CN109544617A - Temperature-compensation method and temperature compensation means applied to phase type TOF sensor - Google Patents
Temperature-compensation method and temperature compensation means applied to phase type TOF sensor Download PDFInfo
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/50—Depth or shape recovery
- G06T7/521—Depth or shape recovery from laser ranging, e.g. using interferometry; from the projection of structured light
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Abstract
The application provides the temperature-compensation method and temperature compensation means for being applied to phase type TOF sensor, and temperature-compensation method includes: the calibration temperature value CaliTemp obtained when phase type TOF sensor is demarcated by temperature sensor；Obtain the current temperature value NowTemp of phase type TOF sensor when carrying out depth value measurement；Acquisition currently measures obtained current depth value NowDistance；Temperature-compensating depth value DisTemp is obtained according to the difference of current temperature value and calibration temperature value, wherein TempFeat is the temperature of phase type TOF sensor and the coefficient of relationship of temperature-compensating depth value；Obtain compensated actual depth value.The application can effectively inhibit the fluctuation of depth value caused by temperature change, so that sensor is exported stable depth map and allow the temperature of sensor to settle out without the waiting time, improve the efficiency of sensor, provide safeguard for subsequent output high accuracy depth figure.
Description
Technical field
This application involves field of image processings, more particularly to applied to phase type TOF sensor temperature-compensation method with
And the temperature compensation means applied to phase type TOF sensor.
Background technique
The bridge that artificial three-dimensional (3D) vision is always treated as intelligence system and the external world contacts, it is enabled the machine to
The world that we are seen is seen in three-dimensional space, is developed many 3D acquisition systems, including stereopsis for many years
Feel, structured light projection and laser scanner, unfortunately, these all cannot reliably collect real-time three-dimensional data.To understand
Certainly this problem, the measuring system based on flight time (TOF) principle provide a kind of solution of gracefulness, it passes through sending
Modulation light simultaneously detects its reflected light two-way time and obtains the complete three-dimensional information of target immediately.Flight time (TOF) ranging has
It is widely applied, such as 3D mouse, the remote controler based on gesture, entertainment field, robot field, security system and automobile.
The principle of phase type TOF imaging sensor is that the phase of the transfer tube and transmitting modulation laser by controlling pixel is closed
System, acquire 4 phases: 0 °, 90 °, 180 °, 270 ° of reflected light produces raw charge, then is converted to phase by the quantity of electric charge, passes through
The relationship of phase, laser frequency and the light velocity further calculates out depth value.
But since phase type TOF imaging sensor and driving circuit are easy to be affected by temperature, cause in difference
At a temperature of, each measurement can all generate inevitable error, cause calculated depth value fluctuation larger and then reduce
The precision of depth value could work normally so generally requiring and equipment being allowed to run after a period of time waiting temperature is stablized.It please refers to
The relation schematic diagram of Fig. 1, Fig. 1 between electron mobility and temperature, it can be seen that electron mobility in non-cryogenic all
It is the raising with temperature and is reduced in a given linearity.Which results in the distance measured as the temperature rises changes
Greatly, this is because due to mobility reduction, the phase angle measured can become larger, and be equivalent to some delays more.If waited
Measuring device could work normally after temperature is normal, then the test speed that will lead to phase type TOF imaging sensor is slow, efficiency
Precision that is extremely low and measuring obtained depth value is not high enough.
Summary of the invention
The application provides a kind of temperature-compensation method and temperature compensation means applied to phase type TOF sensor, energy
Enough when solving measurement image depth information now since phase type TOF imaging sensor and driving circuit are influenced by temperature
And causes the precision of depth value not high enough and need equipment that can work normally again after temperature is stablized and cause to test
The problem of speed is slow, inefficiency.
According to a first aspect of the present application, the application provides the temperature-compensation method for being applied to phase type TOF sensor, temperature
Degree compensation method includes: the calibration temperature value obtained when phase type TOF sensor is demarcated by temperature sensor
CaliTemp；Obtain the current temperature value NowTemp of phase type TOF sensor when carrying out depth value measurement；Obtain current survey
The current depth value NowDistance measured；It is deep that temperature-compensating is obtained according to the difference of current temperature value and calibration temperature value
Angle value DisTemp, according to formula: DisTemp=TempFeat* Δ Temp, Δ Temp=NowTemp-CaliTemp, wherein
TempFeat is the temperature of phase type TOF sensor and the coefficient of relationship of temperature-compensating depth value；It obtains compensated practical deep
Angle value Distance, according to formula: Distance=NowDistance-DisTemp can be obtained.
Preferably, calibration temperature value when phase type TOF sensor is demarcated is being obtained by temperature sensor
It include: that temperature sensor is respectively set in four positions of the pixel of phase type TOF sensor in the step of CaliTemp；It will
The temperature value that four temperature sensors obtain carries out the resulting average value of average calculating operation as calibration temperature value.
It preferably, include: control phase type in obtaining the step of currently measuring obtained depth value NowDistance
The phase relation of the transfer tube of the pixel unit of TOF sensor and transmitting modulation laser, acquires four phases: 0 °, 90 °, 180 °,
270 ° of photogenerated charge is respectively PHS1, PHS3, PHS2, PHS4；Phase is converted to by the obtained quantity of electric charge again, by phase,
The depth value NowDistance that the Relation acquisition of laser frequency and the light velocity currently measures, according to formula:WhereinIt can be obtained NowDistance.
