CN109560201A - A kind of organic photovoltaic cell of metallic transparent electrode and preparation method and composition - Google Patents
A kind of organic photovoltaic cell of metallic transparent electrode and preparation method and composition Download PDFInfo
- Publication number
- CN109560201A CN109560201A CN201811219311.1A CN201811219311A CN109560201A CN 109560201 A CN109560201 A CN 109560201A CN 201811219311 A CN201811219311 A CN 201811219311A CN 109560201 A CN109560201 A CN 109560201A
- Authority
- CN
- China
- Prior art keywords
- layer
- transparent electrode
- metallic transparent
- film
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of metallic transparent electrode and the organic photovoltaic cells of preparation method and composition.Metallic transparent electrode includes seed layer, molecular Iy self-assembled layer and conductive layer, and wherein conductive layer is the composite membrane of Ag film and cluster Ag, conductive layer with a thickness of 1-20nm；And cathode buffer layer of successively arranging on metallic transparent electrode, active layer, anode buffer layer and back electrode constitute organic photovoltaic cell.Metallic transparent electrode of the present invention not only has preferable electric conductivity and flexibility, and it can use the optical microcavity effect of Ag film generation and the plasma enhancing effect (or scattering process) of cluster Ag generation, optical field distribution in adjusting means, device is improved to the absorption rate of sunlight, prepares high performance flexible organic photovoltaic cell device.
Description
Technical field
The present invention relates to area of solar cell, and in particular to a kind of metallic transparent electrode and preparation method and organic sun
Battery.
Technical background
It is extensive to become current organic photovoltaic cell due to its good electric conductivity, higher transmitance for tin indium oxide (ITO)
The transparent electrode material used.However there is also some disadvantages by ITO, such as since the price of raw material indium rises steadily, make it
Preparation cost increases；In addition, the flexibility of ITO is poor, electric conductivity declines to a great extent after bending, is unfavorable for preparing high performance
Flexible solar cell device.Therefore, the novel transparent electrode material for developing alternative ITO becomes highly important research topic.
Scientists develop the materials such as conducting polymer, carbon nanotube, graphene film, metal nanometer line, super thin metal film work
For transparent electrode.Compared with other materials, metallic film due to it is conductive high, stability is high, ductility is good the features such as, make
The material of its substitution ITO for becoming most future.
Summary of the invention
The purpose of the present invention is overcome the deficiencies of the prior art and provide a kind of metallic transparent electrode and preparation method and composition
Organic photovoltaic cell.
The technical scheme is that
One, a kind of metallic transparent electrode:
It from top to bottom successively include seed layer, molecular Iy self-assembled layer, conductive layer, the conductive layer is Ag film and cluster Ag
Composite membrane, conductive layer with a thickness of 1-20nm.
The molecular Iy self-assembled layer is the composite membrane of 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile, 11- mercapto-undecanoic
Acid and para Toluic Acid's acetonitrile weight ratio be 1-1000:1, molecular Iy self-assembled layer with a thickness of 1-5nm.
The seed layer is ZnO film, with a thickness of 10-100nm.
Two, a kind of preparation method of metallic transparent electrode, this method specifically:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 10-100nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, is annealed
Temperature is 200 DEG C, and annealing time is 2 hours；Then spin coating 11- Mercaptoundecanoic acid and para Toluic Acid's second on ZnO seed layer
The weight ratio of nitrile molecular Iy self-assembled layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 1-1000:1；Pass through vacuum thermal evaporation
Method deposits the Ag of 1-20nm as conductive layer, forms metallic transparent electrode.
Three, the organic photovoltaic cell that a kind of metallic transparent electrode is constituted:
It from top to bottom successively include substrate, metallic transparent electrode, cathode buffer layer, photoactive layer, anode buffer layer, back electricity
Pole, metallic transparent electrode include seed layer, molecular Iy self-assembled layer, conductive layer, and the conductive layer is answering for Ag film and cluster Ag
Close film, conductive layer with a thickness of 1-20nm.
