CN109573939A - Bilayer strain matrix and stretchable electronic device - Google Patents
Bilayer strain matrix and stretchable electronic device Download PDFInfo
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- CN109573939A CN109573939A CN201811244775.8A CN201811244775A CN109573939A CN 109573939 A CN109573939 A CN 109573939A CN 201811244775 A CN201811244775 A CN 201811244775A CN 109573939 A CN109573939 A CN 109573939A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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Abstract
The invention discloses a kind of double-deck strain matrixes, comprising: the first base；The second base in first base is set；First base has the hardness greater than the second base；The surface of second base is wavy.The double-deck strain matrix provided in an embodiment of the present invention, by the way that biggish first base of hardness is arranged below the second wavy base of surface, both the stretchable characteristic of the second base had been maintained, integrally-built mechanical strength is improved again, solves the problems, such as that intensity existing for the existing mechanical system as single soft base layer as support is insufficient.
Description
Technical field
The present invention relates to field of biomedicine technology, and in particular to a kind of double-deck strain matrix and stretchable electronic device.
Background technique
By the way that brittle diaphragm is arranged on relatively thin elastic substrate, fragile material can be made to be changed into stretchable mechanical knot
Structure.But the mechanical system being made of single soft base layer and brittle diaphragm, usually there is the insufficient defect of mechanical strength, it is difficult
To meet the needs of practical application.It urgently researches and develops one kind and had not only kept stretchable characteristic, but also firm high-intensitive machinery can be provided
Structure.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of double-deck strain matrix and stretchable electronic device, it is existing to solve
Problem of some as single soft base layer as intensity deficiency existing for the mechanical system supported.
According in a first aspect, the embodiment of the invention provides a kind of double-deck strain matrixes, comprising: the first base；Setting exists
The second base in first base；First base has the hardness greater than second base；Second base
Surface it is wavy.
The double-deck strain matrix provided in an embodiment of the present invention is hard by being arranged below the second wavy base of surface
Biggish first base is spent, the stretchable characteristic of the second base had not only been maintained, but also improves integrally-built mechanical strength, is solved
The problem of intensity deficiency existing for the existing mechanical system as single soft base layer as support.
With reference to first aspect, in first aspect first embodiment, thickness and the surface of second base
The ratio between wavy wavelength is greater than or equal to 12.
The double-deck strain matrix provided in an embodiment of the present invention, due to by the wave of the thickness of the second base and its surface wave shape wave
It is the ratio between long to be set greater than or the constant equal to 12 so that two layers of base layer structure and only upper layer the knot that constitutes of the second base
Structure, it is essentially identical on wavelength and amplitude, illustrate that the function of two layers of basis material can decouple, the first base of lower layer is in material
Selection and design aspect, can individually carry out without influence device entirety tensility energy.Due to being located at the double-deck strain base
The wavelength and amplitude for the wavy shaped configuration that the second substrate surface above body generates are not influenced by the first base of lower layer, thus
First base of lower layer can choose firm protection materials perhaps water-permeable and air permeable material or the anti-chemical corrosion material of waterproof,
Or there is the material of comparable mechanical performance with human skin, to expand the function of the double-deck strain matrix, make the double-deck strain base
Body can satisfy the needs of different application.
With reference to first aspect or first aspect first embodiment, in first aspect second embodiment, described first
Base includes: flexible substrate and the network of fibers that is arranged in the flexible substrate；The network of fibers includes regularly arranged
Multiple topological structures pass through waveform microstructure brazing, the waveform micro-structure between each node of the topological structure
With predetermined width, and the wave crest or trough that constitute the waveform micro-structure are with default arc angle.
The double-deck strain matrix provided in an embodiment of the present invention, in the first base by the network of fibers of hard with it is soft soft
Property matrix combines, to construct Bionic flexible biological structure, to realize class skin, overcome existing flexible substrate, skin and
The existing unmatched defect with skin mechanical performance during stretching is organized, thus the first base can be greatlyd improve
And comfort level of double-deck the strain matrix and stretchable electronic device being made of the first base in donning process, while can be real
First base and the double-deck strain matrix being made of the first base and stretchable electronic device in present skin histology deformation process
Machinery it is stealthy.
Second embodiment with reference to first aspect, in first aspect third embodiment, the topological structure is triangle
Shape topological structure, each side for constituting the triangle topology structure is the waveform micro-structure.
The double-deck strain matrix provided in an embodiment of the present invention, constructs the fiber in the first base by triangle topology structure
Network, to make to be had by built-up the first base of Bionic flexible of the network of fibers of hard and soft flexible substrate and skin
The similar mechanical performance of skin is relaxed to solve wearing existing for existing biological integrated-optic device or stretchable electronic device
The lower problem of appropriateness.
Second embodiment with reference to first aspect, in the 4th embodiment of first aspect, the topological structure is honeycomb
Shape topological structure, each side of the honeycombed topological structure are the waveform micro-structure.
The double-deck strain matrix provided in an embodiment of the present invention, constructs the fiber in the first base by honeycombed topological structure
Network, to make to be had by built-up the first base of Bionic flexible of the network of fibers of hard and soft flexible substrate and skin
The similar mechanical performance of skin is relaxed to solve wearing existing for existing biological integrated-optic device or stretchable electronic device
The lower problem of appropriateness.
Second embodiment with reference to first aspect, in the 5th embodiment of first aspect, the topological structure is
Each side of Kagome topological structure, the Kagome topological structure is the waveform micro-structure, and each Kagome is opened up
It flutters between structure and is formed with interval.
The double-deck strain matrix provided in an embodiment of the present invention, constructs the fiber in the first base by Kagome topological structure
Network, to make to be had by built-up the first base of Bionic flexible of the network of fibers of hard and soft flexible substrate and skin
The similar mechanical performance of skin is relaxed to solve wearing existing for existing biological integrated-optic device or stretchable electronic device
The lower problem of appropriateness.
Second embodiment with reference to first aspect, in first aspect sixth embodiment, the topological structure is rectangular
Topological structure, each side of the square topologies structure are the waveform micro-structure.
The double-deck strain matrix provided in an embodiment of the present invention, constructs the web in the first base by square topologies structure
Network, to make to be had by built-up the first base of Bionic flexible of the network of fibers of hard and soft flexible substrate and skin
Similar mechanical performance, to solve wearing comfort existing for existing biological integrated-optic device or stretchable electronic device
Spend lower problem.
Second embodiment with reference to first aspect, in the 7th embodiment of first aspect, the topological structure is diamond shape
Each side of topological structure, the diamond shape topological structure is the waveform micro-structure, and between each diamond shape topological structure
It is formed with interval.
The double-deck strain matrix provided in an embodiment of the present invention, constructs the web in the first base by diamond shape topological structure
Network, to make to be had by built-up the first base of Bionic flexible of the network of fibers of hard and soft flexible substrate and skin
Similar mechanical performance, to solve wearing comfort existing for existing biological integrated-optic device or stretchable electronic device
Spend lower problem.
According to second aspect, the embodiment of the invention provides a kind of stretchable electronic devices, comprising: such as first aspect or
Bilayer described in any one embodiment of first aspect strains matrix.
Stretchable electronic device provided in an embodiment of the present invention, since times just like first aspect or first aspect is arranged
The strain matrix of bilayer described in a kind of embodiment of anticipating, so that the mechanical strength of the stretchable electronic device is enhanced.
In conjunction with second aspect, in second aspect first embodiment, the stretchable electronic device further include: setting
Sensor layer on the double-deck strain matrix.
Stretchable electronic device provided in an embodiment of the present invention is made by the way that sensor layer is arranged on bilayer strain matrix
Obtaining stretchable electronic device has Signals collecting function.
In conjunction with second aspect first embodiment, in second aspect second embodiment, the sensor layer is rigidity
The surface of film, the stiffness films is wavy, and is bonded with the second base in the double-deck strain matrix.