Preferably, in obtaining the step of currently measuring obtained depth value NowDistance further include: setting phase type
The pixel unit of TOF sensor, pixel unit include: substrate；Photodiode is set in substrate, in response to
Incident reflected light on the photodiode and stored charge；First voltage signal output module is used to accumulate in photoelectricity
The charge conversion of diode is voltage signal comprising first switch, the control terminal of first switch receive control signal, and first opens
The input terminal of pass connects photodiode, and the output end of first switch is defeated when the control terminal of first switch receives control signal
First voltage signal out；And second voltage signal output module, be used in the charge conversion of photodiode be by accumulation
Voltage signal comprising second switch, the control terminal of second switch receive control signal, and the input terminal of second switch connects photoelectricity
The output end of diode, second switch exports second voltage signal when the control terminal of second switch receives control signal；Its
In, the control signal that setting is sent to first switch is identical as the phase of modulation light, and setting is sent to the control letter of second switch
Number be sent to first switch control signal phase complements, emit modulation light to object under test, pixel unit receive to
After survey object receives the reflected light that modulation light back reflection is returned, the voltage for obtaining the output of first voltage signaling module is reflected light
The first voltage signal PS0 of first voltage signal output module output when phase is 0 °, obtains second voltage signaling module
The voltage signal of output is the second voltage signal of second voltage signal output module output of the reflected light when phase is 180 °
PS1；The voltage for obtaining the output of first voltage signaling module is first voltage signal output module of the reflected light when phase is 90 °
The first voltage signal PS2 of output, obtain the reflected light that the voltage that second voltage signaling module exports is modulation light is in phase
The second voltage signal PS3 of second voltage signal output module output at 270 °.
Preferably, in the step of pixel unit of phase type TOF sensor is set, further includes: photodiode setting
In the center of substrate, the first switch of first voltage signal output module is the first transmission transistor, the first transmission crystal
Pipe is set to the side in substrate and being set to photodiode, the first transmission transistor and photodiode-couple with by light
The charge output of electric diode accumulation is voltage signal, and the second switch of second voltage signal output module is the second transmission crystal
Pipe, the second transmission transistor is set in substrate and symmetrical first transmission transistor is set to the other side of photodiode,
Second transmission transistor and photodiode-couple are exported with the charge for accumulating photodiode as voltage signal；First voltage
Signal output module further include: the first floating diffusion region is set in substrate and to be set to the first transmission transistor separate
The side of photodiode, wherein the electric charge transfer that the first transmission transistor accumulates photodiode to the first floating diffusion
Area is saved；First reset transistor is set in substrate and couples photodiode, to protect the first floating diffusion region
The charge deposited is resetted；First source following transistor, control terminal connect the first floating diffusion region, input terminal connection the
One reset transistor；And first gating transistor, input terminal connect the output end of the first source following transistor, the first choosing
The output end output voltage signal of logical transistor；Second voltage signal output module further include: the second floating diffusion region, setting
In in substrate and being set to side of second transmission transistor far from photodiode, wherein the second transmission transistor is by light
The second voltage signal of electric diode is transferred to the second floating diffusion region and is saved；Second reset transistor is set to lining
Photodiode is coupled on bottom, the charge to save the second floating diffusion region resets；Second source following transistor,
Its control terminal connects the second floating diffusion region, and input terminal connects the second reset transistor；And second gating transistor, it is defeated
Enter the output end of the second source following transistor of end connection, the output end output voltage signal of the second gating transistor.
According to the second face of the application, the application provides the temperature compensation means for being applied to phase type TOF sensor, temperature
Compensation device includes: calibration temperature acquisition module, is used to obtain phase type TOF sensor by temperature sensor and be demarcated
When calibration temperature value CaliTemp；Current Temperatures obtain module, are used to obtain phase type TOF when carrying out depth value measurement
The current temperature value NowTemp of sensor；Depth value obtains module, is used to obtain the current depth value for currently measuring and obtaining
NowDistance；Depth compensation value obtains module, is used to obtain temperature according to the difference of current temperature value and calibration temperature value
Compensation depth value DisTemp, according to formula: DisTemp=TempFeat* Δ Temp, Δ Temp=NowTemp-CaliTemp,
Wherein, TempFeat is the temperature of phase type TOF sensor and the coefficient of relationship of temperature-compensating depth value, connection calibration temperature
It obtains module and Current Temperatures obtains module；Actual depth value obtains module, for obtaining compensated actual depth value
Distance, according to formula: Distance=NowDistance-DisTemp obtain, connection depth value obtain module and
Depth compensation value obtains module.
Preferably, calibration temperature acquisition module includes: temperature sensor setting unit, is used to sense in phase type TOF
Temperature sensor is respectively set in four setting positions of the pixel of device；Temperature acquiring unit is demarcated, is used for four temperature
It spends the temperature value that sensor obtains and carries out the resulting average value of average calculating operation as calibration temperature value.
Preferably, depth value obtain module also to: control phase type TOF sensor pixel unit transfer tube and hair
The phase relation for penetrating modulation laser, acquires four phases: 0 °, 90 °, 180 °, 270 ° of photogenerated charge be respectively PHS1, PHS3,
PHS2,PHS4；Phase is converted to by the obtained quantity of electric charge again, is currently surveyed by the Relation acquisition of phase, laser frequency and the light velocity
The depth value NowDistance measured, according to formula:WhereinIt can be obtained NowDistance.