The molecular Iy self-assembled layer is the composite membrane of 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile, 11- mercapto-undecanoic
Acid and para Toluic Acid's acetonitrile weight ratio be 1-1000:1, molecular Iy self-assembled layer with a thickness of 1-5nm.
The seed layer is ZnO film, with a thickness of 10-100nm.
The substrate material is glass or polyester film；The cathode cushioning layer material is ZnO；The photoactive layer is
PTB7-Th and PC71The hybrid films of BM；The anode buffer layer material is MoO3；The back electrode material is Ag.
Beneficial effect
The metallic transparent electrode that the present invention designs can control the growth of Ag by seed layer and molecular Iy self-assembled layer
Journey.Due to the difference of two kinds of molecular self-assembling material end functional groups of 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile, 11- mercapto
Base hendecanoic acid can form the Ag film of continuously smooth, and benzoic acid acetonitrile then forms cluster Ag, therefore on ZnO seed layer
Ag film/cluster Ag composite conductive layers can be formed.Compared with traditional ITO electrode, which not only has preferably
Electric conductivity and flexibility, and can use Ag film generation optical microcavity effect and cluster Ag generate plasma increase
Potent to answer (or scattering process), in adjusting means optical field distribution, improves the utilization rate of light, and it is organic too to prepare high performance flexibility
Positive battery device.
Detailed description of the invention
Fig. 1 is organic photovoltaic cell device architecture schematic diagram of the invention.
Fig. 2 is the organic photovoltaic cell device I-V curve graph of the embodiment of the present invention 7.
Specific embodiment
Below with reference to specific example, invention is further described in detail.
As shown in Figure 1, metallic transparent electrode of the invention includes seed layer, molecular Iy self-assembled layer, conductive layer, the conduction
Layer be Ag film and cluster Ag composite membrane, conductive layer with a thickness of 1-20nm.
Preferred molecular Iy self-assembled layer is the composite membrane of 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile, 11- sulfydryl 11
The weight ratio of alkanoic acid and para Toluic Acid's acetonitrile be 1-1000:1, molecular Iy self-assembled layer with a thickness of 1-5nm.
Preferred seed layer is ZnO film, with a thickness of 10-100nm.
Organic photovoltaic cell of the invention includes including substrate, metallic transparent electrode, cathode buffer layer, photoactive layer, sun
Pole buffer layer, back electrode, metallic transparent electrode include seed layer, molecular Iy self-assembled layer, conductive layer, and conductive layer is Ag film and group
The composite membrane of cluster Ag, conductive layer with a thickness of 1-20nm.
Preferred molecular Iy self-assembled layer is the composite membrane of 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile, 11- sulfydryl 11
The weight ratio of alkanoic acid and para Toluic Acid's acetonitrile be 1:1-1000:1, molecular Iy self-assembled layer with a thickness of 1-5nm.
Preferred seed layer is ZnO film, with a thickness of 10-100nm.
Preferred substrate material is glass or polyester film；Preferred cathode cushioning layer material is ZnO；Preferred photolytic activity
Layer is PTB7-Th and PC71The hybrid films of BM；Preferred anode buffer layer material is MoO3；Preferred back electrode material is Ag.
Metallic transparent electrode of the invention, has been applied in organic photovoltaic cell.The structure includes seed layer, molecule from group
Layer, conductive layer are filled, conductive layer is the composite membrane of Ag film and cluster Ag.The present invention can be with by seed layer and molecular Iy self-assembled layer
The growth course for controlling Ag changes the pattern of Ag, forms the composite membrane of Ag film and cluster Ag.Wherein, the Ag of continuous formation is thin
Film can guarantee that transparent electrode has preferable electric conductivity and forms optical resonance microcavity effect, and the plasma that cluster Ag is generated
Effect (or scattering process) can effectively change the distribution of light field in the devices, increase active layer to the absorption rate of light, reach
To the purpose for improving shorted devices current density.
The embodiment of the present invention is as follows:
Embodiment 1:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 10nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 10:1；Made by the Ag that vacuum thermal evaporation deposits 10nm
For conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 7.3%.
Embodiment 2:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 40nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 10:1；Made by the Ag that vacuum thermal evaporation deposits 10nm
For conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 8.3%.
