CN109559966A - Accelerate the cleaning method that processing chamber is answered a pager's call - Google Patents
Accelerate the cleaning method that processing chamber is answered a pager's call Download PDFInfo
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- CN109559966A CN109559966A CN201710889449.1A CN201710889449A CN109559966A CN 109559966 A CN109559966 A CN 109559966A CN 201710889449 A CN201710889449 A CN 201710889449A CN 109559966 A CN109559966 A CN 109559966A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of cleaning methods that quickening processing chamber is answered a pager's call.Including heating process chamber, so that the indoor temperature of process cavity meets the preset temperature of cleaning impurity；It is delayed after the first preset time, processing chamber is tentatively vacuumized；Circulation executes the process of process for rapidly cleaning chamber；Circulation executes the process of depth cleaning process chamber, wherein, the process that circulation executes depth cleaning process chamber includes: that control is passed through the indoor first purge gas flow of process cavity, so that the first purge gas flow meets default first purge gas flow, to carry out depth cleaning to processing chamber, and/or, control is passed through the indoor first purge gas flow velocity of process cavity, so that the first purge gas flow velocity meets default first purge gas flow velocity, to carry out depth cleaning to processing chamber；The process of initialization process chamber is executed, to complete the cleaning to processing chamber.It can effectively shorten the answering a pager's call the time of processing chamber, improve the cleaning efficiency of processing chamber.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of cleaning method accelerating processing chamber and answering a pager's call.
Background technique
Plasma apparatus is widely used in the manufacture crafts such as current semiconductor, solar battery, FPD.With
The promotion of factory automation level, the degree of automation and fast restoration capabilities to apparatus for production line also proposed higher and higher
It is required that.After processing chamber maintenance shut-downs, need to carry out a series of operation for restoring processing chamber, if it is possible to make process cavity
Room quickly meets process conditions, can greatly shorten the time of answering a pager's call, and improves production capacity, promotes product quality, reduces maintenance cost.
In etching machine process equipment, especially for IC (integrated circuit) manufacturing process, need to guarantee processing chamber very
High vacuum degree and cleannes, in favor of effective progress of subsequent etching technics, if condition is unsatisfactory for, after performing etching,
Chip will appear pollution, lead to waste paper, and not only waste of resource increases cost, and reduces slice efficiency.Therefore it is being carved
It must assure that processing chamber has enough vacuum degrees and cleanliness before erosion work.
The process of answering a pager's call of existing processing chamber generally comprises: vacuumizing first with molecular pump to processing chamber, technique
Chamber can maintain pendulum valve at this stage and open, the state of molecular pump pumping, i.e., persistently to the state of chamber evacuation, this
State needs to continue 2-4 hours.Secondly, circulation inflatable, pumping are carried out to processing chamber, so that impurity band is gone out into processing chamber,
Achieve the purpose that cleaning procedure chamber.
But it is above-mentioned answer a pager's call during, due to taking a long time (about 2-4 hours) to the stage that processing chamber vacuumizes,
Processing chamber is cleaned again later.Therefore, this time of answering a pager's call that will lead to processing chamber greatly prolongs, and causes production efficiency
Lowly.In addition, it is existing answer a pager's call during, inflation and pumping are by opening air intake valve and fast pump valve every time, this is not
The indoor purge gas flow of process cavity can effectively be controlled.In addition to this, inflation and pumping are carried out separately, and reduce gas
The flowing of body, the cleaning ability for reducing impurity.
Therefore, how to design a kind of can effectively shorten the cleaning method that processing chamber is answered a pager's call to become this field urgently to be resolved
The technical issues of.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of quickening processing chamber is proposed
The cleaning method answered a pager's call.
To achieve the goals above, the first aspect of the present invention provides a kind of cleaning side that quickening processing chamber is answered a pager's call
Method, the cleaning method include:
Step S110, the preparation process before cleaning to the processing chamber is executed, comprising:
Step S111, the processing chamber is heated, so that the indoor temperature of the process cavity meets the pre- of cleaning impurity
If temperature；
Step S112, it is delayed after the first preset time, the processing chamber is tentatively vacuumized；
Step S120, circulation executes the process of processing chamber described in Rapid Cleaning；
Step S140, circulation executes the process that depth cleans the processing chamber, wherein the circulation executes depth cleaning
The process of the processing chamber includes:
Step S141, control is passed through the indoor first purge gas flow of the process cavity, so that first purgative gas
Body flow meets default first purge gas flow, to carry out depth cleaning to the processing chamber, and/or,
Step S142, control is passed through the indoor first purge gas flow velocity of the process cavity, so that first purgative gas
Body flow velocity meets default first purge gas flow velocity, to carry out depth cleaning to the processing chamber；
Step S150, the process for initializing the processing chamber is executed, to complete the cleaning to the processing chamber.
Preferably, described the step of tentatively being vacuumized to the processing chamber, includes:
The evacuating valve of molecular pump is opened, tentatively to be vacuumized using molecular pump to the processing chamber；
After tentatively vacuumizing, the evacuating valve of the molecular pump is closed.
Preferably, the process of processing chamber described in the circulation execution Rapid Cleaning includes:
The cycle-index and delay time of Rapid Cleaning are set, the delay time is pre- including the second preset time, third
If time, the 4th preset time and the 5th preset time；
Following each steps are executed according to cycle-index circulation:
Fast pumping valve is opened, to carry out fast pump to the processing chamber；
Be delayed second preset time；
Charging valve is opened, to provide the first purge gas to the processing chamber, wherein the first purge gas packet
Include at least one of nitrogen, helium and argon gas；
Be delayed the third preset time；
Close the fast pumping valve；
Be delayed the 4th preset time；
Close the charging valve；
Be delayed the 5th preset time.
Preferably, the cleaning method further includes carrying out between step S120 and step S140:
Step S130, the step of processing chamber is cleaned in transition is executed, comprising:
Fast pump valve is opened, to carry out fast pump to the processing chamber；
Be delayed the tenth preset time；
Close the fast pump valve；
Be delayed the 11st preset time；
Open the molecular pump evacuating valve；
Be delayed the 12nd preset time, enters the circulation later and executes the process that depth cleans the processing chamber.
Preferably, the process for executing the initialization processing chamber includes:
The processing chamber is vacuumized again；
The indoor temperature of the process cavity is initialized, so that initialization temperature meets default initialization temperature value.
Preferably, the default initialization temperature value is 0-15 DEG C.
Preferably, the preset temperature is 20-120 DEG C.
Preferably, the range of the default first purge gas flow is to be less than or equal to 100mTorr greater than 0.
The second aspect of the present invention provides a kind of cleaning method that quickening processing chamber is answered a pager's call, the cleaning method packet
It includes:
Step a, circulation executes the process that depth cleans the processing chamber, wherein the circulation executes depth and cleans institute
The process for stating processing chamber includes:
Step a1, control is passed through the indoor first purge gas flow of the process cavity, so that first purge gas
Flow meets default first purge gas flow, to carry out depth cleaning to the processing chamber, and/or,
Step a2, control is passed through the indoor first purge gas flow velocity of the process cavity, so that first purge gas
Flow velocity meets default first purge gas flow velocity, to carry out depth cleaning to the processing chamber.
Preferably, the circulation, which executes depth and cleans the process of the processing chamber, includes:
The cycle-index and delay time of set depth cleaning, the delay time includes the 6th preset time, the 7th pre-
If time, the 8th preset time and the 9th preset time；
Following each steps are executed according to cycle-index circulation:
The uninterrupted of gas flow controller is set, so that the first purge gas flow meets default first cleaning
Gas flow；
Air intake valve is opened, is passed through first purgative gas into the processing chamber through the gas flow controller
Body；
It sets the second purge gas flow, opens electrostatic chuck air intake valve, with to the indoor electrostatic card of the process cavity
Disk provides second purge gas, and second purge gas includes helium；
Be delayed the 6th preset time；
The aperture position that pendulum valve is arranged is in default aperture position, to control the speed of evacuation of the processing chamber；
Be delayed the 7th preset time；
Close the electrostatic chuck air intake valve；
Close the air intake valve；
Close the gas flow controller；
Be delayed the 8th preset time；
The aperture position that pendulum valve is arranged is in fully open state, carries out fast pump to the processing chamber；
Be delayed the 9th preset time.
Preferably, the 6th preset time, the 7th preset time, the 8th preset time and the 9th preset time are 2-
15s。
The cleaning method that quickening processing chamber of the invention is answered a pager's call, the time for making full use of processing chamber to vacuumize is (about
2-4 hours), during this period of time, the indoor steam of process cavity and remaining granule foreign are removed, so as to accelerate process cavity
The process of answering a pager's call of room effectively shortens processing chamber and answers a pager's call the time, so can enable processing chamber faster, it is more stable
Ground achievees the purpose that volume production condition.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the flow chart for accelerating the cleaning method that processing chamber is answered a pager's call in the present invention；
Fig. 2 is the flow chart of process for rapidly cleaning chamber in the present invention；
Fig. 3 is the flow chart of transition cleaning process chamber in the present invention；
Fig. 4 is the flow chart of depth cleaning process chamber in the present invention.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, the first aspect of the present invention, be related to a kind of quickening processing chamber answer a pager's call it is clear
Washing method, cleaning method include:
The preparation process S110 before cleaning to processing chamber is executed, preparation process S110 includes:
S111, heating process chamber, so that the indoor temperature of process cavity meets the preset temperature of cleaning impurity.
Specifically, in this step, the indoor temperature of process cavity can be preset, later by carrying out to processing chamber
The mode of heating, so that the indoor temperature of process cavity meets the preset temperature of cleaning impurity, for the specific value of preset temperature
It does not define, those skilled in the art can be determined the temperature for needing the processing chamber kept according to actual needs
Degree, for example, the preset temperature can be set as 20-120 DEG C.Certainly, which may be other specific values.
After S112, the first preset time of delay, processing chamber is tentatively vacuumized.
Preferably, in this step, it can use molecular pump and processing chamber tentatively vacuumized.Specifically, it opens
The evacuating valve of molecular pump, tentatively to be vacuumized to processing chamber.After tentatively vacuumizing, molecular pump can be closed
Evacuating valve, with stop processing chamber being vacuumized.
Above-mentioned cleaning method further include: circulation executes the process S120 of process for rapidly cleaning chamber.
The main purpose that the circulation executes the process S120 of process for rapidly cleaning chamber is can be rapidly to process cavity
The impurity of chamber interior carries out multiple Rapid Cleaning, to achieve the purpose that reduce the indoor impurity of process cavity, accelerates processing chamber
It answers a pager's call the time.
It should be noted that how to realize the step of carrying out Rapid Cleaning to processing chamber simultaneously in the process flow
It does not define, for example, by being rapidly evacuated to processing chamber and purgative gas can be provided to processing chamber
Body, including but not limited to nitrogen, argon gas and helium.It is, of course, also possible to which the step of being other some Rapid Cleanings, do not make herein
It limits.
Above-mentioned cleaning method further include: circulation executes the process S140 of depth cleaning process chamber.Comprising:
S141, control be passed through the indoor first purge gas flow of process cavity so that the first purge gas flow meet it is pre-
If the first purge gas flow, to carry out depth cleaning to processing chamber.And/or
S142, control be passed through the indoor first purge gas flow velocity of process cavity so that the first purge gas flow velocity meet it is pre-
If the first purge gas flow velocity, to carry out depth cleaning to processing chamber.
It should be noted that for above-mentioned default first purge gas flow and the first default purge gas flow velocity
Specific value does not define.In practical application, those skilled in the art can be required determine according to actual needs
The first purge gas flow and the first purge gas flow velocity, for example, the range of the default first purge gas flow can be with
To be less than or equal to 100mTorr greater than 0, specifically, it can use gas flow controller detection and be passed into reaction chamber indoor the
One purge gas flow and detection are passed into the indoor first purge gas flow velocity of reaction chamber.
Above-mentioned cleaning method further include: the process S150 of initialization process chamber is executed, to complete to the clear of processing chamber
It washes.
It is usually to be vacuumized to processing chamber, which probably needs in the method that traditional processing chamber is answered a pager's call
It carries out 2-4 hours, any processing is not made to processing chamber during vacuumizing, after vacuumizing, then execute
Subsequent cleaning process, including be passed through oxygen to processing chamber, high temperature is by some polymer reactions (burning) in processing chamber
It removes, and the trial operation before formal technique, with the purpose of the impurity such as this steam and the particle that guarantee removal processing chamber.Cause
This, in traditional cleaning method, the time of answering a pager's call of processing chamber is very long, reduces production efficiency, improves cost of manufacture.And this implementation
In the cleaning method that the quickening processing chamber of example is answered a pager's call, the time (about 2-4 hours) for making full use of processing chamber to vacuumize,
In this period, the indoor steam of process cavity and remaining granule foreign are removed, so as to accelerate the stream of answering a pager's call of processing chamber
Journey effectively shortens processing chamber and answers a pager's call the time, so can enable processing chamber faster, more stably reach volume production
The purpose of condition.
Preferably, as shown in Fig. 2, can first be set in the process S120 that above-mentioned circulation executes process for rapidly cleaning chamber
Determine the cycle-index and delay time of Rapid Cleaning, delay time is preset including the second preset time, third preset time, the 4th
Time and the 5th preset time.
Later, following each steps are executed according to cycle-index circulation:
S121, pumping valve is changed up.By opening fast pumping valve, fast pump is carried out to processing chamber.
S122, the second preset time of delay.
S123, charging valve is opened.
By opening charging valve, the first purge gas is provided to processing chamber using admission line, wherein the first cleaning
Gas includes at least one of nitrogen, helium and argon gas.
S124, delay third preset time.
S125, fast pumping valve is closed, stops carrying out fast pump to processing chamber.
S126, the 4th preset time of delay.
S127, charging valve is closed, stopping is inflated processing chamber.
S128, the 5th preset time of delay.
When the cycle-index of Rapid Cleaning reaches the cycle-index of setting, terminate the stream of the process for rapidly cleaning chamber
Journey.
It, can be by configuring the delay in above steps in the cleaning method that the quickening processing chamber of the present embodiment is answered a pager's call
Time configures the time of links in process, so as to accelerate the process of answering a pager's call of processing chamber, effectively shortens
Processing chamber is answered a pager's call the time, and then processing chamber can be enabled faster, more stably to achieve the purpose that volume production condition.
Preferably, it as shown in figure 4, above-mentioned circulation executes in the process S140 of depth cleaning process chamber, can set in advance
The cycle-index and delay time of depthkeeping degree cleaning, delay time are preset including the 6th preset time, the 7th preset time, the 8th
Time and the 9th preset time.Following each steps are executed according to cycle-index circulation later:
S141a, setting MFC (gas flow controller) uninterrupted.
In this step, it can use gas flow controller, setting is passed through indoor first cleaned gas stream of process cavity
Amount, so that the first purge gas flow meets default first purge gas flow.
S141b, air intake valve, the inflated with nitrogen from MFC are opened.
Specifically, it can use MFC and be passed through nitrogen into processing chamber.Certainly, in this step, other can also be passed through
Purge gas, for example, argon gas etc..
S142a, setting electrostatic chuck helium.
Specifically, the gas flow that electrostatic chuck helium can be set, by opening electrostatic chuck air intake valve, to technique
The indoor electrostatic chuck of chamber provides the helium of setting flow.To utilize helium to electrostatic chuck and the component adjacent with electrostatic chuck
It is cleaned.
S142b, the 6th preset time of delay.
S143a, setting pendulum valve position, control the speed of evacuation.
In this step, default aperture position can be in by the aperture position of control pendulum valve, for example, the opening of pendulum valve
Half is opened, so as to control the speed of evacuation of processing chamber.
S143b, the 7th preset time of delay.
S144a, electrostatic chuck helium is closed.
S144b, air intake valve is closed.
S144c, MFC is closed.
S144d, the 8th preset time of delay.
S145a, pendulum valve standard-sized sheet, to processing chamber fast pump.
S145b, the 9th preset time of delay.
When the cycle-index of depth cleaning reaches setting cycle-index, terminate the process of the depth cleaning process chamber.
The cleaning method that the quickening processing chamber of the present embodiment is answered a pager's call, through gas flow flow controller into processing chamber
Inflated with nitrogen can effectively control the aeration speed and flow of aerating air of processing chamber, in addition, by the position of setting pendulum valve, it can be with
Realize the purpose of the control speed of evacuation.Therefore, in the cleaning method that the quickening processing chamber of the present embodiment is answered a pager's call, it can use gas
Body flow controller and pendulum valve, configure optimal clean process chamber pressure, the cleaning parameters such as best inflation and pumping, to this
Processing chamber is cleaned, and so as to accelerate the process of answering a pager's call of processing chamber, effectively shortens answering a pager's call the time for processing chamber,
And then processing chamber can be enabled faster, more stably to achieve the purpose that volume production condition.
Preferably, the 6th preset time, the 7th preset time, the 8th preset time and the 9th preset time therein can be with
It is disposed as 2-15s.
Preferably, as shown in figures 1 and 3, above-mentioned cleaning method further includes executing process for rapidly cleaning chamber in circulation
It is carried out between process S120 and the process S140 of circulation execution depth cleaning process chamber:
Execute the step S130 of transition cleaning process chamber, comprising:
S131, fast pump valve is opened, to carry out fast pump to processing chamber.
S132, the tenth preset time of delay.
S133, fast pump valve is closed.
S134, the 11st preset time of delay.
S135, molecular pump evacuating valve is opened.
S136, the 12nd preset time of delay, enter the process S140 that circulation executes depth cleaning process chamber later.
In the cleaning method that the quickening processing chamber of the present embodiment is answered a pager's call, by the stream that transition cleaning process chamber is arranged
The mistake of a smooth transition of the process from the process of process for rapidly cleaning chamber to depth cleaning process chamber may be implemented in journey
Journey effectively shortens answering a pager's call the time for processing chamber, and then can make work so as to accelerate the process of answering a pager's call of processing chamber
Skill chamber can faster, more stably achieve the purpose that volume production condition.
Preferably, the process S150 of above-mentioned execution initialization process chamber includes:
S151, processing chamber is vacuumized again.
S152, initialization process chamber temp.
In this step, the indoor temperature of process cavity is initialized, so that initialization temperature meets default initialization
Temperature value, for example, the default initialization temperature can be 0-15 DEG C.
The second aspect of the present invention is related to a kind of cleaning method that quickening processing chamber is answered a pager's call, the cleaning method and this hair
The different place of bright first aspect is: the second aspect of the present invention can only include that circulation executes the depth cleaning work
The process of skill chamber executes depth as specifically circulation and cleans particular content included by the process of the processing chamber, can
With with reference to the relevant description of the first aspect of the present invention, therefore not to repeat here.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of accelerate the cleaning method answered a pager's call of processing chamber, which is characterized in that the cleaning method includes:
Step S110, the preparation process before cleaning to the processing chamber is executed, comprising:
Step S111, the processing chamber is heated, so that the indoor temperature of the process cavity meets the default temperature of cleaning impurity
Degree；
Step S112, it is delayed after the first preset time, the processing chamber is tentatively vacuumized；
Step S120, circulation executes the process of processing chamber described in Rapid Cleaning；
Step S140, circulation executes the process that depth cleans the processing chamber, wherein the circulation executes described in depth cleaning
The process of processing chamber includes:
Step S141, control is passed through the indoor first purge gas flow of the process cavity, so that first cleaned gas stream
Amount meets default first purge gas flow, to carry out depth cleaning to the processing chamber, and/or,
Step S142, control is passed through the indoor first purge gas flow velocity of the process cavity, so that first cleaned gas stream
Speed meets default first purge gas flow velocity, to carry out depth cleaning to the processing chamber；
Step S150, the process for initializing the processing chamber is executed, to complete the cleaning to the processing chamber.
2. cleaning method according to claim 1, which is characterized in that described tentatively to be vacuumized to the processing chamber
The step of include:
The evacuating valve of molecular pump is opened, tentatively to be vacuumized using molecular pump to the processing chamber；
After tentatively vacuumizing, the evacuating valve of the molecular pump is closed.
3. cleaning method according to claim 1, which is characterized in that the circulation executes processing chamber described in Rapid Cleaning
Process include:
The cycle-index and delay time of Rapid Cleaning are set, when the delay time is default including the second preset time, third
Between, the 4th preset time and the 5th preset time；
Following each steps are executed according to cycle-index circulation:
Fast pumping valve is opened, to carry out fast pump to the processing chamber；
Be delayed second preset time；
Charging valve is opened, to provide the first purge gas to the processing chamber, wherein first purge gas includes nitrogen
At least one of gas, helium and argon gas；
Be delayed the third preset time；
Close the fast pumping valve；
Be delayed the 4th preset time；
Close the charging valve；
Be delayed the 5th preset time.
4. according to claim 1 to cleaning method described in 3 any one, which is characterized in that the cleaning method further include
It is carried out between step S120 and step S140:
Step S130, the step of processing chamber is cleaned in transition is executed, comprising:
Fast pump valve is opened, to carry out fast pump to the processing chamber；
Be delayed the tenth preset time；
Close the fast pump valve；
Be delayed the 11st preset time；
Open the molecular pump evacuating valve；
Be delayed the 12nd preset time, enters the circulation later and executes the process that depth cleans the processing chamber.
5. according to claim 1 to cleaning method described in 3 any one, which is characterized in that the execution initializes the work
The process of skill chamber includes:
The processing chamber is vacuumized again；
The indoor temperature of the process cavity is initialized, so that initialization temperature meets default initialization temperature value.
6. cleaning method according to claim 5, which is characterized in that the default initialization temperature value is 0-15 DEG C.
7. according to claim 1 to cleaning method described in 3 any one, which is characterized in that the preset temperature is 20-120
℃。
8. according to claim 1 to cleaning method described in 3 any one, which is characterized in that default first purge gas
The range of flow is to be less than or equal to 100mTorr greater than 0.
9. a kind of accelerate the cleaning method answered a pager's call of processing chamber, which is characterized in that the cleaning method includes:
Step a, circulation executes the process that depth cleans the processing chamber, wherein the circulation executes depth and cleans the work
The process of skill chamber includes:
Step a1, control is passed through the indoor first purge gas flow of the process cavity, so that the first purge gas flow
Meet default first purge gas flow, to carry out depth cleaning to the processing chamber, and/or,
Step a2, control is passed through the indoor first purge gas flow velocity of the process cavity, so that the first purge gas flow velocity
Meet default first purge gas flow velocity, to carry out depth cleaning to the processing chamber.
10. cleaning method according to claim 9, which is characterized in that the circulation executes depth and cleans the process cavity
The process of room includes:
Set depth cleaning cycle-index and delay time, the delay time include the 6th preset time, the 7th it is default when
Between, the 8th preset time and the 9th preset time；
Following each steps are executed according to cycle-index circulation:
The uninterrupted for setting gas flow controller, so that the first purge gas flow meets default first purge gas
Flow；
Air intake valve is opened, is passed through first purge gas into the processing chamber through the gas flow controller；
The second purge gas flow is set, electrostatic chuck air intake valve is opened, to mention to the indoor electrostatic chuck of the process cavity
For second purge gas, second purge gas includes helium；
Be delayed the 6th preset time；
The aperture position that pendulum valve is arranged is in default aperture position, to control the speed of evacuation of the processing chamber；
Be delayed the 7th preset time；
Close the electrostatic chuck air intake valve；
Close the air intake valve；
Close the gas flow controller；
Be delayed the 8th preset time；
The aperture position that pendulum valve is arranged is in fully open state, carries out fast pump to the processing chamber；
Be delayed the 9th preset time.
11. cleaning method according to claim 10, which is characterized in that the 6th preset time, the 7th preset time,
8th preset time and the 9th preset time are 2-15s.
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| CN112309815A (en) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | Recovery method for MOCVD system for producing LED epitaxial wafer after maintenance |
| CN112447511A (en) * | 2020-11-24 | 2021-03-05 | 上海华力集成电路制造有限公司 | Method for improving polymer defects of polysilicon etching cavity |
| CN114335256A (en) * | 2022-03-10 | 2022-04-12 | 北京通美晶体技术股份有限公司 | Method for cleaning germanium wafer by dry method |
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