CN109545903A - A kind of laser doping selective emitter junction and preparation method thereof - Google Patents
A kind of laser doping selective emitter junction and preparation method thereof Download PDFInfo
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- CN109545903A CN109545903A CN201811527098.0A CN201811527098A CN109545903A CN 109545903 A CN109545903 A CN 109545903A CN 201811527098 A CN201811527098 A CN 201811527098A CN 109545903 A CN109545903 A CN 109545903A
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- 238000002360 preparation method Methods 0.000 title description 5
- 238000005260 corrosion Methods 0.000 claims abstract description 34
- 230000007797 corrosion Effects 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 238000005286 illumination Methods 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 abstract description 4
- 238000007781 pre-processing Methods 0.000 abstract description 4
- 239000011574 phosphorus Substances 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of production methods of laser doping selective emitter junction, by carrying out local laser illumination to preliminary diffusion emitter knot, to obtain pretreatment emitter junction；The doped source on removal pretreatment emitter junction surface, to obtain secondary treatment emitter junction；Using the aqueous slkali of preset quality score, corrode along surface of the laser irradiation direction to secondary treatment emitter junction, corrosion height is preset height, to obtain laser doping selective emitter junction.The irradiated area surface dopant concentration for pre-processing emitter junction is set to be higher than non-irradiated area by laser irradiation, remove surface doping source, with the aqueous slkali of preset quality score, preset height is fallen into the surface corrosion of secondary treatment emitter junction, leading to the doping concentration on non-irradiated area surface reduces, and the doping concentration on irradiated area surface is still higher, i.e. the doping concentration on realization different zones surface is separately adjustable.The application also provides a kind of laser doping selective emitter junction having the above advantages.
Description
Technical field
This application involves technical field of solar cells, more particularly to a kind of laser doping selective emitter junction and its production
Method.
Background technique
Solar cell is a kind of photovoltaic module that can convert solar energy into electric energy, provides the required energy for society,
The problem of energy shortage and environmental pollution aspect is effectively relieved.In order to improve the photoelectric conversion efficiency of solar cell, laser doping
Selective emitter junction technology is quoted by more and more photovoltaic enterprises.
Laser doping selective emitter junction is lightly doped high square resistance area requirement and to have lower surface concentration.Laser selection
Property local irradiation after, illuminated region forms heavy doping low square resistance region, the phosphorus impurities redistribution in illuminated region.By
In lacking enough additional phosphorus impurities sources, the result of this phosphorus impurities redistribution causes surface concentration to reduce, sees Fig. 1's
Phosphorus impurities concentration profile figure.The sheet resistance of emitter junction after laser doping can only reduce between 20-50ohm/sq, i.e., from original
100-150ohm/sq be reduced to 80-100ohm/sq.
As it can be seen that there are extremely strong relevance, energy for laser doping selective emitter junction irradiated area and non-irradiated area
Independently control the surface concentration of the irradiated area of laser doping selective emitter junction and the surface concentration of non-irradiated area.
However, promoting solar cell to further decrease the contact resistance between the metal electrode of solar cell and irradiated area
Fill factor, and the irradiated area phosphorus concentration that contacts with metal electrode is required to improve as much as possible.It limits so too
The promotion of positive battery conversion efficiency.
Summary of the invention
The purpose of the application is to provide a kind of laser doping selective emitter junction and preparation method thereof, is independently controlled with realizing
The surface concentration of the irradiated area of laser doping selective emitter junction processed and the surface concentration of non-irradiated area.
In order to solve the above technical problems, the application provides a kind of production method of laser doping selective emitter junction, comprising:
Local laser illumination is carried out to preliminary diffusion emitter knot, to obtain pretreatment emitter junction；
The doped source on the pretreatment emitter junction surface is removed, to obtain secondary treatment emitter junction；
Using the aqueous slkali of preset quality score, carried out along surface of the laser irradiation direction to the secondary treatment emitter junction
Corrosion, corrosion height is preset height, to obtain laser doping selective emitter junction.
Optionally, it is described along laser irradiation direction to the secondary treatment emitter junction carry out corrosion include:
Along laser irradiation direction uniformly corroding to the secondary treatment emitter junction.
Optionally, the value range of the preset height is 20nm-150nm, including endpoint value.
Optionally, the value range of the preset quality score is 1 ‰ -5%, including endpoint value.
Optionally, the temperature value range of the aqueous slkali is 15 DEG C -50 DEG C, including endpoint value.
Optionally, described when corroding along surface of the laser irradiation direction to the secondary treatment emitter junction, when corrosion
Between value range be 10s-5min, including endpoint value.
Optionally, when the doped source is phosphorosilicate glass, the doped source on the removal pretreatment emitter junction surface,
Include: to obtain secondary treatment emitter junction
The phosphorosilicate glass on the pretreatment emitter junction surface is removed with hydrofluoric acid solution, to obtain secondary treatment emitter junction,
The mass fraction value range of the hydrofluoric acid solution is 0.5%-5%, including endpoint value.
Optionally, in the aqueous slkali using preset quality score, the secondary treatment is sent out along laser irradiation direction
It penetrates knot to be corroded, corrosion height is preset height, after obtaining laser doping selective emitter junction further include:
Surface after laser doping selective emitter junction corrosion forms the oxide layer of preset thickness.
Optionally, the surface after laser doping selective emitter junction corrosion forms the oxide layer of preset thickness
Include:
Table using ultraviolet light ozone irradiation or hydrogen peroxide solution, after laser doping selective emitter junction corrosion
The oxide layer of face formation preset thickness, wherein the mass fraction value range of hydrogen peroxide solution is 5%-20%, including endpoint
Value.
The application also provides a kind of laser doping selective emitter junction, the laser obtained including any of the above-described kind of production method
Adulterate selective emitter junction.
The production method of laser doping selective emitter junction provided herein, by being carried out to preliminary diffusion emitter knot
Local laser illumination, to obtain pretreatment emitter junction；The doped source on the pretreatment emitter junction surface is removed, to obtain secondary place
Transmission knot；Using the aqueous slkali of preset quality score, along laser irradiation direction to the surface of the secondary treatment emitter junction into
Row corrosion, corrosion height is preset height, to obtain laser doping selective emitter junction.First to preliminary diffusion emitter in the application
Knot carries out local laser illumination, obtains pretreatment emitter junction, and the irradiated area surface dopant concentration for pre-processing emitter junction is higher than
Non- irradiated area, then the doped source on removal pretreatment emitter junction surface, obtains secondary treatment emitter junction, then use preset quality
The surface corrosion of secondary treatment emitter junction is fallen preset height along laser irradiation direction, obtains laser doping by the aqueous slkali of score
Selective emitter junction leads to mixing for the non-irradiated area surface of laser doping selective emitter junction due to eroding preset height
Miscellaneous concentration reduces, and the doping concentration on irradiated area surface is still higher, i.e. realization laser doping selective emitter junction is different
The doping concentration of region surface is separately adjustable, so that the open-circuit voltage and short circuit battery of solar cell are further promoted, together
When due to the doping concentration on irradiated area surface it is higher, facilitate promoted solar cell fill factor so that solar cell
Transfer efficiency sufficiently promoted.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen
Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the phosphorus impurities concentration profile that high square resistance region and heavy doping low square resistance region is lightly doped of emitter junction；
Fig. 2 is a kind of flow chart of the production method of laser doping selective emitter junction provided by the embodiment of the present application；
Fig. 3 is another process of the production method of laser doping selective emitter junction provided by the embodiment of the present application
Figure；
Fig. 4 is that the phosphorus impurities of the non-irradiated area of laser doping selective emitter junction and irradiated area are dense in the application
Spend distribution map.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description
The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than
Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall in the protection scope of this application.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
In the solar cell technological process of production, this process of laser doping is in phosphorus diffusion process and back-etching process
Between.Laser doping selective emitter junction technology being lightly doped on the emitter junction of high square resistance after phosphorus diffusion carries out selectively office
Portion's laser irradiation, the region being irradiated with a laser form the transmitting tie region of heavy doping low square resistance.The emitter junction of heavy doping low square resistance
Metal electrode contact zone of the region as solar cell facilitates the contact resistance for reducing emitter junction and metal electrode, to drop
The series resistance of low solar cell improves fill factor.
Just as described in the background section, laser doping selective emitter junction irradiated area and non-irradiated area exist
Extremely strong relevance can independently control the surface concentration of the irradiated area of laser doping selective emitter junction and not illuminated
The surface concentration in region.However, in order to further decrease the electricity of the contact between the metal electrode of solar cell and irradiated area
Resistance promotes the fill factor of solar cell, and the irradiated area phosphorus concentration contacted with metal electrode is required to improve as much as possible.
The promotion of solar cell transfer efficiency is limited in this way.
In view of this, this application provides a kind of production methods of laser doping selective emitter junction, referring to FIG. 2, Fig. 2
For a kind of flow chart of the production method of laser doping selective emitter junction provided by the embodiment of the present application, this method comprises:
Step S101: carrying out local laser illumination to preliminary diffusion emitter knot, to obtain pretreatment emitter junction.
Specifically, being irradiated with regional area of the laser to preliminary diffusion emitter knot, pretreatment emitter junction is obtained.
It should be noted that preliminary diffusion emitter becomes the preliminary diffusion emitter that phosphorus diffusion obtains in the embodiment of the present application
Knot, but the present embodiment is to this and without limitation, in the other embodiments of the application, it is also an option that other kinds of doping
Element is diffused, and obtains preliminary diffusion emitter knot.
It should also be noted that, the surface concentration of preliminary diffusion emitter knot is not specifically limited in the present embodiment, according to
Depending on actual conditions.
Optionally, on the basis of the above embodiments, in one embodiment of the application, the table of preliminary diffusion emitter knot
Face concentration is 3 × 1020/cm3More than.
Step S102: the doped source on the removal pretreatment emitter junction surface, to obtain secondary treatment emitter junction.
Step S103: using the aqueous slkali of preset quality score, along laser irradiation direction to the secondary treatment emitter junction
Surface corroded, corrosion height be preset height, to obtain laser doping selective emitter junction.
In the embodiment of the present application, aqueous slkali is specially sodium hydroxide (NaOH) solution, and organic additive body can be used in solution
System, still, to this and without limitation, in another embodiment of the application, aqueous slkali is potassium hydroxide (KOH) to the present embodiment
Organic additive system can be used in solution, solution.
Based on any of the above embodiments, in one embodiment of the application, the value model of the preset height
It encloses for 20nm-150nm, including endpoint value, it is too small to avoid corrosion height, make laser doping selective emitter junction irradiated area
Surface concentration and non-irradiated area surface concentration it is close with pretreatment emitter junction surface concentration, i.e., both concentration difference
It is too small, cause the promotion of solar cell transfer efficiency limited, while avoiding corrosion height too big, leads to secondary treatment emitter junction quilt
The surface concentration of irradiation area and the surface concentration of non-irradiated area are smaller, equally limitation photoelectric conversion efficiency of the solar battery
Promotion.
Based on any of the above embodiments, in one embodiment of the application, the preset quality score is taken
Being worth range is 1 ‰ -5%, including endpoint value, too small to avoid the preset quality score of aqueous slkali, rotten to secondary treatment emitter junction
The erosion time is too long, and the entire process time is caused to extend, low efficiency, while avoiding the preset quality score of aqueous slkali too big, to two
When secondary processing emitter junction corrodes, excessive velocities are unfavorable for controlling corrosion process well, influence laser doping selective emitter junction
Quality.
Based on any of the above embodiments, in one embodiment of the application, the temperature value of the aqueous slkali
Range is 15 DEG C -50 DEG C, including endpoint value, avoids the temperature of aqueous slkali too low or too high, because the temperature of aqueous slkali is too low
Or excessively high, the quality of the laser doping selective emitter junction influenced.
Based on any of the above embodiments, described along laser irradiation direction pair in one embodiment of the application
When the surface of the secondary treatment emitter junction is corroded, the value range of etching time is 10s-5min, including endpoint value, is kept away
Exempt from that etching time is too short, the surface concentration of laser doping selective emitter junction irradiated area and the surface of non-irradiated area are dense
Degree is larger, is unfavorable for the raising of photoelectric conversion efficiency of the solar battery, while avoiding etching time too long, leads to corrosion height too
Greatly, the surface concentration of laser doping selective emitter junction irradiated area and the surface concentration of non-irradiated area are smaller, too
The promotion of positive electricity pond photoelectric conversion efficiency is limited.
Specifically, when the doped source is phosphorosilicate glass, the removal is described pre- in one embodiment of the application
Handle emitter junction surface doped source, include: to obtain secondary treatment emitter junction
The phosphorosilicate glass on the pretreatment emitter junction surface is removed with hydrofluoric acid solution, to obtain secondary treatment emitter junction,
The mass fraction value range of the hydrofluoric acid solution is 0.5%-5%, including endpoint value.
The production method of laser doping selective emitter junction provided herein, by being carried out to preliminary diffusion emitter knot
Local laser illumination, to obtain pretreatment emitter junction；The doped source on the pretreatment emitter junction surface is removed, to obtain secondary place
Transmission knot；Using the aqueous slkali of preset quality score, along laser irradiation direction to the surface of the secondary treatment emitter junction into
Row corrosion, corrosion height is preset height, to obtain laser doping selective emitter junction.First to preliminary diffusion emitter in the application
Knot carries out local laser illumination, obtains pretreatment emitter junction, and the irradiated area surface dopant concentration for pre-processing emitter junction is higher than
Non- irradiated area, then the doped source on removal pretreatment emitter junction surface, obtains secondary treatment emitter junction, then use preset quality
The surface corrosion of secondary treatment emitter junction is fallen preset height along laser irradiation direction, obtains laser doping by the aqueous slkali of score
Selective emitter junction leads to mixing for the non-irradiated area surface of laser doping selective emitter junction due to eroding preset height
Miscellaneous concentration reduces, and the doping concentration on irradiated area surface is still higher, i.e. realization laser doping selective emitter junction is different
The doping concentration of region surface is separately adjustable, so that the open-circuit voltage and short circuit battery of solar cell are further promoted, together
When due to the doping concentration on irradiated area surface it is higher, facilitate promoted solar cell fill factor so that solar cell
Transfer efficiency sufficiently promoted.
Based on any of the above embodiments, described along laser irradiation direction pair in one embodiment of the application
The secondary treatment emitter junction carries out corrosion
Along laser irradiation direction uniformly corroding to the secondary treatment emitter junction, the laser made is mixed
Miscellaneous selective emitter junction surfacing, the surface concentration of non-irradiated area is almost equal, the surface concentration of irradiated area
Almost equal, the quality of laser doping selective emitter junction is higher.
Referring to FIG. 3, Fig. 3 is the another of the production method of laser doping selective emitter junction provided by the embodiment of the present application
A kind of flow chart.
Based on any of the above embodiments, in one embodiment of the application, preset quality point is utilized described
Several aqueous slkalis corrodes the secondary treatment emitter junction along laser irradiation direction, and corrosion height is preset height, with
To after laser doping selective emitter junction further include:
Step S204: the surface after laser doping selective emitter junction corrosion forms the oxide layer of preset thickness.
Wherein, the specific substance of oxide layer is silica (SiO2), after forming oxide layer, laser doping can be made selective
Emitter junction can continue to for subsequent solar cell preparation sections such as back-etchings.
Optionally, the surface shape in one embodiment of application, after laser doping selective emitter junction corrosion
When at oxide layer, by preset thickness control between 1nm-5nm, including endpoint value, it avoids oxide layer preset thickness too small, causes
The hydrophily of oxide layer is poor, while avoiding oxide layer preset thickness too big, and required time is long, causes the entire process time long, effect
Rate is low.
Based on any of the above embodiments, described to be selected in the laser doping in one embodiment of the application
Selecting property emitter junction corrosion after surface formed preset thickness oxide layer include:
Table using ultraviolet light ozone irradiation or hydrogen peroxide solution, after laser doping selective emitter junction corrosion
The oxide layer of face formation preset thickness, wherein the mass fraction value range of hydrogen peroxide solution is 5%-20%, including endpoint
Value.
The application laser doping selective emitter junction production method is further elaborated with a concrete condition below.
Using phosphorosilicate glass as doped source, surface concentration is obtained at 780 DEG C -860 DEG C, after phosphorus diffusion 3 × 1020/cm3With
On preliminary diffusion emitter knot, then with the preliminary diffusion emitter knot of laser selective local irradiation obtain pretreatment emitter junction, in advance
The phosphorus impurities concentration redistribution in emitter junction irradiated area (heavy doping low square resistance region) is handled, surface concentration is maintained at 2.8
×1020/cm3More than；The phosphorus silicon glass on the hydrofluoric acid solution removal pretreatment emitter junction surface for being again 0.5-5% with mass fraction
Glass obtains secondary treatment emitter junction；It is finally uniformly rotten with the NaOH solution that mass fraction is 1 ‰ -5%, temperature is 15 DEG C -50 DEG C
Secondary treatment emitter junction surface, etching time 10s-5min are lost, corrosion height is 20nm-150nm, obtains laser doping selection
Property emitter junction, the non-irradiated area of laser doping selective emitter junction (low square resistance region is lightly doped) surface concentration 1.5 ×
1020/cm3Hereinafter, the surface concentration of the emitter junction irradiated area of laser doping remains at 2.5 × 1020/cm3More than, such as scheme
Shown in 4.
The embodiment of the present application also provides a kind of laser doping selective emitter junction, including any one of the above laser doping choosing
Laser doping selective emitter junction obtained in selecting property emitter junction production method embodiment.
Laser doping selective emitter junction provided herein, by first carrying out local laser photograph to preliminary diffusion emitter knot
It penetrates, obtains pretreatment emitter junction, the irradiated area surface dopant concentration for pre-processing emitter junction is higher than non-irradiated area, then
The doped source on removal pretreatment emitter junction surface, obtains secondary treatment emitter junction, then use the aqueous slkali of preset quality score, along sharp
The surface corrosion of secondary treatment emitter junction is fallen preset height by light direction of illumination, obtains laser doping selective emitter junction.Due to
Preset height is eroded, the doping concentration on the non-irradiated area surface of laser doping selective emitter junction is caused to reduce, and is shone
The doping concentration for penetrating region surface is still higher, that is, realizes the doping concentration on laser doping selective emitter junction different zones surface
It is separately adjustable, so that the open-circuit voltage and short circuit battery of solar cell are further promoted, simultaneously because irradiated area table
The doping concentration in face is higher, facilitates the fill factor for promoting solar cell, so that the transfer efficiency of solar cell obtains sufficiently
It is promoted.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Laser doping selective emitter junction and preparation method thereof provided herein is described in detail above.This
Specific case is applied in text, and the principle and implementation of this application are described, the explanation of above example is only intended to
Help understands the present processes and its core concept.It should be pointed out that for those skilled in the art,
Under the premise of not departing from the application principle, can also to the application, some improvement and modification can also be carried out, these improvement and modification are also fallen
Enter in the protection scope of the claim of this application.
Claims (10)
1. a kind of production method of laser doping selective emitter junction characterized by comprising
Local laser illumination is carried out to preliminary diffusion emitter knot, to obtain pretreatment emitter junction；
The doped source on the pretreatment emitter junction surface is removed, to obtain secondary treatment emitter junction；
Using the aqueous slkali of preset quality score, carried out along surface of the laser irradiation direction to the secondary treatment emitter junction rotten
Erosion, corrosion height is preset height, to obtain laser doping selective emitter junction.
2. the production method of laser doping selective emitter junction as described in claim 1, which is characterized in that described to be shone along laser
It penetrates direction and the secondary treatment emitter junction corrode and include:
Along laser irradiation direction uniformly corroding to the secondary treatment emitter junction.
3. the production method of laser doping selective emitter junction as claimed in claim 2, which is characterized in that the preset height
Value range be 20nm-150nm, including endpoint value.
4. the production method of laser doping selective emitter junction as claimed in claim 3, which is characterized in that the preset quality
The value range of score is 1 ‰ -5%, including endpoint value.
5. the production method of laser doping selective emitter junction as claimed in claim 4, which is characterized in that the aqueous slkali
Temperature value range is 15 DEG C -50 DEG C, including endpoint value.
6. such as the production method of laser doping selective emitter junction described in any one of claim 1 to 5, which is characterized in that institute
It states when corroding along surface of the laser irradiation direction to the secondary treatment emitter junction, the value range of etching time is 10s-
5min, including endpoint value.
7. the production method of laser doping selective emitter junction as claimed in claim 6, which is characterized in that when the doped source
When for phosphorosilicate glass, the doped source on the removal pretreatment emitter junction surface includes: to obtain secondary treatment emitter junction
The phosphorosilicate glass on the pretreatment emitter junction surface is removed with hydrofluoric acid solution, it is described to obtain secondary treatment emitter junction
The mass fraction value range of hydrofluoric acid solution is 0.5%-5%, including endpoint value.
8. the production method of laser doping selective emitter junction as claimed in claim 7, which is characterized in that described using pre-
If the aqueous slkali of mass fraction, the secondary treatment emitter junction is corroded along laser irradiation direction, corrosion height is default
Highly, after to obtain laser doping selective emitter junction further include:
Surface after laser doping selective emitter junction corrosion forms the oxide layer of preset thickness.
9. the production method of laser doping selective emitter junction as claimed in claim 8, which is characterized in that described to swash described
Photodoping selective emitter junction corrosion after surface formed preset thickness oxide layer include:
Surface shape using ultraviolet light ozone irradiation or hydrogen peroxide solution, after laser doping selective emitter junction corrosion
At the oxide layer of preset thickness, wherein the mass fraction value range of hydrogen peroxide solution is 5%-20%, including endpoint value.
10. a kind of laser doping selective emitter junction, which is characterized in that obtained including any one of such as claim 1 to 9 production method
The laser doping selective emitter junction arrived.
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| CN201811527098.0A CN109545903A (en) | 2018-12-13 | 2018-12-13 | A kind of laser doping selective emitter junction and preparation method thereof |
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| CN (1) | CN109545903A (en) |
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| CN110189992A (en) * | 2019-06-13 | 2019-08-30 | 常州时创能源科技有限公司 | The alkaline etching technique of SE solar battery |
| CN110690326A (en) * | 2019-10-28 | 2020-01-14 | 浙江晶科能源有限公司 | Solar cell preparation method |
| CN111341880A (en) * | 2020-03-06 | 2020-06-26 | 浙江正泰太阳能科技有限公司 | Method for manufacturing solar cell |
| CN111739956A (en) * | 2020-06-30 | 2020-10-02 | 常州时创能源股份有限公司 | Preparation method of laser SE battery |
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| CN110189992A (en) * | 2019-06-13 | 2019-08-30 | 常州时创能源科技有限公司 | The alkaline etching technique of SE solar battery |
| CN110690326A (en) * | 2019-10-28 | 2020-01-14 | 浙江晶科能源有限公司 | Solar cell preparation method |
| CN111341880A (en) * | 2020-03-06 | 2020-06-26 | 浙江正泰太阳能科技有限公司 | Method for manufacturing solar cell |
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| CN111739956B (en) * | 2020-06-30 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation method of laser SE battery |
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