Preferably, the pixel unit of phase type TOF sensor includes: substrate；Photodiode is set in substrate,
It is to the stored charge in response to incident reflected light on the photodiode；First voltage signal output module, is used for
It in the charge conversion of photodiode is voltage signal by accumulation comprising first switch, the control terminal of first switch receive control
Signal processed, the input terminal of first switch connect photodiode, and the output end of first switch is received in the control terminal of first switch
To output first voltage signal when controlling signal；And second voltage signal output module, it is used to accumulate in two pole of photoelectricity
The charge conversion of pipe is voltage signal comprising second switch, the control terminal of second switch receive control signal, second switch
Input terminal connects photodiode, and the output end of second switch exports the when the control terminal of second switch receives control signal
Two voltage signals；Wherein, setting be sent to first switch control signal it is identical as the phase of modulation light, be arranged be sent to second
The phase complements of the control signal of switch and the control signal for being sent to first switch, transmitting modulation light to object under test, pixel
Unit receive object under test receive modulation light back reflection return reflected light after, obtain first voltage signaling module output
Voltage is the first voltage signal PS0 of first voltage signal output module output of the reflected light when phase is 0 °, obtains second
The voltage signal of voltage signal module output is that second voltage signal output module of the reflected light when phase is 180 ° exports
Second voltage signal PS1；The voltage for obtaining the output of first voltage signaling module is first voltage of the reflected light when phase is 90 °
The first voltage signal PS2 of signal output module output, the voltage for obtaining the output of second voltage signaling module is the anti-of modulation light
Penetrate the second voltage signal PS3 of second voltage signal output module output of the light when phase is 270 °.
Preferably, photodiode is set to the center of substrate, the first switch of first voltage signal output module
For the first transmission transistor, the first transmission transistor is set in substrate and is set to the side of photodiode, and first passes
Defeated transistor and photodiode-couple are exported with the charge for accumulating photodiode as voltage signal, and second voltage signal is defeated
The second switch of module is the second transmission transistor out, and the second transmission transistor is set in substrate and symmetrical first transmission is brilliant
Body pipe is set to the other side of photodiode, and the second transmission transistor and photodiode-couple are to accumulate photodiode
Charge output be voltage signal；First voltage signal output module further include: the first floating diffusion region is set in substrate
And it is set to side of first transmission transistor far from photodiode, wherein the first transmission transistor is by photodiode
The electric charge transfer of accumulation is saved to the first floating diffusion region；First reset transistor is set in substrate and couples photoelectricity
Diode, the charge to save the first floating diffusion region reset；First source following transistor, control terminal connection
First floating diffusion region, input terminal connect the first reset transistor；And first gating transistor, input terminal connection first
The output end of source following transistor, the output end output voltage signal of the first gating transistor；Second voltage signal exports mould
Block further include: the second floating diffusion region is set in substrate and is set to the second transmission transistor far from photodiode
Side, wherein the second transmission transistor by the second voltage signal of photodiode be transferred to the second floating diffusion region carry out
It saves；Second reset transistor, is set on substrate and couples photodiode, to the electricity for saving the second floating diffusion region
Lotus is resetted；Second source following transistor, control terminal connect the second floating diffusion region, and input terminal connection second resets
Transistor；And second gating transistor, input terminal connect the output end of the second source following transistor, the second gating crystal
The output end output voltage signal of pipe.
The beneficial effects of the present application are as follows: the application passes through temperature when acquisition is demarcated and according to calibration temperature when demarcating
Value and the temperature characterisitic of imaging sensor acquire temperature-compensating depth value, and the image depth values currently got are combined
Temperature-compensating depth value can be obtained actual depth value, the introducing compensated in this way by the temperature correction of phase type TOF sensor, energy
The fluctuation for effectively inhibiting depth value caused by temperature change, makes sensor export stable depth map and allows without the waiting time
The temperature of sensor settles out, and improves the efficiency of sensor, provides safeguard for subsequent output high accuracy depth figure.
Detailed description of the invention
Fig. 1 is the relation schematic diagram between the electron mobility of the prior art and temperature；
Fig. 2 is the flow chart for the temperature-compensation method that the application is applied to phase type TOF sensor；
Fig. 3 is the schematic diagram of the pixel unit setting temperature sensor of the application phase type TOF sensor；
Fig. 4 is the structural schematic diagram of the pixel unit of the application phase type TOF sensor；
Fig. 5 is the equivalent circuit schematic of Fig. 4；
Fig. 6 is the temperature characteristics figure of the application phase type TOF sensor；
Fig. 7 is the schematic diagram for the temperature compensation means that the application is applied to phase type TOF sensor.
Description of symbols: 203 photodiode PD first voltage signal output module of substrate, 201 first transmission transistor
The first floating diffusion region TG1 FD1 the first reset transistor RST1 the first source following transistor the first gating transistor of SF1 SEL1
202 second the second floating diffusion region transmission transistor TG2 the second reset transistor of FD2 RST2 of second voltage signal output module
Two the second gating transistor of source following transistor SF2 SEL2.
Specific embodiment
The application is described in further detail below by specific embodiment combination attached drawing.
Please refer to Fig. 1 to Fig. 7, a kind of temperature-compensation method applied to phase type TOF sensor, temperature-compensation method packet
It includes:
Step S101: calibration temperature value when phase type TOF sensor is demarcated is obtained by temperature sensor
CaliTemp。
It in step s101 include: that temperature sensing is respectively set in four positions of the pixel of phase type TOF sensor
Device；The temperature value that four temperature sensors obtain is subjected to the resulting average value of average calculating operation as calibration temperature value.
In the present embodiment, referring to Fig. 3, four positions of the pixel of phase type TOF sensor are phase type TOF biography
Four angles of sensor.The pixel array that phase type TOF sensor is 320 × 240.
Step S102: the current temperature value NowTemp of phase type TOF sensor when carrying out depth value measurement is obtained.This
In embodiment, the temperature of phase type TOF sensor can be obtained by temperature sensor.
Step S103: acquisition currently measures obtained current depth value NowDistance.
Include: in step s 103
Step S1031: the transfer tube of the pixel unit of control phase type TOF sensor and the phase of transmitting modulation laser are closed
System, acquires four phases: 0 °, 90 °, 180 °, 270 ° of photogenerated charge be respectively PHS1, PHS3, PHS2, PHS4.
Step S1032: being converted to phase by the obtained quantity of electric charge again, is obtained by the relationship of phase, laser frequency and the light velocity
The current depth value NowDistance for currently measuring and obtaining is taken, according to formula:WhereinIt can be obtained NowDistance.
It include: the pixel unit that phase type TOF sensor is set in step S1031.
Fig. 4 and Fig. 5 are please referred to, pixel unit includes: substrate 203, photodiode PD, first voltage signal output module
201 and second voltage signal output module 202.
Substrate 203 is used to form device architecture or chip circuit, and substrate 203 can be semiconductor base, semiconductor base
Including silicon substrate, silicon-Germanium substrate, silicon carbide substrates, silicon-on-insulator (SOI) substrate, germanium on insulator (GOI) substrate, glass lined
Bottom or III-V compound substrate (such as silicon nitride or GaAs etc.).Substrate 203 or body substrate, i.e. silicon substrate, silicon
Germanium substrate or silicon carbide substrates.In other embodiments, substrate 203 can also serve as a contrast for silicon-on-insulator substrate or germanium on insulator
Bottom.In other embodiments, substrate 203 can also include semiconductor base and be formed in semiconductor base by epitaxy technique
The epitaxial layer on surface.In the present embodiment, substrate 203 includes: p-type single crystalline silicon substrate (p-type substrate) (not shown)
And p-type epitaxial layer (p-epitaxial layer).
Photodiode PD is set in substrate 203, and photodiode PD is formed by ion implantation technology, moreover, logical
The energy and concentration for crossing control ion implanting can control the depth and injection range of ion implanting, to control two pole of photoelectricity
The depth and thickness of pipe PD.In the present embodiment, photodiode PD be clamper photodiode (Pinned Photodiode,
PPD).Doped with N-type ion in photodiode PD, N-type ion includes phosphonium ion, arsenic ion or antimony ion.In addition, photoelectricity two
Pole pipe PD relative to conventional photodiode surface layer more than a thin layer of P+ layer, by top P+ layers by charge collection layer
N buried layer is kept apart with Si/SiO2 top surface, masks the trap for causing dark current main cause, so that two pole of clamper photoelectricity
The relatively traditional photodiode of pipe one side has smaller dark current, is on the other hand capable of forming complete depletion of accumulation
Area overcomes the problem of exporting picture lag.
Referring to Fig. 5, first voltage signal output module 201 includes: the first transmission transistor TG1, the first floating diffusion
Area FD1, the first reset transistor RST1, the first source following transistor SF1 and the first gating transistor SEL1.
First transmission transistor TG1, is set in substrate 203 and is set to the side of photodiode PD, and first
Transmission transistor TG1 is coupled with photodiode PD and is exported with the charge for accumulating photodiode PD as voltage signal；First
Floating diffusion region FD1 is set in substrate 203 and is set to the first transmission transistor TG1 far from photodiode PD's
Side, wherein the electric charge transfer that the first transmission transistor TG1 accumulates photodiode PD to the first floating diffusion region FD1 into
Row saves；First reset transistor RST1 is set in substrate 203 and couples photodiode PD, expands first to float
The charge that area FD1 is saved is dissipated to be resetted；First source following transistor SF1, control terminal connect the first floating diffusion region
FD1, input terminal connect the first reset transistor RST1；And the first gating transistor SEL1, input terminal connect the first source
Pole follows the output end of transistor SF1, the output end output voltage signal of the first gating transistor SEL1.
In the present embodiment, the first transmission transistor TG1, the first reset transistor RST1, the first source following transistor SF1
And first gating transistor SEL1 be metal-oxide-semiconductor.
Second voltage signal output module 202 includes: the second transmission transistor TG2, the second floating diffusion region FD2, second
Reset transistor RST2, the second source following transistor SF2 and the second gating transistor SEL2.
Second transmission transistor TG2 is set in substrate 203 and symmetrical first transmission transistor TG1 is set to photoelectricity two
The other side of pole pipe PD, the charge that the second transmission transistor TG2 is coupled with photodiode PD to accumulate photodiode PD
Output is voltage signal；Second floating diffusion region FD2 is set in substrate 203 and is set to the second transmission transistor TG2
Side far from photodiode PD, wherein the second transmission transistor TG2 shifts the second voltage signal of photodiode PD
It is saved to the second floating diffusion region FD2；Second reset transistor RST2 is set to coupling two pole of photoelectricity on substrate 203
Pipe PD, the charge to save the second floating diffusion region FD2 reset；Second source following transistor SF2, control terminal
The second floating diffusion region FD2 is connected, input terminal connects the second reset transistor RST2；Second gating transistor SEL2, it is defeated
Enter the output end of the second source following transistor SF2 of end connection, the output end output voltage signal of the second gating transistor SEL2.
In the present embodiment, the second transmission transistor TG2, the second reset transistor RST2, the second source following transistor SF2
And second gating transistor SEL2 be metal-oxide-semiconductor.
First transmission transistor TG1 is set to the side of photodiode PD, and the first floating diffusion region FD1, first reset
Transistor RST1, the first source following transistor SF1 and the first gating transistor SEL1 are set to the first transmission transistor TG1
Side far from photodiode PD, the symmetrical first transmission transistor TG1 of the second transmission transistor TG2 are set to photodiode
The other side of PD, the second floating diffusion region FD2, the second reset transistor RST2, the second source following transistor SF2 and second
The symmetrical first floating diffusion region FD1 of gating transistor SEL2 is set to the second transmission transistor TG2 far from photodiode PD's
Side.
Further, pixel unit further includes deep trench isolation structure, is used to be isolated the active of adjacent pixel unit
Region is set in substrate 203 around the periphery of pixel unit.Specifically, deep trench isolation structure is formed in p-type extension
In layer, wherein a deep trench isolation structure is formed in the second side of the N-type ion area far from N-type buried layer, another deep trench every
The 4th side of the N-type ion area 304 far from N-type buried layer is formed in from structure.Deep trench isolation structure (DTI) is within the pixel
Effect is the active area being isolated between pixel, the generation and reduction that can inhibit the photon injected from adjacent pixel and inhibit dark current
Crosstalk between pixel.
Further, pixel unit further includes barn door, be used to stopping light be irradiated in addition to photodiode PD with
On outer region and electrical interference is shielded, is set to first voltage signal output module 201 and the output of second voltage signal
The upper surface of module 202.In the present embodiment, because in pixel unit including clamper photodiode PD and several active circuits,
Part of the clamper photodiode PD as reception light irradiation acquisition optical information, but other active circuits such as first voltage
Signal output module 201 and second voltage signal output module 202 do not need the irradiation of light, if other active circuit illumination
The change of active transistor performance parameters can also be caused, so that cause circuit malfunction.Therefore, the present invention completes all on domain
After technique, one layer of barn door is covered in all active transistor regions.It not only plays the role of masking and reflection to light, and
And there is shielding after the grounding and prevent electrical interference.The material of barn door in the present embodiment is metal.
Further, pixel unit further includes lenticule, is used to for light-ray condensing to be irradiated to the photosensitive of photodiode
On region, it is set to the upper surface of pixel unit.In the present embodiment, in order to further increase fill factor FF, (photosensitive area is cut
The ratio of area and elemental area), using the focusing light effect of lenticule, the light that periphery is blocked is gathered in photodiode PD
Photosensitive region on.
Step S104: the temperature according to the difference and phase type TOF sensor of current temperature value and calibration temperature value is special
Linearity curve obtains temperature-compensating depth value DisTemp,
According to formula: DisTemp=TempFeat* Δ Temp, Δ Temp=NowTemp-CaliTemp, wherein
TempFeat is the temperature of phase type TOF sensor and the coefficient of relationship of temperature-compensating depth value.
Referring to Fig. 6, Fig. 6 is the temperature characteristics of phase type TOF sensor.Temperature is with depth in practical 1m
Measurement result as shown in the temperature characteristics of Fig. 6.The depth compensation value can be found according to the temperature characteristics
The corresponding temperature-compensating depth value DisTemp of DisTemp.
The temperature for testing measurement is as shown in Figure 6 with measurement result of the depth in practical 1m.After fitting, phase type
The temperature of TOF sensor and the coefficient of relationship of temperature-compensating depth value: TempFeat=0.125.
Step S105: compensated actual depth value Distance is obtained, according to formula: Distance=
NowDistance-DisTemp can be obtained.
The working principle of the present embodiment is illustrated below with reference to Fig. 1 to Fig. 7.
Firstly, the temperature when temperature sensor measurement by four positions that phase type TOF sensor is arranged in is demarcated
Angle value, the temperature value that the temperature sensor measurement of this four positions is obtained carry out average calculating operation, and the value obtained after average is mark
Determine temperature value CaliTemp.
It is then possible to which the current temperature value NowTemp of phase type TOF sensor is obtained by temperature sensor again.
Then, depth value NowDistance is obtained by phase type TOF sensor.Detailed process is as follows: first by beating
The first transmission transistor TG1, the first reset transistor RST1, the second transmission transistor TG2 and the second reset transistor RST2 are opened,
First floating diffusion region FD1, the second floating diffusion region FD2 and clamper photodiode PD are resetted, clamper of releasing light
Residual charge in electric diode PD makes it meet complete depletion of condition, and is incident on photoelectricity two without modulated optical signal
When on pole pipe PD, photogenerated charge is not generated.
It is then turned off the first transmission transistor TG1, the first reset transistor RST1, the second transmission transistor TG2 and second
Reset transistor RST2, clamper photodiode PD start stored charge.The control for being sent to the first transmission transistor TG1 is set
Signal is identical as the phase of modulation light, and setting is sent to the control signal of the second transmission transistor TG2 and is sent to the first transmission
The phase complements of the control signal of transistor TG1.Emit modulation light, by the pulse signal of modulation light and is applied to the first transmission
The phase relation of the control signal of transistor TG1 and the second transmission transistor TG2 is opened the first transmission transistor TG1 and second and is passed
Defeated transistor TG2 will build up electric charge transfer in photodiode PD to the first floating diffusion region FD1 and the second floating diffusion
Area FD2, and it is brilliant after the first transmission transistor TG1 and the second transmission transistor TG2 is closed, then by opening the first gating of gating
Body pipe SEL1 and the first gating transistor SEL1 read-out voltage value.
It is measured using two taps, four phase method, needs to be integrated twice, specifically, the first integral stage, pixel
The photodiode PD of unit receive object under test receive modulation light back reflection return reflected light after, obtain first voltage
The voltage that signal output module 201 exports is that first voltage signal output module 201 of the reflected light when phase is 0 ° exports
First voltage signal PS0, it in phase is 180 ° that obtain the voltage signal that second voltage signal output module 202 exports, which be reflected light,
When second voltage signal output module output second voltage signal PS1；Second integral stage, pixel unit receive again
After reflected light, obtaining the voltage that first voltage signal output module 201 exports is first voltage of the reflected light when phase is 90 °
Signal PS2, obtaining the voltage that second voltage signal output module 202 exports is the reflected light of modulation light when phase is 270 °
Second voltage signal PS3.
According to formula:WhereinIt can obtain
Currently measure obtained depth value NowDistance, wherein c is the light velocity, and f is laser frequency.
The temperature characteristics of fixed phase formula TOF sensor, according to current temperature value and calibration temperature value difference come
Obtain temperature-compensating depth value DisTemp.Specifically, according to formula: DisTemp=TempFeat* Δ Temp, Δ Temp=
NowTemp-CaliTemp, wherein TempFeat is the temperature of phase type TOF sensor and the coefficient of relationship of depth value.
Finally, can be obtained compensated actual depth according to formula Distance=NowDistance-DisTemp
Value.
Correspondingly, the function modoularization thinking according to computer software, referring to Fig. 7, the application one kind is applied to phase
The temperature compensation means of formula TOF sensor, temperature compensation means include:
Temperature acquisition module 61 is demarcated, when being used to be demarcated by temperature sensor acquisition phase type TOF sensor
Calibration temperature value CaliTemp.
Demarcating temperature acquisition module 61 includes:
Temperature sensor setting unit is used for four setting positions in the pixel of phase type TOF sensor and distinguishes
Temperature sensor is set；
Temperature acquiring unit is demarcated, the temperature value for being used to obtain four temperature sensors carries out obtained by average calculating operation
Average value as calibration temperature value.
Current Temperatures obtain module 62, are used to obtain the current of phase type TOF sensor when carrying out depth value measurement
Temperature value NowTemp.
Depth value obtains module 63, is used to obtain the current depth value NowDistance for currently measuring and obtaining.
Depth value obtain module 63 also to:
Control the transfer tube of the pixel unit of phase type TOF sensor and the phase relation of transmitting modulation laser, acquisition four
A phase: 0 °, 90 °, 180 °, 270 ° of photogenerated charge be respectively PHS1, PHS3, PHS2, PHS4；
Phase is converted to by the obtained quantity of electric charge again, is currently measured by the Relation acquisition of phase, laser frequency and the light velocity
Obtained current depth value NowDistance, according to formula:WhereinIt can be obtained NowDistance.
Depth compensation value obtains module 64, is used for difference and the phase according to current temperature value and calibration temperature value
The temperature characteristics of position formula TOF sensor obtains temperature-compensating depth value DisTemp, according to formula: DisTemp=
TempFeat* Δ Temp, Δ Temp=NowTemp-CaliTemp, wherein TempFeat is the temperature of phase type TOF sensor
With the coefficient of relationship of temperature-compensating depth value, connection calibration temperature acquisition module 61 and Current Temperatures obtain module 62.
Actual depth value obtains module 65, for obtaining compensated actual depth value Distance, according to formula:
Distance=NowDistance-DisTemp is obtained, and connection depth value obtains module 63 and depth compensation
Value obtains module 64.
The pixel unit of phase type TOF sensor applies the pixel unit in example and please refers to pixel unit described above,
It is not further described.
The beneficial effects of the present application are as follows: the application passes through temperature when acquisition is demarcated and according to calibration temperature when demarcating
Value and the temperature characterisitic of imaging sensor acquire temperature-compensating depth value, and the image depth values currently got are combined
Temperature-compensating depth value can be obtained actual depth value, the introducing compensated in this way by the temperature correction of phase type TOF sensor, energy
The fluctuation for effectively inhibiting depth value caused by temperature change, makes sensor export stable depth map and allows without the waiting time
The temperature of sensor settles out, and improves the efficiency of sensor, provides safeguard for subsequent output high accuracy depth figure.
It will be understood by those skilled in the art that all or part of the steps of various methods can pass through in above embodiment
Program instructs related hardware to complete, which can be stored in a computer readable storage medium, storage medium can wrap
It includes: read-only memory, random access memory, disk or CD etc..
The foregoing is a further detailed description of the present application in conjunction with specific implementation manners, and it cannot be said that this Shen
Specific implementation please is only limited to these instructions.For those of ordinary skill in the art to which this application belongs, it is not taking off
Under the premise of from the present application design, a number of simple deductions or replacements can also be made.