Stretchable electronic device provided in an embodiment of the present invention is thin by the way that sensor layer is designed as wavy rigidity
Film realizes the stretchable of sensor layer, in turn ensure the performance of sensor layer.Due to the undulated design of sensor layer,
So that sensor layer is able to use the high-performance electronic material containing fragile materials such as silicon and is made, compared to organic film flexible
Material, electric property significantly improve.
In conjunction with second aspect first embodiment, in second aspect third embodiment, the sensor layer is in island bridge
Structure, the island bridge structure include: the island structure being made of sensor and the metal bridge for connecting the island structure, the gold
Belong to the wavy configuration of bridge and is bonded with the second base in the double-deck strain matrix.
Stretchable electronic device provided in an embodiment of the present invention is realized by the way that sensor layer is designed as island bridge structure
Sensor layer it is stretchable, in turn ensure the performance of sensor layer.Since the island bridge structure of sensor layer designs, so that island
Structure is able to use the high-performance electronic material containing fragile materials such as silicon and is made, compared to organic film material flexible, electricity
Performance is learned to significantly improve.
It is described in the 4th embodiment of second aspect in conjunction with any embodiment of the second aspect first into third
Stretchable electronic device further include the soft encapsulated layer being arranged on the sensor layer.
Stretchable electronic device provided in an embodiment of the present invention, due to being provided with soft encapsulated layer, so that stretchable electronics device
Part is provided with waterproof, characteristics resistant to chemical etching and heat-resisting etc., to be conducive to the function of further promoting stretchable electronic device.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 shows the structural schematic diagram of a specific example of the double-deck strain matrix in the embodiment of the present invention；
Fig. 2 shows different Young's modulus than the wavelength of corresponding single base and the double-deck strain matrix when amplitude ratios
Change curve；
Fig. 3 show the corresponding single base of the ratio between the thickness of the second different bases and the wavy wavelength on its surface with
The change curve of the wavelength when amplitude ratio of bilayer strain matrix；
Fig. 4 shows the structure chart of biopolymer；
Fig. 5 shows the structural representation of a specific example of network of fibers in the first base in the embodiment of the present invention
Figure；
Fig. 6 shows the enlarged drawing of medium wave shape wave micro-structure of the embodiment of the present invention；
Fig. 7 shows the structural schematic diagram of the triangle topology structure in the embodiment of the present invention；
Fig. 8 shows the structural schematic diagram of the honeycombed topological structure in the embodiment of the present invention；
Fig. 9 shows the structural schematic diagram of the Kagome topological structure in the embodiment of the present invention；
Figure 10 shows the structural schematic diagram of the square topologies structure in the embodiment of the present invention；
Figure 11 shows the structural schematic diagram of the diamond shape topological structure in the embodiment of the present invention；
Figure 12 shows the stress-strain curve of the first base of different topology structure；
Figure 13 shows stress-strain curve of first base on the direction x and the direction y；
Figure 14 shows the different corresponding stress-strain curves of waveform micro-structure arc angle；
Figure 15 shows the different corresponding stress-strain curves of waveform microstructure width；
Figure 16 shows the different corresponding stress-strain curves of waveform micro-structure thickness；
Figure 17 shows the different corresponding tangent modulus change curves of waveform micro-structure thickness；
Figure 18 shows the load-deformation curve of the first base and its stress-of the human body real skin of corresponding position is answered
Varied curve；
Figure 19 shows the structural schematic diagram of a specific example of the stretchable electronic device in the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Fig. 1 is a kind of structural schematic diagram of double-deck strain matrix provided in an embodiment of the present invention, which strains matrix can
Base 1 and the second base 2 for being arranged in the first base 1 to include: first.Specifically, the first base 1, which has, is greater than the second base
The hardness of layer 2, and the surface of the second base 2 is wavy.The first base since the double-deck strain matrix underpart is arranged in has
Greater hardness improves integrally-built mechanical strength, solves so that the mechanical strength of the double-deck strain matrix is enhanced
The problem of intensity deficiency existing for the existing mechanical system as single soft base layer as support.Further, since being arranged double
The surface of second base on ply strain matrix top is wavy, so that the double-deck stretchable characteristic for straining the second base in matrix
Retained, so that the double-deck matrix that strains provided in an embodiment of the present invention is made to can be applied to the design of stretchable electronic device,
And it can make corresponding stretchable electronic device while keeping stretchable characteristic, there is stronger mechanical strength.
It can use prestrain, make the double-deck strain matrix provided in an embodiment of the present invention.Firstly, stiffness films are transferred
Onto the double-deck strain matrix of flat prestrain, specifically, the prestrain direction of the double-deck strain matrix is horizontal direction；Its
It is secondary, it discharges the prestrain of the double-deck strain matrix and the double-deck strain matrix is made to be restored to its original length, at this point, stiffness films and position
The second base in the double-deck strain matrix top is bent corrugate geometry, so that the double-deck strain matrix be made to be capable of providing effectively
The stretchable power of level.
The embodiment of the present invention passes through the machinery to the structure and the above-mentioned double-deck strain matrix that are separately formed by the second base
Performance evaluation, discovery is in the double-deck strain matrix provided in an embodiment of the present invention, when the thickness of the second base 2 and the wave on its surface
When the ratio between wavelength of shape wave is greater than or equal to 12, above-mentioned bilayer strains matrix compared with the structure being separately formed by the second base,
It is essentially identical on wavelength and amplitude, illustrate the function of two layers of basis material in the double-deck strain matrix provided in an embodiment of the present invention
It can decouple, selection and design aspect of the first base of lower layer in material, can individually carry out without influencing device entirety
Tensility energy.Specific Mechanical Property Analysis is as follows:
The elastic energy of the double-deck matrix can be acquired with boundary values.U is used firstiAnd wiIndicate the displacement in x and z directions, wherein
I=1,2 respectively represents the top layer and bottom of matrix.Equilibrium equation can be indicated with displacement:
Wherein, viIt is the Poisson's ratio of each basal layer.Z=0 is enabled to indicate the top surface of substrate.Position between film and matrix
The continuity of shifting needs
w1 | z=0=w0=Acos (kx)
Because of than two basal layers of film all much harders, the shearing at film/substrate interface be can be ignored,
Displacement and stress continuously require
Solve the elastic energy of the available double-deck matrix of equation
Wherein L0It is the length substrate under original unstretched state, L related with the film length L under original unstretched state
=L0(1+εpre)；It is the plane strain modulus of top substrate layer, further for incompressible matrix material
Expect v1=v2=0.5, g can be expressed as
Wherein r=Es1/Es2It is the ratio of the Young's modulus of top and bottom basal layer, η=2khsIt is a dimensionless group,
Indicate the ratio of the thickness of top substrate layer and the wavy wavelength of its surface formation.
The bending energy U of additional device filmbWith tensile energy Um
The gross energy of system can be written as Utotal=Ub+Um+Us, it is desirable that energy is minimumI.e.
The expression formula of wavelength and amplitude can be obtained
The available corresponding dimensionless wavelength of nondimensionalization and amplitude are carried out with the wavelength and amplitude of single layer collective
Dimensionless wavelength and amplitude are with upper and lower level Young's modulus ratio and thickness-wavelength ratio result of variations such as Fig. 2
Shown in 3.From the results, it was seen that working as η0When > 12, the wavelength and amplitude and the result of only upper layer of material of two layers matrix are basic
It is identical, illustrate that the function of two layers of basis material can decouple, the selection and design of underlying substrate material can individually carry out and
The tensility energy of device entirety is not influenced.In this way, underlying substrate material can use class skin, nonlinear bionical matrix
Design, to complete the matching in draw-texture process with skin mechanical property.
The composite material of hard and the soft structures composition found in biology provides spirit for building novel synthetic material
Sense.Fig. 4 is the structural schematic diagram of biopolymer.As shown in figure 4, the solid line for connecting each solid dot indicates the glue in biosystem
Former albumen and elastin laminin, these collagens and elastin laminin are filled in biological tissue, and biological tissue is made to have elasticity.It is logical
The structure of imitated biological tissue is crossed, flexible bionic object structure can be constructed, to realize the mechanicalness to skin or biological tissue
The simulation of energy, enables flexible bionic object structure and the Nonlinear extension performance of skin or biological tissue to match.
In order to enable the first base and the mechanical property of skin in the double-deck strain matrix provided in an embodiment of the present invention
Matching, so that the wearing comfort degree of the double-deck strain matrix and the stretchable electronic device by the double-deck strain matrix building is improved, it can
The first base to be designed as including flexible substrate and the structure of network of fibers being arranged in flexible substrate.In a specific implementation
In mode, by way of photoetching, the two-dimensional fiber network that polyimides long filament is constituted can be placed in flexible substrate, it is flexible
Matrix can select the matrix for having similar softness with skin.Fig. 5 is in the first base provided in an embodiment of the present invention
The structural schematic diagram of network of fibers.As shown in figure 5, the solid line for connecting each solid dot indicates that network of fibers, these networks of fibers are filled out
Fill in the first base, make the first base have and mechanical performance as skin.Network of fibers as shown in Figure 5 includes rule
Multiple topological structures of arrangement pass through waveform microstructure brazing between each node of each topological structure.Fig. 6 is to constitute this
The enlarged drawing of the waveform micro-structure for the network of fibers that inventive embodiments provide, as shown in fig. 6, the waveform micro-structure has in advance
If width w, and the wave crest or trough that constitute the waveform micro-structure are with default arc angle θ.
The composite construction of above-mentioned first base has and nonlinear characteristic as the skin of various positions.Herein, first
The route for introducing design composite construction, by being worn with improving the first base by the accurate matching of stress-strain behavior and skin
Comfort level during wearing.Collagen and elastin laminin in waveform micro-structure analogy biosystem, can uniquely determine
The engineering properties of adopted first base.Waveform micro-structure can be indicated that i.e. arc angle θ normalizes width w by three dimensionless groups
With normalization thickness t.
Mechanical assessment is carried out to the first base next, finite element modelling can be used.In a specific embodiment,
The topological structure of network of fibers can be triangle topology structure, honeycombed topological structure or Kagome topology knot in one base
Structure.Due to the sixfold symmetry of above topology structure, enable the network of fibers being made of above topology structure in small strain
Lower offer isotropic elasticity property.Shown in Fig. 7 to Fig. 9, respectively triangle topology structure, honeycombed topological structure or
The structural schematic diagram of Kagome topological structure.As shown in fig. 7, each side for constituting triangle topology structure is the micro- knot of waveform
Structure, the structure in dotted line frame are a triangle topology structure；As shown in figure 8, each side for constituting honeycombed topological structure is
Waveform micro-structure, the structure in dotted line frame are a honeycombed topological structure；As shown in figure 9, constituting Kagome topological structure
Each side be waveform micro-structure, and interval is formed between each Kagome topological structure, the structure in dotted line frame is one
Kagome topological structure.
In another specific embodiment, in the first base the topological structure of network of fibers can be square topologies structure or
Diamond shape topological structure, and anisotropic elasticity is capable of providing by the network of fibers that square topologies structure or diamond shape topological structure are constituted
Response.Shown in Figure 10 and Figure 11, the respectively structural schematic diagram of square topologies structure or diamond shape topological structure.As shown in Figure 10,
Each side for constituting square topologies structure is waveform micro-structure, and the structure in dotted line frame is a square topologies structure；Such as figure
Shown in 11, each side for constituting diamond shape topological structure is waveform micro-structure, and is formed with interval between each diamond shape topological structure,
Structure in dotted line frame is a diamond shape topological structure.
The relative density defined by the ratio between the mass density of network of fibers and mass density of respective flexible matrix, with wave
The approximately linear ratio of the width of shape micro-structure, as shown in formula (1) to formula (3):
Wherein,WithRespectively indicate triangle topology structure, honeycombed topological structure and
The relative density of Kagome topological structure；θ and w respectively indicates the arc angle and width for constituting the waveform micro-structure of each topological structure
Degree.
For given relative density (such as relative density), there is triangle topology structure, honeycombed topology
The load-deformation curve of first base of structure or Kagome topological structure is as shown in figure 12.In Figure 12, the expression of curve 91 has
The load-deformation curve of first base of triangle topology structure, curve 92 indicate first base with honeycombed topological structure
The load-deformation curve of layer, curve 93 indicate the load-deformation curve with the first base of Kagome topological structure.Wherein,
The first base with triangle topology structure shows strain limitation behavior the most outstanding.With triangle topology structure
The first base for, analyze other design parameters (such as arc angle, width and thickness of waveform micro-structure) to the first base
Mechanical performance influence.For the first base with triangle topology structure, the arc angle of waveform micro-structure therein is set
For 180 °, with a thickness of 0.15 μm, draw its load-deformation curve on the direction x and the direction y.As shown in figure 13, curve 101
Indicate the stress-strain of the first base with triangle topology structure being made of above-mentioned waveform micro-structure in the x direction
Curve, curve 102 indicate the first base with triangle topology structure being made of above-mentioned waveform micro-structure in y-direction
Load-deformation curve.As seen from Figure 13, for the stretching within 40%, the first base has isotropic feature, but
Under bigger strained tensile, the first base needs the anisotropy of appropriateness.
By taking the first base with triangle topology structure as an example, when waveform micro-structure therein has predetermined width
When (such as w=0.15 μm of width), the arc angle θ difference of waveform micro-structure can be such that the load-deformation curve of the first base occurs
Change, as shown in figure 14.In Figure 14, curve 111 indicates corresponding first base in arc angle θ=90 ° of waveform micro-structure
Load-deformation curve；Curve 112 indicates that the stress-strain of corresponding first base in arc angle θ=120 ° of waveform micro-structure is bent
Line；Curve 113 indicates the load-deformation curve of corresponding first base in arc angle θ=150 ° of waveform micro-structure；Curve 114
Indicate the load-deformation curve of corresponding first base in arc angle θ=180 ° of waveform micro-structure；Curve 115 indicates waveform
The load-deformation curve of corresponding first base in arc angle θ=200 ° of micro-structure.Still with first with triangle topology structure
For base, when waveform micro-structure therein has default radian (such as radian θ=180 °), the width of waveform micro-structure
Degree w difference can make the load-deformation curve of the first base change, as shown in figure 15.In Figure 15, curve 121 indicates wave
The load-deformation curve of corresponding first base of w=0.25 μm of width of shape wave micro-structure；Curve 122 indicates the micro- knot of waveform
The load-deformation curve of corresponding first base of w=0.20 μm of width of structure；The width w of the expression waveform micro-structure of curve 123
The load-deformation curve of=0.15 μm of corresponding first base；Curve 124 indicates w=0.10 μm of width of waveform micro-structure
The load-deformation curve of corresponding first base；Curve 125 indicates w=0.05 μm of width of waveform micro-structure corresponding the
The load-deformation curve of one base.The arc angle that Figure 14 to Figure 15 shows waveform micro-structure is controlled from undercut linear modulus to height
The transition (i.e. transition strain) of tangent modulus, and the width of waveform micro-structure defines the speed degree of the transient process.
The thickness t that Figure 16 show waveform micro-structure influences the mechanical performance of the first base.To be opened up with triangle
It flutters for the first base of structure, when waveform micro-structure therein has predetermined width and default arc angle (such as width w=
0.15 μm, arc angle θ=180 °) when, the thickness t difference of waveform micro-structure can be such that the load-deformation curve of the first base occurs
Change, as shown in figure 16.In Figure 16, curve 131 indicates t=80 μm of thickness corresponding first base of waveform micro-structure
Load-deformation curve；Curve 132 indicates that the stress-strain of t=55 μm of thickness corresponding first base of waveform micro-structure is bent
Line；Curve 133 indicates the load-deformation curve of t=20 μm of thickness corresponding first base of waveform micro-structure.Figure 16 is shown
The reduction of the thickness of waveform micro-structure will lead to the slope increase across the load-deformation curve for crossing strain, that is, waveform
The thickness of micro-structure enhances the speed degree of transition.Compared with the parameter of Figure 14 to Figure 15, the thickness pair of waveform micro-structure
The influence of first base is relatively small.The corresponding tangent modulus variation of thickness that Figure 17 show different waveform micro-structures is bent
Line.In Figure 17, curve 141 indicates t=80 μm of thickness corresponding tangent modulus change curve of waveform micro-structure；Curve
142 indicate t=55 μm of thickness corresponding tangent modulus change curve of waveform micro-structure；Curve 143 indicates the micro- knot of waveform
The corresponding tangent modulus change curve of t=20 μm of thickness of structure.Figure 17 shows the increase with strain, tangent modulus slowly increases
Add, then sharply increase, until strain stresspeakThe maximum value reached when ≈ 60%, reduces later.In the first base, for appointing
What given network of fibers, there are critical thickness, are lower than the critical thickness, are stretched to peak value ε in the first basepeakWhen will occur
Buckling.
In a specific embodiment, use the thin elastomer (about 100 μ m-thick) of flexible, breathable as flexible substrate, will lead to
It crosses the network of fibers (about 20 μm~50 μ m-thicks) that the prepared polyimides of the modes such as laser cutting or photoetching is constituted and is embedded in it
In, so that the first base be made, which can accurately be reproduced in answering for true man's skin at the different zones of body
Force-strain curve.In a specific embodiment, human body back is simulated using the first base with triangle topology structure
Locate the mechanical performance (in the load-deformation curve such as Figure 18 of human body back somewhere skin shown in curve 151 ') of skin, setting should
W=0.15 μm of the width of first base's medium wave shape wave micro-structure, arc angle θ=110 °, R=400 μm of radius, stress-strain are bent
Line is as shown in curve 151 in Figure 18；Another place's skin of human body back is simulated using the first base with triangle topology structure
Mechanical performance (in the load-deformation curve such as Figure 18 of another place's skin of human body back curve 152 ' shown in), set this first
W=0.11 μm of the width of base's medium wave shape wave micro-structure, arc angle θ=150 °, R=400 μm of radius, load-deformation curve is such as
In Figure 18 shown in curve 152；Use the machinery of the first base simulation human abdomen somewhere skin with triangle topology structure
Performance (in the load-deformation curve such as Figure 18 of human abdomen somewhere skin shown in curve 153 '), sets the first base medium wave
It is bent in w=0.12 μm of the width of shape wave micro-structure, arc angle θ=200 °, R=400 μm of radius, load-deformation curve such as Figure 18
Shown in line 153.The human body that the load-deformation curve that Figure 18 shows the first base of above three distinguishes corresponding position is true
The load-deformation curve of skin matches, to confirm that the first base provided in an embodiment of the present invention has and skin or life
The similar mechanical performance of object tissue.
First base provided in an embodiment of the present invention combines the network of fibers of hard with soft flexible substrate, from
And Bionic flexible biological structure is constructed, to realize class skin, overcome existing flexible substrate, skin and tissue during stretching
The existing unmatched defect with skin mechanical performance, thus the first base can be greatlyd improve and be made of the first base
Comfort level of the biological integrated-optic device in donning process, while the first base in skin histology deformation process may be implemented
The machinery of layer and the double-deck strain matrix and stretchable electronic device is stealthy.