Embodiment 3:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 100nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
Degree is 200 DEG C, and annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile from group
The weight ratio of dress layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 10:1；The Ag of 10nm is deposited by vacuum thermal evaporation
As conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 7.5%.
Embodiment 4:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 40nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 1:1；Made by the Ag that vacuum thermal evaporation deposits 10nm
For conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 6.8%.
Embodiment 5:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 40nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 100:1；The Ag of 10nm is deposited by vacuum thermal evaporation
As conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 8.2%.
Embodiment 6:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 40nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 20:1；Made by the Ag that vacuum thermal evaporation deposits 1nm
For conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 2.7%.
Embodiment 7:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 40nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 20:1；Made by the Ag that vacuum thermal evaporation deposits 10nm
For conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 8.9%；Fig. 2 is the organic photovoltaic cell device I-V curve graph of the present embodiment.
Embodiment 8:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 10nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 20:1；The Ag of 20nm is deposited by vacuum thermal evaporation,
Form metallic transparent electrode.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 7.1%.
Embodiment 9:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；
The ZnO seed layer of 40nm is prepared by spin-coating method in glass substrate surface, and film will be formed by and annealed, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then in spin coating 11- Mercaptoundecanoic acid above and para Toluic Acid's molecule of acetonitrile self assembly
The weight ratio of layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 1000:1；The Ag of 10nm is deposited by vacuum thermal evaporation
As conductive layer, metallic transparent electrode is formed.
The ZnO cathode buffer layer of spin coating 30nm；The PTB7-Th:PC of subsequent spin coating 90nm71BM active layer；Finally deposit 8nm
MoO3(anode buffer layer) and 100nm Ag (back electrode) obtains organic photovoltaic cell as shown in Figure 1, photoelectric conversion effect
Rate is 8.6%.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form, all embodiments can not be exhaustive here.It is all to belong to technical solution of the present invention
Changes and variations that derived from are still in the scope of protection of the present invention.
Claims (7)
1. a kind of metallic transparent electrode, it is characterised in that: from top to bottom successively include seed layer, molecular Iy self-assembled layer, conductive layer.
2. a kind of metallic transparent electrode according to claim 1, it is characterised in that: the conductive layer is Ag film and cluster
The composite membrane of Ag, conductive layer with a thickness of 1-20nm.
3. a kind of metallic transparent electrode according to claim 1, it is characterised in that: the molecular Iy self-assembled layer is 11- mercapto
The weight ratio of the composite membrane of base hendecanoic acid and para Toluic Acid's acetonitrile, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 1-
1000:1, molecular Iy self-assembled layer with a thickness of 1-5nm.
4. a kind of metallic transparent electrode according to claim 1, it is characterised in that: the seed layer is ZnO film, thickness
For 10-100nm.
5. a kind of preparation method of metallic transparent electrode according to claim 1, it is characterised in that: this method specifically:
Glass substrate is successively cleaned by ultrasonic with detergent, isopropanol, ethyl alcohol, acetone, with being dried with nitrogen after cleaning；In glass
Glass substrate surface prepares the ZnO seed layer of 10-100nm by spin-coating method, and will be formed by film and anneal, annealing temperature
It is 200 DEG C, annealing time is 2 hours；Then spin coating 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile point on ZnO seed layer
The weight ratio of sub- Iy self-assembled layer, 11- Mercaptoundecanoic acid and para Toluic Acid's acetonitrile is 1-1000:1；It is heavy by vacuum thermal evaporation
The Ag of product 1-20nm forms metallic transparent electrode as conductive layer.
6. a kind of organic photovoltaic cell that metallic transparent electrode is constituted a kind of described in claim 1, it is characterised in that: from it is lower to
On successively include substrate, metallic transparent electrode, cathode buffer layer, photoactive layer, anode buffer layer, back electrode, metallic transparent electricity
Pole includes seed layer, molecular Iy self-assembled layer, conductive layer.
7. according to right want 6 described in a kind of organic photovoltaic cell that constitutes of metallic transparent electrode, it is characterised in that: the substrate
Material is glass or polyester film；The cathode cushioning layer material is ZnO；The photoactive layer is PTB7-Th and PC71BM's is mixed
Close film；The anode buffer layer material is MoO3；The back electrode material is Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811219311.1A CN109560201B (en) | 2018-10-19 | 2018-10-19 | Metal transparent electrode, preparation method thereof and organic solar cell formed by metal transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811219311.1A CN109560201B (en) | 2018-10-19 | 2018-10-19 | Metal transparent electrode, preparation method thereof and organic solar cell formed by metal transparent electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109560201A true CN109560201A (en) | 2019-04-02 |
| CN109560201B CN109560201B (en) | 2022-09-30 |
Family
ID=65865031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811219311.1A Active CN109560201B (en) | 2018-10-19 | 2018-10-19 | Metal transparent electrode, preparation method thereof and organic solar cell formed by metal transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109560201B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132055A (en) * | 2007-09-28 | 2008-02-27 | 天津理工大学 | Device for improving brightness and efficiency of organic electroluminescent device and method for making the same |
| US20100101645A1 (en) * | 2008-10-27 | 2010-04-29 | Samsung Electro-Mechanics Co., Ltd. | Electrode of dye-sensitized solar cell, manufacturing method thereof and dye-sensitized solar cell |
| CN102290529A (en) * | 2010-06-18 | 2011-12-21 | 海洋王照明科技股份有限公司 | Single-layer organic solar cell and preparation method thereof |
| KR20130074815A (en) * | 2011-12-20 | 2013-07-05 | 한국과학기술원 | All solution processible light-emitting device |
| CN103782394A (en) * | 2011-08-24 | 2014-05-07 | 株式会社村田制作所 | Solar cell and method for manufacturing same |
| CN104834026A (en) * | 2015-06-09 | 2015-08-12 | 江西师范大学 | Broadband light transparent continuous metallic film composition and realizing method thereof |
| US20160095212A1 (en) * | 2013-03-06 | 2016-03-31 | Research & Business Foundation Sungkyunkwan University | Transparent electrode and method for manufacturing same |
| CN105720199A (en) * | 2016-04-26 | 2016-06-29 | 杭州电子科技大学 | Large-area organic thin-film solar battery and preparation method thereof |
| CN106057924A (en) * | 2016-08-01 | 2016-10-26 | 河北大学 | Composite layer electrode, preparation method thereof, and transparent solar cell with use of composite layer electrode |
| CN107116231A (en) * | 2017-06-01 | 2017-09-01 | 云南大学 | A kind of preparation method of individual layer self-assembling of gold nanoparticles/molybdenum disulfide composite membrane |
| CN107393979A (en) * | 2017-06-09 | 2017-11-24 | 中国科学院宁波材料技术与工程研究所 | A kind of transparency electrode based on ultrathin metallic film and its preparation method and application |
| CN108191009A (en) * | 2018-01-25 | 2018-06-22 | 河南科技大学 | The Ag-Pd bimetallic composite electro catalytic cathodes and preparation method and application of polypyrrole modifying |
-
2018
- 2018-10-19 CN CN201811219311.1A patent/CN109560201B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101132055A (en) * | 2007-09-28 | 2008-02-27 | 天津理工大学 | Device for improving brightness and efficiency of organic electroluminescent device and method for making the same |
| US20100101645A1 (en) * | 2008-10-27 | 2010-04-29 | Samsung Electro-Mechanics Co., Ltd. | Electrode of dye-sensitized solar cell, manufacturing method thereof and dye-sensitized solar cell |
| CN102290529A (en) * | 2010-06-18 | 2011-12-21 | 海洋王照明科技股份有限公司 | Single-layer organic solar cell and preparation method thereof |
| CN103782394A (en) * | 2011-08-24 | 2014-05-07 | 株式会社村田制作所 | Solar cell and method for manufacturing same |
| KR20130074815A (en) * | 2011-12-20 | 2013-07-05 | 한국과학기술원 | All solution processible light-emitting device |
| US20160095212A1 (en) * | 2013-03-06 | 2016-03-31 | Research & Business Foundation Sungkyunkwan University | Transparent electrode and method for manufacturing same |
| CN104834026A (en) * | 2015-06-09 | 2015-08-12 | 江西师范大学 | Broadband light transparent continuous metallic film composition and realizing method thereof |
| CN105720199A (en) * | 2016-04-26 | 2016-06-29 | 杭州电子科技大学 | Large-area organic thin-film solar battery and preparation method thereof |
| CN106057924A (en) * | 2016-08-01 | 2016-10-26 | 河北大学 | Composite layer electrode, preparation method thereof, and transparent solar cell with use of composite layer electrode |
| CN107116231A (en) * | 2017-06-01 | 2017-09-01 | 云南大学 | A kind of preparation method of individual layer self-assembling of gold nanoparticles/molybdenum disulfide composite membrane |
| CN107393979A (en) * | 2017-06-09 | 2017-11-24 | 中国科学院宁波材料技术与工程研究所 | A kind of transparency electrode based on ultrathin metallic film and its preparation method and application |
| CN108191009A (en) * | 2018-01-25 | 2018-06-22 | 河南科技大学 | The Ag-Pd bimetallic composite electro catalytic cathodes and preparation method and application of polypyrrole modifying |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109560201B (en) | 2022-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104201287B (en) | Perovskite based flexible film solar cell and preparation method thereof | |
| Fu et al. | Electrodeposition of platinum on plastic substrates as counter electrodes for flexible dye-sensitized solar cells | |
| Reda | Synthesis of ZnO and Fe2O3 nanoparticles by sol–gel method and their application in dye-sensitized solar cells | |
| CN106129251A (en) | A kind of structure of flexible perovskite battery and preparation method thereof | |
| US20110108116A1 (en) | P-type NiO conducting film for organic solar cell, a method for preparation of NiO conducting film, and an organic solar cell with enhanced light-to-electric energy conversion using the same | |
| CN105789444A (en) | Perovskite solar cell based on vacuum evaporation coating method and preparation method of perovskite solar cell | |
| CN108417722A (en) | A kind of preparation method of the perovskite solar cell based on ion solution additive | |
| CN104134720A (en) | Preparation method of organic and inorganic hybridization perovskite material growing by single-source flash evaporation method and plane solar cell of material | |
| CN111192965A (en) | Flexible transparent electrode, preparation method thereof and flexible solar cell prepared from flexible transparent electrode | |
| CN105140398A (en) | Back-contact perovskite solar cell | |
| CN102263203A (en) | Organic solar battery and manufacturing method thereof | |
| CN103296209A (en) | Solar cell combining heterostructure plasmons and bulk heterojunctions | |
| Shibayama et al. | Influence of transparent conductive oxide layer on the inverted perovskite solar cell using PEDOT: PSS for hole transport layer | |
| CN103515536B (en) | A kind of simple method for preparing of transoid organic solar batteries | |
| CN114715958A (en) | Spray pyrolysis method of nickel oxide and perovskite solar cell | |
| CN109545979A (en) | The organic photovoltaic cell of metallic transparent electrode and preparation method and composition | |
| CN109065724A (en) | A kind of Mo- titanium dioxide-AgNWs flexibility perovskite solar battery and preparation method thereof | |
| CN102280589A (en) | Organic solar cell and preparation method thereof | |
| CN206148472U (en) | Perovskite solar cell based on super thin metal transparent electrode | |
| CN106449882B (en) | A kind of preparation method and applications for adulterating anthracene class organic compound thin film | |
| Elakshar et al. | Surface passivation for efficient bifacial HTL-free perovskite solar cells with SWCNT top electrodes | |
| CN106252516B (en) | A kind of translucent hybrid perovskite solar cell device of planar inverted and preparation method | |
| Cheng et al. | Low temperature processed SnO2 electron transporting layer from tin oxalate for perovskite solar cells | |
| CN110459681A (en) | Polymer solar battery and preparation method thereof based on the amine-modified zinc oxide electron-transport layer building flexible structure of polyethyleneimine | |
| KR101694803B1 (en) | Perovskite solar cells comprising metal nanowire as photoelectrode, and the preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |