CN109584922A - One kind is for reference magnetic tunneling junction cell screening technique in magnetic RAM - Google Patents
One kind is for reference magnetic tunneling junction cell screening technique in magnetic RAM Download PDFInfo
- Publication number
- CN109584922A CN109584922A CN201710899558.1A CN201710899558A CN109584922A CN 109584922 A CN109584922 A CN 109584922A CN 201710899558 A CN201710899558 A CN 201710899558A CN 109584922 A CN109584922 A CN 109584922A
- Authority
- CN
- China
- Prior art keywords
- resistance
- magnetic tunnel
- reference magnetic
- referring
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
One kind is for reference magnetic tunneling junction cell screening technique in magnetic RAM, for screening reference magnetic tunneling junction cell in spin-torque magnetic RAM, the resistance that a known resistance value is added in circuit is used as referring to detection resistance, then all reference magnetic tunnel knots are successively write into high-impedance state or low configuration, the reference magnetic tunnel knot is compared with described referring to detection resistance one by one, and bad reference magnetic tunnel knot is recorded；Finally obtain the reference magnetic tunnel knot allowed access into referring to average circuit.Method disclosed by the invention can exclude bad reference magnetic tunnel knot participation reference resistance and be averaged, and solve the problems, such as largely cannot accurately read as the data accumulating unit of reference due to being present such that for bad reference magnetic tunnel knot.
Description
Technical field
The invention belongs to the data read-write method of the memory in semiconductor chip memory area more particularly to a kind of use
The reference magnetic tunneling junction cell screening technique in magnetic RAM.
Background technique
Magnetic RAM (MRAM) is a kind of emerging non-volatile holographic storage technology.It possesses the read or write speed of high speed
And high integration, and can be repeatedly written by unlimited number of.
Different magnetic RAMs changes the direction of magnetization of memory layer using different methods.The conversion of first generation field
Magnetic RAM is to generate magnetic field in magnetic tunnel junction to change the magnetic direction of memory layer with larger current.New spin
It is using current impulse directly through magnetic tunnel junction that torque, which converts magnetic RAM (STT MRAM), and sense of current can
To change the direction of magnetization of memory layer, to determine the Resistance states of magnetic tunnel junction and the logical states of magneto-resistor memory unit.
Not only energy consumption is very low for this novel magnetic RAM, but also since required switching current can be with magnetic tunnel
The size of knot reduces and the demand that reduces, therefore future semiconductor die junction size can be suitble to further reduce.But with
Magnetic tunnel junction size in magnetic RAM constantly reduce, also higher and higher, existing work is required to the technique of manufacture
The uniformity of magneto-resistor is also worse and worse under skill.
The data for reading magneto-resistor memory unit, seek to detect its magnetic tunnel junction be in high-resistance state " 1 " or
Low resistance state " 0 ".In order to accurately distinguish Resistance states, magnetic tunnel junction requires to reach high magnetic resistivity (resistance difference and low resistance
Ratio).The high low resistance state distribution of the magnetic tunnel junction of magnetic RAM is a double bell-shaped curve, as shown in Figure 1.And
And since there is also inhomogeneities for magnetic tunnel junction magnetic resistivity, magnetic tunnel junction high-impedance state is opposite to be had more greatly with low configuration
Standard deviation, so this double bell-shaped curve is not symmetrical with midpoint resistance value.In the case where corresponding to certain serious forgiveness,
The selectable range of reference is as shown in Figure 1.
