CN109544617B - Temperature compensation method and temperature compensation device applied to phase type TOF sensor - Google Patents
Temperature compensation method and temperature compensation device applied to phase type TOF sensor Download PDFInfo
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- G06T7/50—Depth or shape recovery
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Abstract
The application provides a temperature compensation method and a temperature compensation device for a phase type TOF sensor, wherein the temperature compensation method comprises the following steps: obtaining a calibration temperature value CaliTemp when the phase TOF sensor performs calibration through the temperature sensor; acquiring a current temperature value NowTemp of the phase type TOF sensor when the depth value is measured; acquiring a current depth value NowDistance obtained by current measurement; obtaining a temperature compensation depth value DisTemp according to the difference value between the current temperature value and the calibration temperature value, wherein TempFeat is a relation coefficient between the temperature of the phase TOF sensor and the temperature compensation depth value; and acquiring the compensated actual depth value. The sensor can effectively inhibit fluctuation of the depth value caused by temperature change, so that the sensor outputs a stable depth image without waiting time to enable the temperature of the sensor to be stable, the efficiency of the sensor is improved, and guarantee is provided for the follow-up output of the high-precision depth image.
Description
Technical Field
The present disclosure relates to the field of image processing, and more particularly, to a temperature compensation method and a temperature compensation device for a phase-type TOF sensor.
Background
Artificial three-dimensional (3D) vision has been seen as a bridge for intelligent systems to communicate with the outside world, which enables machines to see what we see in three-dimensional space, many 3D acquisition systems have been developed over the years, including stereo vision, structured light projection and laser scanners, which unfortunately do not reliably collect real-time three-dimensional data. To solve this problem, measurement systems based on the time of flight (TOF) principle offer an elegant solution to obtain immediately the complete three-dimensional information of the target by emitting modulated light and detecting its reflected light round trip time. Time-of-flight (TOF) ranging has wide applications, such as 3D mice, gesture-based remote controls, entertainment, robotics, security systems, and automobiles.
The principle of the phase TOF image sensor is that 4 phases are collected by controlling the phase relation between a transmission tube of a pixel and emitting modulated laser: the electric charge generated by the reflected light of 0 degree, 90 degree, 180 degree and 270 degree is converted into phase by the electric charge quantity, and the depth value is further calculated through the relation among the phase, the laser frequency and the light speed.
However, since the phase TOF image sensor and the driving circuit are susceptible to temperature, unavoidable errors are generated in each measurement at different temperatures, resulting in larger fluctuation of the calculated depth value and further reduced accuracy of the depth value, so that the device generally needs to be operated for a period of time and can work normally after the temperature is stabilized. Referring to fig. 1, fig. 1 is a schematic diagram showing a relationship between electron mobility and temperature, and it can be seen that the electron mobility decreases with increasing temperature under non-low temperature conditions. This results in a greater distance measured with increasing temperature, since the measured phase angle will be greater, corresponding to some delay, due to reduced mobility. If the measuring device can work normally after waiting for the temperature to be normal, the testing speed of the phase TOF image sensor is slow, the efficiency is extremely low, and the accuracy of the measured depth value is not high enough.
Disclosure of Invention
The application provides a temperature compensation method and a temperature compensation device applied to a phase type TOF sensor, which can solve the problems of low testing speed and low efficiency caused by insufficient accuracy of a depth value and the fact that equipment is required to work normally again after temperature stabilization due to the influence of temperature on the phase type TOF image sensor and a driving circuit when the current image depth information is measured.
According to a first aspect of the present application, there is provided a temperature compensation method for a phase-type TOF sensor, the temperature compensation method comprising: obtaining a calibration temperature value CaliTemp when the phase TOF sensor performs calibration through the temperature sensor; acquiring a current temperature value NowTemp of the phase type TOF sensor when the depth value is measured; acquiring a current depth value NowDistance obtained by current measurement; obtaining a temperature compensation depth value DisTemp according to the difference value between the current temperature value and the calibrated temperature value, and according to the formula: distemp=tempfeat ×Δtemp, Δtemp=newtemp-CaliTemp, where TempFeat is a coefficient of relationship between temperature and temperature compensation depth value of the phase TOF sensor; obtaining the compensated actual depth value Distance according to the formula: distance=newdistance-DisTemp.
Preferably, the step of acquiring the calibration temperature value CaliTemp of the phase type TOF sensor for calibration by the temperature sensor includes: temperature sensors are respectively arranged at four positions of a pixel point of the phase TOF sensor; and taking an average value obtained by carrying out average operation on the temperature values obtained by the four temperature sensors as a calibration temperature value.
Preferably, the step of obtaining the depth value newdistance obtained by current measurement includes: controlling the phase relation between a transmission tube of a pixel unit of a phase TOF sensor and emitting modulated laser, and collecting four phases: photo-generated charges of 0 °, 90 °, 180 °, 270 ° are PHS1, PHS3, PHS2, PHS4, respectively; and converting the obtained electric charge into a phase, obtaining a depth value NowDistance obtained by current measurement through the relation between the phase, the laser frequency and the light speed, and according to the formula:wherein->Thus, a NowDistance can be obtained.
Preferably, the step of obtaining the depth value newdistance obtained by current measurement further includes: a pixel unit of a phase-type TOF sensor is provided, the pixel unit comprising: a substrate; a photodiode disposed within the substrate to accumulate charge in response to reflected light incident on the photodiode; the first voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a first switch, a control end of the first switch receives control signals, an input end of the first switch is connected with the photodiode, and an output end of the first switch outputs the first voltage signals when the control end of the first switch receives the control signals; the second voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a second switch, a control end of the second switch receives control signals, an input end of the second switch is connected with the photodiode, and an output end of the second switch outputs the second voltage signals when the control end of the second switch receives the control signals; setting that the phase of a control signal sent to the first switch is the same as that of the modulated light, setting that the phase of the control signal sent to the second switch is complementary with that of the control signal sent to the first switch, transmitting the modulated light to an object to be detected, and after receiving reflected light reflected back by the object to be detected after receiving the modulated light, acquiring a first voltage signal PS0 output by a first voltage signal module when the phase of the reflected light is 0 DEG and acquiring a second voltage signal PS1 output by a second voltage signal module when the phase of the reflected light is 180 DEG by a pixel unit; the method comprises the steps of obtaining a first voltage signal PS2 output by a first voltage signal output module when the phase of reflected light is 90 degrees, and obtaining a second voltage signal PS3 output by a second voltage signal output module when the phase of reflected light of modulated light is 270 degrees.
Preferably, in the step of disposing a pixel unit of the phase-type TOF sensor, the method further includes: the photoelectric diode is arranged at the center of the substrate, the first switch of the first voltage signal output module is a first transmission transistor, the first transmission transistor is arranged in the substrate and is arranged on one side of the photoelectric diode, the first transmission transistor is coupled with the photoelectric diode to output charges accumulated by the photoelectric diode as voltage signals, the second switch of the second voltage signal output module is a second transmission transistor, the second transmission transistor is arranged in the substrate and is symmetrically arranged on the other side of the photoelectric diode, and the second transmission transistor is coupled with the photoelectric diode to output charges accumulated by the photoelectric diode as voltage signals; the first voltage signal output module further includes: a first floating diffusion region disposed within the substrate and on a side of the first transfer transistor remote from the photodiode, wherein the first transfer transistor transfers charge accumulated by the photodiode to the first floating diffusion region for storage; a first reset transistor disposed in the substrate and coupled to the photodiode for resetting the charge stored in the first floating diffusion region; a first source follower transistor, the control end of which is connected with the first floating diffusion region, and the input end of which is connected with the first reset transistor; the input end of the first gating transistor is connected with the output end of the first source electrode following transistor, and the output end of the first gating transistor outputs a voltage signal; the second voltage signal output module further includes: a second floating diffusion region disposed within the substrate and on a side of the second transfer transistor remote from the photodiode, wherein the second transfer transistor transfers a second voltage signal of the photodiode to the second floating diffusion region for storage; a second reset transistor disposed on the substrate and coupled to the photodiode for resetting the charge stored in the second floating diffusion region; a second source follower transistor, the control end of which is connected with the second floating diffusion region, and the input end of which is connected with a second reset transistor; and the input end of the second gating transistor is connected with the output end of the second source electrode following transistor, and the output end of the second gating transistor outputs a voltage signal.
According to a second aspect of the present application, there is provided a temperature compensation device for a phase-type TOF sensor, the temperature compensation device comprising: the calibration temperature acquisition module is used for acquiring a calibration temperature value CaliTemp when the phase TOF sensor performs calibration through the temperature sensor; a current temperature acquisition module for acquiring a current temperature value NowTemp of the phase type TOF sensor when the depth value measurement is performed; the depth value acquisition module is used for acquiring a current depth value NowDistance obtained by current measurement; the depth compensation value obtaining module is used for obtaining a temperature compensation depth value DisTemp according to the difference value between the current temperature value and the calibrated temperature value, and according to the formula: disTemp=TempFeat=DeltaTemp, deltaTemp=NowTemp-CalITemp, wherein TempFeat is a relation coefficient between the temperature of the phase TOF sensor and a temperature compensation depth value, and is connected with a calibration temperature acquisition module and a current temperature acquisition module; the actual depth value obtaining module is used for obtaining the compensated actual depth value Distance according to the formula: distance=newdistance-DisTemp, which is connected to the depth value acquisition module and the depth compensation value acquisition module.
Preferably, the calibration temperature acquisition module comprises: a temperature sensor setting unit for setting temperature sensors at four set positions of a pixel point of the phase type TOF sensor, respectively; and the calibration temperature acquisition unit is used for taking an average value obtained by carrying out average operation on the temperature values obtained by the four temperature sensors as a calibration temperature value.
Preferably, the depth value acquisition module is further configured to: controlling the phase relation between a transmission tube of a pixel unit of a phase TOF sensor and emitting modulated laser, and collecting four phases: photo-generated charges of 0 °, 90 °, 180 °, 270 ° are PHS1, PHS3, PHS2, PHS4, respectively; and converting the obtained electric charge into a phase, obtaining a depth value NowDistance obtained by current measurement through the relation between the phase, the laser frequency and the light speed, and according to the formula:wherein->Thus, a NowDistance can be obtained.
Preferably, the pixel unit of the phase-type TOF sensor includes: a substrate; a photodiode disposed within the substrate to accumulate charge in response to reflected light incident on the photodiode; the first voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a first switch, a control end of the first switch receives control signals, an input end of the first switch is connected with the photodiode, and an output end of the first switch outputs the first voltage signals when the control end of the first switch receives the control signals; the second voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a second switch, a control end of the second switch receives control signals, an input end of the second switch is connected with the photodiode, and an output end of the second switch outputs the second voltage signals when the control end of the second switch receives the control signals; setting that the phase of a control signal sent to the first switch is the same as that of the modulated light, setting that the phase of the control signal sent to the second switch is complementary with that of the control signal sent to the first switch, transmitting the modulated light to an object to be detected, and after receiving reflected light reflected back by the object to be detected after receiving the modulated light, acquiring a first voltage signal PS0 output by a first voltage signal module when the phase of the reflected light is 0 DEG and acquiring a second voltage signal PS1 output by a second voltage signal module when the phase of the reflected light is 180 DEG by a pixel unit; the method comprises the steps of obtaining a first voltage signal PS2 output by a first voltage signal output module when the phase of reflected light is 90 degrees, and obtaining a second voltage signal PS3 output by a second voltage signal output module when the phase of reflected light of modulated light is 270 degrees.
Preferably, the photodiode is disposed at a center of the substrate, the first switch of the first voltage signal output module is a first transmission transistor, the first transmission transistor is disposed in the substrate and disposed at one side of the photodiode, the first transmission transistor is coupled with the photodiode to output charges accumulated by the photodiode as a voltage signal, the second switch of the second voltage signal output module is a second transmission transistor, the second transmission transistor is disposed in the substrate and disposed at the other side of the photodiode in a symmetrical manner, and the second transmission transistor is coupled with the photodiode to output charges accumulated by the photodiode as a voltage signal; the first voltage signal output module further includes: a first floating diffusion region disposed within the substrate and on a side of the first transfer transistor remote from the photodiode, wherein the first transfer transistor transfers charge accumulated by the photodiode to the first floating diffusion region for storage; a first reset transistor disposed in the substrate and coupled to the photodiode for resetting the charge stored in the first floating diffusion region; a first source follower transistor, the control end of which is connected with the first floating diffusion region, and the input end of which is connected with the first reset transistor; the input end of the first gating transistor is connected with the output end of the first source electrode following transistor, and the output end of the first gating transistor outputs a voltage signal; the second voltage signal output module further includes: a second floating diffusion region disposed within the substrate and on a side of the second transfer transistor remote from the photodiode, wherein the second transfer transistor transfers a second voltage signal of the photodiode to the second floating diffusion region for storage; a second reset transistor disposed on the substrate and coupled to the photodiode for resetting the charge stored in the second floating diffusion region; a second source follower transistor, the control end of which is connected with the second floating diffusion region, and the input end of which is connected with a second reset transistor; and the input end of the second gating transistor is connected with the output end of the second source electrode following transistor, and the output end of the second gating transistor outputs a voltage signal.
The beneficial effects of this application lie in: according to the temperature compensation depth value acquisition method and device, the temperature compensation depth value is acquired through acquiring the temperature during calibration and according to the calibration temperature value during calibration and the temperature characteristic of the image sensor, the actual depth value can be obtained by combining the currently acquired image depth value with the temperature compensation depth value, and therefore fluctuation of the depth value caused by temperature change can be effectively restrained through the introduction of temperature correction compensation of the phase TOF sensor, the sensor outputs a stable depth image without waiting time, the temperature of the sensor is stabilized, the efficiency of the sensor is improved, and guarantee is provided for the subsequent output of the high-precision depth image.
Drawings
FIG. 1 is a schematic diagram of the relationship between electron mobility and temperature of the prior art;
FIG. 2 is a flow chart of a temperature compensation method of the present application applied to a phase TOF sensor;
FIG. 3 is a schematic diagram of a pixel cell arrangement temperature sensor of a phase TOF sensor of the present application;
FIG. 4 is a schematic diagram of a pixel unit of a phase TOF sensor according to the present application;
FIG. 5 is an equivalent circuit schematic diagram of FIG. 4;
FIG. 6 is a graph of temperature characteristics of a phase TOF sensor of the present application;
fig. 7 is a schematic diagram of a temperature compensation device of the present application applied to a phase type TOF sensor.
Reference numerals illustrate: the substrate 203 photodiode PD first voltage signal output block 201 first transfer transistor TG1 first floating diffusion FD1 first reset transistor RST1 first source follower transistor SF1 first gate transistor SEL1 second voltage signal output block 202 second transfer transistor TG2 second floating diffusion FD2 second reset transistor RST2 second source follower transistor SF2 second gate transistor SEL2.
Detailed Description
The present application is described in further detail below with reference to the accompanying drawings by way of specific embodiments.
Referring to fig. 1 to 7, a temperature compensation method applied to a phase-type TOF sensor includes:
step S101: and acquiring a calibration temperature value CaliTemp when the phase TOF sensor performs calibration through the temperature sensor.
The step S101 includes: temperature sensors are respectively arranged at four positions of a pixel point of the phase TOF sensor; and taking an average value obtained by carrying out average operation on the temperature values obtained by the four temperature sensors as a calibration temperature value.
In this embodiment, referring to fig. 3, four positions of a pixel point of the phase-type TOF sensor are four corners of the phase-type TOF sensor. The phase TOF sensor is a 320×240 pixel array.
Step S102: the current temperature value, now temp, of the phase-type TOF sensor at the time of depth value measurement is obtained. In this embodiment, the temperature of the phase TOF sensor may be acquired by the temperature sensor.
Step S103: and acquiring a current depth value NowDistance obtained by current measurement.
The step S103 includes:
step S1031: controlling the phase relation between a transmission tube of a pixel unit of a phase TOF sensor and emitting modulated laser, and collecting four phases: the photo-generated charges of 0 °, 90 °, 180 °, 270 ° are PHS1, PHS3, PHS2, PHS4, respectively.
Step S1032: and then converting the obtained electric charge into a phase, obtaining a current depth value NowDistance obtained by current measurement through the relation between the phase, the laser frequency and the light speed, and according to the formula:wherein the method comprises the steps ofThus, a NowDistance can be obtained.
The step S1031 includes: the pixel unit of the phase TOF sensor is arranged.
Referring to fig. 4 and 5, the pixel unit includes: a substrate 203, a photodiode PD, a first voltage signal output module 201, and a second voltage signal output module 202.
The substrate 203 is used to form a device structure or chip circuitry, and the substrate 203 may be a semiconductor base including a silicon substrate, a silicon germanium substrate, a silicon carbide substrate, a silicon-on-insulator (SOI) substrate, a germanium-on-insulator (GOI) substrate, a glass substrate, or a group III-V compound substrate (e.g., silicon nitride or gallium arsenide, etc.). The substrate 203 may also be a bulk base, i.e., a silicon substrate, a silicon germanium substrate, or a silicon carbide substrate. In other embodiments, the substrate 203 can also be a silicon-on-insulator substrate or a germanium-on-insulator substrate. In other embodiments, the substrate 203 can further include a semiconductor base and an epitaxial layer formed on a surface of the semiconductor base by an epitaxial process. In this embodiment, the substrate 203 includes: a P-type monocrystalline silicon substrate (not shown) and a P-epitaxial layer.
The photodiode PD is disposed in the substrate 203, the photodiode PD is formed by an ion implantation process, and by controlling the energy and concentration of ion implantation, the depth and implantation range of ion implantation can be controlled, thereby controlling the depth and thickness of the photodiode PD. In this embodiment, the photodiode PD is a clamp photodiode (Pinned Photodiode, PPD). The photodiode PD is doped with N-type ions including phosphorus ions, arsenic ions, or antimony ions. In addition, the photodiode PD has more a thin P+ layer than the surface layer of the traditional photodiode, separates the N buried layer of the charge collection layer from the top surface of Si/SiO2 through the top P+ layer, covers up traps which cause dark current, enables the clamp photodiode to have smaller dark current than the traditional photodiode on one hand, and can form a fully depleted accumulation area on the other hand, and solves the problem of output image hysteresis.
Referring to fig. 5, the first voltage signal output module 201 includes: the first transfer transistor TG1, the first floating diffusion FD1, the first reset transistor RST1, the first source follower transistor SF1, and the first gate transistor SEL1.
A first transfer transistor TG1 disposed within the substrate 203 and disposed at one side of the photodiode PD, the first transfer transistor TG1 being coupled with the photodiode PD to output charges accumulated by the photodiode PD as a voltage signal; a first floating diffusion FD1 disposed within the substrate 203 and on a side of the first transfer transistor TG1 remote from the photodiode PD, wherein the first transfer transistor TG1 transfers charges accumulated by the photodiode PD to the first floating diffusion FD1 for storage; a first reset transistor RST1 disposed in the substrate 203 and coupled to the photodiode PD for resetting the charge stored in the first floating diffusion FD 1; a first source follower transistor SF1 having a control terminal connected to the first floating diffusion FD1 and an input terminal connected to the first reset transistor RST1; and a first gate transistor SEL1 having an input terminal connected to an output terminal of the first source follower transistor SF1, the output terminal of the first gate transistor SEL1 outputting a voltage signal.
In this embodiment, the first transfer transistor TG1, the first reset transistor RST1, the first source follower transistor SF1, and the first gate transistor SEL1 are all MOS transistors.
The second voltage signal output module 202 includes: the second transfer transistor TG2, the second floating diffusion FD2, the second reset transistor RST2, the second source follower transistor SF2, and the second gate transistor SEL2.
A second transfer transistor TG2 is disposed within the substrate 203 and a symmetrical first transfer transistor TG1 is disposed at the other side of the photodiode PD, the second transfer transistor TG2 being coupled with the photodiode PD to output the charge accumulated by the photodiode PD as a voltage signal; a second floating diffusion FD2 disposed within the substrate 203 and disposed on a side of the second transfer transistor TG2 remote from the photodiode PD, wherein the second transfer transistor TG2 transfers a second voltage signal of the photodiode PD to the second floating diffusion FD2 for storage; a second reset transistor RST2 disposed on the substrate 203 and coupled to the photodiode PD for resetting the charge stored in the second floating diffusion FD 2; a second source follower transistor SF2 having a control terminal connected to the second floating diffusion FD2 and an input terminal connected to the second reset transistor RST2; the input terminal of the second gate transistor SEL2 is connected to the output terminal of the second source follower transistor SF2, and the output terminal of the second gate transistor SEL2 outputs a voltage signal.
In this embodiment, the second transfer transistor TG2, the second reset transistor RST2, the second source follower transistor SF2, and the second gate transistor SEL2 are all MOS transistors.
The first transfer transistor TG1 is disposed at one side of the photodiode PD, the first floating diffusion FD1, the first reset transistor RST1, the first source follower transistor SF1 and the first gate transistor SEL1 are disposed at one side of the first transfer transistor TG1 away from the photodiode PD, the second transfer transistor TG2 is symmetrical to the first transfer transistor TG1 and is disposed at the other side of the photodiode PD, and the second floating diffusion FD2, the second reset transistor RST2, the second source follower transistor SF2 and the second gate transistor SEL2 are symmetrical to the first floating diffusion FD1 and are disposed at one side of the second transfer transistor TG2 away from the photodiode PD.
Further, the pixel cells further include deep trench isolation structures for isolating active areas of adjacent pixel cells, which are disposed in the substrate 203 around the periphery of the pixel cells. Specifically, a deep trench isolation structure is formed in the P-type epitaxial layer, wherein one deep trench isolation structure is formed on a side of the second N-type ion region away from the N-type buried layer, and another deep trench isolation structure is formed on a side of the fourth N-type ion region 304 away from the N-type buried layer. The deep trench isolation structure (DTI) functions in the pixels to isolate active regions between pixels, which can suppress photons injected from adjacent pixels and suppress the generation of dark current and reduce crosstalk between pixels.
Further, the pixel unit further includes a light shielding plate for blocking light from being irradiated onto an area other than the photodiode PD and shielding electrical interference, which is provided on the upper surfaces of the first voltage signal output module 201 and the second voltage signal output module 202. In the present embodiment, since the clamp photodiode PD and a plurality of active circuits are included in the pixel unit, the clamp photodiode PD is a part that obtains optical information as a received light irradiation, but other active circuits such as the first voltage signal output module 201 and the second voltage signal output module 202 do not require irradiation of light, the change in the parameter performance of the active transistor is caused if the other active circuits are irradiated with light, so that the circuit failure is caused. Therefore, after all processes are completed on the layout, a layer of light shielding plate is covered on all active transistor areas. It not only has the functions of shielding and reflecting light, but also has the functions of shielding and preventing electric interference after being grounded. The material of the light shielding plate in this embodiment is metal.
Further, the pixel unit further includes a microlens for focusing and irradiating light onto the photosensitive region of the photodiode, which is disposed on the upper surface of the pixel unit. In this embodiment, in order to further increase the fill factor FF (ratio of the cross-sectional area of the photosensitive region to the pixel area), the light blocked at the periphery is condensed on the photosensitive region of the photodiode PD by the condensing action of the microlens.
Step S104: obtaining a temperature compensation depth value DisTemp according to the difference value between the current temperature value and the calibration temperature value and the temperature characteristic curve of the phase TOF sensor,
according to the formula: distemp=tempfeat Δtemp=newtemp-CaliTemp, where TempFeat is a coefficient of temperature versus temperature compensation depth value for a phase TOF sensor.
Referring to fig. 6, fig. 6 is a temperature characteristic curve of the phase type TOF sensor. The measurement results of the temperature versus depth at the actual 1m are shown in the temperature characteristic curve of fig. 6. According to the temperature characteristic curve, a temperature compensation depth value DisTemp corresponding to the depth compensation value DisTemp can be found.
The measurement results of the experimentally measured temperature and depth at the actual 1m are shown in fig. 6. After fitting, the relationship coefficient between the temperature of the phase TOF sensor and the temperature compensation depth value: tempfeat=0.125.
Step S105: obtaining the compensated actual depth value Distance according to the formula: distance=newdistance-DisTemp.
The working principle of the present embodiment will be described with reference to fig. 1 to 7.
First, temperature values at the time of calibration are measured by temperature sensors provided at four positions of the phase-type TOF sensor, and the temperature values measured by the temperature sensors at the four positions are averaged to obtain a value equal to the calibration temperature CaliTemp.
The current temperature value now temp of the phase TOF sensor can then be obtained again by the temperature sensor.
Then, a depth value NowDistance is obtained by a phase TOF sensor. The specific process is as follows: first, the first floating diffusion FD1, the second floating diffusion FD2 and the clamp photodiode PD are reset by turning on the first transfer transistor TG1, the first reset transistor RST1, the second transfer transistor TG2 and the second reset transistor RST2, and residual charges in the clamp photodiode PD are discharged to satisfy the condition of complete depletion, and when no modulated optical signal is incident on the photodiode PD, no photo-generated charges are generated.
Then the first transfer transistor TG1, the first reset transistor RST1, the second transfer transistor TG2, and the second reset transistor RST2 are turned off, and the clamp photodiode PD starts accumulating electric charges. The control signal sent to the first transfer transistor TG1 is set to be the same as the phase of the modulated light, and the control signal sent to the second transfer transistor TG2 is set to be complementary to the phase of the control signal sent to the first transfer transistor TG 1. The modulated light is emitted, the first and second transfer transistors TG1 and TG2 are turned on by a phase relationship of a pulse signal of the modulated light and a control signal applied to the first and second transfer transistors TG1 and TG2, charges accumulated in the photodiode PD are transferred to the first and second floating diffusion regions FD1 and FD2, and after the first and second transfer transistors TG1 and TG2 are turned off, a voltage value is read by turning on the gate first and gate transistors SEL1 and SEL 1.
The method comprises the steps of measuring by adopting a two-tap four-phase method, and carrying out integration twice, wherein in the first integration stage, after receiving reflected light reflected by an object to be measured after receiving modulated light, a photodiode PD of a pixel unit acquires a first voltage signal PS0 which is output by a first voltage signal output module 201 when the phase of the reflected light is 0 DEG and acquires a second voltage signal PS1 which is output by a second voltage signal output module 202 when the phase of the reflected light is 180 DEG; in the second integration stage, after the pixel unit receives the reflected light again, the first voltage signal PS2, which is output by the first voltage signal output module 201 and has a phase of 90 ° for the reflected light, is obtained, and the second voltage signal PS3, which is output by the second voltage signal output module 202 and has a phase of 270 ° for the reflected light for the modulated light, is obtained.
According to the formula:wherein->The depth value NowDistance obtained by current measurement can be obtained, wherein c is the light speed, and f is the laser frequency.
And referring to a temperature characteristic curve of the phase TOF sensor, and acquiring a temperature compensation depth value DisTemp according to the difference value between the current temperature value and the calibrated temperature value. Specifically, according to the formula: distemp=tempfeat Δtemp, Δtemp=newtemp-CaliTemp, where TempFeat is the coefficient of temperature versus depth value for a phase TOF sensor.
Finally, according to the formula distance=newdistance-DisTemp, the actual depth value after compensation can be obtained.
Accordingly, referring to fig. 7, a temperature compensation device for a phase TOF sensor according to the functional modularized thinking of computer software includes:
and a calibration temperature acquisition module 61, configured to acquire a calibration temperature value CaliTemp when the phase TOF sensor performs calibration by using the temperature sensor.
The calibration temperature acquisition module 61 includes:
a temperature sensor setting unit for setting temperature sensors at four set positions of a pixel point of the phase type TOF sensor, respectively;
and the calibration temperature acquisition unit is used for taking an average value obtained by carrying out average operation on the temperature values obtained by the four temperature sensors as a calibration temperature value.
A current temperature acquisition module 62 for acquiring a current temperature value, newtemp, of the phase-type TOF sensor when making depth value measurements.
A depth value obtaining module 63, configured to obtain a current depth value newdistance obtained by current measurement.
The depth value acquisition module 63 is further configured to:
controlling the phase relation between a transmission tube of a pixel unit of a phase TOF sensor and emitting modulated laser, and collecting four phases: photo-generated charges of 0 °, 90 °, 180 °, 270 ° are PHS1, PHS3, PHS2, PHS4, respectively;
And then converting the obtained electric charge into a phase, obtaining a current depth value NowDistance obtained by current measurement through the relation between the phase, the laser frequency and the light speed, and according to the formula:wherein->Thus, a NowDistance can be obtained.
The depth compensation value obtaining module 64 is configured to obtain a temperature compensation depth value DisTemp according to a difference between the current temperature value and the calibration temperature value and a temperature characteristic curve of the phase type TOF sensor, and according to the formula: distemp=tempfeat ×Δtemp, Δtemp=newtemp—calitemp, where TempFeat is a coefficient of relationship between the temperature of the phase TOF sensor and the temperature compensation depth value, and is connected to the calibration temperature acquisition module 61 and the current temperature acquisition module 62.
The actual depth value obtaining module 65 is configured to obtain the compensated actual depth value Distance according to the formula:
distance=newdistance-DisTemp, which connects the depth value acquisition module 63 and the depth compensation value acquisition module 64.
The pixel units in the pixel unit embodiment of the phase TOF sensor refer to the pixel units described above, and will not be described here.
The beneficial effects of this application lie in: according to the temperature compensation depth value acquisition method and device, the temperature compensation depth value is acquired through acquiring the temperature during calibration and according to the calibration temperature value during calibration and the temperature characteristic of the image sensor, the actual depth value can be obtained by combining the currently acquired image depth value with the temperature compensation depth value, and therefore fluctuation of the depth value caused by temperature change can be effectively restrained through the introduction of temperature correction compensation of the phase TOF sensor, the sensor outputs a stable depth image without waiting time, the temperature of the sensor is stabilized, the efficiency of the sensor is improved, and guarantee is provided for the subsequent output of the high-precision depth image.
Those skilled in the art will appreciate that all or part of the steps of the various methods in the above embodiments may be implemented by a program to instruct related hardware, and the program may be stored in a computer readable storage medium, where the storage medium may include: read-only memory, random access memory, magnetic or optical disk, etc.
The foregoing is a further detailed description of the present application in connection with the specific embodiments, and it is not intended that the practice of the present application be limited to such descriptions. It will be apparent to those skilled in the art from this disclosure that several simple deductions or substitutions can be made without departing from the inventive concepts of the present application.
Claims (4)
1. A temperature compensation method applied to a phase-type TOF sensor, the temperature compensation method comprising:
obtaining a calibration temperature value CaliTemp when the phase TOF sensor performs calibration through a temperature sensor;
acquiring a current temperature value NowTemp of the phase type TOF sensor when measuring a depth value;
acquiring a current depth value NowDistance obtained by current measurement;
obtaining a temperature compensation depth value DisTemp according to the difference value between the current temperature value and the calibrated temperature value, and according to the formula: distemp=tempfeat×Δtemp, Δtemp=newtemp-CaliTemp, where TempFeat is a coefficient of relationship between the temperature of the phase TOF sensor and the temperature compensation depth value;
Obtaining the compensated actual depth value Distance according to the formula:
distance=newdistance-DisTemp, i.e. obtained;
the step of obtaining the depth value NowDistance obtained by current measurement comprises the following steps:
controlling the phase relation between a transmission tube of a pixel unit of the phase type TOF sensor and emitting modulated laser, and collecting four phases: photo-generated charges of 0 °, 90 °, 180 °, 270 ° are PHS1, PHS3, PHS2, PHS4, respectively;
and converting the obtained electric charge into a phase, obtaining a depth value NowDistance obtained by current measurement through the relation between the phase, the laser frequency and the light speed, and according to the formula:wherein->Thus obtaining the NowDistance;
the step of obtaining the depth value NowDistance obtained by current measurement further comprises the following steps:
setting a pixel unit of the phase type TOF sensor, wherein the pixel unit comprises:
a substrate;
a photodiode disposed within the substrate to accumulate charge in response to reflected light incident on the photodiode;
the first voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a first switch, wherein a control end of the first switch receives control signals, an input end of the first switch is connected with the photodiode, and an output end of the first switch outputs the first voltage signals when the control end of the first switch receives the control signals; and
The second voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a second switch, a control end of the second switch receives control signals, an input end of the second switch is connected with the photodiode, and an output end of the second switch outputs the second voltage signals when the control end of the second switch receives the control signals;
setting that the phase of a control signal sent to the first switch is the same as that of a modulated light, setting that the phase of the control signal sent to the second switch is complementary with that of the control signal sent to the first switch, transmitting the modulated light to an object to be detected, and after receiving a reflected light reflected back by the object to be detected after receiving the modulated light, acquiring a first voltage signal PS0 output by the first voltage signal module when the phase of the reflected light is 0 degree, and acquiring a second voltage signal PS1 output by the second voltage signal module when the phase of the reflected light is 180 degrees;
acquiring a first voltage signal PS2 output by the first voltage signal module when the voltage output by the first voltage signal module is 90 DEG in phase, and acquiring a second voltage signal PS3 output by the second voltage signal module when the voltage output by the second voltage signal module is 270 DEG in phase;
In the step of disposing a pixel unit of the phase-type TOF sensor, the method further includes:
the first switch of the first voltage signal output module is a first transmission transistor, the first transmission transistor is arranged in the substrate and is arranged on one side of the photodiode, the first transmission transistor is coupled with the photodiode to output the charges accumulated by the photodiode as voltage signals, the second switch of the second voltage signal output module is a second transmission transistor, the second transmission transistor is arranged in the substrate and is symmetrical to the first transmission transistor, the second transmission transistor is coupled with the photodiode to output the charges accumulated by the photodiode as voltage signals;
the first voltage signal output module further includes:
a first floating diffusion region disposed within the substrate and on a side of the first transfer transistor remote from the photodiode, wherein the first transfer transistor transfers charge accumulated by the photodiode to the first floating diffusion region for storage;
A first reset transistor disposed within the substrate coupling the photodiode for resetting the charge held by the first floating diffusion region;
a first source follower transistor, the control end of which is connected with the first floating diffusion region, and the input end of which is connected with the first reset transistor; and
the input end of the first gating transistor is connected with the output end of the first source following transistor, and the output end of the first gating transistor outputs the voltage signal;
the second voltage signal output module further includes:
a second floating diffusion region disposed within the substrate and on a side of the second transfer transistor remote from the photodiode, wherein the second transfer transistor transfers a second voltage signal of the photodiode to the second floating diffusion region for storage;
a second reset transistor disposed on the substrate coupled to the photodiode for resetting the charge stored in the second floating diffusion region;
a second source follower transistor, the control end of which is connected with the second floating diffusion region, and the input end of which is connected with the second reset transistor; and
And the input end of the second gating transistor is connected with the output end of the second source electrode following transistor, and the output end of the second gating transistor outputs the voltage signal.
2. The method of claim 1, wherein the step of obtaining, by the temperature sensor, a calibration temperature value CaliTemp at which the phase TOF sensor is calibrated, comprises:
temperature sensors are respectively arranged at four positions of a pixel point of the phase TOF sensor;
and taking an average value obtained by carrying out average operation on the temperature values obtained by the four temperature sensors as the calibration temperature value.
3. A temperature compensation device for a phase-type TOF sensor, the temperature compensation device comprising:
the calibration temperature acquisition module is used for acquiring a calibration temperature value CaliTemp when the phase TOF sensor performs calibration through the temperature sensor;
a current temperature acquisition module for acquiring a current temperature value newtemp of the phase-type TOF sensor when the depth value measurement is performed;
the depth value acquisition module is used for acquiring a current depth value NowDistance obtained by current measurement;
the depth compensation value obtaining module is configured to obtain a temperature compensation depth value DisTemp according to a difference value between the current temperature value and the calibration temperature value, and according to a formula: disTemp=TempFeat+ΔTemp, ΔTemp=NowTemp-CalITemp, wherein TempFeat is a coefficient of relationship between the temperature of the phase TOF sensor and a temperature compensation depth value, and is connected with the calibration temperature acquisition module and the current temperature acquisition module;
The actual depth value obtaining module is used for obtaining the compensated actual depth value Distance according to the formula:
distance=newdistance-DisTemp, which connects the depth value acquisition module and the depth compensation value acquisition module;
the depth value acquisition module is further configured to:
controlling the phase relation between a transmission tube of a pixel unit of the phase type TOF sensor and emitting modulated laser, and collecting four phases: photo-generated charges of 0 °, 90 °, 180 °, 270 ° are PHS1, PHS3, PHS2, PHS4, respectively;
and converting the obtained electric charge into a phase, obtaining a depth value NowDistance obtained by current measurement through the relation between the phase, the laser frequency and the light speed, and according to the formula:wherein->Thus obtaining the NowDistance;
the pixel unit of the phase TOF sensor comprises:
a substrate;
a photodiode disposed within the substrate to accumulate charge in response to reflected light incident on the photodiode;
the first voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a first switch, wherein a control end of the first switch receives control signals, an input end of the first switch is connected with the photodiode, and an output end of the first switch outputs the first voltage signals when the control end of the first switch receives the control signals; and
The second voltage signal output module is used for converting charges accumulated in the photodiode into voltage signals and comprises a second switch, a control end of the second switch receives control signals, an input end of the second switch is connected with the photodiode, and an output end of the second switch outputs the second voltage signals when the control end of the second switch receives the control signals;
setting that the phase of a control signal sent to the first switch is the same as that of a modulated light, setting that the phase of the control signal sent to the second switch is complementary with that of the control signal sent to the first switch, transmitting the modulated light to an object to be detected, and after receiving a reflected light reflected back by the object to be detected after receiving the modulated light, acquiring a first voltage signal PS0 output by the first voltage signal module when the phase of the reflected light is 0 degree, and acquiring a second voltage signal PS1 output by the second voltage signal module when the phase of the reflected light is 180 degrees;
acquiring a first voltage signal PS2 output by the first voltage signal module when the voltage output by the first voltage signal module is 90 DEG in phase, and acquiring a second voltage signal PS3 output by the second voltage signal module when the voltage output by the second voltage signal module is 270 DEG in phase;
The first switch of the first voltage signal output module is a first transmission transistor, the first transmission transistor is arranged in the substrate and is arranged on one side of the photodiode, the first transmission transistor is coupled with the photodiode to output the charges accumulated by the photodiode as voltage signals, the second switch of the second voltage signal output module is a second transmission transistor, the second transmission transistor is arranged in the substrate and is symmetrical to the first transmission transistor, the second transmission transistor is coupled with the photodiode to output the charges accumulated by the photodiode as voltage signals;
the first voltage signal output module further includes:
a first floating diffusion region disposed within the substrate and on a side of the first transfer transistor remote from the photodiode, wherein the first transfer transistor transfers charge accumulated by the photodiode to the first floating diffusion region for storage;
a first reset transistor disposed within the substrate coupling the photodiode for resetting the charge held by the first floating diffusion region;
A first source follower transistor, the control end of which is connected with the first floating diffusion region, and the input end of which is connected with the first reset transistor; and
the input end of the first gating transistor is connected with the output end of the first source following transistor, and the output end of the first gating transistor outputs the voltage signal;
the second voltage signal output module further includes:
a second floating diffusion region disposed within the substrate and on a side of the second transfer transistor remote from the photodiode, wherein the second transfer transistor transfers a second voltage signal of the photodiode to the second floating diffusion region for storage;
a second reset transistor disposed on the substrate coupled to the photodiode for resetting the charge stored in the second floating diffusion region;
a second source follower transistor, the control end of which is connected with the second floating diffusion region, and the input end of which is connected with the second reset transistor; and
and the input end of the second gating transistor is connected with the output end of the second source electrode following transistor, and the output end of the second gating transistor outputs the voltage signal.
4. A temperature compensation device according to claim 3, wherein the calibration temperature acquisition module comprises:
a temperature sensor setting unit for setting temperature sensors at four set positions of a pixel point of the phase-type TOF sensor, respectively;
and the calibration temperature acquisition unit is used for taking an average value obtained by carrying out average operation on the temperature values obtained by the four temperature sensors as the calibration temperature value.
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| CN113552557B (en) * | 2020-04-15 | 2024-03-29 | 杭州萤石软件有限公司 | Range finding calibration method, device and equipment for flight time camera |
| CN112198525B (en) * | 2020-09-30 | 2023-04-28 | Oppo广东移动通信有限公司 | Compensation data determining method and device, compensation method and device and electronic equipment |
| CN114339087A (en) * | 2020-09-30 | 2022-04-12 | 思特威(上海)电子科技股份有限公司 | TOF image sensor pixel structure and ranging system |
| CN113298778B (en) * | 2021-05-21 | 2023-04-07 | 奥比中光科技集团股份有限公司 | Depth calculation method and system based on flight time and storage medium |
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