CN109585494A - Oganic light-emitting display device - Google Patents
Oganic light-emitting display device Download PDFInfo
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- CN109585494A CN109585494A CN201810980735.3A CN201810980735A CN109585494A CN 109585494 A CN109585494 A CN 109585494A CN 201810980735 A CN201810980735 A CN 201810980735A CN 109585494 A CN109585494 A CN 109585494A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Disclose a kind of oganic light-emitting display device.Oganic light-emitting display device includes: the substrate including display area and bending region；Pel array layer, pel array layer include the driving wiring in display area and the thin film transistor (TFT) for being connected to driving wiring；Cover the planarization layer of pel array layer；It is arranged on planarization layer and is connected to the light emitting device layer of thin film transistor (TFT)；It is arranged in bending region and is connected to the wiring of driving wiring；Wiring contacts portion, wiring contacts portion include the contact hole that wiring will be driven to be electrically connected to wiring；With the encapsulated layer of covering light emitting device layer and wiring contacts portion.Therefore, oganic light-emitting display device is easy bending, and effective protection luminescent device, to make it from the infiltration of outside moisture.
Description
Technical field
The present invention relates to a kind of oganic light-emitting display devices.
Background technique
With the development of information guiding society, for showing that the various demands of display equipment of image gradually increase.It is organic
Light-emitting display apparatus (self-emitting display device) has wide viewing angle, outstanding contrast and quick response time, thus conduct
Next generation's display equipment is just causing more to pay close attention to.Recently, more slim oganic light-emitting display device is being issued.Flexible organic hair
Light shows that equipment is easy to carry about with one and can be applied to various image displays.
Flexible oganic light-emitting display device includes the bending region that substrate can be made to fold.Since substrate is in bending region
Middle folding so frame size reduces, thus can realize the oganic light-emitting display device with narrow frame.
However, as the degree bent to realize narrower frame increases, in the wiring being set in bending region
It is middle to rupture, lead to short circuit.
Summary of the invention
Therefore, the present invention is intended to provide it is a kind of substantially overcome limitation and disadvantage due to the relevant technologies caused by
The oganic light-emitting display device of one or more problems.
One aspect of the present invention is intended to provide a kind of oganic light-emitting display device, minimizes or prevents in wiring part
Thus the rupture at place protects luminescent device to be readily able to bend, to make it from the infiltration of outside moisture or moisture.
Other advantages and features of the invention, a part of these advantages and features will be partially listed in the following description
One skilled in the art will become obvious when studying the following contents or can practice through the invention
It understands.Object of the present invention and other advantages can be by specifically noting in specification and its claims and attached drawing
Structure be achieved and obtained.
In order to achieve these and other advantages and purpose according to the present invention is mentioned as embodied and be broadly described herein
A kind of oganic light-emitting display device is supplied, comprising: the substrate including display area and bending region；Pel array layer, the picture
Pixel array layer includes the driving wiring in the display area and the thin film transistor (TFT) for being connected to the driving wiring；Covering
The planarization layer of the pel array layer；It is arranged on the planarization layer and is connected to the photophore of the thin film transistor (TFT)
Part layer；It is arranged in the bending region and is connected to the wiring of the driving wiring；Wiring contacts portion, the wiring contacts
Portion includes the contact hole that the driving wiring is electrically connected to the wiring；It is connect with the covering light emitting device layer and the wiring
The encapsulated layer of contact portion.
It should be appreciated that present invention front being broadly described and following detailed description be all it is illustrative and explanatory,
It is intended to provide further explanation to claimed invention.
Detailed description of the invention
It is further understood to present invention offer and the attached drawing for being incorporated herein composition the application a part illustrates this hair
Bright embodiment, and be used to explain the principle of the present invention together with specification.In the accompanying drawings:
Fig. 1 is the plan view for illustrating oganic light-emitting display device according to an embodiment of the present invention；
Fig. 2 is the sectional view of the line I-I ' along Fig. 1, and it is aobvious which illustrates the organic light emissions of first embodiment according to the present invention
Show equipment；
Fig. 3 is the sectional view of the line I-I ' along Fig. 1, and it is aobvious which illustrates the organic light emissions of second embodiment according to the present invention
Show equipment；
Fig. 4 is putting for the structure in the bending region in the oganic light-emitting display device illustrated according to an embodiment of the present invention
Big figure.
Specific embodiment
It is described now with detailed reference to exemplary embodiments of the present invention, these embodiments is illustrated in attached drawing
Some examples.Identical reference marker will be used throughout the drawings as much as possible indicates the same or similar part.