Existing reading technology generally uses using median average resistance value as reference and determines magnetic tunnel junction to be measured
The method of Resistance states: one group of a certain number of high-resistance state and a certain number of low resistance state reference magnetic tunnels in average same wordline
Road knot is as reference resistance value compared with detected magnetic tunnel junction resistance value.Average multiple magnetic tunnel junction resistance values
Method can reduce to a certain extent due to resistance standard difference it is larger caused by reference resistance value deviate intermediate value the problem of.But
In the case that resistance standard difference in magnetic tunnel junction is bigger or its yield is not very high, the magnetism that is averaged individually
It is very high or very low or even breaking or breaking that tunnel knot is possible to resistance value, and the resistance value of reference is made to completely offset from high resistance
The intermediate value of state and low resistance state.If the resistance value of a reference is deviated from referring to range, it will so that all as reference
Mistake may occur for magnetic tunnel junction reading to be measured.Especially in present magnetic RAM, hold to reduce unit
The area of amount, reduces the ratio of reference magnetic tunnel knot number and data accumulating unit number, and one group of reference magnetic tunnel knot is past
It is past to be shared by a large amount of position memory unit.Consequence caused by one bad reference magnetic tunnel knot is also even more serious.
Summary of the invention
In view of the above drawbacks of the prior art, the purpose of the present invention is to provide one kind for joining in magnetic RAM
According to magnetic tunneling junction cell screening technique, capable of excluding bad reference magnetic tunnel knot, to participate in reference resistance average, solve due to
Bad reference magnetic tunnel knot is present such that the problem of largely cannot accurately reading as the data accumulating unit of reference.
To achieve the above object, the present invention provides one kind for reference magnetic tunneling junction cell in magnetic RAM
Screening technique specifically comprises the following steps: for screening reference magnetic tunneling junction cell in spin-torque magnetic RAM
S1. the resistance that a known resistance value is added in circuit is used as referring to detection resistance；
S2. all reference magnetic tunnel knots are write into high-impedance state；
S3. the reference magnetic tunnel knot is compared with described referring to detection resistance one by one, if a ginseng
It is less than the reference detection resistance resistance value according to magnetic tunnel junction resistance value, then records the reference magnetic tunnel and become bad reference magnetic
Tunnel knot；
S4. all reference magnetic tunnel knots are write into low resistance state；
S5. the reference magnetic tunnel knot is compared with described referring to detection resistance one by one, if a ginseng
It is greater than the reference detection resistance resistance value according to magnetic tunnel junction resistance value, then records the reference magnetic tunnel and become bad reference magnetic
Tunnel；
S6. it obtains allowing access into the reference magnetic tunnel knot referring to average circuit；It will contain simultaneously described bad
Reference magnetic tunnel knot reference column keeps a record, it is described referring to column will as redundancy referring to column and referenced column selector exclude not
Into referring to average circuit.
Further, the reference detection resistance in the step S1 is the magnetic tunnel of the magnetic RAM
The high-resistance resistors peak value of knot and the intermediate value of low resistance state peak value of resistance.
What the method for the present invention obtained allows access into the reference magnetic tunnel knot referring to average circuit, and high-resistance state resistance value is big
In the intermediate value of memory element array high-resistance resistors peak value and low resistance state peak value of resistance, reference magnetic tunnel knot will not be short circuit or non-
Normal low resistance；Its low resistance state resistance value is less than the intermediate value of memory element array high-resistance resistors peak value and low resistance state peak value of resistance,
Reference magnetic tunnel knot will not be open circuit or improper high resistance.Average such a certain number of high-resistance states and low resistance state ginseng
The reference resistance value obtained according to magnetic tunnel junction resistance value this reference resistance value and can be detected in normal referring within range
Magnetic tunnel junction resistance value compare, can accurately read the data that memory unit is stored.
Detailed description of the invention
Fig. 1 is the high low resistance state distribution map of the magnetic tunnel junction of magnetic RAM.
Fig. 2 is a preferred embodiment of the present invention for reference magnetic tunneling junction cell screening side in magnetic RAM
Method flow diagram.
Specific embodiment
The preferred embodiments of the present invention will be described in detail below so that advantages and features of the invention can be easier to by
It will be appreciated by those skilled in the art that so as to make a clearer definition of the protection scope of the present invention.
One kind is for reference magnetic tunneling junction cell screening technique in magnetic RAM, for screening spin-torque magnetic
Reference magnetic tunneling junction cell in property random access memory, detailed process is as shown in Fig. 2, include the following steps:
The resistance that a known resistance value is added in step 1. in circuit is used as referring to detection resistance.
The high-resistance resistors peak value and low resistance state referring to the magnetic tunnel junction that detection resistance is magnetic RAM
The intermediate value of peak value of resistance
All reference magnetic tunnel knots are write high-impedance state by step 2.；
Step 3. is one by one compared the reference magnetic tunnel knot with described referring to detection resistance, if described in one
Reference magnetic tunnel knot resistance value is less than the reference detection resistance resistance value, then records the reference magnetic tunnel and become bad reference magnetic
Property tunnel knot.
All reference magnetic tunnel knots are write low resistance state by step 4..
Step 5. is one by one compared the reference magnetic tunnel knot with described referring to detection resistance, if described in one
Reference magnetic tunnel knot resistance value is greater than the reference detection resistance resistance value, then records the reference magnetic tunnel and become bad reference magnetic
Property tunnel.
Step 6. obtains allowing access into the reference magnetic tunnel knot referring to average circuit；It simultaneously will be containing described in not
The reference column of good reference magnetic tunnel knot keep a record, and the reference column will be as redundancy referenced column selector exclusion referring to column
Do not enter referring to average circuit.
The disclosed ginseng obtained for reference magnetic tunneling junction cell screening technique in magnetic RAM of the present embodiment
Be in normal referring within range according to resistance value, this reference resistance value compared with the magnetic tunnel junction resistance value being detected,
The data that memory unit is stored can accurately be read.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that the ordinary skill of this field is without wound
The property made labour, which according to the present invention can conceive, makes many modifications and variations.Therefore, all technician in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be within the scope of protection determined by the claims.
Claims (2)
1. one kind is for reference magnetic tunneling junction cell screening technique in magnetic RAM, for screening spin-torque magnetism
Reference magnetic tunneling junction cell in random access memory, which is characterized in that specifically comprise the following steps:
S1. the resistance that a known resistance value is added in circuit is used as referring to detection resistance；
S2. all reference magnetic tunnel knots are write into high-impedance state；
S3. the reference magnetic tunnel knot is compared with described referring to detection resistance one by one, if one described referring to magnetic
Property tunnel knot resistance value be less than described referring to detection resistance resistance value, then record the reference magnetic tunnel and become bad reference magnetic tunnel
Knot；
S4. all reference magnetic tunnel knots are write into low resistance state；
S5. the reference magnetic tunnel knot is compared with described referring to detection resistance one by one, if one described referring to magnetic
Property tunnel knot resistance value be greater than described referring to detection resistance resistance value, then record the reference magnetic tunnel and become bad reference magnetic tunnel
Road；
S6. it obtains allowing access into the reference magnetic tunnel knot referring to average circuit；The bad reference will be contained simultaneously
The reference column of magnetic tunnel junction keep a record, and the reference column will be used as redundancy referring to column and referenced column selector excludes not enter
Referring to average circuit.
