CN109560458A - Semiconductor laser spectrum beam combination frequency doubling device - Google Patents
Semiconductor laser spectrum beam combination frequency doubling device Download PDFInfo
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- CN109560458A CN109560458A CN201910117306.8A CN201910117306A CN109560458A CN 109560458 A CN109560458 A CN 109560458A CN 201910117306 A CN201910117306 A CN 201910117306A CN 109560458 A CN109560458 A CN 109560458A
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 41
- 238000002310 reflectometry Methods 0.000 claims description 12
- 238000007493 shaping process Methods 0.000 claims description 11
- 238000004020 luminiscence type Methods 0.000 claims description 10
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- 238000000576 coating method Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000003079 width control Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000004446 light reflex Effects 0.000 description 1
- HZRMTWQRDMYLNW-UHFFFAOYSA-N lithium metaborate Chemical compound [Li+].[O-]B=O HZRMTWQRDMYLNW-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
- H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application provides a kind of semiconductor laser spectrum beam combination frequency doubling device, is related to laser equipment field.The semiconductor laser spectrum beam combination frequency doubling device includes the semiconductor laser being arranged successively, transform lens, diffraction grating, frequency-doubling crystal and output coupling mirror, semiconductor laser is located at the front focal plane of transform lens, the center of diffraction grating is overlapped with the rear focus of transform lens, the transformed lens focus of Multichannel Parallel light beam that semiconductor laser issues is coupled as combined beam light output to diffraction grating, and through diffraction grating；Output coupling mirror reflects fundamental frequency light and anti-reflection frequency doubled light, is exported through frequency-doubling crystal frequency multiplication and by the combined beam light that diffraction grating exports through output coupling mirror.The application realizes spectrum beam combination by diffraction grating, improve output power and brightness, and in frequency-doubling crystal laser power density and transfer efficiency, and fundamental frequency light and anti-reflection frequency doubled light are reflected by output coupling mirror, obtain high power and the output of efficient laser freuqency doubling.
Description
Technical field
This application involves laser equipment fields, specifically, being related to a kind of semiconductor laser spectrum beam combination frequency doubling device.
Background technique
Semiconductor laser has at low cost, and the service life is long, small in size, high reliability, in industrial processes, pumping,
Medical treatment, communication etc. all have wide practical use.Can the brightness that semiconductor laser be further increased be to restrict partly to lead
One key factor of body laser future development.The brightness of laser beam determines by the size and beam quality of output power,
Power is bigger, and beam quality is better, and brightness is higher, and the application field of semiconductor laser is also more extensive.In addition, for one
The semiconductor laser of a little specific wavelengths, output power is limited and price is very high；And due to current semiconductor technology
Limitation, such as the semiconductor laser of the ultraviolet short wavelength of wavelength 532nm or some have not been achievable.Therefore, laser two is utilized
Pole pipe closes Shu Tigao power and power density, then pairing Shu Jiguang carries out frequency multiplication and obtain double-frequency laser to be a kind of ideal chose.
Closing beam technology is the current conventional means for realizing high brightness semiconductor laser, and conventional beam technology of closing includes that polarization closes
Beam, wavelength coupling and optical-fiber bundling etc..Polarization coupling by polarization related device by two polarization directions it is photosynthetic be it is a branch of, it is bright
Degree can only be increased to twice, generally cooperated other to close beam technology and used；Wavelength coupling is limited by coating technique, combined beam unit
Number is usually no more than 5, also limited to the raising of power and brightness；There is limitation, multiple laser to the NA of laser in optical-fiber bundling
There is certain loss during efficiency and fiber coupling can be reduced in conjunction beam.
For laser freuqency doubling, the output power of frequency doubled light is related to the power of fundamental frequency light, beam quality.Semiconductor is swashed
The frequency multiplication of light device, how to improve semiconductor laser power and its beam quality becomes the key factor for obtaining more high frequency doubling efficiency.
It should be noted that information is only used for reinforcing the reason to the background of the application disclosed in above-mentioned background technology part
Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
In view of this, the application provides a kind of semiconductor laser spectrum beam combination frequency doubling device, by spectrum beam combination technology with
Frequency doubling technology combines, and obtains high power and the output of efficient laser freuqency doubling.
According to the one aspect of the application, a kind of semiconductor laser spectrum beam combination frequency doubling device is provided, including along light beam
The direction of propagation is arranged successively saturating for issuing the semiconductor laser of Multichannel Parallel light beam, the transformation for focusing each road light beam
Mirror, the diffraction grating for coupling each road light beam, the semiconductor laser is located at the front focal plane of the transform lens, described to spread out
The center for penetrating grating is overlapped with the rear focus of the transform lens, and the Multichannel Parallel light beam that the semiconductor laser issues is through institute
It states transform lens and focuses to the diffraction grating, and be coupled as combined beam light output through the diffraction grating；And frequency-doubling crystal and
Output coupling mirror, the frequency-doubling crystal are located on the output light path of the diffraction grating, and the output coupling mirror is located at described times
On the output light path of frequency crystal, the output coupling mirror reflects fundamental frequency light and anti-reflection frequency doubled light, and the combined beam light is through the frequency multiplication
Crystal double frequency is simultaneously exported through the output coupling mirror.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, along direction of beam propagation, the output coupling
The front surface for closing mirror is coated with fundamental frequency optical reflection film and frequency doubled light anti-reflection film, and rear surface is coated with frequency doubled light anti-reflection film；The fundamental frequency light
The reflectivity of reflectance coating is 5%~30%, and the transmissivity of the frequency doubled light anti-reflection film is greater than 99%.
Preferably, above-mentioned semiconductor laser spectrum beam combination frequency doubling device further include: the first lens are located at the diffraction
Between grating and the frequency-doubling crystal, first lens are used to the combined beam light focusing to the frequency-doubling crystal；And/or the
Two lens, between the frequency-doubling crystal and the output coupling mirror, second lens are for collimating the frequency-doubling crystal
The frequency multiplication light beam and basic frequency beam of output, and the basic frequency beam that the output coupling mirror reflects is focused into the frequency-doubling crystal.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, first lens be non-spherical lens,
Spherical lens or gradual index lens；Second lens are non-spherical lens, spherical lens or gradual index lens.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, along direction of beam propagation, the frequency multiplication is brilliant
The front surface of body is coated with fundamental frequency light anti-reflection film and frequency doubled light high-reflecting film, and rear surface is coated with fundamental frequency light anti-reflection film and frequency doubled light is anti-reflection
Film；The transmissivity of the fundamental frequency light anti-reflection film is greater than 99%, and the reflectivity of the frequency doubled light high-reflecting film is greater than 99%, the frequency multiplication
The transmissivity of light anti-reflection film is greater than 99%.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the frequency-doubling crystal is the non-linear crystalline substance of KTP
Body, LBO nonlinear crystal or BBO nonlinear crystal；Or the frequency-doubling crystal is PPLN periodic crystal or PPKTP period
Property crystal.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the diffraction grating is transmission-type grating
Or reflective gratings, and the diffraction grating is greater than 90% in the diffraction efficiency of 1 grade or -1 level.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the action direction of the transform lens is
Slow axis, the transform lens are selected from: single spherical surface cylindrical lens, the lens group of multiple spherical surface cylindrical lens composition, single aspherical column
The lens group of lens or multiple aspheric designs composition.
Preferably, above-mentioned semiconductor laser spectrum beam combination frequency doubling device further include: beam shaping element is located at described
Between semiconductor laser and the transform lens, the beam shaping element is used to collimate what the semiconductor laser issued
Multichannel Parallel light beam；The beam shaping element is selected from: fast axis collimation mirror, fast axis collimation mirror and slow axis collimating mirror combination or
The combination of fast axis collimation mirror and 45 ° of batter post lens arrays.
Preferably, in above-mentioned semiconductor laser spectrum beam combination frequency doubling device, the front end face of the semiconductor laser
For reflectivity less than 1%, rear facet reflectivity is greater than 95%；The semiconductor laser is selected from: what is arranged in the horizontal direction is multiple
Semiconductor laser single tube, the multiple luminescence units arranged in the horizontal direction formed semiconductor laser array, along level side
To multiple semiconductor laser arrays of arrangement, along the vertical direction multiple semiconductor laser single tubes, along the vertical direction for arranging
The semiconductor laser array or the multiple semiconductor laser battle arrays arranged along the vertical direction that multiple luminescence units of arrangement are formed
Column.
The beneficial effect of the application compared with prior art is:
The spectrum beam combination that the multichannel light beam of noise spectra of semiconductor lasers output is realized by diffraction grating, improves semiconductor laser
The output power of device and brightness, and enter the power density of laser in frequency-doubling crystal；
Fundamental frequency light and anti-reflection frequency doubled light are reflected by output coupling mirror, most of fundamental frequency light is made to obtain frequency multiplication, improves frequency multiplication
The transfer efficiency of crystal, to obtain high power and the output of efficient laser freuqency doubling.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
The application can be limited.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application
Example, and together with specification it is used to explain the principle of the application.It should be evident that the accompanying drawings in the following description is only the application
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows the schematic diagram of the first semiconductor laser spectrum beam combination frequency doubling device in the embodiment of the present application；
Fig. 2 shows the schematic diagrames of second of semiconductor laser spectrum beam combination frequency doubling device in the embodiment of the present application；
Fig. 3 shows the schematic diagram of the third semiconductor laser spectrum beam combination frequency doubling device in the embodiment of the present application.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein.On the contrary, thesing embodiments are provided so that the application will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.It is identical attached in figure
Icon note indicates same or similar structure, thus will omit repetition thereof.
Fig. 1 to Fig. 3 shows the schematic diagram of three kinds of semiconductor laser spectrum beam combination frequency doubling devices in embodiment.In conjunction with Fig. 1
To shown in Fig. 3, in some embodiments of the present application, semiconductor laser spectrum beam combination frequency doubling device includes:
It is used to issue the semiconductor laser 1 of Multichannel Parallel light beam, for focusing along what direction of beam propagation was arranged successively
The transform lens 3 of each road light beam, the diffraction grating 4 for coupling each road light beam, semiconductor laser 1 are located at transform lens 3
Front focal plane, the center of diffraction grating 4 are overlapped with the rear focus of transform lens 3, the Multichannel Parallel light beam that semiconductor laser 1 issues
Transformed lens 3 focus to diffraction grating 4, and are coupled as combined beam light output through diffraction grating 4；And
Frequency-doubling crystal 6 and output coupling mirror 8, frequency-doubling crystal 6 are located on the output light path of diffraction grating 4, output coupling mirror 8
On the output light path of frequency-doubling crystal 6, output coupling mirror 8 reflects fundamental frequency light and anti-reflection frequency doubled light, and combined beam light is through frequency-doubling crystal
6 frequencys multiplication are simultaneously exported through output coupling mirror 8.
Above-mentioned semiconductor laser spectrum beam combination frequency doubling device makes spectrum width control exist by 4 compressed spectrum of diffraction grating
In the gain ranging of semiconductor gain media and the high efficiency range of diffraction of diffraction grating 4, realize that noise spectra of semiconductor lasers 1 exports
Multichannel light beam spectrum beam combination, improve laser output power and brightness；The diffraction for having benefited from diffraction grating 4 closes Shu Zuoyong, energy
It is enough that more combined beam units are added in certain gain bandwidth, spectrum beam combination power and brightness are improved, and close Shu Houwei single mode
Laser makes frequency-doubling crystal 6 obtain high-power combined beam light, to generate high-power double-frequency laser.It is anti-by output coupling mirror 8
Fundamental frequency light and anti-reflection frequency doubled light are penetrated, so that most of fundamental frequency light is returned to frequency-doubling crystal 6 and obtains frequency multiplication, improve the conversion of frequency-doubling crystal 6
Efficiency, to obtain high power and the output of efficient laser freuqency doubling.
Wherein, spectrum beam combination is a kind of novel semiconductor laser conjunction beam technology, passes through external cavity feedback effect and diffraction light
Each luminescence unit of semiconductor laser 1 is locked in different wavelength by the dispersion interaction of grid 4, to obtain identical diffraction
Angle, which is realized, closes beam.The advantages of spectrum beam combination, is: first, each road of semiconductor laser 1 is exported combiner, realizing power
Superposition, while beam quality is able to maintain as the high light beam quality of single luminescence unit, greatly improves semiconductor laser 1
Brightness；Second, multiple luminescence units, which can share, closes beam element, combined beam unit quantity is not limited, cost can be greatly reduced,
There is bigger advantage in high power semiconductor lasers field when applying.
Further, in a preferred embodiment, along direction of beam propagation, the front surface 8a of output coupling mirror 8 is coated with base
Frequency optical reflection film and frequency doubled light anti-reflection film, rear surface 8b are coated with frequency doubled light anti-reflection film.The reflectivity of fundamental frequency optical reflection film is about 5%
~30%, the transmissivity of frequency doubled light anti-reflection film is greater than 99%.The fundamental frequency optical reflection film and frequency doubled light for having benefited from front surface 8a plating increase
Permeable membrane and the frequency doubled light anti-reflection film of rear surface 8b plating, the frequency doubled light after 6 frequency multiplication of frequency-doubling crystal are defeated by output coupling mirror 8
Out, fundamental frequency light reflexes to the frequency multiplication again of frequency-doubling crystal 6, to improve the transfer efficiency of fundamental frequency light, obtains most of fundamental frequency light again
Frequently, efficient laser freuqency doubling output is obtained.
It is further preferred that in some embodiments, semiconductor laser spectrum beam combination frequency doubling device further include: first thoroughly
Mirror 5, between diffraction grating 4 and frequency-doubling crystal 6, the first lens 5 are used to focus to the combined beam light that diffraction grating 4 exports again
Frequency crystal 6.Combined beam light passes through the focusing of the first lens 5, into having higher power density in frequency-doubling crystal 6, while also can
Improve the transfer efficiency of frequency-doubling crystal 6.Second lens 7, between frequency-doubling crystal 6 and output coupling mirror 8, the second lens 7 are used
It is focused in frequency multiplication light beam and basic frequency beam that collimation frequency-doubling crystal 6 exports, and by the basic frequency beam that output coupling mirror 8 reflects
Frequency-doubling crystal 6.By the focusing of the second lens 7, the frequency multiplication light beam vertical incidence that frequency-doubling crystal 6 exports to output coupling mirror 8 simultaneously
Output, the basic frequency beam reflected by output coupling mirror 8 focuses again enters frequency-doubling crystal 6, improves the function of laser in frequency-doubling crystal 6
Rate density and transfer efficiency.First lens 5 and the second lens 7 can be selected from non-spherical lens, spherical lens or graded index
Lens.
Further, in some embodiments, along direction of beam propagation, the front surface 6a of frequency-doubling crystal 6 is coated with fundamental frequency light
Anti-reflection film and frequency doubled light high-reflecting film, rear surface 6b are coated with fundamental frequency light anti-reflection film and frequency doubled light anti-reflection film.Fundamental frequency light anti-reflection film it is saturating
Rate is penetrated greater than 99%, the reflectivity of frequency doubled light high-reflecting film is greater than 99%, and the transmissivity of frequency doubled light anti-reflection film is greater than 99%.Have benefited from
The fundamental frequency light anti-reflection film and frequency doubled light high-reflecting film of front surface 6a plating and the fundamental frequency light anti-reflection film and frequency doubled light of rear surface 6b plating increase
Permeable membrane, frequency-doubling crystal 6 are capable of the fundamental frequency light of high efficiency reception diffraction grating 4 basic frequency beam exported and the reflection of output coupling mirror 8
Beam makes basic frequency beam obtain frequency multiplication in frequency-doubling crystal 6, and high efficiency exports, to improve the shg efficiency of frequency-doubling crystal 6.
Frequency-doubling crystal 6 can be nonlinear crystal, such as KTP (potassium titanyl phosphate), LBO (lithium metaborate), BBO (metaboric acid
Barium) etc. nonlinear crystals.It is also possible to periodic crystal, as PPLN (periodic polarized lithium niobate), PPKTP are (periodic polarized
Potassium titanyl phosphate) quasi-periodic crystal, periodic structure crystal has higher nonlinear factor, can obtain higher frequency multiplication effect
Rate.
Diffraction grating 4 can be transmission-type grating or reflective gratings, and diffraction grating 4 is in 1 grade or the diffraction of -1 level
Efficiency is greater than 90%.Fig. 1 and diffraction grating shown in Fig. 34 are transmission-type grating, and diffraction grating 4 shown in Fig. 2 is reflecting light
Grid.Either transmission-type grating or reflective gratings are all larger than 90% in the diffraction efficiency of 1 grade or -1 level, make partly to lead
The transformed lens 3 of each road light beam that body laser 1 issues converge after on diffraction grating 4 position having the same and the angle of diffraction,
It realizes and closes beam.As described above, having benefited from the diffraction of diffraction grating 4, the output beam of semiconductor laser 1 can be reasonable
Increase according to actual needs in range, to improve laser intensity.In some embodiments, semiconductor laser 1 can be selected from: edge
The semiconductor that multiple semiconductor laser single tubes of horizontal direction arrangement, the multiple luminescence units arranged in the horizontal direction are formed swashs
Light device array, the multiple semiconductor laser arrays arranged in the horizontal direction, the multiple semiconductor lasers arranged along the vertical direction
The semiconductor laser array or arrange along the vertical direction that device single tube, multiple luminescence units for arranging along the vertical direction are formed
Multiple semiconductor laser arrays.The number of semiconductor laser 1 and its luminescence unit can increase according to actual needs, increase and close
Laser intensity can be improved in the quantity of Shu Danyuan.
Wherein, horizontal direction and vertical direction are perpendicular, and the light beam output perpendicular to semiconductor laser 1 is collectively formed
The optical axis of the plane in direction, each road light beam that semiconductor laser 1 exports is parallel to each other.In a preferred embodiment, semiconductor
For the front end face 1a reflectivity of laser 1 less than 1%, rear facet 1b reflectivity is greater than 95%.
Further, in a preferred embodiment, semiconductor laser spectrum beam combination frequency doubling device further include: beam shaping
Element 2, between semiconductor laser 1 and transform lens 3, beam shaping element 2 is for collimating the sending of semiconductor laser 1
Multichannel Parallel light beam, so that transform lens 3 is obtained better focusing effect.Beam shaping element 2 can be selected from: fast axis collimation
Mirror, the combination of fast axis collimation mirror and slow axis collimating mirror or the combination of fast axis collimation mirror and 45 ° of batter post lens arrays.Transform lens 3
Action direction be slow axis, transform lens 3 can be selected from: single spherical surface cylindrical lens, the lens group of multiple spherical surface cylindrical lens composition,
The lens group of single aspheric design or multiple aspheric designs composition.Wherein, the corresponding half of a beam shaping element 2
Conductor laser 1, entire semiconductor laser spectrum beam combination frequency doubling device shares a transform lens 3 and a diffraction grating 4, to subtract
The volume of small semiconductor laser spectrum beam combination frequency doubling device.
The semiconductor laser spectrum beam combination frequency doubling device of the various embodiments described above description realizes that laser spectrum closes beam and frequency multiplication
Process include: by semiconductor laser 1 issue in Multichannel Parallel light beam of 1 inner cavity of semiconductor laser through vibrating through light beam
Shaping element 2 is incident to transform lens 3 after collimating.Each road light beam is focused to diffraction grating 4, diffraction light by transform lens 3 respectively
Grid 4 are set to the rear focal point of transform lens 3, and the road Shi Ge light beam position having the same and angle of diffraction on diffraction grating 4 are realized
Close beam.Realize spectrum width control in the gain ranging and diffraction grating 4 of semiconductor gain media by diffraction grating 4 compressed spectrum
In high efficiency range of diffraction, the spectrum beam combination for the multichannel light beam that noise spectra of semiconductor lasers 1 exports is realized, improve laser output power
And brightness.Close beam after laser by the first lens 5 focus enter frequency-doubling crystal 6, improve frequency-doubling crystal 6 in power density and
Shg efficiency.Frequency-doubling crystal 6 carries out frequency multiplication to laser, the frequency doubled light of wavelength needed for obtaining.Double-frequency laser through frequency-doubling crystal 6 and
Fundamental frequency light collimates vertical incidence to output coupling mirror 8 by the second lens 7.Output coupling mirror 8 passes through anti-reflection frequency doubled light and reflection
Fundamental frequency light, the laser output for making acquisition frequency multiplication, the laser for not obtaining frequency multiplication return to the frequency multiplication again of frequency-doubling crystal 6, it is brilliant to improve frequency multiplication
The transfer efficiency of body 6.Wherein, detailed acquisition high power and the process of High efficiency laser frequency doubling output can refer to above-mentioned each reality
The description of example is applied, details are not described herein again.
To sum up, the application realizes spectrum beam combination by diffraction grating 4, improves the output power of semiconductor laser 1 and bright
Degree, and enter the power density of laser in frequency-doubling crystal 6；Times of frequency-doubling crystal 6 is improved by the first lens 5 and the second lens 7
Frequency efficiency；Fundamental frequency light and anti-reflection frequency doubled light are reflected by output coupling mirror 8, most of fundamental frequency light is made to obtain frequency multiplication, improves frequency multiplication
The transfer efficiency of crystal 6, to obtain high power and the output of efficient laser freuqency doubling.
The above content is combine specific preferred embodiment to made by the application further description, and it cannot be said that
The specific implementation of the application is only limited to these instructions.For those of ordinary skill in the art to which this application belongs, exist
Under the premise of not departing from the application design, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the application's
Protection scope.
Claims (10)
1. a kind of semiconductor laser spectrum beam combination frequency doubling device, which is characterized in that including being arranged successively along direction of beam propagation
For issuing the semiconductor laser of Multichannel Parallel light beam, the transform lens for focusing each road light beam, for coupling each road
The diffraction grating of light beam,
The semiconductor laser is located at the front focal plane of the transform lens, the center of the diffraction grating and the transform lens
Rear focus be overlapped, the Multichannel Parallel light beam that the semiconductor laser issues focuses to the diffraction light through the transform lens
Grid, and combined beam light output is coupled as through the diffraction grating；And
Frequency-doubling crystal and output coupling mirror, the frequency-doubling crystal are located on the output light path of the diffraction grating, the output coupling
It closes mirror to be located on the output light path of the frequency-doubling crystal, the output coupling mirror reflects fundamental frequency light and anti-reflection frequency doubled light, the conjunction
Frequency-doubling crystal frequency multiplication described in Shu Guangjing is simultaneously exported through the output coupling mirror.
2. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that along beam propagation side
To the front surface of the output coupling mirror is coated with fundamental frequency optical reflection film and frequency doubled light anti-reflection film, and it is anti-reflection that rear surface is coated with frequency doubled light
Film；
The reflectivity of the fundamental frequency optical reflection film is 5%~30%, and the transmissivity of the frequency doubled light anti-reflection film is greater than 99%.
3. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that further include:
First lens, between the diffraction grating and the frequency-doubling crystal, first lens are used for the combined beam light
Focus to the frequency-doubling crystal；
Second lens, between the frequency-doubling crystal and the output coupling mirror, second lens are for collimating described times
The frequency multiplication light beam and basic frequency beam of frequency crystal output, and the basic frequency beam that the output coupling mirror reflects is focused into the frequency multiplication
Crystal.
4. semiconductor laser spectrum beam combination frequency doubling device as claimed in claim 3, which is characterized in that first lens are
Non-spherical lens, spherical lens or gradual index lens；
Second lens are non-spherical lens, spherical lens or gradual index lens.
5. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that along beam propagation side
To the front surface of the frequency-doubling crystal is coated with fundamental frequency light anti-reflection film and frequency doubled light high-reflecting film, and rear surface is coated with fundamental frequency light anti-reflection film
With frequency doubled light anti-reflection film；
The transmissivity of the fundamental frequency light anti-reflection film is greater than 99%, and the reflectivity of the frequency doubled light high-reflecting film is greater than 99%, described times
The transmissivity of frequency light anti-reflection film is greater than 99%.
6. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that the frequency-doubling crystal is
KTP nonlinear crystal, LBO nonlinear crystal or BBO nonlinear crystal；Or
The frequency-doubling crystal is PPLN periodic crystal or PPKTP periodic crystal.
7. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that the diffraction grating is
Transmission-type grating or reflective gratings, and the diffraction grating is greater than 90% in the diffraction efficiency of 1 grade or -1 level.
8. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that the transform lens
Action direction is slow axis, and the transform lens are selected from:
Lens group, single aspheric design or the multiple aspherical columns of single spherical surface cylindrical lens, multiple spherical surface cylindrical lens composition
The lens group of lens composition.
9. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that further include:
Beam shaping element, between the semiconductor laser and the transform lens, the beam shaping element is used for
Collimate the Multichannel Parallel light beam that the semiconductor laser issues；
The beam shaping element is selected from: fast axis collimation mirror, the combination of fast axis collimation mirror and slow axis collimating mirror or fast axis collimation mirror
With the combination of 45 ° of batter post lens arrays.
10. semiconductor laser spectrum beam combination frequency doubling device as described in claim 1, which is characterized in that the semiconductor swashs
For the front facet reflectivity of light device less than 1%, rear facet reflectivity is greater than 95%；
The semiconductor laser is selected from: multiple semiconductor laser single tubes for arranging in the horizontal direction arrange in the horizontal direction
Multiple luminescence units formed semiconductor laser array, arrange in the horizontal direction multiple semiconductor laser arrays, edge
The semiconductor that multiple semiconductor laser single tubes of vertical direction arrangement, the multiple luminescence units arranged along the vertical direction are formed swashs
Light device array or the multiple semiconductor laser arrays arranged along the vertical direction.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676691A (en) * | 2019-09-12 | 2020-01-10 | 华中科技大学 | Semiconductor laser spectrum beam combining device and method based on collimation-deflection element |
| CN113258415A (en) * | 2021-05-28 | 2021-08-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | Pulse laser spectrum time sequence synthesis system and method |
| CN115061286A (en) * | 2022-07-19 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6097540A (en) * | 1998-04-09 | 2000-08-01 | Ceramoptec Industries Inc. | Frequency conversion combiner system for diode lasers |
| CN1773359A (en) * | 2004-11-12 | 2006-05-17 | 中国科学院光电技术研究所 | Efficient laser frequency doubler |
| CN104466672A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Laser device for modulating output light based on semiconductor laser device array |
| CN105356215A (en) * | 2015-10-30 | 2016-02-24 | 中国工程物理研究院应用电子学研究所 | Direct frequency multiplication device of semiconductor laser |
| CN107946898A (en) * | 2017-11-22 | 2018-04-20 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser beam merging apparatus and conjunction Shu Fangfa |
| CN209389447U (en) * | 2019-02-15 | 2019-09-13 | 上海高意激光技术有限公司 | Semiconductor laser spectrum beam combination frequency doubling device |
-
2019
- 2019-02-15 CN CN201910117306.8A patent/CN109560458A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6097540A (en) * | 1998-04-09 | 2000-08-01 | Ceramoptec Industries Inc. | Frequency conversion combiner system for diode lasers |
| CN1773359A (en) * | 2004-11-12 | 2006-05-17 | 中国科学院光电技术研究所 | Efficient laser frequency doubler |
| CN104466672A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Laser device for modulating output light based on semiconductor laser device array |
| CN105356215A (en) * | 2015-10-30 | 2016-02-24 | 中国工程物理研究院应用电子学研究所 | Direct frequency multiplication device of semiconductor laser |
| CN107946898A (en) * | 2017-11-22 | 2018-04-20 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser beam merging apparatus and conjunction Shu Fangfa |
| CN209389447U (en) * | 2019-02-15 | 2019-09-13 | 上海高意激光技术有限公司 | Semiconductor laser spectrum beam combination frequency doubling device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676691A (en) * | 2019-09-12 | 2020-01-10 | 华中科技大学 | Semiconductor laser spectrum beam combining device and method based on collimation-deflection element |
| CN113258415A (en) * | 2021-05-28 | 2021-08-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | Pulse laser spectrum time sequence synthesis system and method |
| CN115061286A (en) * | 2022-07-19 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115061286B (en) * | 2022-07-19 | 2023-08-22 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
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