Claims (10)
1. a kind of temperature-compensation method applied to phase type TOF sensor, which is characterized in that the temperature-compensation method packet
It includes:
The calibration temperature value CaliTemp when phase type TOF sensor is demarcated is obtained by temperature sensor；
Obtain the current temperature value NowTemp of phase type TOF sensor when carrying out depth value measurement；
Acquisition currently measures obtained current depth value NowDistance；
Temperature-compensating depth value DisTemp is obtained according to the difference of the current temperature value and calibration temperature value, according to formula:
DisTemp=TempFeat* Δ Temp, Δ Temp=NowTemp-CaliTemp, wherein TempFeat is the phase type
The temperature of TOF sensor and the coefficient of relationship of temperature-compensating depth value；
Compensated actual depth value Distance is obtained, according to formula:
Distance=NowDistance-DisTemp can be obtained.
2. temperature-compensation method as described in claim 1, which is characterized in that obtain phase type by temperature sensor described
Include: in the step of calibration temperature value CaliTemp when TOF sensor is demarcated
Temperature sensor is respectively set in four positions of the pixel of the phase type TOF sensor；
The temperature value that four temperature sensors obtain is subjected to the resulting average value of average calculating operation as the calibration temperature value.
3. temperature-compensation method as described in claim 1, which is characterized in that currently measure obtained depth value in the acquisition
Include: in the step of NowDistance
Control the transfer tube of the pixel unit of the phase type TOF sensor and the phase relation of transmitting modulation laser, acquisition four
A phase: 0 °, 90 °, 180 °, 270 ° of photogenerated charge be respectively PHS1, PHS3, PHS2, PHS4；
Phase is converted to by the obtained quantity of electric charge again, is currently measured and is obtained by the Relation acquisition of phase, laser frequency and the light velocity
Depth value NowDistance, according to formula:WhereinIt can be obtained NowDistance.
4. temperature-compensation method as described in claim 1, which is characterized in that currently measure obtained depth value in the acquisition
In the step of NowDistance further include:
The pixel unit of the phase type TOF sensor is set, and the pixel unit includes:
Substrate；
Photodiode is set in the substrate, in response to incident reflected light on the photodiode
And stored charge；
First voltage signal output module, be used to accumulate the photodiode charge conversion be voltage signal,
Including first switch, the control terminal of the first switch receives control signal, and the input terminal of the first switch connects the light
Electric diode, the output end of the first switch export when the control terminal of the first switch receives the control signal
One voltage signal；And
Second voltage signal output module, be used to accumulate the photodiode charge conversion be voltage signal,
Including second switch, the control terminal of the second switch receives control signal, and the input terminal of the second switch connects the light
Electric diode, the output end of the second switch export when the control terminal of the second switch receives the control signal
Two voltage signals；
Wherein, setting be sent to the first switch control signal it is identical as the phase of modulation light, be arranged and be sent to described the
The control signals of two switches and the phase complements for controlling signal for being sent to the first switch, emit the modulation light to be measured
Object, the pixel unit receive object under test receive the modulation light back reflection return reflected light after, described in acquisition
The voltage of first voltage signaling module output is the first voltage signal output module of the reflected light when phase is 0 °
The first voltage signal PS0 of output, the voltage signal for obtaining the second voltage signaling module output are the reflected light in phase
The second voltage signal PS1 of second voltage signal output module output when position is 180 °；
The voltage for obtaining the first voltage signaling module output is the first voltage of the reflected light when phase is 90 °
The first voltage signal PS2 of signal output module output, the voltage for obtaining the second voltage signaling module output is the tune
The second voltage signal PS3 of second voltage signal output module output of the reflected light of light processed when phase is 270 °.
5. temperature-compensation method as claimed in claim 4, which is characterized in that in the setting phase type TOF sensor
Pixel unit the step of in, further includes:
The photodiode is set to the center of the substrate, the first switch of the first voltage signal output module
For the first transmission transistor, the first transmission transistor is set in the substrate and is set to the one of the photodiode
Side, the first transmission transistor and the photodiode-couple are electric with the charge output for accumulating the photodiode
Signal is pressed, the second switch of the second voltage signal output module is the second transmission transistor, second transmission transistor
It is set in the substrate and symmetrical first transmission transistor is set to the other side of the photodiode, second passes
Defeated transistor and the photodiode-couple are exported with the charge for accumulating the photodiode as voltage signal；
The first voltage signal output module further include:
First floating diffusion region is set in the substrate and is set to first transmission transistor far from the photoelectricity
The side of diode, wherein the electric charge transfer that first transmission transistor accumulates the photodiode to described first
Floating diffusion region is saved；
First reset transistor is set to the coupling photodiode in the substrate, expands described first to float
The charge that area saves is dissipated to be resetted；
First source following transistor, control terminal connect first floating diffusion region, and input terminal connection described first is multiple
Bit transistor；And
First gating transistor, input terminal connect the output end of first source following transistor, and first gating is brilliant
The output end of body pipe exports the voltage signal；
The second voltage signal output module further include:
Second floating diffusion region is set in the substrate and is set to second transmission transistor far from the photoelectricity
The side of diode, wherein the second voltage signal of the photodiode is transferred to described by second transmission transistor
Second floating diffusion region is saved；
Second reset transistor is set on the substrate and couples the photodiode, expands described second to float
The charge that area saves is dissipated to be resetted；
Second source following transistor, control terminal connect second floating diffusion region, and input terminal connection described second is multiple
Bit transistor；And
Second gating transistor, input terminal connect the output end of second source following transistor, and second gating is brilliant
The output end of body pipe exports the voltage signal.
