivered to Si base grid and prepares chamber (4) by transport mechanism (8), is led to
It crosses heating system to heat substrate (11), is passed through the gas containing Si and is reacted, finally grown at Si/Au film (31)
Column grid out.
6. a kind of production technology for being used to prepare transparent display screen grid equipment according to claim 5, it is characterised in that:
Si film preparation mode is to be evaporated by magnetron sputtering, electron beam evaporation or laser pulse in the step S2, the institute grown
State Si film with a thickness of 2~10nm, equivalent diameter is 10nm~2000nm.
7. a kind of production technology for being used to prepare transparent display screen grid equipment according to claim 5, it is characterised in that:
Au film preparation mode is magnetron sputtering, electron beam evaporation or laser pulse evaporation, the Au grown in the step S3
Film with a thickness of 1~8nm, equivalent diameter is 10nm~2000nm.
8. a kind of production technology for being used to prepare transparent display screen grid equipment according to claim 5, it is characterised in that:
Temperature after heating is maintained at 365~600 in the step S4, and the flow velocity of the gas containing Si described in DEG C is 1sccm~1000sccm, raw
The diameter of the Si base grid (41) grown is 10~500nm, is highly 200~5000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811525486.5A CN109585517A (en) | 2018-12-13 | 2018-12-13 | A kind of equipment and its production technology being used to prepare transparent display screen grid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811525486.5A CN109585517A (en) | 2018-12-13 | 2018-12-13 | A kind of equipment and its production technology being used to prepare transparent display screen grid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109585517A true CN109585517A (en) | 2019-04-05 |
Family
ID=65928466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811525486.5A Pending CN109585517A (en) | 2018-12-13 | 2018-12-13 | A kind of equipment and its production technology being used to prepare transparent display screen grid |
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| CN1900359A (en) * | 2005-07-19 | 2007-01-24 | 应用材料股份有限公司 | Hybrid PVD-CVD system |
| CN101273444A (en) * | 2005-09-27 | 2008-09-24 | 阿德文泰克全球有限公司 | Method and apparatus for electronic device manufacture using shadow masks |
| CN102414844A (en) * | 2009-04-28 | 2012-04-11 | 应用材料公司 | Cluster tool for LEDs |
| CN102629671A (en) * | 2012-04-25 | 2012-08-08 | 上海大学 | Preparation method of organic electroluminescent device of silicon base micro display |
| CN104120389A (en) * | 2014-08-04 | 2014-10-29 | 上海和辉光电有限公司 | Film plating equipment |
-
2018
- 2018-12-13 CN CN201811525486.5A patent/CN109585517A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1900359A (en) * | 2005-07-19 | 2007-01-24 | 应用材料股份有限公司 | Hybrid PVD-CVD system |
| CN101273444A (en) * | 2005-09-27 | 2008-09-24 | 阿德文泰克全球有限公司 | Method and apparatus for electronic device manufacture using shadow masks |
| CN102414844A (en) * | 2009-04-28 | 2012-04-11 | 应用材料公司 | Cluster tool for LEDs |
| CN102629671A (en) * | 2012-04-25 | 2012-08-08 | 上海大学 | Preparation method of organic electroluminescent device of silicon base micro display |
| CN104120389A (en) * | 2014-08-04 | 2014-10-29 | 上海和辉光电有限公司 | Film plating equipment |
Non-Patent Citations (3)
| Title |
|---|
| 于军胜等: "《OLED显示基础及产业化》", 2 March 2015, 电子科技大学出版社 * |
| 于军胜等: "《显示器件技术（第2版）》", 30 July 2014, 国防工业出版社 * |
| 杨荣斌等: "《信息技术新兴领域趋势》", 1 November 2018, 上海科技文献出版社 * |
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Application publication date: 20190405 |
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