2. as claim removes the reference magnetic tunneling junction cell screening technique, which is characterized in that in the step S1
The high-resistance resistors peak value and low resistance state resistance referring to the magnetic tunnel junction that detection resistance is the magnetic RAM
The intermediate value of peak value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710899558.1A CN109584922B (en) | 2017-09-28 | 2017-09-28 | Method for screening reference magnetic tunnel junction unit in magnetic random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710899558.1A CN109584922B (en) | 2017-09-28 | 2017-09-28 | Method for screening reference magnetic tunnel junction unit in magnetic random access memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109584922A true CN109584922A (en) | 2019-04-05 |
| CN109584922B CN109584922B (en) | 2021-05-11 |
Family
ID=65913887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710899558.1A Active CN109584922B (en) | 2017-09-28 | 2017-09-28 | Method for screening reference magnetic tunnel junction unit in magnetic random access memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109584922B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104718576A (en) * | 2012-10-15 | 2015-06-17 | 马维尔国际贸易有限公司 | Systems and methods for reading resistive random access memory (RRAM) cells |
| US20150348625A1 (en) * | 2013-09-10 | 2015-12-03 | Kabushiki Kaisha Toshiba | Resistance change type memory |
| CN106558333A (en) * | 2015-09-29 | 2017-04-05 | 中国科学院物理研究所 | Including the spin transfer torque MAGNETIC RANDOM ACCESS MEMORY of annular magnet tunnel knot |
| US20170133073A1 (en) * | 2014-08-20 | 2017-05-11 | Everspin Technologies, Inc. | Redundant magnetic tunnel junctions in magnetoresistive memory |
-
2017
- 2017-09-28 CN CN201710899558.1A patent/CN109584922B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104718576A (en) * | 2012-10-15 | 2015-06-17 | 马维尔国际贸易有限公司 | Systems and methods for reading resistive random access memory (RRAM) cells |
| US20150348625A1 (en) * | 2013-09-10 | 2015-12-03 | Kabushiki Kaisha Toshiba | Resistance change type memory |
| US20170133073A1 (en) * | 2014-08-20 | 2017-05-11 | Everspin Technologies, Inc. | Redundant magnetic tunnel junctions in magnetoresistive memory |
| CN106558333A (en) * | 2015-09-29 | 2017-04-05 | 中国科学院物理研究所 | Including the spin transfer torque MAGNETIC RANDOM ACCESS MEMORY of annular magnet tunnel knot |
Non-Patent Citations (2)
| Title |
|---|
| A. CHINTALURI, H. NAEIMI, S. NATARAJAN AND A. RAYCHOWDHURY: "Analysis of Defects and Variations in Embedded Spin Transfer Torque (STT) MRAM Arrays", 《IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS》 * |
| 蔡建旺: "磁电子学器件应用原理", 《物理学进展》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109584922B (en) | 2021-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9721632B2 (en) | Redundant magnetic tunnel junctions in magnetoresistive memory | |
| EP1609153B1 (en) | Simultaneous reading from and writing to different memory cells | |
| US11832525B2 (en) | Dual magnetic tunnel junction stack | |
| US9659641B2 (en) | On-chip resistance measurement circuit and resistive memory device including the same | |
| US20160078915A1 (en) | Resistance change memory | |
| CN108257633B (en) | MRAM chip and reading method of memory cell thereof | |
| US11942139B2 (en) | Performing refresh operations on memory cells | |
| CN105449099A (en) | Intersected matrix array type magnetic random access memory and reading-writing method thereof | |
| US20240040936A1 (en) | Memory Device With Source Lines in Parallel | |
| CN105895152B (en) | A kind of storage array read method based on single-phase conducting storage unit | |
| US8547734B1 (en) | Method of reading from and writing to magnetic random access memory (MRAM) | |
| US8873273B2 (en) | Semiconductor storage device and test method thereof | |
| CN107767918A (en) | A kind of MRAM chip and its method of testing | |
| CN109584922A (en) | One kind is for reference magnetic tunneling junction cell screening technique in magnetic RAM | |
| TWI537947B (en) | Magnetoresistive memory device | |
| CN1503976B (en) | Method for operating MRAM semiconductor memory arrangement | |
| CN107342103A (en) | A kind of magnetic RAM and its Magnetic memory cell reading method | |
| CN108257635B (en) | Magnetic random access memory and reading method thereof | |
| JP4483540B2 (en) | Storage device | |
| CN108257636B (en) | Magnetic random access memory and reading method thereof | |
| Ohsawa | A new read scheme for high-density emerging memories | |
| CN110033801B (en) | Redundancy reference layout circuit for magnetic random access memory | |
| CN108257634A (en) | Magnetic tunnel junction reading circuit, MRAM chip and read method | |
| CN110097904A (en) | Use the MRAM circuit and its reading/writing method of polishing reference unit | |
| CN109872740A (en) | A kind of MRAM chip using symmetric array reference unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |