CN109545961A - A kind of preparation method of the class brain resistive switch based on two-dimensional material - Google Patents
A kind of preparation method of the class brain resistive switch based on two-dimensional material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 45
- 210000004556 brain Anatomy 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims abstract description 35
- 239000010949 copper Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
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- 238000005303 weighing Methods 0.000 claims description 3
- 125000003636 chemical group Chemical group 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical group 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 230000000638 stimulation Effects 0.000 abstract description 13
- 230000008859 change Effects 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229910009819 Ti3C2 Inorganic materials 0.000 description 2
- 238000010009 beating Methods 0.000 description 2
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- 230000002441 reversible effect Effects 0.000 description 2
- 230000006403 short-term memory Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000008578 acute process Effects 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
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Abstract
The preparation method that the class brain resistive based on two-dimensional material that present invention discloses a kind of switchs, this method comprises the following steps: S1: preparing the mixed solution of MXene powder and deionized water: S2: preparing hearth electrode: using magnetron sputtering method depositions of bottom electrode copper on silicon wafer；S3: preparation two-dimensional material layer: the silicon wafer that S2 step obtains is placed on photoresist spinner, revolving speed is set, the mixed solution that S1 step obtains uniformly dripped on silicon wafer, MXene mixed liquor is uniformly got rid of on hearth electrode copper；S4: it prepares top electrode: mask being attached on the silicon wafer that S3 step obtains, top electrode copper is deposited on two-dimensional material layer using magnetron sputtering method, obtain the resistive switch based on two-dimensional material MXene.New Two Dimensional material MXene is introduced class brain devices field for the first time by the technical program, and change resistance layer is used as in structure of the invention, metal ion can be made to form conductive filament in its defect under applied voltage stimulation to realize the opening of device.
Description
Technical field
The preparation method that the class brain resistive based on two-dimensional material that the present invention relates to a kind of switchs, belongs to class brain technical field.
Background technique
Human brain is considered as a kind of storage and processing system of the complex information of brilliance, have it is superior memory, study and
Recognition capability, and have about 1011A neuron and 1015A cynapse.People always have a dream of the computer of a similar human brain
With processing information and learning functionality, and realize that its key is the simulation of cynapse.
However, existing simulation Sudden-touch circuit needs a large amount of circuit element, such as transistor occupies big in integrated circuits
Quantity space, a large amount of circuit element, which results in, needs very big power consumption, thus the density of texture of artificial neural network cannot with it is big
Cranial nerve network density matches.
In recent years, a kind of novel two-dimensional material MXene gradually by it has been found that due to unusual structure and
Performance, MXene become a kind of two dimension (2D) material to have a great attraction.MXene can with the two-dimensional structure of stratiform
Surface can hang oxygen containing functional group, and many outstanding properties, such as good electric conductivity can be brought to it, serve as super electricity
Hold etc..According to research reports, MXene allows different size of ion to be inserted between layers, so in MXene introduction means
Change resistance layer serves as the medium of conducting filament growth, and the same time waits for that MXene can bring outstanding device in resistive device field
Energy.
Summary of the invention
The object of the invention is to propose a kind of based on two-dimensional material to solve the above-mentioned problems in the prior art
Class brain resistive switch preparation method.
The purpose of the invention will be achieved through the following technical solutions: it is a kind of based on two-dimensional material class brain resistive switch
Preparation method, this method comprises the following steps:
S1: it prepares the mixed solution of MXene and deionized water: weighing in MXene powder and deionized water merging centrifuge tube,
It hand centrifuge tube 5-10 minutes, is sufficiently mixed to solution and MXene；
S2: hearth electrode is prepared: using magnetron sputtering method depositions of bottom electrode copper on silicon wafer；
S3: preparation two-dimensional material layer: the silicon wafer that S2 step obtains is placed on photoresist spinner, and revolving speed is arranged, S1 step is obtained
The mixed solution of the MXene and water that obtain uniformly drip on silicon wafer, and MXene mixed liquor is uniformly got rid of on hearth electrode copper；
S4: it prepares top electrode: mask being attached on the silicon wafer that S3 step obtains, using magnetron sputtering method in two-dimensional material
Top electrode copper is deposited on layer, that is, obtains the resistive switch based on two-dimensional material MXene.
Preferably, in the S1 step, the mass ratio of MXene and deionized water is 1: 30, the weight of the MXene powder
Amount is 0.2-0.3g, and the weight of the deionized water is 6-8ml.
Preferably, in the S2 step, the hearth electrode is using one of copper, iron or silver.
Preferably, in the S4 step, the top electrode is using one of copper, iron or silver.
Preferably, the thickness of the top electrode and hearth electrode is 80~100nm.
Preferably, it in the S2 step, on the silicon wafer with a thickness of 350um, is plated on silicon wafer using magnetron sputtering method
A layer thickness is the Copper thin film of 80nm, and the flood Copper thin film is as hearth electrode.
Preferably, in the S3 step, the revolving speed of the photoresist spinner is arranged are as follows: and 0~10 second, 1000 revs/min, 10~
130 seconds, 3500 revs/min, 130~140 seconds, 1000 rpms.
Preferably, the revolving speed of the photoresist spinner is drawn on the middle and upper part for matching MXene solution in 0~10 second with dropper
Clear liquid is dripped in silicon wafer center, and after 140 seconds, MXene has equably been spin-coated on Copper thin film, complete after silicon chip drying
At the coating of the two-dimensional material MXene of the second layer.
Preferably, there is copper electrode/MXene/ copper electrode structure on the resistive switch.
The invention adopts the above technical scheme compared with prior art, has following technical effect that
Present invention operation threshold voltage compared with existing traditional class brain device is lower.The multi-work space that the present invention realizes hinders more
State, which breaks von Neumann binary system system for realization, certain value.The present invention and existing most of Nonvolatile resistances
Become device and compare the type for enriching resistive device, while having certain guidance meaning to human brain forgetting and short-term memory.
New Two Dimensional material MXene is introduced class brain devices field, the conduct in structure of the invention for the first time by the technical program
Change resistance layer can make metal ion form conductive filament in its defect, to realize beating for device under applied voltage stimulation
It opens.In terms of class brain characteristic, boost pulse is able to achieve plasticity in short-term, effectively simulates the information of the rear and front end of simulation cynapse
The process of transmitting.
Detailed description of the invention
Fig. 1 is a kind of production flow diagram of the preparation method of the class brain resistive switch based on two-dimensional material of the present invention；
Fig. 2 is class brain resistive switch testing schematic diagram of the present invention.
Fig. 3 is the IV performance plot of class brain resistive of the present invention switch.
Fig. 4 is implementation flow chart of the invention.
Specific embodiment
The purpose of the present invention, advantage and feature, by by the non-limitative illustration of preferred embodiment below carry out diagram and
It explains.These embodiments are only the prominent examples using technical solution of the present invention, it is all take equivalent replacement or equivalent transformation and
The technical solution of formation, all falls within the scope of protection of present invention.
Those skilled in the art can understand that the material MXene being related in the present invention is one kind novel two
Tie up material.Those skilled in the art can understand that step in relevant preparation flow mentioned in the present invention, arranging
It applies, one or more hardware devices in scheme.The hardware device can specially design and manufacture for required purpose.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific term) there is meaning identical with the general understanding of those of ordinary skill in fields of the present invention.Should also
Understand, those terms such as defined in the general dictionary, which should be understood that, to be had and the meaning in the context of the prior art
The consistent meaning of justice, and unless defined as here, it will not be explained in an idealized or overly formal meaning.
The preparation method that the class brain resistive based on two-dimensional material that present invention discloses a kind of switchs, this method include following step
It is rapid:
S1: it prepares the mixed solution of MXene and deionized water: weighing a certain amount of MXene powder and a certain amount of deionization
Water is placed in centrifuge tube, hand centrifuge tube 5-10 minutes, is sufficiently mixed to solution and MXene；Specifically, in the technical program
In, it weighs in 0.2-0.3gMXene powder and 6-8ml deionized water merging centrifuge tube.
S2: hearth electrode is prepared: using magnetron sputtering method depositions of bottom electrode copper on silicon wafer；
S3: preparation two-dimensional material layer: the silicon wafer that S2 step obtains is placed on photoresist spinner, and revolving speed is arranged, S1 step is obtained
The mixed solution of the MXene and water that obtain uniformly drip on silicon wafer, and MXene mixed liquor is uniformly got rid of on hearth electrode copper；
S4: it prepares top electrode: mask being attached on the silicon wafer that S3 step obtains, using magnetron sputtering method in two-dimensional material
Top electrode copper is deposited on layer, that is, obtains the resistive switch based on two-dimensional material MXene.MXene used in the technical program is
Ti3C2。
The general formula of MXene is Mn+1XnTx, n=1-3, wherein M is the elements such as transition metal, such as Ti, V, Nb, Mo, and X is C
Or N element, and T represents chemical group, such as-OH ,-O ,-Cl and-F, the chemical formula of MXene used in the present invention is Ti3C2。
Technical solution of the present invention is described in further detail with reference to the accompanying drawing:
Specifically, this method is that one layer is plated on silicon wafer using magnetron sputtering method on the silicon wafer with a thickness of 350um first
With a thickness of the Copper thin film of 80nm, a flood Copper thin film is as hearth electrode, as shown in Fig. 1 (a).
Then, the solution 5ml of the MXene: deionized water of proportion 1: 30, is placed on photoresist spinner for the silicon wafer for having plated Copper thin film
On, the revolving speed of photoresist spinner is set.The revolving speed of photoresist spinner is arranged are as follows: 0-10 seconds, 1000 revs/min, 10-130 seconds, 3500 revs/min
Clock, 130-140 second, 1000 rpms.In 0-10 seconds, the middle and upper part supernatant of proportion MXene solution, drop are drawn with dropper
In silicon wafer center, after 140 seconds, MXene has equably been spin-coated on Copper thin film, after silicon chip drying, completes second
The coating of the two-dimensional material MXene of layer, second layer MXene is as shown in schematic diagram such as Fig. 1 (b).It selects in centrifuge tube
Portion's supernatant is relatively uniform
Finally, being the plating top electrode copper on second layer MXene material.Mask is attached on MXene first, is put it into
In magnetron sputtering cavity, the copper of one layer of 100nm thickness is plated, material is thus formed the patterns of top electrode.Top electrode as shown in the figure
Square having a size of 200x200um, each fritter square electrode is to be spaced apart, integral device structural schematic diagram such as Fig. 1 (c)
It is shown.
In the preparation process of Fig. 1, the simple process of preparation, preparation cost is low, and device yield is high, actual silicon on piece
Yield rate can reach 80%-90%.
Test process to individual devices (resistive switch), hearth electrode ground connection are described below, top electrode connects positive voltage.Anti-
In multiple test process, the suitable operating voltage of the device is had found, the scanning voltage of input direct-current sweeps to 0.75V from 0,
- 0.6V is swept to from 0.75V again, finally sweeps to 0V from -0.6V, measures the corresponding size of current of scanning voltage in real time, tests device
Schematic diagram it is as shown in Figure 2.
Fig. 3 is the test result IV performance diagram of Fig. 2, and abscissa is scanning voltage in Fig. 3, and ordinate is electric current.From
0-0.75V, as the voltage of scanning is gradually increased, device current is also gradually increased, and before 0-0.7V, device is in closing
State.There is the prominent acute process risen in 0.7V or so, this is called the process of device opening, device is hit in order to prevent
Wear, the current limliting provided with 50 μ A, when device reach current limliting after, from 0.75V to 0V during, have electric current in the position of 0.2V
The process of decline, resistance state is in the position of a low resistance state, the state that device is opened still in one at this time.But very short
In time, this device " will not remember " this resistance value for a long time.The conductive filament that copper is formed in two-dimensional material MXene is not
It can keep for a long time.During reverse scan, from 0V to -0.6V during, device have been changed to close high-impedance state
State, in the position of -0.6V or so, the current value of negative current be increased dramatically, and device is opened, same to be used as protection device,
Reverse flow limiting has been located at the opening state that a low resistance state is presented to 0V for -50 μ A, -0.6V scannings.After removing stimulation voltage, device
Part is restored to the closed state of high-impedance state with natural time.During being repeatedly scanned with voltage tester device, discovery device has
Class brain characteristic, but since retention time of the conductive filament in change resistance layer MXene is shorter, there is volatibility, so referred to as class brain
The resistive of characteristic switchs.In terms of whole test process, the operating voltage of the opening of this batch of device is in 0.6-0.8V, with lasting
Stimulation, the operating voltage of opening is gradually reduced.Meanwhile under different scanning voltage stimulations, the resistance of device shows not
Same range, there are four state, the resistive as volatibility switchs obvious change in resistance, is able to achieve four resistance states variations.
In the technical scheme, when the device is stimulated to a certain extent, device reaches the state of soft breakdown, and resistance is at this time
It is a fixed low-resistance resistance value, this phenomenon is known as " soft breakdown ".After stopping voltage stimulation, hit according to stimulation to soft
That wears is different degrees of, and the time that device is restored to high-impedance state from low resistance state is different, and stimulation time is longer, and stimulation degree is bigger, device
The time that part is maintained at low resistance state is longer.It is this from soft breakdown spontaneous recovery to original state the phenomenon that, after with impulse stimulation
Still it is observed that this phenomenon, the relationship of stimulation degree and forgetting to simulation cynapse have important directive significance.
In the description of above-mentioned IV electrology characteristic, wherein device is from the closed state of high-impedance state to the opened of low resistance state
Journey, the electric current on device is increasing, finally arrives the low resistance state opening state of conducting, this process can simulate biological synapse and work as
In plasticity in short-term, and can realize at lower voltage 0.7V the work of device, this greatly reduces the function of device
Consumption, also has certain meaning to the research of low energy-consumption electronic device.After removing both ends stimulation voltage, resistive switchs beating from low resistance state
Open state is restored to the closed state of high-impedance state, this process has certain guiding value to the forgetting of simulation human brain.Even more
Application range of the New Two Dimensional material MXene in terms of class brain device is extended, and realizes MXene for the first time in class brain device side
The application in face.
In the present invention, the process step of making devices is simple, and preparation cost is low, and device yield is high, repeats
Property it is strong, be suitble to industrialized production.
The resistive switch come out manufactured in the present invention can be realized to be opened under the voltage stimulation of very little, natural time
It closes, as a kind of class brain device of volatibility, compared with conventional storage device, has lower operating voltage than RRAM device；With
Traditional class brain device (such as memristor) is compared, and can be realized the on-off ratio for meeting industry standard while possessing lower power consumption.
Have biggish competitiveness in RRAM, flash memory and class brain devices field, while preparation step is simple, cost is relatively low, device at
Product rate is high, is suitble to industrialized production.
The technical problem to be solved by the present invention is to how by two-dimensional material MXene be applied to resistive device change resistance layer
In, copper electrode/MXene/ copper electrode device architecture is made, a kind of resistive of more resistance state volatibility of low-power consumption is realized with this
Switch.The present invention is directed to realize the class brain resistive of the volatibility of higher performance switch by the application of two-dimensional material MXene, together
When enrich the type of resistive device, the resistive as volatibility switchs, and has greater advantage in terms of low-power consumption, for simulating people
Brain is forgotten and short-term memory has great significance.Simultaneously in terms of memory, the power consumption of memory also can significantly reduce.
Still there are many embodiment, all technical sides formed using equivalents or equivalent transformation by the present invention
Case is within the scope of the present invention.
Claims (10)
1. a kind of preparation method of the class brain resistive switch based on two-dimensional material, it is characterised in that: this method comprises the following steps:
S1: it prepares the mixed solution of MXene powder and deionized water: weighing in MXene powder and deionized water merging centrifuge tube,
It hand centrifuge tube 5-10 minutes, is sufficiently mixed to deionized water solution and MXene powder；
S2: hearth electrode is prepared: using magnetron sputtering method depositions of bottom electrode copper on silicon wafer；
S3: preparation two-dimensional material layer: the silicon wafer that S2 step obtains is placed on photoresist spinner, and revolving speed is arranged, S1 step is obtained
The mixed solution of MXene powder and water uniformly drips on silicon wafer, and MXene mixed liquor is uniformly got rid of on hearth electrode copper；
S4: it prepares top electrode: mask being attached on the silicon wafer that S3 step obtains, using magnetron sputtering method on two-dimensional material layer
Top electrode copper is deposited, that is, obtains the resistive switch based on two-dimensional material MXene.
2. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
In the S1 step, the mass ratio of MXene powder and deionized water is 1: 30, and the weight of the MXene powder is 0.2-
0.3g, the weight of the deionized water are 6-8ml.
3. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
In the S1 step, the general formula of MXene is Mn+1XnTx, n=1-3, wherein M is transition metal, is Ti, V, Nb, Mo element, X
It is C or N element, T represents chemical group, is-OH ,-O ,-Cl and-F.
4. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
In the S2 step, the hearth electrode is using one of copper, iron or silver.
5. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
In the S4 step, the top electrode is using one of copper, iron or silver.
6. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
The thickness of the top electrode and hearth electrode is g0~100nm.
7. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
In the S2 step, on the silicon wafer with a thickness of 350um, plating a layer thickness on silicon wafer using magnetron sputtering method is 80nm's
Copper thin film, the flood Copper thin film is as hearth electrode.
8. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, it is characterised in that:
In the S3 step, the revolving speed of the photoresist spinner is arranged are as follows: 0~10 second, 1000 revs/min, 10~130 seconds, 3500 revs/min
Clock, 130~140 seconds, 1000 rpms.
9. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 8, it is characterised in that:
The revolving speed of the photoresist spinner drew the middle and upper part supernatant of proportion MXene solution with dropper in 0~10 second, dripped in silicon wafer
Heart position, after 140 seconds, MXene solution has equably been spin-coated on Copper thin film, after silicon chip drying, completes the second layer
The coating of two-dimensional material MXene.
10. a kind of preparation method of class brain resistive switch based on two-dimensional material according to claim 1, feature exist
In: there is copper electrode/MXene/ copper electrode structure on the resistive switch.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098326A (en) * | 2019-05-28 | 2019-08-06 | 湖北大学 | A kind of two dimension Ti3C2- MXene thin-film material and preparation method thereof and the application in resistance-variable storing device |
| CN110137352A (en) * | 2019-05-28 | 2019-08-16 | 湖北大学 | One kind being based on Ti3C2The gating device and preparation method thereof of-MXene film functional layer |
| CN110176538A (en) * | 2019-05-28 | 2019-08-27 | 湖北大学 | One kind being based on two dimension Ti3C2Transparent flexible resistance-variable storing device of-MXene thin-film material and preparation method thereof |
| CN110190184A (en) * | 2019-06-05 | 2019-08-30 | 西南交通大学 | A kind of memory resistor preparation method using MXenes nano material as dielectric layer |
| CN111900250A (en) * | 2020-07-24 | 2020-11-06 | 南京邮电大学 | Memristor based on two-dimensional transition metal material and preparation method thereof |
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