CN109581824A - A kind of direct-write type lithography machine optical uniformity scaling method and system - Google Patents

A kind of direct-write type lithography machine optical uniformity scaling method and system Download PDF

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Publication number
CN109581824A
CN109581824A CN201811417241.0A CN201811417241A CN109581824A CN 109581824 A CN109581824 A CN 109581824A CN 201811417241 A CN201811417241 A CN 201811417241A CN 109581824 A CN109581824 A CN 109581824A
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exposure
optical uniformity
gray scale
obtains
direct
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CN109581824B (en
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李智
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Hefei Xinqi Microelectronic Equipment Co Ltd
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Hefei Xinqi Microelectronic Equipment Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention discloses a kind of direct-write type lithography machine optical uniformity scaling method and systems, belong to litho machine optical modulation techniques field, it is used to demarcate the optical uniformity error between pattern generator and light path system and mobile platform including it, CCD camera is arranged in the optical path of light path system, include the following steps: structure further of the production for DMD exposure, which includes scale map and Quan Baitu;Processing is exposed to structure further, obtains initial exposure figure;Integration processing is carried out to initial exposure figure, obtains optical uniformity gray scale template;It is realized using the optical uniformity gray scale template and launches arbitrary unit figure.The present invention is loaded into exposure system by calibration optical uniformity gray scale template, so that the optical uniformity of the figure finally exposed has obtained apparent improvement.

Description

A kind of direct-write type lithography machine optical uniformity scaling method and system
Technical field
The present invention relates to litho machine optical modulation techniques field, in particular to a kind of direct-write type lithography machine optical uniformity calibration Method and system.
Background technique
Photoetching technique is the composition that printing has feature on the surface of the substrate, and wherein substrate may include for manufacturing semiconductor Device, a variety of integrated circuits, flat-panel screens (such as liquid crystal display), circuit board, biochip, micromechanics electronic chip, The chip of photoelectron circuit chip etc..
In direct write exposure process, in the base station that places the substrate above platform that can be accurate mobile, by being in photoetching Characteristic composition, is projected the designated position of substrate surface by the movement of exposure device and platform inside equipment.
In order to realize high-precision exposure, improves product surface and handle quality, for pattern generator and motion platform X The determination of angle is particularly important between axis, Y direction.For above-mentioned direct-write type lithography machine, pattern generator company associated therewith A fixed angle equal error is had between optical control and motion platform.If this error amount and theoretical error value There are a deviation, then need finally to compensate optical uniformity.It needs before carrying out optical uniformity and compensating to light Homogeneity error is demarcated.
Summary of the invention
The purpose of the present invention is to provide a kind of direct-write type lithography machine optical uniformity scaling method, with.
In order to achieve the above object, the present invention uses a kind of direct-write type lithography machine optical uniformity scaling method, it is used for figure Optical uniformity error between shape generator and light path system and mobile platform is demarcated, and is included the following steps:
Structure further of the production for DMD exposure, which includes scale map and Quan Baitu;
Processing is exposed to structure further, obtains initial exposure figure;
Integration processing is carried out to initial exposure figure, obtains optical uniformity gray scale template;
It is realized using the optical uniformity gray scale template and launches arbitrary unit figure.
Preferably, described that processing is exposed to structure further, obtain initial exposure figure, comprising:
Using region alignment method, the scale map described in the Quan Baitu weeks edge exposure, to identify the Quan Baitu;
The Quan Baitu identified is exposed according to exposure dose from low to high using the direct-write lithography machine, obtains difference The figure of energy exposure.
Preferably, described that integration processing is carried out to initial exposure figure, obtain optical uniformity gray scale template, comprising:
The figure of the different-energy exposure is acquired using the CCD camera, and is identified in the figure of different-energy exposure The region that a certain exposure is opened;
Using the pixel in the region that a certain exposure of classifier classification shooting is opened, the color or gray scale of exposure figure are identified;
The figure of actual graphical and different-energy exposure is subjected to pixel matching mapping, obtains the Energy distribution of each region DMD;
According to the Energy distribution of each region DMD and gray scale linear ratio, the uniform gray level template is obtained.
Preferably, further includes:
It carries out the optical uniformity gray scale template to negate processing in the X-axis direction, obtains negating treated image;
Correspondingly, it is realized using the image that negates that treated and launches arbitrary unit figure.
Preferably, the plane where the pattern generator is parallel with the plane where the mobile platform.
On the other hand, a kind of direct-write type lithography machine optical uniformity calibration system, including pattern generator, optical path system are provided System, mobile platform, CCD camera and central processing unit, pattern generator, light path system, mobile platform, CCD camera are in Central processor connects, and the even wafer for having photosensitive material in surface is placed in the substrate of mobile platform, and central processing unit includes production Module, integrates module and loading module at exposure module, in which:
Production module is used to make the structure further for DMD exposure, which includes scale map and Quan Baitu;
Exposure module obtains initial exposure figure for being exposed processing to structure further;
Module is integrated for carrying out integration processing to initial exposure figure, obtains optical uniformity gray scale template;
Loading module, which is used to realize using the optical uniformity gray scale template, launches arbitrary unit figure.
Preferably, the exposure module includes the first exposing unit and the second exposing unit;
First exposing unit is used to utilize region alignment method, the scale map described in the Quan Baitu weeks edge exposure, to identify State Quan Baitu;
Second exposing unit carries out the complete white figure identified according to exposure dose from low to high using the direct-write lithography machine Exposure obtains the figure of different-energy exposure.
Preferably, it is described integrate module include acquisition unit, gray scale linear ratio computing unit, Energy distribution computing unit with And uniform gray level formwork calculation unit;
Acquisition unit acquires the figure of the different-energy exposure using the CCD camera, and in the figure of different-energy exposure In identify it is a certain exposure open region;
The pixel in the region that gray scale linear ratio computing unit is opened using a certain exposure of classifier classification shooting, identifies exposure diagram The color or gray scale of shape;
Energy distribution computing unit is used to the figure of actual graphical and different-energy exposure carrying out pixel matching mapping, obtains The Energy distribution of each region DMD;
Uniform gray level formwork calculation unit is used for Energy distribution and gray scale linear ratio according to each region DMD, obtains the ash Spend uniform template.
Preferably, the pattern generator includes an independently addressable pixel array, and each pixel is to transmission, reflection Or the light of diffraction carries out the modulation of phase, gray scale direction or switch state.
Preferably, the central processing module further includes negating module, is used for the optical uniformity gray scale template in X-axis It carries out negating processing on direction, obtains negating treated image.
Preferably, the plane where the pattern generator, the plane where the mobile platform and the CCD camera The plane at place is parallel to each other.
Compared with prior art, there are following technical effects by the present invention: the present invention is exposed processing to wafer first, right The exposure results of wafer carry out exposure-processed again, carry out development treatment to the result exposed again, by acquiring developing result, It is integrated, obtains the calibrating template of gradation uniformity, the template of the uniform gray level is loaded into Optical Coatings for Photolithography, it is equal to light Even property compensates,
Overcome and is had between the optical control and motion platform of the company associated therewith of pattern generator in Optical Coatings for Photolithography The problem of Energy distribution brought by one fixed angular error is uneven and the distortion of exposure field.
Detailed description of the invention
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail:
Fig. 1 is a kind of flow diagram of direct-write type lithography machine optical uniformity scaling method;
Fig. 2 is the structure further schematic diagram for DMD exposure;
Fig. 3 is the exposure results schematic diagram of structure further;
Fig. 4 is the calibration result schematic diagram to the exposure results schematic diagram of structure further;
Fig. 5 is optical uniformity gray scale template schematic diagram;
Fig. 6 is a kind of direct-write type lithography machine optical uniformity calibration system structural schematic diagram;
Fig. 7 is the structural schematic diagram of central processing unit.
Specific embodiment
In order to further explain feature of the invention, reference should be made to the following detailed description and accompanying drawings of the present invention.Institute Attached drawing is only for reference and purposes of discussion, is not used to limit protection scope of the present invention.
As shown in Figure 1, being used for present embodiment discloses a kind of direct-write type lithography machine optical uniformity scaling method to figure Optical uniformity error between generator and light path system and mobile platform is demarcated, and is arranged in the optical path of light path system CCD camera includes the following steps S1 to S4:
The structure further of S1, production for DMD exposure, which includes scale map and Quan Baitu;
S2, processing is exposed to structure further, obtains initial exposure figure;
S3, integration processing is carried out to initial exposure figure, obtains optical uniformity gray scale template;
S4, it is realized using the optical uniformity gray scale template and launches arbitrary unit figure.
It should be noted that the effective coverage Quan Baitu, that is, DMD, scale map is a series of cross figures, is distributed in full white region Periphery, for demarcating the position of the effective coverage DMD before the identification exposure open region in calibration interface.Wherein, interface parameter includes: DMD wide height;Starting point and the width that region need to be demarcated are high;And scale attribute: deviation, size and attribute;Parameter configuration can be reserved for, It can import and have configuration.
After parameter setting, click preview, then the right picture box can show the picture proportional to parameter configuration, including Scale map and Quan Baitu (in same width figure).
Output position is selected, output is clicked, then system can save scale map, Quan Baitu and configuration text in the case where selecting path Part, filename are respectively Ruler.bmp, ExposureArea.bmp, config.xml.
As shown in Fig. 2, the structure further made in the present embodiment includes scale map and Quan Baitu, Quan Baitu is i.e. micro- by number The effective coverage of reflecting mirror (Digital Micro-mirror Device, DMD), scale map are a series of cross mark figures, point Cloth is in complete white graph region periphery, for the position of the effective coverage of calibration DMD before the identification exposure open region in calibration interface.To list Bit pattern is exposed processing, and it is as shown in Figure 3 to obtain initial exposure graphic result.
As shown in Fig. 4 to Fig. 5, the present embodiment is developed by the exposure results to structure further, integration is handled, calibration Optical uniformity gray scale template, and the optical uniformity template (as shown in Figure 5) of generation is loaded into Optical Coatings for Photolithography and is used.
It should be noted that the imaging to DMD qaudrature-homogeneous is the key that form evenly sized CD in exposure system, However in actual optical system, since optical component is coaxial, the elements such as parallel are difficult to more accurately to adjust and device The optical tune ability of itself is not ideal, so can bring the uneven of Energy distribution in the imaging to DMD and expose The distortion of light field.In the present embodiment by building optical uniformity gray scale template by the analysis to Energy distribution by DMD crystallite battle array Column carry out the subregional energy of mode weakened segment of part closing, to achieve the effect that cloud light.In building light-emitting uniformity ash Template is spent, itself and DMD are subjected to throwing figure operation when exposure, uniformity template can be called to make the part DMD micro- in the process Crystalline substance is closed, to achieve the purpose that modulation light.
Preferably, above-mentioned steps S2: being exposed processing to structure further, obtains initial exposure figure, including walk as follows Rapid S21 to S22:
S21, using region alignment method, the scale map described in the Quan Baitu weeks edge exposure, to identify the Quan Baitu;
S22, the Quan Baitu identified is exposed according to exposure dose from low to high using the direct-write lithography machine, is obtained The figure of different-energy exposure.
It should be noted that being exposed by choosing different-energy value to Quan Baitu in the present embodiment, then acquire Uneven picture in the case where different-energy value obtains the energy of different location, to obtain the gray scale linear ratio of figure. Operating method under normal circumstances be select energy to carry out the exposures of different groups of energy values from low to high (online is that white figure is just complete Complete expose is opened), energy is excessive to be will lead to without obvious uneven trace.
Preferably, above-mentioned steps S3: carrying out integration processing to initial exposure figure, obtains optical uniformity gray scale template.Its Include the following steps S31 to S34:
S31, the figure that the different-energy exposure is acquired using the CCD camera, and know in the figure of different-energy exposure A certain the region opened Chu not be exposed;
S32, the pixel that the region that a certain exposure is opened is shot using classifier classification, identify the color or ash of exposure figure Degree, obtains gray scale linear ratio;
S33, the figure of complete white figure and different-energy exposure is subjected to pixel matching mapping, the region pair that will be exposed open under each energy The Energy distribution of each region DMD should be obtained to the energy of different location on DMD;
Wherein, Fig. 2 is the exposure image under a certain energy (V1 board, 91mj), and in Fig. 2,1,2,3 regions are to expose under this energy The region opened corresponds to the energy i.e. 91mj of same position on DMD.Position on digital micro-mirror, that is, corresponding is exactly to expose The position energy of figure (Quan Baitu).
S34, Energy distribution and gray scale linear ratio according to each region DMD, obtain the uniform gray level template.
Preferably, in the present embodiment after calculating uniform gray level template, further includes:
It carries out the optical uniformity gray scale template to negate processing in the X-axis direction, obtains negating treated image;
Correspondingly, it is realized using the image that negates that treated and launches arbitrary unit figure.
It should be noted that since the optical uniformity gray scale template of acquisition and actual DMD installation direction are reversed, institutes To be negated to optical uniformity gray scale template.
Preferably, the plane where the pattern generator is parallel with the plane where the mobile platform.
It should be noted that the effect of pattern generator is real-time display exposure drawing after obtaining computer command, it is mobile Platform surface, which is placed, is processed object, and only guaranteed two plane is parallel, correct exposure figure effectively could be projected sample Surface.
As shown in Figure 6 to 7, present embodiment discloses a kind of direct-write type lithography machine optical uniformity calibration systems, including figure Shape generator 3, light path system, mobile platform 6, CCD camera 9 and central processing unit 10, pattern generator 3, light path system, shifting Moving platform 6, CCD camera 9 are connect with central processing unit 10, are placed with that surface is even photosensitive material in the substrate 7 of mobile platform 6 Wafer, central processing unit 10 include production module 11, exposure module 12, integrate module 13 and loading module 14, in which:
Production module 11 is used to make the structure further for DMD exposure, which includes scale map and Quan Baitu;
Exposure module 12 obtains initial exposure figure for being exposed processing to structure further;
Module 13 is integrated for carrying out integration processing to initial exposure figure, obtains optical uniformity gray scale template;
Loading module 14, which is used to realize using the optical uniformity gray scale template, launches arbitrary unit figure.
Wherein, the light path system includes exposure light source 1, beam splitter 4, lens 5 and reflecting mirror 8, and pattern generator 3 is arranged In the optical path of exposure light source 1, beam splitter 4 is arranged in the optical path of 3 reflected light of pattern generator, and reflecting mirror 8 and lens 5 are arranged In the optical path that beam splitter 4 emits light, the CCD camera 9 is arranged in the reflected light optical path of reflecting mirror 8, the central processing Device 10 connect with 9 output end of CCD camera by communication unit 11 respectively, passes through communication unit 11 connect with exposure light source 1, It is connect by communication unit 11 with lens 5 and is connect by communication unit 11 and motion controller 12 with mobile platform 6.
Specifically, the plane where pattern generator, the plane where mobile platform and the plane phase where CCD camera It is mutually parallel.
Preferably, the CCD camera in the present embodiment is semiconductor devices, arranges a series of photosensitive element matrix thereon.
Preferably, the pattern generator in the present embodiment includes independently addressable and control a pixel array, each Pixel can generate the modulation including phase, gray scale direction or switch state to the light of transmission, reflection and diffraction.
Preferably, exposure module includes the first exposing unit and the second exposing unit;
First exposing unit is used to utilize region alignment method, the scale map described in the Quan Baitu weeks edge exposure, to identify State Quan Baitu;
Second exposing unit carries out the complete white figure identified according to exposure dose from low to high using the direct-write lithography machine Exposure obtains the figure of different-energy exposure.
Preferably, it is described integrate module include acquisition unit, gray scale linear ratio computing unit, Energy distribution computing unit with And uniform gray level formwork calculation unit;
Acquisition unit acquires the figure of the different-energy exposure using the CCD camera, and in the figure of different-energy exposure In identify it is a certain exposure open region;
The pixel in the region that gray scale linear ratio computing unit is opened using a certain exposure of classifier classification shooting, identifies exposure diagram The color or gray scale of shape;
Energy distribution computing unit is used to the figure of actual graphical and different-energy exposure carrying out pixel matching mapping, obtains The Energy distribution of each region DMD;
Uniform gray level formwork calculation unit is used for Energy distribution and gray scale linear ratio according to each region DMD, obtains the ash Spend uniform template.
Preferably, central processing module further includes negating module, is used for the optical uniformity gray scale template in X-direction On carry out negating processing, obtain negating treated image.
It should be noted that the imaging for DMD qaudrature-homogeneous is the pass to form evenly sized CD in exposure system Key, and in actual optical system, since optical component is difficult to more accurately be adjusted for the elements such as axis, parallel, with And the optical tune ability of device itself and non-ideal, bring Energy distribution uneven in the imaging to DMD and exposure field Distortion.Scale required for the present embodiment application exposure system exposes and Quan Baitu obtain Quan Baitu under different-energy state Exposure effect screenshot, and carry out integration processing, obtain the compensation effect figure of DMD overturning, reach litho machine optical modulation Purpose.Acquired gray scale template needs multiple field experiment to obtain.
In the present embodiment in the calibration process of optical uniformity gray scale template, in all edge exposures of calibration region (i.e. Quan Baitu) Scale map (i.e. cross frame) improves the accuracy of calibration pixel, eliminates distortion by image processing method aligned region profile It influences.Simultaneously by carrying out the exposure-processed under not energy to complete white figure, integration obtains optical uniformity gray scale template, is loaded onto light In quarter machine system, the optical uniformity of gradation exposure can be improved to ± 5%, so that the optical uniformity of the figure finally exposed obtains It is apparent to improve.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of direct-write type lithography machine optical uniformity scaling method, which is characterized in that it is used for pattern generator and optical path system Optical uniformity error between system and mobile platform is demarcated, and is included the following steps:
Structure further of the production for DMD exposure, which includes scale map and Quan Baitu;
Processing is exposed to structure further, obtains initial exposure figure;
Integration processing is carried out to initial exposure figure, obtains optical uniformity gray scale template;
It is realized using the optical uniformity gray scale template and launches arbitrary unit figure.
2. direct-write type lithography machine uniformity scaling method as described in claim 1, which is characterized in that it is described to structure further into Row exposure-processed obtains initial exposure figure, comprising:
Using region alignment method, the scale map described in the Quan Baitu weeks edge exposure, to identify the Quan Baitu;
The Quan Baitu identified is exposed according to exposure dose from low to high using the direct-write lithography machine, obtains difference The figure of energy exposure.
3. direct-write type lithography machine uniformity scaling method as claimed in claim 2, which is characterized in that described to initial exposure figure Shape carries out integration processing, obtains optical uniformity gray scale template, comprising:
The figure of the different-energy exposure is acquired using the CCD camera, and is identified in the figure of different-energy exposure The region that a certain exposure is opened;
Using the pixel in the region that a certain exposure of classifier classification shooting is opened, the color or gray scale of exposure figure are identified;
The figure of complete white figure and different-energy exposure is subjected to pixel matching mapping, obtains the Energy distribution of each region DMD;
According to the Energy distribution of each region DMD and gray scale linear ratio, the uniform gray level template is obtained.
4. direct-write type lithography machine optical uniformity scaling method as claimed in claim 3, which is characterized in that further include:
It carries out the optical uniformity gray scale template to negate processing in the X-axis direction, obtains negating treated image;
Correspondingly, it is realized using the image that negates that treated and launches arbitrary unit figure.
5. direct-write type lithography machine optical uniformity scaling method as described in claim 1, which is characterized in that the pattern generator The plane at place is parallel with the plane where the mobile platform.
6. a kind of direct-write type lithography machine optical uniformity calibration system, which is characterized in that including pattern generator, light path system, shifting Moving platform, CCD camera and central processing unit, pattern generator, light path system, mobile platform, CCD camera are and central processing Device connects, and the even wafer for having photosensitive material in surface is placed in the substrate of mobile platform, and central processing unit includes production module, exposes Optical module integrates module and loading module, in which:
Production module is used to make the structure further for DMD exposure, which includes scale map and Quan Baitu;
Exposure module obtains initial exposure figure for being exposed processing to structure further;
Module is integrated for carrying out integration processing to initial exposure figure, obtains optical uniformity gray scale template;
Loading module, which is used to realize using the optical uniformity gray scale template, launches arbitrary unit figure.
7. direct-write type lithography machine optical uniformity calibration system as claimed in claim 6, which is characterized in that the exposure module packet Include the first exposing unit and the second exposing unit;
First exposing unit is used to utilize region alignment method, the scale map described in the Quan Baitu weeks edge exposure, to identify State Quan Baitu;
Second exposing unit carries out the complete white figure identified according to exposure dose from low to high using the direct-write lithography machine Exposure obtains the figure of different-energy exposure.
8. direct-write type lithography machine optical uniformity calibration system as claimed in claim 7, which is characterized in that described to integrate module packet Include acquisition unit, gray scale linear ratio computing unit, Energy distribution computing unit and uniform gray level formwork calculation unit;
Acquisition unit acquires the figure of the different-energy exposure using the CCD camera, and in the figure of different-energy exposure In identify it is a certain exposure open region;
The pixel in the region that gray scale linear ratio computing unit is opened using a certain exposure of classifier classification shooting, identifies exposure diagram The color or gray scale of shape;
Energy distribution computing unit is used to the figure of actual graphical and different-energy exposure carrying out pixel matching mapping, obtains The Energy distribution of each region DMD;
Uniform gray level formwork calculation unit is used for Energy distribution and gray scale linear ratio according to each region DMD, obtains the ash Spend uniform template.
9. direct-write type lithography machine optical uniformity calibration system as claimed in claim 6, which is characterized in that the central processing mould Block further includes negating module, for carrying out the optical uniformity gray scale template to negate processing in the X-axis direction, obtains negating place Image after reason.
10. direct-write type lithography machine optical uniformity calibration system as claimed in claim 6, which is characterized in that the figure occurs The plane where the plane and the CCD camera where plane, the mobile platform where device is parallel to each other.
CN201811417241.0A 2018-11-26 2018-11-26 Method and system for calibrating light uniformity of direct-writing type photoetching machine Active CN109581824B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111367147A (en) * 2020-02-26 2020-07-03 合肥芯碁微电子装备股份有限公司 Method and device for controlling exposure of direct-writing photoetching machine and photoetching machine
CN112573206A (en) * 2019-09-29 2021-03-30 上海微电子装备(集团)股份有限公司 Workpiece conveying and positioning system and method
CN114518695A (en) * 2020-11-20 2022-05-20 苏州源卓光电科技有限公司 Correction method and exposure method of double-sided exposure system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060215127A1 (en) * 2005-03-23 2006-09-28 Infocus Corporation Projection systems and processes for generating images with increased brightness uniformity
CN101226343A (en) * 2008-01-29 2008-07-23 芯硕半导体(中国)有限公司 Method for improving photolithography exposure energy homogeneity using grey level compensation
CN101813893A (en) * 2010-04-07 2010-08-25 芯硕半导体(中国)有限公司 Method for calibrating exposure energy demand distribution by adopting exposure mode
KR20120100208A (en) * 2011-03-03 2012-09-12 삼성전자주식회사 Maskless exposure apparatus and method for compensating cumulative intensity of illumination using the same
CN105093855A (en) * 2015-09-09 2015-11-25 合肥芯碁微电子装备有限公司 Method for testing illumination uniformity of maskless lithography direct writing system
CN105652607A (en) * 2016-04-08 2016-06-08 长春长光天辰光电科技有限公司 Method for measuring and correcting light intensity nonuniformity of digital photoetching system
CN108073043A (en) * 2016-11-07 2018-05-25 俞庆平 A kind of optical uniformity compensation method of write-through screen printing system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060215127A1 (en) * 2005-03-23 2006-09-28 Infocus Corporation Projection systems and processes for generating images with increased brightness uniformity
CN101226343A (en) * 2008-01-29 2008-07-23 芯硕半导体(中国)有限公司 Method for improving photolithography exposure energy homogeneity using grey level compensation
CN101813893A (en) * 2010-04-07 2010-08-25 芯硕半导体(中国)有限公司 Method for calibrating exposure energy demand distribution by adopting exposure mode
KR20120100208A (en) * 2011-03-03 2012-09-12 삼성전자주식회사 Maskless exposure apparatus and method for compensating cumulative intensity of illumination using the same
CN105093855A (en) * 2015-09-09 2015-11-25 合肥芯碁微电子装备有限公司 Method for testing illumination uniformity of maskless lithography direct writing system
CN105652607A (en) * 2016-04-08 2016-06-08 长春长光天辰光电科技有限公司 Method for measuring and correcting light intensity nonuniformity of digital photoetching system
CN108073043A (en) * 2016-11-07 2018-05-25 俞庆平 A kind of optical uniformity compensation method of write-through screen printing system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112573206A (en) * 2019-09-29 2021-03-30 上海微电子装备(集团)股份有限公司 Workpiece conveying and positioning system and method
CN111367147A (en) * 2020-02-26 2020-07-03 合肥芯碁微电子装备股份有限公司 Method and device for controlling exposure of direct-writing photoetching machine and photoetching machine
CN111367147B (en) * 2020-02-26 2022-04-01 合肥芯碁微电子装备股份有限公司 Method and device for controlling exposure of direct-writing photoetching machine and photoetching machine
CN114518695A (en) * 2020-11-20 2022-05-20 苏州源卓光电科技有限公司 Correction method and exposure method of double-sided exposure system

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