The following implementation described by referring to accompanying drawing is illustrated into advantages and features of the invention and its implementation.
However, the present invention can be implemented in different forms, embodiment listed here should not be construed as limited by.And it is to provide this
A little embodiments are and the scope of the present invention fully to be passed to fields skill to keep present disclosure full and complete
Art personnel.In addition, the present invention is only limited by the range of claims.
In order to describe embodiments of the present invention and disclosed shape, size, ratio, angle and quantity is only in the accompanying drawings
It is example, thus the details that the present invention is not limited to show.Similar appended drawing reference refers to similar element.It is retouched in following
In stating, when determining can unnecessarily make emphasis of the invention smudgy the detailed description of related known function or construction,
The detailed description will be omitted.
In this application using " comprising ", " having " and in the case that "comprising" is described, other parts can be added, are removed
It is non-to have used " only ".
When explaining an element, although not clearly stating, which be should be interpreted that comprising error range.
When describing positional relationship, for example, the positional relationship between two parts be described as " ... on ",
" in ... top ", " in ... lower section " and " ... later " when, can be arranged between these two portions it is one or more other
Part, unless having used " just " or " direct ".
When describing time relationship, for example, when time sequencing is described as " ... after ", " subsequent ", " following "
" ... before " when, it may include discontinuous situation, unless having used " just " or " direct ".
It will be appreciated that these elements are not although term " first ", " second " etc. can be used herein to describe various elements
It should be limited by these terms.These terms are intended merely to distinguish an element and another element.For example, without departing substantially from this hair
In the case where bright range, the first element may be referred to as the second element, and similarly, the second element may be referred to as first and want
Element.
" first level axis direction ", " the second horizontal axis " and " vertical axis " should not be interpreted only as between relationship
For the geometrical relationship of exact vertical, it can indicate that there is broader side in the range of element of the invention functionally works
Tropism.
Term "at least one" should be understood as including any and all group of one or more of related listed item
It closes.For example, the meaning of " at least one of first item, second item and third item " indicates to be selected from first item, second
The combination and first item of all items of two or more projects in project and third item, second item or third
Project.
One of ordinary skill in the art can be fully understood that, the feature of each embodiment of the present invention can a part or whole part each other
Ground combines or combination, and can technically carry out various interoperability and driving each other.Embodiments of the present invention can be independent of one another
Implement, or with complementary relationship common implementing.
Hereinafter, it will be described in detail with reference to the accompanying drawings the exemplary embodiment party of oganic light-emitting display device according to the present invention
Formula.In this application, when adding reference marker to the element in each figure, it should be noted that used as far as possible for element
It has been used to indicate the Similar reference characters of similar elements in other figures.
Fig. 1 is the plan view for illustrating oganic light-emitting display device according to an embodiment of the present invention.
Referring to Fig.1, oganic light-emitting display device according to an embodiment of the present invention may include substrate 100, driver 300
With circuit board 400.
For thin film transistor (TFT) (TFT) array substrate, substrate 100 can be formed by glass, plastics, semiconductor etc..Root
Substrate 100 according to an embodiment may include display area AA and non-display area IA.
Display area AA may be provided in the part in addition to edge of substrate 100 (for example, not being arranged along outer edge).
Display area AA may be defined as the region of display image.
Non-display area IA may be provided in the other parts in addition to the display area AA being set on substrate 100 and
It may be defined as the edge of the substrate 100 around display area AA.Non-display area IA can be the periphery outside the AA of display area
Region, different from display area AA, non-display area IA can not show image.In addition, non-display area IA may include being connected to
Bending region (bending area) BA of driver 300.
Bending region BA, which can be the region being arranged in non-display area IA and can be, is provided with wiring part
Driver 300 is connected to display area AA by region, wiring part.Bending region BA can be in order to by non-display area IA's
A part folds in one direction and is arranged and the frame region of oganic light-emitting display device according to the present invention is subtracted
Small region.
Driver 300 can be connected to the welding disk being arranged in the non-display area IA of substrate 100, be used in display area
Image corresponding with the video data provided from display driving system is shown on AA.Driver 300 according to an embodiment can
Including driving circuit 310 and there can be chip on film (COF) structure.For example, driver 300 may include flexible membrane, setting exist
Drive integrated circult (IC) on flexible membrane and the multiple drive terminals being arranged in an edge of flexible membrane.
Circuit board 400 may be electrically connected to driver 300.Circuit board 400 according to an embodiment can be in driver 300
Signal and electric power are transmitted between element.Circuit board 400 can be with printed circuit board flexible (PCB).
Fig. 2 is the sectional view intercepted along the line I-I ' of Fig. 1, and which illustrates organic hairs of first embodiment according to the present invention
Light shows equipment.
Referring to Fig. 2, oganic light-emitting display device according to the present embodiment may include substrate 100, buffer layer 110, pixel
Array layer, planarization layer 150, light emitting device layer 160, multiple dyke 170A and 170B, multiple spacers (spacer) 180A and
180B, encapsulated layer 190, wiring 161B, coat (coating layer) 200 and contact hole CH.
Substrate 100 (tft array substrate) can be formed by glass, plastics, semiconductor etc..Substrate according to an embodiment
100 may include display area AA and non-display area IA.
Buffer layer 110 may be provided in the display area AA of substrate 100.Buffer layer 110 according to an embodiment prevents
Moisture or moisture infiltration are into pel array layer.Buffer layer 110 can be formed by inorganic insulating material, for example, can be by silica
(SiO2), silicon nitride (SiNx) or its multilayer formed, but not limited to this.
Pel array layer may be provided on buffer layer 110.Pel array layer may include thin film transistor (TFT) T, driving wiring 133
With interlayer insulating film 140.
Thin film transistor (TFT) T may be provided on buffer layer 110.Thin film transistor (TFT) T according to an embodiment is controllable from drive
Dynamic device 300 flows to the amount of the electric current of light emitting device layer 160.Thin film transistor (TFT) T may include semiconductor layer 111, gate electrode 121,
Source electrode 131 and drain electrode 132.
Semiconductor layer 111 may be provided on buffer layer 110.Semiconductor layer 111 may include semiconductor material, semiconductor material
Including one of amorphous silicon, polysilicon, oxide material and organic material, but not limited to this.
Gate electrode 121 can be formed together on semi-conductive insulating layer 120 with grid line.Gate electrode 121 can be by grid
Insulating layer 130 covers.
Source electrode 131 may be provided on the side of gate insulating layer 130 with overlapping with the side of semiconductor layer 111.Source
Pole electrode 131 can be formed together with data line and driving power supply line.
Drain electrode 132 may be provided on the other side of gate insulating layer 130 with another top-cross with semiconductor layer 111
It is folded, and drain electrode 132 can be separated with source electrode 131.Drain electrode 132 can be formed together simultaneously with source electrode 131
And it can be from adjacent driving power supply line (or data line) branch or protrusion.
Driving wiring 133 may include the grid line and data line intersected with each other to limit pixel.In addition, driving wiring 133
It can further comprise the driving power supply line being disposed adjacent with data line.
Grid line may be provided on semi-conductive insulating layer 120, be set on the same layer with gate electrode 121.That is
Semi-conductive insulating layer 120 may be provided between substrate 100 and grid line.
As shown in Figure 2, data line or driving power supply line may be provided at and the source electrode 131 on gate insulating layer 130
On the identical layer of drain electrode 132.That is gate insulating layer 130 may be provided between grid line and data line.
Grid line according to an embodiment can be formed by material identical with gate electrode 121, and data line and drive
Dynamic power supply line can be formed by material identical with each of source electrode 131 and drain electrode 132.Therefore, wiring 133 is driven
It can be by being formed with one of gate electrode 121, source electrode 131 and drain electrode 132 identical material.
Interlayer insulating film 140 may be provided on source electrode 131, drain electrode 132 and driving wiring 133.Layer insulation
Layer 140 thin film transistor (TFT) T can be isolated from the outside and can protective film transistor T to make it from the chemistry in manufacturing process
Material, moisture and gas.Interlayer insulating film 140 can be formed by the weaker inorganic material of conductive characteristic and flexible characteristic, Huo Zheke
It is formed by the inorganic material comprising silicon (Si).According to an embodiment, can be arranged in interlayer insulating film 140 will drive wiring
133 are electrically connected to the contact hole CH of wiring 161B.Its detailed construction is described below.
Planarization layer 150 is settable on the substrate 100 to cover pel array layer.150 protective film crystal of planarization layer
Pipe T simultaneously provides flat surfaces on thin film transistor (TFT) T.Planarization layer 150 according to an embodiment can be by such as benzocyclobutane
The organic material of alkene or optics acryl (photo acryl) etc is formed, but in order to which technique is convenient, and planarization layer 150 can be by
Optics acryl material is formed.
Planarization layer 150 according to an embodiment can be set to contact substrate 100 in bending region BA.That is
Planarization layer 150 may be provided in the whole region of substrate 100.Since buffer layer 110 and insulating layer 120,130 and 140 are not set
It sets in the bending region BA of substrate 100, so planarization layer 150 can be set to directly contact substrate 100.Work as planarization layer
150 by organic insulating material when being formed, planarization layer 150 can have the property that by act in bending technique stress,
Damaged condition caused by power or other external force is small and flexible height.Therefore, because planarization layer 150 is arranged in the curved of substrate 100
Substrate 100 is contacted in the BA of folding area domain, so the bending technique of oganic light-emitting display device can be easier and safely be executed.
Light emitting device layer 160 may be provided on planarization layer 150.Light emitting device layer 160 according to an embodiment can wrap
Include first electrode 161A, luminescent layer 162 and second electrode 163.
It is arranged on planarization layer 150 to first electrode 161A (anode) patternable.According to an embodiment first
Electrode 161A can be electrically connected to by the contact hole being arranged in planarization layer 150 source electrode 131 of thin film transistor (TFT) T and
It can receive the data current exported from thin film transistor (TFT) T.First electrode 161A can be formed by metal material with high reflectivity,
Such as, it may include the material of such as golden (Au), silver-colored (Ag), aluminium (Al), molybdenum (Mo) or magnesium (Mg) etc may include its alloy,
But not limited to this.
Luminescent layer 162 may be provided at the first electrode in the open area (or light emitting region) limited by the first dyke 170A
On 161A.Luminescent layer 162 according to an embodiment may include hole injection layer, the sky that sequence is stacked on first electrode 161A
Cave transport layer, organic luminous layer, electron transfer layer and electron injecting layer.Here, can omit hole injection layer, hole transmission layer,
One or more of electron transfer layer and electron injecting layer.At this point, luminescent layer 162 can further comprise being injected into for controlling
At least one functional layer of electronics and/or hole in organic luminous layer.
Second electrode 163 is settable on the substrate 100 to cover luminescent layer 162 and the first dyke 170A and can be jointly
All or some luminescent layer 162 being connected to above the whole surface for being formed in substrate 100.Based on what is flowed in luminescent layer 162
Sense of current, second electrode 163 may be defined as cathode or public electrode.Second electrode 163 can receive to be provided from driver 300
Cathode power.Here, Cathode power can be ground voltage or direct current (DC) voltage with constant voltage level.
Second electrode 163 according to an embodiment can be formed by the transparent metal material with high light transmissivity.Example
Such as, second electrode 163 may include the transparent conductive material of such as transparent conductive oxide (TCO) etc: tin indium oxide (ITO),
Indium zinc oxide (IZO), indium oxide zinc-tin (IZTO), indium oxide caesium (ICO) or indium oxide tungsten (IWO).Optionally, in this implementation
In mode, in order in the technique for forming second electrode 163 by due to technological temperature caused by luminescent layer 162 damage it is minimum
Change, can be formed by using the low-temperature metal depositing operation of the technological temperature less than 100 degrees Celsius by non-crystal transparent conductive material
Second electrode 163.That is existing in the situation that second electrode 163 is formed by crystalline transparent conductive material in order to ensure low
Resistance value and to second electrode 163 execute high-temperature heat treatment process damage luminescent layer 162 the problem of.It is preferred, therefore, that can lead to
It crosses low temperature metal deposition process and second electrode 163 is formed by non-crystal transparent conductive material.
First dyke 170A may be provided on planarization layer 150 edge and thin film transistor (TFT) for covering first electrode 161A
T and open area can be limited.The first dyke 170A according to an embodiment may include such as benzocyclobutene, acryl or
The organic material of polyimides etc.In addition, the first dyke 170A can be formed by the photosensitizer comprising black pigment, in this feelings
In shape, the first dyke 170A may act as light obstructing member (or black matrix).
First spacer 180A may be provided on the first dyke 170A.Settable first spacer 180A is used to prevent from working as
DSD dark spot defect occurs when mask contacts first electrode 161A in the technique of depositing light emitting layer 162.Mask can have its center portion
Sagging characteristic, hanging portion may contact first electrode 161A.The first spacer 180A according to an embodiment is settable
On the first dyke 170A and sagging mask can be separated certain distance with first electrode 161A, to make sagging mask
First electrode 161A will not be touched.Therefore, because mask does not contact first electrode 161A, so preventing the hair of DSD dark spot defect
It is raw.
Encapsulated layer 190 may be provided on luminescent layer 162, for preventing the infiltration of moisture or gas, to protect vulnerable to outside
The luminescent layer 162 that moisture or oxygen influence.That is encapsulated layer 190 may be provided at the display area AA of substrate 100 and non-display
To cover second electrode 163 in the IA of region.Encapsulated layer 190 according to an embodiment can be formed by inorganic layer or organic layer, or
Person is formed as the multilayered structure that inorganic layer and organic layer are alternately stacked.
Encapsulated layer 190 can effectively prevent the infiltration of outside moisture, thus the side surface of display area AA can be fully sealed, from
And thin film transistor (TFT) T and light emitting device layer 160 of the protection setting in the AA of display area.Encapsulated layer according to an embodiment
190 can be set to cover the respective side surface of the first dyke 170A and first spacer 180A adjacent with wiring contacts portion CP.
First dyke 170A and the first spacer 180A may be provided on the side surface of light emitting device layer 160.Therefore, when the first dyke
When the respective side surface of 170A and the first spacer 180A are exposed to outside, outside moisture and gas can be via the first dyke 170A
Light emitting device layer 160 is reached with the first spacer 180A.Therefore, the interval the salable first dyke 170A of encapsulated layer 190 and first
The respective side surface of object 180A makes it from the infiltration of outside moisture and gas to protect light emitting device layer 160.
Wiring 161B may be provided in the bending region BA of substrate 100.In detail, wiring 161B may be provided at positioned at curved
On planarization layer 150 in the BA of folding area domain.Driver 300 can be electrically connected to driving and matched by wiring 161B according to an embodiment
It line 133 and can be formed by metal wire.
Ultra high-definition (UHD) mode based on oganic light-emitting display device, wiring 161B according to an embodiment can be by straight
Line (rectilinear) metal wiring is formed, with fine pattern.Since wiring 161B should be in a limited space to drive
Dynamic wiring 133 sends data-signal, so wiring width and patch bay can respectively be set as about 2 μm to 4 μm.
Wiring 161B can be formed by material identical with first electrode 161A.It can be in the technique of deposition first electrode 161A
Form wiring 161B.It is formed on planarization layer 150 that is wiring 161B and first electrode 161A can be used as identical layer, thus
It can be formed simultaneously.
Wiring 161B according to the present invention may be provided on the planarization layer 150 of the organic material comprising good adhesion,
Individual adhesive layer can be thus not provided with.As in the related technology deposition 131/ drain electrode 132 of source electrode work
It is formed in skill in the situation of wiring 161B, setting should be used to reinforce substrate 100 and wiring between substrate 100 and wiring 161B
The additional adhesive layer of adhesion strength between 161B.However, since wiring 161B according to the present invention is arranged in planarization layer 150
On, so additional adhesive layer can not needed, thus reduce the quantity of mask in a manufacturing process.
Second dyke 170B may be provided on wiring 161B.The second dyke 170B according to an embodiment can be by with first
The identical organic material of dyke 170A forms and can be patterned to be formed in the depositing operation for forming the first dyke 170A.The
Two dyke 170B can be by for preventing the material of moisture penetration from being formed and wiring 161B can be protected to make it from outside moisture
Or particle.
Second spacer 180B may be provided on the second dyke 170B.The second spacer 180B according to an embodiment can
It is formed by material identical with the first spacer 180A and can be in the depositing operation for forming the first spacer 180A by pattern
Change and is formed.As the second dyke 170B, the second spacer 180B can be by for preventing the material of moisture penetration from being formed and can
161B is to make it from outside moisture or particle for protection wiring.In addition, can be adjusted by adjusting the thickness of the second spacer 180B
Bend the neutral surface in the BA of region.Neutral surface is the central core for bending the whole thickness in the BA of region.
Coat 200 may be provided in the whole surface or whole region of bending region BA of substrate 100, to cover second
Spacer 180B.Coat 200 according to an embodiment can be formed by photo-curable resin and can be coated on according to this hair
On the target area of bright oganic light-emitting display device.In this regard, coat 200 can be coated on the whole table of bending region BA
On face.
Coat 200 according to an embodiment can be coated into predetermined thickness, so as to adjust according to the present embodiment
Oganic light-emitting display device in, substrate 100 is set bending region BA in part neutral surface.In detail, may be used
The neutral surface in the bending region BA of oganic light-emitting display device is adjusted by coat 200, so that neutral surface can be set in cloth
In line 161B.
Contact hole CH may be provided in interlayer insulating film 140 and planarization layer 150.Driving wiring 133 can pass through contact hole
CH is electrically connected to wiring 161B.Since interlayer insulating film 140 and planarization layer 150 are formed as covering driving wiring 133, so being
Wiring 161B is electrically connected to driving wiring 133, settable contact hole CH.It can be by using photoetching process and etch process
The removal of sectional hole patterns chemical industry the skill interlayer insulating film 140 and planarization layer 150 overlapping with a part of wiring 161B, are consequently formed and connect
Contact hole CH.
Oganic light-emitting display device according to the present invention may include wiring contacts portion CP.
Wiring contacts portion CP may be provided in a part of display area AA and can be driving wiring 133 and is electrically connected to
It is routed the region of 161B.That is wiring contacts portion CP can be the region including contact hole CH.
It can be connect by removing the interlayer insulating film 140 and planarization layer 150 overlapping with a part of wiring 161B to be arranged
Contact hole CH.Wiring 161B can be electrically connected to driving wiring 133 by contact hole CH.In detail, the side for being routed 161B can be set
It is set to the upper surface that directly contact is located at the planarization layer 150 on the left of contact hole CH, and the other side for being routed 161B is settable
It is located at the upper surface of the planarization layer 150 on the right side of contact hole CH at directly contact.Therefore, wiring 161B can pass through contact hole CH electricity
It is connected to driving wiring 133.
Here, the planarization layer 150 being located on the left of contact hole CH can be the planarization being arranged in wiring contacts portion CP
Layer 150, the planarization layer 150 on the right side of contact hole CH can be the planarization layer 150 being arranged in bending region BA.
As described above, wiring 161B can be electrically connected by contact hole CH in oganic light-emitting display device according to the present invention
It is connected to driving wiring 133, thus can easily and safely execute bending technique.In detail, in the structure of the relevant technologies, by
Be formed as extending to driver 300 in driving wiring 133, so in the driving wiring 133 being set in bending region BA
In can be easy to happen rupture, and short circuit can be easy to happen.On the other hand, in oganic light-emitting display device according to the present invention
In, due to driving wiring 133 be not extend to bending region BA (such as driving wiring 133 bending region BA edge before eventually
Wiring 161B only) and on the planarization layer 150 comprising organic insulating material is separately provided, so by being applied to bending region
The caused degree damaged of stress, tension or other external force of wiring 161B in BA reduces.Therefore, it can easily and safely hold
Row bending technique.
Referring again to Fig. 2, encapsulated layer 190 can be set to covering wiring contacts portion CP.That is encapsulated layer 190 is settable
At covering contact hole CH and the infiltration of outside moisture and particle can be prevented.Contact hole can be formed by etching planarization layer 150
CH, thus drive wiring 133 and thin film transistor (TFT) T that can be easy to be exposed to outside by contact hole CH.Therefore, according to this hair
In bright oganic light-emitting display device, encapsulated layer 190 is formed as hole CH in sealing contact and the wiring contacts including contact hole CH
Portion CP, thus can protective film transistor T to make it from the infiltration of outside moisture.
Fig. 3 is the sectional view of the line I-I ' along Fig. 1, and it is aobvious which illustrates the organic light emissions of second embodiment according to the present invention
Show equipment.Referring to Fig. 3, in addition to wiring contacts portion CP, the oganic light-emitting display device of second embodiment has according to the present invention
There is construction identical with the oganic light-emitting display device of first embodiment according to the present invention.Therefore, it can be not repeated identical
Description, is described below the modified construction in wiring contacts portion.
Referring to Fig. 3, oganic light-emitting display device according to the present embodiment may include planarization layer 150 and encapsulated layer 190.
Planarization layer 150 may be provided at substrate 100 whole region other than the wiring contacts portion CP of substrate 100 or
On entire area.That is planarization layer 150 can be set to multiple portions, adjacent planarization layer 150 (such as planarization layer
150 adjacent part) can be separated from one another and wiring contacts portion CP is therebetween.It is flat due to not formed in wiring contacts portion CP
Smoothization layer 150, so one with wiring 161B can be removed by using photoetching process and the sectional hole patterns chemical industry skill of etch process
Divide overlapping interlayer insulating film 140, contact hole CH is consequently formed.
Since planarization layer 150 according to an embodiment is formed by organic material, so compared with inorganic material, it is more difficult to
Planarization layer 150 is etched, and the size of contact hole CH increases (for example, contact hole CH is needing to etch via planarization layer 150
Shi Biankuan).However, in the oganic light-emitting display device of second embodiment according to the present invention, due in wiring contacts portion CP
In do not form planarization layer 150, so can pass through etching interlayer insulating film 140 containing inorganic materials forms contact hole CH.Cause
This, the technique for forming contact hole CH can be relatively easy, and can reduce the size of contact hole CH.Stated differently, since interlayer is exhausted
Edge layer 140 is easier to etch, and contact hole CH can be made to smaller.This improves aperture opening ratios.
Wiring 161B can be electrically connected to driving wiring 133 by contact hole CH.In detail, the side for being routed 161B can be set
It is set to the upper surface that directly contact is located at the interlayer insulating film 140 on the left of contact hole CH, and the other side for being routed 161B can be set
It is set to the upper surface that directly contact is located at the planarization layer 150 on the right side of contact hole CH.Therefore, wiring 161B can pass through contact hole CH
It is electrically connected to driving wiring 133.
Here, the interlayer insulating film 140 being located on the left of contact hole CH can be the interlayer being arranged in wiring contacts portion CP
Insulating layer 140, the planarization layer 150 on the right side of contact hole CH can be the planarization layer 150 being arranged in bending region BA.
Encapsulated layer 190 can be set to cover the side surface of the planarization layer 150 adjacent with wiring contacts portion CP.Planarization layer
150 can be set to covering thin film transistor (TFT) T, thus when the side surface of planarization layer 150 is exposed to outside, external moisture warp
Thin film transistor (TFT) T is reached by planarization layer 150.Therefore, the side of the salable planarization layer 150 of encapsulated layer 190 according to the present invention
Surface makes it from the infiltration of outside moisture with protective film transistor T.
Fig. 4 is putting for the structure in the bending region in the oganic light-emitting display device illustrated according to an embodiment of the present invention
Big figure.
It may be provided in wiring 161B referring to Fig. 4, neutral surface NP (for example, between the region of compression and the region of extension
Concept plane or interface, on neutral surface there are the stress of the smallest length direction or there is no the stress of length direction).
With the bending of substrate 100, for specific surface (specific surface), side can be stretched, separately
Side is shrinkable.In this case, neutral surface NP can indicate the surface in centrally disposed part and not having retractility.?
This, neutral surface NP can indicate in oganic light-emitting display device according to the present embodiment, the bending region of substrate 100 is arranged in
The neutral surface of part in BA.For example, wiring 161B may be provided on or near the region there are neutral surface, to minimize wiring
Stress on 161B.
It, can be by the way that the organic layer bent in the BA of region be arranged in oganic light-emitting display device according to the present embodiment
It adjusts neutral surface NP (for example, neutral surface can be made to more thickness based on coat 200 there are position to change).For example, with
It is coated with coat 200 thicker, neutral surface NP can rise to the upper section of substrate 100 and can be located in wiring 161B.This
Outside, the settable second spacer 180B in bending region BA, thus neutral surface NP can be based on the thickness of the second spacer 180B
Influence and increase, thus neutral surface NP can be located at wiring 161B the region vulnerable to stress influence in.
When neutral surface NP is located in wiring 161B, the folding s tress for being applied to wiring 161B is minimized, thus stress
It is minimized.In addition, will not rupture in maximum bending, thus it can easily and safely execute oganic light-emitting display device
Bending technique.In other words, wiring 161B is arranged such that wiring 161B is present in neutral surface (example when substrate bending
Such as, most home or the region of the bending stress of minimum are subjected to).
As described above, the oganic light-emitting display device of embodiment can be easy to carry out bending and effectively according to the present invention
Luminescent device is protected on ground, to make it from the infiltration of outside moisture.
Without departing substantially from the spirit or scope of the present invention, it can carry out various modifications and change in the present invention,
This will be apparent to a person skilled in the art.Therefore, the present invention is directed to cover the appended claims model
It encloses and its modifications of the present invention and variation in equivalency range.
Claims (15)
1. a kind of oganic light-emitting display device, comprising:
Substrate including display area and bending region；
Pel array layer, the pel array layer include the driving wiring in the display area and are connected to the driving
The thin film transistor (TFT) of wiring；
Cover the planarization layer of the pel array layer；
It is arranged on the planarization layer and is connected to the light emitting device layer of the thin film transistor (TFT)；
It is arranged in the bending region and is connected to the wiring of the driving wiring；
Wiring contacts portion, the wiring contacts portion include the contact hole that the driving wiring is electrically connected to the wiring；With
Cover the encapsulated layer of the light emitting device layer and the wiring contacts portion.
2. oganic light-emitting display device according to claim 1, wherein the light emitting device layer includes:
It is arranged on the planarization layer and is connected to the first electrode of the thin film transistor (TFT)；
Luminescent layer on the first electrode is set；With
Second electrode on the light-emitting layer is set,
Wherein the wiring includes material identical with the material of the first electrode.
3. oganic light-emitting display device according to claim 1, wherein the planarization layer be additionally provided on it is described curved
In the domain of folding area, and
The wiring is arranged on the planarization layer in the bending region.
4. oganic light-emitting display device according to claim 3, further includes:
The interlayer insulating film of the driving wiring is covered,
Wherein the contact hole is arranged in the interlayer insulating film.
5. oganic light-emitting display device according to claim 4, wherein the side of the wiring is directly contacted positioned at described
The upper surface of planarization layer in wiring contacts portion, and
The other side of the wiring directly contacts the upper surface for the planarization layer being located in the bending region.
6. oganic light-emitting display device according to claim 4, wherein the side of the wiring directly contacts the interlayer
The upper surface of insulating layer, and
The other side of the wiring directly contacts the upper surface for the planarization layer being located in the bending region.
7. oganic light-emitting display device according to claim 1, further includes:
First dyke, first dyke is arranged between the planarization layer and the encapsulated layer, to limit light emitting region；With
The second dyke in the wiring is set,
Wherein the encapsulated layer covers the side surface of first dyke adjacent with the wiring contacts portion.
8. oganic light-emitting display device according to claim 7, further includes:
The first spacer between first dyke and the encapsulated layer is set；With
The second spacer in second dyke is set,
Wherein the encapsulated layer covers the side surface of first spacer adjacent with the wiring contacts portion.
9. oganic light-emitting display device according to claim 8, further includes:
Coat on second spacer is set.
10. oganic light-emitting display device according to claim 9, wherein the neutral surface in the bent area domain is located at the cloth
In line.
11. oganic light-emitting display device according to claim 1, wherein the thin film transistor (TFT) includes gate electrode, source
Pole electrode and drain electrode, the driving wiring is by its with the gate electrode, the source electrode and the drain electrode
One of identical material formed.
12. oganic light-emitting display device according to claim 1, wherein the planarization layer connects in the bending region
Touch the substrate.
13. oganic light-emitting display device according to claim 1, wherein the light emitting device layer includes positioned at described flat
Change first electrode, the luminescent layer in the first electrode and the second electrode on the luminescent layer on layer,
Described in be routed and formed by material identical with the first electrode.
14. oganic light-emitting display device according to claim 1, wherein the driving wiring is not extend to the bent area
Domain.
15. oganic light-emitting display device according to claim 1, wherein the contact for being routed in the wiring contacts portion
The driving wiring is directly contacted in hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310657362.7A CN116634809A (en) | 2017-09-28 | 2018-08-27 | Organic light emitting display device |
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| KR10-2017-0125723 | 2017-09-28 | ||
| KR1020170125723A KR102392993B1 (en) | 2017-09-28 | 2017-09-28 | Organic light emitting display device |
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| US (2) | US10665653B2 (en) |
| KR (1) | KR102392993B1 (en) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816076A (en) * | 2019-07-26 | 2020-10-23 | 友达光电股份有限公司 | Display panel |
| CN113013197A (en) * | 2019-12-18 | 2021-06-22 | 乐金显示有限公司 | Display device |
| WO2021168828A1 (en) * | 2020-02-28 | 2021-09-02 | 京东方科技集团股份有限公司 | Flexible display panel, display apparatus and preparation method |
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| WO2019187047A1 (en) * | 2018-03-30 | 2019-10-03 | シャープ株式会社 | Display device |
| CN112602377A (en) * | 2018-08-24 | 2021-04-02 | 株式会社半导体能源研究所 | Light-emitting device, light-emitting module, electronic apparatus, and method for manufacturing light-emitting device |
| KR102620972B1 (en) * | 2018-10-23 | 2024-01-05 | 삼성디스플레이 주식회사 | Display apparatus |
| CN109860239B (en) * | 2018-12-13 | 2021-03-16 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111106259B (en) * | 2019-12-04 | 2021-01-15 | 武汉华星光电半导体显示技术有限公司 | Bendable organic light emitting diode display panel and organic light emitting diode display screen |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20190036617A (en) | 2019-04-05 |
| CN109585494B (en) | 2023-06-23 |
| KR102392993B1 (en) | 2022-04-29 |
| US10665653B2 (en) | 2020-05-26 |
| CN116634809A (en) | 2023-08-22 |
| US11063101B2 (en) | 2021-07-13 |
| US20190096974A1 (en) | 2019-03-28 |
| US20200251546A1 (en) | 2020-08-06 |
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