The embodiment of the present invention also provides a kind of stretchable electronic device, and as shown in figure 19, which includes
Any double-deck strain matrix 3 in above-described embodiment, and sensor layer 4 can also be set on bilayer strain matrix 3
And/or soft encapsulated layer 5.Due to being provided with soft encapsulated layer 5 so that stretchable electronic device be provided with waterproof, it is resistant to chemical etching and
The characteristics such as heat-resisting, to be conducive to the function of further promoting stretchable electronic device.
In a specific embodiment, sensor layer 4 can be stiffness films, and the surface of the stiffness films is wavy,
And it is bonded with the second base in the double-deck strain matrix 3.In another specific embodiment, sensor layer 4 is in island bridge structure, should
Island bridge structure includes: the metal bridge of the island structure being made of sensor and connection island structure, the wavy configuration of metal bridge
And it is bonded with the second base in the double-deck strain matrix 3.By the way that sensor layer 4 is designed as waveform or island bridge structure, i.e., in fact
Show the stretchable of sensor layer 4, in turn ensures the electric property of sensor layer 4.Due to the waveform or island bridge of sensor layer 4
Structure design so that constitute waveform sensor layer stiffness films or the island structure in the bridge structure of island, be able to use containing
The high-performance electronic material of the fragile materials such as silicon is made, and compared to organic film material flexible, electric property is significantly improved.
Although being described in conjunction with the accompanying the embodiment of the present invention, those skilled in the art can not depart from the present invention
Spirit and scope in the case where various modifications and variations can be made, such modifications and variations are each fallen within by appended claims institute
Within the scope of restriction.
Claims (13)
1. a kind of double-deck strain matrix characterized by comprising
First base；
The second base in first base is set；First base has the hardness greater than second base；Institute
The surface for stating the second base is wavy.
2. the double-deck strain matrix according to claim 1, which is characterized in that the thickness of second base and the surface
The ratio between wavy wavelength be greater than or equal to 12.
3. the double-deck strain matrix according to claim 1 or 2, which is characterized in that first base includes: flexible substrate
With the network of fibers being arranged in the flexible substrate；
The network of fibers includes regularly arranged multiple topological structures, passes through wave between each node of the topological structure
Shape microstructure brazing, the waveform micro-structure has predetermined width, and constitutes the wave crest or trough of the waveform micro-structure
With default arc angle.
4. the double-deck strain matrix according to claim 3, which is characterized in that the topological structure is triangle topology knot
Structure, each side for constituting the triangle topology structure is the waveform micro-structure.
5. the double-deck strain matrix according to claim 3, which is characterized in that the topological structure is honeycombed topology knot
Structure, each side of the honeycombed topological structure are the waveform micro-structure.
6. the double-deck strain matrix according to claim 3, which is characterized in that the topological structure is Kagome topology knot
Structure, each side of the Kagome topological structure are the waveform micro-structure, and shape between each Kagome topological structure
At there is interval.
7. the double-deck strain matrix according to claim 3, which is characterized in that the topological structure is square topologies structure,
Each side of the square topologies structure is the waveform micro-structure.
8. the double-deck strain matrix according to claim 3, which is characterized in that the topological structure is diamond shape topological structure,
Each side of the diamond shape topological structure is the waveform micro-structure, and between being formed between each diamond shape topological structure
Every.
9. a kind of stretchable electronic device characterized by comprising such as the double-deck strain of any of claims 1-8
Matrix.
10. stretchable electronic device according to claim 9, which is characterized in that further include: setting is in the double-deck strain
Sensor layer on matrix.
11. stretchable electronic device according to claim 10, which is characterized in that the sensor layer is stiffness films,
The surface of the stiffness films is wavy, and is bonded with the second base in the double-deck strain matrix.
12. stretchable electronic device according to claim 10, which is characterized in that the sensor layer is in island bridge structure,
The island bridge structure includes: the island structure being made of sensor and the metal bridge for connecting the island structure, the metal bridge
It wavy configuration and is bonded with the second base in the double-deck strain matrix.
13. stretchable electronic device described in any one of 0 to 12 according to claim 1, which is characterized in that further include setting
Soft encapsulated layer on the sensor layer.
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