6. a kind of temperature compensation means applied to phase type TOF sensor, which is characterized in that the temperature compensation means packet
It includes:
Temperature acquisition module is demarcated, is used to obtain by temperature sensor when the phase type TOF sensor is demarcated
Demarcate temperature value CaliTemp；
Current Temperatures obtain module, are used to obtain the current temperature of phase type TOF sensor when carrying out depth value measurement
Angle value NowTemp；
Depth value obtains module, is used to obtain the current depth value NowDistance for currently measuring and obtaining；
Depth compensation value obtains module, is used to obtain temperature-compensating according to the difference of the current temperature value and calibration temperature value
Depth value DisTemp, according to formula: DisTemp=TempFeat* Δ Temp, Δ Temp=NowTemp-CaliTemp,
In, TempFeat is the temperature of the phase type TOF sensor and the coefficient of relationship of temperature-compensating depth value, connects the mark
Determine temperature acquisition module and Current Temperatures obtain module；
Actual depth value obtains module, for obtaining compensated actual depth value Distance, according to formula:
Distance=NowDistance-DisTemp is obtained, and is connected the depth value and is obtained module and depth compensation value
Obtain module.
7. temperature compensation means as claimed in claim 6, which is characterized in that the calibration temperature acquisition module includes:
Temperature sensor setting unit is used for four setting positions in the pixel of the phase type TOF sensor and distinguishes
Temperature sensor is set；
Temperature acquiring unit is demarcated, it is resulting flat that the temperature value for being used to obtain four temperature sensors carries out average calculating operation
Mean value is as the calibration temperature value.
8. temperature compensation means as claimed in claim 6, which is characterized in that the depth value obtain module also to:
Control the transfer tube of the pixel unit of the phase type TOF sensor and the phase relation of transmitting modulation laser, acquisition four
A phase: 0 °, 90 °, 180 °, 270 ° of photogenerated charge be respectively PHS1, PHS3, PHS2, PHS4；
Phase is converted to by the obtained quantity of electric charge again, is currently measured and is obtained by the Relation acquisition of phase, laser frequency and the light velocity
Depth value NowDistance, according to formula:WhereinIt can be obtained NowDistance.
9. temperature compensation means as claimed in claim 6, which is characterized in that the pixel unit of the phase type TOF sensor
Include:
Substrate；
Photodiode is set in the substrate, in response to incident reflected light on the photodiode
And stored charge；
First voltage signal output module, be used to accumulate the photodiode charge conversion be voltage signal,
Including first switch, the control terminal of the first switch receives control signal, and the input terminal of the first switch connects the light
Electric diode, the output end of the first switch export when the control terminal of the first switch receives the control signal
One voltage signal；And
Second voltage signal output module, be used to accumulate the photodiode charge conversion be voltage signal,
Including second switch, the control terminal of the second switch receives control signal, and the input terminal of the second switch connects the light
Electric diode, the output end of the second switch export when the control terminal of the second switch receives the control signal
Two voltage signals；
Wherein, setting be sent to the first switch control signal it is identical as the phase of modulation light, be arranged and be sent to described the
The control signals of two switches and the phase complements for controlling signal for being sent to the first switch, emit the modulation light to be measured
Object, the pixel unit receive object under test receive the modulation light back reflection return reflected light after, described in acquisition
The voltage of first voltage signaling module output is the first voltage signal output module of the reflected light when phase is 0 °
The first voltage signal PS0 of output, the voltage signal for obtaining the second voltage signaling module output are the reflected light in phase
The second voltage signal PS1 of second voltage signal output module output when position is 180 °；
The voltage for obtaining the first voltage signaling module output is the first voltage of the reflected light when phase is 90 °
The first voltage signal PS2 of signal output module output, the voltage for obtaining the second voltage signaling module output is the tune
The second voltage signal PS3 of second voltage signal output module output of the reflected light of light processed when phase is 270 °.
10. temperature compensation means as claimed in claim 9, which is characterized in that the photodiode is set to the substrate
Center, the first switch of the first voltage signal output module is the first transmission transistor, the first transmission transistor
It is set in the substrate and is set to the side of the photodiode, the first transmission transistor and the photodiode
Coupling is exported with the charge for accumulating the photodiode as voltage signal, the second voltage signal output module
Second switch is the second transmission transistor, and second transmission transistor is set in the substrate and symmetrical described first passes
Defeated transistor is set to the other side of the photodiode, and the second transmission transistor and the photodiode-couple are with by institute
The charge output for stating photodiode accumulation is voltage signal；
The first voltage signal output module further include:
First floating diffusion region is set in the substrate and is set to first transmission transistor far from the photoelectricity
The side of diode, wherein the electric charge transfer that first transmission transistor accumulates the photodiode to described first
Floating diffusion region is saved；
First reset transistor is set to the coupling photodiode in the substrate, expands described first to float
The charge that area saves is dissipated to be resetted；
First source following transistor, control terminal connect first floating diffusion region, and input terminal connection described first is multiple
Bit transistor；And
First gating transistor, input terminal connect the output end of first source following transistor, and first gating is brilliant
The output end of body pipe exports the voltage signal；
The second voltage signal output module further include:
Second floating diffusion region is set in the substrate and is set to second transmission transistor far from the photoelectricity
The side of diode, wherein the second voltage signal of the photodiode is transferred to described by second transmission transistor
Second floating diffusion region is saved；
Second reset transistor is set on the substrate and couples the photodiode, expands described second to float
The charge that area saves is dissipated to be resetted；
Second source following transistor, control terminal connect second floating diffusion region, and input terminal connection described second is multiple
Bit transistor；And
Second gating transistor, input terminal connect the output end of second source following transistor, and second gating is brilliant
The output end of body pipe exports the voltage signal.
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